JP2003332078A - Solid planar light source - Google Patents
Solid planar light sourceInfo
- Publication number
- JP2003332078A JP2003332078A JP2002141396A JP2002141396A JP2003332078A JP 2003332078 A JP2003332078 A JP 2003332078A JP 2002141396 A JP2002141396 A JP 2002141396A JP 2002141396 A JP2002141396 A JP 2002141396A JP 2003332078 A JP2003332078 A JP 2003332078A
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- JP
- Japan
- Prior art keywords
- light emitting
- emitting layer
- light source
- layer
- planar
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Abstract
Description
【０００１】[0001]
【発明の属する技術分野】 本発明は、無機系の固体面
状光源に関する。TECHNICAL FIELD The present invention relates to an inorganic solid-state planar light source.
【０００２】[0002]
【従来の技術】 ＥＬ（エレクトロルミネセンス）など
の固体面状光源は、ＬＣＤ（液晶デイスプレイ）、ＬＥ
Ｄ（発光ダイオード）やＰＤＰ（プラズマディスプレイ
パネル）などに比べ最も薄形、軽量化がはかれるととも
にその表示面積が比較的大きく、良質な画像を得るのに
必要な輝度、コントラスト、視野、ちらつきなどの特性
が総合的に優れていて、将来有望な表示素子（装置）と
して期待されている。2. Description of the Related Art Solid-state planar light sources such as EL (electroluminescence) are LCD (liquid crystal display), LE
Compared to D (Light Emitting Diode) and PDP (Plasma Display Panel), it is the thinnest and lightest, and its display area is comparatively large, so that the brightness, contrast, field of view, and flicker necessary for obtaining good quality images The characteristics are comprehensively excellent and expected as a promising display element (device) in the future.
【０００３】このＥＬの構造は、基板の上に順次、Ｉｎ
2 Ｏ3 などの導電性物質からなる透明電極、誘電体層、
ＺｎＳ：Ｃｕなどの蛍光体からなる発光層、ＢａＴｉＯ
3 などからなる誘電体層、Ａｌ箔などの導電性物質から
なる背面電極などが蒸着、スパッタリング、スクリーン
印刷や貼付などにより積層されている。The structure of this EL is such that In
Transparent electrode, dielectric layer, made of conductive material such as 2 O 3
A light emitting layer made of a phosphor such as ZnS: Cu, BaTiO 3.
A dielectric layer made of 3 or the like, a back electrode made of a conductive material such as Al foil, and the like are laminated by vapor deposition, sputtering, screen printing, sticking, or the like.
【０００４】そして、発光は電極間に交流電圧を印加す
ると発光層内にわずかに存在する自由電子が高電界で加
速され、発光中心に励起し、発光させるほか自由電子も
増加させる。電界がなくなると移動できる端に溜った自
由電子は反対方向に移動して、再結合により発光する。When an AC voltage is applied between the electrodes, free electrons slightly existing in the light emitting layer are accelerated by a high electric field to be excited to the emission center to emit light, and also increase free electrons. When the electric field disappears, the free electrons accumulated at the movable end move in the opposite direction and emit light by recombination.
【０００５】[0005]
【発明が解決しようとする課題】 このようなＥＬによ
ると、上記印加電圧が高いほど発光輝度が増大するが飽
和し、印加交流電圧の周波数も高くすると発光輝度が増
大するが、やはり飽和する傾向にある。According to such an EL, the higher the applied voltage is, the higher the emission brightness is, but the saturation is, and the higher the frequency of the applied AC voltage is, the higher the emission brightness is. However, the tendency is also saturated. It is in.
【０００６】また、上記輝度と寿命とは相反する関係に
あり、高輝度、長寿命化のために発光層を形成する蛍光
体について材料、最適粒径化、付活剤やバインダなどの
研究が行われているが、なかなかよいものが得られてい
ないのが現状である。[0006] Further, the above-mentioned brightness and life are in a contradictory relationship, and research on materials, optimum particle size, activators, binders, etc. for phosphors forming a light emitting layer for high brightness and long life has been conducted. Although it is being done, the current situation is that nothing good has been obtained.
【０００７】なお、現在のＢａＴｉＯ3 やＹ2 Ｏ3 など
で厚膜の誘電体層を形成したＥＬは、製造コストが比較
的安価であるとともに大面積化が可能で、寿命も予測値
のものが得られている。しかし、発光効率がＰＤＰと同
程度の１〜３Ｌｍ／Ｗ程度で低すぎるという問題があ
る。また、特に輝度を高くすると効率が低下する不具合
がある。An EL having a thick dielectric layer formed of BaTiO 3 , Y 2 O 3 or the like at present has a relatively low manufacturing cost, a large area, and a life expectancy. Has been obtained. However, there is a problem that the luminous efficiency is about 1 to 3 Lm / W, which is the same level as PDP, and is too low. Further, there is a problem that the efficiency is lowered particularly when the brightness is increased.
【０００８】そこで、本発明は、輝度および寿命を向上
させることのできる固体面状光源を提供することを目的
とする。[0008] Therefore, an object of the present invention is to provide a solid surface light source capable of improving the brightness and the life.
【０００９】[0009]
【課題を解決するための手段】 本発明の請求項１に記
載の固体面状光源は、導電性物質を有する面状電極と、
この面状電極上に積層された強誘電体層と、この強誘電
体層上に積層された発光層と、この発光層上に積層され
た透明導電性物質を有してなる透明面状電極とを備えて
いることを特徴とする。A solid-state planar light source according to claim 1 of the present invention includes a planar electrode having a conductive substance,
A transparent planar electrode including a ferroelectric layer laminated on the planar electrode, a light emitting layer laminated on the ferroelectric layer, and a transparent conductive substance laminated on the light emitting layer. It is characterized by having and.
【００１０】そのメカニズムは十分に知られていない
が、強誘電体層は表面に残留分極をもち、この電荷が交
流電圧印加時に外部電圧に重畳されるように加わり、発
光層への相対的印加電圧が高くなるためか、あるいは、
強誘電体層の表面が残留電荷の影響により高電界となっ
て、発光層へ直接に電荷を送り込み発光に寄与するなど
のことが推察される。Although the mechanism is not sufficiently known, the ferroelectric layer has remanent polarization on the surface, and this charge is added so as to be superposed on an external voltage when an AC voltage is applied, and the relative application to the light emitting layer. Because the voltage is high, or
It is presumed that the surface of the ferroelectric layer becomes a high electric field due to the influence of the residual charges, and the charges are directly sent to the light emitting layer to contribute to the light emission.
【００１１】本発明の強誘電体層を形成する強誘電体
は、自発的な電気分極をもち、その自発分極が電場によ
って方向を反転する物質である。この場合、強誘電体層
としては、絶縁破壊電圧が高く、発光層にかかる電圧が
高くなるように誘電率の比較的大きな材料を選ぶことが
必要で、輝度が高まる作用を奏する。The ferroelectric material forming the ferroelectric layer of the present invention is a substance having spontaneous electric polarization, and the spontaneous polarization has its direction reversed by an electric field. In this case, it is necessary to select, as the ferroelectric layer, a material having a relatively high dielectric constant so that the dielectric breakdown voltage is high and the voltage applied to the light emitting layer is high, which has the effect of increasing the brightness.
【００１２】強誘電体層を形成する具体的名材料として
は、ＰＺＴ（ＰｂＺｒＯ3 とＰｂＴｉＯ3 の固溶体…チ
タン酸ジルコン酸鉛）、ＰＬＺＴ（ＰＺＴにＬａを添加
した金属酸化物）、ＳＢＴ（ＳｒＢｉ2 Ｔａ2 Ｏ9 ）や
ＢＩＴ（Ｂｉ4 Ｔｉ3 Ｏ12）などから選ばれた少なくと
も一種で膜状あるいは板状に形成され、その膜厚または
板厚が０．０３〜１．０ｍｍである。Specific materials for forming the ferroelectric layer include PZT (solid solution of PbZrO 3 and PbTiO 3 ... Lead zirconate titanate), PLZT (metal oxide obtained by adding La to PZT), SBT (SrBi). 2 Ta 2 O 9 ) or BIT (Bi 4 Ti 3 O 12 ) or the like, and is formed into a film or plate, and the film thickness or plate thickness is 0.03 to 1.0 mm.
【００１３】この形成厚さの最適値は材料の誘電特性で
決まるが、０．０３ｍｍ以下であると絶縁破壊し易く、
また、厚さが１．０ｍｍを超えると発光効率の低下が大
きくなる不具合がある。The optimum value of the formed thickness is determined by the dielectric characteristics of the material, but if it is 0.03 mm or less, dielectric breakdown easily occurs,
Further, if the thickness exceeds 1.0 mm, there is a problem that the reduction of the luminous efficiency becomes large.
【００１４】また、本発明の固体面状光源では、誘電体
層が、分極されていてもよい。In the solid-state planar light source of the present invention, the dielectric layer may be polarized.
【００１５】さらに、本発明の固体面状光源では、発光
層と面状電極との間に誘電体層が形成されていてもよ
い。この場合、発光層の上下両面を誘電体層で、しかも
一方を他方より強い誘電体層としたので、さらに輝度を
高める作用を奏する。Further, in the solid surface light source of the present invention, a dielectric layer may be formed between the light emitting layer and the surface electrode. In this case, since the upper and lower surfaces of the light emitting layer are made of dielectric layers and one of them is made stronger than the other, it is possible to further enhance the brightness.
【００１６】導電性物質からなる面状電極は、Ｐｔ、Ａ
ｇやＡｕなどの材料で薄膜状に形成されたものである。The planar electrodes made of a conductive material are Pt, A
It is formed into a thin film with a material such as g or Au.
【００１７】透明導電性物質からなる面状電極は、Ｓｎ
Ｏ2 ：Ｓｂやインジウム・スズ酸化物（ＩＴＯ）などの
材料で透明薄膜状に形成されたもので、光が取り出せる
ように光放射面側に形成される。The planar electrode made of a transparent conductive material is Sn
O 2 : Sb, indium tin oxide (ITO), or other material formed in a transparent thin film shape, which is formed on the light emitting surface side so that light can be extracted.
【００１８】発光層は、ＺｎＳ：Ｍｎ（黄橙色）、Ｚｎ
Ｓ：ＳｍＦ3 （橙赤色）、ＣａＳ：Ｅｕ（赤色）、Ｚｎ
Ｓ：ＴｂＦ3 （緑色）、ＳｒＳ：Ｃｅ（青色）、Ｓｒ
Ｓ：Ｃｅ，Ｋ（青色）などの硫化物あるいはＺｎ2 Ｓｉ
Ｏ4 ：Ｍｎなどの金属酸化物の微粒子の表面にＴｂＯX
などを部分的に多数結合したものを主体とする発光物質
などを用いることができる。The light emitting layer is made of ZnS: Mn (yellow orange), Zn
S: SmF 3 (orange red), CaS: Eu (red), Zn
S: TbF 3 (green), SrS: Ce (blue), Sr
S: Sulfide such as Ce, K (blue) or Zn 2 Si
O 4 : TbO x on the surface of fine particles of metal oxide such as Mn
It is possible to use a light-emitting substance mainly composed of a large number of such compounds partially bonded.
【００１９】また、基体を用いるものでは、基体がガラ
ス板やセラミックなどの透明な板状やフィルム状のもの
からなり光放射面をなす。Further, in the case of using the substrate, the substrate is made of a transparent plate or film such as a glass plate or ceramic and forms a light emitting surface.
【００２０】また、本発明での各層の形成は、基板側か
らでも背面側の電極側からでも差支えなく、完成したＥ
Ｌなどにおいて積層順序が正しければよい。The formation of each layer in the present invention can be completed from the substrate side or the back side electrode side without any problem.
It suffices that the stacking order is correct in L and the like.
【００２１】本発明の請求項２に記載の固体面状光源
は、発光層が、１０ｎｍ以下の金属酸化物主体の超微粒
子を一種以上分散してなり、０．５〜５．０μｍの膜厚
で形成されていること特徴とする。In the solid surface light source according to the second aspect of the present invention, the light emitting layer comprises one or more ultrafine particles mainly composed of a metal oxide and having a thickness of 10 nm or less, and has a film thickness of 0.5 to 5.0 μm. It is characterized by being formed by.
【００２２】発光層が、Ｚｎ2 ＳｉＯ4 などの多孔質金
属酸化物の微粒子の表面にＴｂＯXなどの無機発光物を
多数結合したものを主体とする発光物質からなり、微粒
子径が１０ｎｍ以下で、１０ｎｍを超えると発光効率の
低下が大きなるなどの不具合がある。The light emitting layer is composed of a light emitting substance mainly composed of a large number of inorganic light emitting substances such as TbO x bonded to the surface of fine particles of porous metal oxide such as Zn 2 SiO 4 , and the fine particle diameter is 10 nm or less. If it exceeds 10 nm, there are problems such as a large decrease in luminous efficiency.
【００２３】また、発光層中に分散される金属酸化物と
しては、一種に限らずＹ2 Ｏ3 ：ＥｕやＺｎＳ：Ｍｎな
どを複数種用いることができる。また、膜厚さは形成の
ばらつきなどを考慮すると１〜４μｍ程度が好ましい。Further, the metal oxide dispersed in the light emitting layer is not limited to one kind, and a plurality of kinds such as Y 2 O 3 : Eu and ZnS: Mn can be used. Further, the film thickness is preferably about 1 to 4 μm in consideration of variations in formation.
【００２４】なお、金属酸化物の微粒子径の測定は、Ａ
ＦＭやＳＴＭなど走査トンネル顕微鏡や原子間力顕微鏡
などにより行い、その平均粒子径をいう。The particle diameter of the metal oxide is measured by A
The average particle diameter is measured by a scanning tunneling microscope such as FM or STM or an atomic force microscope.
【００２５】[0025]
【発明の実施の形態】 以下，本発明の実施の形態を固
体面状発光源としてＥＬ（エレクトロルミネセンス）を
用い図１〜３を参照して説明する。図１はＥＬの正面
図、図２は図１中のａ−ａ線に沿って切断した部分の断
面図である。BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to FIGS. 1 to 3 using EL (electroluminescence) as a solid-state light emitting source. FIG. 1 is a front view of the EL, and FIG. 2 is a sectional view of a portion cut along the line aa in FIG.
【００２６】図において３はインジウム・スズ酸化物
（ＩＴＯ）からなる透明な面状電極（アノード）、４は
この透明面状電極３上に積層して形成されたＺｎＳ：Ｍ
ｎ（黄橙色）からなる発光層、５はこの発光層４上に積
層して形成されたＰＺＴ（ＰｂＺｒＯ3 とＰｂＴｉＯ3
の固溶体）からなる強誘電体層、６はこの強誘電体層５
上に積層して形成されたＰｔやＡｇなどからなる反射性
を有する面状電極（カソード）で、これら積層物でもっ
てＥＬ１Ａを構成している。In the figure, 3 is a transparent planar electrode (anode) made of indium tin oxide (ITO), and 4 is a ZnS: M layer formed on the transparent planar electrode 3.
The light emitting layer 5 made of n (yellow orange) is PZT (PbZrO 3 and PbTiO 3 formed by stacking on the light emitting layer 4).
Solid solution), 6 is the ferroelectric layer 5
EL1A is composed of a reflective planar electrode (cathode) made of Pt, Ag, or the like, which is formed by stacking layers on top of each other.
【００２７】このＥＬ１Ａは、給電部（図示しない。）
から上記面状電極３，６に通電すると、強誘電体層５を
介し発光層４に電圧が印加され、発光層４が上記作用に
より発光して高輝度を呈するとともに高い発光効率（５
〜１０Ｌｍ／Ｗ（従来１〜３Ｌｍ／Ｗ））が得られるな
ど発光特性が向上できた。This EL1A has a power feeding section (not shown).
When the planar electrodes 3 and 6 are energized from above, a voltage is applied to the light emitting layer 4 through the ferroelectric layer 5, and the light emitting layer 4 emits light by the above action to exhibit high brightness and high luminous efficiency (5
The emission characteristics could be improved, such as -10 Lm / W (conventional 1-3 Lm / W).
【００２８】この発光特性向上のメカニズムは分からな
いが、誘電体層をＰＺＴからなる強誘電体層５とするこ
とによるものと考えられる。すなわち、強誘電体層５は
表面に残留分極をもち、この電荷が交流電圧印加時に外
部電圧に重畳されるように加わり、発光層４への相対的
印加電圧が高くなるためか、あるいは、強誘電体層５の
表面が残留電荷の影響により高電界となって、発光層４
へ直接に電荷を送り込み発光に寄与するなどのことが考
えられる。Although the mechanism for improving the emission characteristics is not known, it is considered that the dielectric layer is the ferroelectric layer 5 made of PZT. That is, the ferroelectric layer 5 has a remanent polarization on the surface, and this charge is added so as to be superimposed on the external voltage when an AC voltage is applied, and the relative voltage applied to the light emitting layer 4 becomes high. The surface of the dielectric layer 5 becomes a high electric field due to the influence of the residual charge, and the light emitting layer 4
It is conceivable that the electric charge is directly sent to and contributes to light emission.
【００２９】なお、発光層４の形成材料としては、Ｚｎ
Ｓ：Ｍｎ（黄橙色）のほかＺｎＳ：ＳｍＦ3 （橙赤
色）、ＣａＳ：Ｅｕ（赤色）、ＺｎＳ：ＴｂＦ3 （緑
色）、ＳｒＳ：Ｃｅ（青色）、ＳｒＳ：Ｃｅ，Ｋ（青
色）などの既知の硫化物からなるものを用いることがで
きる。As a material for forming the light emitting layer 4, Zn was used.
In addition to S: Mn (yellow-orange), ZnS: SmF 3 (orange red), CaS: Eu (red), ZnS: TbF 3 (green), SrS: Ce (blue), SrS: Ce, K (blue), etc. It is possible to use those made of known sulfides.
【００３０】なお、上記ＥＬ１Ａにおいて、透明面状電
極３は図中一点鎖線で示すようにガラスなどからなる透
明な基板２上に積層形成されていてもよい。In the EL 1A, the transparent planar electrode 3 may be laminated and formed on the transparent substrate 2 made of glass or the like as shown by the chain line in the figure.
【００３１】また、図３は発光層４の構成が上記とは異
なる、他の実施例を示す発光層の一部を取り出した拡大
断面図である。この発光層４は、たとえば粒径が約７ｎ
ｍのＺｎ2 ＳｉＯ4 ：Ｍｎの微粒子の三次元的な結合体
である薄膜状の多孔質金属酸化物４１，…の表面に外部
エネルギーを受けて励起し励起状態から基底状態へ戻る
際に発光するように無機発光物４２，…たとえばＴｂＯ
X を多数結合した発光物質からなる。FIG. 3 is an enlarged sectional view showing a part of a light emitting layer showing another embodiment in which the structure of the light emitting layer 4 is different from the above. The light emitting layer 4 has, for example, a particle size of about 7n.
Light is emitted when the surface of the thin-film porous metal oxide 41, which is a three-dimensional combination of Zn 2 SiO 4 : Mn fine particles of m, is excited by external energy and returns from the excited state to the ground state. Inorganic luminescent material 42, ...
It consists of a luminescent material with a large number of bonded Xs .
【００３２】この図３に示すような微細構造の発光層４
であっても、上記実施例と同様に高い発光特性が得られ
た。The light emitting layer 4 having a fine structure as shown in FIG.
Even in this case, high light emission characteristics were obtained as in the above-mentioned examples.
【００３３】そして、そのＥＬの製造は、たとえばＰＺ
Ｔからなる縦３０ｍｍ×横３０ｍｍ×厚さ０．１５ｍｍ
の板状体の背面に、Ｐｔ電極を形成し、Ｐｔ電極と表面
との間に数ｋＶの直流の高電圧を印加して分極処理を行
う。The EL is manufactured by, for example, PZ.
30mm in length x 30mm in width x 0.15mm in thickness made of T
A Pt electrode is formed on the back surface of the plate-shaped body and the polarization treatment is performed by applying a high DC voltage of several kV between the Pt electrode and the surface.
【００３４】また、ＰＺＴにＺｎ2 ＳｉＯ4 ：Ｍｎ約
０．５wt％をスパッタリングなどにより厚さ約１μｍ形
成後、さらに、同様に厚さ約２μｍのＩＴＯ膜を形成す
る。なお、発光層４側の残留分極は負（−）で、上記両
電極３，６間に交流の正弦波電圧を印加する。Further, about 0.5 wt% Zn 2 SiO 4 : Mn is formed on PZT by sputtering or the like to have a thickness of about 1 μm, and then an ITO film having a thickness of about 2 μm is formed in the same manner. The remanent polarization on the side of the light emitting layer 4 is negative (-), and an alternating sine wave voltage is applied between the electrodes 3 and 6.
【００３５】上記のように強誘電体層５に残留分極が有
る場合は、無い場合に比べ低い電圧から高い輝度で発光
し、また、電圧を高くした場合の輝度の飽和傾向が小さ
くなる良好な結果が得られた。As described above, when the ferroelectric layer 5 has remanent polarization, it emits light with a high luminance from a low voltage as compared with the case where it does not, and the saturation tendency of the luminance becomes small when the voltage is increased. Results were obtained.
【００３６】また、図４は本発明のＥＬの他の実施の形
態を示す縦断面図で、図中、図２と同一部分には同一の
符号を付してその説明は省略する。図２のＥＬ１Ａと異
なる点は、図４のＥＬ１Ｂにおいては、発光層４と上記
ＩＴＯ膜からなる透明な面状電極（アノード）３との間
には誘電体層７が形成してある。また、図中８はＡｌ 2
Ｏ3 などのセラミックスなどからなる基板である。FIG. 4 shows another embodiment of the EL of the present invention.
FIG. 2 is a vertical cross-sectional view showing a state in which the same parts as those in FIG.
The reference numerals are given and the description thereof is omitted. Different from EL1A in Figure 2
The point is that in the EL1B of FIG.
Between the transparent planar electrode (anode) 3 made of ITO film
A dielectric layer 7 is formed on the. Also, in the figure, 8 is Al 2
O3It is a substrate made of ceramics, etc.
【００３７】このように、発光層４の上下両面を誘電体
層５，７で、しかも一方を他方より強い誘電体層５とし
たので、絶縁破壊電圧が高く、発光層４にかかる電圧が
高くなるように誘電率の比較的大きな材料を選定したこ
とによりさらに改善傾向がみられた。As described above, since the upper and lower surfaces of the light emitting layer 4 are the dielectric layers 5 and 7 and one of them is the stronger dielectric layer 5, the dielectric breakdown voltage is high and the voltage applied to the light emitting layer 4 is high. A further improvement trend was observed by selecting a material with a relatively large dielectric constant so that
【００３８】なお、上記実施の形態では強誘電体層をＰ
ＺＴで形成したが、本発明はこのＰＺＴに限らず、ＰＬ
ＺＴ、ＳＢＴ、ＢＩＴなどの中から選ばれた少なくとも
一種で形成されたものであってもよい。In the above embodiment, the ferroelectric layer is P
Although it is formed of ZT, the present invention is not limited to this PZT, but PL
It may be formed of at least one selected from ZT, SBT, BIT and the like.
【００３９】[0039]
【発明の効果】 請求項１の発明によれば、強誘電体層
から発光層への供給エネルギーが大きくなって発光に寄
与させることができ、輝度および効率などの発光特性の
向上がはかれる。According to the invention of claim 1, the energy supplied from the ferroelectric layer to the light emitting layer can be increased to contribute to light emission, and the light emitting characteristics such as brightness and efficiency can be improved.
【００４０】請求項２の発明によれば、表面積の大きい
薄膜状の多孔質金属酸化物の表面に、外部エネルギーを
受けて励起し励起状態から基底状態へ戻る際に発光する
ように無機発光物が多数結合しているので、高効率の発
光が得られる。According to the second aspect of the present invention, the surface of the thin film-like porous metal oxide having a large surface area is excited by external energy to be excited to emit light when returning from the excited state to the ground state. Since a large number of are bonded, highly efficient light emission can be obtained.
【図１】 本発明に係る固体面状光源としてＥＬ（エレ
クトロルミネセンス）の実施の形態を示す正面図であ
る。FIG. 1 is a front view showing an embodiment of EL (electroluminescence) as a solid-state planar light source according to the present invention.
【図２】 図１中のａ−ａ線に沿って切断した部分の断
面図である。FIG. 2 is a cross-sectional view of a portion cut along line aa in FIG.
【図３】 発光層の一部を取り出して示す拡大断面図で
ある。FIG. 3 is an enlarged sectional view showing a part of a light emitting layer.
【図４】 本発明に係るＥＬ（エレクトロルミネセン
ス）の他の実施の形態を示す断面図である。FIG. 4 is a sectional view showing another embodiment of an EL (electroluminescence) according to the present invention.
１Ａ，１Ｂ：固体面状光源（ＥＬ（エレクトロルミネセ
ンス））、 ３：透明面状電極、 ４：発光層、 ５：
強誘電体層、 ６：面状電極、 ７：誘電体層1A, 1B: solid-state planar light source (EL (electroluminescence)), 3: transparent planar electrode, 4: light emitting layer, 5:
Ferroelectric layer, 6: planar electrode, 7: dielectric layer
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 ＦＩ テーマコート゛(参考） Ｃ０９Ｋ 11/78 ＣＰＢ Ｃ０９Ｋ 11/78 ＣＰＢ ─────────────────────────────────────────────────── ─── Continuation of front page (51) Int.Cl. 7 Identification code FI theme code (reference) C09K 11/78 CPB C09K 11/78 CPB
Claims (2)
状電極上に積層された強誘電体層と；この強誘電体層上
に積層された発光層と；この発光層上に積層された透明
導電性物質を有してなる透明面状電極と；を備えている
ことを特徴とする固体面状光源。1. A planar electrode having a conductive substance; a ferroelectric layer laminated on the planar electrode; a light emitting layer laminated on the ferroelectric layer; laminated on the light emitting layer. And a transparent planar electrode comprising the transparent conductive material described above.
体の超微粒子を一種以上分散してなり、０．５〜５．０
μｍの膜厚で形成されていること特徴とする上記請求項
１に記載の固体面状光源。2. The light-emitting layer is made by dispersing one or more kinds of ultrafine particles mainly composed of a metal oxide and having a size of 10 nm or less, and is 0.5 to 5.0.
The solid-state planar light source according to claim 1, wherein the solid-state planar light source is formed to have a film thickness of μm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002141396A JP2003332078A (en) | 2002-05-16 | 2002-05-16 | Solid planar light source |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002141396A JP2003332078A (en) | 2002-05-16 | 2002-05-16 | Solid planar light source |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2003332078A true JP2003332078A (en) | 2003-11-21 |
Family
ID=29701992
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002141396A Pending JP2003332078A (en) | 2002-05-16 | 2002-05-16 | Solid planar light source |
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| Country | Link |
|---|---|
| JP (1) | JP2003332078A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20170136166A (en) * | 2016-06-01 | 2017-12-11 | 연세대학교 산학협력단 | Luminous member, method for driving of luminous member, non-volatile memory device, sensor, method for driving of sensor, and display apparatus |
-
2002
- 2002-05-16 JP JP2002141396A patent/JP2003332078A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20170136166A (en) * | 2016-06-01 | 2017-12-11 | 연세대학교 산학협력단 | Luminous member, method for driving of luminous member, non-volatile memory device, sensor, method for driving of sensor, and display apparatus |
| KR101958058B1 (en) * | 2016-06-01 | 2019-07-04 | 연세대학교 산학협력단 | Luminous member, method for driving of luminous member, non-volatile memory device, sensor, method for driving of sensor, and display apparatus |
| US10706768B2 (en) | 2016-06-01 | 2020-07-07 | University-Industry Foundation (Uif), Yonsei University | Luminous member, method of driving luminous member, non-volatile memory device, sensor, method of driving sensor, and display apparatus |
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