JP2003324248A - 半導体レーザ素子 - Google Patents

半導体レーザ素子

Info

Publication number
JP2003324248A
JP2003324248A JP2002127882A JP2002127882A JP2003324248A JP 2003324248 A JP2003324248 A JP 2003324248A JP 2002127882 A JP2002127882 A JP 2002127882A JP 2002127882 A JP2002127882 A JP 2002127882A JP 2003324248 A JP2003324248 A JP 2003324248A
Authority
JP
Japan
Prior art keywords
active layer
layer
lattice constant
semiconductor laser
guide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002127882A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003324248A5 (enExample
Inventor
Takeshi Nagatake
剛 長竹
Shoji Hirata
照二 平田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2002127882A priority Critical patent/JP2003324248A/ja
Priority to US10/423,222 priority patent/US7113532B2/en
Priority to TW092110161A priority patent/TWI231635B/zh
Publication of JP2003324248A publication Critical patent/JP2003324248A/ja
Publication of JP2003324248A5 publication Critical patent/JP2003324248A5/ja
Pending legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H01S5/164—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface with window regions comprising semiconductor material with a wider bandgap than the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3403—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34346—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers
    • H01S5/34366—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers based on InGa(Al)AS

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
JP2002127882A 2002-04-30 2002-04-30 半導体レーザ素子 Pending JP2003324248A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2002127882A JP2003324248A (ja) 2002-04-30 2002-04-30 半導体レーザ素子
US10/423,222 US7113532B2 (en) 2002-04-30 2003-04-25 Semiconductor laser device
TW092110161A TWI231635B (en) 2002-04-30 2003-04-30 Semiconductor laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002127882A JP2003324248A (ja) 2002-04-30 2002-04-30 半導体レーザ素子

Publications (2)

Publication Number Publication Date
JP2003324248A true JP2003324248A (ja) 2003-11-14
JP2003324248A5 JP2003324248A5 (enExample) 2005-04-07

Family

ID=29243875

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002127882A Pending JP2003324248A (ja) 2002-04-30 2002-04-30 半導体レーザ素子

Country Status (3)

Country Link
US (1) US7113532B2 (enExample)
JP (1) JP2003324248A (enExample)
TW (1) TWI231635B (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9917414B2 (en) 2015-07-15 2018-03-13 International Business Machines Corporation Monolithic nanophotonic device on a semiconductor substrate
CN110600996B (zh) * 2019-09-26 2024-05-14 苏州矩阵光电有限公司 一种量子阱层结构、半导体激光器及制备方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4034311A (en) * 1973-02-26 1977-07-05 Matsushita Electronics Corporation Semiconductor laser
US4512022A (en) * 1982-07-13 1985-04-16 At&T Bell Laboratories Semiconductor laser having graded index waveguide
JPH07297485A (ja) * 1994-04-28 1995-11-10 Mitsubishi Electric Corp 半導体レーザ装置，及びその製造方法
JP2000101198A (ja) 1998-09-18 2000-04-07 Fuji Photo Film Co Ltd 半導体レーザ装置
JP2000114654A (ja) 1998-09-30 2000-04-21 Fuji Photo Film Co Ltd 半導体レーザ装置
US6603784B1 (en) * 1998-12-21 2003-08-05 Honeywell International Inc. Mechanical stabilization of lattice mismatched quantum wells

Also Published As

Publication number Publication date
TW200405633A (en) 2004-04-01
US20030202551A1 (en) 2003-10-30
TWI231635B (en) 2005-04-21
US7113532B2 (en) 2006-09-26

Similar Documents

Publication Publication Date Title
US5828684A (en) Dual polarization quantum well laser in the 200 to 600 nanometers range
US11677213B1 (en) Systems for photonic integration in non-polar and semi-polar oriented wave-guided optical devices
US5671242A (en) Strained quantum well structure
US8073029B2 (en) Semiconductor optical device
KR20190125541A (ko) 에칭된 미러들을 구비하는 반극성 ｛20-21｝ ⅲ-족 질화물 레이저 다이오드들
CN103119810B (zh) 半导体装置
US20050201439A1 (en) Semiconductor light emitting device and semiconductor light emitting device module
JPH05235470A (ja) レーザダイオード
CN102204040B (zh) 半导体激光元件
EP0545262B1 (en) Strained quantum well laser diode
US9368940B2 (en) Semiconductor device and manufacturing method of semiconductor device
US6996149B2 (en) Semiconductor laser device and semiconductor laser module
JPH07297485A (ja) 半導体レーザ装置，及びその製造方法
JP2003324248A (ja) 半導体レーザ素子
US20070241344A1 (en) Semiconductor Light Emitting Device
JP4345673B2 (ja) 半導体レーザ
JP2011023493A (ja) 半導体レーザ
JP2006229008A (ja) 半導体レーザ素子
JP2004119768A (ja) 半導体光素子
WO2006106886A1 (ja) 半導体レーザ素子
JP6120903B2 (ja) 半導体レーザ素子
JP4983791B2 (ja) 光半導体素子
JP2001332816A (ja) 半導体レーザ素子
JP2000101198A (ja) 半導体レーザ装置
JP2003023218A (ja) 半導体レーザ素子

Legal Events

Date Code Title Description
RD02 Notification of acceptance of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7422

Effective date: 20040317

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20040426

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20040426

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20040604

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20061228

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20070111

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20070509