JP2003324092A5 - - Google Patents

Claims (9)

In a substrate processing method for etching a thin film formed on a substrate,
Measuring the film thickness or film thickness distribution of the thin film ;
Calculating an etching rate or etching rate uniformity of each of a plurality of etching processing apparatuses for etching the thin film ;
A substrate processing method comprising a step of selecting an etching apparatus based on the measurement result and the calculation result. The substrate processing method according to claim 1,
A substrate processing method comprising a step of excluding an etching apparatus having an etching rate uniformity that does not conform to the film thickness distribution based on the measured film thickness distribution and the calculated etching rate uniformity. The substrate processing method according to claim 1,
A substrate processing method comprising a step of selecting an etching apparatus suitable for the film thickness based on the measured film thickness and etching rate and setting an etching time of the selected etching apparatus. In the substrate processing method in any one of Claims 1-3,
A substrate processing method, wherein the substrate is a semiconductor substrate. In a semiconductor processing method of forming a thin film on a semiconductor substrate, applying a resist on the formed thin film, exposing and developing, and etching the thin film using the exposed and developed resist.
Measuring the thickness of the thin film;
Calculating an etching rate of an etching processing apparatus for etching the semiconductor substrate on which the thin film is formed;
And a step of setting an etching time suitable for the film thickness based on the measured film thickness and the calculated etching rate. In the semiconductor substrate processing method of Claim 5,
Measuring etching rate uniformity and etching rate of the semiconductor substrate etched by the etching apparatus;
And a step of calculating an etching rate and etching rate uniformity after etching the semiconductor substrate of the etching apparatus. The semiconductor processing method according to claim 6.
A semiconductor processing method comprising a step of feeding back the measured etching rate uniformity and etching rate to the calculating step. In a semiconductor processing apparatus for forming a thin film on a semiconductor substrate, applying a resist on the formed thin film, exposing and developing, and further etching the thin film using the exposed and developed resist.
Means for measuring the film thickness distribution of the thin film;
Means for respectively calculating the etching rate uniformity of a plurality of etching processing apparatuses for etching the semiconductor substrate on which the thin film is formed;
A semiconductor processing apparatus comprising: means for selecting an etching apparatus having an etching rate uniformity that matches both the measured film thickness distribution and the etching rate uniformity . The semiconductor processing apparatus according to claim 8.
A semiconductor processing apparatus comprising: means for setting an etching time suitable for the film thickness based on the film thickness and etching rate of the thin film measured in advance.