JP2003318236A5 - - Google Patents

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Publication number
JP2003318236A5
JP2003318236A5 JP2003108292A JP2003108292A JP2003318236A5 JP 2003318236 A5 JP2003318236 A5 JP 2003318236A5 JP 2003108292 A JP2003108292 A JP 2003108292A JP 2003108292 A JP2003108292 A JP 2003108292A JP 2003318236 A5 JP2003318236 A5 JP 2003318236A5
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2003108292A
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JP2003318236A (ja
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Publication date
Priority claimed from US10/121,130 external-priority patent/US6894519B2/en
Application filed filed Critical
Publication of JP2003318236A publication Critical patent/JP2003318236A/ja
Publication of JP2003318236A5 publication Critical patent/JP2003318236A5/ja
Pending legal-status Critical Current

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JP2003108292A 2002-04-11 2003-04-11 半導体ウェハの電気特性測定装置及び測定方法 Pending JP2003318236A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/121130 2002-04-11
US10/121,130 US6894519B2 (en) 2002-04-11 2002-04-11 Apparatus and method for determining electrical properties of a semiconductor wafer

Publications (2)

Publication Number Publication Date
JP2003318236A JP2003318236A (ja) 2003-11-07
JP2003318236A5 true JP2003318236A5 (ja) 2006-05-25

Family

ID=29268665

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003108292A Pending JP2003318236A (ja) 2002-04-11 2003-04-11 半導体ウェハの電気特性測定装置及び測定方法

Country Status (4)

Country Link
US (1) US6894519B2 (ja)
EP (1) EP1363323A3 (ja)
JP (1) JP2003318236A (ja)
TW (1) TWI273256B (ja)

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US20050110478A1 (en) * 2003-11-21 2005-05-26 Peng-Cheng Shi Method and apparatus for detecting electrostatic charges during semiconductor fabrication process
US7023231B2 (en) * 2004-05-14 2006-04-04 Solid State Measurements, Inc. Work function controlled probe for measuring properties of a semiconductor wafer and method of use thereof
KR100595137B1 (ko) 2004-12-31 2006-06-30 동부일렉트로닉스 주식회사 Ｆｉｂ 장치를 이용한 반도체 소자의 전기적 특성 검사 방법
US7952375B2 (en) * 2006-06-06 2011-05-31 Formfactor, Inc. AC coupled parameteric test probe
DE102008044884A1 (de) * 2008-08-29 2010-03-04 Albert-Ludwigs-Universität Freiburg Verfahren zur Bestimmung der Rekombinationseigenschaften an einem Messteilbereich einer Messseite einer Halbleiterstruktur
JP2017508272A (ja) * 2013-12-22 2017-03-23 リハイトン エレクトロニクス， インコーポレイテッドＬｅｈｉｇｈｔｏｎ Ｅｌｅｃｔｒｏｎｉｃｓ，Ｉｎｃ． 光起電性半導体の最大開路電圧を非接触で検知するためのシステムおよび方法
TWI555326B (zh) * 2015-05-29 2016-10-21 Lehighton Electronics Inc 非接觸式感測光伏半導體的最大開路電壓的裝置及方法
DE202016008239U1 (de) * 2015-11-09 2017-06-12 Feinmetall Gmbh Kontaktstift mit Lichtquelle und Kontaktstiftanordnung mit Lichtquelle

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