JP2003318223A - Method and device for mounting - Google Patents
Method and device for mountingInfo
- Publication number
- JP2003318223A JP2003318223A JP2002123790A JP2002123790A JP2003318223A JP 2003318223 A JP2003318223 A JP 2003318223A JP 2002123790 A JP2002123790 A JP 2002123790A JP 2002123790 A JP2002123790 A JP 2002123790A JP 2003318223 A JP2003318223 A JP 2003318223A
- Authority
- JP
- Japan
- Prior art keywords
- objects
- joined
- sealing material
- joining
- mounting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/75—Apparatus for connecting with bump connectors or layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/741—Apparatus for manufacturing means for bonding, e.g. connectors
- H01L24/743—Apparatus for manufacturing layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/7525—Means for applying energy, e.g. heating means
- H01L2224/753—Means for applying energy, e.g. heating means by means of pressure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/757—Means for aligning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、チップや基板等か
らなる被接合物同士を接合する実装方法および実装装置
に関し、とくに、接合部に塗布される封止材中への空気
の巻き込みを抑えて信頼性の高い接合状態が得られるよ
うにした実装方法および実装装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a mounting method and a mounting apparatus for bonding objects to be bonded made up of chips, substrates, etc., and particularly to suppressing entrapment of air in a sealing material applied to a bonding portion. The present invention relates to a mounting method and a mounting device that achieve a highly reliable bonded state.
【0002】[0002]
【従来の技術】被接合物同士の接合、たとえばチップに
バンプを形成し、チップ側または基板側に非導電性接着
剤等からなる封止材を塗布するとともに、チップをフェ
イスダウンの形で基板に近づけ、バンプを基板のパッド
に当接させた後、チップのバンプを加熱溶融させて基板
のパッドと接合するようにしたチップの実装方法はよく
知られている。従来、このような実装方法における封止
材の塗布は大気中で行っていたので、塗布時に空気を巻
き込みやすいという問題がある。巻き込んだ空気は、巻
き込み時には少量であったとしても、加熱により体積が
増加し、比較的大きなボイドになるおそれがあり、この
ようなボイドが残ると、接合の信頼性は低下する。ま
た、モノマーやオリゴマー、溶剤などに含まれている気
化成分が気化されて発生した気泡も加熱によりボイドと
なるおそれがある。この加熱中に発生するボイドについ
ても真空中で脱泡できるため効果がある。2. Description of the Related Art Bonding of objects to be joined, for example, bumps are formed on a chip, a sealing material made of a non-conductive adhesive or the like is applied to the chip side or the substrate side, and the chip is placed face down on the substrate. A method for mounting a chip in which the bump of the chip is brought into contact with the pad of the substrate and then the bump of the chip is heated and melted to be bonded to the pad of the substrate is well known. Conventionally, the application of the sealing material in such a mounting method has been performed in the atmosphere, so that there is a problem that air is likely to be entrapped during the application. Even if a small amount of air is entrapped, the volume of the air may increase due to heating, and a relatively large void may be generated. If such a void remains, the reliability of bonding is reduced. Further, bubbles generated by vaporization of vaporized components contained in the monomers, oligomers, solvents, etc. may become voids by heating. The voids generated during this heating are also effective because they can be degassed in a vacuum.
【0003】また、従来、上記のようなチップの実装も
大気中で行っていたので、使用する封止材中に、あるい
は塗布した封止材中に、たとえ空気を巻き込んでいなか
ったとしても、チップ実装時に、チップと基板との間で
封止材が押し出される際に空気を巻き込みやすいという
問題がある。空気を巻き込みにくくするために、チップ
の中心部から外周に向けて封止材を押し出したとして
も、とくにバンプ周辺では、中でもバンプの根元部等で
は、バンプが邪魔になってそこに存在していた空気が押
し出されにくくなり、結果的に空気が局部的に残るおそ
れがある。残留した空気などは加熱接合後にボイドとし
て残り、接合信頼性が低下する。Conventionally, the above-described chip mounting has also been carried out in the atmosphere, so that even if air is not entrained in the sealing material to be used or the applied sealing material. However, there is a problem that when the chip is mounted, air is likely to be entrained when the sealing material is extruded between the chip and the substrate. Even if the encapsulant is extruded from the center of the chip toward the outer periphery to prevent air from being entrapped, the bumps are present there, especially around the bumps, especially at the roots of the bumps. Air is less likely to be pushed out, and as a result, air may remain locally. Residual air and the like remain as voids after heating and joining, and the joining reliability is reduced.
【0004】[0004]
【発明が解決しようとする課題】そこで本発明の課題
は、上記のような問題点に着目し、封止材塗布の信頼
性、とくに塗布時に空気を巻き込まないようにするとと
もに、接合を伴う実装時にも空気を巻き込まないように
して、被接合物同士の実装における接合信頼性を大幅に
向上可能な実装方法および実装装置を提供することにあ
る。Therefore, an object of the present invention is to pay attention to the above-mentioned problems, to improve the reliability of application of the sealing material, in particular to prevent air from being entrapped during the application, and to mount it with bonding. An object of the present invention is to provide a mounting method and a mounting apparatus capable of significantly improving the bonding reliability in mounting objects to be bonded by preventing air from being entrapped at any time.
【0005】[0005]
【課題を解決するための手段】上記課題を解決するため
に、本発明に係る実装方法は、被接合物同士を接合する
に際し、一方の被接合物の接合面に封止材を塗布すると
ともに、少なくとも接合前の両被接合物間部分をローカ
ルチャンバにより周囲から局部的に密閉してその内部を
所定の真空状態にし、該真空状態下で被接合物同士を接
合することを特徴とする方法からなる。In order to solve the above-mentioned problems, the mounting method according to the present invention applies a sealing material to the bonding surface of one of the objects to be bonded when bonding the objects to be bonded together. A method for locally sealing at least a portion between both objects to be bonded before bonding from a surrounding by a local chamber to bring the inside into a predetermined vacuum state, and bonding the objects to be bonded under the vacuum state Consists of.
【0006】この実装方法においては、封止材の塗布後
に、上記ローカルチャンバにより少なくとも接合前の両
被接合物間部分を密閉してその内部を所定の真空状態に
することができる。まずこの段階で接着剤に含まれる空
気は脱泡される。所定の真空状態にすることにより、接
合部の残留空気を大幅に低減できるので、ボイドを大幅
に低減させた実装が可能になる。In this mounting method, after the sealing material is applied, at least the portion between the objects to be joined before joining can be sealed by the local chamber to bring the inside into a predetermined vacuum state. First, at this stage, the air contained in the adhesive is defoamed. By making a predetermined vacuum state, the residual air in the joint can be greatly reduced, so that the mounting with a significantly reduced void is possible.
【0007】あるいは、ローカルチャンバにより少なく
とも接合前の両被接合物間部分を密閉してその内部を所
定の真空状態にした後、封止材を塗布することもでき
る。真空状態にした後の塗布とすることにより、封止材
塗布時における空気巻き込みも大幅に低減され、その状
態で接合されるので、よりボイドレスの実装が可能とな
る。Alternatively, the sealing material can be applied after at least the portion between the objects to be joined before joining is sealed by the local chamber and the inside thereof is brought into a predetermined vacuum state. By applying after applying a vacuum state, air entrapment during application of the sealing material is significantly reduced, and since bonding is performed in this state, more voidless mounting is possible.
【0008】さらに、ローカルチャンバにより少なくと
も接合前の両被接合物間部分を密閉してその内部を所定
の真空状態にした後、エネルギー波もしくはエネルギー
粒子により被接合物の接合面を洗浄し、しかる後に封止
材を塗布することもできる。エネルギー波もしくはエネ
ルギー粒子による洗浄により接合面の表面が活性化され
た状態で封止材が塗布されるので、ボイドレスを達成し
つつ接合の信頼性を一層向上することが可能となる。Furthermore, after at least the portion between the objects to be joined before joining is sealed by the local chamber and the inside thereof is brought into a predetermined vacuum state, the joining surface of the objects to be joined is washed with energy waves or energy particles. It is also possible to apply the sealing material later. Since the sealing material is applied with the surface of the joint surface being activated by cleaning with energy waves or energy particles, it is possible to further improve the joint reliability while achieving voidlessness.
【0009】この封止材の塗布前の接合面洗浄のための
エネルギー波もしくはエネルギー粒子としては、プラズ
マ、イオンビーム、原子ビーム、ラジカルビーム、レー
ザ等を用いることができるが、中でも取り扱い易さ、装
置のコストや構造の簡易性の面から、プラズマを用いる
ことが好ましい。Plasma, ion beam, atomic beam, radical beam, laser or the like can be used as the energy wave or energy particles for cleaning the bonding surface before the application of the sealing material. From the viewpoint of the cost of the device and the simplicity of the structure, it is preferable to use plasma.
【0010】また、上記所定の真空状態としては、封止
材塗布時とともに実装後におけるボイドレスを効率よく
達成するために、260×10Pa(20Torr)以
下の真空度であることが好ましい。In addition, the predetermined vacuum state is preferably a vacuum degree of 260 × 10 Pa (20 Torr) or less in order to efficiently achieve voidlessness after mounting the sealing material and after mounting.
【0011】また、高精度の実装を行うためには、両被
接合物間に認識手段を挿入する方法などにより両被接合
物の相対位置のアライメントを行うことが必要である
が、本発明では、この認識手段を退避させた後、上記ロ
ーカルチャンバにより少なくとも接合前の両被接合物間
部分を密閉することが好ましい。これによって、認識手
段用のスペースにとらわれず、両被接合物間部分を、小
さい空間状態にて効率よくローカルチャンバで密閉し、
容易かつ迅速に所定の真空状態にすることができる。Further, in order to carry out high-accuracy mounting, it is necessary to align the relative positions of the two objects to be joined by a method of inserting a recognition means between the objects to be joined. After the recognition means is retracted, it is preferable that at least the portion between the objects to be joined before joining is sealed by the local chamber. As a result, the space between the objects to be joined is efficiently sealed in the local chamber in a small space state without being restricted by the space for the recognition means,
A predetermined vacuum state can be easily and quickly obtained.
【0012】本発明に係る実装装置は、被接合物同士を
接合する実装装置であって、接合前に一方の被接合物の
接合面に封止材を塗布する封止材塗布手段と、少なくと
も接合前の両被接合物間部分を周囲から局部的に密閉し
てその内部を所定の真空状態にするローカルチャンバと
を有することを特徴とするものからなる。A mounting apparatus according to the present invention is a mounting apparatus for bonding objects to be bonded to each other, and at least sealing means applying means for applying a sealing material to a bonding surface of one object to be bonded before bonding. A local chamber for locally sealing the portion between the objects to be joined before joining from the surroundings to bring the inside into a predetermined vacuum state.
【0013】この実装装置においては、前記封止材塗布
手段をローカルチャンバを有する装置とは別の装置とし
て封止材の塗布後にローカルチャンバで密閉することが
可能である。つまり、事前に封止材が塗布された基板等
本発明に係る装置で接合することが可能である。また、
ローカルチャンバ内に封止材塗布手段が設けられている
構成とすることにより、ローカルチャンバにより密閉し
その内部を所定の真空状態にした状態で封止材を塗布す
ることを可能とでき、より高いボイドレス状態の達成が
可能となる。In this mounting apparatus, the sealing material applying means can be sealed in the local chamber after applying the sealing material as a device different from the device having the local chamber. That is, it is possible to bond with a device according to the present invention such as a substrate to which a sealing material is applied in advance. Also,
With the configuration in which the sealing material applying means is provided in the local chamber, it is possible to apply the sealing material in a state in which the local chamber is sealed and the inside thereof is in a predetermined vacuum state, which is higher. It becomes possible to achieve the boydless state.
【0014】また、この実装装置には、上記ローカルチ
ャンバ内に、エネルギー波もしくはエネルギー粒子によ
る被接合物の接合面の洗浄手段が設けられていることが
好ましい。洗浄手段のエネルギー波もしくはエネルギー
粒子としては、前述の如くプラズマが好ましい。Further, in this mounting apparatus, it is preferable that a cleaning means for cleaning the bonding surface of the objects to be bonded by energy waves or energy particles is provided in the local chamber. As the energy wave or energy particles of the cleaning means, plasma is preferable as described above.
【0015】さらに、この実装装置は、より高精度の実
装を行うために、ローカルチャンバによる密閉前に両被
接合物間に両被接合物の相対位置のアライメントのため
に進退される認識手段を有することが好ましい。Further, in order to carry out mounting with higher accuracy, this mounting apparatus has a recognition means which is advanced and retracted for alignment of relative positions of both objects to be bonded before sealing by the local chamber. It is preferable to have.
【0016】このような本発明に係る実装方法および装
置においては、封止材の塗布前あるいは塗布後に、両被
接合物間部分が周囲に対しローカルチャンバにより局部
的に密閉されてその内部が所定の真空状態とされ、従来
塗布される封止材中に、あるいは封止材と接合面との間
に巻き込まれていた空気が除去されるので、接合前に空
気巻き込みのない封止材塗布状態が達成される。この状
態で、つまり、所定の真空状態下で、被接合物同士の接
合のために両被接合物が圧接され、その際に塗布されて
いる封止材が両被接合物間部分で中心部から外側に向け
て押し出されるが、所定の真空状態下であるため、実質
的に問題となる量の空気は存在しないので、接合の際に
も空気の巻き込みは発生しない。その結果、ボイドレス
の接合が可能になり、信頼性の高い実装が行われる。In such a mounting method and apparatus according to the present invention, before or after the sealing material is applied, the portion between the objects to be joined is locally sealed to the surroundings by the local chamber and the inside thereof is predetermined. In this state, the air entrapped in the encapsulant that was conventionally applied or between the encapsulant and the bonding surface is removed, so there is no entrapment of encapsulant before joining. Is achieved. In this state, that is, under a predetermined vacuum condition, the two objects to be joined are pressed together for joining the objects to be joined, and the sealing material applied at that time is applied to the center part between the objects to be joined. Although it is extruded from the outside toward the outside, since there is substantially no problematic amount of air under the predetermined vacuum state, entrapment of air does not occur at the time of joining. As a result, it becomes possible to bond voidless members, and highly reliable mounting is performed.
【0017】[0017]
【発明の実施の形態】以下に、本発明の望ましい実施の
形態を、図面を参照して説明する。図1〜図4は、本発
明の第1実施態様に係る実装装置1を用いた実装方法を
示している。図1は、両被接合物の相対位置を所定の精
度範囲内に合わせるためのアライメント工程を示してお
り、被接合物として、一方はチップ2で他方は基板3で
ある場合を例示している。チップ2上には複数のバンプ
4(図1には2つのバンプ4を示してある)が設けられ
ており、基板3には対応するパッド5(たとえば電極な
ど)が設けられている。本実施態様では、基板3を保持
するステージ6とチップ2を保持するツール7が設けら
れ、ステージ6はX、Y方向(水平方向)、またはX、
Y方向と回転方向(θ方向)に位置調整できるようにな
っており、ツール7はZ方向(上下方向)に位置調整で
きるようになっている。ツール7を下降させることによ
り、接合前に両被接合物2、3が適当な間隔をもって対
向され、この状態で両被接合物2、3間に認識手段8
(たとえば、上下方向に視野を有する2視野の認識手
段)が挿入され、チップ2側と基板3側に付されたアラ
イメント用の認識マーク(図示略)を読み取り、読み取
り情報に基づいて、チップ2と基板3の相対位置が所定
の精度範囲内に納まるように、ステージ6が移動制御さ
れる。本実施態様では、チップ2を保持するツール7側
にローカルチャンバ9が設けられているが、アライメン
ト工程ではローカルチャンバ9は開かれた状態にあり、
大気開放状態でアライメントが実施される。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT A preferred embodiment of the present invention will be described below with reference to the drawings. 1 to 4 show a mounting method using the mounting apparatus 1 according to the first embodiment of the present invention. FIG. 1 shows an alignment process for aligning the relative positions of both objects to be bonded within a predetermined accuracy range. As an object to be bonded, one is a chip 2 and the other is a substrate 3. . A plurality of bumps 4 (two bumps 4 are shown in FIG. 1) are provided on the chip 2, and corresponding pads 5 (for example, electrodes) are provided on the substrate 3. In this embodiment, a stage 6 for holding the substrate 3 and a tool 7 for holding the chip 2 are provided, and the stage 6 has the X, Y directions (horizontal direction) or X,
The position can be adjusted in the Y direction and the rotation direction (θ direction), and the tool 7 can be adjusted in the Z direction (vertical direction). By lowering the tool 7, both objects to be joined 2 and 3 are opposed to each other with an appropriate interval before joining, and in this state, the recognition means 8 is provided between the objects to be joined 2 and 3.
(For example, a two-field of view recognizing means having a field of view in the vertical direction) is inserted, an identification mark (not shown) for alignment provided on the chip 2 side and the substrate 3 side is read, and the chip 2 is read based on the read information. The movement of the stage 6 is controlled so that the relative position between the substrate 3 and the substrate 3 falls within a predetermined accuracy range. In the present embodiment, the local chamber 9 is provided on the tool 7 side that holds the chip 2, but the local chamber 9 is in an open state in the alignment step,
Alignment is performed in the open atmosphere.
【0018】なお、上記において、チップ2とは、たと
えば、ICチップ、半導体チップ、光素子、表面実装部
品、ウエハーなど、種類や大きさに関係なく、基板3と
接合させる側の全てのものをいう。バンプ4とは、たと
えば、ハンダバンプ、スタッドバンプなど基板3に設け
られたパッド5と接合する全てのものをいう。また、基
板3とは、たとえば、樹脂基板、ガラス基板、フィルム
基板、チップ、ウエハーなど、種類や大きさに関係な
く、チップ2と接合される側の全てのものをいう。パッ
ド5とは、たとえば、電気配線を伴った電極、電気配線
につながっていないダミー電極など、チップ2に設けら
れたバンプ4と接合する全てのものをいう。In the above description, the chip 2 is, for example, an IC chip, a semiconductor chip, an optical element, a surface-mounted component, a wafer, or the like, whichever is on the side to be bonded to the substrate 3 regardless of its type or size. Say. The bumps 4 are, for example, solder bumps, stud bumps, and all other parts that are bonded to the pads 5 provided on the substrate 3. Further, the substrate 3 means, for example, a resin substrate, a glass substrate, a film substrate, a chip, a wafer, or the like on the side to be bonded to the chip 2, regardless of the type or size. The pad 5 refers to, for example, an electrode accompanied with an electric wiring, a dummy electrode not connected to the electric wiring, or any other member that is bonded to the bump 4 provided on the chip 2.
【0019】また、上記のようなステージ6は、一般に
は、平行移動および/または回転可能に装着されるが、
必要に応じて、それらと昇降とを組み合わせた態様に装
着してもよい。また、ツール7側についても、昇降動作
のみならず、平行移動および/または回転動作を行うこ
とができる装置形態であってもよい。The stage 6 as described above is generally mounted so as to be movable in parallel and / or rotatable.
If necessary, they may be mounted in a combined manner of lifting and lowering. Further, the tool 7 side may have a device form capable of performing not only the raising / lowering operation but also the parallel movement and / or the rotation operation.
【0020】本実施態様では、アライメント後に、上記
認識手段8が退避され、図2に示すように、大気中で、
一方の被接合物(本実施態様では基板3)の接合面に、
封止材塗布手段としてのディスペンサ10(封止材塗布
ノズル)から封止材11が塗布される。塗布する封止材
11としては特に限定されず、非導電性接着剤や異方導
電性接着剤などを使用できる。また、封止材11の形態
としても、ディスペンサ10から塗布されるペースト状
のものに限らず、フィルム形態のものを貼着する方式で
あってもよい。その場合には、封止材塗布手段としてフ
ィルム貼着手段を使用すればよい。フィルム形態のもの
でも、接合時に加熱により流動性が付与される。In this embodiment, after the alignment, the recognition means 8 is retracted, and as shown in FIG.
On the bonding surface of one object to be bonded (the substrate 3 in this embodiment),
The sealing material 11 is applied from a dispenser 10 (sealing material application nozzle) as an encapsulating material applying means. The sealing material 11 to be applied is not particularly limited, and a non-conductive adhesive agent, an anisotropic conductive adhesive agent, or the like can be used. Further, the form of the sealing material 11 is not limited to the paste-like one applied from the dispenser 10, and a film-like one may be applied. In that case, a film sticking means may be used as the sealing material applying means. Even in the film form, the fluidity is imparted by heating at the time of joining.
【0021】続いて図3に示すように、ツール7(ヘッ
ド側)が下降され、ローカルチャンバ9により、少なく
とも接合前の両被接合物間部分が周囲に対して局部的に
密閉される。ローカルチャンバ9の下部側には、たとえ
ばベローズ構造等からなる伸縮自在の弾性シール材12
が設けられており、ツール7の下降に伴って、自動的に
上記密閉状態が形成される。このような弾性シール材1
2によるシール機構以外に、スライドするチャンバ壁
(図示略)によりシール機構を構成してもよい。密閉後
に、たとえば真空ポンプ13による吸引によって、密閉
された内部空間14が所定の真空状態とされる。真空度
は、巻き込む可能性のある空気の量を十分に低く抑える
ために、つまり、たとえ巻き込まれても問題となる大き
さのボイドにまでは発展しないようにするために、26
0×10Pa(20Torr)以下とすることが好まし
い。Subsequently, as shown in FIG. 3, the tool 7 (on the head side) is lowered, and the local chamber 9 locally seals at least the portion between the objects to be joined before joining to the surroundings. On the lower side of the local chamber 9, a stretchable elastic seal member 12 having, for example, a bellows structure is provided.
Is provided, and the closed state is automatically formed as the tool 7 descends. Such an elastic seal material 1
In addition to the sealing mechanism by 2, the sealing mechanism may be configured by a sliding chamber wall (not shown). After the sealing, the sealed internal space 14 is brought into a predetermined vacuum state by suction by the vacuum pump 13, for example. The degree of vacuum is set so that the amount of air that can be trapped is sufficiently low, that is, even if it is trapped, it does not develop into a void of a problematic size.
It is preferably 0 × 10 Pa (20 Torr) or less.
【0022】この所定の真空状態下で、図4に示すよう
に、被接合物同士が(チップ2と基板3が)接合され
る。ツール7が下降されてチップ2のバンプ4が基板3
のパッド5に圧着され、たとえばツール7に内蔵された
ヒータによる加熱によってバンプ4が溶融され、パッド
5に対して電気的に接合される。この圧着の際、塗布さ
れていた封止材11は、両被接合物間部分において中央
部から外側に向けて押し拡げられるが、所定の真空状態
下での接合であるため、実質的に巻き込まれる空気は存
在せず、従来問題となっていた空気巻き込みは発生しな
い。したがって、加熱される際にも、巻き込み空気の体
積増大によるボイド生成を問題とする必要がなくなり、
ボイドレスの望ましい接合形態が達成される。その結
果、信頼性の高い実装を行うことが可能になる。Under this predetermined vacuum condition, the objects to be bonded (chip 2 and substrate 3) are bonded as shown in FIG. The tool 7 is lowered and the bumps 4 of the chip 2 are placed on the substrate 3
The pad 4 is pressure-bonded to the pad 5, and the bump 4 is melted by heating by a heater incorporated in the tool 7, for example, and is electrically bonded to the pad 5. At the time of this pressure bonding, the applied sealing material 11 is pushed outward from the central portion in the portion between the objects to be joined, but since it is the joining under a predetermined vacuum state, it is substantially caught. There is no air to be trapped, and air entrapment, which has been a problem in the past, does not occur. Therefore, even when heated, it is not necessary to consider the void generation due to the increase in the volume of the entrained air,
The desired bond form of the voidless is achieved. As a result, it becomes possible to perform highly reliable mounting.
【0023】図5は、本発明の第2実施態様に係る実装
装置21を用いた実装方法を示している。本実施態様に
おいては、アライメントは図1に示したのと同様に大気
中で行われるが、封止材11の塗布前にローカルチャン
バ9により両被接合物間部分が周囲に対し局部的に密閉
されてその内部が所定の真空状態とされ、該所定の真空
状態下で、ローカルチャンバ9内に設けられた封止材塗
布手段としてのディスペンサ22から接合面(本実施態
様では基板3の接合面)に封止材11が塗布される。所
定の真空状態にした後の塗布であるから、封止材11の
塗布の際の空気巻き込みも(たとえば、塗布される封止
材11中への巻き込みや塗布される封止材11と接合面
との間への巻き込み)確実に抑えられることになる。し
たがって、この状態から図4に示したのと同様に接合す
ることにより、より確実にボイドレスの実装が可能とな
る。FIG. 5 shows a mounting method using the mounting apparatus 21 according to the second embodiment of the present invention. In this embodiment, the alignment is performed in the atmosphere as shown in FIG. 1, but before the encapsulating material 11 is applied, the local chamber 9 locally seals the area between the objects to be joined with the surroundings. Then, the inside thereof is brought into a predetermined vacuum state, and under the predetermined vacuum state, a bonding surface (in the present embodiment, the bonding surface of the substrate 3 is joined from the dispenser 22 as the sealing material applying means provided in the local chamber 9). ) Is applied with the sealing material 11. Since the application is performed after a predetermined vacuum state, air entrapment during application of the sealing material 11 is also possible (for example, entrapment in the applied sealing material 11 or the applied sealing material 11 and the bonding surface). It will be surely suppressed. Therefore, by bonding in this state in the same manner as shown in FIG. 4, the voidless mounting can be performed more reliably.
【0024】図6は、本発明の第3実施態様に係る実装
装置31を用いた実装方法を示している。本実施態様に
おいては、上記第2実施態様に比べ、さらに、封止材1
1の塗布前に、所定の真空状態下のローカルチャンバ9
内にて、エネルギー波もしくはエネルギー粒子による洗
浄手段によって被接合物の接合面が洗浄され、しかる後
に上記封止材11がディスペンサ22から接合面に塗布
される。FIG. 6 shows a mounting method using the mounting apparatus 31 according to the third embodiment of the present invention. In this embodiment, compared with the second embodiment, the sealing material 1 is further added.
Prior to the application of No. 1, the local chamber 9 under a predetermined vacuum condition
Inside, the joining surface of the article to be joined is washed by a washing means using energy waves or energy particles, and then the sealing material 11 is applied to the joining surface from the dispenser 22.
【0025】本実施態様では、エネルギー波もしくはエ
ネルギー粒子としてプラズマ32が使用される。このプ
ラズマ32は、チップ保持ツール7側に設けられたプラ
ズマ発生用電極33と基板保持ステージ6側に設けられ
たプラズマ発生用電極34の極性を交互に切り替えるこ
とにより、チップ2側の接合面および基板3側の接合面
の両方に対して、それぞれ洗浄を実施できる。この洗浄
により、バンプ4やパッド5の表面の酸化膜やコンタミ
層などが除去された活性化した状態で封止材11の塗布
を行うことが可能になり、さらにその酸化膜やコンタミ
層を除去した状態で接合を行うことが可能となるので、
異物の存在しない状態下で接合を行うことができ、接合
の信頼性が格段に向上する。すなわち、前述の如くボイ
ドレスの状態に加え、表面洗浄した状態での接合となる
ので、実装の信頼性がより一層向上される。In this embodiment, the plasma 32 is used as an energy wave or energy particles. The plasma 32 alternately switches the polarities of the plasma generation electrode 33 provided on the chip holding tool 7 side and the plasma generation electrode 34 provided on the substrate holding stage 6 side, thereby forming a bonding surface on the chip 2 side and Both of the joint surfaces on the side of the substrate 3 can be cleaned. By this cleaning, it becomes possible to apply the sealing material 11 in an activated state in which the oxide film and the contamination layer on the surfaces of the bumps 4 and the pads 5 are removed, and further the oxide film and the contamination layer are removed. Since it is possible to join in the state where
Bonding can be performed under the condition that no foreign matter exists, and the reliability of bonding is significantly improved. That is, in addition to the voidless state as described above, the joining is performed in the state where the surface is cleaned, so that the reliability of mounting is further improved.
【0026】なお、接合面の洗浄に使用するエネルギー
波もしくはエネルギー粒子としては、プラズマ以外にイ
オンビーム、原子ビーム、ラジカルビーム、レーザ等を
用いることも可能である。ただし、装置コストやエネル
ギー波照射構造実施化の容易性の面から、プラズマを用
いることが好ましい。また、上記実施態様では所定の真
空状態下でプラズマを照射するようにしたが、たとえば
アルゴンガス等の不活性ガス雰囲気に置換した状態でプ
ラズマ洗浄することも可能であり、また、水素プラズマ
により酸化膜を除去することも可能である。この場合に
は、本発明におけるボイドレス実装を達成するために、
プラズマ洗浄後封止材塗布前にローカルチャンバ9内を
真空引きすることが有効である。As the energy waves or energetic particles used for cleaning the bonding surface, an ion beam, an atomic beam, a radical beam, a laser or the like can be used instead of plasma. However, it is preferable to use plasma from the viewpoint of the cost of the apparatus and the ease of implementing the energy wave irradiation structure. Further, in the above-mentioned embodiment, the plasma is irradiated under a predetermined vacuum state, but it is also possible to perform the plasma cleaning in a state where the atmosphere is replaced with an inert gas atmosphere such as argon gas, and the hydrogen plasma is used to oxidize. It is also possible to remove the membrane. In this case, in order to achieve the voidless mounting in the present invention,
It is effective to evacuate the inside of the local chamber 9 after plasma cleaning and before applying the sealing material.
【0027】[0027]
【発明の効果】以上説明したように、本発明に係る実装
方法および実装装置によれば、ローカルチャンバによる
局部真空状態下での実装を行うようにしたので、封止材
中への空気の巻き込みを確実に抑えることが可能にな
り、ボイドレスでの実装が可能となり、実装における接
合信頼性を大幅に向上することができる。As described above, according to the mounting method and the mounting apparatus of the present invention, since the mounting is performed in the local vacuum state by the local chamber, the entrainment of air in the encapsulant is performed. It is possible to reliably suppress the above, and it becomes possible to mount by voidless, and it is possible to greatly improve the bonding reliability in mounting.
【図面の簡単な説明】[Brief description of drawings]
【図1】本発明の第1実施態様に係る実装装置における
アライメント工程を示す概略構成図である。FIG. 1 is a schematic configuration diagram showing an alignment step in a mounting apparatus according to a first embodiment of the present invention.
【図2】図1の実装装置における封止材塗布工程を示す
概略構成図である。FIG. 2 is a schematic configuration diagram showing a sealing material applying step in the mounting apparatus of FIG.
【図3】図1の実装装置におけるローカルチャンバによ
る密閉、真空引き工程を示す概略構成図である。3 is a schematic configuration diagram showing a process of sealing and vacuuming by a local chamber in the mounting apparatus of FIG.
【図4】図1の実装装置における接合工程を示す概略構
成図である。FIG. 4 is a schematic configuration diagram showing a joining process in the mounting apparatus of FIG.
【図5】本発明の第2実施態様に係る実装装置の概略構
成図である。FIG. 5 is a schematic configuration diagram of a mounting apparatus according to a second embodiment of the present invention.
【図6】本発明の第3実施態様に係る実装装置の概略構
成図である。FIG. 6 is a schematic configuration diagram of a mounting apparatus according to a third embodiment of the present invention.
1、21、31 実装装置 2 一方の被接合物としてのチップ 3 他方の被接合物としての基板 4 バンプ 5 パッド 6 ステージ 7 ツール 8 認識手段 9 ローカルチャンバ 10、22 封止材塗布手段としてのディスペンサ 11 封止材 12 弾性シール材 13 真空ポンプ 14 密閉された内部空間 32 プラズマ 33、34 プラズマ発生用電極 1, 21, 31 mounting device 2 Chip as one object to be bonded 3 Substrate as the other object 4 bumps 5 pads 6 stages 7 tools 8 recognition means 9 Local chamber 10, 22 Dispenser as means for applying sealing material 11 Sealant 12 Elastic seal material 13 Vacuum pump 14 sealed internal space 32 plasma 33, 34 Plasma generation electrode
Claims (13)
被接合物の接合面に封止材を塗布するとともに、少なく
とも接合前の両被接合物間部分をローカルチャンバによ
り周囲から局部的に密閉してその内部を所定の真空状態
にし、該真空状態下で被接合物同士を接合することを特
徴とする実装方法。1. When joining objects to be joined together, a sealing material is applied to a joining surface of one object to be joined, and at least a portion between both objects to be joined before joining is locally localized from the surroundings by a local chamber. A mounting method, which comprises hermetically sealing the inside of the container to a predetermined vacuum state and bonding the objects to be bonded together under the vacuum state.
バにより少なくとも接合前の両被接合物間部分を密閉し
てその内部を所定の真空状態にする、請求項1の実装方
法。2. The mounting method according to claim 1, wherein after the sealing material is applied, at least the portion between the objects to be joined before the joining is sealed by the local chamber and the inside thereof is brought into a predetermined vacuum state.
前の両被接合物間部分を密閉してその内部を所定の真空
状態にした後、前記封止材を塗布する、請求項1の実装
方法。3. The mounting method according to claim 1, wherein at least a portion between the objects to be joined before joining is sealed by a local chamber to bring the inside into a predetermined vacuum state, and then the sealing material is applied.
前の両被接合物間部分を密閉してその内部を所定の真空
状態にした後、エネルギー波もしくはエネルギー粒子に
より被接合物の接合面を洗浄し、しかる後に前記封止材
を塗布する、請求項1の実装方法。4. A local chamber is used to seal at least a portion between the objects to be joined before joining and to bring the inside into a predetermined vacuum state, and then the joining surface of the objects to be joined is washed with energy waves or energy particles. The mounting method according to claim 1, wherein the sealing material is applied later.
プラズマである、請求項4の実装方法。5. The mounting method according to claim 4, wherein the energy wave or the energy particle is plasma.
以下の真空度である、請求項1〜5のいずれかに記載の
実装方法。6. The predetermined vacuum state is 260 × 10 Pa
The mounting method according to claim 1, which has the following vacuum degree.
接合物の相対位置のアライメントを行い、前記認識手段
を退避させた後、前記ローカルチャンバにより少なくと
も接合前の両被接合物間部分を密閉する、請求項1〜6
のいずれかに記載の実装方法。7. An object to be joined at least before joining by the local chamber after the recognition means is inserted between the objects to be joined to align the relative positions of the objects to be joined and the identifying means is retracted. Sealing the space portion, Claims 1 to 6.
The mounting method described in any one of.
て、接合前に一方の被接合物の接合面に封止材を塗布す
る封止材塗布手段と、少なくとも接合前の両被接合物間
部分を周囲から局部的に密閉してその内部を所定の真空
状態にするローカルチャンバとを有することを特徴とす
る実装装置。8. A mounting apparatus for joining objects to be joined together, wherein a sealing material applying means for applying a sealing material to a joining surface of one object to be joined before joining, and at least both joined objects before joining. A mounting apparatus comprising: a local chamber that locally seals a space between objects from the surroundings to bring the inside into a predetermined vacuum state.
別の装置として前記封止材塗布手段が設けられている、
請求項8の実装装置。9. The encapsulating material applying means is provided as a device different from the device having the local chamber.
The mounting apparatus according to claim 8.
塗布手段が設けられている、請求項8の実装装置。10. The mounting apparatus according to claim 8, wherein the encapsulating material applying means is provided in the local chamber.
ー波もしくはエネルギー粒子による被接合物の接合面の
洗浄手段が設けられている、請求項8〜10のいずれか
に記載の実装装置。11. The mounting apparatus according to claim 8, wherein a cleaning means for cleaning a bonding surface of an object to be bonded by an energy wave or energy particles is provided in the local chamber.
ルギー粒子がプラズマである、請求項11の実装装置。12. The mounting apparatus according to claim 11, wherein the energy wave or energy particles of the cleaning means is plasma.
密閉前に両被接合物間に両被接合物の相対位置のアライ
メントのために進退される認識手段を有する、請求項8
〜12のいずれかに記載の実装装置。13. The recognizing means is further provided for advancing and retracting between the objects to be joined for sealing the relative positions of the objects to be joined before sealing by the local chamber.
13. The mounting device according to any one of to 12.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002123790A JP2003318223A (en) | 2002-04-25 | 2002-04-25 | Method and device for mounting |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002123790A JP2003318223A (en) | 2002-04-25 | 2002-04-25 | Method and device for mounting |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2003318223A true JP2003318223A (en) | 2003-11-07 |
Family
ID=29538984
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2002123790A Pending JP2003318223A (en) | 2002-04-25 | 2002-04-25 | Method and device for mounting |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2003318223A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012004603A (en) * | 2004-09-15 | 2012-01-05 | Seiko Epson Corp | Mounting structure for semiconductor device, method for mounting semiconductor device and substrate |
-
2002
- 2002-04-25 JP JP2002123790A patent/JP2003318223A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012004603A (en) * | 2004-09-15 | 2012-01-05 | Seiko Epson Corp | Mounting structure for semiconductor device, method for mounting semiconductor device and substrate |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP2003318229A (en) | Packaging method and device thereof | |
KR100691759B1 (en) | Joining method and joining device | |
JP5256407B2 (en) | Bonding method, device made by this method, bonding apparatus, and substrate bonded by this method | |
WO2002015654A1 (en) | Mounting method and mounting device | |
JP2007516602A (en) | Manufacturing structure and method of a capped tip containing a flowable conductive medium | |
WO2003071604A1 (en) | Semiconductor bonding method and multilayer semiconductor produced by the method | |
JP3922870B2 (en) | Implementation method | |
JP2003318223A (en) | Method and device for mounting | |
JP2000138255A (en) | Method and system for manufacturing semiconductor device | |
JP3014577B2 (en) | Method for manufacturing semiconductor device | |
JP4089609B2 (en) | Electronic device package and method of manufacturing electronic device package | |
JP3075398B2 (en) | Ultrasonic bonding collet and bonding method | |
JPWO2003001586A1 (en) | Mounting method and device | |
JP2000133679A (en) | Method for mounting bumped electronic part and mounted body | |
JPH11121484A (en) | Semiconductor device, and method and device for its manufacture | |
JPH08241900A (en) | Resin-sealing of flip-chip mounted body | |
JP4306533B2 (en) | Electronic component mounting equipment | |
JP3558905B2 (en) | Method for manufacturing flip-chip type semiconductor device and semiconductor manufacturing apparatus | |
JP3915624B2 (en) | Electronic component mounting apparatus and electronic component mounting method | |
JP2000091285A (en) | Grinding method of semiconductor object | |
JP2000349114A (en) | Semiconductor device and manufacture thereof | |
JP2003100805A (en) | Manufacturing method of semiconductor device | |
JP2000349124A (en) | Semiconductor device nd manufacture thereof | |
TW200423841A (en) | Package method of CMOS/CCD image sensor | |
JP2004311602A (en) | Method for packaging ic chip |