JP2003309255A - Semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To achieve miniaturization and the cost reduction of a semiconductor device. <P>SOLUTION: A substrate 1 is provided with pixels 300 arranged in a two-dimensional shape, a first connection electrode 10 formed at the periphery of the pixels 300, and lead-out wirings Lsig1001 to Lsig1200, Lg1001 to Lg1200 which are formed below the first connection electrode 10 via an insulating layer 3 and connect the first connection electrode 10 with the respective pixels 300. <P>COPYRIGHT: (C)2004,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device, for example, a display device using a thin film transistor such as a liquid crystal television / liquid crystal projector formed by a large area process, a facsimile / digital copier, or an X-ray, α The present invention relates to a semiconductor device related to a radiation detection device including a ray, a β ray, and a γ ray.

[0002]

2. Description of the Related Art Conventionally, a reading device such as a facsimile, a copying machine, a scanner or an X-ray image pickup device has a combination of a reduction optical system and a CCD sensor. However, in recent years, hydrogenated amorphous silicon (hereinafter referred to as “a-S
i ". By the development of the photoelectric conversion semiconductor material typified by 1), the development of the contact type sensor in which the photoelectric conversion element and the signal processing unit are formed on a large-area substrate and read by an optical system of the same size as the information source is in progress.

In particular, a-Si is used not only as a photoelectric conversion material but also as a thin film field effect transistor (hereinafter referred to as "TFT").
Since it can also be used as a semiconductor material (referred to as "), it has an advantage that it can be formed simultaneously with the photoelectric conversion semiconductor layer and the semiconductor layer of the TFT.

FIG. 3 (a) is a schematic plan view of a two-dimensional image reading apparatus using a conventional photoelectric conversion element. Figure 3
3B is a sectional view taken along the line AA ′ of FIG.

In FIGS. 3 (a) and 3 (b), 1 is a substrate of a photoelectric conversion device made of glass or the like. Pixels formed by photoelectric conversion elements, TFTs, etc. on the substrate 1 have a pixel pitch of 0. They are regularly arranged in a matrix of 200 × 200 by 0.2 mm.

A common control wiring (not shown) for controlling the TFTs in the pixel 300 is connected from one side of the pixel region to each pixel column by the lead wirings Lg1 to Lg200, and each of the electric connection portions 500a and 500b is provided with 100. It is distributed to the lines and connected to each connection electrode 510. The electrical connecting portions 500a and 500b are the anisotropic conductive film 400.
And the part in contact with this.

In addition, from the other side of the pixel region, lead wires Lsig1 to Lsig200 are connected to a common signal wire (not shown) for reading a signal from the photoelectric conversion element in the pixel 300 for each pixel row. , Each of the connection electrodes 51 distributed to the electrical connection portions 500c and 500d in the same manner.
It is connected to 0.

The arrangement of the connection electrodes 510 in each of the connecting portions 500a to 500d is configured in the same manner, and each electric connecting portion 5 is arranged.
The connection electrodes 510 of 00a to 500d have 100 electrodes.
Line, electrode length 3mm, electrode pitch 0.1mm,
The electrode width is 0.05 mm.

Reference numerals 200a to 200d denote wiring portions, which are flexible printed circuits.
(Tape with IC mounted on tape or tape carrier)
Carrier package) or the like, a film-like printed wiring board 202, a wiring 201 formed by plating Cu on the wiring board 202 with Sn or the like, and a second connection electrode 520 which is the tip of the wiring 201. ing.

The second connection electrode 520 is the photoelectric conversion device 1
The first connection electrodes 510 formed on each of the electrical connection portions 500a to 500d on the H.00 are opposed to each other, for example, in the same arrangement, the number of electrodes is 100 lines, and the pitch between the electrodes is 0.
It is formed to have a width of 1 mm and an electrode width of 0.05 mm.

A cover lay 203 made of the same material as the solder resist or the wiring board 202 is formed on each wiring 201.

As shown in FIG. 3B, the photoelectric conversion device 1
00 and the wiring portions 200a to 200d correspond to the respective electrical connection portions 5
00a to 500d, the connection electrode 510 on the photoelectric conversion device 100 and the connection electrode 520 on each of the wiring portions 200a to 200d are arranged so as to face and overlap with each other, and electrically connected via the anisotropic conductive film 400 therebetween. It is connected to the.

In the anisotropic conductive film 400, conductive particles 401 such as fine metal particles are dispersed in a thermosetting or thermoplastic film-like adhesive material, and by heating and compression bonding between the upper and lower electrodes. The conductive particles 401 existing in the above are pressure-contacted and connected, and the adhesive is cured, so that the photoelectric conversion device 100
And the wiring portions 200a to 200d are adhesively fixed.

In this way, the photoelectric conversion device 100 and the external electric circuit (not shown) are electrically connected.

In such an electrical connection, the overlapping area of the first connection electrode 510 and the second connection electrode 520 is larger than that of the other connection methods, and each of the electrical connection parts 500a-5a.
The size of 00d occupies about 2 to 5 mm in the length direction of the connection electrode.

Further, since the connection is performed by thermocompression bonding, the wiring substrate 202 of the wiring changes the cumulative pitch of the connection electrodes 520 due to thermal expansion, and the pattern pitch with the first connection electrodes 510 is deviated.

Therefore, the width of the wiring cannot be wide, and the number of connection electrodes per wiring is limited. Photoelectric conversion device 10
When the number of pixels on 0 increases and the number of connecting electrodes increases, a plurality of electric connecting portions 500 are arranged (here, 2 places × 2 places),
Multiple wirings are connected (here, 2 locations x 2 locations).

However, in this case, the wiring portions 200a and 20
A certain degree of clearance is required between 0b, 200c, and 200d in order to avoid interference for reasons such as the accuracy of the outer dimensions of the wiring and the contact with the pressure head of the thermocompression bonding machine.

For this reason, a connection electrode cannot be formed on the line with the common control wiring and the common signal wiring in the pixel 300, and a deviation occurs, and Lg1 to Lg200, Lsig1 to Lsig.
It is necessary to connect each wiring in the pixel 300 to the connection electrode by a lead wiring such as 200.

Also, when the pixel arrangement pitch and the connection electrode arrangement pitch do not match, a similar shift occurs and it is necessary to perform pitch conversion by the lead wiring.

[0021]

By the way, the semiconductor device is required to be downsized and reduced in cost, but it has been difficult to downsize the conventional semiconductor device because of its structure. Further, if the entire device can be downsized without downsizing the mounted parts, the cost can be reduced.

Therefore, it is an object of the present invention to devise a mounting method for a substrate having a semiconductor element to reduce the size and cost of the semiconductor device.

[0023]

In order to solve the above-mentioned problems, a semiconductor device of the present invention is a semiconductor device in which two-dimensionally arranged semiconductor elements, electrodes formed around each semiconductor element, And a wiring provided between the semiconductor element and the electrode formed via an insulating layer.

A radiation detection system of the present invention is characterized by including the above semiconductor device and a wavelength converter for converting radiation into an optical signal.

That is, according to the present invention, the size of the semiconductor device is reduced by arranging the electrodes and the wiring so as to overlap each other to reduce the size of the substrate.

[0026]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the drawings.

FIG. 1A is a schematic plan view of a two-dimensional image reading apparatus according to an embodiment of the present invention. Figure 1 (b) shows
It is sectional drawing of AA 'of FIG.1 (a). Note that FIG.
3 (a) and FIG. 1 (b), FIG. 3 (a) and FIG. 3 (b)
The same parts as those shown in are denoted by the same reference numerals.

As shown in FIGS. 1 (a) and 1 (b), in the present embodiment, electrical connection portions 500a to 500d,
Lead wires Lg1 to Lg200, Lsig1 to Lsi
g200 to form a pixel 300
The space between the wiring portions 200a to 200d is reduced.

Specifically, as shown in FIG. 1B, the lead wires Lg1001 to Lg1200, Lsig10.
01 to Lsig 1200 are insulated from each other by the insulating layer 3, and the first connection electrode 10 is formed on the insulating layer 3.

The first connection electrode 10 has an opening at the end of the insulating layer 3, and leads through the lead wires Lg1001 to Lg.
1200, Lsig1001 to Lsig1200 are electrically connected.

First connection electrode 10 and second connection electrode 20
The connection with the side is the same as that shown in FIG. Here, flexible elastic conductive particles 402 in which a metal such as Au is plated around the minute resin balls on the anisotropic conductive film 400.
Of the first connection electrode 10 and the second connection electrode
Is connected to the connection electrode 20 of.

Therefore, damage to the intermediate layer such as the insulating layer 3 is reduced, and the first connecting electrode and the lead wiring are short-circuited via the conductive particles by the conductive particles such as when hard Ni particles are used. It eliminates the problem of being lost.

FIG. 2A is an enlarged plan view of the vicinity of the pixel 300 in the first row and first column shown in FIGS. 1A and 1B.
FIG. 2B is a sectional view taken along the line AA ′. Note that FIG.
For convenience of description, the protective layer 7 is not shown in FIG.

As shown in FIGS. 2A and 2B, the pixel 300 includes a photoelectric conversion element S11 for converting an optical signal into an electric signal and an electric signal converted by the photoelectric conversion element S11 for the pixel 300. TFT element section T11 for reading out to outside
A common control wiring g1 for transmitting a control signal for switching the gate of the TFT element section T11 on / off, a common signal wiring Sig1 for transmitting a signal read when the TFT element section T11 is turned on, and A common bias line RF for setting the photoelectric conversion element S11 and the like to a predetermined potential prior to reading an electric signal is provided.

The common signal line Sig1 and the common bias line RF are collectively referred to as an upper electrode layer 6.

These are integrally formed on the substrate 1 by a simple process so that the pixels 300 are aligned and arranged in the same configuration and the same pattern.

The photoelectric conversion element S11 and the TFT element portion T11
Is a lower electrode 2, an insulating layer 3 made of a SiNx film or the like,
An i layer 4 made of a-Si: H and an n ⁺ layer 5 made of n ⁺ -a-Si: H are provided. Furthermore, the photoelectric conversion element S
11 and the surface of the TFT element portion T11 are covered with a protective layer 7 made of a SiN _x film or the like.

Each layer is sequentially sputtered / CVD on the substrate 1.
It is formed by deposition by an apparatus or the like and patterning by a dry etching layer apparatus such as CDE / RIE.

In this embodiment, the first connection electrode 10 and the upper conductive layer 6 are formed of the same material (such as Al) in the same step,
Lead wires Lg1001 to Lg1200 and Lsig
1001 to Lsig 1200 and the lower conductive layer 2 are formed of the same material (Cr, ITO, etc.) in the same step.

The pixel 3 of the photoelectric conversion device of this embodiment
If a phosphor layer that converts radiation including X-rays, α-rays, β-rays, and γ-rays into visible light or the like is provided on 00, for example, CSI or the like is formed by vapor deposition, a small radiation detection device Can be produced.

In the present embodiment, the photoelectric conversion device has been described as an example. However, by providing a light emitting element or the like instead of the photoelectric conversion element, a display device such as a liquid crystal television / liquid crystal projector or a facsimile / digital copier. The same configuration can be used to reduce the size.

[0042]

As described above, according to the present invention,
Since the substrate is downsized, the semiconductor device can be downsized and the cost can be reduced.

[Brief description of drawings]

FIG. 1 is a schematic plan view and a sectional view of a two-dimensional image reading apparatus according to an embodiment of the present invention.

2A and 2B are an enlarged plan view and a cross-sectional view near a pixel 300 in the first row and first column shown in FIG.

FIG. 3 is a schematic plan view and a sectional view of a conventional two-dimensional image reading device using a photoelectric conversion element.

[Explanation of symbols]

1 substrate 2 lower conductive layer 3 insulating layer 4 i layer 5 n ⁺ layer 6 upper conductive layer 7 protective layer 100, 20 photoelectric conversion device 300 pixel 400 anisotropic conductive film 401, 402 conductive particles 500a to 500d electric connection part 510, 10 First Connection Electrode 520 Second Connection Electrode Lg1 to Lg200, Lsig1 to Lsig200, L
g1001 to Lg1200, Lsig1001 to Lsi
g1200 Lead-out wiring g1 Common control wiring Sig1 Common signal wiring S11 Photoelectric conversion element T11 TFT element section RF Common bias line

─────────────────────────────────────────────────── ─── Continuation of front page (51) Int.Cl. ⁷ Identification code FI theme code (reference) G09F 9/30 348 H01L 27/14 D H01L 27/146 C F term (reference) 2H092 GA48 GA51 JA24 JA28 JA34 JA37 JA41 JB22 JB31 MA31 NA25 NA29 4M118 AB01 BA05 CA02 CA32 FB09 FB13 FB24 FB25 HA19 HA22 HA25 HA27 HA29 HA32 5C094 AA15 AA44 BA02 CA19 DA15 DB02 EA10 FA02 FB15 JA08 5G435 AA18 BB11 CC09 EE13 LL13 EE42 LL42

Claims (7)

[Claims] 1. A semiconductor element arranged two-dimensionally, an electrode formed around each semiconductor element, an electrode formed below the electrode via an insulating layer, and each semiconductor element. A semiconductor device having a substrate provided with wiring for connection. 2. The semiconductor device according to claim 1, wherein the insulating layer is the same layer as the insulating layer formed in the semiconductor element. 3. The electrode is electrically connected to a wiring board through the conductive particles by anisotropic connection using an adhesive film or resin containing conductive particles therein. 2. The semiconductor device according to 2. 4. The semiconductor device according to claim 3, wherein the conductive particles are particles in which resin particles are plated around with metal. 5. The semiconductor element is a photoelectric conversion element that converts an optical signal into an electric signal.
5. The semiconductor device according to any one of items 4 to 4. 6. A switch element for controlling reading of the converted electric signal is formed in the vicinity of each photoelectric conversion element, and a wiring for sending a signal to the switch element is also formed under the electrode. The semiconductor device according to claim 5, wherein 7. A radiation detection system comprising the semiconductor device according to claim 5 or 6, and a wavelength converter for converting radiation into an optical signal.