JP2003305638A - Polishing device and polishing method - Google Patents
Polishing device and polishing methodInfo
- Publication number
- JP2003305638A JP2003305638A JP2002109929A JP2002109929A JP2003305638A JP 2003305638 A JP2003305638 A JP 2003305638A JP 2002109929 A JP2002109929 A JP 2002109929A JP 2002109929 A JP2002109929 A JP 2002109929A JP 2003305638 A JP2003305638 A JP 2003305638A
- Authority
- JP
- Japan
- Prior art keywords
- polishing
- surface plate
- finishing
- polished
- rough
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は研磨装置及び研磨方
法に関するものであり、例えば、多数の薄膜磁気ヘッド
素子を設けたスライダーバーの最終仕上げ工程の研磨工
程を効率化するための構成に特徴のある研磨装置及び研
磨方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a polishing apparatus and a polishing method, and is characterized by, for example, a structure for increasing the efficiency of the polishing process of the final finishing process of a slider bar provided with a large number of thin film magnetic head elements. The present invention relates to a polishing apparatus and a polishing method.
【０００２】[0002]
【従来の技術】近年、コンピュータの外部記憶装置であ
るハードディスク装置等の磁気ヘッドとしては、ハード
ディスク装置等の高密度化、高速化の要請の高まりに伴
い、巨大磁気抵抗効果を利用した再生用磁気センサと誘
導型の書込ヘッドをＡｌ2 Ｏ3−ＴｉＣ基板上に一体に
積層して形成して磁気ヘッドスライダーとしている。2. Description of the Related Art In recent years, as a magnetic head for a hard disk drive or the like which is an external storage device of a computer, a reproducing magnetic field utilizing a giant magnetoresistive effect has been demanded along with an increasing demand for higher density and higher speed of the hard disk drive. A magnetic head slider is formed by integrally forming a sensor and an inductive write head on an Al 2 O 3 —TiC substrate.
【０００３】この磁気ヘッドスライダーは、スライダー
の母体となるＡｌ2 Ｏ3 −ＴｉＣ基板上に、Ａｌ2 Ｏ3
膜を介してＮｉＦｅ合金等からなる下部シールド層を電
解メッキ法により形成し、次いで、Ａｌ2 Ｏ3 等のギャ
ップスペーサ層を介してスピンバルブ構造の磁気抵抗効
果素子をスパッタリング法によって設けて所定の形状に
パターニングしたのち、磁気抵抗効果素子の両端にＡｕ
等からなる導電膜を堆積させてリード電極を形成する。[0003] The magnetic head slider, the Al 2 O 3 -TiC substrate comprising a base of the slider, Al 2 O 3
A lower shield layer made of a NiFe alloy or the like is formed through the film by an electrolytic plating method, and then a magnetoresistive effect element having a spin valve structure is provided by a sputtering method through a gap spacer layer such as Al 2 O 3 or the like to form a predetermined shield layer. After patterning into a shape, Au is applied to both ends of the magnetoresistive effect element.
A lead electrode is formed by depositing a conductive film made of, for example.
【０００４】次いで、再び、Ａｌ2 Ｏ3 等のギャップス
ペーサ層を介してＮｉＦｅ合金等からなる上部シールド
層を兼ねる下部磁極層を電解メッキ法によって設ける。
勿論、場合によっては、上部シールド層と下部磁極層を
別々に作製しても良い。次いで、その上にＡｌ2 Ｏ3 等
からなるライトギャップ層を設けたのち、レジスト等の
第１層間絶縁膜を介して電解メッキ法によってＣｕ層を
水平スパイラル状のパターンに堆積させてライトコイル
を形成するととともに、その両端にライト電極を設け
る。Then, again, a lower magnetic pole layer also serving as an upper shield layer made of NiFe alloy or the like is provided by electrolytic plating through a gap spacer layer such as Al 2 O 3 or the like.
Of course, in some cases, the upper shield layer and the lower pole layer may be manufactured separately. Then, a write gap layer made of Al 2 O 3 or the like is provided thereon, and then a Cu layer is deposited in a horizontal spiral pattern by electrolytic plating through a first interlayer insulating film such as a resist to form a write coil. At the same time as the formation, the light electrodes are provided at both ends thereof.
【０００５】次いで、ライトコイルを覆うレジスト等か
らなる第２層間絶縁膜を設けたのち、Ｔｉ膜等からなる
メッキベース層を設け、その上にメッキフレームとなる
レジストマスクを利用して、選択的にＮｉＦｅ等を電解
メッキすることによって上部磁極層及び先端部のライト
ポールを形成する。Next, a second interlayer insulating film made of a resist or the like for covering the write coil is provided, and then a plating base layer made of a Ti film or the like is provided, and a resist mask serving as a plating frame is used to selectively form the base layer. The upper pole layer and the write pole of the tip end are formed by electrolytically plating NiFe or the like on.
【０００６】次いで、レジストマスクを除去したのち、
Ａｒイオンを用いたイオンミリングを施すことによって
メッキベース層の露出部を除去し、次いで、全面にＡｌ
2 Ｏ 3 膜を設けて保護膜としたのち、基板を切断してス
ライダーバーとする。Next, after removing the resist mask,
By performing ion milling with Ar ions
Remove the exposed part of the plating base layer, and then
2O 3After providing a film to make a protective film, cut the substrate
The rider bar.
【０００７】次いで、このスライダーバーの状態におい
て、ライトポールの長さ、即ち、ギャップ深さを調整す
るための研削、研磨等を含めたスライダー加工を行な
い、最後にこのスライダーバーを個片状のスライダーに
切断することにより磁気抵抗効果素子を利用したリード
用のＭＲヘッドと、ライト用の誘導型の薄膜磁気ヘッド
とを複合化した磁気ヘッドスライダーが得られる。Next, in the slider bar state, slider processing including grinding and polishing for adjusting the length of the light pole, that is, the gap depth is performed, and finally the slider bar is cut into individual pieces. By cutting into sliders, a magnetic head slider can be obtained in which a read MR head using a magnetoresistive effect element and an inductive thin film magnetic head for writing are combined.
【０００８】このスライダー加工においては、最終的に
スクラッチ傷の極めて少ない良好な加工面が要求される
ため、粗削り工程と最終仕上げ工程の複数の工程で行っ
ているが、この最終仕上げ工程においては、スクラッチ
傷の除去や加工品質の安定化が求められるため、前工程
の粗削り工程とは異なる定盤が要求されるとともに、定
盤回転数或いは砥粒種類等のプロセス条件においても異
なった条件が必要となる。したがって、スライダー加工
工程上、研磨作業に関して粗削り用と仕上げ用の２種類
の定盤が必要となり、装置の数もそれに応じて必要とさ
れていた。[0008] In the slider processing, a good processed surface with extremely few scratches is finally required, so that it is carried out in a plurality of steps of a rough cutting step and a final finishing step. In this final finishing step, Removal of scratches and stabilization of processing quality are required, so a surface plate different from the roughing process of the previous process is required, and different process conditions such as plate rotation speed and abrasive grain type are also required. Becomes Therefore, in the slider processing step, two types of surface plates, one for rough cutting and one for finishing, are required for polishing work, and the number of devices is also required accordingly.
【０００９】この様な問題を解決するために、ウェハに
対する研磨装置ではあるが、一つの定盤内に、内周に粗
削り用、外周に仕上げ用の定盤を兼ね備えた装置が提案
（必要ならば、特開２０００−１７９８２９号公報参
照）されているので、ここで、図６を参照して提案に係
わる研磨装置を説明する。In order to solve such a problem, although it is a polishing apparatus for wafers, an apparatus is proposed in which one surface plate has a surface plate for rough cutting on the inner circumference and a surface plate for finishing on the outer circumference (if necessary). For example, refer to Japanese Patent Laid-Open No. 2000-179829). Here, the proposed polishing apparatus will be described with reference to FIG.
【００１０】図６（ａ）参照
図６（ａ）は、従来の研磨装置の概略的要部斜視図であ
り、定盤４１の内周部に粗削り研磨部４２を、また、外
周部に仕上げ研磨部４３を設けるとともに、粗削り研磨
部４２にはフェノール樹脂からなるベース樹脂にダイヤ
モンド粒子を分散固定した研磨パッド４４を設け、一
方、仕上げ研磨部４３には、ポリウレタンからなる下層
とポリウレタン発泡体からなる上層による２層構造の研
磨パッド４５が貼着されている。FIG. 6A is a schematic perspective view of a conventional polishing apparatus. A rough polishing section 42 is finished on the inner peripheral portion of a surface plate 41 and an outer peripheral portion is finished. The polishing section 43 is provided, and the rough polishing section 42 is provided with a polishing pad 44 in which diamond particles are dispersed and fixed to a base resin made of phenol resin. On the other hand, the finish polishing section 43 is provided with a lower layer made of polyurethane and a polyurethane foam. A polishing pad 45 having a two-layer structure composed of the upper layer is attached.
【００１１】図６（ｂ）参照
図６（ｂ）は、ウェハ保持ヘッド４６の近傍を示す概略
的断面図であり、ウェハ保持ヘッド４６は被研磨ウェハ
５１を貼着した支持基板５２を真空吸着する保持部４
７、真空排気部に接続される空洞部４８からなり、ま
ず、粗削り研磨部４２において粗削り研磨を行ったの
ち、仕上げ研磨部４３における仕上げ研磨を行うもので
ある。FIG. 6B is a schematic cross-sectional view showing the vicinity of the wafer holding head 46, and the wafer holding head 46 vacuum sucks the support substrate 52 to which the wafer 51 to be polished is attached. Holding unit 4
7. The hollow portion 48 is connected to the vacuum exhaust unit. First, the rough polishing unit 42 performs rough polishing, and then the finish polishing unit 43 performs final polishing.
【００１２】なお、粗削り研磨部４２においては、ノズ
ル４９から純水等の潤滑剤５０を供給しつつ研磨を行
い、一方、仕上げ研磨部４３においては、図示しないノ
ズルからスラリーが混合された研磨液を供給しながら研
磨を行う。In the rough grinding polishing section 42, polishing is performed while supplying a lubricant 50 such as pure water from a nozzle 49, while in the final polishing section 43, a polishing liquid in which slurry is mixed from a nozzle not shown. Is supplied while polishing.
【発明が解決しようとする課題】しかし、この様な研磨
装置においては、定盤自体が同一回転数で回るため、粗
削りと仕上げ研磨を同時に加工することが不可能である
という問題があり、この研磨装置をスライダー加工に適
用したとしても生産性という面では従来技術と変わりは
なかった。即ち、通常のスライダー加工においては、粗
削りと仕上げとでは必要とされる定盤回転数が異なるた
めである。However, in such a polishing apparatus, since the surface plate itself rotates at the same number of revolutions, there is a problem that it is impossible to simultaneously perform rough cutting and finish polishing. Even if the polishing device was applied to slider processing, it was no different from the conventional technique in terms of productivity. That is, in ordinary slider processing, the required number of rotations of the surface plate differs between rough cutting and finishing.
【００１３】また、この様な問題を解決するためには、
定盤内周側と外周側では半径位置が異なり内周部の方が
定盤速度が遅くなることを利用して、内周側定盤を仕上
げ研磨に利用する方法も考えられるが、この方法では定
盤速度を半径比で決めることになり制約がつくことで実
際の使用上問題がある。Further, in order to solve such a problem,
It is also possible to use the inner surface side surface plate for finish polishing by utilizing the fact that the inner surface side and outer surface side have different radial positions and the inner surface area has a lower surface plate speed. In that case, the surface plate speed is determined by the radius ratio, and there are restrictions, which poses a problem in actual use.
【００１４】したがって、本発明は、一つの定盤におい
て、任意の異なった条件の研磨を同時に行うことを目的
とする。Therefore, it is an object of the present invention to perform polishing under arbitrary different conditions at the same time on one platen.
【００１５】[0015]
【課題を解決するための手段】図１は本発明の原理的構
成図であり、この図１を参照して本発明における課題を
解決するための手段を説明する。
図１参照
上記目的を達成するため、本発明は、研磨装置におい
て、定盤１の回転と共に被研磨物を取り付けた治具５，
６を前記定盤１の円周方向へ回転運動させて研磨する機
構を設けたことを特徴とする。FIG. 1 is a block diagram showing the principle of the present invention. Means for solving the problems in the present invention will be described with reference to FIG. In order to achieve the above object, the present invention is directed to a polishing apparatus, in which a jig 5, to which an object to be polished is attached, is rotated along with rotation of a surface plate 1.
It is characterized in that a mechanism for rotating and polishing 6 in the circumferential direction of the surface plate 1 is provided.
【００１６】この様に、被研磨物を取り付けた治具５，
６を前記定盤１の円周方向へ回転運動させる機構を設け
ることによって、定盤１に対する相対速度を任意に設定
することができるので、定盤１の回転運動に依存しない
自由な条件での研磨が可能になる。In this way, the jig 5, to which the object to be polished is attached,
By providing a mechanism for rotating 6 in the circumferential direction of the surface plate 1, the relative speed with respect to the surface plate 1 can be arbitrarily set. Polishing becomes possible.
【００１７】また、定盤１に研磨条件が異なる少なくと
も２つの研磨部２，３を設け、少なくとも１つの研磨部
２で、前記定盤１１の回転と共に被研磨物を取り付けた
治具６を前記定盤の円周方向へ回転運動させて研磨する
機構を設けることによって、一つの定盤１において、定
盤１の回転数に規定されない異なった条件における研磨
を同時に行うことができる。なお、被研磨物を取り付け
た治具には、自転機構を設けることが望ましい。Further, at least two polishing parts 2 and 3 having different polishing conditions are provided on the surface plate 1, and at least one polishing part 2 rotates the surface plate 11 and the jig 6 to which an object to be polished is attached. By providing a mechanism for polishing by rotating the platen in the circumferential direction, it is possible to simultaneously perform polishing on one platen 1 under different conditions that are not defined by the number of rotations of the platen 1. In addition, it is desirable to provide a rotation mechanism on the jig to which the object to be polished is attached.
【００１８】この場合の研磨条件が異なる少なくとも２
つの研磨部２，３とは、典型的には、被研磨物に対して
粗削りを行う粗削り研磨部と、被研磨物に対して仕上げ
を行う仕上げ研磨部であり、３つ設ける場合には、粗削
り研磨部、中削り研磨部、及び、仕上げ研磨部となる。In this case, at least two polishing conditions are different.
The two polishing units 2 and 3 are typically a rough polishing unit that performs rough cutting on the object to be polished and a finish polishing unit that finishes the object to be polished. When three units are provided, It serves as a rough polishing section, a medium polishing section, and a final polishing section.
【００１９】この場合、複数の研磨部２，３を分離する
円環状の溝４を設けることが望ましく、それによって、
内周側の研磨部２において用いる潤滑剤或いは研磨剤が
外周部へ進入することを防止することができる。また、
円環状の溝４に溜まった潤滑剤或いは研磨剤を排出する
ために、円環状の溝４に接続する排出口を設けることが
望ましい。In this case, it is desirable to provide an annular groove 4 which separates the plurality of polishing parts 2 and 3 from each other, whereby
It is possible to prevent the lubricant or the abrasive used in the polishing section 2 on the inner peripheral side from entering the outer peripheral section. Also,
In order to discharge the lubricant or the abrasive accumulated in the annular groove 4, it is desirable to provide an outlet connected to the annular groove 4.
【００２０】[0020]
【発明の実施の形態】ここで、図２を参照して、本発明
の第１の実施の形態の研磨装置を説明する。
図２参照
図２は、本発明の第１の実施の形態の研磨装置の概略的
断面図であり、ステンレス製の底盤１２上に錫層１３を
設けた定盤１１に円環状の溝１４を設け、内周部を粗削
り用研磨部１５とし、外周部を仕上げ用研磨部１６とす
る。この定盤１１は回転モータ１８を介して自転自在に
ステージ１９に固定される。BEST MODE FOR CARRYING OUT THE INVENTION Now, a polishing apparatus according to a first embodiment of the present invention will be described with reference to FIG. See FIG. 2. FIG. 2 is a schematic cross-sectional view of the polishing apparatus according to the first embodiment of the present invention, in which an annular groove 14 is provided on a surface plate 11 having a tin layer 13 provided on a stainless steel bottom plate 12. The inner peripheral portion is used as the rough grinding polishing portion 15, and the outer peripheral portion is used as the finishing polishing portion 16. The surface plate 11 is fixed to a stage 19 via a rotary motor 18 so as to be rotatable.
【００２１】この定盤１１による研磨の事前準備とし
て、粗削り用研磨部１５と仕上げ用研磨部１６とで異な
るフェーシング作業を行った後に、ダイヤモンド砥粒埋
め込みであるチャージング作業を行う。この時にもそれ
ぞれ別々の条件（回転数，スラリー種類等）でチャージ
ング作業を行うことになるが、この定盤１１では同時に
作業が行えるために、研磨装置のメンテナンス時間とし
ては効率が良い。因に、一般のチャージング作業には１
〜２時間を要する場合がある。As a preliminary preparation for polishing by the surface plate 11, after performing different facing operations for the rough cutting polishing section 15 and the finishing polishing section 16, a charging operation for embedding diamond abrasive grains is performed. Even at this time, the charging work is performed under different conditions (rotation speed, slurry type, etc.), but since the work can be performed simultaneously on the platen 11, the polishing apparatus is efficient in maintenance time. By the way, 1 for general charging work
It may take ~ 2 hours.
【００２２】この場合、粗削り用表面と仕上げ用表面で
は、フェーシング時のバイト種類或いはバイト送り速度
を変えることで表面粗さを変えており、使用するスラリ
ーも砥粒の径を仕上げ用は粗削り用よりも小さくするこ
とで、仕上げ研磨を行えるようにしている。なお、磁気
ヘッドスライダーバーの研磨工程においては、粗削り工
程では遊離砥粒方式、仕上げ工程では、上述のように研
磨部の表面にダイヤモンド粒子を埋め込んだ埋め込み砥
粒方式を使うことが多い。In this case, the surface roughness of the roughing surface and the finishing surface is changed by changing the bite type or the bite feeding speed during the facing, and the slurry to be used has the diameter of the abrasive grains for finishing. By making it smaller than that, it is possible to perform finish polishing. In the polishing step of the magnetic head slider bar, a loose abrasive method is often used in the rough cutting step, and an embedded abrasive method in which diamond particles are embedded in the surface of the polishing portion is often used in the finishing step.
【００２３】この円環状の溝１４は、それぞれのスラリ
ーや研磨液及び削りかすの排出のために設けたものであ
り、溝１４内に内周部で行う粗削り研磨で発生するスラ
リー液等が入り込み、溝に１４に通じる排出口（図示を
省略）を通じて定盤１１の下部を通じて排出される。一
方、外周部の仕上げ研磨で発生する研磨液等はそのま
ま、外周部縁より外部に排出される。The circular groove 14 is provided to discharge the respective slurry, polishing liquid and shavings, and the slurry liquid generated by the rough polishing performed in the inner peripheral portion enters the groove 14. , Is discharged through the lower portion of the surface plate 11 through a discharge port (not shown) communicating with the groove 14. On the other hand, the polishing liquid or the like generated in the final polishing of the outer peripheral portion is discharged as it is from the outer peripheral edge.
【００２４】この様なフェーシング作業及びチャージン
グ作業の準備作業が終了した定盤１１を用いて研磨を行
う場合には、定盤１１の表面を内周部から外周部へと移
動して粗削り工程と仕上げ工程とを順次行うことにな
る。When polishing is performed using the surface plate 11 on which the preparation work for the facing work and the charging work is completed, the surface of the surface plate 11 is moved from the inner peripheral portion to the outer peripheral portion to perform a rough cutting process. And the finishing process are sequentially performed.
【００２５】その際、粗削り用にはスライダーバー２０
をラップ治具ユニット２１に取り付けて内周側の粗削り
用研磨部１５上に取り付けた駆動用装置２２にセットす
る。一方、仕上げ用についても同様にスライダーバー２
０をラップ治具ユニット２３に取り付けて定盤１１の外
周の仕上げ用研磨部１６の上部に取り付けた固定装置２
４にセットする。At that time, a slider bar 20 is used for rough cutting.
Is set on the lapping jig unit 21 and set on the driving device 22 mounted on the rough cutting polishing portion 15 on the inner peripheral side. On the other hand, the slider bar 2 is also used for finishing.
Fixing device 2 in which 0 is attached to the lapping jig unit 23 and is attached to the upper part of the polishing portion 16 for finishing on the outer periphery of the surface plate 11.
Set to 4.
【００２６】この場合、定盤速度については仕上げ用で
使用している回転数、例えば、５ｒｐｍに設定し、粗削
り用については、ラップレート上げるために定盤回転数
を大きく、例えば、２０ｒｐｍに設定する必要があるた
め、粗削り用のラップ治具ユニット２１を駆動用装置２
２によって定盤回転とは逆方向に回転運動をさせて、そ
の相対回転速度を２０ｒｐｍに設定する。In this case, the speed of the surface plate is set to the rotation speed used for finishing, for example, 5 rpm, and for the rough cutting, the rotation speed of the surface plate is set large to increase the lap rate, for example, 20 rpm. Therefore, the lap jig unit 21 for rough cutting is installed in the driving device 2
The rotary motion is performed in the opposite direction to the rotation of the surface plate by 2 and the relative rotation speed is set to 20 rpm.
【００２７】即ち、粗削り用のラップ治具ユニット２１
を定盤回転とは逆方向に１５ｒｐｍとなる様に回転運動
させることによって、定盤回転数の５ｒｐｍが加わっ
て、相対的に定盤表面に対して２０ｒｐｍの回転数をも
って運動することとなる。That is, the lapping jig unit 21 for rough cutting
Is rotated in the direction opposite to the rotation of the surface plate at a rotation speed of 15 rpm, so that the rotation speed of the surface plate of 5 rpm is added, and the surface of the surface plate is relatively rotated at a rotation speed of 20 rpm.
【００２８】なお、研磨ワークに対して二つの駆動系で
運動して研磨することになるが、ワーク自身は治具等の
重力荷重のみを受けて研磨されるので定盤面に対しては
平行にラップさせることになり、特にラップ精度が悪化
するわけではない。It should be noted that the polishing work is moved by two driving systems to perform polishing, but since the work itself is only subjected to the gravity load of a jig or the like and is polished, it is parallel to the surface plate surface. The wrapping is performed, and the lap accuracy is not particularly deteriorated.
【００２９】この様に、同時に粗削り研磨と仕上げ研磨
を行う場合、それぞれに好適な研磨条件による時間で研
磨することができる。また、先に仕上げ用研磨が終了す
れば、仕上げ研磨用のラップ治具ユニット２３のみ、上
方向に上げてアンロードすれば良く、粗削り研磨が終わ
った時点で、仕上げ用のラップ治具ユニット２３及び粗
削り用のラップ治具ユニット２１を外し、スライダーバ
ー２０を取り外して加工を終了させることになる。As described above, when the rough cutting polishing and the finish polishing are simultaneously performed, the polishing can be performed for a time under the respective suitable polishing conditions. Further, if finishing polishing is finished first, only the lapping jig unit 23 for finishing polishing may be lifted up and unloaded. When the rough polishing is finished, the lapping jig unit 23 for finishing is finished. Also, the lapping jig unit 21 for rough cutting is removed, the slider bar 20 is removed, and the processing is finished.
【００３０】次に、図３を参照して、本発明の第２の実
施の形態の研磨装置を説明する。
図３参照
図３は、本発明の第２の実施の形態の研磨装置の概略的
断面図であり、基本的構成は上記の第１の実施の形態と
同様であるので説明は省略するが、この第２の実施の形
態においては、ラップ治具ユニットとして自転機構を設
けた仕上げ用ラップ治具ユニット２６及び粗削り用のラ
ップ治具ユニット２５を用いた物である。Next, a polishing apparatus according to a second embodiment of the present invention will be described with reference to FIG. See FIG. 3. FIG. 3 is a schematic cross-sectional view of a polishing apparatus according to a second embodiment of the present invention, and since the basic configuration is the same as that of the above-described first embodiment, description thereof will be omitted. In the second embodiment, a finishing lap jig unit 26 provided with a rotation mechanism and a lap jig unit 25 for rough cutting are used as the lap jig units.
【００３１】この本発明の第２の実施の形態において
は、定盤１１の回転及び駆動用装置２２による回転に加
えてラップ治具ユニット２５，２６の自転運動も合わせ
て研磨するので、研磨条件をより自由度を持って設定す
ることができる。In the second embodiment of the present invention, in addition to the rotation of the surface plate 11 and the rotation by the drive unit 22, the rotation of the lapping jig units 25 and 26 is also polished, so that the polishing conditions are Can be set with more freedom.
【００３２】次に、図４を参照して、本発明の第３の実
施の形態の研磨装置を説明する。
図４参照
図４は、本発明の第３の実施の形態の研磨装置の概略的
断面図であり、基本的構成は上記の第１の実施の形態と
同様であるので説明は省略するが、この第３の実施の形
態においては、自転自在の粗削り用のラップ治具ユニッ
ト２５と自転自在の粗削り用のラップ治具ユニット２６
の双方に定盤の回転方向と同じ方向に回転させる駆動用
装置２７，２８を設けたものである。Next, a polishing apparatus according to a third embodiment of the present invention will be described with reference to FIG. Refer to FIG. 4. FIG. 4 is a schematic cross-sectional view of a polishing apparatus according to a third embodiment of the present invention, and since the basic structure is the same as that of the above-mentioned first embodiment, description thereof will be omitted. In the third embodiment, a lap jig unit 25 for free-running rough cutting and a lap jig unit 26 for free-running rough cutting are provided.
Both of them are provided with drive devices 27 and 28 for rotating in the same direction as the rotation direction of the surface plate.
【００３３】この第３の実施の形態においては、粗削り
用のラップ治具ユニット２５と粗削り用のラップ治具ユ
ニット２６の双方に駆動用装置２７，２８を設けている
ので、研磨中に定盤回転数を変えるようなシーケンスを
取ることができ、より自由度の高い研磨が可能になる。In the third embodiment, since the drive devices 27 and 28 are provided in both the lapping jig unit 25 for rough cutting and the lapping jig unit 26 for rough cutting, a surface plate is used during polishing. A sequence that changes the number of rotations can be taken, and polishing with a higher degree of freedom becomes possible.
【００３４】次に、図５を参照して、本発明の第４の実
施の形態の研磨装置を説明する。
図５参照
図５は、本発明の第４の実施の形態の研磨装置の概略的
断面図であり、ステンレス製の底盤３２上に錫層３３を
設けた定盤３１を回転モータ３４を介して自転自在にス
テージ３５に固定するとともに、スライダーバー３６を
取り付けるラップ治具ユニット３７に定盤３１の回転方
向と反対方向或いは同方向に回転運動させる駆動用装置
３８を取り付けたものである。Next, a polishing apparatus according to a fourth embodiment of the present invention will be described with reference to FIG. See FIG. 5. FIG. 5 is a schematic cross-sectional view of a polishing apparatus according to a fourth embodiment of the present invention, in which a surface plate 31 having a tin layer 33 provided on a stainless steel bottom plate 32 is mounted via a rotary motor 34. In addition to being fixed to the stage 35 rotatably, a driving device 38 for rotating the lap jig unit 37 to which the slider bar 36 is attached in a direction opposite or the same as the rotation direction of the surface plate 31 is attached.
【００３５】この第４の実施の形態においても、研磨中
に定盤回転数を変えるようなシーケンスを取ることがで
き、より自由度の高い研磨が可能になる。Also in the fourth embodiment, a sequence in which the number of rotations of the platen is changed during polishing can be taken, and polishing with a higher degree of freedom becomes possible.
【００３６】以上、本発明の各実施の形態を説明した
が、本発明は各実施の形態に記載した構成及び条件に限
られるものではなく、各種の変更が可能である。例え
ば、上記の第１乃至第３の実施の形態においては、内周
側を粗削り部、外周側を仕上げ部としているが、逆に内
周側を仕上げ部、外周側を粗削り部としても良いことは
言うまでもない。Although the respective embodiments of the present invention have been described above, the present invention is not limited to the configurations and conditions described in the respective embodiments, and various modifications can be made. For example, in the above-described first to third embodiments, the inner peripheral side is the rough cut portion and the outer peripheral side is the finish portion, but conversely, the inner peripheral side may be the finish portion and the outer peripheral side may be the rough cut portion. Needless to say.
【００３７】また、上記の第１乃至第３の実施の形態に
おいては、定盤回転数を仕上げ用の低速に設定している
が、逆に定盤回転数を粗削り用の高速に設定し、仕上げ
用で速度制御を、即ち、仕上げ用のラップ治具ユニット
を定盤の回転方向と同方向に回転させて速度制御を行っ
ても良いものである。Further, in the above-mentioned first to third embodiments, the platen rotation speed is set to a low speed for finishing, but conversely, the platen rotation speed is set to a high speed for rough cutting, Speed control may be performed for finishing, that is, speed control may be performed by rotating the lapping jig unit for finishing in the same direction as the rotation direction of the surface plate.
【００３８】また、上記の第１乃至第３の実施の形態に
おいては、定盤を仕上げ用研磨部と粗削り用研磨部に二
分割しているが、二分割に限られるものではなく、同心
円的に３分割等の多数分割しても良いものであり、例え
ば、３分割する場合には、粗削り用研磨部、中削り用研
磨部、及び、仕上げ用研磨部とし、夫々の研磨部を円環
状の溝で分離すれば良い。Further, in the above-mentioned first to third embodiments, the surface plate is divided into the polishing section for finishing and the polishing section for rough cutting, but the invention is not limited to the two divisions, and it is concentric. It is also possible to divide into a large number of parts such as 3 parts. For example, in the case of dividing into 3 parts, a rough cutting polishing part, a medium cutting polishing part, and a finishing polishing part, and each polishing part is annular. It may be separated by the groove of.
【００３９】また、上記の第１乃至第３の実施の形態に
おいては、仕上げ用研磨部と粗削り用研磨部とを円環状
の溝で分離しているが、この様な溝は必ずしも必須のも
のではない。Further, in the above-mentioned first to third embodiments, the finishing polishing portion and the rough cutting polishing portion are separated by the annular groove, but such a groove is not essential. is not.
【００４０】また、上記の各実施の形態においては、磁
気ヘッド素子を形成したスライダーバーの研磨加工を前
提として説明しているため、定盤の表面を錫層としてい
るが、本発明は、スライダーバーの研磨加工に限られる
ものではなく、半導体装置の研磨工程等の各種の研磨工
程に適用されるものである。その場合、上述の従来例の
様に定盤上に研磨用パッドを設け、この研磨用パッドの
粗さ等を選択して、異なった研磨面を構成してもよいも
のである。Further, in each of the above-described embodiments, since the slider bar having the magnetic head element formed thereon is polished, the surface of the surface plate is made of a tin layer. However, the present invention is not limited to the slider. The present invention is not limited to the bar polishing process, but is applied to various polishing processes such as a semiconductor device polishing process. In that case, different polishing surfaces may be formed by providing a polishing pad on the surface plate as in the above-mentioned conventional example, and selecting the roughness and the like of this polishing pad.
【００４１】ここで、再び図１を参照して、改めて本発
明の詳細な特徴を説明する。再び、図１参照
（付記１） 定盤１の回転と共に被研磨物を取り付けた
治具５，６を前記定盤１の円周方向へ回転運動させて研
磨する機構を設けたことを特徴とする研磨装置。
（付記２） 定盤１に研磨条件が異なる少なくとも２つ
の研磨部２，３を設け、少なくとも１つの研磨部２で、
前記定盤１の回転と共に被研磨物を取り付けた治具６を
前記定盤１の円周方向へ回転運動させて研磨する機構を
設けたことを特徴とする研磨装置。
（付記３） 上記複数の研磨部２，３が、円環状の溝４
で分離されていることを特徴とする付記２記載の研磨装
置。
（付記４） 上記円環状の溝４に、研磨液を排出する排
出口が接続されていることを特徴とする付記３記載の研
磨装置。
（付記５） 上記複数の研磨部２，３の内、一つが被研
磨物に対して粗削りを行う粗削り研磨部であり、その他
の内の一つが被研磨物に対して仕上げを行う仕上げ研磨
部であることを特徴とする付記２乃至４のいずれか１に
記載の研磨装置。
（付記６） 上記被研磨物を取り付けた治具５，６に、
自転機構を設けたことを特徴とする付記１乃至５のいず
れか１に記載の研磨装置。
（付記７） 付記１乃至６のいずれか１に記載の研磨装
置を用いて被研磨物を研磨することを特徴とする研磨方
法。
（付記８） 上記被研磨物が、複数の薄膜磁気ヘッド素
子を設けたスライダーバーであることを特徴とする付記
７記載の研磨方法。Here, referring again to FIG. 1, the detailed features of the present invention will be described again. Referring again to FIG. 1 (Appendix 1), a mechanism for polishing by rotating the platen 1 and rotating the jigs 5 and 6 to which the object to be polished is attached in the circumferential direction of the platen 1 is provided. Polishing equipment. (Supplementary Note 2) At least two polishing sections 2 and 3 having different polishing conditions are provided on the surface plate 1, and at least one polishing section 2 includes
A polishing apparatus provided with a mechanism for rotating the surface plate 1 and rotating a jig 6 to which an object to be polished is attached in a circumferential direction of the surface plate 1 for polishing. (Supplementary Note 3) The plurality of polishing parts 2 and 3 are formed into an annular groove 4.
The polishing apparatus according to appendix 2, wherein the polishing apparatus is separated by. (Supplementary Note 4) The polishing apparatus according to Supplementary Note 3, wherein an outlet for discharging the polishing liquid is connected to the annular groove 4. (Supplementary Note 5) Of the plurality of polishing sections 2 and 3, one is a roughing polishing section that performs rough cutting on an object to be polished, and the other one is a finishing polishing section that finishes on the object to be polished. 5. The polishing apparatus according to any one of appendices 2 to 4, characterized in that (Supplementary note 6) The jigs 5 and 6 to which the above-mentioned object to be polished is attached,
6. The polishing apparatus according to any one of appendices 1 to 5, further comprising a rotation mechanism. (Supplementary Note 7) A polishing method for polishing an object to be polished using the polishing apparatus according to any one of Supplementary Notes 1 to 6. (Supplementary Note 8) The polishing method according to Supplementary Note 7, wherein the object to be polished is a slider bar provided with a plurality of thin film magnetic head elements.
【００４２】[0042]
【発明の効果】本発明によれば、研磨を行うラップ治具
ユニットに定盤の回転方向と逆方向或いは同方向に回転
する駆動用機構を設けているので、研磨工程の自由度を
増すことができ、特に、一枚の定盤に粗削り・仕上げ研
磨部を設けた場合に、粗削り・仕上げ研磨部の両方にお
いての同時加工が可能となるため、研磨装置台数の削
減、加工時間の短縮によって生産性の向上に寄与するこ
とができ、磁気ヘッド及び磁気記録装置の低コスト化に
寄与するところが大きい。According to the present invention, since the lapping jig unit for polishing is provided with the driving mechanism for rotating in the opposite direction or the same direction as the rotating direction of the surface plate, the flexibility of the polishing process can be increased. In particular, when the roughing / finishing polishing section is provided on one surface plate, it is possible to perform simultaneous processing in both the roughing / finishing polishing section, reducing the number of polishing equipment and shortening the processing time. It is possible to contribute to the improvement of productivity and to contribute to the cost reduction of the magnetic head and the magnetic recording device.
【図１】本発明の原理的構成の説明図である。FIG. 1 is an explanatory diagram of a principle configuration of the present invention.
【図２】本発明の第１の実施の形態の研磨装置の概略的
構成図である。FIG. 2 is a schematic configuration diagram of a polishing apparatus according to a first embodiment of the present invention.
【図３】本発明の第２の実施の形態の研磨装置の概略的
構成図である。FIG. 3 is a schematic configuration diagram of a polishing apparatus according to a second embodiment of the present invention.
【図４】本発明の第３の実施の形態の研磨装置の概略的
構成図である。FIG. 4 is a schematic configuration diagram of a polishing apparatus according to a third embodiment of the present invention.
【図５】本発明の第４の実施の形態の研磨装置の概略的
構成図である。FIG. 5 is a schematic configuration diagram of a polishing apparatus according to a fourth embodiment of the present invention.
【図６】従来の研磨装置の概略的構成図である。FIG. 6 is a schematic configuration diagram of a conventional polishing apparatus.
１ 定盤 ２ 研磨部 ３ 研磨部 ４ 円環状の溝 ５ 治具 ６ 治具 １１ 定盤 １２ 底盤 １３ 錫層 １４ 溝 １５ 粗削り用研磨部 １６ 仕上げ用研磨部 １８ 回転モータ １９ ステージ ２０ スライダーバー ２１ ラップ治具ユニット ２２ 駆動用装置 ２３ ラップ治具ユニット ２４ 固定装置 ２５ ラップ治具ユニット ２６ ラップ治具ユニット ２７ 駆動用装置 ２８ 駆動用装置 ３１ 定盤 ３２ 底盤 ３３ 錫層 ３４ 回転モータ ３５ ステージ ３６ スライダーバー ３７ ラップ治具ユニット ３８ 駆動用装置 ４１ 定盤 ４２ 粗削り研磨部 ４３ 仕上げ研磨部 ４４ 研磨パッド ４５ 研磨パッド ４６ ウェハ保持ヘッド ４７ 保持部 ４８ 空洞部 ４９ ノズル ５０ 潤滑剤 ５１ 被研磨ウェハ ５２ 支持基板 1 surface plate 2 Polishing section 3 Polishing part 4 annular groove 5 jigs 6 jigs 11 surface plate 12 Bottom 13 Tin layer 14 groove 15 Roughing polishing section 16 Polishing part for finishing 18 rotation motor 19 stages 20 slider bar 21 Lap jig unit 22 Drive device 23 Lapping jig unit 24 Fixing device 25 Lap jig unit 26 Lapping jig unit 27 Drive device 28 Drive device 31 surface plate 32 Bottom 33 Tin layer 34 rotary motor 35 stages 36 Slider bar 37 Lapping jig unit 38 Drive device 41 surface plate 42 Roughing and polishing section 43 Finishing polishing section 44 polishing pad 45 polishing pad 46 Wafer holding head 47 holding part 48 cavity 49 nozzles 50 Lubricants 51 Wafer to be polished 52 Support substrate
───────────────────────────────────────────────────── フロントページの続き Ｆターム(参考） 3C058 AA07 AA09 AB01 AB06 CB03 CB04 CB07 DA09 DA16 ─────────────────────────────────────────────────── ─── Continued front page F-term (reference) 3C058 AA07 AA09 AB01 AB06 CB03 CB04 CB07 DA09 DA16
Claims (5)
治具を前記定盤の円周方向へ回転運動させて研磨する機
構を設けたことを特徴とする研磨装置。1. A polishing apparatus provided with a mechanism for rotating a platen and rotating a jig to which an object to be polished is attached in a circumferential direction of the platen for polishing.
の研磨部を設け、少なくとも１つの研磨部で、前記定盤
の回転と共に被研磨物を取り付けた治具を前記定盤の円
周方向へ回転運動させて研磨する機構を設けたことを特
徴とする研磨装置。2. A surface plate is provided with at least two polishing parts having different polishing conditions, and a jig having an object to be polished attached thereto is rotated in the circumferential direction of the surface plate with at least one polishing part. A polishing apparatus provided with a mechanism for rotating and polishing.
されていることを特徴とする請求項２記載の研磨装置。3. The polishing apparatus according to claim 2, wherein the plurality of polishing portions are separated by an annular groove.
機構を設けたことを特徴とする請求項１乃至３のいずれ
か１項に記載の研磨装置。4. The polishing apparatus according to claim 1, wherein the jig to which the object to be polished is attached is provided with a rotation mechanism.
研磨装置を用いて被研磨物を研磨することを特徴とする
研磨方法。5. A polishing method for polishing an object to be polished by using the polishing apparatus according to claim 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002109929A JP2003305638A (en) | 2002-04-12 | 2002-04-12 | Polishing device and polishing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002109929A JP2003305638A (en) | 2002-04-12 | 2002-04-12 | Polishing device and polishing method |
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| Publication Number | Publication Date |
|---|---|
| JP2003305638A true JP2003305638A (en) | 2003-10-28 |
Family
ID=29393214
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006075527A1 (en) * | 2005-01-12 | 2006-07-20 | Sumitomo Electric Industries, Ltd. | METHOD FOR ABRASING GaN SUBSTRATE |
| WO2007032517A1 (en) * | 2005-09-14 | 2007-03-22 | Ebara Corporation | Polishing platen and polishing apparatus |
| JP2009105440A (en) * | 2009-02-04 | 2009-05-14 | Sumitomo Electric Ind Ltd | METHOD FOR POLISHING GaN SUBSTRATE |
| US9017146B2 (en) | 2012-12-04 | 2015-04-28 | Fujikoshi Machinery Corp. | Wafer polishing apparatus |
-
2002
- 2002-04-12 JP JP2002109929A patent/JP2003305638A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006075527A1 (en) * | 2005-01-12 | 2006-07-20 | Sumitomo Electric Industries, Ltd. | METHOD FOR ABRASING GaN SUBSTRATE |
| JP2006196609A (en) * | 2005-01-12 | 2006-07-27 | Sumitomo Electric Ind Ltd | POLISHING METHOD OF GaN SUBSTRATE |
| CN100421224C (en) * | 2005-01-12 | 2008-09-24 | 住友电气工业株式会社 | Method for grinding GaN substrate |
| US7452814B2 (en) | 2005-01-12 | 2008-11-18 | Sumitomo Electric Industries, Ltd. | Method of polishing GaN substrate |
| WO2007032517A1 (en) * | 2005-09-14 | 2007-03-22 | Ebara Corporation | Polishing platen and polishing apparatus |
| JP2009105440A (en) * | 2009-02-04 | 2009-05-14 | Sumitomo Electric Ind Ltd | METHOD FOR POLISHING GaN SUBSTRATE |
| US9017146B2 (en) | 2012-12-04 | 2015-04-28 | Fujikoshi Machinery Corp. | Wafer polishing apparatus |
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