JP2003303561A - Spacer, method of manufacturing spacer, and electron beam device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To prevent the separation of an antistatic film from a surface of a spacer in a heating process. <P>SOLUTION: A side face 2 of a spacer base 7 has a first region 3 and a second region recessed by a depth h with respect to the first region 3, and a first irregurality 5 is formed by the first region 3 and the second region 4. Surfaces of the first region 3 and the second region 4 are respectively treated, whereby the second irregurality 6 of fine recessed and projecting shape is formed. The antistatic films are formed on the first region 3 and the second region 4, and a sheet resistance value of the antistatic film formed on the first region 4 is higher than that of the antistatic film formed on the second region 4. <P>COPYRIGHT: (C)2004,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electron beam apparatus and a spacer applied to an image forming apparatus such as a display apparatus which is an application thereof, a method for manufacturing the spacer, and an electron beam apparatus.

[0002]

2. Description of the Related Art Conventionally, two types of electron-emitting devices, known as a hot cathode device and a cold cathode device, are known. Among them, as the cold cathode device, for example, a surface conduction type emission device, a field emission type device (hereinafter referred to as FE type), a metal / insulating layer / metal type emission device (hereinafter referred to as MIM type), etc. are known. There is.

As the surface conduction electron-emitting device, for example,
M. I. Elinson, Radio Eng. Ele
ctron Phys. , 10, 1290, (196
5) and other examples described later are known.

The surface conduction electron-emitting device utilizes a phenomenon in which electron emission occurs when a current is passed through a thin film having a small area formed on a substrate in parallel with the film surface. As this surface conduction type emission device, SnO ₂ by Erinson et al.
In addition to the one using a thin film, the one using an Au thin film [G. D
ittmer: "Thin Solid Film
s ", 9, 317 (1972)], In ₂ O ₃ / SnO
₂ Thin film [M. Hartwell and
C. G. Fonstad: "IEEE Trans.E
D Conf. , 519 (1975)] and carbon thin films [Hiraki Araki et al .: Vacuum, Vol. 26, No. 1]
No., 22 (1983)] and the like.

As a typical example of the element structure of these surface conduction electron-emitting devices, FIG. Hartwell
FIG. The surface conduction electron-emitting device emits electrons formed on a part of the conductive thin film 3004 and a conductive thin film 3004 made of a metal oxide formed by a pair of sputters on an insulating substrate 3001. And an electron emitting portion 3005. The conductive thin film 3004 is formed in an H-shaped plane shape as illustrated. The conductive thin film 3004 is subjected to an energization process called energization forming described later to form an electron emitting portion 3005. The interval L in the figure is 0.5 to 1 [mm], and the width W is
It is set at 0.1 [mm]. For convenience of illustration, the electron-emitting portion 3005 is shown as a rectangular shape in the center of the conductive thin film 3004, but this is a schematic one and faithfully represents the actual position and shape of the electron-emitting portion. It doesn't mean that.

M. In the above-mentioned surface conduction electron-emitting device including the device by Hartwell et al., The electron-emitting portion 3005 is formed by performing an energization process called energization forming on the conductive thin film 3004 before the electron emission.
Was commonly formed. That is, the energization forming is performed by applying a constant DC voltage or a DC voltage boosting at a very slow rate of, for example, about 1 [V / min] to both ends of the conductive thin film 3004,
The conductive thin film 3004 is locally destroyed, deformed, or altered so that the electron emitting portion 30 is in an electrically high resistance state.
05 is to be formed. Note that a crack is generated in a part of the conductive thin film 3004 which is locally destroyed, deformed or altered. When an appropriate voltage is applied to the conductive thin film 3004 after energization forming, electrons are emitted near the crack.

An example of the FE type is disclosed in W. P.
Dyke & W. W. Dolan, "Field Emi
ssion ”, Advance in Electro
nPhysics, 8, 89 (1956) or C.I. A. Spindt, "Physical p
properties of thin-film fi
eld emission cathodes wit
h molbdenium cones ”, J. Ap.
pl. Phys. , 47, 5248 (1976) and the like are known.

As a typical example of the FE type element structure, FIG. A. 3 shows a cross-sectional view of the device by Spindt et al. An emitter wiring 3011 and a gate electrode 3014 made of a conductive material are stacked on a substrate 3010 with an insulating layer 3013 interposed therebetween.
An emitter cone 3012 that causes field emission is formed therebetween. In this element, an appropriate voltage is applied between the emitter cone 3012 and the gate electrode 3014 to cause field emission from the tip of the emitter cone 3012.

As another FE type element structure, FIG.
There is also an example in which the emitter and the gate electrode are arranged on the substrate substantially in parallel with the substrate plane, instead of the laminated structure as in 1.

As an example of the MIM type, for example,
C. A. Mead, "Operation of tun
nel-emission Devices, J. Ap
pl. Phys. , 32,646 (1961) and the like are known. FIG. 12 shows a side cross section of a typical example of the MIM type device configuration. On the substrate 3020, a lower electrode 3021 made of metal, a thin insulating layer 3022 having a thickness of about 100Å,
Upper electrode 3023 made of metal with a thickness of about 80 to 300 Å
Are sequentially laminated. In the MIM type,
Electrons are emitted from the surface of the upper electrode 3023 by applying an appropriate voltage between the upper electrode 3023 and the lower electrode 3021.

The cold cathode device described above does not require a heater for heating because it can obtain electron emission at a lower temperature than the hot cathode device. Therefore, the structure is simpler than that of the hot cathode device, and a fine device can be manufactured. Even if a large number of elements are arranged on the substrate with high density, problems such as heat melting of the substrate are unlikely to occur. In addition, the response speed is slow because the hot cathode element operates by heating the heater, and the cold cathode element also has an advantage that the response speed is fast.

Therefore, researches for applying the cold cathode device have been actively conducted.

For example, the surface conduction electron-emitting device has an advantage that a large number of devices can be formed over a large area because it has a particularly simple structure and is easy to manufacture among cold cathode devices. Therefore, for example, JP-A-64-31 by the present applicant
As disclosed in Japanese Patent No. 332, a method for arranging and driving a large number of elements has been studied. Also,
Regarding the application of the surface conduction electron-emitting device, for example, image forming devices such as image display devices and image recording devices, charged beam sources, and the like have been studied.

Particularly, as an application to an image display device, for example, US Pat. No. 5,066,8 by the applicant of the present invention is used.
83, JP-A-2-257551, and JP-A-4-4-2.
As disclosed in Japanese Patent No. 8137, an image display device using a combination of a surface conduction electron-emitting device and a phosphor that emits light when irradiated with an electron beam has been studied. An image display device using a combination of a surface conduction electron-emitting device and a phosphor is expected to have better characteristics than other conventional image display devices. For example, it can be said that it is superior in that it does not require a backlight because it is a self-luminous type and has a wide viewing angle, even compared with a liquid crystal display device that has become widespread in recent years.

A method for driving a large number of FE types is described in, for example, US Pat.
No. 04,895. Further, as an example in which the FE type is applied to an image display device, for example, R.I. Meye
A flat panel display device reported by R. R. et al. is known [R. Meyer: "Recent Developpm
ent on Micro-tips Display
at LETI ", Tech. Digest of
4th Int. Vacuum Microele-
ctronics Conf. , Nagahama, p
p. 6-9 (1991)].

An example in which a large number of MIM types are arranged and applied to an image display device is disclosed in, for example, Japanese Patent Application Laid-Open No.
It is disclosed in Japanese Patent No. 55738.

Among the image forming apparatuses using the electron-emitting devices as described above, the flat-panel display device having a small depth is space-saving and lightweight, and thus is attracting attention as a replacement for the cathode ray tube display device. .

FIG. 13 is a perspective view showing an example of a display panel portion which constitutes a flat image display device, and a part of the panel is cut away to show the internal structure. Rear plate 3115, side wall 3116, and rear plate 311
Face plate 3117 arranged so as to face No. 5
Thus, an airtight container for maintaining a vacuum inside the display panel is formed.

A substrate 3111 is fixed to the rear plate 3115, and N × M cold cathode elements 3112 are formed on the substrate 3111. (N and M are positive integers of 2 or more and are appropriately set according to the target number of display pixels.) Also, N × M cold cathode elements 3112.
Are wired by M row-direction wirings 3113 and N column-direction wirings 3114, as shown in FIG. A portion composed of the substrate 3111, the cold cathode device 3112, the row-direction wiring (upper wiring) 3113, and the column-direction wiring (lower wiring) 3114 is called a multi-electron beam source. In addition, an insulating layer (not shown) is formed between the row-direction wirings 3113 and the column-direction wirings 3114 at least at the intersecting portions, so that electrical insulation is maintained.

A phosphor film 3118 made of a phosphor is formed on the lower surface of the face plate 3117, and a phosphor (not shown) of three primary colors of red (R), green (G) and nurturing (B) is applied. It is divided. A black body (not shown) is provided between the phosphors of the respective colors forming the phosphor film 3118, and a metal back 3119 made of Al or the like is formed on the rear plate 3115 side surface of the phosphor film 3118. ing.

Dx1 to Dxm and Dy1 to Dyn and Hv are electric connection terminals of an airtight structure provided for electrically connecting the display panel and an electric circuit (not shown). Dx1 to Dxm are electrically connected to the row-directional wiring 3113 of the multi-electron beam source, Dy1 to Dyn are electrically connected to the column-directional wiring 3114 of the multi-electron beam source, and Hv is electrically connected to the metal back 3119.

The inside of the airtight container is 1.3 × 10.
A means for preventing the deformation or breakage of the rear plate 3115 and the face plate 3117 due to the pressure difference between the inside and the outside of the airtight container as the display area of the image display device is increased by being held in a vacuum of about ^-4 [Pa]. Is required. The method of thickening the rear plate 3115 and the face plate 3116 not only increases the weight of the image display device but also causes image distortion and parallax when viewed from an oblique direction. On the other hand, FIG.
In the above, a structural support (called a spacer or a rib) 3120 which is made of a relatively thin glass plate and supports atmospheric pressure is provided. In this way, the substrate 3111 on which the multi-beam electron source is formed and the fluorescent film 31.
The space between the face plates 3116 on which the 18 are formed is normally maintained at a sub-millimeter to several millimeters, and as described above, the inside of the airtight container is kept at a high vacuum.

In the image display device using the display panel described above, when a voltage is applied to each cold cathode element 3112 through the terminals Dx1 to Dxm and Dy1 to Dyn outside the container, electrons are emitted from each cold cathode element 3112. At the same time, a high voltage of several hundred [V] to several [kV] is applied to the metal back 3119 through the external terminal Hv to accelerate the emitted electrons and collide with the inner surface of the face plate 3117. As a result, the phosphors of each color forming the phosphor film 3118 are excited and emit light, and an image is displayed.

[0024]

However, in the display panel of the conventional image display device, some of the electrons emitted from the vicinity of the spacer hit the spacer or ions ionized by the action of the emitted electrons are generated. Adhesion to the spacer may cause spacer charging. Electrons emitted from the cold cathode element due to the charging of the spacer may have their orbits bent, reach a position different from the regular position on the phosphor, and the image near the spacer may be distorted and displayed. . In order to solve this problem, US Pat. No. 5,760,538 discloses a method of forming a high resistance film on the surface of a spacer and removing a charge by allowing a minute current to flow. In addition, JP-A-8-180821 and JP-A-10-180821.
There is also a method in which the spacer end face is covered with a material having a lower sheet resistance than the high resistance film, as in Japanese Patent Publication No. 144203. Although details of the causes of these chargings have not been clarified, the capacitance and resistance of the spacer can be effectively increased, or the reflected electrons by the electron-emitting device near the spacer and the secondary electron emission coefficient of the spacer surface can be controlled by design. It is considered that no improvement has been made, and an improvement method is proposed in Japanese Patent Laid-Open No. 2000-311632.

Further, a high temperature process is required when manufacturing a panel having spacers mounted thereon. However, depending on the combination of the spacer substrate and the high resistance film material, a part of the film may be peeled off by heating.

As described above, the above-described method alone may not be enough to eliminate the image distortion and to withstand the high temperature process.

Therefore, the present invention provides a spacer and a method for manufacturing the spacer in which peeling of a film formed on the surface of the spacer to prevent electrification does not occur even after a heating process, and at the same time, image deterioration due to electrification of the spacer is mitigated. It is an object of the present invention to provide an electron beam apparatus for an image display apparatus, which makes it possible to obtain a high-quality image that is stable for a long period of time.

[0028]

In order to achieve the above object, the spacer of the present invention comprises a first substrate provided with an electron source having a plurality of electron-emitting devices, and a second substrate facing the first substrate. A spacer sandwiched between the first substrate and the second substrate, which is used in an electron beam apparatus including the substrate, and the first substrate is provided on the surface of the spacer substrate that is the substrate of the spacer. Of the first unevenness, a first region that is a convex portion of the first unevenness, and a second recessed portion of the first unevenness that is formed to extend in a direction substantially parallel to the cathode surface of On at least one of the regions, at least two types of uneven shapes including a second uneven shape having a smaller uneven shape than the first uneven shape are formed, and on the first uneven surface and the second uneven surface. An antistatic film to prevent charging is formed on And it features.

The spacer of the present invention configured as described above is provided with at least two types of uneven shapes, that is, first unevenness and second unevenness having a smaller uneven shape than the first unevenness, and each unevenness is formed. An antistatic film is formed on the top. By forming the unevenness on the surface of the spacer in this way, it is possible to reduce the incident angle of incident electrons in the high incident angle mode, which greatly contributes to the charge amount. In addition, the second unevenness having a small uneven shape has an effect of confining secondary electrons. In addition, by making the surface of the spacer uneven, it is possible to suppress the re-entry of secondary electrons emitted from the spacer or the incident angle of reflected electrons from the second substrate. By these, the charging of the spacer can be effectively suppressed. Further, in the spacer of the present invention, since the antistatic film is formed on the uneven shape, it is possible to prevent the antistatic film from peeling off from the spacer substrate due to a heating process or the like.

The spacer of the present invention may have a sheet resistance of 10 ¹⁴ ([Ω / □]) or less of at least part of the antistatic film.

In the spacer of the present invention, the antistatic films formed in the first region and the second region may have different sheet resistance values, or the first region and the second region may have different sheet resistance values. Of the two regions, the potential of the region where the antistatic film having the lower sheet resistance value is formed may be regulated. Further, the antistatic film formed in the second region, which has a sheet resistance value higher than that of the antistatic film formed in the first region, may not be in contact with the first region. The first region and the second region may be continuously formed in a direction substantially parallel to the cathode surface.

Further, in the spacer of the present invention, the sheet resistance R _{L in} the low resistance region and the sheet resistance R _{H in the} high resistance region of the antistatic film formed in the first region and the second region, respectively. following formula (1) may be one which satisfies the relationship of R _L <0.5 R _H · · · · · · · · formula (1), in particular, and R _L R _H may satisfy the relationship of the following expression (2), _RL <0.1 _RH ... Expression (2).

Further, the spacer of the present invention may be one in which a take-out wiring is provided in at least a part of the concave portion or convex portion of the first unevenness, and a predetermined potential is applied from an external power source.

Further, the spacer manufacturing method of the present invention comprises an electron source having a plurality of electron-emitting devices, a first substrate having a cathode surface, and a second substrate facing the first substrate. A method for manufacturing a spacer according to the present invention, which is used in an electron beam apparatus provided and is sandwiched between the first substrate and the second substrate, wherein the base material of the spacer substrate is heated and drawn. And a step of forming the first unevenness on the spacer substrate.

The spacer manufacturing method of the present invention may include a step of forming the second unevenness by blasting, or a step of forming the second unevenness by etching. Further, it may further include a step of forming the second unevenness by forming a roughened surface-roughened film on the first unevenness.

In the electron beam apparatus of the present invention, a first substrate having an electron source having a plurality of electron-emitting devices, a second substrate facing the first substrate, the first substrate and the Second
In the electron beam device having a spacer sandwiched between the substrate and the substrate, the spacer is the spacer of the present invention.

Further, the electron beam apparatus of the present invention includes a first substrate provided with an electron source having a plurality of electron-emitting devices, a second substrate facing the first substrate, a first substrate and a first substrate. In an electron beam device having a spacer sandwiched between two substrates, the spacer is manufactured by the spacer manufacturing method of the present invention.

Further, in the electron beam apparatus of the present invention, each electron-emitting device is a cold cathode electron-emitting device, the second substrate is a transparent substrate on which a light emitting region is formed, and an image is formed on the transparent substrate. It may be one that is done. In this case, the electron beam device functions as an image display device. Since the image display device using the electron beam apparatus of the present invention uses the spacer of the present invention or the spacer manufactured by the method of manufacturing the spacer of the present invention, problems due to charging of the spacer are suppressed and a high quality image is formed. It becomes possible to do.

[0039]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, embodiments of the present invention will be described with reference to the drawings.

FIG. 1 is a schematic external perspective view of the spacer of this embodiment.

The spacer 1 is sandwiched between a face plate 1007 and a rear plate 1005 (see FIG. 3) of the display panel described later, so that the face plate 1
007 and the rear plate 1005 are supported, and the distance between them is secured. The side surface 2 of the spacer substrate 7 has a first region 3 which is a convex portion and a second region 4 which is a concave portion having a depth h.
And are formed substantially parallel to the cathode surface formed on the rear plate 1005. The first area 3 and the second area 4 form the first unevenness 5, and the surface processing is performed on each of the first area 3 and the second area 4 to form a fine uneven shape. A certain second unevenness 6 is formed. That is, the spacer 1 has the first unevenness 5 extending in a direction substantially parallel to the cathode surface.
And the second unevenness 6 that is smaller than the first unevenness 5.
And two types of unevenness are provided. The second unevenness 6 having a fine uneven shape may be formed only on one of the first region 3 and the second region 4.

Although not shown, a side surface 2 of the spacer 1 is provided with an antistatic film for preventing the side surface 2 of the spacer 1 from being charged. The sheet resistance value of the antistatic film is 10 ¹⁴ [Ω from the viewpoint of antistatic property and power consumption.
/ □] or less is preferable. In order to obtain a sufficient antistatic effect, 10 ¹³ [Ω / □] or less is more preferable. Further, the temperature of the spacer rises due to the current flowing through the antistatic film and the heat generation of the entire display panel during operation. If the temperature coefficient of resistance of the antistatic film is a negative value, the current continues to increase until the temperature reaches the limit of the power supply due to temperature rise and current increase. In order to prevent such thermal runaway of the current, it is preferable that the sheet resistance value is 10 ⁷ [Ω / □] or more, although it depends on the shape of the spacer and the voltage applied to the spacer. Further, it is preferable that the sheet resistance value of the second region 4 is higher than the sheet resistance value of the first region 3, and the sheet resistance value of the first region 3 is the second region 4
1/2 or 1/3 of the sheet resistance value of 1 is sufficient, but 1/10 or less is more preferable. That is, the antistatic film is composed of the low resistance film formed in the first region 3 and the high resistance film formed in the second region 4.

Next, a method of manufacturing the spacer 1 of this embodiment will be described with reference to FIG.

FIG. 2 is a diagram showing an example of a method of manufacturing the spacer substrate 7 which is the substrate of the spacer 1 of this embodiment.

First, the glass preform 2a having a recess formed by cutting in advance is sent by the sending means 10 to the heater 11 provided below, and is drawn by the drawing means 12 while being heated by the heater 11. After cooling, the glass base material 2a is cut by the cutting means 13 to manufacture the spacer substrate 7. The first delivery is performed so that the cross-sectional area ratio S2 / S1 between the cross-sectional area S2 of the glass base material 2a and the cross-sectional area S1 of the spacer substrate 7 to be finally obtained becomes a desired cross-sectional area ratio. The delivery speed V1 of the means 10,
The feeding speed V2 of the second feeding means 12 and the heating temperature of the heater are set.

At this stage, the spacer substrate 7 having the first unevenness 5 including the first region 3 and the second region 4 formed on the side surface 2 is manufactured.

The method of manufacturing the spacer substrate 7 is not limited to this, and the spacer substrate 7 can be used after being carved into a desired size from a flat substrate. Further, the first unevenness 5 is not limited to the above-mentioned heat stretching method, and may be formed by a method such as grinding.

For the production of the second unevenness 6, blasting, etching, lift-off, film formation of a roughened film, or the like can be applied. Further, it is also possible to control the shape by using an optical patterning or a mechanical mask, if necessary.
To form the second unevenness 6 by sandblasting, for example, the spacer substrate 7 is fixed to a stage or the like, and the silicon carbide fine particles are scanned while the nozzle for ejecting the silicon carbide fine particle abrasive is scanned in the direction A shown in FIG. Squirt the abrasive,
Then, the nozzle may be moved in the B direction at a predetermined feed pitch, and the fine particle abrasive may be ejected while the nozzle is similarly scanned in the A direction.

As a method of forming the second unevenness 6, a substrate having the first unevenness 5 formed of a fine particle dispersion type film in which silicon oxide or a metal oxide is dispersed in a binder matrix and the high resistance film are formed. A roughened layer may be provided between them.

The surface of the spacer substrate 7, which is a glass substrate, produced by the heating and drawing method has a different elemental composition from that of the substrate produced by grinding or the like. It is desirable that the outermost surface is not contacted with the high resistance film, for example, it is scraped by sandblasting, wet etching, or the high resistance film is formed on the insulating film. Depending on the specifications of the spacer, it is not necessary to perform this treatment on the entire surface, and only a part may be sufficient.

As a method for producing the high resistance film, an existing process for producing an antistatic film can be applied. For example, a sputtering method, a vacuum deposition method, a printing method, an aerosol method, a dipping method or the like can be applied. The thickness of the antistatic film is 10 nm!
The range of 1 [μm] is preferable, but the present invention is not limited to this.

Next, the structure of the display panel of the image display apparatus using the electron beam apparatus of this embodiment as the display panel will be described with reference to FIG.

Rear plate 1005 and side wall 1006
And the face plate 1007 are the display panel 101.
An airtight container for maintaining a vacuum inside is formed, and the inside is maintained at a vacuum of about 1.3 × 10 ⁻⁴ [Pa].

A substrate 1001 is fixed to the rear plate 1005, and N × M cold cathode elements 1002 are formed on the substrate 1001. (N and M are positive integers of 2 or more and are appropriately set according to the target number of display pixels.) Also, N × M cold cathode elements 1002.
Are M row-direction wirings 1003 and N, as shown in FIG.
It is wired by a column-direction wiring 1004 of the book. A portion composed of the substrate 1001, the cold cathode device 1002, the row-direction wiring (upper wiring) 1003 and the column-direction wiring (lower wiring) 1004 is called a multi-electron beam source. In addition, an insulating layer (not shown) is formed between the row-direction wirings 1003 and the column-direction wirings 1004 at least at the intersecting portions so that electrical insulation is maintained.

A fluorescent film 1008 made of a fluorescent material is formed on the lower surface of the face plate 1007, and a fluorescent material (not shown) of three primary colors of red (R), green (G) and blue (B) is applied. It is divided. Further, a black conductive material 1010 as shown in FIG. 4 is provided between the phosphors of the respective colors forming the fluorescent film 1008, and the surface of the fluorescent film 1008 on the rear plate 1005 side is provided with a metal back made of Al or the like. 1009 is formed.

Dx1 to Dxm and Dy1 to Dyn and Hv are electric connection terminals having an airtight structure provided for electrically connecting the display panel 101 and an electric circuit (not shown). Dx1 to Dxm are row-directional wirings 1003 of the multi-electron beam source, Dy1 to Dyn are column-directional wirings 1004 of the multi-electron beam source, and Hv is a metal back 1009.
And are electrically connected to each other.

The spacer 1 of the present embodiment has a rear plate 1005 and a face plate 100 in order to prevent the rear plate 1005 and the face plate 1007 from being deformed or destroyed due to a pressure difference between the inside and the outside of the airtight container.
It is sandwiched between 7 and. Also, as shown in FIG.
The sidewall 1 is provided in the first region 3 having a lower resistance than that of the second region 4.
The lead-out wirings 8 provided on the inner surface of 006 are electrically connected to each other, and a predetermined potential (not shown) is applied to the spacer 1 from an external power source through the respective lead-out wirings 8. In the present embodiment, the first region 3 of the convex portion is the low resistance region, but the high resistance film forming method,
Depending on the film material, the second region 4 serving as a recess may be a low resistance region. Also in this case, the same electrical connection method as the structure shown in FIG. 5 can be used. Each take-out wiring 8
Can be formed on the side wall 1006 by printing using a conductive paste composed of, for example, metal or metal oxide and glass.

The image display device using the display panel 101 described above has the external terminals Dx1 to Dxm, Dy1 of the container.
When a voltage is applied to each cold cathode device 1002 through Dyn, electrons are emitted from each cold cathode device 1002. At the same time, the metal back 1009 is attached to the terminal H outside the container.
A high voltage of several hundred [V] to several [kV] is applied through v to accelerate the emitted electrons, and the face plate 1
Collide with the inner surface of 007. Thereby, the fluorescent film 100
8 phosphors of each color are excited to emit light and an image is displayed.

As described above, since the spacer 1 manufactured by the manufacturing method of this embodiment has the first unevenness 5 and the second unevenness 6 formed on the surface of the spacer substrate 7, the spacer 1 is not formed. The antistatic film does not easily peel off from the surface of the spacer substrate 7 even after a high temperature process in manufacturing a panel to be mounted. Further, by using the spacer 1 of the present embodiment, the spacer 1 in the airtight container
It is possible to provide an electron beam apparatus for an image display apparatus, which can alleviate image deterioration due to electrostatic charging and obtain stable images of high quality for a long period of time.

(Second Embodiment) FIG. 6 is a schematic external perspective view of a spacer of the present embodiment.

The spacer 51 of the present embodiment has a side surface 5
2 has a first region 53 and a second region 54,
The area 54 is an uneven portion 56 formed by blasting, etching, lift-off, etc., and has a rougher surface than the first area 53. In addition, while the spacer 1 of the first embodiment has the first unevenness 5, the spacer 51 of the present embodiment is provided with the uneven shape corresponding to the first unevenness 5 on the side surface 52. The spacer 1 is the same as the spacer 1 of the first embodiment except that it is not provided, and thus detailed description thereof is omitted.

As in the first embodiment, the spacer 51 of this embodiment is also provided with the uneven portion 56, and therefore, even after the high temperature process in the fabrication of the panel on which the spacer 51 is mounted, the spacer 51 is removed from the surface of the spacer substrate 7. The antistatic film is hard to peel off. Further, by using the spacer 51 of the present embodiment, image deterioration due to charging of the spacer 51 in the airtight container is alleviated, and an electron beam for an image display device capable of obtaining a stable and high-quality image for a long period of time. A device can be provided.

[0063]

EXAMPLES A more specific example of the above-described embodiment will be described below, but the present invention is not limited to the following examples. In addition, the first embodiment, the third
Examples to 6 are examples of the first embodiment, and the second example is an example of the second embodiment. Therefore, in the following description, the reference numerals used in the description of each embodiment will be used.

(First Example) Fabrication of Spacer In this example, the spacer 1 shown in FIG. 1 described in the first embodiment is used.
Was produced. As shown in FIG. 7, the spacer substrate 7 serving as the substrate of the spacer 1 has a height: H = 3 [mm], a thickness: D = 0.2 [mm], and a length: L = 40 [mm]. It is a thing.

Further, the spacer substrate 7 of this embodiment is the same as that shown in FIG.
It was produced by the heating and stretching method described in. As the glass base material 2a used in this example, a flat soda lime glass having a height: H = 150 [mm] and a thickness: D = 10 [mm] was used. In addition, as shown in FIG. 2, the cross-sectional area ratio S2 / S1 between the cross-sectional area S2 of the glass base material 2a in which the recess is previously formed by cutting and the cross-sectional area S1 of the spacer substrate 7 to be finally obtained is , 1: 1/2500, the feed rate V1 of the glass base material 2a is 4 [μm / se
c], and the drawing speed V2 was set to 10 [mm / sec]. At this time, the heating temperature by the heater 11 is 600
[° C.] After cooling, it was cut to the above length: L = 40 [mm]. When the uneven shape of the cross section after cutting was measured, depth h = 16 [μm], pitch 30 [μm]
It was confirmed that the periodic first unevenness 5 was formed.

Further, the second unevenness 6 is formed on the spacer substrate 7 on which the first unevenness 5 is formed by the sandblast method.

The above-mentioned cut spacer substrate 7 is replaced by 20 to 3
Fix the nozzle pressure to the stage and set the nozzle pressure to 1.961 × 10
Adjusted to around ⁵ [Pa], and silicon carbide fine particle abrasive # 2
Roughening was performed using 500 (average particle diameter: 5 to 6 [μm]). In the processing area, the sample was scanned by 80 [mm], moved at a feed pitch of 0.5 mm, and the entire processing area was set to 50 [mm] × 150 [mm]. The average roughness (Ra) at this time was 280 [nm]. Next, the spacer substrate 7 is cleaned by organic cleaning or the like, and the spacer substrate 7 and the cathodes of the rear plate 1005 and the face plate 1 are cleaned.
A Ti film having a thickness of 10 [nm] and a Pt film having a thickness of 200 [nm] were formed in a region of No. 007, which is to be the junction portion of the anode, by a sputtering method. This makes it possible to suppress the local accumulation of electric charges in the vicinity of the junction.

Although the second unevenness 6 is formed by sandblasting in the present embodiment, the present invention is not limited to this, and the surface of the spacer substrate 7 roughened by wet etching with hydrofluoric acid has the same average roughness. (Ra) can be obtained. The second unevenness 6 may be formed on at least a part of the first unevenness 5 in the image display.
It is also possible to select the formation site of the unevenness 6 according to the specifications of the spacer 1.

Next, as an antistatic film, a target of Cr and Al is simultaneously sputtered by a high frequency power source in a mixed gas atmosphere with a partial pressure ratio of a deposition gas of Ar: N2 = 1: 2 and a pressure of 0.15 [Pa]. Thus, a nitrogen compound of Cr-Al was formed into a film. The film thickness at this time is 200 [nm], and the sheet resistance value of the convex portion of the first unevenness 5, that is, the sheet resistance value of the low resistance film formed in the first region 3 is 1.2 × 10. ¹¹ [Ω / □], on the other hand, the sheet resistance value of the recess, that is, the sheet resistance value of the high resistance film formed in the second region 4 was 1.2 × 10 ¹² [Ω / □]. .

SEM photographs of the spacer 1 produced in this example are shown in FIGS. 8 and 9. FIG. 8 is a photograph showing the first unevenness 5, and the outline of the first unevenness 5 is shown by a dashed line. FIG. 9 is a photograph showing the second unevenness 6, and is an enlarged photograph of the first region 3 which is the convex portion of the first unevenness 5 in FIG.

Next, the resistance value of each region of the spacer 1 is measured.
To do. With a laser processing machine,
Area is electrically isolated from the surrounding membrane. This area
Then, set a fine needle at a certain interval and set the resistance value R
_LWas measured. Except for the convex part of the first concave and convex in the same way
Resistance value R_HWas measured. At this time, R_L= 0.1R _H
Met.

Production of Display Panel In this example, the display panel 101 having the spacers 1 shown in FIG. 3 was produced. Hereinafter, a method for manufacturing the display panel 101 will be described in detail. The display panel 101 manufactured in this example was also used in the second to sixth examples described later.
However, as will be described later, in the sixth embodiment, the sidewall 100
A take-out wiring 8 is provided at 6 (shown in FIG. 5).

First, the substrate 1001 in which the row-direction wiring 1003, the column-direction wiring 1004, the inter-electrode insulating layer (not shown), and the element electrodes of the surface conduction electron-emitting device and the conductive thin film are formed on the substrate 1001 in advance is reared. Plate 1005
Fixed to.

Next, the spacers 1 produced as described above were fixed on the row-direction wiring 1003 of the substrate 1001 at equal intervals and in parallel with the row-direction wiring 1003. After that, the fluorescent film 1008 is formed on the inner surface of the substrate 1001 approximately 3 mm above.
A face plate 1007 provided with the metal back 1009 and the metal back 1009 is arranged via a side wall 1006, and a rear plate 1005, a face plate 1007, and a side wall 1006.
And each joint of the spacer 1 was fixed. Joint between substrate 1001 and rear plate 1005, rear plate 1005
Of the side wall 1006 and the face plate 100
7 is a frit glass (not shown) at the joint between the side wall 1006.
And apply 1 to 400 [℃] to 500 [℃] in the atmosphere.
It was sealed by baking for 0 minutes or more. Also, the spacer 1
Is a metal back 10 on the face plate 1007 side.
It is placed on the No. 09 surface through a conductive frit glass (not shown) in which a conductive filler or a conductive material such as metal is mixed, and the airtight container is sealed at the same time as 400
By firing at [° C.] to 500 [° C.] for 10 minutes or more, sealing was performed and electrical connection was performed.

As shown in FIG. 4, the fluorescent film 1008 adopts a stripe shape in which each color phosphor extends in the column direction (Y direction), and the black conductor is each color phosphor (R, G,
It is arranged so as to separate not only the pixels B) but also the pixels in the Y direction. The spacer 1 is made of a black conductive material 1010 (line width 300 [μ
m]) via a metal back 1009.
When performing the above-mentioned sealing, each color phosphor and the substrate 10
01 must be made to correspond to the respective elements arranged on the rear plate 1001, the rear plate 1005, the face plate 10
07 and the spacer 1 were sufficiently aligned.

The inside of the airtight container completed as described above is evacuated by a vacuum pump through an exhaust pipe (not shown), and after reaching a sufficient degree of vacuum, the external terminals Dx1 to Dxm and Dy1 to Dy1.
Row-direction wiring 1003 and column-direction wiring 1 through Dyn
A multi-electron beam source was manufactured by supplying power to each element via 004 and performing the above-described energization forming process and energization activation process. Next, at a vacuum degree of about 1.3 × 10 ⁻⁴ [Pa], an exhaust pipe (not shown) was heated by a gas burner to be welded to seal the envelope (airtight container). Finally,
A getter process was performed in order to maintain the degree of vacuum after sealing.

Display panel 10 produced as described above
In an image display device, which is an application example of an electron beam device using No. 1, each cold cathode device (surface conduction electron-emitting device) 1012
, Through the external terminals Dx1 to Dxm and Dy1 to Dyn, electrons are emitted by applying a scanning signal and a modulation signal from a signal generating means (not shown), and a high voltage is applied to the metal back 1009 through a high voltage terminal Hv. The applied electron beam accelerates the emitted electron beam, and the fluorescent film 1008
An image was displayed by causing electrons to collide with and exciting and emitting each color phosphor (R, G, and B in FIG. 4). The applied voltage Va to the high voltage terminal Hv is 3 [kV] to 12 [k].
The voltage Vf applied between the wirings 1013 and 1014 is 14 [V].
And

The light emission spot rows are formed two-dimensionally at equal intervals including the light emission spots from the cold cathode device 1002 in the position near the spacer 1 in the display panel 101, and are clear and have good color reproducibility for a long time. The image can be displayed. This indicates that even if the spacer 1 is installed, the disturbance of the electric field that affects the electron orbit does not occur. Further, the high resistance film was fixed without peeling from the spacer substrate 7 even by the thermal process of heating up to 430 [° C.].

(Second Embodiment) In this embodiment, using a base material which has not been cut, the same method as in the first embodiment is used. Height: H = 3 [mm], thickness: D = 0.2 [m
m], length: L = 40 [mm], a spacer substrate having a smooth side surface is produced, and the spacer 51 shown in FIG. 6 described in the second embodiment is manufactured by blasting the spacer substrate. It was made. The width of the opening is 0.4 [μm], the length is 40 [mm], and 0.7 [μ
m] pitch mask is fixed such that the openings are substantially parallel to the cathode direction, and a silicon carbide fine particle abrasive #
Blasting was performed with 4000 at the same feed rate and discharge pressure as in the first embodiment.

[0080] In the same manner as in the first embodiment, the convex region of the first uneven, was measured the resistance value of the other regions, were R _L = 0.5R _H.

When the spacers 51 were set in the display panel 101 shown in the first embodiment and evaluated, light emitting spot rows at two-dimensional intervals were formed in the same manner as in the first embodiment, and clear images were obtained. It was possible to display an image with good color reproducibility. Further, the film peeling from the substrate did not occur even by the heating process up to 430 [° C.].

(Third Embodiment) Spacer 1 of this embodiment
Is a spacer substrate 7 in which the first unevenness 5 and the second unevenness 6 are formed by the same method as in the first embodiment, and SYM-SI05 and SYM-SN05 manufactured by Kojundo Chemical Laboratory Co., Ltd. : 1
Were mixed in a weight ratio of 1: 1 and applied to the spacer substrate 7 by a spray coater, and baked in the atmosphere at 500 [° C.] for 2 hours to prepare the film. In the spacer 1 after firing, the resistance value of the second region 4 which is the concave portion of the first unevenness 5 was two orders of magnitude lower than the resistance value of the first region 3 which was the convex portion. When the spacers 1 having such characteristics are installed in the display panel 101 and evaluated, the emission spot rows are equally spaced in two dimensions as in the first embodiment, and a clear image with good color reproducibility is formed. I was able to display. Further, the film peeling from the substrate did not occur even by the heating process up to 430 [° C.].

(Fourth Embodiment) The spacer 1 of this embodiment
Also, the spacer substrate 7 having the first unevenness 5 was manufactured by the same method as in the first example. The glass base material 7 is formed so that the pitch t and the depth h of the first unevenness 5 shown in FIG. 1 or FIG.
A was cut. The maximum value of the pitch t is 30 [μm],
The minimum value is 4 [μm], the maximum value of the depth h is 20 [μm],
The minimum value was 4 [μm]. A spacer 1 having a high resistance film formed thereon similar to that of the first embodiment is attached to the display panel 101.
When it was installed in the inside and evaluated, as in the case of the first embodiment, two or more equally spaced emission spot rows were formed, and clear and good color reproducibility image display was possible. In addition, the film was not peeled from the substrate even by the heating process up to 430 ° C.

(Fifth Embodiment) A spacer substrate 7 having the first unevenness 5 is prepared in the same manner as in the first embodiment, and the surface thereof is subjected to a dipping treatment with a PAM606EP solution manufactured by Catalysts & Chemicals Co., Ltd. The spacer 1 was manufactured by heating and baking at 270 [° C.] in an oven. At this time, the average roughness Ra of the fine particle film was set to 450 [Å] and the film thickness was set to about 200 [Å]. Further, as in the first embodiment, a high resistance film was formed by sputtering. When this spacer 1 was installed in the display panel 101 shown in the first embodiment and evaluated, it was found that, as in the case of the first embodiment, light-emission spot rows at two-dimensional intervals were formed, and it was clear and had good color reproducibility. I was able to display a good image.
Further, the film was not peeled from the substrate even by the heating process up to 430 [° C.].

(Sixth Embodiment) A spacer 1 manufactured by the same method as that of the first embodiment has a lead-out wiring 8 shown in FIG.
It was installed in the same display device as in the first embodiment except that there was no. The spacer 1 manufactured in the same manner as in Example 1 was provided with the lead-out wiring 8 shown in FIG.

As shown in FIG. 5, the low resistance portions 3 and the lead wirings 8 are electrically connected to each other, and a predetermined potential (not shown) is applied by an external power source. Although the convex portion is the low resistance region in FIG. 5, the concave portion may be the low resistance region depending on the method of forming the high resistance film and the film material. Also in this case, the same electrical connection method as in this embodiment can be used. Each lead-out wiring can be formed on the support frame by printing using a conductive paste composed of, for example, metal or metal oxide and glass. When the light emission spot row was evaluated, a clear and good color reproducibility image display was possible. In addition, film peeling from the substrate did not occur due to the heating process up to 430 [° C.].

[0087]

As described above, according to the present invention, at least two kinds of uneven shapes, that is, the first unevenness and the second unevenness having a smaller uneven shape than the first unevenness are formed, and each uneven shape is formed. An antistatic film is formed on. Therefore, it is possible to effectively suppress the charging of the spacers, suppress film peeling from the substrate due to a high temperature process, and expand the choice of film materials. By using a spacer that can obtain these effects, an electron beam apparatus for an image display apparatus that alleviates image deterioration due to electrification of the spacer and can obtain a high-quality image that is stable for a long period of time is provided. Can be provided.

[Brief description of drawings]

FIG. 1 is a schematic external perspective view of a spacer according to a first embodiment of the present invention.

FIG. 2 is a diagram showing an example of a spacer substrate manufacturing method according to the first embodiment of the present invention.

FIG. 3 is a schematic perspective view of a display panel of the image forming apparatus according to the first embodiment of the present invention.

FIG. 4 is a schematic plan view showing an arrangement of phosphors in the display panel shown in FIG.

FIG. 5 is a schematic diagram showing an electrical connection state between a first region of a spacer and a lead-out wiring provided on a side wall.

FIG. 6 is a schematic external perspective view of a spacer according to a second embodiment of the present invention.

FIG. 7 is a schematic perspective external view for explaining the dimensions of the spacer substrate manufactured in the first example of the present invention.

FIG. 8 is a photograph showing the first unevenness of the spacer manufactured in the first example of the present invention.

9 is a first convex and concave portion of the photograph shown in FIG.
It is an enlarged photograph of the area.

FIG. 10 is a schematic plan view of an example of a conventional surface conduction electron-emitting device.

FIG. 11 is a schematic side sectional view of an example of a conventional FE type element.

FIG. 12 is a schematic side sectional view of an example of a conventional MIM type element.

FIG. 13 is a schematic perspective view of a display panel of a conventional image forming apparatus.

[Explanation of symbols]

1,51 spacer 2, 52 sides 2a glass base material 3, 53 First area 4, 54 Second area 5 First unevenness 6 second unevenness 7 Spacer substrate 7a Glass base material 8 Takeout wiring 10 Sending out means 11 heater 12 Withdrawal means 13 Cutting means 56 uneven part 101 display panel 1001 substrate 1002 cold cathode device 1003 row direction wiring 1004 Column direction wiring 1005 rear plate 1006 side wall 1007 face plate 1008 fluorescent film 1009 metal back 1010 Black conductive material

   ─────────────────────────────────────────────────── ─── Continued front page    (72) Inventor Masahiro Fushimi             3-30-2 Shimomaruko, Ota-ku, Tokyo             Non non corporation F-term (reference) 5C012 AA01 BB07                 5C036 EE08 EE09 EF01 EF06 EF09                       EG02 EH04 EH08 EH21

Claims (16)

[Claims] 1. A first substrate used in an electron beam apparatus, comprising: a first substrate having an electron source having a plurality of electron-emitting devices; and a second substrate facing the first substrate. In a spacer sandwiched between a substrate and the second substrate, the spacer is formed on the surface of the spacer substrate that is the substrate of the spacer so as to extend in a direction substantially parallel to the cathode surface of the first substrate. The unevenness shape is smaller than the first unevenness in at least one of the first unevenness, the first area that is the convex portion of the first unevenness, and the second area that is the concave portion of the first unevenness. At least two types of uneven shapes including a second unevenness are formed, and an antistatic film for preventing charging is formed on the first unevenness and the second unevenness. Spacer to be. 2. The spacer according to claim 1, wherein at least a part of the antistatic film has a sheet resistance of 10 ¹⁴ ([Ω / □]) or less. 3. The spacer according to claim 1, wherein the antistatic films formed in the first region and the second region respectively have different sheet resistances. 4. The electric potential of an area of one of the first area and the second area, which has a lower sheet resistance and on which the antistatic film is formed, is defined. Spacer. 5. The antistatic film formed in the second region, which has a sheet resistance higher than that of the antistatic film formed in the first region, is not in contact with the first region. The spacer according to claim 3 or 4. 6. The spacer according to claim 1, wherein the first region and the second region are continuously formed in a direction substantially parallel to the cathode surface. 7. A sheet resistance R _{L of} a low resistance region and a sheet resistance R _H of a high resistance region of an antistatic film formed in each of the first region and the second region are expressed by the following formula (1): ), satisfy the relationship of R _L <0.5R _H ················· formula (1), a spacer of any one of claims 3 to 5. 8. The relationship between R _L and R _H satisfies the following formula (2), R _L <0.1R _H. The spacer according to claim 7. 9. The spacer according to claim 1, wherein a take-out wiring is provided on at least a part of the concave and convex portions of the first unevenness, and a predetermined potential is applied from an external power source. . 10. An electron beam apparatus comprising an electron source having a plurality of electron-emitting devices, having a first substrate having a cathode surface, and a second substrate facing the first substrate, The spacer manufacturing method according to claim 1, wherein the spacer is sandwiched between the first substrate and the second substrate, wherein the base material of the spacer substrate is heated and stretched. And a step of forming the first unevenness on the spacer substrate. 11. The method of manufacturing a spacer according to claim 10, including a step of forming the second unevenness by blasting. 12. The method of manufacturing a spacer according to claim 10, including a step of forming the second unevenness by etching. 13. The method for manufacturing a spacer according to claim 10, further comprising: forming the second unevenness by forming a roughened surface-roughened film on the first unevenness. 14. A first substrate provided with an electron source having a plurality of electron-emitting devices, a second substrate facing the first substrate, the first substrate and the second substrate. An electron beam apparatus having a spacer sandwiched therebetween, wherein the spacer is the spacer according to any one of claims 1 to 9. 15. A first substrate provided with an electron source having a plurality of electron-emitting devices, a second substrate facing the first substrate, the first substrate and the second substrate. An electron beam apparatus having a sandwiched spacer, wherein the spacer is manufactured by the spacer manufacturing method according to any one of claims 10 to 13. 16. The electron-emitting device is a cold cathode electron-emitting device, the second substrate is a transparent substrate on which a light emitting region is formed, and an image is formed on the transparent substrate. The electron beam apparatus according to 14 or 15.