JP2003289042A - Substrate treatment device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a substrate treatment device whose maintenance performance is improved, whose maintenance time is shortened, whose operation rate is improved, and whose heating temperature characteristics are improved. <P>SOLUTION: In this substrate treatment device having a substrate holding part 16 and a heating means 19 disposed so as to face the substrate holding part inside a reaction chamber 10, the heating means is provided with a plurality filaments disposed like grids in a flat plate-shaped filament case. <P>COPYRIGHT: (C)2004,JPO

Description

Description: BACKGROUND OF THE INVENTION [0001] 1. Field of the Invention [0002] The present invention relates to a substrate processing apparatus for manufacturing a semiconductor device by performing required processing such as film formation processing, impurity diffusion and etching on a substrate such as a silicon wafer. Things. [0002] Substrate processing is performed by supplying a reaction gas while the substrate is heated. [0003] Since the heating state of the substrate greatly affects the processing quality, it is necessary to uniformly heat the entire substrate, and it is required that the heating source be a planar heating source. or,
As a heating source that can heat quickly and has high heating efficiency,
There is a lamp heating source. Conventionally, as a lamp heating source provided in a substrate processing apparatus, straight tube-shaped lamps arranged at predetermined equal intervals in the same plane are arranged in two stages, and the lamp directions are arranged in upper and lower stages. Are orthogonal to each other, and as the planar arrangement of the lamp, there is a lamp arranged in a right-angle lattice. The lamp heating source is disposed in parallel with the substrate to be processed, and functions as a planar heating source by illuminating the upper and lower lamps to heat the substrate. [0006] The above-mentioned conventional lamp heating source is constituted by a large number of straight tube lamps.
The work of attaching the straight tube lamp to each other was necessary. For this reason, much labor is required for the mounting operation, and there is a possibility that the mounting may be inadequate. Furthermore, setting and maintenance take time, and workability is poor, which is a factor that hinders improvement in the operation rate. Further, since the straight tube lamps are arranged in two upper and lower stages, a straight tube lamp at an intermediate position in contact with the substrate, for example, the substrate is heated from below by a lamp heating source. In this case, the upper straight tube lamp is shaded by the lower straight tube lamp, and there is a problem that the lower straight tube lamp cannot perform effective heating. The present invention has been made in view of the above circumstances and aims to improve maintenance, shorten maintenance time, improve operation rate, and improve heating temperature characteristics. According to the present invention, there is provided a substrate processing apparatus comprising a substrate holding section in a reaction chamber and a heating section provided to face the substrate holding section. The present invention relates to a substrate processing apparatus in which a plurality of filaments are arranged in a grid in a flat filament case. Embodiments of the present invention will be described below with reference to the drawings. An outline of the substrate processing apparatus will be described with reference to FIG. The substrate processing apparatus 1 has a transfer chamber 2 at the center, load / unload chambers 3 and 4 are connected to the transfer chamber 2 in an airtight manner, and a substrate processing chamber 5 is connected to the transfer chamber 2 in an airtight manner. , And a cooling chamber 6 is provided in an airtight manner so as to face the substrate processing chamber 5. A transfer robot 7 is provided in the transfer chamber 2, and a substrate (hereinafter, wafer 18) is taken in from a cassette (not shown) loaded into the load / unload chamber 3.
It is carried into the substrate processing chamber 5. The wafer processed in the substrate processing chamber 5 is transferred by the transfer robot 7 to the cooling chamber 6.
Paid out. The wafer is cooled to room temperature in the cooling chamber 6 and further transferred by the transfer robot 7 to a cassette (not shown) in the load / unload chamber 4. When the processing of the predetermined number of wafers 18 is completed, the cassette in the loading / unloading chamber 4 is carried out. The above operation is repeated, and the substrate processing is sequentially executed. FIG. 2 schematically shows the substrate processing chamber 5. The vacuum vessel 8 includes a body 9, a bottom plate 11, and a top plate 12.
The inside is a reaction chamber 10. The body 9 is provided with a substrate transfer port (not shown) that is opened and closed by a gate valve, and the substrate processing chamber 5 is connected to the transfer chamber 2 through the substrate transfer port. A ring-shaped rotating base 14 is rotatably provided on the bottom plate 11 via a bearing 13, and a susceptor 16 serving as a substrate holding means is provided on the rotating base 14 via a column 15. The recessed part 1 is located at the center of
7 are formed, and a wafer 18 is placed in the concave portion 17. A lamp unit 19 is disposed below the susceptor 16 as a heating unit, and the lamp unit 19 is fixed to the bottom plate 11 by a required unit (not shown). A wafer rotating unit 21 is provided on the bottom plate 11 in an airtight manner, and the wafer rotating unit 21 is connected to the rotating base 14 via required means (not shown) to rotate the rotating base 14. . The bottom plate 11 has a wafer elevating unit 22
Are provided in an airtight manner. The wafer raising / lowering unit 22 has pins (not shown) that go up and down through the lamp unit 19 and the susceptor 16, and the wafer 18 is placed or lifted on the susceptor 16 by raising and lowering the pins. . Thus, the wafer 1 by the wafer elevating unit 22
8 and the transfer robot 7 cooperate with the transfer robot 7 to load and unload the wafer 18, and further move the wafer 1 into the recess 17.
8 is carried out. The top plate 12 is provided with a substrate temperature detector 23 for detecting the temperature of the wafer 18 and a light detector 24 for measuring the emissivity of the wafer 18 in an airtight manner. In FIG. 2, reference numeral 25 denotes an illumination lamp for the light detection unit 24. Although not shown, a reaction gas introduction line and an exhaust line are connected to the vacuum vessel 8 so that the reaction gas can be introduced into the vacuum vessel 8 and the exhaust gas can be exhausted from the vacuum vessel 8. Then, the inside of the vacuum vessel 8 during the processing is maintained at a predetermined pressure. The wafer 18 is heated by the lamp unit 19. At the same time, the wafer rotating unit 2
1, the susceptor 16 through the rotary base 14
Is rotated. Since the lamp unit 19 is fixed, the susceptor 16 and the wafer 18 rotate relative to the lamp unit 19, thereby preventing uneven heating. Next, the lamp unit 19 will be described with reference to FIGS. The filament case 26 formed in a lattice shape
Is an airtight plate-shaped hollow structure made of quartz, and has the same number of vertical through holes 27a, 27b, 27c, 27d in the vertical and horizontal directions.
And horizontal through holes 28a, 28b, 28c, 28d. The vertical through holes 27a, 27b, 27c,
27d and the horizontal through holes 28a, 28b, 28c, 28
If the cross section of d is circular, it is possible to make the structure lightweight and high in strength. The vertical through holes 27a, 27b, 27c, 2
The ends of 7d are filament holding portions 29a, 29b, 29
c, 29d and filament holding parts 29e, 29f, 2
9g, 29h, and the filament holding portion 2
The filament terminal plates 30a, 30b, 30c, 30d and the filament terminal plates 30e, 30f, 30g, 30h are hermetically provided on the filaments 9a, 29b, 29c, 29d and the filament holding portions 29e, 29f, 29g, 29h, respectively. A vertical filament 31a is stretched between the inner end of the filament terminal plate 30a and the inner end of the filament terminal plate 30e, and similarly, the inner ends of the filament terminal plates 30b, 30c, 30d and the filament Vertical filaments 31b, 31c, 31d are stretched between the inner ends of the terminal plates 30f, 30g, 30h. Further, the filament terminal plates 30a, 30b, 30
c, 30d and filament terminal plates 30e, 30f, 3
External ends of 0g and 30h are connectors for an external power supply line (not shown). The horizontal through holes 28a, 28b, 28c, 2
8d are filament holding portions 33a, 33b, 33
c, 33d and filament holding parts 33e, 33f, 3
3g, 33h, and the filament holding portion 3
The filament terminal plates 34a, 34b, 34c, 34d and the filament terminal plates 34e, 34f, 34g, 34h are hermetically provided on the filament holding portions 33a, 33b, 33c, 33d and the filament holding portions 33e, 33f, 33g, 33h, respectively. A horizontal filament 35a is stretched between the inner end of the terminal plate 34a and the inner end of the filament terminal plate 34e, and similarly, the inner ends of the filament terminal plates 34b, 34c, 34d and the filament terminal plates 34f, 34g. , 34h, horizontal filaments 35b, 35c, 35d are stretched. The filament terminal plates 34a, 34b, 34c,
34d and filament terminal plates 34e, 34f, 34
External ends of g and 34h are connectors for an external power line (not shown). The longitudinal filaments 31a, 31b, 31
The horizontal filaments 35a, 35b, 35c and 35d are disposed on the same plane different from the vertical filaments 31a, 31b, 31c and 31d, and the vertical filaments 31a and 31b are disposed on the same plane. , 31
c, 31d and the horizontal filaments 35a, 35b, 35
The positions are shifted from the positions c and 35d in the vertical direction (the direction perpendicular to the paper surface in FIG. 3), so that they do not touch at the intersection. The filament terminal plates 30a, 30b,
30c, 30d and filament terminal plates 30e, 30
f, 30g, and 30h have metal connection bars 36, respectively.
a and the connection bar 36b are hung and detachably attached, and the filament terminal plates 34a, 34b, 34c,
34d and filament terminal plates 34e, 34f, 34
g and 34h are the connection bar 37a and the connection bar 3 respectively.
7b is attached and detachably attached. Since the above-mentioned lamp unit 19 has an integral structure, it can be easily mounted and adjusted on the bottom plate 11. Also, by determining the position and orientation of the filament case 26, the filament terminal plate 30
a, 30b, 30c, 30d and filament terminal plate 3
0e, 30f, 30g, 30h, filament terminal plate 3
Since the positions of 4a, 34b, 34c, 34d and the filament terminal plates 34e, 34f, 34g, 34h are also determined, the adjustment operation and the operation of connecting an external power supply line (not shown) to the terminal plates are also simplified. Hereinafter, the heat generation function of the lamp unit 19 will be described with reference to FIG. The filament terminal plates 30a, 30b,
30c, 30d and one of the filament terminal plates 34a, 34b, 34c, 34d, or the connection bar 36a and the connection bar 37a, to which a positive electrode of a heater power supply (not shown) is connected. 30
e, 30f, 30g, 30h and one of the filament terminal plates 34e, 34f, 34g, 34h, or the connection bar 36b and the connection bar 37b are connected to a negative electrode, and power is supplied from a heater power supply (not shown). Then, the longitudinal filaments 31a, 31b, 31c, 31d,
Electric current is supplied to the horizontal filaments 35a, 35b, 35c, 35d, and the vertical filaments 31a, 31b, 31
c, 31d, the horizontal filaments 35a, 35b, 35
c and 35d generate heat. Thus, the wafer 18 is heated by the lamp unit 19. In addition, since the filament case 26 has an integral structure with respect to a plurality of filaments, there is no shading, and
a, 31b, 31c, 31d and the horizontal filament 35
Since the distance to the wafer 18 can be substantially the same as the distances a, 35b, 35c, and 35d, both filament groups can heat the wafer 18 under the same conditions. Further, the filament terminal plates 30a, 30
0b, 30c, 30d and the filament terminal plate 30e,
30f, 30g, 30h, and the vertical filaments 31a, 31 by changing the connection mode of the power supply to the filament terminal plates 34a, 34b, 34c, 34d and the filament terminal plates 34e, 34f, 34g, 34h.
b, 31c, 31d and horizontal filaments 35a, 35
The heat generation state of b, 35c, 35d can be changed. Further, in connection between the connection bar 36 and the terminal plate 30 and between the connection bar 37 and the terminal plate 34, if connection or non-connection can be selected, a filament to be heated can be selected. A heating mode suitable for substrate processing can be selected. FIG. 5 shows a case where there are five vertical filaments 31 and five horizontal filaments 35. Although not shown, both ends of each of the vertical filaments 31 are connected by a connection bar 36 via a filament terminal plate 30, and both ends of the horizontal filament 35 are connected by a connection bar via a filament terminal plate 34. 37 are connected to each other. A first heater power supply 39 is connected between the filament terminal plate 30f of the vertical filament 31a and the filament terminal plate 30e of the vertical filament 31e, and the filament of the horizontal filament 35a is selected from the horizontal filaments 35. If the second heater power supply 40 is connected between the terminal plate 34a and the filament terminal plate 34j of the horizontal filament 35e and power is supplied independently to the vertical filament 31 and the horizontal filament 35, various heat generation controls can be performed. Further, the connection bar 36 and the connection bar 37 are removed, and the filament terminal plates 30a, 30b, 30
c, 30d, 30e, 30f, 30g, 30h and filament terminal plates 34a, 34b, 34c, 34d, 34
If electric power can be individually supplied to e, 34f, 34g, and 34h, partial temperature control in the lamp unit 19 is also possible. Further, the vertical through holes 27a, 27b, 27
vertical filaments 31a, 31b, 31 in c, 27d
c, 31d and the horizontal through holes 28a, 28b, 28c,
Transverse filaments 35a, 35b, 35c, 3 in 28d
5d may be a plurality of filaments having different calorific values, and the connection between the filament and the terminal plate may be appropriately changed to select a filament to be energized. In this case, the heat generation characteristics of the lamp unit 19 itself can be changed without replacing the lamp unit 19. In the above embodiment, the filament case 26 is formed in a hollow lattice shape, but may be formed in a hollow rectangular flat plate shape or a hollow circular flat plate shape. As described above, according to the present invention, there is provided a substrate processing apparatus having a substrate holding section in a reaction chamber and heating means provided to face the substrate holding section. In the means, since a plurality of filaments are arranged in a grid in a flat filament case, the distance between the intersecting filaments and the substrate is substantially the same, and the filaments and the substrate can be brought close to each other. Excellent effects such as improved heating efficiency and improved uniform heating characteristics can be exhibited without the formation of shadows between each other.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a plan view schematically showing a substrate processing apparatus according to an embodiment of the present invention. FIG. 2 is a cross-sectional view of a substrate processing chamber of the substrate processing apparatus. FIG. 3 is a plan view of a lamp unit used in the substrate processing apparatus. FIG. 4 is a view as viewed in the direction of arrows AA in FIG. 3; FIG. 5 is a connection diagram of a filament of the lamp unit. [Description of Signs] 8 Vacuum container 16 Susceptor 18 Wafer 19 Lamp unit 26 Filament case 30 Filament terminal plate 31 Vertical filament 34 Filament terminal plate 35 Horizontal filament 36 Connection bar 37 Connection bar

Continuation of front page    F term (reference) 3K058 AA86 AA87 BA19 CE02 CE12                       CE19 CE22 CE26                 3K092 PP20 QA05 QB26 QB52 QB56                       QC21 QC36 QC37 RF11 RF30                       VV03 VV22                 5F045 BB10 DP02 DQ17 EK07 EK08

Claims (1)

Claims: 1. A substrate processing apparatus comprising: a substrate holding unit in a reaction chamber; and a heating unit provided to face the substrate holding unit, wherein the heating unit is a flat filament case. A substrate processing apparatus, wherein a plurality of filaments are arranged in a lattice in the inside.