JP2003282952A - Method for manufacturing led lamp, and led lamp - Google Patents
Method for manufacturing led lamp, and led lampInfo
- Publication number
- JP2003282952A JP2003282952A JP2002086580A JP2002086580A JP2003282952A JP 2003282952 A JP2003282952 A JP 2003282952A JP 2002086580 A JP2002086580 A JP 2002086580A JP 2002086580 A JP2002086580 A JP 2002086580A JP 2003282952 A JP2003282952 A JP 2003282952A
- Authority
- JP
- Japan
- Prior art keywords
- led
- silicone resin
- led lamp
- light
- lamp
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 25
- 238000000034 method Methods 0.000 title claims abstract description 5
- 229920002050 silicone resin Polymers 0.000 claims abstract description 68
- 238000010438 heat treatment Methods 0.000 claims abstract description 9
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 26
- 229920005989 resin Polymers 0.000 claims description 17
- 239000011347 resin Substances 0.000 claims description 17
- 239000000758 substrate Substances 0.000 abstract description 25
- 239000012141 concentrate Substances 0.000 abstract description 2
- 239000000126 substance Substances 0.000 abstract 3
- 239000003822 epoxy resin Substances 0.000 description 9
- 229920000647 polyepoxide Polymers 0.000 description 9
- 239000002994 raw material Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 239000004593 Epoxy Substances 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000002845 discoloration Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000004383 yellowing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
Landscapes
- Led Device Packages (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、ＬＥＤランプ、特
に白色光を発光する表面実装型ＬＥＤランプの製造方
法、及び該製造方法によって製造されたＬＥＤランプに
関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an LED lamp, and more particularly to a method for manufacturing a surface mount LED lamp that emits white light, and an LED lamp manufactured by the manufacturing method.
【０００２】[0002]
【従来の技術】表面実装型ＬＥＤランプとは、電極を有
する基板にＬＥＤ（発光ダイオード）を表面実装させた
ＬＥＤランプである。図５は従来の表面実装型ＬＥＤラ
ンプの例を示す斜視図である。図中２は平面視で矩形に
生成された基板であり、基板２の表面には、両短辺から
中央にかけて金属被膜による電極２１，２１が互いに離
隔して形成されている。電極２１，２１の一方には、Ｌ
ＥＤ１が載設されており、ＬＥＤ１の一方の端子が電極
２１，２１の一方に接続され、ＬＥＤ１の他方の端子が
導電性のワイヤ１１を介して電極２１，２１の他方に接
続されている。基板２の表面は、両短辺の付近に形成さ
れている電極２１，２１を除き、光透過性樹脂にて形成
された、ＬＥＤ１及びワイヤ１１が完全に隠れる大きさ
のモールド４によって覆われている。モールド４を形成
する光透過性樹脂には、エポキシ樹脂が主に用いられて
いる。このような表面実装型ＬＥＤランプは、電極２
１，２１を他の回路に接続する陰極および陽極とし、表
示器などに組み込まれるＬＥＤとして用いられる。ま
た、基板２を用いず、電極を兼ねたリードフレーム上に
ＬＥＤ１が実装された表面実装型ＬＥＤランプも用いら
れている。2. Description of the Related Art A surface mount LED lamp is an LED lamp in which an LED (light emitting diode) is surface mounted on a substrate having electrodes. FIG. 5 is a perspective view showing an example of a conventional surface mount LED lamp. Reference numeral 2 in the drawing is a substrate formed in a rectangular shape in a plan view, and electrodes 21 and 21 made of a metal coating are formed on the surface of the substrate 2 so as to be spaced apart from each other from both short sides to the center. One of the electrodes 21, 21 has L
The ED1 is mounted, one terminal of the LED1 is connected to one of the electrodes 21 and 21, and the other terminal of the LED1 is connected to the other of the electrodes 21 and 21 via the conductive wire 11. The surface of the substrate 2 is covered with a mold 4 formed of a light-transmissive resin and having a size such that the LED 1 and the wire 11 are completely hidden, except for the electrodes 21 and 21 formed near both short sides. There is. An epoxy resin is mainly used as a light-transmissive resin forming the mold 4. Such a surface-mounted LED lamp has electrodes 2
The cathodes 1 and 21 are used as cathodes and anodes connected to other circuits, and are used as LEDs incorporated in a display or the like. Further, a surface mount LED lamp in which the LED 1 is mounted on a lead frame which also serves as an electrode without using the substrate 2 is also used.
【０００３】ＬＥＤ１として青色光を発光する青色ＬＥ
Ｄを用いた場合、エポキシ樹脂は青色光によって黄変す
る特性があるため、エポキシ樹脂を用いてモールド４を
形成している表面実装型ＬＥＤランプは、長期間の使用
により明るさが劣化する。このため、青色光による変色
を起こさないシリコーン樹脂を用いてモールド４を形成
した表面実装型ＬＥＤランプが使用されている。図６
は、モールド４にシリコーン樹脂を用いた表面実装型Ｌ
ＥＤランプの例を示す断面図である。基板２には、升状
に形成された樹脂ケース５が備えられており、樹脂ケー
ス５の内側にＬＥＤ１が備えられ、ＬＥＤ１を覆うよう
に樹脂ケース５の内側にモールド４が形成されている。
シリコーン樹脂は、エポキシ樹脂よりも軟らかいため
に、モールド４を形成するためには、より硬い樹脂で形
成された樹脂ケース５が必要となる。Blue LE that emits blue light as LED 1
When D is used, since the epoxy resin has a characteristic of yellowing with blue light, the surface mount LED lamp in which the mold 4 is formed using the epoxy resin deteriorates in brightness due to long-term use. Therefore, a surface mount LED lamp in which the mold 4 is formed using a silicone resin that does not cause discoloration due to blue light is used. Figure 6
Is a surface mount type L using a silicone resin for the mold 4.
It is sectional drawing which shows the example of ED lamp. The substrate 2 is provided with a resin case 5 formed in a box shape, the LED 1 is provided inside the resin case 5, and the mold 4 is formed inside the resin case 5 so as to cover the LED 1.
Since the silicone resin is softer than the epoxy resin, the resin case 5 made of a harder resin is required to form the mold 4.
【０００４】また、シリコーン樹脂にてＬＥＤ１を覆
い、更にシリコーン樹脂をエポキシ樹脂にて覆うことに
より形成されたモールド４を備えた表面実装型ＬＥＤラ
ンプも使用されている。軟らかく耐久性に欠けるシリコ
ーン樹脂を硬いエポキシ樹脂で覆うことで、表面実装型
ＬＥＤランプの耐久性を向上させることができる。A surface mount type LED lamp is also used, which is provided with a mold 4 formed by covering the LED 1 with a silicone resin and further covering the silicone resin with an epoxy resin. By covering the silicone resin that is soft and lacks in durability with a hard epoxy resin, the durability of the surface-mounted LED lamp can be improved.
【０００５】[0005]
【発明が解決しようとする課題】樹脂ケース５を用いて
表面実装型ＬＥＤランプを作成した場合は、樹脂ケース
５のために小型化が困難であり、製造の際には樹脂ケー
ス５を基板２に備える行程のためにコストが上昇すると
いう問題がある。When a surface mount type LED lamp is produced by using the resin case 5, it is difficult to reduce the size because of the resin case 5, and the resin case 5 is used for the substrate 2 during manufacturing. There is a problem that the cost increases due to the process of preparing for.
【０００６】ＬＥＤ１をシリコーン樹脂で覆って更にエ
ポキシ樹脂で覆ったモールドを備えた表面実装型ＬＥＤ
ランプは、樹脂ケース５が不必要であるため、小型化が
可能である。しかし、シリコーン樹脂はチクソ性が小さ
いため、製造の際に必要な部位から流出し、ＬＥＤを充
分に覆うことができない、又は電極を覆って接続不良の
原因となる等、樹脂ケース５なしで安定した形でモール
ドを形成することが困難であり、作成した表面実装型Ｌ
ＥＤランプが信頼性に欠けるという問題がある。Surface-mount LED having a mold in which the LED 1 is covered with a silicone resin and further covered with an epoxy resin.
Since the resin case 5 is unnecessary for the lamp, the lamp can be downsized. However, since the silicone resin has a small thixotropy, it flows out from a necessary portion during manufacturing and cannot sufficiently cover the LED, or covers the electrode to cause a connection failure, and thus is stable without the resin case 5. It is difficult to form a mold in the form
There is a problem that the ED lamp lacks reliability.
【０００７】本発明は、以上の問題を解決するためにな
されたものであって、その目的とするところは、ＬＥＤ
ランプを製造する際に、ＬＥＤを搭載した基板またはリ
ードフレームを加熱しながらシリコーン樹脂を塗布する
ことによって、ＬＥＤを覆うシリコーン樹脂を効果的に
硬化させてＬＥＤランプの信頼性を向上させ、また、Ｌ
ＥＤランプを小型化することができるＬＥＤランプの製
造方法、及び該製造方法によって製造されたＬＥＤラン
プを提供することにある。The present invention has been made to solve the above problems, and its purpose is to provide an LED.
When manufacturing a lamp, by coating the silicone resin while heating the substrate or the lead frame on which the LED is mounted, the silicone resin that covers the LED is effectively cured and the reliability of the LED lamp is improved. L
An object of the present invention is to provide an LED lamp manufacturing method capable of downsizing an ED lamp and an LED lamp manufactured by the manufacturing method.
【０００８】[0008]
【課題を解決するための手段】第１発明に係るＬＥＤラ
ンプの製造方法は、配線基板又はリードフレーム上に実
装されたＬＥＤの発光面にシリコーン樹脂を塗布し、シ
リコーン樹脂にてＬＥＤの発光面が覆われたＬＥＤラン
プを製造する方法において、ＬＥＤを実装した配線基板
又はリードフレームを加熱した状態でＬＥＤにシリコー
ン樹脂を塗布することを特徴とする。According to a first aspect of the present invention, there is provided an LED lamp manufacturing method, wherein a light emitting surface of an LED mounted on a wiring board or a lead frame is coated with silicone resin, and the light emitting surface of the LED is coated with the silicone resin. In a method of manufacturing an LED lamp in which the LED is covered, a silicone resin is applied to the LED while the wiring board or the lead frame on which the LED is mounted is heated.
【０００９】第２発明に係るＬＥＤランプの製造方法
は、塗布されるシリコーン樹脂の温度を５０℃以上にす
べく前記配線基板又は前記リードフレームを加熱するこ
とを特徴とする。The LED lamp manufacturing method according to the second aspect of the present invention is characterized in that the wiring board or the lead frame is heated so that the temperature of the applied silicone resin is 50 ° C. or higher.
【００１０】第３発明に係るＬＥＤランプは、配線基板
又はリードフレーム上に実装されたＬＥＤの発光面が、
ＬＥＤから発光された光を吸収して発光する蛍光体を含
んでいるシリコーン樹脂にて覆われており、シリコーン
樹脂はさらに光透過性樹脂にて覆われているＬＥＤラン
プにおいて、前記シリコーン樹脂が覆っている部分のう
ち、１／２以上の部分がＬＥＤの発光面であることを特
徴とする。In the LED lamp according to the third invention, the light emitting surface of the LED mounted on the wiring board or the lead frame is
In an LED lamp, which is covered with a silicone resin containing a phosphor that absorbs light emitted from the LED and emits light, and the silicone resin is further covered with a light transmissive resin. It is characterized in that at least one-half or more of the above-mentioned portions are the light emitting surface of the LED.
【００１１】第１発明及び第２発明においては、ＬＥＤ
を実装した基板またはリードフレームを加熱しながら、
ＬＥＤにシリコーン樹脂を塗布する。シリコーン樹脂の
温度を５０℃以上にすべく加熱することにより、シリコ
ーン樹脂は、塗布された位置で硬化するため、シリコー
ン樹脂が必要な部位から流出せず、信頼性が向上したＬ
ＥＤランプを製造することができる。In the first and second inventions, the LED
While heating the board or lead frame on which
Apply silicone resin to the LED. By heating the silicone resin to a temperature of 50 ° C. or higher, the silicone resin cures at the position where it is applied, so that the silicone resin does not flow out from the necessary part and the reliability is improved.
ED lamps can be manufactured.
【００１２】第３発明においては、蛍光体を含んだシリ
コーン樹脂が覆っているＬＥＤランプの部分の面積のう
ち少なくとも１／２以上の面積を占めているのが、ＬＥ
Ｄの発光面をシリコーン樹脂が覆っている部分であるた
め、蛍光体がＬＥＤの発光面に集中して、蛍光体がＬＥ
Ｄの光を吸収して発光する効率が向上される。ＬＥＤと
して青色光を発光する青色ＬＥＤを用い、蛍光体として
青色光を吸収してより長波長の光を発光する蛍光体を用
いた場合は、従来に比べて小型の白色ＬＥＤを実現する
ことができる。In the third invention, LE occupies at least ½ or more of the area of the LED lamp covered by the silicone resin containing the phosphor.
Since the light emitting surface of D is covered with the silicone resin, the phosphor is concentrated on the light emitting surface of the LED, and the phosphor is LE.
The efficiency of absorbing the D light and emitting light is improved. When a blue LED that emits blue light is used as the LED and a phosphor that absorbs blue light and emits light of a longer wavelength is used as the phosphor, it is possible to realize a white LED that is smaller than conventional ones. it can.
【００１３】[0013]
【発明の実施の形態】以下、本発明をその実施の形態を
示す図面に基づき具体的に説明する。本実施の形態にお
いては、本発明のＬＥＤランプの例として表面実装型Ｌ
ＥＤランプの形態を示す。図１は、本発明に係る表面実
装型ＬＥＤランプを示す平面図であり、図２は、本発明
に係る表面実装型ＬＥＤランプを示す正面図である。図
中２は、エポキシ等の絶縁材にて形成された基板であ
り、矩形に形成されている。基板２の表面には、両短辺
から基板２の中央にかけて金属被膜による電極２１，２
１が互いに離隔して形成されており、電極２１，２１の
一方には、ＬＥＤ１が載設されている。ＬＥＤ１は、青
色光を発光する青色ＬＥＤであり、発光面上に一対の接
続端子を備えている。ＬＥＤ１の一対の接続端子の一方
は、金線またはアルミニウム線などを用いたワイヤ１１
にて、ＬＥＤ１が載設されている電極２１，２１の一方
に接続されており、ＬＥＤ１の一対の接続端子の他方
は、他のワイヤ１１にて電極２１，２１の他方に接続さ
れている。ＬＥＤ１及びＬＥＤ１とワイヤ１１，１１と
の接続部分は、シリコーン樹脂にて形成されたシリコー
ン樹脂部３にて覆われている。シリコーン樹脂部３は、
ＬＥＤ１を搭載した電極２１上で凸レンズの形状に形成
されており、ＬＥＤ１全体を覆っている。また、シリコ
ーン樹脂部３は、ＬＥＤ１からの青色光を吸収してより
長波長の光を発光する蛍光体を含んでいる。基板２の表
面は、電極２１，２１の基板２の両短辺付近に形成され
ている部分を除き、ＬＥＤ１、ワイヤ１１，１１及びシ
リコーン樹脂部３が完全に隠れる大きさの台状に形成さ
れたモールド４によって覆われており、モールド４は光
透過性のエポキシ樹脂にて形成されている。電極２１，
２１間に外部から電力が供給されることにより、ＬＥＤ
１に電流が流れてＬＥＤ１は青色光を発光し、シリコー
ン樹脂部３に含まれる蛍光体が青色光を吸収してより長
波長の光を発光し、本発明のＬＥＤランプは、ＬＥＤ１
からの光と蛍光体からの光が混合した白色光を発光す
る。BEST MODE FOR CARRYING OUT THE INVENTION The present invention will be specifically described below with reference to the drawings showing the embodiments thereof. In the present embodiment, a surface mount type L is used as an example of the LED lamp of the present invention.
The form of an ED lamp is shown. FIG. 1 is a plan view showing a surface mount LED lamp according to the present invention, and FIG. 2 is a front view showing a surface mount LED lamp according to the present invention. Reference numeral 2 in the drawing denotes a substrate formed of an insulating material such as epoxy, which is formed in a rectangular shape. On the surface of the substrate 2, from the short sides to the center of the substrate 2, electrodes 21 and 2 made of a metal film are formed.
1 are formed separately from each other, and the LED 1 is mounted on one of the electrodes 21 and 21. The LED 1 is a blue LED that emits blue light and includes a pair of connection terminals on the light emitting surface. One of the pair of connection terminals of the LED 1 is a wire 11 using a gold wire or an aluminum wire.
The LED 1 is connected to one of the electrodes 21 and 21 on which the LED 1 is mounted, and the other of the pair of connection terminals of the LED 1 is connected to the other of the electrodes 21 and 21 by another wire 11. The LED 1 and the connection between the LED 1 and the wires 11, 11 are covered with a silicone resin portion 3 formed of a silicone resin. The silicone resin part 3
It is formed in the shape of a convex lens on the electrode 21 on which the LED 1 is mounted, and covers the entire LED 1. Further, the silicone resin portion 3 includes a phosphor that absorbs blue light from the LED 1 and emits light having a longer wavelength. The surface of the substrate 2 is formed in a trapezoidal shape having a size in which the LED 1, the wires 11, 11 and the silicone resin portion 3 are completely hidden except for the portions of the electrodes 21, 21 formed near both short sides of the substrate 2. Is covered with a mold 4, and the mold 4 is formed of a light-transmitting epoxy resin. Electrode 21,
Power is supplied from the outside between 21
LED1 emits blue light when a current flows through the phosphor 1, and the phosphor contained in the silicone resin portion 3 absorbs blue light to emit longer wavelength light.
It emits white light that is a mixture of the light from the and the light from the phosphor.
【００１４】図３は、本発明に係る表面実装型ＬＥＤラ
ンプの製造方法を説明するための側面図である。図中２
０はエポキシ等の絶縁材にて形成された板状の原材であ
り、短辺が基板２の長辺と同じ長さの長尺の矩形に形成
されており、図中に破線にて示した切断線にて切断され
て複数の基板２，２，…が形成される。原材２０の表面
には、銅またはアルミニウムなどの金属被膜により、電
極２１，２１のパターンが形成され、図３（ａ）に示す
ごとく、電極２１，２１の一方にＬＥＤ１，１，…が載
設され、ＬＥＤ１，１，…の一対の接続端子の夫々と電
極２１，２１の一方または他方とがワイヤ１１，１１，
…により接続される。次に、図３（ｂ）に示すごとく、
基板２となる原材２０を５０℃以上に加熱し、加熱した
状態のままで、ＬＥＤ１の表面に蛍光体を含ませたシリ
コーン樹脂を塗布する。シリコーン樹脂は、熱によって
硬化し、ＬＥＤ１を覆ってシリコーン樹脂部３が形成さ
れる。シリコーン樹脂は、塗布された位置から流出せず
に、塗布された位置で硬化する。シリコーン樹脂は５０
℃以上で硬化し、基板２がエポキシ基板である場合に
は、切断されて基板２となる原材２０が１５０℃程度ま
で耐えられるため、塗布されるシリコーン樹脂の温度が
５０℃以上となり、原材２０の温度が１５０℃以下とな
る条件で加熱が行われる。次に、全体を硬化炉にて１５
０℃で１時間処理し、シリコーン樹脂を完全に硬化させ
る。FIG. 3 is a side view for explaining a method of manufacturing a surface mount LED lamp according to the present invention. 2 in the figure
Reference numeral 0 is a plate-shaped raw material formed of an insulating material such as epoxy, and has a short side formed in a long rectangle having the same length as the long side of the substrate 2, and is shown by a broken line in the figure. Are cut along the cutting lines to form a plurality of substrates 2, 2, .... A pattern of electrodes 21, 21 is formed on the surface of the raw material 20 by a metal coating such as copper or aluminum. As shown in FIG. 3 (a), the LEDs 1, 1, ... Are mounted on one of the electrodes 21, 21. , A pair of connection terminals of the LEDs 1, 1, ... And one or the other of the electrodes 21, 21 are connected to the wires 11, 11 ,.
Connected by. Next, as shown in FIG.
The raw material 20 to be the substrate 2 is heated to 50 ° C. or higher, and the surface of the LED 1 is coated with a silicone resin containing a phosphor while being heated. The silicone resin is cured by heat, and the silicone resin portion 3 is formed so as to cover the LED 1. The silicone resin does not flow out from the applied position, but cures at the applied position. 50 for silicone resin
When the substrate 2 is an epoxy substrate that is cured at a temperature of ℃ or higher, the raw material 20 that is cut and becomes the substrate 2 can withstand up to about 150 ℃, so the temperature of the applied silicone resin becomes 50 ℃ or higher, The heating is performed under the condition that the temperature of the material 20 is 150 ° C. or lower. Then, the whole is cured in a curing oven
The silicone resin is completely cured by treating at 0 ° C. for 1 hour.
【００１５】次に、トランスファー成形により、図３
（ｃ）に示すごとく、電極２１，２１の端部を除いて原
材２０の上面を覆うモールド４をエポキシ樹脂を用いて
成形する。ＬＥＤ１及びシリコーン樹脂部３はモールド
４に完全に覆われる。次に、モールド４ごと原材２０を
切断線に沿って切断し、個々の表面実装型ＬＥＤランプ
を分離して完成させる。Next, as shown in FIG.
As shown in (c), a mold 4 that covers the upper surface of the raw material 20 except for the ends of the electrodes 21 and 21 is molded using an epoxy resin. The LED 1 and the silicone resin portion 3 are completely covered with the mold 4. Next, the raw material 20 together with the mold 4 is cut along a cutting line, and individual surface mount LED lamps are separated and completed.
【００１６】本発明の製造方法は、加熱を行わずにシリ
コーン樹脂部３を形成する従来の方法に比べて、シリコ
ーン樹脂が塗布した部位から流出して電極を覆って接続
不良を起こすことがなく、また、ＬＥＤ１がシリコーン
樹脂にて確実に覆われるため、表面実装型ＬＥＤランプ
の信頼性が向上する。また、表面実装型ＬＥＤランプの
製造の歩留まりが向上する。更に、シリコーン樹脂部３
に含まれる蛍光体がＬＥＤ１の近傍に集中し、特に発光
面上に位置する蛍光体が多いため、ＬＥＤ１からの光を
吸収して発光する蛍光体の割合が増大し、蛍光体の利用
効率が向上する。Compared with the conventional method of forming the silicone resin portion 3 without heating, the manufacturing method of the present invention does not cause a connection failure by flowing out from the portion coated with the silicone resin and covering the electrode. Moreover, since the LED 1 is reliably covered with the silicone resin, the reliability of the surface-mounted LED lamp is improved. Further, the manufacturing yield of the surface mount LED lamp is improved. Furthermore, the silicone resin part 3
Since the phosphor contained in the LED concentrates in the vicinity of the LED 1 and there are many phosphors located especially on the light emitting surface, the ratio of the phosphor that absorbs light from the LED 1 and emits light increases, and the utilization efficiency of the phosphor is improves.
【００１７】図４は、本発明に係る表面実装型ＬＥＤラ
ンプの他の例を示した正面図である。図に示した例で
は、ＬＥＤ１の発光面上にシリコーン樹脂部３が形成さ
れており、平面視でのシリコーン樹脂部３の面積のうち
少なくとも１／２以上が、ＬＥＤ１の発光面を覆ってい
る面積となっている。本発明の製造方法を用いることに
より、シリコーン樹脂が塗布された位置で硬化するた
め、ＬＥＤ１の発光面上でシリコーン樹脂を硬化させ
て、シリコーン樹脂のほぼ全てがＬＥＤ１の発光面上に
集中したシリコーン樹脂部３を形成することが可能とな
る。ＬＥＤ１の発光面上にシリコーン樹脂部３が形成さ
れているため、蛍光体の利用効率が更に増大され、蛍光
体の量を節約することができ、表面実装型ＬＥＤランプ
の製造コストが抑制される。FIG. 4 is a front view showing another example of the surface-mounted LED lamp according to the present invention. In the example shown in the figure, the silicone resin portion 3 is formed on the light emitting surface of the LED 1, and at least 1/2 or more of the area of the silicone resin portion 3 in plan view covers the light emitting surface of the LED 1. It has become an area. By using the manufacturing method of the present invention, the silicone resin is cured at the position where it is applied. Therefore, the silicone resin is cured on the light emitting surface of the LED 1, and almost all of the silicone resin is concentrated on the light emitting surface of the LED 1. The resin portion 3 can be formed. Since the silicone resin portion 3 is formed on the light emitting surface of the LED 1, the utilization efficiency of the phosphor is further increased, the amount of the phosphor can be saved, and the manufacturing cost of the surface mount LED lamp is suppressed. .
【００１８】以上詳述した如く、本発明においては、蛍
光体を含んだシリコーン樹脂にてＬＥＤ１の発光面を覆
った表面実装型ＬＥＤランプを安定して製造することが
できるため、樹脂ケースを用いた従来の表面実装型ＬＥ
Ｄランプに比べて、表面実装型ＬＥＤランプの小型化が
可能であり、また、製造コストを抑制することができ
る。特に、白色光を発光する表面実装型ＬＥＤランプの
小型化を促進することができる。As described above in detail, in the present invention, since the surface mount type LED lamp in which the light emitting surface of the LED 1 is covered with the silicone resin containing the phosphor can be stably manufactured, the resin case is used. Conventional surface mount type LE
As compared with the D lamp, the surface mount LED lamp can be downsized and the manufacturing cost can be suppressed. In particular, it is possible to promote the miniaturization of the surface mount LED lamp that emits white light.
【００１９】本実施の形態においては、ＬＥＤ１は青色
ＬＥＤであり、シリコーン樹脂部３は蛍光体を含むこと
としたが、これに限るものではなく、蛍光体を用いずに
ＬＥＤ１として青色以外の光を発光するＬＥＤを用いて
も良い。また、本実施の形態においては、本発明のＬＥ
Ｄランプとして、基板２上にＬＥＤ１が実装された表面
実装型ＬＥＤランプを示したが、これに限るものではな
く、基板２ではなく、金属製のリードフレームにＬＥＤ
１を実装して製造したＬＥＤランプであってもよい。こ
の場合は、リードフレームは基板２に比べてより高温に
耐えられるため、リードフレームが１５０℃以上になる
温度で処理を行うことができる。また、本発明のＬＥＤ
ランプは、表面実装型ＬＥＤランプではなく、金属製の
電極に接続されたＬＥＤ１を砲弾型のモールド４が覆っ
ている砲弾型のＬＥＤランプであってもよい。この場合
においても、電極となるリードフレームにＬＥＤ１を搭
載して加熱することで、凸レンズ状のシリコーン樹脂部
３を効果的に形成することができ、信頼性のあるＬＥＤ
ランプを製造することができる。In the present embodiment, the LED 1 is a blue LED, and the silicone resin portion 3 contains the phosphor. However, the present invention is not limited to this, and the LED 1 can emit light other than blue light without using the phosphor. You may use the LED which light-emits. Further, in the present embodiment, the LE of the present invention is used.
As the D lamp, the surface mount type LED lamp in which the LED 1 is mounted on the substrate 2 is shown, but the D lamp is not limited to this, and the LED is mounted on the metal lead frame instead of the substrate 2.
The LED lamp manufactured by mounting 1 may be used. In this case, the lead frame can withstand higher temperatures than the substrate 2, so that the treatment can be performed at a temperature at which the lead frame becomes 150 ° C. or higher. In addition, the LED of the present invention
The lamp may not be a surface-mount LED lamp, but may be a shell-type LED lamp in which the LED 1 connected to a metal electrode is covered with a shell-type mold 4. Also in this case, by mounting the LED 1 on a lead frame that serves as an electrode and heating it, the silicone resin portion 3 in the form of a convex lens can be effectively formed, and a reliable LED can be obtained.
The lamp can be manufactured.
【００２０】[0020]
【発明の効果】第１発明及び第２発明においては、ＬＥ
Ｄを実装した基板またはリードフレームを加熱しなが
ら、ＬＥＤにシリコーン樹脂を塗布することにより、シ
リコーン樹脂は、塗布された位置で硬化するため、シリ
コーン樹脂が必要な部位から流出せず、信頼性が向上し
たＬＥＤランプを製造することができる。また、樹脂ケ
ースを用いないために、製造コストが抑制され、更に、
ＬＥＤランプの小型化を促進することができる。In the first and second inventions, LE
By applying the silicone resin to the LED while heating the substrate on which the D is mounted or the lead frame, the silicone resin cures at the applied position, so that the silicone resin does not flow out from the necessary portion and reliability is improved. Improved LED lamps can be manufactured. Further, since the resin case is not used, the manufacturing cost is suppressed, and further,
The miniaturization of the LED lamp can be promoted.
【００２１】第３発明においては、蛍光体を含んだシリ
コーン樹脂が覆っているＬＥＤランプの部分の面積のう
ち少なくとも１／２以上の面積を占めているのが、ＬＥ
Ｄの発光面を覆っている部分であるため、蛍光体がＬＥ
Ｄの発光面に集中して、蛍光体がＬＥＤの光を吸収して
発光する効率が向上される。蛍光体の量を節約すること
ができるため、ＬＥＤランプの製造コストが抑制され
る。また、ＬＥＤとして青色光を発光する青色ＬＥＤを
用い、蛍光体として青色光を吸収してより長波長の光を
発光する蛍光体を用いた場合は、従来に比べて小型の白
色ＬＥＤを実現することができる等、本発明は優れた効
果を奏する。In the third invention, LE occupies at least 1/2 or more of the area of the LED lamp covered by the silicone resin containing the phosphor.
Since it is the part that covers the light emitting surface of D, the phosphor is LE
By concentrating on the light emitting surface of D, the efficiency with which the phosphor absorbs the light of the LED and emits light is improved. Since the amount of phosphor can be saved, the manufacturing cost of the LED lamp is suppressed. When a blue LED that emits blue light is used as the LED and a phosphor that absorbs blue light and emits light of a longer wavelength is used as the phosphor, a white LED that is smaller than the conventional one is realized. That is, the present invention has excellent effects.
【図１】本発明に係る表面実装型ＬＥＤランプを示す平
面図である。FIG. 1 is a plan view showing a surface-mounted LED lamp according to the present invention.
【図２】本発明に係る表面実装型ＬＥＤランプを示す正
面図である。FIG. 2 is a front view showing a surface-mounted LED lamp according to the present invention.
【図３】本発明に係る表面実装型ＬＥＤランプの製造方
法を説明するための側面図である。FIG. 3 is a side view for explaining a method of manufacturing a surface mount LED lamp according to the present invention.
【図４】本発明に係る表面実装型ＬＥＤランプの他の例
を示した正面図である。FIG. 4 is a front view showing another example of the surface mount LED lamp according to the present invention.
【図５】従来の表面実装型ＬＥＤランプの例を示す斜視
図である。FIG. 5 is a perspective view showing an example of a conventional surface mount LED lamp.
【図６】モールドにシリコーン樹脂を用いた表面実装型
ＬＥＤランプの例を示す断面図である。FIG. 6 is a cross-sectional view showing an example of a surface mount LED lamp using a silicone resin as a mold.
１ ＬＥＤ ２ 基板 ２０ 原材 ３ シリコーン樹脂部 ４ モールド 1 LED 2 substrates 20 raw materials 3 Silicone resin part 4 mold
Claims (3)
れたＬＥＤの発光面にシリコーン樹脂を塗布し、シリコ
ーン樹脂にてＬＥＤの発光面が覆われたＬＥＤランプを
製造する方法において、 ＬＥＤを実装した配線基板又はリードフレームを加熱し
た状態でＬＥＤにシリコーン樹脂を塗布することを特徴
とするＬＥＤランプの製造方法。1. A method of manufacturing an LED lamp in which a light emitting surface of an LED mounted on a wiring board or a lead frame is coated with silicone resin and the light emitting surface of the LED is covered with the silicone resin. A method for manufacturing an LED lamp, which comprises applying a silicone resin to an LED while heating a wiring board or a lead frame.
℃以上にすべく前記配線基板又は前記リードフレームを
加熱することを特徴とする請求項１に記載のＬＥＤラン
プの製造方法。2. The temperature of the silicone resin applied is 50
The method of manufacturing an LED lamp according to claim 1, wherein the wiring board or the lead frame is heated to a temperature of not less than ° C.
れたＬＥＤの発光面が、ＬＥＤから発光された光を吸収
して発光する蛍光体を含んでいるシリコーン樹脂にて覆
われており、シリコーン樹脂はさらに光透過性樹脂にて
覆われているＬＥＤランプにおいて、 前記シリコーン樹脂が覆っている部分のうち、１／２以
上の部分がＬＥＤの発光面であることを特徴とするＬＥ
Ｄランプ。3. A light emitting surface of an LED mounted on a wiring board or a lead frame is covered with a silicone resin containing a phosphor that absorbs light emitted from the LED and emits light. In an LED lamp further covered with a light-transmitting resin, at least half of the portion covered with the silicone resin is a light emitting surface of the LED.
D lamp.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002086580A JP4198928B2 (en) | 2002-03-26 | 2002-03-26 | LED lamp manufacturing method and LED lamp |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002086580A JP4198928B2 (en) | 2002-03-26 | 2002-03-26 | LED lamp manufacturing method and LED lamp |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2003282952A true JP2003282952A (en) | 2003-10-03 |
| JP4198928B2 JP4198928B2 (en) | 2008-12-17 |
Family
ID=29233137
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002086580A Expired - Fee Related JP4198928B2 (en) | 2002-03-26 | 2002-03-26 | LED lamp manufacturing method and LED lamp |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4198928B2 (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006228589A (en) * | 2005-02-18 | 2006-08-31 | Minebea Co Ltd | Planar lighting device |
| JP2009266863A (en) * | 2008-04-22 | 2009-11-12 | Minami Kk | Led light-emitting object |
| JP2013521652A (en) * | 2010-03-03 | 2013-06-10 | クリー インコーポレイテッド | System and method for applying an optical material to an optical element |
| US8618569B2 (en) | 2008-01-15 | 2013-12-31 | Cree, Inc. | Packaged light emitting diodes including phosphor coating and phosphor coating systems |
| US9166126B2 (en) | 2011-01-31 | 2015-10-20 | Cree, Inc. | Conformally coated light emitting devices and methods for providing the same |
| US9263656B2 (en) | 2014-03-24 | 2016-02-16 | Stanley Electric Co., Ltd. | Semiconductor light-emitting device having double encapsulating structure |
| US9508904B2 (en) | 2011-01-31 | 2016-11-29 | Cree, Inc. | Structures and substrates for mounting optical elements and methods and devices for providing the same background |
| US9595806B2 (en) | 2015-03-09 | 2017-03-14 | Stanley Electric Co., Ltd. | Laser light-emitting apparatus |
| US9726340B2 (en) | 2014-06-23 | 2017-08-08 | Stanley Electric Co., Ltd. | Semiconductor light-emitting apparatus and vehicle headlight |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014082284A (en) * | 2012-10-15 | 2014-05-08 | Dow Corning Toray Co Ltd | Method for manufacturing integrated product including convex cured product and base material |
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2002
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Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006228589A (en) * | 2005-02-18 | 2006-08-31 | Minebea Co Ltd | Planar lighting device |
| US8618569B2 (en) | 2008-01-15 | 2013-12-31 | Cree, Inc. | Packaged light emitting diodes including phosphor coating and phosphor coating systems |
| US8940561B2 (en) | 2008-01-15 | 2015-01-27 | Cree, Inc. | Systems and methods for application of optical materials to optical elements |
| JP2009266863A (en) * | 2008-04-22 | 2009-11-12 | Minami Kk | Led light-emitting object |
| JP2013521652A (en) * | 2010-03-03 | 2013-06-10 | クリー インコーポレイテッド | System and method for applying an optical material to an optical element |
| EP2543060B1 (en) * | 2010-03-03 | 2021-06-16 | CreeLED, Inc. | Methods for application of optical materials to optical elements |
| US9166126B2 (en) | 2011-01-31 | 2015-10-20 | Cree, Inc. | Conformally coated light emitting devices and methods for providing the same |
| US9508904B2 (en) | 2011-01-31 | 2016-11-29 | Cree, Inc. | Structures and substrates for mounting optical elements and methods and devices for providing the same background |
| US9263656B2 (en) | 2014-03-24 | 2016-02-16 | Stanley Electric Co., Ltd. | Semiconductor light-emitting device having double encapsulating structure |
| US9726340B2 (en) | 2014-06-23 | 2017-08-08 | Stanley Electric Co., Ltd. | Semiconductor light-emitting apparatus and vehicle headlight |
| US9903542B2 (en) | 2014-11-11 | 2018-02-27 | Stanley Electric Co., Ltd. | Semiconductor light-emitting apparatus and vehicle headlight |
| US9595806B2 (en) | 2015-03-09 | 2017-03-14 | Stanley Electric Co., Ltd. | Laser light-emitting apparatus |
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