JP2003282862A5 - - Google Patents
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- Publication number
- JP2003282862A5 JP2003282862A5 JP2002080146A JP2002080146A JP2003282862A5 JP 2003282862 A5 JP2003282862 A5 JP 2003282862A5 JP 2002080146 A JP2002080146 A JP 2002080146A JP 2002080146 A JP2002080146 A JP 2002080146A JP 2003282862 A5 JP2003282862 A5 JP 2003282862A5
- Authority
- JP
- Japan
- Prior art keywords
- nitride semiconductor
- semiconductor layer
- layer
- semiconductor device
- nitride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002080146A JP4229625B2 (ja) | 2002-03-22 | 2002-03-22 | 窒化物半導体層とそれを含む窒化物半導体素子 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002080146A JP4229625B2 (ja) | 2002-03-22 | 2002-03-22 | 窒化物半導体層とそれを含む窒化物半導体素子 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2003282862A JP2003282862A (ja) | 2003-10-03 |
| JP2003282862A5 true JP2003282862A5 (zh) | 2005-05-19 |
| JP4229625B2 JP4229625B2 (ja) | 2009-02-25 |
Family
ID=29229300
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002080146A Expired - Lifetime JP4229625B2 (ja) | 2002-03-22 | 2002-03-22 | 窒化物半導体層とそれを含む窒化物半導体素子 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4229625B2 (zh) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005122232A1 (en) * | 2004-06-11 | 2005-12-22 | Ammono Sp. Z O.O. | High electron mobility transistor (hemt) made of layers of group xiii element nitrides and manufacturing method thereof. |
| US8927959B2 (en) | 2010-06-18 | 2015-01-06 | Sensor Electronic Technology, Inc. | Deep ultraviolet light emitting diode |
| US9806226B2 (en) | 2010-06-18 | 2017-10-31 | Sensor Electronic Technology, Inc. | Deep ultraviolet light emitting diode |
| US8907322B2 (en) * | 2010-06-18 | 2014-12-09 | Sensor Electronic Technology, Inc. | Deep ultraviolet light emitting diode |
| CN107615602B (zh) * | 2015-06-08 | 2020-05-01 | 松下知识产权经营株式会社 | 发光元件 |
| JPWO2022208868A1 (zh) * | 2021-04-02 | 2022-10-06 |
-
2002
- 2002-03-22 JP JP2002080146A patent/JP4229625B2/ja not_active Expired - Lifetime
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