JP2003282693A - Electrostatic chuck - Google Patents
Electrostatic chuckInfo
- Publication number
- JP2003282693A JP2003282693A JP2002087933A JP2002087933A JP2003282693A JP 2003282693 A JP2003282693 A JP 2003282693A JP 2002087933 A JP2002087933 A JP 2002087933A JP 2002087933 A JP2002087933 A JP 2002087933A JP 2003282693 A JP2003282693 A JP 2003282693A
- Authority
- JP
- Japan
- Prior art keywords
- electrostatic chuck
- dielectric layer
- adjusting component
- resistivity
- tio
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000007751 thermal spraying Methods 0.000 claims abstract description 23
- 229910052751 metal Inorganic materials 0.000 claims abstract description 15
- 239000002184 metal Substances 0.000 claims abstract description 15
- 230000000737 periodic effect Effects 0.000 claims abstract description 13
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 20
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 11
- 238000007750 plasma spraying Methods 0.000 claims description 7
- 230000003746 surface roughness Effects 0.000 claims description 4
- 238000007789 sealing Methods 0.000 claims description 3
- 239000012212 insulator Substances 0.000 claims description 2
- 239000007921 spray Substances 0.000 abstract description 8
- 239000004615 ingredient Substances 0.000 abstract 3
- 239000000463 material Substances 0.000 description 13
- 238000001179 sorption measurement Methods 0.000 description 10
- 239000000919 ceramic Substances 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 8
- 239000011521 glass Substances 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 4
- 239000002131 composite material Substances 0.000 description 4
- 239000004973 liquid crystal related substance Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 230000006837 decompression Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000011812 mixed powder Substances 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- -1 In the same manner Substances 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 239000003463 adsorbent Substances 0.000 description 1
- LFYJSSARVMHQJB-QIXNEVBVSA-N bakuchiol Chemical compound CC(C)=CCC[C@@](C)(C=C)\C=C\C1=CC=C(O)C=C1 LFYJSSARVMHQJB-QIXNEVBVSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 238000005469 granulation Methods 0.000 description 1
- 230000003179 granulation Effects 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Coating By Spraying Or Casting (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、静電チャックに関
し、特に、大型の被吸着物の支持固定に適した静電チャ
ックに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electrostatic chuck, and more particularly to an electrostatic chuck suitable for supporting and fixing a large object to be attracted.
【０００２】[0002]
【従来の技術】液晶ディスプレー等の製造過程における
薄膜形成またはドライエッチング工程においては、ガラ
ス基板等の平板状の被処理体に所要の成膜処理またはエ
ッチング処理を施すために、被処理体を載置する載置台
上にウエハを確実に密着させる必要がある。このような
要求を満たす保持機構として、静電作用を利用して被処
理体を載置台上に密着・保持する静電チャックが広く用
いられている。2. Description of the Related Art In a thin film forming process or a dry etching process in a manufacturing process of a liquid crystal display or the like, an object to be processed is placed on a flat object such as a glass substrate in order to perform a required film forming process or etching process. It is necessary to securely bring the wafer into close contact with the mounting table on which it is placed. As a holding mechanism that meets such requirements, an electrostatic chuck that uses an electrostatic action to bring an object to be processed into close contact with and holding it on a mounting table is widely used.
【０００３】このような液晶ディスプレーの製造プロセ
スにおいては、フッ素系ガス、塩素系ガス等のハロゲン
系腐食ガス雰囲気あるいはそのプラズマ中で使用され
る。したがって、静電チャックの誘電体層としては、従
来、耐腐食性が高いアルミナ等のセラミックスが用いら
れている。このような静電チャックは、電極および被吸
着体に誘起された電荷の間に発生する静電吸着力（クー
ロン力）を用いており、高い吸着力を得るために誘電体
層を極力薄くする必要がある。In the manufacturing process of such a liquid crystal display, it is used in an atmosphere of a halogen-based corrosive gas such as a fluorine-based gas or a chlorine-based gas, or in its plasma. Therefore, as the dielectric layer of the electrostatic chuck, ceramics such as alumina having high corrosion resistance has been conventionally used. Such an electrostatic chuck uses an electrostatic attraction force (Coulomb force) generated between electric charges induced in an electrode and an object to be attracted, and the dielectric layer is made as thin as possible to obtain a high attraction force. There is a need.
【０００４】このような静電チャックとしては、表面に
絶縁層が形成された基台上に、金属電極を形成し、その
上にアルミナ等のセラミック粉末をプラズマ溶射するこ
とによって誘電体層を被覆して構成されるものが知られ
ている。これにより、静電チャックの誘電体層を少ない
工程で薄く製造することができる。In such an electrostatic chuck, a metal electrode is formed on a base having an insulating layer formed on the surface thereof, and a ceramic layer of alumina or the like is plasma-sprayed on the base to cover the dielectric layer. It is known that it is configured. As a result, the dielectric layer of the electrostatic chuck can be thinly manufactured in a small number of steps.
【０００５】一方、誘電体層に多少導電性をもたせれ
ば、誘電体層中での電荷の移動を生じさせることにより
ジョンセンラーベック力が生じ、より高い吸着力が得ら
れることから、誘電体層として主成分のアルミナに酸化
チタンを含有させて導電性をもたせたセラミックスを用
いることが提案されている。On the other hand, if the dielectric layer is made slightly conductive, the Johnsen-Rahbek force is generated by the movement of charges in the dielectric layer, and a higher adsorption force is obtained. It has been proposed to use, as the body layer, a ceramic obtained by adding titanium oxide to alumina as a main component to give conductivity.
【０００６】このような誘電体層は、従来、減圧プラズ
マ溶射により製造することにより、安定して例えば１０
１０Ω・ｃｍ程度の低い体積抵抗率を得ることができ、
これにより安定して高い吸着力の静電チャックが得られ
る。Conventionally, such a dielectric layer is stably manufactured, for example, at a pressure of 10
It is possible to obtain a low volume resistivity of about 10 Ω · cm,
As a result, an electrostatic chuck having a stable and high attraction force can be obtained.
【０００７】[0007]
【発明が解決しようとする課題】しかしながら、近時、
被処理体である液晶ディスプレー用のガラス基板が益々
大型化しており、減圧プラズマ溶射装置の減圧チャンバ
ーがガラス基板の大型化に対応することができなくなっ
ている。However, in recent years,
The glass substrates for liquid crystal displays, which are the objects to be processed, are becoming larger and larger, and the decompression chamber of the decompression plasma spraying device cannot cope with the enlargement of the glass substrates.
【０００８】このため、大気雰囲気でのプラズマ溶射に
よりＡｌ２Ｏ３−ＴｉＯ２系の誘電体層を製造すること
が試みられているが、この場合には、減圧プラズマ溶射
の場合に体積抵抗率が１０１０Ω・ｃｍであったもので
も１０１２Ω・ｃｍ程度に上昇するという不都合が生じ
る。このような不都合を防止するため、ＴｉＯ２の量を
増加することが試みられているが、その場合にはリーク
電流が流れやすくなり、誘電体層の耐電圧特性が劣化す
るという問題がある。また、Ａｌ２Ｏ３−ＴｉＯ２系の
誘電体層を大気雰囲気でのプラズマ溶射により製造する
場合には、体積抵抗率のばらつきが大きく、ひいては吸
着力のばらつきが大きくなるという問題点もある。For this reason, it has been attempted to produce an Al 2 O 3 --TiO 2 system dielectric layer by plasma spraying in an air atmosphere. In this case, the volume resistivity in the case of low pressure plasma spraying is attempted. Even if the value is 10 10 Ω · cm, there is a disadvantage that the value rises to about 10 12 Ω · cm. In order to prevent such an inconvenience, it has been attempted to increase the amount of TiO 2 , but in that case, there is a problem that a leak current easily flows and the withstand voltage characteristic of the dielectric layer deteriorates. Further, when the Al 2 O 3 —TiO 2 -based dielectric layer is manufactured by plasma spraying in the air atmosphere, there is a problem that the volume resistivity varies greatly and the adsorption force also varies significantly.
【０００９】本発明はかかる事情に鑑みてなされたもの
であって、大気雰囲気での溶射により、耐電圧を低下さ
せることなく所望の低い体積抵抗率を安定して得ること
ができる誘電体層を有し、安定した吸着力を有する静電
チャックを提供することを目的とする。The present invention has been made in view of such circumstances, and provides a dielectric layer capable of stably obtaining a desired low volume resistivity without lowering a withstand voltage by thermal spraying in an air atmosphere. An object of the present invention is to provide an electrostatic chuck that has a stable adsorption force.
【００１０】[0010]
【課題を解決するための手段】本発明者等は、上記課題
を解決すべく鋭意研究した結果、誘電体層の抵抗率調整
成分として、ＴｉＯ２のみならず、さらに周期律表５ａ
族金属を添加することにより、大気雰囲気での溶射を行
ってもＴｉＯ２を増加させることなく安定して所望の低
い体積抵抗率を得ることができ、また体積抵抗率のばら
つきも小さいことを見出し、本発明を完成させた。The inventors of the present invention have conducted extensive studies to solve the above problems, and as a result, not only TiO 2 but also the periodic table 5a is used as a resistivity adjusting component of the dielectric layer.
It has been found that by adding a group metal, a desired low volume resistivity can be stably obtained without increasing TiO 2 even when performing thermal spraying in the air atmosphere, and variation in volume resistivity is small. The present invention has been completed.
【００１１】すなわち、本発明は、少なくともその表面
が絶縁体からなる基台と、該基台の上に形成された電極
層と、大気雰囲気での溶射により前記電極層上に形成さ
れた誘電体層とを備えた静電チャックであって、前記誘
電体層は、実質的に主成分のＡｌ２Ｏ３と抵抗率調整成
分とからなり、前記抵抗率調整成分は、実質的に主成分
のＴｉＯ２と周期律表５ａ族金属とからなることを特徴
とする静電チャックを提供ものである。That is, according to the present invention, a base having at least its surface made of an insulating material, an electrode layer formed on the base, and a dielectric formed on the electrode layer by thermal spraying in an air atmosphere. An electrostatic chuck comprising a layer, wherein the dielectric layer is substantially composed of Al 2 O 3 as a main component and a resistivity adjusting component, and the resistivity adjusting component is substantially a main component. An electrostatic chuck comprising TiO 2 and a metal of Group 5a of the periodic table.
【００１２】このような構成において、前記抵抗率調整
成分は、周期律表５ａ族金属を酸化物換算でＴｉＯ２に
対して０．０１〜１０ｍｏｌ％含有することが好まし
い。また、前記誘電体層の厚さが５０〜５００μｍであ
ることが好ましい。さらに、前記誘電体層は、溶射後に
封孔処理されており、かつ、中心線表面粗さが１．０μ
ｍ以下に研磨加工されたものであることが好ましい。さ
らにまた、前記誘電体層は、大気プラズマ溶射法により
形成されたものであることが好ましい。In such a constitution, it is preferable that the resistivity adjusting component contains a metal of Group 5a of the periodic table in an amount of 0.01 to 10 mol% with respect to TiO 2 in terms of oxide. The thickness of the dielectric layer is preferably 50 to 500 μm. Further, the dielectric layer is subjected to sealing treatment after thermal spraying and has a center line surface roughness of 1.0 μm.
It is preferably polished to m or less. Furthermore, it is preferable that the dielectric layer is formed by an atmospheric plasma spraying method.
【００１３】[0013]
【発明の実施の形態】以下、添付図面を参照して、本発
明の実施の形態について説明する。図１は、本発明の一
実施形態に係る静電チャックを示す断面図である。BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the accompanying drawings. FIG. 1 is a sectional view showing an electrostatic chuck according to an embodiment of the present invention.
【００１４】図１の静電チャックは、基台２と、基台２
の上に形成された電極層３と、電極層３の上に形成さ
れ、その表面に被吸着体１０を吸着する誘電体層４とを
有している。被吸着体としては液晶ディスプレー用のガ
ラス基板や半導体ウエハが例示される。The electrostatic chuck of FIG. 1 has a base 2 and a base 2.
And the dielectric layer 4 formed on the electrode layer 3 and adsorbing the adsorbed body 10 on the surface thereof. A glass substrate for a liquid crystal display or a semiconductor wafer is exemplified as the adherend.
【００１５】基台２は、基材１１と、基材１１の上に形
成された下地層１２と、下地層１２の上に形成された絶
縁層１３とを有している。基材１１の材料は特に限定さ
れないが、ＳｉＣ−Ａｌ等の金属−セラミックス複合材
料が好ましい。このような金属セラミックス複合材料
は、軽量かつ高強度であり、熱膨張係数が低いという利
点がある。下地層１２は金属からなり、好ましくは溶射
で形成される。絶縁層１３はＡｌ２Ｏ３等の絶縁体セラ
ミックスからなり、好ましくは大気雰囲気での溶射で形
成される。絶縁層１３が薄い場合には、下地層１２を省
略してもよい。The base 2 has a base material 11, a base layer 12 formed on the base material 11, and an insulating layer 13 formed on the base layer 12. The material of the base material 11 is not particularly limited, but a metal-ceramic composite material such as SiC-Al is preferable. Such a metal-ceramic composite material is advantageous in that it is lightweight, has high strength, and has a low coefficient of thermal expansion. The underlayer 12 is made of metal and is preferably formed by thermal spraying. The insulating layer 13 is made of insulating ceramics such as Al 2 O 3 and is preferably formed by thermal spraying in an air atmosphere. When the insulating layer 13 is thin, the base layer 12 may be omitted.
【００１６】電極層３は、例えばＮｉ、Ｗからなり、基
台２の絶縁層１３上に、好ましくは大気雰囲気での溶射
により形成される。The electrode layer 3 is made of, for example, Ni or W, and is formed on the insulating layer 13 of the base 2 preferably by thermal spraying in an air atmosphere.
【００１７】誘電体層４は、大気雰囲気での溶射により
電極層３上に形成される。この誘電体層４は、実質的に
主成分のＡｌ２Ｏ３と抵抗率調整成分とからなり、この
抵抗率調整成分は、実質的に主成分のＴｉＯ２と周期律
表５ａ族金属とからなる。このように、抵抗率調整成分
として周期律表５ａ族金属を添加することにより、大気
雰囲気での溶射においても安定して低い体積抵抗率を得
ることができる。この抵抗率調整成分は、周期律表５ａ
族金属を酸化物換算でＴｉＯ２に対して０．０１〜１０
ｍｏｌ％含有することが好ましい。The dielectric layer 4 is formed on the electrode layer 3 by thermal spraying in the air atmosphere. The dielectric layer 4 is substantially composed of Al 2 O 3 as a main component and a resistivity adjusting component, and the resistivity adjusting component is substantially composed of TiO 2 as a main component and a metal of Group 5a of the periodic table. Become. Thus, by adding the metal of Group 5a of the Periodic Table as the resistivity adjusting component, a low volume resistivity can be stably obtained even in the thermal spraying in the air atmosphere. This resistivity adjusting component is the periodic table 5a.
0.01 to 10 with respect to TiO 2 in terms of oxide of group metal
It is preferable to contain it by mol%.
【００１８】周期律表５ａ族金属としては、Ｎｂ、Ｓ
ｂ、Ｔａが好適であり、これらのうち少なくとも１種を
用いることができる。これらの中ではＮｂが特に好まし
く、Ｎｂを単独で抵抗率調整剤として有効に機能する。The metals in Group 5a of the periodic table include Nb and S.
b and Ta are preferable, and at least one of them can be used. Of these, Nb is particularly preferable, and Nb alone functions effectively as a resistivity adjusting agent.
【００１９】抵抗率調整剤の量は、目標とする体積抵抗
率によって変化するものであり、その値に応じて適宜決
定されるが、２０ｍａｓｓ％を超えて添加すると耐電圧
特性が低下することから２０ｍａｓｓ％以下が好まし
い。The amount of the resistivity adjusting agent varies depending on the target volume resistivity, and is appropriately determined according to the value. However, if the amount is more than 20 mass%, the withstand voltage characteristic deteriorates. It is preferably 20 mass% or less.
【００２０】誘電体層４の厚さは５０〜５００μｍが好
ましい。５０μｍより薄くなると耐電圧特性が低くなる
傾向にあり、５００μｍを超えると吸着力が低下する傾
向にある。特に、厚さが３００μｍ付近の場合には、ク
ーロン力とジョンセン・ラーベック力の両方が有効に作
用してより大きな吸着力を得ることができる。The thickness of the dielectric layer 4 is preferably 50 to 500 μm. When the thickness is less than 50 μm, the withstand voltage characteristic tends to deteriorate, and when it exceeds 500 μm, the adsorption force tends to decrease. In particular, when the thickness is around 300 μm, both Coulomb force and Johnsen-Rahbek force effectively act and a larger attraction force can be obtained.
【００２１】この誘電体層４は、溶射後に有機材料また
は無機材料で封孔処理されることが好ましく、中心線表
面粗さが１．０μｍ以下に研磨加工されることが好まし
い。封孔処理することにより耐電圧をより高くすること
ができる。また、中心線表面粗さが１．０μｍ以下にな
るように研磨加工することにより、被吸着体の吸着力を
高く維持することができる。The dielectric layer 4 is preferably sealed with an organic material or an inorganic material after thermal spraying, and is preferably polished to have a center line surface roughness of 1.0 μm or less. The withstand voltage can be further increased by performing the sealing treatment. Further, by performing polishing processing so that the center line surface roughness becomes 1.0 μm or less, it is possible to maintain a high suction force of the suction target.
【００２２】誘電体層４を形成する際の溶射処理は、大
気雰囲気中で行う溶射処理であればその方法は問わない
が、プラズマ溶射処理が好ましい。The thermal spraying process for forming the dielectric layer 4 may be any method as long as it is a thermal spraying process performed in an air atmosphere, but a plasma thermal spraying process is preferable.
【００２３】誘電体層４を溶射により形成する際の溶射
材は、以下のように製造することが好ましい。まず、Ｔ
ｉＯ２粉末に対して、好ましくは酸化物換算で０．０１
〜１０ｍｏｌ％の周期律表５ａ族金属、好ましくはＮ
ｂ、Ｓｂ、Ｔａの少なくとも１種（Ｎｂ２Ｏ５、Ｓｂ２
Ｏ５、Ｔａ２Ｏ５のうち少なくとも１種）を加えて混
合、乾燥した後、還元雰囲気中で１０００〜１４００℃
で焼成することによって混合粉末を作製する。この混合
粉末を抵抗率調整成分としてＡｌ２Ｏ３に対して所定量
添加して溶射材とする。The thermal spray material for forming the dielectric layer 4 by thermal spraying is preferably manufactured as follows. First, T
It is preferably 0.01 in terms of oxide based on the iO 2 powder.
10 mol% of Group 5a metal of the periodic table, preferably N
at least one of b, Sb, and Ta (Nb 2 O 5 , Sb 2
At least one of O 5 and Ta 2 O 5 is added, mixed and dried, and then 1000 to 1400 ° C. in a reducing atmosphere.
A mixed powder is prepared by firing at. A predetermined amount of this mixed powder is added to Al 2 O 3 as a resistivity adjusting component to obtain a thermal spray material.
【００２４】次に、以上のように構成される静電チャッ
ク１の好ましい製造方法について説明する。まず、金属
−セラミックス複合材料からなる基材１１に、大気雰囲
気中の溶射処理により金属材料からなる下地層１２およ
びＡｌ２Ｏ３等のセラミックスからなる絶縁層１３を順
に形成して基台２を作成する。Next, a preferred method of manufacturing the electrostatic chuck 1 having the above-described structure will be described. First, an underlayer 12 made of a metal material and an insulating layer 13 made of ceramics such as Al 2 O 3 are sequentially formed on a base material 11 made of a metal-ceramic composite material by a thermal spraying treatment in an air atmosphere to form the base 2. create.
【００２５】続いて、この基台２の表面、すなわち絶縁
層１３の上に電極層３を大気雰囲気中の溶射により形成
する。引き続き、この電極層３の上に上記のようにして
製造された誘電体層形成用の溶射材を用いて大気雰囲気
中で溶射し誘電体層４を形成する。Subsequently, the electrode layer 3 is formed on the surface of the base 2, that is, on the insulating layer 13 by thermal spraying in the atmosphere. Subsequently, the dielectric layer 4 is formed on the electrode layer 3 by thermal spraying in the atmosphere using the thermal spray material for forming the dielectric layer manufactured as described above.
【００２６】このような静電チャック１は、誘電体層４
の抵抗率調整成分としてＴｉＯ２の他に周期律表５ａ族
金属が適量含有されていることにより、大気雰囲気での
溶射によってもＴｉＯ２を増加することなく所望の低い
体積抵抗率を安定して得ることができ、高い耐電圧を確
保しつつ安定した吸着力を得ることができる。Such an electrostatic chuck 1 has a dielectric layer 4
Since a suitable amount of the Group 5a metal of the periodic table is contained in addition to TiO 2 as the resistivity adjusting component of, the desired low volume resistivity can be stabilized without increasing TiO 2 even by thermal spraying in the air atmosphere. It is possible to obtain a stable adsorption force while ensuring a high withstand voltage.
【００２７】なお、本発明は上記実施形態に限定される
ことなく種々変形可能である。上記実施形態では、単極
型の静電チャックを例示したが、これに限らず双極型で
あっても構わない。基台として基材の上に絶縁層を形成
したものを用いたが、全体が絶縁体からなる基台を用い
てもよい。The present invention is not limited to the above embodiment and can be variously modified. In the above embodiment, the monopolar type electrostatic chuck is illustrated, but the invention is not limited to this, and a bipolar type electrostatic chuck may be used. Although a base having an insulating layer formed on the base is used as the base, a base made entirely of an insulator may be used.
【００２８】[0028]
【実施例】以下、本発明の実施例について説明する。金
属−セラミックス複合材料（７０ｖｏｌ％ＳｉＣ−３０
ｖｏｌ％Ａｌ）からなる基材の上に、大気雰囲気でのプ
ラズマ溶射により厚さ５０μｍのＡｌ下地層および厚さ
３００μｍのＡｌ２Ｏ３絶縁層を順に形成し基台を製造
した。その上に大気雰囲気でのプラズマ照射によりＮｉ
電極層を５０μｍの厚さに形成し、さらにその上に大気
雰囲気でのプラズマ照射により表１に示す種々の誘電体
層を３００μｍの厚さに形成した。EXAMPLES Examples of the present invention will be described below. Metal-ceramics composite material (70vol% SiC-30
A base layer was manufactured by sequentially forming an Al underlayer having a thickness of 50 μm and an Al 2 O 3 insulating layer having a thickness of 300 μm on a base material made of vol% Al) by plasma spraying in an air atmosphere. On top of that, Ni was applied by plasma irradiation in the atmosphere
An electrode layer was formed to a thickness of 50 μm, and various dielectric layers shown in Table 1 were formed thereon to a thickness of 300 μm by plasma irradiation in the air atmosphere.
【００２９】誘電体層の溶射材としては、Ａｌ２Ｏ３粉
末にＴｉＯ２を主体とする抵抗率調整成分を混合したも
のを用いた。実施例１〜１２における誘電体層の溶射材
は、以下のようにして製造した。まず、所定割合のＮｂ
２Ｏ５、Ｓｂ２Ｏ５、またはＴａ２Ｏ５をＴｉＯ２に添
加し、これらをエタノールおよびジルコニアボールを装
入したボールミルで粉砕混合した。その後、混合試料を
ロータリーエバポレーターで乾燥し、還元雰囲気で１１
００〜１４００℃で焼成し、抵抗率調整成分とした。次
いで、Ａｌ２Ｏ３に対して２．５〜１０ｍａｓｓ％の抵
抗率調整成分を添加し、これらをイオン交換水およびジ
ルコニアボールを装入したボールミルで混合してスラリ
ーとし、適量の有機バインダーを添加してモービルマイ
ナー型のスプレーを用いて造粒し、溶射材とした。一
方、比較例１，２における誘電体層の溶射材は、Ａｌ２
Ｏ３粉末に抵抗率調整成分としてのＴｉＯ２を添加し、
同様にスラリー調整および造粒を行って製造した。As the thermal spraying material for the dielectric layer, a mixture of Al 2 O 3 powder and a resistivity adjusting component mainly composed of TiO 2 was used. The thermal spray material for the dielectric layer in Examples 1 to 12 was manufactured as follows. First, a predetermined ratio of Nb
2 O 5 , Sb 2 O 5 , or Ta 2 O 5 was added to TiO 2 and they were ground and mixed in a ball mill charged with ethanol and zirconia balls. After that, the mixed sample is dried by a rotary evaporator, and is dried in a reducing atmosphere.
It was fired at 00 to 1400 ° C and used as a resistivity adjusting component. Next, a resistivity adjusting component of 2.5 to 10 mass% is added to Al 2 O 3 , and these are mixed by a ball mill charged with ion-exchanged water and zirconia balls to form a slurry, and an appropriate amount of an organic binder is added. Then, it was granulated using a mobile minor type spray to obtain a thermal spray material. On the other hand, the thermal spray material of the dielectric layer in Comparative Examples 1 and 2 was Al 2
TiO 2 as a resistivity adjusting component was added to O 3 powder,
In the same manner, slurry preparation and granulation were performed to manufacture.
【００３０】体積抵抗率は、このように製造された静電
チャック（２０９×１５７×１０ｍｍ）に被吸着体であ
る裏面にＩＴＯ膜を形成したガラス基板（７．５ｍ
ｍ□）を載せ、電圧を印加し、そのリーク電流から算出
した。The volume resistivity is determined by measuring the glass substrate (7.5 m) having an ITO film formed on the back surface of the electrostatic chuck (209 × 157 × 10 mm) manufactured as described above, which is an object to be adsorbed.
m □ ) was placed, a voltage was applied, and the leakage current was calculated.
【００３１】その際のリーク電流値、抵抗値、誘電体層
の体積抵抗率、ｌｏｇρ、体積抵抗率のばらつきを表１
に併記する。なお、体積抵抗率のばらつきは、１０回測
定したときの最大値から最小値を引いた値を平均値で割
った値を百分率表示したものである。Table 1 shows the variations of the leak current value, the resistance value, the volume resistivity of the dielectric layer, log ρ, and the volume resistivity at that time.
Also described in. The variation of the volume resistivity is a value obtained by dividing a value obtained by subtracting a minimum value from a maximum value of 10 times measurement by an average value and expressing it as a percentage.
【００３２】表１に示すように、実施例１〜１２は、誘
電体層を大気雰囲気中で製造したにも拘わらず、抵抗調
整成分の量に応じて、適切な体積抵抗率が得られ、体積
抵抗率のばらつきも小さかった。特に、抵抗率調整成分
中の周期律表５ａ族金属の酸化物の割合が０．１０ｍｏ
ｌ％以上で、かつ抵抗率調整成分の量が５ｍａｓｓ％以
上の場合には、１０１０Ω．ｃｍオーダー以下の低い体
積抵抗率が得られた。As shown in Table 1, in Examples 1 to 12, although the dielectric layer was manufactured in the atmosphere, an appropriate volume resistivity was obtained according to the amount of the resistance adjusting component. The variation in volume resistivity was also small. In particular, the ratio of the metal oxide of Group 5a of the periodic table in the resistivity adjusting component is 0.10 mo.
1% or more and the amount of the resistivity adjusting component is 5 mass% or more, 10 10 Ω. A low volume resistivity on the order of cm or less was obtained.
【００３３】これに対して、抵抗率調整成分としてＴｉ
Ｏ２のみを添加した比較例のうち、比較例１は、抵抗率
調整成分を５ｍａｓｓ％添加したにも拘わらず、体積抵
抗率が２．６×１０１２Ω・ｃｍと高い値になり体積抵
抗率のばらつきも大きかった。また、比較例２は、Ｔｉ
Ｏ２のみからなる抵抗率調整成分を２０ｍａｓｓ％添加
して体積抵抗率を１０１０Ω・ｃｍにしたが、体積抵抗
率のばらつきが大きいのみならず、耐電圧特性が他のも
のが５ｋＶ以上であるのに対し２ｋＶ以下と低いことが
確認された。On the other hand, Ti is used as the resistivity adjusting component.
Among Comparative Examples in which only O 2 was added, Comparative Example 1 had a volume resistivity as high as 2.6 × 10 12 Ω · cm, even though the resistivity adjusting component was added in an amount of 5 mass%. The variation in the rate was also large. Further, in Comparative Example 2, Ti
The volume resistivity was set to 10 10 Ω · cm by adding 20 mass% of the resistivity adjusting component consisting of O 2 only. However, not only the variation in volume resistivity was large, but also the withstand voltage characteristics were 5 kV or more. However, it was confirmed to be as low as 2 kV or less.
【００３４】[0034]
【表１】 [Table 1]
【００３５】次に、表１の実施例３の静電チャック（誘
電体層の抵抗率調整成分が５ｍａｓｓ％でその中のＮｂ
２Ｏ５が０．１ｍｏｌ％）と比較例１の静電チャック
（誘電体層の抵抗率調整成分が５ｍａｓｓ％でＴｉＯ２
のみ）の吸着力を比較した。Next, the electrostatic chuck of Example 3 shown in Table 1 (where the dielectric layer has a resistivity adjusting component of 5 mass% and Nb therein)
2 O 5 is 0.1 mol% and the electrostatic chuck of Comparative Example 1 (the dielectric layer has a resistivity adjusting component of 5 mass% and TiO 2
Only) was compared.
【００３６】吸着試験は以下の手順で行った。まず、静
電チャックを真空チャンバー内に設置し、静電チャック
表面に被吸着体であるガラス基板を設置する。次に、静
電チャックの電極層に電圧を印加し、チャンバー内を真
空に排気する。その後、静電チャックの裏面からＨｅガ
スを導入し、その圧力をキャパシタンスマノメータによ
り測定し、ガラス基板が剥離した圧力を測定し、その値
から吸着力を求めた。The adsorption test was conducted according to the following procedure. First, an electrostatic chuck is set in a vacuum chamber, and a glass substrate, which is an object to be attracted, is set on the surface of the electrostatic chuck. Next, a voltage is applied to the electrode layer of the electrostatic chuck, and the inside of the chamber is evacuated to vacuum. Then, He gas was introduced from the back surface of the electrostatic chuck, the pressure was measured by a capacitance manometer, the pressure at which the glass substrate was peeled off was measured, and the adsorption force was determined from the value.
【００３７】その結果を図２に示す。図２に示すよう
に、抵抗率調整成分としてＮｂ２Ｏ５を用いた実施例３
のほうが、抵抗率調整成分としてＴｉＯ２のみの比較例
１よりも吸着力が高いことが確認された。また、吸着力
のばらつきも比較例１よりも実施例３のほうが小さいこ
とが確認された。The results are shown in FIG. As shown in FIG. 2, Example 3 using Nb 2 O 5 as a resistivity adjusting component
It was confirmed that the adsorption force of the above was higher than that of Comparative Example 1 in which only TiO 2 was used as the resistivity adjusting component. It was also confirmed that the variation in the adsorption force was smaller in Example 3 than in Comparative Example 1.
【００３８】[0038]
【発明の効果】以上説明したように、本発明によれば、
誘電体層を主成分のＡｌ２Ｏ３と抵抗率調整成分とで構
成し、抵抗率調整成分を主成分のＴｉＯ２と周期律表５
ａ族金属とで構成することにより、大気雰囲気での溶射
によってもＴｉＯ２を増加することなく所望の低い体積
抵抗率を安定して得ることができ、高い耐電圧を確保し
つつ安定した吸着力を得ることができる。As described above, according to the present invention,
The dielectric layer is composed of Al 2 O 3 as a main component and a resistivity adjusting component, and the resistivity adjusting component is made of TiO 2 as a main component and the periodic table 5.
By using a group a metal, a desired low volume resistivity can be stably obtained without increasing TiO 2 even by thermal spraying in the air atmosphere, and a stable adsorption force can be obtained while ensuring a high withstand voltage. Can be obtained.
【図１】本発明の一実施形態に係る静電チャックを示す
断面図。FIG. 1 is a sectional view showing an electrostatic chuck according to an embodiment of the present invention.
【図２】実施例３と比較例１の静電チャックの吸着力を
比較して示すグラフ。FIG. 2 is a graph showing a comparison of the attraction forces of the electrostatic chucks of Example 3 and Comparative Example 1.
１……静電チャック ２……基台 ３……電極層 ４……誘電体層 １０……被吸着体 1 ... Electrostatic chuck 2 ... base 3 ... Electrode layer 4 ... Dielectric layer 10 ... Adsorbent
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 ＦＩ テーマコート゛(参考） Ｃ２３Ｃ 4/18 Ｃ２３Ｃ 4/18 (72)発明者 梅木 亜希子 千葉県佐倉市大作二丁目４番２号 太平洋 セメント株式会社中央研究所内 Ｆターム(参考） 4K031 AA08 AB03 AB07 AB09 CB07 CB14 CB43 DA04 FA04 FA05 5F031 CA05 HA02 HA03 HA16 PA30─────────────────────────────────────────────────── ─── Continuation of front page (51) Int.Cl. 7 Identification code FI theme code (reference) C23C 4/18 C23C 4/18 (72) Inventor Akiko Umeki 2-4-2 Daisaku Sakura, Chiba Prefecture Pacific F-term in Central Research Institute of Cement Co., Ltd. (reference) 4K031 AA08 AB03 AB07 AB09 CB07 CB14 CB43 DA04 FA04 FA05 5F031 CA05 HA02 HA03 HA16 PA30
Claims (5)
台と、該基台の上に形成された電極層と、大気雰囲気で
の溶射により前記電極層上に形成された誘電体層とを備
えた静電チャックであって、 前記誘電体層は、実質的に主成分のＡｌ２Ｏ３と抵抗率
調整成分とからなり、 前記抵抗率調整成分は、実質的に主成分のＴｉＯ２と周
期律表５ａ族金属とからなることを特徴とする静電チャ
ック。1. A base having at least a surface thereof made of an insulator, an electrode layer formed on the base, and a dielectric layer formed on the electrode layer by thermal spraying in an air atmosphere. In the electrostatic chuck, the dielectric layer is substantially composed of Al 2 O 3 as a main component and a resistivity adjusting component, and the resistivity adjusting component is substantially composed of TiO 2 as a main component and a period. An electrostatic chuck comprising a Group 5a metal of the table.
金属を酸化物換算でＴｉＯ２に対して０．０１〜１０ｍ
ｏｌ％含有することを特徴とする請求項１に記載の静電
チャック。2. The resistivity adjusting component is 0.01 to 10 m with respect to TiO 2 in terms of oxide of a metal of Group 5a of the periodic table.
The electrostatic chuck according to claim 1, wherein the electrostatic chuck contains ol%.
であることを特徴とする請求項１または請求項２に記載
の静電チャック。3. The thickness of the dielectric layer is 50 to 500 μm.
The electrostatic chuck according to claim 1 or 2, wherein
ており、かつ、中心線表面粗さが１．０μｍ以下に研磨
加工されたものであることを特徴とする請求項１から請
求項３のいずれか１項に記載の静電チャック。4. The dielectric layer, which has been subjected to sealing treatment after thermal spraying and has been polished to have a center line surface roughness of 1.0 μm or less. Item 4. The electrostatic chuck according to any one of items 3.
より形成されたものであることを特徴とする請求項１か
ら請求項４のいずれか１項に記載の静電チャック。5. The electrostatic chuck according to claim 1, wherein the dielectric layer is formed by an atmospheric plasma spraying method.
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|---|---|---|---|
| JP2002087933A JP4510358B2 (en) | 2002-03-27 | 2002-03-27 | Electrostatic chuck and manufacturing method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002087933A JP4510358B2 (en) | 2002-03-27 | 2002-03-27 | Electrostatic chuck and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2003282693A true JP2003282693A (en) | 2003-10-03 |
| JP4510358B2 JP4510358B2 (en) | 2010-07-21 |
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ID=29233959
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|---|---|---|---|
| JP2002087933A Expired - Fee Related JP4510358B2 (en) | 2002-03-27 | 2002-03-27 | Electrostatic chuck and manufacturing method thereof |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005524247A (en) * | 2002-05-01 | 2005-08-11 | トレック・インコーポレーテッド | Advanced platen for electrostatic wafer clamping equipment |
| JP2006032461A (en) * | 2004-07-13 | 2006-02-02 | Canon Inc | Electrostatic attraction device and electron source manufacturing device |
| JP2010018853A (en) * | 2008-07-11 | 2010-01-28 | Taiheiyo Cement Corp | Thermally sprayed ceramic film and corrosion-resistant member using the same |
| KR20160075725A (en) | 2013-11-29 | 2016-06-29 | 가부시끼가이샤 도시바 | Plasma device part and manufacturing method therefor |
| JPWO2015080135A1 (en) * | 2013-11-29 | 2017-03-16 | 株式会社東芝 | Plasma device component and method of manufacturing the same |
-
2002
- 2002-03-27 JP JP2002087933A patent/JP4510358B2/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005524247A (en) * | 2002-05-01 | 2005-08-11 | トレック・インコーポレーテッド | Advanced platen for electrostatic wafer clamping equipment |
| JP2006032461A (en) * | 2004-07-13 | 2006-02-02 | Canon Inc | Electrostatic attraction device and electron source manufacturing device |
| JP2010018853A (en) * | 2008-07-11 | 2010-01-28 | Taiheiyo Cement Corp | Thermally sprayed ceramic film and corrosion-resistant member using the same |
| KR20160075725A (en) | 2013-11-29 | 2016-06-29 | 가부시끼가이샤 도시바 | Plasma device part and manufacturing method therefor |
| JPWO2015080134A1 (en) * | 2013-11-29 | 2017-03-16 | 株式会社東芝 | Plasma device component and method of manufacturing the same |
| JPWO2015080135A1 (en) * | 2013-11-29 | 2017-03-16 | 株式会社東芝 | Plasma device component and method of manufacturing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JP4510358B2 (en) | 2010-07-21 |
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