JP2003282561A - Manufacturing method of device and manufacturing apparatus of device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of device and a manufacturing apparatus of the device for enabling the simplification of a manufacturing steps and the symplification of the constitution of the apparatus and for manufacturing the device at a low cost when forming a contact hole in a multi-layered wiring device. <P>SOLUTION: When laminating a plurality of material layers by discharging ink from a droplet discharge head to a substrate P, a non-discharging region H is preset on a drain electrode 544, ink is discharged on a part other than non-discharging region of the drain electrode 544, and a second interlayer insulating layer 584 is formed on the drain electrode 544 and a first interlayer insulating layer 583. <P>COPYRIGHT: (C)2004,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a device manufacturing method and device manufacturing apparatus having a material layer laminated on a substrate.

[0002]

2. Description of the Related Art Conventionally, a photolithography method has been widely used as a method for manufacturing a device having a fine wiring pattern such as a semiconductor integrated circuit.
As disclosed in Japanese Patent No. 4671, Japanese Patent Laid-Open No. 2000-216330, and the like, attention is focused on a device manufacturing method using a droplet discharge method. The technique disclosed in the above publication forms a multilayer wiring device by stacking material layers on a substrate by discharging a fluid containing a pattern forming material from a droplet discharge head onto a pattern forming surface. Yes, it is very effective in that it can be used for small-lot production.

[0003]

By the way, a multilayer wiring device is a stack of a wiring pattern (conductive layer) and an insulating layer. However, in order to electrically connect different conductive layers, the insulating layer is not provided. A so-called contact hole is formed. By filling the contact hole with a conductive material, different conductive layers are electrically connected to each other.

Here, conventionally, in order to form a contact hole, the contact hole was formed by patterning the formed insulating layer based on a photolithography method. In this case, since the process for forming the contact hole has to be provided, the throughput is lowered, and the device configuration becomes large-scaled, resulting in an increase in cost.

The present invention has been made in view of the above circumstances, and when a contact hole is formed in a multilayer wiring device, the manufacturing process and the device configuration are simplified, and the device is manufactured at low cost. An object of the present invention is to provide a device manufacturing method and a device manufacturing apparatus capable of manufacturing the device.

[0006]

In order to solve the above-mentioned problems, a method of manufacturing a device according to the present invention is characterized in that the fluid is dropped onto a substrate from a dropping device capable of quantitatively dropping the fluid onto the substrate. In a method for manufacturing a device, which has a step of stacking a plurality of material layers on top, a first device formed on the substrate
A non-dripping region is set in advance on the upper surface of the material layer, and the fluid is dripped on a portion of the first material layer other than the non-dripping region, and the second material layer is formed on the upper layer of the first material layer. Is formed.

According to the present invention, when the second material layer is laminated on the first material layer, the position where the contact hole is to be formed is the non-dripping area, and the fluid is not dropped on this portion. Only by doing so, the contact hole can be easily formed without increasing the manufacturing process.

In this case, the dropping device includes a droplet discharging head (droplet discharging device). The droplet discharge head is a device capable of quantitatively discharging a fluid by a droplet discharge method, and for example, capable of quantitatively intermittently dropping a fluid (liquid material) of 1 to 300 nanograms.

By adopting the droplet discharge method as the method of stacking the material layers, it is possible to attach the fluid at an arbitrary position on the upper surface of the first material layer with an arbitrary thickness using inexpensive equipment.

As the droplet discharging method, even a piezo jet method in which a fluid is discharged by a change in volume of a piezoelectric element is a method in which a fluid is discharged by rapidly generating steam due to application of heat. May be.

The fluid is a medium having a viscosity capable of being discharged (dripping) from the nozzle of the droplet discharging head. It does not matter whether it is aqueous or oily. It is sufficient if it has fluidity (viscosity) capable of being ejected from a nozzle or the like, and even if a solid substance is mixed, it may be a fluid as a whole. Also,
The material contained in the fluid may be one that is heated to a temperature equal to or higher than the melting point and dissolved, or one that is stirred as fine particles in a solvent, in which a dye, a pigment or other functional material is added in addition to the solvent. Good. Further, the wiring pattern (electrical circuit) is a member that is formed by an electrical cooperative relationship between circuit elements, and has specific electrical characteristics and constant electrical characteristics. Also, the substrate refers to a flat substrate,
It may be a curved substrate. Furthermore, the hardness of the pattern forming surface does not need to be hard, and may be the surface of a flexible material such as film, paper, or rubber in addition to glass, plastic, and metal.

In this case, the first material layer is a conductive material layer, the second material layer is an insulating material layer, and after the second material layer is formed, the non-dripping area is formed. By filling the conductive material, the second material layer has a function as an interlayer insulating layer of the multilayer wiring pattern, and by filling the contact hole corresponding to the non-dripping region with the conductive material, different conductivity can be obtained. The conductive material layers can be electrically connected to each other, and a multilayer wiring device having desired performance can be manufactured.

In this case, before the dropping operation for forming the second material layer, the first material layer and the non-dripping layer are applied to the first material layer including the non-dripping region. By performing a surface treatment for controlling the affinity of the fluid for the region, for example, the conductive material can be brought into close contact with the contact hole corresponding to the non-dripping region, or the first material layer By surface-treating the entire surface, the second material layer can be formed smoothly.

Here, the surface treatment is a liquid repellent treatment (ink repellent treatment) or a lyophilic treatment (ink repellent treatment) for the first material layer and the non-dripping region, and is plasma, UV treatment, coupling or the like. Of surface treatment. The lyophilic process is a process that increases the adhesion of the ink to the treated surface.
On the other hand, the ink repellent treatment is a treatment for reducing the adhesion of the ink to the treated surface. Further, the affinity means that the contact angle with respect to the fluid is relatively small. On the other hand, the non-affinity means that the contact angle with respect to the fluid is relatively large.

The device manufacturing apparatus of the present invention is a device manufacturing apparatus equipped with a dropping device capable of quantitatively dropping a fluid onto a substrate, wherein the first material layer formed on the substrate in advance has a non-coated surface. It is characterized by comprising a control device that sets a dropping region and controls the dropping operation of the dropping device so as to drop the fluid on a portion of the first material layer other than the non-dripping region.

According to the present invention, when the fluid is dropped on the upper surface of the first material layer, the position where the contact hole is to be formed is a non-dripping region, and the fluid is not dropped on this portion. The contact hole can be easily formed without increasing the manufacturing process.

In this case, the dropping device includes a droplet discharging head, and by adopting the droplet discharging method as a method for laminating the material layers, it is possible to use an inexpensive facility and to place it at an arbitrary position on the upper surface of the first material layer. The thickness of the fluid can be applied.

[0018]

BEST MODE FOR CARRYING OUT THE INVENTION The device manufacturing apparatus and device manufacturing method of the present invention will be described below. FIG. 1 is a schematic perspective view showing an embodiment of the device manufacturing apparatus of the present invention. The device manufacturing apparatus of the present invention is a droplet discharging apparatus that manufactures a device by discharging (dropping) droplets from a droplet discharging head onto a substrate.

In FIG. 1, a device manufacturing apparatus (droplet discharging apparatus) IJ is provided between a base 12, a stage ST provided on the base 12 and supporting a substrate P, and interposed between the base 12 and the stage ST. , A first moving device (moving device) 14 that movably supports the stage ST, and a stage S.
A droplet discharge head 2 capable of discharging (dripping) ink (fluid) containing a predetermined material onto a substrate P supported by T.
0, a second moving device 16 that movably supports the droplet discharge head 20, and a control device CONT that controls the ink discharge operation of the droplet discharge head 20. Further, the device manufacturing apparatus IJ has an electronic balance (not shown) as a weight measuring device provided on the base 12, a capping unit 22, and a cleaning unit 24. In addition, the first moving device 14 and the second moving device 1
The operation of the device manufacturing apparatus IJ including
Controlled by NT.

Here, the entire device manufacturing apparatus (device manufacturing system) is provided with a plurality of droplet discharge devices IJ as shown in FIG. 1, and inks containing different materials from each droplet discharge device ( Fluid) is discharged. Then, of the plurality of droplet discharge devices of the plurality of groups, the first droplet discharge device discharges the ink containing the first material and then bake or dry the ink.
Next, the ink containing the second material is ejected from the second droplet ejecting device to the first material layer, and then the ink is baked or dried, and the same process is performed using a plurality of droplet ejecting devices. By doing so, a plurality of material layers are laminated on the substrate P to form a multilayer wiring pattern. In addition,
In the above-described configuration, one material is ejected from one droplet ejecting device, but one droplet ejecting device is provided with a plurality of droplet ejecting heads, and different or the same kind of fluid is supplied from each droplet ejecting head. Of course, it is also possible to adopt a structure for discharging.

The first moving device 14 is installed on the base 12 and is positioned along the Y direction. Second
The moving device 16 uses the columns 16A and 16A to form the base 1
It is attached upright with respect to 2, and is attached at the rear portion 12A of the base 12. Second moving device 1
The X direction (second direction) 6 is a direction orthogonal to the Y direction (first direction) of the first moving device 14. Here, the Y direction is a direction along the front portion 12B and the rear portion 12A of the base 12. On the other hand, the X direction is a direction along the left-right direction of the base 12 and is horizontal. Further, the Z direction is a direction perpendicular to the X direction and the Y direction.

The first moving device 14 is composed of, for example, a linear motor, and is provided with guide rails 40, 40, and a slider 42 movably provided along the guide rail 40. The slider 42 of the first moving device 14 of the linear motor type is the guide rail 40.
Can be positioned by moving in the Y direction.

Further, the slider 42 rotates around the Z axis (θZ).
The motor 44 is provided. The motor 44 is, for example, a direct drive motor, and the rotor of the motor 44 is fixed to the stage ST. As a result, by energizing the motor 44, the rotor and the stage ST are separated by θ.
The stage ST can be indexed (rotational index) by rotating along the Z direction. That is, the first moving device 14 can move the stage ST in the Y direction (first direction) and the θZ direction.

The stage ST holds the substrate P and positions it at a predetermined position. Further, the stage ST has a suction holding device 50, and when the suction holding device 50 operates, the substrate P is sucked and held on the stage ST through the hole 46A of the stage ST.

The second moving device 16 is composed of a linear motor, and is a column 16 fixed to the columns 16A and 16A.
B, a guide rail 62A supported by the column 16B, and a slider 60 movably supported in the X direction along the guide rail 62A. The slider 60 can be positioned along the guide rail 62A by moving in the X direction, and the droplet discharge head 20 is attached to the slider 60.

The droplet discharge head 20 has motors 62, 64, 66 and 68 as swing positioning devices.
When the motor 62 is operated, the droplet discharge head 20 can be vertically moved and positioned along the Z axis. This Z axis is X
It is a direction (vertical direction) orthogonal to each of the axis and the Y axis. When the motor 64 is operated, the droplet discharge head 20
Positioning is possible by swinging along the β direction around the Y axis. When the motor 66 is operated, the droplet discharge head 20
Positioning is possible by swinging in the γ direction around the X axis. When the motor 68 is operated, the droplet discharge head 20 can be positioned by swinging in the α direction around the Z axis. That is, the second moving device 16 moves the droplet discharge head 20 in the X direction (first
Direction) and the Z direction, and the droplet discharge head 20 is supported so as to be movable in the θX direction, the θY direction, and the θZ direction.

As described above, the droplet discharge head 20 of FIG.
Can be linearly moved in the Z-axis direction to be positioned on the slider 60, and can be positioned by being swung along α, β and γ, and the ink ejection surface 20P of the droplet ejection head 20 can be positioned.
Can accurately control the position or orientation of the substrate P on the stage ST side. A plurality of nozzles for ejecting ink are provided on the ink ejection surface 20P of the droplet ejection head 20.

FIG. 2 is an exploded perspective view showing the droplet discharge head 20. As shown in FIG. 2, the droplet discharge head 20 is
The nozzle plate 210 provided with the nozzles 211 and the pressure chamber substrate 220 provided with the vibration plate 230 are attached to the housing 25.
It is configured to fit in 0. This droplet discharge head 2
The main part structure of No. 0 has a structure in which the pressure chamber substrate 220 is sandwiched between the nozzle plate 210 and the vibration plate 230, as shown in the partial perspective view of the perspective view of FIG. Nozzle plate 21
No. 0 has a nozzle 211 formed at a position corresponding to the cavity (pressure chamber) 221 when bonded to the pressure chamber substrate 220. The pressure chamber substrate 220 includes
A plurality of cavities 221 are provided so that each can function as a pressure chamber by etching a silicon single crystal substrate or the like. Side walls (partition walls) 22 between the cavities 221
Separated by 2. Each cavity 221 has a supply port 22
It is connected to the reservoir 223, which is a common flow path, via No. 4. The diaphragm 230 is made of, for example, a thermal oxide film. The vibrating plate 230 is provided with an ink tank port 231 so that an arbitrary fluid can be supplied from a tank (fluid storage portion) (not shown) through a pipe (flow path). A piezoelectric element 240 is formed on the vibrating plate 230 at a position corresponding to the cavity 221. The piezoelectric element 240 has a structure in which a crystal of piezoelectric ceramics such as a PZT element is sandwiched between an upper electrode and a lower electrode (not shown). The piezoelectric element 240 is configured to be capable of causing a volume change in response to an ejection signal supplied from the control device CONT.

Ink (fluid) from the droplet discharge head 20
In order to eject, the control device CONT first supplies an ejection signal for ejecting the fluid to the droplet ejection head 20. The fluid has flown into the cavity 221 of the droplet discharge head 20 and is supplied with the discharge signal.
At 0, the piezoelectric element 240 causes a volume change due to the voltage applied between the upper electrode and the lower electrode. This volume change deforms the vibration plate 230 and causes the cavity 22
Change the volume of 1. As a result, the cavity 22
A droplet of the fluid is ejected from the first nozzle hole 211. The fluid discharged from the tank is newly supplied to the cavity 221 from which the fluid has been discharged.

Although the droplet discharge head has a structure in which the piezoelectric element is caused to change its volume to discharge the fluid, heat is applied to the fluid by the heating element so that the droplet is discharged by its expansion. It may have a different head configuration.

The electronic balance (not shown) includes a droplet discharge head 2
In order to measure and manage the weight of one droplet discharged from the 0 nozzle, for example, 5000 droplets are received from the nozzle of the droplet discharge head 20. The electronic balance can accurately measure the weight of one drop by dividing the weight of the 5000 drops by the number 5000. Based on the measured amount of this droplet, the droplet discharge head 20
It is possible to optimally control the amount of droplets discharged from the.

The cleaning unit 24 can clean the nozzles of the droplet discharge head 20 or the like periodically or at any time during the device manufacturing process or during standby. The capping unit 22 is used for the droplet discharge head 20.
In order to prevent the ink ejection surface 20P of
This ink ejection surface 20P during standby without manufacturing a device
It is a thing to put a cap on.

By moving the droplet discharge head 20 in the X direction by the second moving device 16, the droplet discharge head 20 can be selectively positioned above the electronic balance, cleaning unit 24 or capping unit 22. . In other words, even during the device manufacturing work,
By moving the droplet discharge head 20 to the electronic balance side, for example, the weight of the droplet can be measured. In addition, the droplet discharge head 20
Can be moved onto the cleaning unit 24 to clean the droplet discharge head 20. When the droplet discharge head 20 is moved onto the capping unit 22, a cap is attached to the ink discharge surface 20P of the droplet discharge head 20 to prevent drying.

That is, the electronic balance, the cleaning unit 24, and the capping unit 22 are arranged on the rear end side of the base 12 and directly below the moving path of the droplet discharge head 20 and apart from the stage ST. Since the work of supplying the substrate P to the stage ST and the work of discharging the substrate P are performed on the front end side of the base 12, these electronic balance, cleaning unit 24 or capping unit 22 are used.
Will not hinder the work.

The substrate P has a pattern forming region on the upper surface of which a wiring pattern (electrical circuit) is formed. Then, in order to form a wiring pattern, ink (fluid) is ejected from the droplet ejection head 20 onto the pattern formation region of the substrate P.

Next, by using the device manufacturing apparatus IJ having the above-mentioned configuration, the droplet discharge head 20 is applied to the substrate P.
A method of forming a laminated wiring pattern on the substrate P by ejecting ink from the above to laminate a plurality of material layers on the substrate P will be described. In the following description, as an example, a procedure for manufacturing an organic EL (electroluminescence) display device and a TFT (thin film transistor) that drives the organic EL (electroluminescence) display device will be described.

The EL display device has a structure in which a thin film containing a fluorescent inorganic and organic compound is sandwiched between a cathode and an anode, and electrons and holes are injected into the thin film to recombine. Is an element that emits light by utilizing the emission of light (fluorescence / phosphorescence) when the excitons are generated by the generation of excitons.

Here, as described above, the device manufacturing system is provided with a plurality of droplet discharge devices IJ as shown in FIG. 1, and each of the droplet discharge devices includes an ink (fluid) containing a different material. Body) is to be ejected. The ink is a material made into fine particles and made into a paste using a solvent and a binder, and is set to have a viscosity (for example, 50 cps or less) that can be discharged by the droplet discharge head 20. Then, of the plurality of droplet discharge devices of the plurality of groups, the first droplet discharge device discharges the ink containing the first material and then bake or dry the ink.
Next, the ink containing the second material is ejected from the second droplet ejecting device to the first material layer, and then the ink is baked or dried, and the same process is performed using a plurality of droplet ejecting devices. By doing so, a plurality of material layers are laminated on the substrate P to form a multilayer wiring pattern.

FIGS. 4, 5 and 6 are views showing an example of an active matrix type display device using an organic electroluminescence element. FIG. 4 is a circuit diagram of the organic EL display device and FIG. FIG. 3 is an enlarged plan view of a pixel portion with electrodes and organic electroluminescence elements removed.

As shown in the circuit diagram of FIG. 4, this organic EL
The display device S1 includes a plurality of scanning lines 131, a plurality of signal lines 132 extending in a direction intersecting the scanning lines 131, and a plurality of common power supply lines 133 extending in parallel with the signal lines 132 on the substrate. Are wired respectively,
For each intersection of the scanning line 131 and the signal line 132, the pixel AR
Is provided and configured.

A data line drive circuit 90 including a shift register, a level shifter, a video line, and an analog switch is provided for the signal line 132. on the other hand,
For the scanning line 131, a scanning line driving circuit 80 including a shift register and a level shifter is provided. Further, in each of the pixel regions AR, a first thin film transistor 322 whose scan signal is supplied to a gate electrode through a scan line 131 and an image signal which is supplied from a signal line 132 through this first thin film transistor 322. And a second thin film transistor 324 to which an image signal held by the storage capacitor cap is supplied to the gate electrode, and a common power supply line 133 is electrically connected through the second thin film transistor 324. A pixel electrode 323 into which a drive current sometimes flows from the common power supply line 133 and a light emitting portion (light emitting layer) 360 sandwiched between the pixel electrode (anode) 323 and the counter electrode (cathode) 522 are provided.

With this structure, when the scanning line 131 is driven and the first thin film transistor 322 is turned on, the potential of the signal line 132 at that time is held in the holding capacitor cap and the holding capacitor cap is held. The conductive state of the second thin film transistor 324 is determined depending on the state. Then, a current flows from the common power supply line 133 to the pixel electrode 323 through the channel of the second thin film transistor 324, and further, a current flows to the counter electrode 522 through the light emitting layer 360, so that the light emitting layer 360 has a current amount flowing therethrough. It emits light according to.

Here, in the planar structure of each pixel AR, as shown in FIG. 5, the four sides of the pixel electrode 323 having a rectangular planar shape have a signal line 132, a common power supply line 133, a scanning line 131 and other not shown. The arrangement is surrounded by scanning lines for pixel electrodes.

FIG. 6 is a sectional view taken along the line AA of FIG. Here, the organic EL display device shown in FIG. 6 is a so-called top emission type in which light is extracted from the side opposite to the substrate P side on which a thin film transistor (TFT: Thin Film Transistor) is arranged.

Examples of the material for forming the substrate P include glass, quartz, sapphire, and synthetic resins such as polyester, polyacrylate, polycarbonate, and polyetherketone. Here, when the organic EL display device is a top emission type, the substrate P may be opaque, and in that case, a ceramic sheet such as alumina or a metal sheet such as stainless steel that has been subjected to an insulation treatment such as surface oxidation, A thermosetting resin, a thermoplastic resin or the like can be used.

On the other hand, in the so-called back emission type in which light is taken out from the substrate side on which the TFTs are arranged, a transparent substrate is used, and a transparent or semitransparent material capable of transmitting light, for example, a transparent material. Examples include glass, quartz, sapphire, and transparent synthetic resins such as polyester, polyacrylate, polycarbonate, and polyetherketone. In particular, inexpensive soda glass is preferably used as the material for forming the substrate.

As shown in FIG. 6, the top emission type organic EL display device S1 includes a substrate P and an anode (pixel electrode) 323 made of a transparent electrode material such as indium tin oxide (ITO). , A hole transport layer 370 capable of transporting holes from the anode 323, a light emitting layer (organic EL layer, electro-optical element) 360 containing an organic EL substance which is one of electro-optical substances, and an upper surface of the light-emitting layer 360. The electron transport layer 350 provided and aluminum (Al) or magnesium (M) provided on the upper surface of the electron transport layer 350.
g), gold (Au), silver (Ag), calcium (Ca), and the like (cathode (counter electrode)) 522, and the energization that is formed on the substrate P and controls whether or not to write a data signal to the pixel electrode 323. A thin film transistor as a control unit (hereinafter,
(Referred to as “TFT”) 324. TFT3
24 is a scanning line drive circuit 80 and a data line drive circuit 90.
The pixel electrode 323 operates based on the operation command signal from the pixel electrode 323.
Energization control is performed.

The TFT 324 is provided on the surface of the substrate P via a base protective layer 581 composed mainly of SiO ₂ . This TFT 324 includes a silicon layer 541 formed on the upper layer of the base protection layer 581, a gate insulating layer 582 provided on the upper layer of the base protection layer 581 so as to cover the silicon layer 541, and an upper surface of the gate insulating layer 582. Gate electrode 542 provided in a portion facing the silicon layer 541
And a gate insulating layer 582 so as to cover the gate electrode 542.
The first interlayer insulating layer 583 provided on the upper layer, the source electrode 543 connected to the silicon layer 541 through a contact hole opened over the gate insulating layer 582 and the first interlayer insulating layer 583, and the gate electrode 542. A drain electrode (first material layer) 544 which is provided at a position facing the source electrode 543 and is connected to the silicon layer 541 through a contact hole which is opened over the gate insulating layer 582 and the first interlayer insulating layer 583. Source electrode 54
3 and the drain electrode 544, a second interlayer insulating layer (second material layer) 584 provided on the first interlayer insulating layer 583 is provided.

Then, the pixel electrode 323 is disposed on the upper surface of the second interlayer insulating layer 584, and the pixel electrode 323 and the drain electrode (first material layer) 544 are separated from each other by the second interlayer insulating layer (second
Material layer) 584 provided in the contact hole 323
It is connected via a. In addition, the second interlayer insulating layer 58
Between the portion of the surface of No. 4 other than the portion where the organic EL element is provided and the cathode 522, a third resin made of synthetic resin or the like is provided.
An insulating layer (bank layer) 521 is provided.

Note that a region of the silicon layer 541 which overlaps with the gate electrode 542 with the gate insulating layer 582 provided therebetween serves as a channel region. Further, in the silicon layer 541, the source region is provided on the source side of the channel region, while the drain region is provided on the drain side of the channel region. Of these, the source region is connected to the source electrode 543 through a contact hole that is opened across the gate insulating layer 582 and the first interlayer insulating layer 583. On the other hand, the drain region is the gate insulating layer 5
The drain electrode 544 formed of the same layer as the source electrode 543 is connected through a contact hole that is opened between the first electrode 82 and the first interlayer insulating layer 583. Pixel electrode 3
23 is a silicon layer 54 via the drain electrode 544.
1 drain region.

Next, the manufacturing process of the organic EL display device shown in FIG. 6 will be described with reference to FIGS. 7 and 8. First, the silicon layer 541 is formed on the substrate P. When forming the silicon layer 541, first, as shown in FIG.
As shown in (a), a base protective layer 581 made of a silicon oxide film having a thickness of about 200 to 500 nm is formed on the surface of the substrate P by plasma CVD using TEOS (tetraethoxysilane) or oxygen gas as a raw material.

Next, as shown in FIG. 7B, the temperature of the substrate P is set to about 350 ° C., and the thickness of about 3 is formed on the surface of the base protection film 581 by the plasma CVD method or the ICVD method.
A semiconductor layer 541A made of an amorphous silicon film having a thickness of 0 to 70 nm is formed. Then, this semiconductor layer 541A
A crystallization process is performed on the semiconductor layer 541A by a laser annealing method, a rapid heating method, a solid phase growth method, or the like.
Is crystallized into a polysilicon layer. In the laser annealing method, for example, an excimer laser beam having a length of 400 mm is used.
Output power of 200m
J / cm ² . As for the line beam, the line beam is scanned so that the portion corresponding to 90% of the peak value of the laser intensity in the short direction overlaps each region.

Next, as shown in FIG. 7C, the semiconductor layer (polysilicon layer) 541A is patterned into an island-shaped silicon layer 541, and TE is then applied to the surface thereof.
A gate insulating layer 582 made of a silicon oxide film or a nitride film having a thickness of about 60 to 150 nm is formed by a plasma CVD method using OS or an oxidizing gas as a raw material. Note that the silicon layer 541 is the second thin film transistor 3 shown in FIG.
Although it will be the channel region and the source / drain region of 24, the semiconductor film which becomes the channel region and the source / drain region of the first thin film transistor 322 is also formed at different cross-sectional positions. That is, the two types of transistors 322 and 324 are formed at the same time, but since they are formed by the same procedure, in the following description, regarding the transistor, only the second thin film transistor 324 will be described, and the first thin film transistor 322 will be described. The description is omitted.

The gate insulating layer 582 may be a porous silicon oxide film (SiO ₂ film). The gate insulating layer 582 made of a porous SiO ₂ film is formed by a CVD method (chemical vapor deposition method) using Si ₂ H ₆ and O ₃ as reaction gases. Using these reaction gases, high SiO ₂ particles in the gas phase is formed, a large SiO ₂ of the particles are deposited on the silicon layer 541 and protective underlayer 581. Therefore, the gate insulating layer 582 has many voids in the layer and is a porous body. The gate insulating layer 582 has a low dielectric constant by being a porous body.

The surface of the gate insulating layer 582 may be subjected to H (hydrogen) plasma treatment. As a result, dangling bonds in Si—O bond on the surface of the void are replaced with Si—H bond, and the moisture absorption resistance of the film is improved. And
Another SiO ₂ layer may be provided on the surface of the plasma-treated gate insulating layer 582. By doing so, an insulating layer having a low dielectric constant can be formed. In addition, the gate insulating layer 58
2 is formed by CVD, the reaction gas is Si ₂ H ₆ + O.
_In addition to ₃ , Si ₂ H ₆ + O ₂ , Si ₃ H ₈ + O ₃ , Si ₃ H ₈ +
It may be O ₂ . Further, in addition to the above reaction gas, B
A reaction gas containing (boron) or a reaction gas containing F (fluorine) may be used.

Further, the gate insulating layer 582 may be formed by a droplet discharge method. Examples of the ink ejected from the droplet ejection head 20 for forming the gate insulating layer 582 include the above-described material such as SiO ₂ dispersed in a suitable solvent to form a paste, an insulating material-containing sol, and the like. To be As the insulating material-containing sol, a composition containing a silane compound such as tetraethoxysilane dissolved in a suitable solvent such as ethanol, a chelate salt of aluminum, an organic alkali metal salt or an organic alkaline earth metal salt, and the like. Then, it may be one prepared by firing so that only the inorganic oxide is formed. After that, the gate insulating layer 582 formed by a droplet discharge method is fired.

When the gate insulating layer 582 is formed by the droplet discharging method, the base protective layer 581 and the silicon layer 5 are formed before the discharging operation for forming the gate insulating layer 582.
41 may be surface-treated to control the affinity of the ink. The surface treatment in this case is a hydrophilic ink treatment such as UV or plasma treatment. By doing so, the ink for forming the gate insulating layer 582 is brought into close contact with the base protective layer 581 and the like and is planarized.

Next, as shown in FIG. 7D, a conductive film containing a metal such as aluminum, tantalum, molybdenum, titanium, or tungsten is formed on the gate insulating layer 582 by a sputtering method and then patterned. The gate electrode 542 is formed. Next, in this state, high-concentration phosphorus ions are implanted to form the source region 541s and the drain region 541d in the silicon layer 541 in a self-aligned manner with respect to the gate electrode 542. In this case, the gate electrode 542 is used as a patterning mask.
The channel region 5 is a portion where impurities are not introduced.
41c.

Next, as shown in FIG. 7E, a first interlayer insulating layer 583 is formed. The first interlayer insulating layer 583 is
Like the gate insulating layer 582, the gate insulating layer 582 is formed of a silicon oxide film or a nitride film, a porous silicon oxide film, or the like, and is formed over the gate insulating layer 582 by a procedure similar to that of the gate insulating layer 582. Further, the step of forming the first interlayer insulating layer 583 may be performed by a droplet discharge method similarly to the step of forming the gate insulating layer 582. The ink ejected from the droplet ejection head 20 for forming the first interlayer insulating layer 583 is the same as the gate insulating layer 582.
Examples include pastes obtained by dispersing a material such as SiO ₂ in a suitable solvent, and sol containing an insulating material. As the insulating material-containing sol, a composition containing a silane compound such as tetraethoxysilane dissolved in a suitable solvent such as ethanol, a chelate salt of aluminum, an organic alkali metal salt or an organic alkaline earth metal salt, and the like. Then, it may be one prepared by firing so that only the inorganic oxide is formed. First interlayer insulating layer 5 formed by a droplet discharge method
83 is then fired.

The first interlayer insulating layer 583 is formed by the droplet discharge method.
At the time of forming, the surface treatment for controlling the affinity of the ink with respect to the upper surface of the gate insulating layer 582 may be performed before the discharging operation for forming the first interlayer insulating layer 583. The surface treatment in this case is a hydrophilic ink treatment such as UV or plasma treatment. By doing so, the ink for forming the first interlayer insulating layer 583 is formed in the gate insulating layer 58.
It comes into close contact with 2 and is flattened.

Then, by patterning the first interlayer insulating layer 583 and the gate insulating layer 582 by using a photolithography method, contact holes corresponding to the source electrode and the drain electrode are formed. Then the first
After forming a conductive layer made of a metal such as aluminum, chromium, or tantalum so as to cover the interlayer insulating layer 583, a patterning mask is formed so as to cover a region of the conductive layer where the source electrode and the drain electrode are to be formed. And the conductive layer is patterned to form the source electrode 543 and the drain electrode 544.

Next, although not shown, the first interlayer insulating layer 5
A signal line, a common power supply line, and a scanning line are formed on 83. At this time, since the portion surrounded by these becomes a pixel for forming a light emitting layer and the like as described later, in the case of a back emission type, for example, the TFT 324 is not located immediately below the portion surrounded by the respective wirings. So that each wiring is formed.

Then, as shown in FIG. 8A, the second interlayer insulating layer 584, the first interlayer insulating layer 583, and the electrodes 54 are formed.
3, 544 and the wirings (not shown) are formed so as to cover them. The first interlayer insulating layer 583 is formed by a droplet discharge method. Here, the control unit CON of the device manufacturing apparatus IJ
As shown in FIG. 8A, T sets a non-ejection region (non-dripping region) H on the upper surface of the drain electrode (first material layer) 544, and the non-ejection region H of the drain electrode 544 other than the non-ejection region H is set. Ink for forming the second interlayer insulating layer 584 is discharged to cover the portion, the source electrode 543, and the first interlayer insulating layer 583, and the second interlayer insulating layer 584 is formed. By doing so, the contact hole 323a is formed.

Here, as the ink to be ejected from the droplet ejection head 20 for forming the second interlayer insulating layer 584, a material such as SiO ₂ is dispersed in an appropriate solvent as in the case of the first interlayer insulating layer 583. Examples thereof include pasted ones and insulating material-containing sols. As the insulating material-containing sol, a composition containing a silane compound such as tetraethoxysilane dissolved in a suitable solvent such as ethanol, a chelate salt of aluminum, an organic alkali metal salt or an organic alkaline earth metal salt, and the like. Then, it may be one prepared by firing so that only the inorganic oxide is formed. The second interlayer insulating layer 584 formed by the droplet discharge method is then fired.

The second interlayer insulating layer 584 is formed by the droplet discharge method.
At the time of forming, the surface treatment for controlling the affinity of the ink to the non-ejection region H of the drain electrode 544 is performed before the ejection operation for forming the second interlayer insulating layer 584. Good. The surface treatment in this case is an ink repellent treatment. By doing so, ink is not arranged in the non-ejection region H, and the contact hole 323a can be stably formed. In addition, the drain electrode 54 other than the non-ejection region H
4 upper surface, source electrode 543 upper surface, first interlayer insulating layer 583
By subjecting the upper surface to the ink-philic process in advance,
The ink for forming the second interlayer insulating layer 584 includes the first interlayer insulating layer 583, the source electrode 543, and the drain electrode 54.
While closely adhering to a portion other than the non-ejection region H of 4,
Flattened.

Thus, the contact hole 3 is formed in the portion of the second interlayer insulating layer 584 corresponding to the drain electrode 544.
When the second interlayer insulating layer (second material layer, insulating material layer) 584 is formed on the drain electrode (first material layer, conductive material layer) 544 while forming 23a, as shown in FIG. )
As shown in FIG. 3, the conductive material is patterned so that the contact hole 323a is filled with a conductive material such as ITO, that is, so as to be continuous with the drain electrode 544 through the contact hole 323a, and the pixel electrode (anode) 3 is formed.
23 is formed.

The anode 323 connected to the organic EL element is I
The drain electrode 544 of the TFT 324 is made of a transparent electrode material such as SnO ₂ doped with TO or fluorine, ZnO, polyamine, etc. through the contact hole 323a.
It is connected to the. To form the anode 323, a film made of the transparent electrode material is formed on the upper surface of the second interlayer insulating layer 584, and this film is patterned.

After forming the anode 523, as shown in FIG. 8C, the anode 3 and the predetermined position of the second interlayer insulating layer 584 are formed.
The organic bank layer 521 is formed so as to cover a part of 23. The third insulating layer 521 is made of synthetic resin such as acrylic resin or polyimide resin. Concrete third
As a method for forming the insulating layer 521, for example, a resist such as acrylic resin or polyimide resin melted in a solvent is applied by spin coating, dip coating, or the like to form the insulating layer. The constituent material of the insulating layer may be any material as long as it does not dissolve in the solvent of the ink described later and is easily patterned by etching or the like. Further, the insulating layer is simultaneously etched by a photolithography technique or the like to form the opening 521a, whereby the third insulating layer 521 including the opening 521a is formed.

Here, on the surface of the third insulating layer 521, a region exhibiting ink affinity and a region exhibiting ink repellency are formed. In this embodiment, each region is formed by a plasma treatment process. Specifically, the plasma treatment step includes a preheating step, an ink-philic step for making the wall surface of the opening 521a and the electrode surface of the pixel electrode 323 ink-philic, and an upper surface of the third insulating layer 521 is ink-repellent. It has an ink repellent process and a cooling process. That is, the base material (the substrate P including the third insulating layer and the like) is heated to a predetermined temperature (for example, about 70 to 80 ° C.), and then a plasma treatment (O) in which oxygen is used as a reaction gas in the atmosphere as an ink-philic step. ₂ Plasma treatment). Then, as an ink-repellent process, plasma treatment (CF ₄ plasma treatment) using tetrafluoromethane as a reaction gas is performed in the atmosphere,
By cooling the substrate heated for the plasma treatment to room temperature, the ink affinity and the ink repellency are imparted to the predetermined places. Note that the electrode surface of the pixel electrode 323 is somewhat affected by this CF ₄ plasma treatment, but since ITO or the like, which is the material of the pixel electrode 323, has a poor affinity for fluorine, the hydroxyl group added in the ink-affinity imparting step. Is not replaced by a fluorine group, and the ink affinity is maintained.

Then, as shown in FIG.
A hole transport layer 370 is formed on the upper surface of 23. Here, as a material for forming the hole transport layer 370, known materials can be used without particular limitation, and examples thereof include a triphenylamine derivative (TPD), a pyrazoline derivative, an arylamine derivative, a stilbene derivative, and a triphenylamine derivative. A phenyldiamine derivative or the like. Specifically, JP-A-63-7
No. 0257, No. 63-175860, JP-A-2-
135359, 2-135361, 2-209
Examples thereof include those described in JP-A No. 988, JP-A No. 3-37992, and JP-A No. 3-152184, but triphenyldiamine derivatives are preferable, and among them, 4,4′-bis (N (3-methylphenyl)). -N-phenylamino) biphenyl is preferred.

The hole injection layer may be formed instead of the hole transport layer, or both the hole injection layer and the hole transport layer may be formed. In that case, as the material for forming the hole injection layer, for example, copper phthalocyanine (C
uPc), polytetrahydrothiophenylphenylene, polyphenylene vinylene, 1,1-bis- (4-
Examples thereof include N, N-ditolylaminophenyl) cyclohexane and tris (8-hydroxyquinolinol) aluminum, but it is particularly preferable to use copper phthalocyanine (CuPc).

When forming the hole injection / transport layer 370, a droplet discharge method is used. That is, after the composition ink containing the hole injection / transport layer material described above is discharged onto the electrode surface of the anode 323, the hole injection / transport layer 370 is formed on the anode 323 by performing drying treatment and heat treatment. To be done. In addition, after this hole injection / transport layer forming step,
Hole injection / transport layer 370 and light emitting layer (organic EL layer) 36
In order to prevent 0 oxidation, it is preferable to carry out in an inert gas atmosphere such as a nitrogen atmosphere or an argon atmosphere. For example, a droplet discharge head (not shown) is filled with a composition ink containing a hole injection / transport layer material, the discharge nozzle of the droplet discharge head is opposed to the electrode surface of the anode 323, and While relatively moving the material (substrate P), 1 from the discharge nozzle
Ink droplets with a controlled amount of liquid per droplet are ejected onto the electrode surface. Next, the discharged droplets are dried to evaporate the polar solvent contained in the composition ink, thereby injecting holes /
The transport layer 370 is formed.

As the composition ink, it is possible to use, for example, a mixture of a polythiophene derivative such as polyethylenedioxythiophene and polystyrene sulfonic acid dissolved in a polar solvent such as isopropyl alcohol. Here, the ejected liquid droplets spread on the electrode surface of the anode 323 that has been subjected to the ink-philic treatment, and the opening 52 is formed.
It is filled near the bottom of 1a. On the other hand, droplets are repelled and do not adhere to the upper surface of the third insulating layer 521 that has been subjected to the ink repellent treatment. Therefore, even if the droplet is ejected from the predetermined ejection position onto the upper surface of the third insulating layer 521,
The upper surface is not wetted by the droplets, and the repelled droplets are supposed to roll into the openings 521a of the third insulating layer 521.

Next, the light emitting layer 360 is formed on the upper surface of the hole injecting / transporting layer 370. The material for forming the light emitting layer 360 is not particularly limited, and low molecular weight organic light emitting dyes and polymer light emitting materials, that is, light emitting materials including various fluorescent materials and phosphorescent materials can be used. Among the conjugated polymers as the light emitting substance, those containing an arylene vinylene structure are particularly preferable. Examples of the low molecular weight fluorescent substance include dyes such as naphthalene derivative, anthracene derivative, perylene derivative, polymethine type, xathene type, coumarin type and cyanine type, metal complexes of 8-hydroquinoline and its derivatives,
Aromatic amines, tetraphenylcyclopentadiene derivatives and the like, or JP-A-57-51781 and 59-194.
Known materials described in Japanese Patent No. 393 can be used.

The light emitting layer 360 is a hole injecting / transporting layer 370.
It is formed by the same procedure as the forming method. That is, the composition ink containing the light emitting layer material is ejected onto the upper surface of the hole injecting / transporting layer 370 by a droplet ejecting method, and then a drying process and a heat treatment are performed to form an opening formed in the third insulating layer 521. The light emitting layer 360 is formed on the hole injecting / transporting layer 370 inside the 521a. This light emitting layer forming step is also performed in the inert gas atmosphere as described above. Since the ejected composition ink is repelled in the ink-repellent treated area, the repelled droplets roll into the openings 521a of the third insulating layer 521 even if the droplets deviate from a predetermined ejection position.

Next, the electron transport layer 350 is formed on the upper surface of the light emitting layer 360. The electron transport layer 350 is also formed by a droplet discharge method, similarly to the method of forming the light emitting layer 360. The material for forming the electron transport layer 350 is not particularly limited, and includes oxadiazole derivatives, anthraquinodimethane and its derivatives, benzoquinone and its derivatives, naphthoquinone and its derivatives, anthraquinone and its derivatives, and tetracyanoanthraquinodines. Examples thereof include methane and its derivatives, fluorenone derivatives, diphenyldicyanoethylene and its derivatives, diphenoquinone derivatives, 8-hydroxyquinoline and its derivative metal complexes, and the like. Specifically, similar to the above-mentioned material for forming the hole transport layer, JP-A-63-70257 and 63-175860.
JP-A-2-135359 and JP-A-2-135536.
No. 1, No. 2-209988, No. 3-37992, No. 3-152184, etc. are illustrated, and especially 2- (4-biphenylyl) -5- (4-t-
Butylphenyl) -1,3,4-oxadiazole, benzoquinone, anthraquinone, tris (8-quinolinol) aluminum are preferred.

The material for forming the hole injecting / transporting layer 370 and the material for forming the electron transporting layer 350 described above are used as the light emitting layer 360.
It may be mixed with the above-mentioned forming material and used as a light emitting layer forming material. In that case, the amount of the hole injecting / transporting layer forming material or the electron transporting layer forming material used may depend on the kind of the compound used and the like. Although different, it is appropriately determined in consideration of them within a range that does not impair sufficient film-forming properties and light emission characteristics. Usually, it is 1 to 40% by weight, more preferably 2 to 30% by weight, based on the light emitting layer forming material.

Next, as shown in FIG. 8E, a cathode 522 is formed on the upper surfaces of the electron transport layer 350 and the third insulating layer 521. The cathode 522 is formed over the entire surface of the electron transport layer 350 and the third insulating layer 521, or in the shape of a stripe. Regarding the cathode 522, of course, Al, M
Simple materials such as g, Li, Ca, and Mg: Ag (10: 1
Although it may be formed of one layer made of an alloy material of
It may be formed as a metal layer (including an alloy) consisting of three layers or three layers. Specifically, Li ₂ O (about 0.5 nm) / Al, LiF (about 0.5 nm) / Al, MgF
_A laminated structure such as ₂ / Al can also be used. The cathode 222 is a thin film made of the above-mentioned metal and can transmit light.

As described above, the drain electrode 544
When the second interlayer insulating layer 584 is laminated on the upper layer, the position where the contact hole 323a is to be formed is the non-ejection region H, and ink is not ejected to this portion,
The contact hole 323a can be easily formed without increasing the number of manufacturing steps. Further, by adopting the droplet discharge method as a method of laminating each layer, it is possible to attach the ink with an arbitrary thickness to an arbitrary position on the upper surface of the drain electrode 544 with inexpensive equipment. Further, since the ink is not ejected to the unnecessary portion, it is possible to suppress the wasteful ink consumption and reduce the manufacturing cost.

Then, after forming the second interlayer insulating layer 584 which is an insulating material layer, by filling the contact hole 323a corresponding to the non-ejection region H with the conductive material, different conductive material layers, that is, Drain electrode 54
4 and the anode 323 can be electrically connected, and a multilayer wiring device having desired performance can be manufactured.

Further, by previously performing a surface treatment for controlling the affinity of the ink with respect to the surface on which the ink is ejected,
For example, the contact hole 323 corresponding to the non-ejection region H
The conductive material can be brought into close contact with a, or the second material layer can be formed smoothly by surface-treating the entire surface of the first material layer. It can be applied in a desired state.

In the above embodiment, the droplet discharge method is used when forming each insulating layer, but the source electrode 543 is used.
Or drain electrode 544, or anode 323 or cathode 52
A droplet discharge method may be used when forming 2.

In the above embodiment, the non-ejection region H is formed in the drain electrode 544 which is the lower layer of the second interlayer insulating layer 584.
And the contact hole 3 is formed in the second interlayer insulating layer 584.
23a is formed, the contact holes of the gate insulating layer 582 and the first interlayer insulating layer 583 may be formed based on the device manufacturing method of the present invention. In this case, the non-ejection area is set on the upper surface of the silicon layer 541. Then, a contact hole is formed in the gate insulating layer 582 and the first interlayer insulating layer 583 by a droplet discharge method, and then the contact hole is filled with a conductive material for forming the source electrode 543 and the drain electrode 544. Good.

In the above-described embodiment, the device manufacturing method of the present invention is applied to the formation of the wiring pattern of the driving TFT of the organic EL display device, but the present invention is not limited to the organic EL display device, but a PDP (plasma display panel). )
It can be applied to the manufacture of various multilayer wiring devices such as the manufacture of device wiring patterns and the manufacture of liquid crystal display device wiring patterns. Then, when manufacturing various multilayer wiring devices, the droplet discharge method can be applied when forming either material layer of the conductive material layer and the insulating material layer.

The conductive material forming the conductive material layer may be a predetermined metal or a conductive polymer. As the metal, silver, gold, nickel, indium, tin, lead, zinc, titanium, copper, chromium, tantalum, tungsten, palladium, platinum, iron, cobalt, boron, silicon, aluminum, magnesium, scandium, depending on the use of the metal paste. , At least one metal selected from rhodium, iridium, vanadium, ruthenium, osmium, niobium, bismuth, barium and the like, or alloys thereof. Further, silver oxide (AgO or Ag ₂ O), copper oxide, etc. may also be mentioned.

Further, as an organic solvent for forming the above conductive material into a paste capable of being ejected from a droplet ejection head, one of alcohols having 5 or more carbon atoms (for example, terpineol, citronellol, geraniol, nerol, phenethyl alcohol) is used. A solvent containing one or more kinds, or a solvent containing one or more kinds of organic esters (eg, ethyl acetate, methyl oleate, butyl acetate, glyceride) may be used, and can be appropriately selected depending on the use of the metal or metal paste to be used. . Furthermore, mineral spirits, tridecane, dodecylbenzene or a mixture thereof, or a mixture thereof with α-terpineol, a hydrocarbon having 5 or more carbon atoms (for example, pinene, etc.), alcohol (for example, n-heptanol, etc.), Ethers (eg ethylbenzyl ether etc.), esters (eg n-butyl stearate etc.), ketones (eg diisobutyl ketone etc.), organic nitrogen compounds (eg triisopropanolamine etc.), organosilicon compounds (silicone oil etc.) ),
It is also possible to use an organic sulfur compound or a mixture thereof. In addition, you may add a suitable organic substance in an organic solvent as needed.

In the above embodiment, one droplet discharge head 20 is provided for each droplet discharge device IJ, and a plurality of droplet discharge devices IJ are used to form a multilayer wiring. Although the pattern is formed, it is of course possible to adopt a configuration in which a plurality of droplet discharge heads are attached to one droplet discharge device. In this case, a tank (ink containing device) containing ink containing different materials is independently connected to each of the plurality of droplet discharge heads via a pipe (flow path).

The technical scope of the present invention is not limited to the above-mentioned embodiment, and various modifications can be made without departing from the spirit of the present invention. The material and layer structure are merely examples, and can be appropriately changed.

[Brief description of drawings]

FIG. 1 is a schematic perspective view showing an example of a device manufacturing apparatus of the present invention.

FIG. 2 is an exploded perspective view of a droplet discharge head.

FIG. 3 is a partial cross-sectional view of a perspective view of a main part of the droplet discharge head.

FIG. 4 is a circuit diagram showing an active matrix type organic EL display device.

5 is an enlarged view showing a planar structure of a pixel portion in the display device of FIG.

FIG. 6 is a diagram showing an example of a layer structure of an organic EL display device manufactured by a method for manufacturing an electro-optical device of the present invention.

FIG. 7 is an explanatory diagram showing an example of a method for manufacturing an electro-optical device of the present invention.

FIG. 8 is an explanatory diagram showing an example of a method for manufacturing an electro-optical device of the present invention.

[Explanation of symbols]

20 Droplet Ejection Head 323a Contact Hole 544 Drain Electrode (First Material Layer, Conductive Material Layer) 584 Second Interlayer Insulating Layer (Second Material Layer, Insulating Material Layer) CONT Control Device H Non-Ejection Area (Non Dropping area) IJ device manufacturing device (droplet discharging device) P substrate

   ─────────────────────────────────────────────────── ─── Continued front page    F-term (reference) 3K007 AB18 DB03 FA01                 5F033 GG04 HH08 HH17 HH21 HH38                       JJ08 JJ17 JJ21 JJ38 KK04                       KK08 KK17 KK21 QQ00 RR04                       RR09 RR25 SS22 VV15 XX33                       XX34                 5F058 BA20 BC02 BC03 BF46 BH01                       BJ02                 5F110 AA16 BB01 CC01 DD01 DD02                       DD03 DD04 DD13 EE03 EE04                       EE44 FF02 FF03 FF21 FF30                       FF35 GG02 GG13 GG25 GG45                       HJ01 HJ13 HL03 HL04 NN03                       NN23 NN24 NN32 NN39 PP03                       PP06 QQ11 QQ19 QQ24

Claims (5)

[Claims] 1. A method of manufacturing a device, comprising: dropping a fluid from a dropping device capable of quantitatively dropping the fluid onto a substrate to stack a plurality of material layers on the substrate. A non-dripping region is set in advance on the upper surface of the first material layer formed on the first material layer, and the fluid is dripped on a portion of the first material layer other than the non-dripping region to form the first material layer upper layer. A method for manufacturing a device, comprising forming a second material layer on the substrate. 2. The device manufacturing method according to claim 1, wherein the dropping device is a droplet discharge head. 3. The first material layer is a conductive material layer, the second material layer is an insulating material layer, and the second material layer is an insulating material layer.
3. The method for manufacturing a device according to claim 1, wherein the non-dripping region is filled with a conductive material after forming the material layer. 4. Before the dropping operation for forming the second material layer, with respect to the first material layer including the non-dripping region, with respect to the first material layer and the non-dripping region The device manufacturing method according to claim 1, wherein a surface treatment for controlling the affinity of the fluid is performed. 5. A device manufacturing apparatus including a dropping device capable of quantitatively dropping a fluid onto a substrate, wherein a non-dripping region is set on an upper surface of a first material layer formed in advance on the substrate, A device manufacturing apparatus comprising: a control device that controls a dropping operation of the dropping device so that the fluid is dropped onto a portion of the first material layer other than the non-dripping region.