JP2003282413A - Scanning exposure apparatus and exposure method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To maintain the maximum scanning speed of a mask stage and a substrate stage even if a substrate to which a mask pattern is projected is coated with any kind of photosensitive material. <P>SOLUTION: A scanning apparatus is provided with an illuminating apparatus which controls light from a light source 1 so as to have constant luminance based on a value detected by a luminance sensor 30 for detecting the luminance of the light from the light source 1, a projection optical system for projecting a pattern formed on a mask M onto a substrate, a mask stage MS capable of mounting a mask and installed so that it can move with respect to the projection optical system, a substrate stage capable of mounting the substrate and installed so that it can move with respect to the projection optical system, a light-attenuating filter 14b for attenuating light from the illuminating apparatus to the substrate, and a control means 20 for controlling the light-attenuating filter so as to maintain the maximum scanning speed of the mask stage and the substrate stage based on the sensitivity of the photosensitive material coated on the substrate. <P>COPYRIGHT: (C)2004,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a scanning type exposure apparatus and an exposure method used in the manufacturing process of semiconductor elements, liquid crystal display elements, image pickup elements, thin film magnetic heads and other microdevices.

[0002]

2. Description of the Related Art In recent years, liquid crystal display panels have been widely used as display elements for word processors, personal computers, televisions and the like. In particular, in a notebook type word processor or a notebook type personal computer where portability is important, a liquid crystal display panel is indispensable as a display element. Further, in recent years, a liquid crystal display panel exceeding 20 inches has been put into practical use, but since the liquid crystal display panel does not require much installation space, it is often used as a television for general household use. A liquid crystal display panel is manufactured by patterning a transparent thin film electrode on a glass substrate (plate) into a desired shape by a photolithography method. As an apparatus for this photolithography process, there is a projection exposure apparatus that projects and exposes an original image pattern formed on a mask onto a glass substrate (plate) coated with a photosensitive material such as photoresist through a projection optical system. It is used.

Recently, as the glass substrate becomes larger, the projection exposure apparatus is required to have a larger area for efficiently exposing a pattern having a larger area onto the glass substrate. In order to realize such a large area, it is necessary to keep the distortion within a predetermined amount over the entire shot area. Therefore, in order to reduce the distortion on the entire surface of a wide exposure area, a so-called scanning type (step-and-scan type) exposure apparatus that performs exposure using only a portion in the vicinity of the optical axis of the projection optical system is drawing attention. In this exposure apparatus, after stepping each shot area on the glass substrate to the scanning start position,
The pattern on the mask is projected by scanning the glass substrate with respect to the exposure region conjugate with the illumination region in synchronization with the scanning of the mask with respect to the predetermined slit-shaped illumination region illuminated by the illumination light. It sequentially projects on each shot area on the glass substrate through the system.

[0004]

By the way, the sensitivity of the photosensitive material (resist) applied to the substrate on which the pattern of the mask is projected is different depending on the type of the resist. In order to maintain the scanning speed of the substrate stage at the highest speed and obtain the highest throughput, it is necessary to adjust the illumination light from the illumination device to the optimum illuminance according to the sensitivity of the resist.
That is, in the scanning projection exposure apparatus, if the illuminance of the illumination light becomes too high, the scanning speed cannot keep up and the exposure amount becomes excessive. On the other hand, if the illuminance of the illumination light becomes too low, the scanning speed must be slowed down. Without this, the throughput will be extremely reduced.

An object of the present invention is to keep the scanning speed of the mask stage and the substrate stage at the highest speed even when any kind of photosensitive material is applied to the substrate onto which the mask pattern is projected. Another object of the present invention is to provide a simple scanning type exposure apparatus. Another object of the present invention is to provide an exposure method using this scanning type exposure apparatus.

[0006]

A scanning exposure apparatus according to claim 1 comprises a light source and an illuminance detecting means for detecting an illuminance of light from the light source, and based on a detection value from the illuminance detecting means. And a projection optical system that projects a pattern formed on a mask onto a substrate, and the mask is mountable, and the illumination device controls the light from the light source to have a constant illuminance. A mask stage movably provided with respect to the projection optical system, a substrate stage with which the substrate can be placed and movably provided with respect to the projection optical system, the illumination device and the substrate Based on the sensitivity of a photosensitive material applied on the substrate, and a dimming unit that is disposed in an optical path between the illuminating device and the substrate for dimming the light toward the substrate. The scanning speed of the substrate stage And a controlling means for controlling the dimming device to maintain the speed.

According to the scanning type exposure apparatus of the first aspect, the illuminance detecting means provided in the illuminating device detects the illuminance of the light from the light source, and the light from the light source is constant based on the detected value. Control so that the illuminance becomes. Then, based on the sensitivity of the photosensitive material applied on the substrate, the light of a certain illuminance emitted by the illuminating device is reduced by the dimming means arranged in the optical path between the illuminating device and the substrate. Dimming. Therefore, regardless of the sensitivity of the substrate coated with the photosensitive material, the scanning speed of the mask stage and the substrate stage during exposure can be maintained at the maximum speed, and the maximum throughput can be obtained.

A scanning type exposure apparatus according to claim 2 is
The illumination device includes a plurality of light sources and a plurality of illuminance detection means for detecting the illuminance of each light source, so that the light from each light source has a constant illuminance based on the detection value by each illuminance detection means. It is characterized by controlling to.

According to the scanning type exposure apparatus of the second aspect, the illuminance of the light from each light source is detected by the plurality of illuminance detecting means provided in the illuminating device, and the illuminance of each light source is detected based on the detected value. The light is controlled to have a constant illuminance.
Therefore, the substrate can be illuminated with illumination light having a sufficient and constant illuminance.

Further, the scanning type exposure apparatus according to claim 3 is
The illuminating device includes a reflecting mirror that reflects the illuminating light from the light source to the mask side, and the illuminance detecting means detects the illuminance of the illuminating light from the light source based on leakage light from the reflecting mirror. Is characterized by.

According to the scanning type exposure apparatus of the third aspect, the illuminance of the illumination light emitted from the light source is detected by using the leaked light from the reflecting mirror, and the illuminance from the light source is detected based on the detected illuminance. The illuminance of illumination light is controlled to be constant. Therefore, the illuminance of the illumination light from the light source can be detected without causing a loss of the illumination light.

A scanning type exposure apparatus according to claim 4 is
An illuminance sensor for detecting illuminance on the substrate is further provided. Further, the scanning type exposure apparatus according to claim 5 is characterized in that the illuminance sensor for detecting illuminance on the substrate is mounted on the substrate stage.

According to the scanning type exposure apparatus of the fourth and fifth aspects, for example, the illuminance on the substrate is determined based on the illuminance on the substrate detected by the illuminance sensor mounted on the substrate stage. The scanning speed of the mask stage and the substrate stage during exposure can be maintained at the maximum speed by controlling the dimming unit so that the illuminance is optimal for the sensitivity of the photosensitive material applied to the substrate. .

A scanning type exposure apparatus according to claim 6 is
The illuminance sensor for detecting illuminance on the substrate is a sensor for detecting illuminance at a position optically conjugate with the substrate.

According to the scanning type exposure apparatus of the sixth aspect, the sensor for detecting the illuminance at the position conjugate with the substrate stage detects the illuminance on the substrate even at the time of exposure without lowering the throughput of the exposure apparatus. can do.

A scanning type exposure apparatus according to claim 7 is:
It is characterized in that the illuminance sensor detects illuminances of light in a plurality of wavelength ranges having different wavelength distributions.

According to the scanning type exposure apparatus of the present invention, since the illuminance sensor detects the illuminance of light in a plurality of wavelength bands having different wavelength distributions, the illuminance sensor detects the illuminance of light in a specific wavelength range on the substrate. The illuminance of can be detected. Therefore, even when the photosensitive material applied to the substrate has sensitivity only to light in a specific wavelength range having a wavelength distribution, by controlling the dimming means based on this detected value, the mask stage at the time of exposure Also, the scanning speed of the substrate stage can be maintained at the maximum speed.

The scanning exposure apparatus according to claim 8 is:
When the scanning speed of the mask stage and the substrate stage cannot maintain the maximum speed, the control means controls the dimming means so that the illuminance of the illumination light on the substrate becomes the maximum illuminance. And

According to the scanning type exposure apparatus of the present invention, when the scanning speed of the mask stage and the substrate stage cannot maintain the maximum speed, the illuminance of the illumination light on the substrate becomes the maximum illuminance. Since the dimming means is controlled, the maximum throughput when using the substrate can be obtained.

An exposure method according to a ninth aspect is the exposure method using the scanning type exposure apparatus according to any one of the first to eighth aspects, wherein the illumination device is used to illuminate the mask. An illumination step and a projection step of projecting the pattern image of the mask onto the substrate by using the projection optical system are included.

According to the ninth aspect of the exposure method, since the mask is illuminated with the illuminance based on the sensitivity of the photosensitive material applied to the substrate in the illumination step, the mask stage and the substrate stage at the time of exposure are exposed. The scanning speed can be maintained at the maximum speed and the maximum throughput can be obtained.

Further, the present invention is a light guide device for guiding light from a plurality of light sources to a predetermined exit end, which is a first light source which can be optically connected to a first light source of the plurality of light sources. An incident end, a second incident end optically connectable to a second light source different from the first light source among the plurality of light sources, and a part of the light incident from the first incident end. And the second
And a part of the light incident from the incident end is guided, and a detection emitting end provided at a position different from the predetermined emitting end is provided. In the above structure, it is preferable that the light guide device includes a plurality of emission ends.

In the above structure, it is preferable that the light guide device has a plurality of optical fiber bundles. In this case, the plurality of optical fiber bundles include a first optical fiber that optically connects the first entrance end and the detection exit end, the second entrance end and the detection exit end. And a second optical fiber for optically connecting and. And, the plurality of optical fiber bundles,
A third optical fiber that optically connects the first incident end and the predetermined exit end, and a fourth optical fiber that optically connects the second incident end and the predetermined exit end. It is more preferable to include and.

Further, the present invention is an illuminating device for illuminating a predetermined illuminating area based on light from a plurality of light sources, wherein the light guide device according to any one of the above and the detecting exit end. And a detector for detecting light.

Further, in the above-mentioned structure, it is preferable that the illuminating device is provided with a dimming means for dimming the light from the light guide device, and the dimming means is controlled based on an output from the detector. It is preferable to include a control unit that operates.

Further, the present invention is an exposure apparatus for transferring a pattern on a mask placed on a mask stage to a substrate placed on a substrate stage, for illuminating the pattern on the mask. And a projection optical system for forming an image of the pattern on the substrate, and the pattern while moving the mask stage and the substrate stage with respect to the projection optical system. Is to be transferred.

Further, the present invention is an exposure method for transferring a pattern on a mask onto a substrate, which comprises illuminating a part of an illumination area on the mask using the illumination device according to any one of the above. The image of the illuminated pattern is formed on the substrate while changing the relative positional relationship between the region and the mask.

[0028]

DESCRIPTION OF THE PREFERRED EMBODIMENTS An exposure apparatus according to embodiments of the present invention will be described below with reference to the drawings. Figure 1
FIG. 1 is a perspective view showing a schematic configuration of an entire exposure apparatus according to a first embodiment of the present invention. In the present embodiment,
An image of the pattern DP of the liquid crystal display element formed on the mask M while moving the mask M and the plate (substrate) P relative to the projection optical system including a plurality of catadioptric projection optical units. An example will be described in which is applied to a step-and-scan type exposure apparatus that transfers onto a plate P as a photosensitive substrate coated with a photosensitive material (resist). In this embodiment, a photoresist (sensitivity: 20 mJ / cm ² ) or a resin resist (sensitivity: 60 mJ / cm ² ) is applied on the plate P.

In the following description, the XYZ rectangular coordinate system shown in FIG. 1 is set, and the positional relationship of each member will be described with reference to this XYZ rectangular coordinate system. XYZ
The Cartesian coordinate system is set so that the X axis and the Y axis are parallel to the plate P, and the Z axis is set in a direction orthogonal to the plate P. In the XYZ coordinate system in the figure, the XY plane is actually set to a plane parallel to the horizontal plane, and the Z axis is set to the vertically upward direction. Further, in the present embodiment, the direction (scanning direction) in which the mask M and the plate P are moved is set to the X-axis direction.

The exposure apparatus according to the present embodiment uniformly illuminates the mask M supported in parallel with the XY plane via a mask holder (not shown) on a mask stage (not shown in FIG. 1) MS. An illumination optical system IL is provided. FIG. 2 is a side view of the illumination optical system IL, and the same members as those shown in FIG. 1 are designated by the same reference numerals. With reference to FIGS. 1 and 2, the illumination optical system IL includes a light source 1 which is, for example, an ultrahigh pressure mercury lamp. Since the light source 1 is arranged at the first focal point position of the elliptical mirror 2, the illumination light flux emitted from the light source 1 passes through the reflecting mirror (planar mirror) 3 and g
A light source image is formed at the second focal position of the ellipsoidal mirror 2 by a light in a wavelength range including the light of the line (436 nm), the light of the h line (405 nm), and the light of the i line (365 nm). That is, components other than the wavelength range including g-line, h-line, and i-line that are unnecessary for exposure are removed when reflected by the elliptic mirror 2 and the reflecting mirror 3.

A shutter 4 is arranged at this second focus position. The shutter 4 is composed of an aperture plate 4a (see FIG. 2) obliquely arranged with respect to the optical axis AX1 and a shield plate 4b (see FIG. 2) that shields or opens the aperture formed in the aperture plate 4a. . The shutter 4 is arranged at the second focal position of the elliptic mirror 2 because the illumination light flux emitted from the light source 1 is focused and the aperture plate 4a is moved with a small movement amount of the shielding plate 4b.
This is because it is possible to block the opening formed in the above, and it is possible to obtain a pulsed illumination light flux by rapidly changing the light amount of the illumination light flux that passes through the opening.

A light-absorbing plate 8a as a light-absorbing member is arranged in the traveling direction of the leaked light transmitted through the reflecting mirror 3. The light-absorbing plate 8a is provided to absorb the leaked light that has passed through the reflecting mirror 3 to prevent thermal or optical influence (eg, stray light) of the leaked light on the exposure apparatus. To be The light absorption plate 8a is formed of, for example, black alumite. A heat sink 9a as a heat dissipation member is attached to the light absorption plate 8a. The heat sink 9a has a plurality of heat radiating plates formed of a metal having a high thermal conductivity (for example, aluminum or copper), and radiates heat generated when the light absorbing plate 8a absorbs leaked light transmitted through the reflecting mirror 3. To release through. The leaked light is g-line light,
Light in the wavelength range including light of the h line and light of the i line, light in the infrared range, and light in the visible range are included.

FIG. 3 shows a light absorption plate 8a and a heat sink 9a.
3A and 3B are views ((a) side view, (b) plan view) showing the shape of FIG. As shown in this figure, one end of an optical fiber 32 for guiding the leaked light to the optical sensor 30 is arranged at a position where the leaked light of the light absorption plate 8a is incident. That is, the light-absorbing plate 8a is provided with a through hole through which the optical fiber 32 penetrates, and one end of the optical fiber 32 is arranged in this through hole.

Leaked light emitted from the other end of the optical fiber 32 enters the optical sensor 30. The detection signal of the illuminance of the leaked light detected by the optical sensor 30 is input to the power supply control device 34 that controls the amount of power supplied to the light source 1, and the power supply device 36 outputs the control signal based on the control signal from the power supply control device 34. The amount of electric power supplied to the light source 1 is controlled. That is, based on the detection signal from the optical sensor 30, the power supply control device 3 controls so that the illuminance of the illumination light emitted from the light source 1 becomes a constant value.
4 controls the power supply device 36.

The divergent light beam from the light source image formed at the second focal position of the elliptical mirror 2 is converted into a substantially parallel light beam by the relay lens 5 and enters the relay lens 10. An optical path (optical axis AX) is formed between the relay lens 5 and the relay lens 10.
A neutral density filter 7 is arranged so as to be able to move forward and backward with respect to 1). The neutral density filter 7 is arranged in the optical path when exposing the plate P coated with a high-sensitivity photoresist. The control of disposing the neutral density filter 7 in the optical path is performed by the main control system 20 in FIG. 2 controlling the drive device 18.

A light absorption plate 8b as a light absorption member is arranged in the traveling direction of the light reflected by the neutral density filter 7.
The light-absorbing plate 8b is provided to absorb the reflected light of the neutral density filter 7 to prevent a thermal effect or an optical effect (for example, stray light) of the reflected light on the exposure apparatus. . The light absorption plate 8b, like the light absorption plate 8a,
For example, it is formed by black alumite. Light absorption plate 8
A heat sink 9b as a heat radiation member is attached to b. The heat sink has a plurality of heat dissipation plates formed of a metal having a high thermal conductivity (for example, aluminum or copper), and heat generated when the light absorption plate 8b absorbs the reflected light of the neutral density filter 7 is passed through the heat dissipation plates. To release.

The light that has passed through the neutral density filter 7 is condensed again via the relay lens 10. An incident end 11a of the light guide 11 is arranged near the light collecting position. The light guide 11 is, for example, a random light guide fiber configured by bundling a large number of fiber strands at random, and has the same number of incident ends 1 as the number of light sources 1 (one in FIG. 1).
1a and the same number of exit ends 11b to 11f as the number of projection optical units (five in FIG. 1) configuring the projection optical system PL.
(Only the ejection end 11b is shown in FIG. 2).
In this way, the light incident on the incident end 11a of the light guide 11 propagates through the inside thereof, and then the five exit ends 11b to 1b.
It is divided from 1f and injected.

Between the exit end 11b of the light guide 11 and the mask M, a collimator lens 12b and a neutral density filter (darkening means) 14 composed of a density gradient filter.
b, fly-eye integrator 15b, aperture stop 16
b, half mirror 27b and condenser lens system 17
b are arranged in order. Similarly, the collimating lenses 12c to 12f and the neutral density filters 14c to 14 are provided between the respective exit ends 11c to 11f of the light guide 11 and the mask M.
f, fly-eye integrators 15c to 15f, aperture stops 16c to 16f, half mirrors 27b to 27f, and condenser lens systems 17c to 17f are sequentially arranged. Here, for simplification of description, the configuration of the optical member provided between the exit ends 11 c to 11 f of the light guide 11 and the mask M is provided between the exit end 11 b of the light guide 11 and the mask M. Collimator lens 12b, neutral density filter 14b, fly-eye integrator 15b, aperture stop 16b, half mirror 27b
The condenser lens system 17b will be described as a representative example.

The divergent light flux emitted from the exit end 11b of the light guide 11 is converted into a substantially parallel light flux by the collimator lens 12b, and then enters the neutral density filter 14b. Here, the neutral density filter 14b is a neutral density means arranged in the optical path in order to obtain the optimum illuminance of the illumination light according to the sensitivity of the resist applied to the plate P. The control of disposing the neutral density filter 14b in the optical path is performed by the main control system 20 based on the sensitivity of the resist applied to the plate P and the illuminance of the illumination light on the plate P, which will be described later.
9 and controls the position of the neutral density filter 14b in the X-axis direction.

The light flux that has passed through the neutral density filter 14b is incident on a fly-eye integrator (optical integrator) 15b. Fly eye integrator 1
5b is constituted by arranging a large number of positive lens elements vertically and horizontally and densely so that the central axis thereof extends along the optical axis AX2. Therefore, the fly eye
The light flux incident on the integrator 15b is wavefront-divided by a large number of lens elements, and forms a secondary light source having the same number of light source images as the number of lens elements on the rear focal plane (that is, near the exit surface). That is, the fly eye
A substantial surface light source is formed on the back focal plane of the integrator 15b.

Light fluxes from a large number of secondary light sources formed on the rear focal plane of the fly-eye integrator 15b are aperture diaphragms 16b (in FIG. 1, arranged in the vicinity of the rear focal plane of the fly-eye integrator 15b). After being limited by (not shown), the light enters the half mirror 27b. The light flux reflected by the half mirror 27b enters the illuminance sensor 29b via the lens 28b. This illuminance sensor 29b
Is a sensor for detecting the illuminance at a position optically conjugate with the plate P, and the illuminance sensor 29b can detect the illuminance on the plate P without lowering the throughput even during the exposure. The detection value of the illuminance sensor 29b is input to the main control system 20.

On the other hand, the luminous flux transmitted through the half mirror 27b enters the condenser lens system 17b. The aperture stop 16b is arranged at a position that is substantially conjugate with the pupil plane of the corresponding projection optical unit PL1, and has an aperture for defining the range of the secondary light source that contributes to illumination. The aperture of the aperture stop 16b may have a fixed aperture diameter or a variable aperture system. Here, it is assumed that the aperture of the aperture stop 16b is variable. The aperture stop 16b changes the aperture diameter of this variable aperture to determine the σ value (projection optical system PL
Ratio of the aperture diameter of the secondary light source image on the pupil plane of each of the projection optical units PL1 to PL5 constituting the
To the desired value.

The light flux that has passed through the condenser lens system 17b illuminates the mask M on which the pattern DP is formed in a superimposed manner. Similarly, the divergent light fluxes emitted from the other emission ends 11c to 11f of the light guide 11 are also collimated.
c-12f, neutral density filters 14c-14f, fly-eye integrators 15c-15f, aperture stops 16c-1.
6 f, the half mirrors 27 c to 27 f, and the condenser lens systems 17 c to 17 f are sequentially illuminated in a superimposed manner. That is, the illumination optical system IL includes the mask M
A plurality of elements arranged in the Y-axis direction above (total of 5 in FIG. 1)
Illuminate the trapezoidal area.

The light from each illumination area on the mask M includes a plurality of projection optical units PL1 to PL5 (a total of five in FIG. 1) arranged along the Y-axis direction so as to correspond to each illumination area.
The light enters the projection optical system PL composed of PL5. Here, the configurations of the projection optical units PL1 to PL5 are the same as each other.

Returning to FIG. 1, the above-mentioned mask stage MS
Is provided with a scanning drive system (not shown) having a long stroke for moving the mask stage MS along the X-axis direction which is the scanning direction. Further, a pair of alignment drive systems (not shown) for moving the mask stage MS by a minute amount along the Y-axis direction which is the direction orthogonal to the scanning and rotating it by a minute amount around the Z-axis are provided. Then, the position coordinates of the mask stage MS are configured to be measured and position-controlled by a laser interferometer (not shown) using the movable mirror 21.

A similar drive system is also provided for the plate stage PS. That is, the scanning drive system (not shown) having a long stroke for moving the plate stage PS along the X-axis direction which is the scanning direction, and the plate stage PS by a minute amount along the Y-axis direction which is the scanning orthogonal direction. A pair of alignment drive systems (not shown) for moving and rotating a small amount around the Z axis are provided. Then, the position coordinates of the plate stage PS are configured to be measured and position-controlled by a laser interferometer (not shown) using the movable mirror 22. Further, as a means for relatively aligning the mask M and the plate P along the XY plane, a pair of alignment systems 2
3a and 23b are arranged above the mask M. Further, an illuminance sensor 24 for detecting the illuminance of the illumination light on the plate P is provided on the plate stage PS. The detected value is input to the main control system 20 of the illumination optical system IL.

In this way, the mask M and the plate P are moved to the projection optical system PL including the plurality of projection optical units PL1 to PL5 by the action of the scan driving system on the mask stage MS side and the scan driving system on the plate stage PS side. By moving integrally in the same direction (X-axis direction), the entire pattern area on the mask M is transferred (scanning exposure) to the entire exposure area on the plate P.

[0048] Here, as described above, in this embodiment assumes a case where the sensitivity on the plate P photoresist or sensitivity of 20 mJ / cm ² is resin resist 60 mJ / cm ² is applied, The ratio of these sensitivities is 1: 3
Is. Accordingly, when the plate P is coated with a highly sensitive photoresist, the drive device 19 controls the neutral density filters 14b to 14f to reduce the illuminance of the illumination light, and when the resin resist having a low sensitivity is coated, The drive device 19 controls the neutral density filters 14b to 14f to increase the illuminance of the illumination light.

That is, the illuminance sensor 24 detects the illuminance of the illumination light on the plate P, and the detected value is the illumination optical system IL.
Is input to the main control system 20 of. The main control system 20 controls the neutral density filters 14b to 14f by the driving device 19 so that the illuminance of the illumination light on the plate P matches the illuminance of the resist applied to the plate P, that is, the sensitivity is 20 mJ / c.
The illuminance is controlled to be suitable for the m ² photoresist or the resin resist having a sensitivity of 60 mJ / cm ² .

By controlling the neutral density filters 14b to 14f by the driving device 19 in this manner, the illuminance of the illumination light on the plate P is set to the optimum sensitivity according to the sensitivity of the resist coated on the plate P. , The plate stage PS on which the plate P is placed and the mask stage MS on which the mask M is placed can be exposed while keeping the moving speed (scanning speed) at the maximum speed (maximum speed: 300 mm / sec). , You can get the highest throughput.

During exposure, the illuminance sensor 29b for detecting the illuminance at a position optically conjugate with the plate P.
The illuminance on the plate P can be obtained based on the illuminance detected in. Therefore, the illuminance on the plate can be detected without lowering the throughput even during the exposure, and the plate stage PS on which the plate P is mounted and the mask stage MS on which the mask M is mounted.
It is possible to perform exposure while maintaining the moving speed (scanning speed) of the maximum speed.

When the illuminance of the illumination light is insufficient, the moving speed (scanning speed) of the plate stage PS on which the plate P is placed and the mask stage MS on which the mask M is placed is maintained at the maximum speed. If not possible, the driving device 19 controls the neutral density filters 14b to 14f so that the illuminance of the illumination light on the plate P becomes the maximum illuminance. Therefore, it is possible to obtain the maximum throughput when performing exposure using the substrate.

[0053] Incidentally, in the above embodiments, the sensitivity on the plate P photoresist or sensitivity of 20 mJ / cm ² has been described the case where the resin resist 60 mJ / cm ² is applied, on the plate P For example, the sensitivity of the resist applied to the substrate is 20 mJ / cm ^{2 to} 200 m
Even when various types of resists are used such as J / cm ² , the plate P is placed by controlling the neutral density filters 14b to 14f according to the sensitivity of the resist applied to the plate P. It is possible to perform exposure while maintaining the moving speed (scanning speed) of the plate stage PS and the mask stage MS on which the mask M is mounted at the maximum speed.

Next, an exposure apparatus according to the second embodiment of the present invention will be described with reference to the drawings. In the description of the second embodiment, the same members as those of the exposure apparatus according to the first embodiment have the same reference numerals as those used in the description of the first embodiment. The explanation will be given.

FIG. 4 is a side view of the illumination optical system IL of the exposure apparatus according to the second embodiment of the present invention. The exposure apparatus according to the second embodiment has the same configuration as the exposure apparatus according to the first embodiment, except for the illumination optical system IL.

The exposure apparatus according to the second embodiment is
The illumination optical system IL has three light sources, and the illumination light from the three light sources is divided into five illumination lights via the light guide 11 having good randomness. Note that, also in this embodiment, the photoresist (sensitivity: 20 mJ / cm) is formed on the plate P.
² ) or resin resist (sensitivity: 60 mJ / cm ² ) shall be applied. The XYZ orthogonal coordinate system shown in FIG. 4 is the same as the XYZ orthogonal coordinate system used in the first embodiment.

As shown in FIG. 4, the illumination optical system IL includes
Three light source units 40a, 40b, 40c are provided, and the illumination light emitted from the light source unit 40a is incident on the incident end 11a ₁ of the light guide 11 at the light source unit 40a.
The illumination light emitted from b enters the incident end 11a ₂ , and the illumination light emitted from the light source unit 40c enters the incident end 11a ₃ .

FIG. 5 shows the structure of the light source unit 40a. Since the light source 1 is arranged at the first focus position of the elliptical mirror 2, the illumination light flux emitted from the light source 1 is transmitted through the reflecting mirror 3 to g-line light, h-line light, and i-line light. A light source image by light in a wavelength range including is formed at the second focal position of the elliptical mirror 2.

A shutter 4 is arranged at this second focus position. The shutter 4 is composed of an aperture plate 4a arranged obliquely with respect to the optical axis AX1 and a shield plate 4b which shields or opens the aperture formed in the aperture plate 4a.

A light-absorbing plate 8a as a light-absorbing member (light-absorbing means) is arranged in the traveling direction of the leaked light transmitted through the reflecting mirror 3. A heat sink 9a as a heat dissipation member is attached to the light absorption plate 8a. The light absorption plate 8a is provided with a through hole through which the optical fiber 32 penetrates, and one end of the optical fiber 32 is arranged in this through hole. Leaked light emitted from the other end of the optical fiber 32 enters the optical sensor 30.

The detection signal of the illuminance of the leaked light detected by the optical sensor 30 is input to the power supply control device 34 for controlling the amount of electric power supplied to the light source 1, and the power supply is supplied based on the control signal from the power supply control device 34. The amount of electric power supplied from the device 36 to the light source 1 is controlled. That is, based on the detection signal from the optical sensor 30, the power supply control device 34 controls the power supply device 36 so that the illuminance of the illumination light emitted from the light source 1 becomes a constant value.

The divergent light beam from the light source image formed at the second focal position of the elliptical mirror 2 is converted into a substantially parallel light beam by the relay lens 5 and enters the relay lens 10. An optical path (optical axis AX) is formed between the relay lens 5 and the relay lens 10.
A neutral density filter 7 is arranged as a neutral density member that is arranged so as to move forward and backward with respect to 1). The main control system 20 controls the driving device 18 to arrange the neutral density filter 7 in the optical path.
Is done by controlling.

Direction in which the light reflected by the neutral density filter 7 travels
A light-absorbing plate 8b as a light-absorbing member is arranged in the.
Light passing through the neutral density filter 7 passes through the relay lens 10
Collect again. The light guide 1 is located near this condensing position.
1 incident end 11a₁Are arranged. Therefore, the light source unit
The illumination light with a constant illuminance emitted from the knit 40a is lit.
Incident end 11a of the guide 11₁Incident on. Similarly, light
The illumination light of a constant illuminance emitted from the source unit 40b
Incident end 11a _TwoIs emitted from the light source unit 40c
Illumination light with a constant illuminance is incident on the incident end 11a._ThreeIncident on. Na
The configuration of the light source unit 40b and the light source unit 40c
Is the same as the configuration of the light source unit 40c, the description will be omitted.
Omit it.

The light guide 11 shown in FIG.
Randomly constructed by randomly bundling several fiber strands
Mullite guide fiber,
The same number of incident ends 11a₁, 11a_Two, 11a_ThreeEquipped with
Same as the number of projection optical units that make up the projection optical system PL
Number of ejection ends 11b to 11f (only the ejection end 11b in FIG.
Is shown) and. Incident of light guide 11
Shooting edge 11a₁, 11a _Two, 11a_ThreeThe light incident on
After propagating in the interior of the
It is divided and injected. In addition, each shooting of the light guide 11
The illuminance of the illumination light emitted from the outgoing ends 11b to 11f is
Incident end 11a₁, 11a_Two, 11a_ThreeIllumination light incident on
Is controlled so that the illuminance of
The illuminance is constant.

The light guide 11 preferably has a plurality of optical fiber bundles. That is, in this case, the exit end optical fiber bundle for guiding the part of the light incident to the incident end 11a ₁ and an exit end 11b from the incident end 11a ₁ optically connected to the exit end 11b, the incident end 11a ₂ An optical fiber bundle that optically connects 11b to guide a part of the light entering from the entrance end 11a ₂ to the exit end b, the entrance end 11a ₃ and the exit end 11b.
And an optical fiber bundle which is optically connected to guide a part of the light incident from the incident end 11a ₃ to the emission end b. Similarly, it has an optical fiber bundle which optically connects the entrance end 11a ₁ , the entrance end 11a ₂ , the entrance end 11a ₃ and the exit ends 11c to 11f, respectively.

Ejection ends 11b to 11f of the light guide 11
The divergent light flux emitted from the collimator lens 12b-
12f, neutral density filters 14b to 14f, fly-eye integrators 15b to 15f, aperture stops 16b to 16
f, the mask M is illuminated in a superimposed manner through the half mirrors 27b to 27f and the condenser lens systems 17b to 17f in this order. That is, a plurality of illumination optical systems IL are arranged in the Y-axis direction on the mask M (a total of five in FIG. 1).
Illuminates a trapezoidal area of.

The light from each illumination area on the mask M includes a plurality of projection optical units PL1 to PL1 (a total of five in FIG. 1) arranged along the Y-axis direction so as to correspond to each illumination area.
The light enters the projection optical system PL composed of PL5.

In this way, the mask M and the plate P are moved with respect to the projection optical system PL including the plurality of projection optical units PL1 to PL5 by the action of the scan driving system on the mask stage MS side and the scan driving system on the plate stage PS side. By moving integrally in the same direction (X-axis direction), the entire pattern area on the mask M is transferred (scanning exposure) to the entire exposure area on the plate P.

[0069] Here, as described above, in this embodiment it is assumed that the sensitivity on the plate P photoresist or sensitivity of 20 mJ / cm ² is resin resist 60 mJ / cm ² is applied. Accordingly, when the plate P is coated with a highly sensitive photoresist, the drive device 19 controls the neutral density filters 14b to 14f to reduce the illuminance of the illumination light, and when the resin resist having a low sensitivity is coated, The neutral density filter 1 by the drive device 19
4b to 14f are controlled to increase the illuminance of the illumination light.

That is, the illuminance sensor 24 detects the illuminance of the illumination light on the plate stage PS, and the detected value is input to the main control system 20 of the illumination optical system IL. Main control system 20
Controls the neutral density filters 14b to 14f by the driving device 19 so that the illuminance of the illumination light on the plate P is suitable for the resist applied to the plate P, that is, the sensitivity is 2.
0 mJ / cm ² photoresist or sensitivity 60 mJ /
The illuminance is controlled to be suitable for the resin resist of cm ² .

In the exposure apparatus according to the second embodiment, since the illumination optical system IL has three light source units, it is possible to supply the illumination light with sufficient illuminance to the plate P. Therefore, even when the plate P coated with various kinds of resists is used, the illuminance of the illumination light on the plate P is coated on the plate P by controlling the neutral density filters 14b to 14f by the driving device 19. The sensitivity can be optimized according to the sensitivity of the resist. Therefore, the plate stage PS on which the plate P is mounted and the mask stage MS on which the mask M is mounted can be exposed while maintaining the moving speed (scanning speed) at the maximum speed, and the maximum throughput can be obtained. it can.

In the exposure apparatus according to the second embodiment as well, during exposure, based on the illuminance detected by the illuminance sensor 29b for detecting the illuminance at a position optically conjugate with the plate P. , The illuminance on the plate P can be obtained. Therefore, even during exposure, the illuminance on the plate can be detected without lowering the throughput, and the moving speed (scanning speed) of the plate stage PS on which the plate P is placed and the mask stage MS on which the mask M is placed. ) Can be exposed at the maximum speed.

Also in the exposure apparatus according to the second embodiment, the plate stage PS on which the plate P is placed and the mask stage MS on which the mask M is placed, such as when the illuminance of illumination light is insufficient. Moving speed (scanning speed)
When it is not possible to maintain the maximum illuminance, the driving device 19 controls the neutral density filters 14b to 14f so that the illuminance of the illumination light on the plate P becomes the maximum illuminance. Therefore,
It is possible to obtain the maximum throughput when exposure is performed using the substrate.

[0074] Also in an exposure apparatus according to the second embodiment, or when the sensitivity of a resist is coated on the plate P is ^{20mJ / cm 2 ~200mJ / cm 2} , various types of resist When used, the plate P is controlled by controlling the neutral density filters 14b to 14f according to the sensitivity of the resist applied to the plate P.
It is possible to perform exposure while maintaining the moving speed (scanning speed) of the plate stage PS on which is mounted and the mask stage MS on which the mask M is mounted at the maximum speed.

Next, an exposure apparatus according to the third embodiment of the present invention will be described with reference to the drawings. In the description of the third embodiment, the same members as those of the exposure apparatus according to the first embodiment have the same reference numerals as those used in the description of the first embodiment. The explanation will be given. The XYZ rectangular coordinate system shown in FIG. 6 is the same as the XYZ rectangular coordinate system used in the first embodiment.

FIG. 6 is a side view of the illumination optical system IL of the exposure apparatus according to the third embodiment of the present invention. The exposure apparatus according to the third embodiment has the same configuration as the exposure apparatus according to the first embodiment except for the illumination optical system IL.

The exposure apparatus according to the third embodiment is
In the exposure apparatus according to the first embodiment, the reflecting mirror 3
The illuminance of the illuminating light from the light source 1 was detected by the leaked light of the above. Further, the illuminance of the illumination light at the position optically conjugate with the plate P is detected by using the illumination light branched by the half mirrors 27b to 27f, and the illumination emitted from the emission end 11b of the light guide 11 is detected. This is modified so that the illuminance of the illumination light at a position optically conjugate with the plate P is detected using light.

That is, the illumination light emitted from the other end of the optical fiber branched from the incident end 11a of the light guide 11 is incident on the sensor 30, and the sensor 30 detects the illuminance of the illumination light. The value detected by the sensor 30 is the power control device 3
4 and is controlled by the power supply device 36 so that the illuminance of the illumination light from the light source 1 becomes constant. In addition, the ejection end 11
The illumination light emitted from the other end of the optical fiber branched from b is incident on the sensor 33, and the illuminance of the illumination light is detected by the sensor 33. The value detected by the sensor 33 is the main control system 2
Input to 0.

Here, also in the third embodiment,
20mJ / cm sensitivity on rate P ²Photoresist
Or sensitivity is 60mJ / cm²Of resin resist is applied
It is assumed that Therefore, the plate P has high sensitivity.
Drive device 1 when a photo resist is applied
Illumination light by controlling the neutral density filters 14b to 14f by 9
The illuminance is low and the resin resist with low sensitivity is applied.
When it is present, the driving device 19 causes the neutral density filter 14b.
By controlling ~ 14f, the illuminance of the illumination light is increased.

That is, the illuminance sensor 24 detects the illuminance of the illumination light on the plate stage PS, and the detected value is input to the main control system 20 of the illumination optical system IL. Main control system 20
Controls the neutral density filters 14b to 14f by the driving device 19 so that the illuminance of the illumination light on the plate P is suitable for the resist applied to the plate P, that is, the sensitivity is 2.
0 mJ / cm ² photoresist or sensitivity 60 mJ /
The illuminance is controlled to be suitable for the resin resist of cm ² .

By controlling the neutral density filters 14b to 14f by the driving device 19 in this manner, the illuminance of the illumination light on the plate P is set to the optimum sensitivity corresponding to the sensitivity of the resist coated on the plate P. , The plate stage PS on which the plate P is placed and the mask stage MS on which the mask M is placed can be exposed while maintaining the moving speed (scanning speed) at the maximum speed, and the maximum throughput can be obtained. .

In the exposure apparatus according to the third embodiment, the plate is detected based on the illuminance detected by the illuminance sensor 33 that detects the illuminance at the position optically conjugate with the plate P during exposure. The illuminance on P can be obtained. Therefore, even during exposure, the illuminance on the plate can be detected without lowering the throughput, and the moving speed (scanning speed) of the plate stage PS on which the plate P is placed and the mask stage MS on which the mask M is placed. ) Can be exposed at the maximum speed.

Also in the exposure apparatus according to the third embodiment, the plate stage PS on which the plate P is placed and the mask on which the mask M is placed, such as when the illuminance of illumination light is insufficient. When the moving speed (scanning speed) of the stage MS cannot be maintained at the maximum speed, the driving device 1 is set so that the illuminance of the illumination light on the plate P becomes the maximum illuminance.
9 controls the neutral density filters 14b to 14f. Therefore, it is possible to obtain the maximum throughput when performing exposure using the substrate.

[0084] Also in an exposure apparatus according to the third embodiment, or when the sensitivity of a resist is coated on the plate P is ^{20mJ / cm 2 ~200mJ / cm 2} , various types of resist When used, the plate P is controlled by controlling the neutral density filters 14b to 14f according to the sensitivity of the resist applied to the plate P.
It is possible to perform exposure while maintaining the moving speed (scanning speed) of the plate stage PS on which is mounted and the mask stage MS on which the mask M is mounted at the maximum speed.

Next, an exposure apparatus according to the fourth embodiment of the present invention will be described with reference to the drawings. In the description of the fourth embodiment, the same members as those of the exposure apparatus according to the first to third embodiments will be referred to as first to first members.
The same reference numerals as those used in the description of the third embodiment are attached to the description. In addition, the XYZ rectangular coordinate system shown in FIG.
This is the same as the XYZ rectangular coordinate system used in the first embodiment.

FIG. 7 is a side view of the illumination optical system IL of the exposure apparatus according to the fourth embodiment of the present invention. The exposure apparatus according to the fourth embodiment has the same configuration as the exposure apparatus according to the first embodiment except for the illumination optical system IL.

The exposure apparatus according to the fourth embodiment is
Light source unit 40 of exposure apparatus according to second embodiment
In a, 40b, and 40c, the illuminance of the illumination light from the light source 1 is detected by the leaked light of the reflecting mirror 3, but the illumination light incident on the incident ends 11a ₁ , 11a ₂ , and 11a ₃ of the light guide 11 is detected. Used to detect the illuminance of the illumination light from the light source, and further to detect the illuminance of the illumination light at a position optically conjugate with the plate P using the illumination light branched by the half mirrors 27b to 27f. However, the illumination light emitted from the emission end 11b of the light guide 11 is used to detect the illuminance of the illumination light at a position optically conjugate with the plate P.

FIG. 8 is a diagram showing the structure of the light source unit 40a. As shown in this figure, in the light source unit 40a, the sensor 30 emits the illumination light emitted from the other end of the optical fiber branched from the incident end 11a of the light guide 11.
The sensor 30 detects the illuminance of the illumination light. The value detected by the sensor 30 is input to the power supply control device 34, and the power supply device 36 controls so that the illuminance of the illumination light from the light source 1 becomes constant. Light source unit 40b, 40
Also in c, the illuminance of the illumination light is detected by the same configuration, and the illuminance of the illumination light from the light source 1 is controlled to be constant.

Further, as shown in FIG. 7, the illumination light emitted from the other end of the optical fiber branched from the emission end 11b is incident on the sensor 33, and the sensor 33 detects the illuminance of the illumination light. The value detected by the sensor 33 is input to the main control system 20.

The light guide 11 according to the fourth embodiment preferably has a plurality of optical fiber bundles.
That is, in this case, an optical fiber bundle that optically connects the entrance end 11a ₁ and the exit end 11b, an optical fiber bundle that optically connects the entrance end 11a ₂ and the exit end 11b, and the entrance end 11a ₃ . It has an optical fiber bundle that optically connects to the exit end 11b. Similarly, the incident end 11a ₁ and the incident end 11
a ₂ , an optical fiber bundle that optically connects the entrance end 11a ₃ and the exit ends 11c to 11f.

Further, the light guide 11 may be provided with a detection emitting end. In this case, in addition to the optical fiber bundles that optically connect the above-mentioned entrance end and exit end,
An optical fiber bundle that optically connects the entrance end 11a ₁ and the detection exit end, an optical fiber bundle that optically connects the entrance end 11a ₂ and the detection exit end, and an entrance end 11a ₃ and the detection exit end. With an optical fiber bundle for optically connecting the.

Here, also in the exposure apparatus according to the fourth embodiment, the sensitivity on the plate P is 20 mJ / cm.
² of photoresist or sensitivity is assumed that the resin resist 60 mJ / cm ² is applied. Therefore, when the plate P is coated with a photoresist having high sensitivity, the driving device 19 drives the neutral density filters 14b to 14f.
When the resin resist having low sensitivity is applied, the drive device 19 controls the neutral density filters 14b to 14f to increase the illuminance of the illumination light.

That is, the illuminance sensor 24 detects the illuminance of the illumination light on the plate stage PS, and the detected value is input to the main control system 20 of the illumination optical system IL. Main control system 20
Controls the neutral density filters 14b to 14f by the driving device 19 so that the illuminance of the illumination light on the plate P is suitable for the resist applied to the plate P, that is, the sensitivity is 2.
0 mJ / cm ² photoresist or sensitivity 60 mJ /
The illuminance is controlled to be suitable for the resin resist of cm ² .

By controlling the neutral density filters 14b to 14f by the driving device 19 in this manner, the illuminance of the illumination light on the plate P is set to the optimum sensitivity according to the sensitivity of the resist coated on the plate P. , The plate stage PS on which the plate P is placed and the mask stage MS on which the mask M is placed can be exposed while maintaining the moving speed (scanning speed) at the maximum speed, and the maximum throughput can be obtained. .

In the exposure apparatus according to the fourth embodiment, the plate is detected based on the illuminance detected by the illuminance sensor 33 which detects the illuminance at the position optically conjugate with the plate P during exposure. The illuminance on P can be obtained. Therefore, even during exposure, the illuminance on the plate can be detected without lowering the throughput, and the moving speed (scanning speed) of the plate stage PS on which the plate P is placed and the mask stage MS on which the mask M is placed. ) Can be exposed at the maximum speed.

Also in the exposure apparatus according to the fourth embodiment, the plate stage PS on which the plate P is placed and the mask on which the mask M is placed, such as when the illuminance of illumination light is insufficient. When the moving speed (scanning speed) of the stage MS cannot be maintained at the maximum speed, the driving device 1 is set so that the illuminance of the illumination light on the plate P becomes the maximum illuminance.
9 controls the neutral density filters 14b to 14f. Therefore, it is possible to obtain the maximum throughput when performing exposure using the substrate.

[0097] Also in an exposure apparatus according to the fourth embodiment, or when the sensitivity of a resist is coated on the plate P is ^{20mJ / cm 2 ~200mJ / cm 2} , various types of resist When used, the plate P is controlled by controlling the neutral density filters 14b to 14f according to the sensitivity of the resist applied to the plate P.
It is possible to perform exposure while maintaining the moving speed (scanning speed) of the plate stage PS on which is mounted and the mask stage MS on which the mask M is mounted at the maximum speed.

Next, an exposure apparatus according to the fifth embodiment of the present invention will be described with reference to the drawings. In the description of the fifth embodiment, the same members as those of the exposure apparatus according to the first embodiment have the same reference numerals as those used in the description of the first embodiment. The explanation will be given. The XYZ rectangular coordinate system shown in FIG. 9 is the same as the XYZ rectangular coordinate system used in the first embodiment.

FIG. 9 is a side view of the illumination optical system IL of the exposure apparatus according to the fifth embodiment of the present invention. This fifth
The exposure apparatus of the embodiment has the same configuration as that of the exposure apparatus according to the first embodiment except for the illumination optical system IL. The illumination light flux emitted from the light source 1 passes through the reflecting mirror 3 and has a wavelength range including g-line, h-line, and i-line light.
A light source image by light of (wavelength distribution) is formed at the second focus position of the elliptical mirror 2. A shutter 4 is arranged at this second focus position. The shutter 4 is composed of an aperture plate 4a arranged obliquely with respect to the optical axis AX1 and a shield plate 4b which shields or opens the aperture formed in the aperture plate 4a.

A light-absorbing plate 8a as a light-absorbing member is arranged in the traveling direction of the leaked light transmitted through the reflecting mirror 3. One end of an optical fiber 32 for guiding the leaked light to the optical sensors 30a and 30b is arranged at a position of the light absorption plate 8a where the leaked light is incident.

The other end of the optical fiber 32 is branched into two output ends. The leaked light emitted from one output end enters the optical sensor 30a via the filter 38a, and the leaked light emitted from the other output end enters the optical sensor 30b via the filter 38b. Here, the filter 38a
Is composed of three filters, that is, a filter for transmitting the light of the g-line, the h-line and the i-line, a dummy filter, and a neutral density filter, and light of a wavelength range including the light of the g-line, the h-line and the i-line. Through. The filter 38b is composed of three filters, that is, a filter that transmits the light of the g-line, the h-line, and the i-line, a filter that transmits the light of the i-line, and a neutral density filter, and includes only the light of the i-line. Transmits light in the wavelength range.

Here, the illuminance of the leaked light is monitored by a plurality of wavelengths, that is, g is detected by the optical sensor 30a.
Line, h line and i line light illuminance is detected and the optical sensor 30b
The illuminance of the i-line light is detected by means that the decrease in the output of the light source 1 with time is generally caused by the decrease in the output of light with a short wavelength (deterioration with time) earlier, and the type of resist. This is because the sensitivities to wavelengths are different.

The detection signal of the illuminance of the leaked light detected by the optical sensors 30 a and 30 b is input to the power supply control device 34 for controlling the amount of power supplied to the light source 1, and based on the control signal from the power supply control device 34. Power source 36 to light source 1
The amount of power supplied to the is controlled. That is, the optical sensor 30
Based on the detection signals from a and 30b, the illuminance of the illumination light from the light source 1, that is, the light in the wavelength range including the light of the g line, the h line, and the i line, or the light in the wavelength range including only the light of the i line. Power supply device 36 so that the illuminance of
Control.

The divergent light beam from the light source image formed at the second focal position of the elliptic mirror 2 is converted into a substantially parallel light beam by the relay lens 5 and is incident on the relay lens 10. A neutral density filter 7 is arranged between the relay lens 5 and the relay lens 10 so as to be movable back and forth with respect to the optical path. The neutral density filter 7 is arranged in the optical path when exposing the plate P coated with a highly sensitive photoresist. The main control system 20 controls the drive device 18 to control the arrangement of the neutral density filter 7 in the optical path.

A light-absorbing plate 8b as a light-absorbing member is arranged in the traveling direction of the light reflected by the neutral density filter 7.
The light passing through the neutral density filter 7 is condensed again via the relay lens 10. The light guide 1 is located near this condensing position.
One incident end 11a is arranged. In this way, the light incident on the incident end 11a of the light guide 11 propagates through the inside thereof, and then is split and emitted from the five emission ends 11b to 11f.

Ejection ends 11b to 11f of the light guide 11
The divergent light flux emitted from the collimator lens 12b-
12f, neutral density filters 14b to 14f, fly-eye integrators 15b to 15f, aperture stops 16b to 16
f, the mask M is illuminated in a superimposed manner through the half mirrors 27b to 27f and the condenser lens systems 17b to 17f in this order. That is, a plurality of illumination optical systems IL are arranged in the Y-axis direction on the mask M (a total of five in FIG. 1).
Illuminates a trapezoidal area of.

The light from each illumination area on the mask M includes a plurality of projection optical units PL1 to PL5 (a total of five in FIG. 1) arranged along the Y-axis direction so as to correspond to each illumination area.
The light enters the projection optical system PL composed of PL5.

In this way, the mask M and the plate P are moved to the projection optical system PL including the plurality of projection optical units PL1 to PL5 by the action of the scan driving system on the mask stage MS side and the scan driving system on the plate stage PS side. By moving integrally in the same direction (X-axis direction), the entire pattern area on the mask M is transferred (scanning exposure) to the entire exposure area on the plate P.

Here, in the fifth embodiment,
A plate coated with a resist that is sensitive only to light in the wavelength range (wavelength distribution) including i-line, or a resist that is sensitive only to light in the wavelength range (wavelength distribution) including g-line, h-line, and i-line. It is assumed that P is used.

Therefore, in the exposure apparatus according to the fifth embodiment, the light sensor 30a detects the illuminance of the light in the wavelength range including the light of the g-line, the h-line and the i-line, and illuminates from the light source 1. The light is controlled so that the illuminance of light in the wavelength range including the light of the g-line, the light of the h-line and the light of the i-line becomes constant. Therefore, g
In the case of using the plate P coated with a resist having sensitivity only to light in the wavelength range including the X-ray, the H-line, and the i-line, the illumination light on the plate P by the illuminance sensor 24 includes g-line and h-line. And the illuminance of light in the wavelength range including the i-line is detected. The detected value is the main control system 20 of the illumination optical system IL.
To the neutral density filter 14b-
14f to control the illuminance of the illumination light on the plate P to g
The plate stage PS on which the plate P is mounted and the mask M are mounted by setting the optimum sensitivity according to the sensitivity of the resist that is sensitive only to light in the wavelength range including the X-ray, the H-line, and the i-line. The mask stage MS can be exposed while maintaining the moving speed (scanning speed) of the mask stage MS at the maximum speed, and the maximum throughput can be obtained.

Further, the light sensor 30b detects the illuminance of the light in the wavelength range including the light of only the i-line, and the illuminance of the light in the wavelength range including the light of the i-line among the illumination light from the light source 1 is constant. Are controlled to become. Therefore, in the case of using the plate P coated with a resist having sensitivity only to light in the wavelength range including only i-line, the illuminance sensor 24 allows the illumination light on the plate P to have a wavelength range including only i-line. Detects the illuminance of light. Then, this detected value is input to the main control system 20 of the illumination optical system IL, and the driving device 19 controls the neutral density filters 14b to 14f so that the illuminance of the illumination light on the plate P falls within a wavelength range including only the i-line. By setting the optimum sensitivity according to the sensitivity of the resist that is only sensitive to light, the moving speed (scanning speed) of the plate stage PS on which the plate P is mounted and the mask stage MS on which the mask M is mounted is maximized. The exposure can be performed while maintaining the speed, and the highest throughput can be obtained.

In the exposure apparatus according to the fifth embodiment, when the illuminance sensor 24 detects the illuminance of the illumination light on the plate P, the illuminance sensor 24 detects the illuminance of the g-line, h-line and i-line. Although both the light and the light in the wavelength range including only the i-line are detected, specifically, only the first illuminance sensor that detects the light in the wavelength range including the g-line, the h-line and the i-line and the i-line are detected. A method of forming an illuminance sensor 24 by arranging a second illuminance sensor for detecting light in a wavelength range including the same on a plate stage, and a wavelength branching means including, for example, a dichroic mirror is provided in the illuminance sensor. G line, h line and i
While guiding the light in the wavelength range including the line to the first illuminance sensor,
A method of guiding light in the wavelength range including only the i-line to the second illuminance sensor, a wavelength range including a g-line, h-line, and i-line that guides the light to the illuminance sensor by providing a wavelength filter switchable immediately before the illuminance sensor. There is a method of switching to the light of the wavelength range and the light of the wavelength range including only the i-line.

Further, in the exposure apparatus according to the fifth embodiment, the plate is detected based on the illuminance detected by the illuminance sensor 29b which detects the illuminance at the position optically conjugate with the plate P during exposure. The illuminance on P can be obtained. Therefore, the illuminance on the plate can be detected even during the exposure without lowering the throughput, and the plate stage PS on which the plate P is mounted can be detected.
Also, the exposure can be performed while maintaining the moving speed (scanning speed) of the mask stage MS on which the mask M is placed at the maximum speed.

Next, a method of manufacturing a microdevice using the exposure apparatus according to the embodiment of the present invention in a lithography process will be described. FIG. 10 is a flowchart of a method for obtaining a semiconductor device as a micro device. First, in step S40 of FIG. 10, a metal film is deposited on one lot of wafers. Next step S
At 42, photoresist is applied to the metal film on the one lot of wafers. After that, in step S44, the exposure apparatus according to the embodiment of the present invention is used to form an image of the pattern on the mask M via the projection optical system (projection optical unit) of each shot on the wafer of the one lot. The areas are sequentially exposed and transferred. That is, the mask M is illuminated by using the illuminating device, and the image of the pattern on the mask M is projected onto the substrate and exposed and transferred by using the projection optical system.

Then, in step S46, the first
After the photoresist on the lot of wafers has been developed, in step S48, the resist pattern is used as a mask on the wafer of the one lot to perform etching so that the circuit pattern corresponding to the pattern on the mask is formed on each wafer. It is formed in each upper shot area. After that, a device such as a semiconductor element is manufactured by forming a circuit pattern on an upper layer. According to the above-described semiconductor device manufacturing method, it is possible to obtain a semiconductor device having an extremely fine circuit pattern with high throughput.

In the exposure apparatus according to the embodiment of the present invention, a liquid crystal display element as a microdevice is obtained by forming a predetermined pattern (circuit pattern, electrode pattern, etc.) on a plate (glass substrate). You can also Hereinafter, an example of the technique at this time will be described with reference to the flowchart in FIG. FIG. 11 shows
9 is a flowchart for explaining a method of manufacturing a liquid crystal display element as a microdevice by forming a predetermined pattern on a plate using the exposure apparatus of the present embodiment.

In the pattern forming step S50 of FIG. 11, a so-called photolithography step is performed in which the mask pattern is transferred and exposed onto a photosensitive substrate (such as a glass substrate coated with a resist) using the exposure apparatus of this embodiment. To be done. By this photolithography process, a predetermined pattern including a large number of electrodes and the like is formed on the photosensitive substrate. Thereafter, the exposed substrate is subjected to a developing process, an etching process, a reticle peeling process, and the like to form a predetermined pattern on the substrate, and a next color filter forming process S52.
Move to.

Next, in the color filter forming step S52, R (Red), G (Green), B (Blue)
A plurality of sets of three dots corresponding to the above are arranged in a matrix, or a set of filters of three stripes of R, G, and B are arranged in the horizontal scanning line direction to form a color filter. Then, the color filter forming step S52
After that, the cell assembling step S54 is executed. In the cell assembly step S54, a liquid crystal panel (liquid crystal cell) is assembled using the substrate having the predetermined pattern obtained in the pattern formation step S50, the color filter obtained in the color filter formation step S52, and the like.

In the cell assembling step S54, for example, a liquid crystal is injected between the substrate having the predetermined pattern obtained in the pattern forming step S50 and the color filter obtained in the color filter forming step S52 to form a liquid crystal panel. (Liquid crystal cell) is manufactured. After that, the module assembly step S5
At 6, the components such as the electric circuit and the backlight for performing the display operation of the assembled liquid crystal panel (liquid crystal cell) are attached to complete the liquid crystal display element. According to the method of manufacturing a liquid crystal display element described above, a liquid crystal display element having an extremely fine circuit pattern can be obtained with high throughput.

[0120]

According to the scanning projection exposure apparatus of the present invention, the illuminance detecting means provided in the illuminating device detects the illuminance of the light from the light source, and the light from the light source is constant based on the detected value. Control so that the illuminance becomes. Then, based on the sensitivity of the photosensitive material applied on the substrate, the light of a certain illuminance emitted by the illuminating device is reduced by the dimming means arranged in the optical path between the illuminating device and the substrate. Dimming. Therefore, regardless of the sensitivity of the substrate coated with the photosensitive material, the scanning speed of the mask stage and the substrate stage during exposure can be maintained at the maximum speed, and the maximum throughput can be obtained.

Further, according to the exposure method of the present invention, since the mask is illuminated with the illuminance based on the sensitivity of the photosensitive material applied to the substrate in the illumination step, the mask stage and the substrate stage are scanned during the exposure. The speed can be maintained at the maximum speed and the maximum throughput can be obtained.

[Brief description of drawings]

FIG. 1 is a perspective view showing an overall schematic configuration of an exposure apparatus according to a first embodiment of the present invention.

FIG. 2 is a side view of the illumination optical system according to the first embodiment of the present invention.

FIG. 3 is a diagram showing shapes of a light absorption plate and a heat sink according to the first embodiment of the present invention.

FIG. 4 is a configuration diagram of an illumination optical system of an exposure apparatus according to a second embodiment of the present invention.

FIG. 5 is a configuration diagram of a light source unit of an illumination optical system according to a second embodiment of the present invention.

FIG. 6 is a configuration diagram of an illumination optical system of an exposure apparatus according to a third embodiment of the present invention.

FIG. 7 is a configuration diagram of an illumination optical system of an exposure apparatus according to a fourth embodiment of the present invention.

FIG. 8 is a configuration diagram of a light source unit of an illumination optical system according to a fourth embodiment of the present invention.

FIG. 9 is a configuration diagram of an illumination optical system of an exposure apparatus according to a fifth embodiment of the present invention.

FIG. 10 is a flowchart of a method for manufacturing a semiconductor device as a micro device according to an embodiment of the present invention.

FIG. 11 is a flowchart of a method for manufacturing a liquid crystal display element as a microdevice according to an embodiment of the present invention.

[Explanation of symbols]

1 ... Light source, 3 ... Reflecting mirror, 7 ... Dark filter, 8a, 8b
... Light-absorbing plate, 9a, 9b ... Heat sink, 11 ... Light guide, 14b-14f ... Dimming filter, 20 ... Main control system, 24 ... Illuminance sensor, 30, 30a, 30b, 33 ...
Optical sensor, 32 ... Optical fiber, 34 ... Power supply control device, 3
6 ... Power supply device, 38a, 38b ... Filter, DP ... Pattern, M ... Mask, P ... Plate, IL ... Illumination optical system,
PL ... Projection optical system, PL1-PL5 ... Projection optical unit, MS ... Mask stage, PL ... Plate stage.

Claims (9)

[Claims] 1. A light source and an illuminance detection means for detecting the illuminance of light from the light source, and control so that the light from the light source has a constant illuminance based on a detection value from the illuminance detection means. An illuminating device, a projection optical system for projecting a pattern formed on a mask onto a substrate, and a mask stage on which the mask can be placed and is movable with respect to the projection optical system. A substrate stage on which the substrate can be placed and is movably provided with respect to the projection optical system, and arranged in an optical path between the illumination device and the substrate,
Based on the sensitivity of a photosensitive material applied on the substrate, a dimming unit for dimming the light from the lighting device toward the substrate,
And a control unit for controlling the dimming unit so that the scanning speeds of the mask stage and the substrate stage maintain the maximum speed. 2. The illuminating device comprises a plurality of light sources and a plurality of illuminance detecting means for detecting the illuminance of each light source, and the light from each of the light sources is constant based on the detection value of each illuminance detecting means. 2. The scanning exposure apparatus according to claim 1, which is controlled so that the illuminance becomes. 3. The illuminating device includes a reflecting mirror that reflects the illuminating light from the light source to the mask side, and the illuminance detection means illuminates the illuminating light from the light source based on leak light from the reflecting mirror. 3. The scanning exposure apparatus according to claim 1 or 2, wherein the illuminance is detected. 4. The scanning exposure apparatus according to claim 1, further comprising an illuminance sensor that detects illuminance on the substrate. 5. The scanning exposure apparatus according to claim 4, wherein the illuminance sensor for detecting the illuminance on the substrate is mounted on the substrate stage. 6. The scanning exposure apparatus according to claim 4, wherein the illuminance sensor for detecting illuminance on the substrate is a sensor for detecting illuminance at a position optically conjugate with the substrate. 7. The scanning exposure according to claim 4, wherein the illuminance sensor detects illuminances of light in a plurality of wavelength bands having different wavelength distributions from each other. apparatus. 8. The dimming unit controls the illuminance of the illumination light on the substrate to be the maximum illuminance when the scanning speed of the mask stage and the substrate stage cannot maintain the maximum speed. 9. The scanning exposure apparatus according to claim 1, wherein the scanning exposure apparatus is controlled. 9. An exposure method using the scanning exposure apparatus according to claim 1, further comprising an illumination step of illuminating a mask using the illumination apparatus, and the projection optical system. And a projection step of projecting the pattern image of the mask onto the substrate by using the exposure method.