JP2003273089A - Manufacturing method of semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To attain a processing of high anisotropy and low gate breakdown rate in dry etching. <P>SOLUTION: Plasma is generated by ECR resonance of electromagnetic waves and a magnetic field generated, by supplying UHF electric power to a micro-strip line 4 installed on a surface on an atmosphere side of a dielectric 2 separating the vacuum inside and on the outside, and a conductive film is dry-etched with the plasma. <P>COPYRIGHT: (C)2003,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetic field plasma generator used in a dry etching process for manufacturing a semiconductor device, and a dry etching process for wiring of a semiconductor device using the magnetic field plasma generator. The present invention relates to a method of manufacturing a semiconductor device including the semiconductor device.

[0002]

2. Description of the Related Art Conventionally, a magnetic field plasma generator has been used in the process of plasma treatment used in the manufacture of semiconductor devices. Regarding this magnetic field plasma generator, for example, JP-A-8-337887 and JP-A-9-321.
031.

Japanese Unexamined Patent Publication No. 8-337887 discloses a disk-shaped electrode 1 to which a high frequency is applied, which is installed on the surface facing the disk-shaped electrode 1 grounded to the earth and the dielectric 2 and the dielectric as shown in FIG. A microstrip antenna consisting of 3 (hereinafter abbreviated as MSA) is evacuated by electron cyclotron resonance (ECR) between an electromagnetic wave emitted from the MSA when a microwave is supplied as a high frequency and a magnetic field formed by a solenoid coil. The plasma of the reactive gas is formed in the processing chamber. The sample is processed by irradiating the sample held on the sample table with this plasma. The reactive gas is supplied from a dielectric shower plate structure provided on the surface facing the sample. Also, MSA
Has a structure installed on the atmosphere side of a dielectric that separates the inside and the outside of the vacuum processing chamber.

Japanese Unexamined Patent Publication No. 9-321031 forms plasma by ECR resonance of an electromagnetic wave radiated from an MSA provided by supplying a UHF wave to the MSA installed in a vacuum processing chamber and a magnetic field formed by a solenoid coil. Is.

[0005]

In recent years, in fine processing of semiconductors, processing at a low pressure of 0.5 Pa or less is essential for anisotropic etching. Also, in order to prevent gate breakdown due to charge-up, when etching gate wiring or metal wiring electrically connected to the gate wiring,
It is important to (1) reduce the ion current density on the wafer and (2) make the in-plane distribution of the ion current density uniform.

However, in the conventional magnetic field plasma generator, it was difficult to carry out stable and uniform discharge at a low ion current density under a low pressure condition. The above-mentioned JP-A-8-337.
Since 887 uses microwaves, its wavelength is shorter than that of the processing chamber, and plasma in multiple modes can exist in the processing chamber. Therefore, it was found that under the condition of low voltage and low ion current, the plasma was frequently dislocated between modes in which the plasma could exist, and the discharge was not stable. In addition, the above-mentioned JP-A-9
-321031 has the MSA installed in the vacuum processing chamber, so a high-density plasma is generated near the end of the antenna due to the strong electric field at the end of the disk-shaped electrode 3 of the MSA due to the near field, and the low-voltage region. It was found that a uniform plasma could not be generated at.

Further, if the in-plane distribution of the ion current density becomes non-uniform, the in-plane etching rate becomes non-uniform, which in turn affects the yield.

An object of the present invention is to provide a magnetic field plasma generator which has a uniform ion current density and an in-plane distribution of an etching rate, which can perform stable and uniform discharge under a low pressure condition and a low ion current density, and this device. It is to provide a method of manufacturing a semiconductor device using the.

[0009]

[Means for Solving the Problems] The above objects are (1) an antenna (MSA) installed outside a vacuum processing chamber through a separation plate.
By supplying UHF waves of 300MHz or more and 1GHz or less to
This is achieved by using the method of forming plasma by the ECR resonance of the electromagnetic wave emitted from SA and the magnetic field formed by the solenoid coil. Since UHF waves are used, the wavelength is the same as the inside diameter of the processing chamber, and only single mode plasma can exist. Therefore, instability of plasma due to dislocation between modes is eliminated. In addition, the structure is such that the MSA is installed on the atmosphere side of the dielectric (separator) that separates the inside of the vacuum processing chamber and the outside of the atmosphere side where the pressure is higher than the vacuum processing chamber, so that the disk-shaped electrode MSA end Generation of high-density plasma due to a strong electric field is suppressed, and uniform plasma can be generated even at low pressure. In the present specification, UHF
The band refers to a frequency region of 300 MHz or more and 1 GHz or less.

Further, by setting the distance between the shower plate for supplying the gas and the sample table to be less than 100 mm, the difference in CD gain between the dense pattern and the sparse pattern can be reduced. Furthermore, set the shower plate diameter to 3 / of the wafer diameter.
By setting it to 4 or less, the difference in CD gain can be further reduced.

(2) In addition, the frequency in the UHF band is used and 0.
In low pressure conditions 1Pa～0.5Pa, and, 0.6mA / cm ² ~2mA / c
It is achieved by performing plasma treatment at a low ion current density of m ² . Pressure of 0.1 Pa or more and ion current density of 0.6 mA /
By setting it to be cm ² or more, a practical etching rate can be maintained. On the other hand, to reduce charge-up,
The ion current density should be ² mA / cm ² or less, and the pressure should be 0.5 Pa or less to achieve anisotropic etching.

FIG. 5 shows the discharge characteristics when the frequency applied to the MSA is changed under the condition of 0.5 Pa. At a frequency of 1 GHz or more, a low density region of ² mA / cm ² or less cannot be realized at a low pressure of 0.5 Pa or less due to the problem of discharge instability. Further, at a frequency of 300 MHz or less, since the radiation efficiency of electromagnetic waves is poor, plasma discharge cannot be maintained in this structure in which plasma is not generated by the near-field electric field. That is, it can be seen that the plasma having a low ion current density of ² mA / cm ² or less at a low pressure of 0.5 Pa can be efficiently generated only in the region of 300 MHz or more and 1 GHz or less.

(3) Furthermore, the convex E as seen from the antenna
This is achieved by forming a magnetic field distribution so as to form a CR plane and performing plasma processing. In particular, it is effective if the intersection between the ECR surface and the shower plate is inside the antenna diameter. By doing so, ECR resonance occurs in the central portion, the plasma density in the central portion increases, and a uniform distribution can be formed.

Specifically, a small-diameter coil is installed above the antenna. The inner diameter of this small-diameter coil is smaller than the antenna diameter.

When the plasma discharge is ignited, it may be controlled so that the ECR surface is concave when viewed from the antenna and the ECR surface is convex after ignition. This is because the ignitability of plasma discharge is poor in the case of a convex ECR surface and good in the case of a concave ECR surface. In particular, when the intersection between the ECR surface and the shower plate is outside the antenna diameter, the ignitability is improved. Such control of the uneven surface of the ECR surface can be performed by controlling the magnetic field coil on the outer peripheral portion of the sample table.

(4) Furthermore, particularly when the plasma density has an outer height distribution, it can be achieved by providing a cavity having a height of 30 mm or more on the back surface of the antenna. By doing so, the concentration of the electric field on the outer periphery can be alleviated and the outer high distribution of the plasma density can be eliminated. Then, the in-plane distribution of the ion current density is made uniform, and the etching rate can be made uniform in the surface.

(5) Also, the change in plasma density during etching is monitored, and when the plasma density increases, the curvature of the convex ECR seen from the antenna is increased, and conversely, when the plasma density decreases, It is also achieved by providing feedback to the magnetic field coils so as to reduce the curvature of the convex ECR as seen from the antenna. Particularly, when the plasma density is increased, the outer peripheral high plasma distribution is obtained, and when the plasma density is decreased, the central high plasma distribution is obtained. When etching a multilayer film, the reaction product released into the plasma changes depending on the type of the film to be etched, and the plasma density changes. Target.

[0018]

DESCRIPTION OF THE PREFERRED EMBODIMENTS (Embodiment 1) FIG. 1 shows an example of a dry etching apparatus of the present invention.

In this apparatus, a plasma of a reactive gas is formed in the vacuum processing chamber by electron cyclotron resonance between the electromagnetic wave emitted from the MSA 4 and the magnetic field formed by the solenoid coils 5 and 6. This plasma
The sample 8 is processed by irradiating the sample 8 held on the sample table 7. By supplying the reactive gas from the shower plate 9 installed on the surface facing the sample, it is possible to uniformly supply the reactive gas. In addition, MSA is placed on the atmosphere side of the dielectric 10 that separates the inside and the outside of the vacuum processing chamber.
The provision of 4 suppresses the generation of high-density plasma at the end of the disk-shaped electrode 3 due to the near field. In addition, it is possible to prevent the characteristics of the disk-shaped electrode 3 from being changed due to corrosion and the contamination of the sample with the corrosion reaction product of the disk-shaped electrode 3. In this example, a quartz disk having a thickness of 35 mm was used as the dielectric 10.

Further, in the present apparatus, by using the UHF band high frequency as the high frequency applied to the disk-shaped electrode 3, stable plasma can be formed even with low pressure and low density plasma. Furthermore, the following two measures have been taken so that an axially symmetrical plasma most suitable for uniform plasma formation can be formed. The first point is to set the frequency of the UHF wave applied to the disk electrode 3, the diameter of the disk electrode 3, the material and thickness of the dielectric disk 2 so that the axially symmetric TM01 mode as shown in FIG. There is. In this embodiment, the frequency of the UHF wave is set to 4
50 MHz, the diameter of the disk-shaped electrode 3 is 255 mm, the dielectric 2
As the material, alumina having a thickness of 20 mm was used. The second point is a power supply unit 11 so that a high frequency power can be supplied to the disk-shaped electrode 3 as an axial target.
Has a conical shape, and the antenna is fed from the apex of the cone. Further, in this apparatus, a quartz inner cylinder 12 is inserted as a measure against metal contamination. When such a dielectric inner cylinder 12 is inserted, if the inner cylinder is slightly eccentric and installed, there is a problem that the plasma deviates from the axial symmetry. In order to solve this problem, the conductor cylinder 13 grounded to the ground potential is provided, and the length of the overlapping portion of the inner cylinder 12 and the conductor cylinder 13 defined as the earth turn-up height in FIG. It was found that the above can completely prevent it.

FIG. 4 shows the results of evaluating the discharge characteristics of chlorine gas plasma using this apparatus. For comparison, the discharge characteristics of the conventional magnetic field microwave plasma generator are also shown in FIG. As shown in FIG. 4, in the conventional magnetic field microwave plasma, the discharge became unstable as the pressure was low and the ion current density was low. But,
As in the present invention, by applying the UHF band frequency to the MSA, it is possible to perform stable and uniform discharge even in a region of low voltage and low ion current which could not be realized by the conventional magnetic field microwave plasma generator. became.

In the antenna structure of the first embodiment, as shown in FIG.
Since the electric field strength at the center is strong as shown in, the plasma density at the center becomes high when there is no magnetic field or when the magnetic field is very weak. Therefore, in order to obtain even more uniform plasma, it is necessary to increase the plasma density in the outer circumference or decrease the plasma density in the center. A method for adjusting the ECR magnetic field for increasing the plasma density in the outer circumference will be described in a second embodiment, and a method for decreasing the plasma density in the center will be described in a third embodiment.

(Embodiment 2) In this embodiment, as described above,
The method of forming the ECR magnetic field that increases the plasma density of the outer circumference is described.

FIG. 7 shows the direction of the electric field in the case of the antenna structure of the first embodiment. In this structure, a horizontal electric field is generated at the outer peripheral portion and a vertical electric field is generated at the central portion. Therefore, as shown in FIG. 8, when there is a vertical magnetic field having a level magnitude that causes electron cyclotron resonance, strong resonance occurs at the outer periphery where the electric field and the magnetic field are orthogonal to each other, so that the plasma density at the outer periphery can be increased. . To create such a magnetic field,
Like the solenoid coil 6 of, the upper end surface is a disc-shaped conductor 3
It is necessary to mount a solenoid coil that is higher than the lower end of the shower plate and covers the outer periphery of the shower plate from the antenna. The distribution of the ion current density can be adjusted by adjusting the magnitude of the current of the solenoid coil 6 and increasing or decreasing the magnitude of the vertical magnetic field.

For example, when the region where the magnetic field intensity is weak and electron sacrotron resonance occurs (hereinafter abbreviated as ECR surface) is outside the vacuum processing chamber as in condition 1, the ion current density distribution at the center height is as shown in FIG. Further, when the magnetic field strength is strong and the ECR surface completely enters the inside of the vacuum processing chamber as in condition 3, the outer circumference has a high distribution. In particular, when the magnetic field strength is strong on the outer circumference and the ECR surface exists only on the outer circumference (condition 2), highly uniform plasma can be realized as shown in FIG.

(Embodiment 3) In this embodiment, as described above, a method of lowering the central plasma density will be described.

When a divergent magnetic field as shown in FIG. 10 is used, the plasma diffuses in the outer peripheral direction along the magnetic field, so that the central plasma density can be reduced. In order to create such a divergent magnetic field, the solenoid coil 14 with a small inner diameter is
I found that it can be achieved by installing it on the top of the.

FIG. 11 shows the relationship between the inner diameter of the solenoid coil 14 and the uniformity. When the inner diameter of the solenoid coil is larger than the antenna diameter, the in-plane distribution of ion current density on the wafer takes a positive value indicating a medium height even if the coil current is increased.
Since the inner diameter becomes smaller than the antenna diameter of 255 mm, the uniformity changes depending on the coil current, and as the current increases, the distribution within the wafer surface becomes uniform due to the positive uniformity showing a middle-high distribution. It can be seen that the uniformity can be adjusted to 0%, which indicates that, and further, the negative uniformity can be adjusted to exhibit the outer height distribution. From this, it was found that it is suitable to install the solenoid coil 14 having an inner diameter smaller than the antenna diameter in order to generate uniform plasma.

(Embodiment 4) This embodiment shows the relationship between the convex shape of the ECR surface and the ion current density.

Using the solenoid coils of Examples 2 and 3, the in-plane distribution of ion current density was made uniform. By adjusting the currents of the two solenoid coils, as shown in Fig. 12, a magnetic field with a flat ECR surface (condition 1), a magnetic field adjusted so as to be convex downward (condition 2), and further increasing the curvature, the outer peripheral portion FIG. 13 shows the in-plane distribution of the ion current density in the case where the ECR surface of No. 3 is a magnetic field (condition 3) which is outside the vacuum processing chamber. Even under the condition that the curvature of the ECR surface is large, the ECR of the outer peripheral part
If the surface is not outside the vacuum processing chamber, only a distribution of peripheral height is obtained. It was found that a uniform to medium-high distribution can be obtained only under the condition that the outer peripheral part of the ECR surface is outside the vacuum processing chamber.

Next, the ECR surface was made convex upward, and the in-plane distribution of the ion current density was measured. It was confirmed that in this device configuration, the in-plane distribution of the ion current density becomes uniform only under the condition that the central portion of the ECR surface is outside the vacuum processing chamber as in the case of the second embodiment.

(Embodiment 5) In this embodiment, a method of lowering the ion current density distribution at an outer height to improve the in-plane uniformity will be described.

There is the following method for making the ion current density uniform even with the upward convex magnetic field of the condition 3 of the second embodiment. As shown in FIG. 14, the disk-shaped electrode 1 has a hollow portion 1 on the ring.
5 is a method of reducing the electric field strength on the outer circumference of the disk-shaped electrode 3 and lowering the ion current density on the outer circumference.
The in-plane distribution of the ion current density on the sample 8 at this time is shown in FIG.
Shown in. It was found that when the size of the cavity is 30 mm or more, the plasma density at the outer circumference is lowered and the outer height distribution is relaxed. It was also found that the plasma density itself increased at this time.

(Embodiment 6) This embodiment shows the relationship between ignition of plasma discharge and ECR surface of plasma treatment.

When the downwardly convex ECR magnetic field of Example 3 is used, there is a problem in that the plasma ignitability is poor. In order to solve this problem, the plasma is ignited in such a manner that the ECR surface is convex upward, that is, the concave ECR surface is seen from the antenna, and then the in-plane distribution of the ion current density is changed. A method of adjusting the magnetic field distribution so as to be uniform was examined.

In order to increase the upward convex curvature of the ECR surface, a solenoid coil having an inner diameter larger than the processing chamber diameter is provided below the antenna surface as in the solenoid coil 16 of FIG. 16, and a high current is passed through this. To be achieved.
Using such a coil, create an ECR magnetic field that is convex upward, 1
200W UHF power is applied for 1 second to ignite the plasma and then downward convex ECR magnetic field, that is, convex ECR seen from the antenna
A uniform plasma was generated by switching the magnetic field distribution so that the surface became a plane. As a result, it was confirmed that good ignitability and stable uniform discharge were maintained.

In order to make the plasma uniform and to improve the plasma ignitability by controlling the magnetic field in Examples 2 to 6, not only etching of the wiring material such as the gate metal, but also
It is also effective in etching insulating film materials such as oxide films and low dielectric constant films.

(Embodiment 7) FIG. 17 shows the relationship between the ion current density and the curvature of the downward convex ECR magnetic field measured by the apparatus of Embodiment 3 and the uniformity of the in-plane distribution of the ion current density.
When the UHF power is increased and the ion current density is increased under the same conditions of the downward convex ECR magnetic field, it is found that the uniformity of the ion current density in-plane distribution changes from positive, which represents middle height, to negative, which represents outer circumference height. .

From this, assuming that a sample having a multilayer film structure is to be etched, the material to be etched changes during the etching, so that the type of the etching reaction product released into the plasma changes, so that the ion current density changes. It is expected that the ionic current density changes and the in-plane uniformity of the ion current density decreases. Therefore, in order to maintain the uniform in-plane distribution of the ion current density even during the etching of the sample having the multilayer structure, it is necessary to change the curvature of the downward convex ECR magnetic field with the change of the ion current density.

To deal with this, as shown in FIG. 18, the ion current density is calculated from the relationship between the bias power applied to the sample and the peak-to-peak voltage (difference between the minimum value and the maximum value of the bias voltage). Using the results, we calculated the optimum value of the curvature of the downward convex ECR magnetic field and developed a system that feeds it back to the solenoid coil current. By using this system, it is possible to keep the ion current density in-plane distribution uniform during etching of a sample having a multilayer structure.

(Embodiment 8) In this embodiment, an example of etching a multilayer wiring is shown. Using the apparatus of Example 7, the metal wiring having a multi-layer structure was etched. As the sample to be etched, as shown in FIG. 19, titanium nitride (TiN) 18 and aluminum-copper-silicon mixed crystal (Al-Cu-Si) 19 were formed on silicon oxide 15 deposited on the gate wiring by CVD. , Titanium nitride (TiN) 20
1 was used in this order, and a resist mask 21 was formed on it. This sample was added to Cl ₂ , BCl ₃ , and CH ₄
Using a plasma of a mixed gas of 4% Ar diluted gas (hereinafter abbreviated as NR) at a low pressure of 0.5 Pa and a low ion current density of 1 mA / cm ² , a UHF power of 800 W and a sample of 40 W, 800 KHz
RF bias was applied to etch. After etching, the resist is ashed and removed by a mixed gas plasma of CF ₄ and O ₂ , and the shape after wet treatment with NMD-3 is shown in FIG.
Shown in.

The relationship between the CD gain of the sparse pattern shown in FIG. 20 and the distance between the sample and the shower plate was measured. The result is shown in FIG. Note that the CD gain means an etching pattern dimension thickening amount (thinning amount) as shown in FIG.

Under the etching conditions of the conventional apparatus in which the distance between the shower plate and the sample table is 100 mm or more, there is a problem that the CD chain of the central pattern becomes larger than that of the peripheral pattern. It can be seen that by setting the distance between them to be less than 100 mm, the CD gain of the central pattern is reduced and the difference between the CD gain of the peripheral pattern and the central pattern is reduced. The shower plate diameter shown in FIG. 1 is also an important factor for this effect. With a shower plate diameter of 170 mm, there is no effect, and the shower plate diameter is 3/4 of the wafer diameter and the shower plate diameter is 150 mm or less. It was found that the effect of reducing the CD gain appeared. Shower plate diameter 10
It was found that when the distance between the sample and the shower plate was 0 mm, the distance between the sample and the shower plate could be shortened to 60 mm, so that processing without in-plane difference of the CD gain could be performed.

FIG. 22 shows the results of measuring the breakdown of the gate of the sample etched under the conditions of a shower plate diameter of 100 mm and a distance between the sample shower plate of 60 mm. There are no black areas showing the IC chip that has undergone gate destruction. That is, it was found that by setting a low ion current density of 1 mA / cm ² or less, it is possible to realize etching without gate breakdown even at a low pressure of 0.5 Pa or less, which allows anisotropic processing.

Although the metal etching has been described here, the effect of the distance between the sample shower plates of this embodiment and the effect of the etching at a low pressure and low ion current are as follows.
The same applies to gate etching.

The dense pattern is, for example, DR.
In AM, the wiring pattern of the memory mat portion is referred to, and the sparse pattern is the wiring pattern of the peripheral circuit portion.

(Embodiment 9) FIG. 23 shows a CMOS gate processing step.
It is a figure which shows the flow of. First, silicon by the CVD method
Deposit i-Poly on the oxide film. Photo on this i-Poly
Apply resist and pattern by lithography technology
And a resist pattern is formed. This register
P as a mask⁺Ion implantation of
After that, by removing the resist and annealing,
Adjacent i-Poly layer n⁺Form a Poly-Si layer. This i-Poly
/ N⁺Si on the Poly-Si layer by CVD₃N_FourDeposit. Next
Photoresist is applied to the
Patterning is performed to form a resist pattern. This
Using the resist pattern of₃N_FourCHF layers₃/ O₂
Anisotropic etching is performed with a mixed gas / Ar plasma.
Furthermore, the resist is removed by ashing to remove Si.₃N_FourShape mask
To achieve. I-Poly / n of this sample⁺Poly-Si layer as Si ₃N_FourTo
Anisotropic etching was performed using the apparatus of Example 2 as a mask.
I went out. Anisotropic etching is Cl₂, O₂, HBr mixed
Low pressure of 0.1-0.2Pa using combined gas, 1mA / cm²Low ion of
UHF power of 800W that can obtain current density, 800KHz ・ 40W on the sample
RF bias was applied. Etching with this device
I-Poly pattern and n⁺Poly-Si pattern
It was possible to perform etching with no difference in shape. The remaining Si₃N_Four
/ Poly-Si pattern is used as a mask for phosphorus doping process
Then, a CMOS gate was formed.

[0048]

EFFECTS OF THE INVENTION With the constitution of the present invention, since a uniform and low ion current density plasma of 1 mA / cm ² or less can be realized even at a low pressure of 0.5 Pa or less, which allows anisotropic processing, there is no gate breakdown. Uniform etching is possible.

[Brief description of drawings]

FIG. 1 shows an example of a dry etching apparatus of the present invention.

FIG. 2 shows a microstrip antenna (MSA) structure.

FIG. 3 is an electric field on the disk-shaped electrode 3 of TM01 mode MSA.

FIG. 4 is a discharge stability map of the device of FIG.

FIG. 5: UHF frequency dependence of ion current density.

6 is a distribution of radiated electric field strength in the device of FIG.

7 shows the orientation of the radiated electric field in the device of FIG.

8 is an example of magnetic field lines and an ECR surface in the apparatus of FIG.

FIG. 9 shows changes in the ion current density in-plane distribution due to a magnetic field.

FIG. 10 shows an example of magnetic field lines in the case of a diverging magnetic field in a device equipped with a solenoid coil 14.

FIG. 11 shows the relationship between the inner diameter of the solenoid coil and the uniformity of the ion current density in-plane distribution.

12 is an example of an ECR surface in the device of FIG.

FIG. 13 shows changes in the in-plane distribution of ion current density due to a magnetic field.

FIG. 14 is an example of a dry etching apparatus in which a cavity is provided in the ground conductor.

15 is an in-plane distribution of ion current density of the device of FIG.

16 is an example of a device including a solenoid coil 16. FIG.

FIG. 17 shows the relationship between the curvature of the downward convex magnetic field and the uniformity of the in-plane distribution of the ion current density.

FIG. 18 is an example of a hood back circuit for keeping the ion current in-plane distribution uniform during etching of a multilayer film.

FIG. 19 is a cross-sectional structure of an etched sample of metal wiring.

FIG. 20 is a cross-sectional structure of metal wiring after etching, resist ashing removal, and wet processing.

FIG. 21: Distance between sample and shower plate and sparse pattern
CD gain relationship.

FIG. 22 shows the state of gate breakdown in a metal wiring sample etched by the device of the present invention.

FIG. 23 is a flow of a CMOS gate processing process.

[Explanation of symbols]

1 ... Disc-shaped electrode, 2 ... Dielectric material, 3 ... Disc-shaped electrode, 4 ... MS
A, 5, 6 ... Solenoid coil, 7 ... Sample stand, 8 ... Sample, 9 ... Shower plate, 10 ... Dielectric material, 11 ... Conical power supply section, 12 ... Quartz inner cylinder, 13 ... Conductor cylinder, 14 ... Solenoid coil , 15 ... Cavity, 16 ... Solenoid coil, 17 ... Silicon oxide, 18 ... Titanium nitride, 19 ... Aluminum / copper / silicon mixed crystal, 20 ... Titanium nitride,
21 ... A resist mask.

─────────────────────────────────────────────────── ─── Continuation of front page (51) Int.Cl. ⁷ Identification code FI Theme Coat (reference) H01L 27/092 (72) Inventor Kenetsu Yokokawa 1-280 Higashi Renegakubo, Kokubunji City, Tokyo Inside Hitachi Central Research Laboratory (72) Inventor Naoshi Itabashi 1-280, Higashi Koikeku, Kokubunji, Tokyo, Central Research Laboratory, Hitachi, Ltd. (72) Inventor, Kazunori Tsujimoto, 1-280, Higashi Koikeku, Kokubunji, Tokyo (72) Invention, Central Research Laboratory, Hitachi, Ltd. Person Shinichi Tachi 1-280, Higashi Koikekubo, Kokubunji, Tokyo Metropolitan Research Center, Hitachi Ltd. F-term (reference) 4M104 BB01 BB40 CC05 DD65 DD66 DD78 DD81 EE05 EE17 GG09 GG10 5F004 AA01 BA14 BB07 BB14 CA06 CB05 DB02 DB08 5F09 H33HH04 LL04 MM05 MM08 MM13 MM15 MM19 QQ08 QQ09 QQ10 QQ12 QQ16 QQ28 QQ59 QQ65 QQ7 3 RR04 RR06 SS11 VV16 WW05 WW08 5F048 AC03 BB03 BB05 BB06 BB18 BF02 BF07 BF11

Claims (11)

[Claims] 1. A step of forming a conductive film on a substrate, a step of placing the substrate in a processing chamber, a UHF electric power being applied to generate plasma in the processing chamber, and the processing chamber having a temperature of 0.1 or more. At a pressure of 0.5 Pa or less,
0.6 mA / cm ² or more 1.0 mA / cm ² or less of the ion current density, a method of manufacturing a semiconductor device characterized by a step of dry etching the conductive layer, by using the plasma. 2. The method for manufacturing a semiconductor device according to claim 1, wherein a coil is provided on the outer periphery of the processing chamber, and the current flowing through the coil is adjusted. 3. The plasma is generated by utilizing ECR resonance, and the ECR surface is located outside the processing chamber on the central axis of the substrate and inside the processing chamber at the outer peripheral portion. The method for manufacturing a semiconductor device according to claim 1. 4. The plasma is generated by utilizing ECR resonance, and the ECR surface is inside the processing chamber on the central axis of the substrate and outside the processing chamber in the outer peripheral portion. The method of manufacturing a semiconductor device according to claim 1. 5. A method comprising: a step of forming a conductive film on a semiconductor substrate; and a step of etching the conductive film with plasma in a processing chamber with a downwardly convex ECR surface formed. Manufacturing method of semiconductor device. 6. The method of manufacturing a semiconductor device according to claim 5, wherein the plasma is generated by applying UHF power. 7. The manufacturing of a semiconductor device according to claim 5, wherein the downwardly convex ECR surface is formed by applying a predetermined current to a solenoid coil provided on the outer periphery of the processing chamber. Method. 8. A processing chamber, a coil provided outside the processing chamber, an antenna for supplying an electromagnetic wave for converting a gas in the processing chamber into plasma, and the antenna and the processing chamber are separated from each other. Using a dry etching apparatus having a separating plate and a cavity having a height of 30 mm or more, which is provided at a position apart from the center of the antenna, and a convex ECR surface is provided in the processing chamber. A method for manufacturing a semiconductor device, which comprises dry-etching a conductive film formed on a semiconductor substrate while forming the conductive film. 9. A step of installing a semiconductor substrate on which a conductive film is formed in a processing chamber, a step of igniting plasma in a state where the ECR surface is convex upward in the processing chamber, and a step of lowering the ECR surface downward. And a step of dry-etching the conductive film with the plasma in a convex shape. 10. A step of forming a conductive film on a semiconductor substrate, and an in-plane distribution of ion current density is calculated in the processing chamber, and based on the calculation result, a solenoid coil provided on the outer periphery of the processing chamber. ECR that is convex downward while controlling the current of
And a step of etching the conductive film with plasma in a state where the surface is formed. 11. A high-frequency bias is applied to a sample table provided in the processing chamber and in which the semiconductor substrate is installed,
11. The method of manufacturing a semiconductor device according to claim 10, wherein the in-plane distribution of the ion current density is obtained by monitoring the peak-to-peak voltage of the high frequency bias.