JP4369449B2 - Manufacturing method of semiconductor device - Google Patents

Description

  The present invention relates to a magnetic field plasma generator used in a dry etching process when manufacturing a semiconductor device, and a method of manufacturing a semiconductor device including a dry etching process such as wiring of a semiconductor device using the magnetic field plasma generator. .

  Conventionally, a magnetic field plasma generator has been used in a plasma processing step used in manufacturing a semiconductor device. This magnetic field plasma generator is described in, for example, Patent Document 1 and Patent Document 2.

  Patent Document 1 describes a disk-like electrode to which a high frequency is applied, which is disposed on a surface facing a disk-like electrode 1 grounded to earth, a dielectric 2 and a dielectric as shown in FIG. Electron cyclotron resonance (ECR) between an electromagnetic wave radiated from the MSA and a magnetic field formed by a solenoid coil when a microwave is supplied as a high frequency to a microstrip antenna (hereinafter abbreviated as MSA) comprising the electrode 3, A reactive gas plasma is formed in the vacuum processing chamber. The sample is processed by irradiating the sample held on the sample stage with this plasma. The reactive gas is supplied from a dielectric shower plate structure installed on the surface facing the sample. The MSA is installed on the atmosphere side of a dielectric that separates the inside and outside of the vacuum processing chamber.

  Patent Document 2 describes that a plasma is formed by an electromagnetic wave radiated from an MSA by supplying a UHF wave to the MSA installed in a vacuum processing chamber and an ECR resonance of a magnetic field formed by a solenoid coil. Is.

JP-A-8-337887 JP-A-9-321031

  In recent years, in microfabrication of semiconductors, processing at a low pressure of 0.5 Pa or less is essential for anisotropic etching. In order to prevent gate breakdown due to charge-up, when etching a gate wiring or a metal wiring electrically connected to the gate wiring, (1) reducing the ion current density on the wafer and (2) reducing the ion current density. Two things that make the in-plane distribution uniform are important.

  However, in the conventional magnetic field plasma generator, it is difficult to perform stable and uniform discharge at a low ion current density under a low pressure condition. The above-mentioned JP-A-8-337887 uses a microwave, so that the wavelength is shorter than that of the processing chamber, and a plurality of modes of plasma can exist in the processing chamber. For this reason, it was found that, under conditions of low pressure and low ion current, dislocations frequently occur between modes in which plasma can exist, and the discharge is not stable. In addition, since the above-mentioned Japanese Patent Laid-Open No. 9-321031 has the MSA installed in the vacuum processing chamber, a high electric field at the end of the disc-shaped electrode 3 of the MSA due to the near field causes a high density near the antenna end. It was found that plasma was generated and uniform plasma could not be generated in the low pressure region.

  In addition, if the in-plane distribution of the ion current density becomes non-uniform, the in-plane etching rate becomes non-uniform, which in turn affects the yield.

  An object of the present invention is to use a magnetic field plasma generator and a device capable of uniform discharge in an in-plane distribution of ion current density and etching rate, under a low pressure condition, and stable and uniform discharge at low ion current density. An object of the present invention is to provide a method for manufacturing a semiconductor device.

  The above object is formed by (1) electromagnetic waves radiated from the MSA by supplying UHF waves of 300 MHz to 1 GHz to the antenna (MSA) installed outside the vacuum processing chamber via the separation plate, and a solenoid coil. This is achieved by using a method of forming a plasma by ECR resonance of a magnetic field. Since UHF waves are used, the wavelength is the same as the inside diameter of the processing chamber, and only single-mode plasma can exist. Therefore, plasma instability due to intermode dislocation is eliminated. Also, the MSA end of the disc-shaped electrode due to the near field is constructed by installing an MSA on the atmosphere side of the dielectric (separation plate) that separates the inside of the vacuum process chamber and the outside of the atmosphere where the pressure is higher than the vacuum process chamber. Generation of high-density plasma due to a strong electric field is suppressed, and uniform plasma can be generated even at low pressure. Note that in this specification, the UHF band refers to a frequency region of 300 MHz to 1 GHz.

  In addition, by making the distance between the shower plate for supplying the gas and the sample stage less than 100 mm, there is an effect that the difference in CD gain between the dense pattern and the sparse pattern is reduced. Furthermore, the difference in CD gain can be further reduced by setting the shower plate diameter to 3/4 or less of the wafer diameter.

(2) Moreover, it is achieved by performing plasma treatment using a UHF band frequency under conditions of a low pressure of 0.1 Pa to 0.5 Pa and a low ion current density of 0.6 mA / cm ^{2 to 2} mA / cm ^2. . By setting the pressure to 0.1 Pa or more and the ion current density to 0.6 mA / cm ² or more, a practical etching rate can be maintained. On the other hand, the ion current density must be ² mA / cm ² or less in order to reduce charge-up, and the pressure must be 0.5 Pa or less in order to achieve anisotropic etching.

Here, FIG. 5 shows discharge characteristics when the frequency applied to the MSA is changed under the condition of 0.5 Pa. When the frequency is 1 GHz or more, there is a problem of unstable discharge at a low pressure of 0.5 Pa or less, so a low density region of ² mA / cm ² or less cannot be realized. In addition, at a frequency of 300 MHz or less, since the radiation efficiency of electromagnetic waves is poor, plasma discharge cannot be maintained in this structure in which plasma is not generated by a near-field electric field. In other words, it can be seen that plasma with a low ion current density of ² mA / cm ² or less can be efficiently generated at a low pressure of 0.5 Pa only in the region of 300 MHz to 1 GHz.

  (3) Furthermore, it is achieved by forming a magnetic field distribution that forms a convex ECR plane as viewed from the antenna and performing plasma treatment. In particular, it is effective when the intersection of the ECR surface and the shower plate is inside the antenna diameter. By doing so, ECR resonance occurs in the central portion, the plasma density in the central portion increases, and a uniform distribution can be formed.

  Specifically, a small-diameter coil is installed above the antenna. The inner diameter of the small diameter coil is made smaller than the antenna diameter.

  Further, when the plasma discharge is ignited, it may be controlled so as to be a concave ECR surface as viewed from the antenna and to be a convex ECR surface after ignition. This is because the ignitability of the plasma discharge is bad for the convex ECR surface and good for the concave ECR surface. In particular, when the intersection between the ECR surface and the shower plate is outside the antenna diameter, the ignitability is improved. Such control of the concavo-convex surface of the ECR surface can be performed by controlling the magnetic field coil on the outer periphery of the sample stage.

  (4) Furthermore, this is achieved by providing a cavity portion having a height of 30 mm or more on the back surface of the antenna, particularly when the plasma density has an outer height distribution. By doing so, it is possible to alleviate the concentration of the electric field at the outer periphery and to eliminate the outer height distribution of the plasma density. Then, the in-plane distribution of the ion current density is made uniform, and the in-plane uniformity of the etching rate can be achieved.

  (5) The plasma density change during etching is monitored. When the plasma density increases, the curvature of the convex ECR is increased as seen from the antenna, and conversely, when the plasma density decreases, the change is observed from the antenna. This can also be achieved by applying feedback to the magnetic field coil so as to reduce the curvature of the convex ECR. In particular, when the plasma density is increased, the outer peripheral high plasma distribution is obtained, and when the plasma density is decreased, the central high plasma distribution is obtained. When etching a multilayer film, the reaction product released into the plasma changes with the type of film to be etched, and the plasma density changes. Is.

By adopting the configuration of the present invention, a uniform and low ion current density plasma of 1 mA / cm ² or less can be realized even at a low pressure of 0.5 Pa or less capable of anisotropic processing, so that uniform etching without gate breakdown is possible. It is.

(Example 1)
FIG. 1 shows an example of the dry etching apparatus of the present invention.

  In this apparatus, reactive gas plasma is formed in the vacuum processing chamber by electron cyclotron resonance between the electromagnetic wave radiated from the MSA 4 and the magnetic field formed by the solenoid coils 5 and 6. The sample 8 is processed by irradiating the sample 8 held on the sample stage 7 with this plasma. The reactive gas can be supplied uniformly from the shower plate 9 provided on the surface facing the sample. Further, by installing the MSA 4 on the atmosphere side of the dielectric 10 that separates the inside and outside of the vacuum processing chamber, the generation of high-density plasma at the end of the disk-shaped electrode 3 due to the near field is suppressed. In addition, it is possible to prevent changes in characteristics due to corrosion of the disk-shaped electrode 3 and contamination of the sample due to corrosion reaction products of the disk-shaped electrode 3. In this example, a quartz disk having a thickness of 35 mm was used as the dielectric 10.

  Further, in the present apparatus, by using a UHF band high frequency as the high frequency applied to the disc-shaped electrode 3, a stable plasma can be formed even with a low pressure and low density plasma. In addition, the following two measures are taken so that an axial target plasma optimal for uniform plasma formation can be formed. The first point is that the MSA 4 sets the frequency of the UHF wave applied to the disk-shaped electrode 3, the diameter of the disk-shaped electrode 3, the material and thickness of the dielectric disk 2 so that the axially symmetric TM01 mode as shown in FIG. Yes. In the present embodiment, alumina having a UHF wave frequency of 450 MHz, a disk-shaped electrode 3 having a diameter of 255 mm, and a dielectric 2 having a thickness of 20 mm was used. The second point is a structure in which the feeding portion 11 is formed in a conical shape so that a high frequency can be fed to the disc-shaped electrode 3 with respect to the axis, and the antenna is fed from the apex of the cone. Further, in this apparatus, a quartz inner cylinder 12 is inserted as a countermeasure against metal contamination. When such a dielectric inner cylinder 12 is inserted, there is a problem that if the inner cylinder is slightly decentered and installed, the plasma is displaced from the axis target. In order to solve this problem, the conductor cylinder 13 grounded to the earth potential is provided, and the length of the overlapping portion of the inner cylinder 12 and the conductor cylinder 13 defined as the ground folding height in FIG. It turned out that it can prevent completely by doing above.

  The results of evaluating the discharge characteristics of chlorine gas plasma using this apparatus are shown in FIG. For comparison, the discharge characteristics of a conventional magnetic field microwave plasma generator are also shown in FIG. As shown in FIG. 4, in the conventional magnetic field microwave plasma, the discharge became unstable as the pressure was lower and the ion current density was lower. However, by applying a UHF band frequency to the MSA as in the present invention, a stable and uniform discharge can be achieved even in a low-voltage low-ion current region that could not be realized by a conventional magnetic field microwave plasma generator. It became so.

  In the antenna structure of Example 1, since the electric field strength at the center is strong as shown in FIG. 6, the plasma density at the center becomes high when there is no magnetic field or when the magnetic field is very weak. Therefore, in order to obtain a more uniform plasma, it is necessary to increase the plasma density on the outer periphery or reduce the plasma density at the center. A method for adjusting the ECR magnetic field for increasing the plasma density at the outer periphery will be described in Example 2, and a method for reducing the plasma density at the center will be described in Example 3.

(Example 2)
In the present embodiment, as described above, an ECR magnetic field forming method for increasing the plasma density on the outer periphery will be described.

  FIG. 7 shows the direction of the electric field in the case of the antenna structure of the first embodiment. In this structure, an electric field is generated horizontally at the outer periphery and vertically at the center. For this reason, as shown in FIG. 8, when there is a longitudinal magnetic field having a level magnitude that causes electron cyclotron resonance, strong resonance occurs in the outer periphery where the electric field and the magnetic field are orthogonal to each other, so that the plasma density in the outer periphery can be increased. . In order to generate such a magnetic field, like the solenoid coil 6 in FIG. 8, the upper end surface is higher than the disc-shaped conductor 3, the lower end surface is lower than the lower end of the shower plate, and covers the outer periphery of the shower plate from the antenna. It is necessary to mount a solenoid coil. By adjusting the magnitude of the current of the solenoid coil 6 and increasing / decreasing the magnitude of the vertical magnetic field, the distribution of the ion current density can be adjusted.

  For example, when the region where the magnetic field strength is weak and the electron sacrotron resonance (hereinafter abbreviated as ECR plane) is outside the vacuum processing chamber as in Condition 1, the ion current density distribution is high at the center as shown in FIG. When the magnetic field strength is strong and the ECR surface completely enters the inside of the vacuum processing chamber as shown in FIG. In particular, when the magnetic field strength is strong at the outer periphery and the ECR surface is only on the outer periphery (condition 2), highly uniform plasma can be realized as shown in FIG.

(Example 3)
In this embodiment, as described above, a method for reducing the central plasma density will be described.

  When the divergent magnetic field as shown in FIG. 10 is used, the plasma diffuses in the outer peripheral direction along the magnetic field, so that the center plasma density can be reduced. It has been found that such a divergent magnetic field can be realized by installing a solenoid coil 14 having a small inner diameter on the upper part of the MSA 4.

  FIG. 11 shows the relationship between the inner diameter of the solenoid coil 14 and the uniformity. When the inner diameter of the solenoid coil is larger than the antenna diameter, even if the coil current is increased, the in-wafer distribution of the ion current density takes a positive value indicating a medium height. Since the inner diameter becomes smaller than the antenna diameter of 255 mm, the uniformity changes depending on the coil current. As the current is increased, the distribution in the wafer surface is uniform due to the positive uniformity showing a medium-high distribution. It can be seen that it is possible to adjust the uniformity to 0%, which indicates that it is, and to the negative uniformity, which indicates the outer height distribution. From this, it was found that it is suitable to install the solenoid coil 14 whose inner diameter is smaller than the antenna diameter in order to produce uniform plasma.

(Example 4)
In this example, the relationship between the convex shape of the ECR surface and the ion current density is shown.

  Using the solenoid coils of Examples 2 and 3, the in-plane distribution of ion current density was made uniform. Adjusting the current of the two solenoid coils, as shown in FIG. 12, the ECR surface is a flat magnetic field (Condition 1), the magnetic field is adjusted to be convex downward (Condition 2), the curvature is increased, and the outer periphery FIG. 13 shows the in-plane distribution of the ion current density when the ECR surface is a magnetic field (condition 3) out of the vacuum processing chamber. Even under conditions where the curvature of the ECR surface is large, if the ECR surface of the outer peripheral portion is not outside the vacuum processing chamber, only the distribution of the outer peripheral height can be obtained. It was found that a uniform to medium-high distribution can be obtained only under the condition that the outer periphery of the ECR surface is outside the vacuum processing chamber.

  Next, the in-plane distribution of the ion current density was measured with the ECR surface convex upward. Also in this apparatus configuration, it was confirmed that the in-plane distribution of the ion current density is uniform only under the condition that the center part of the ECR surface comes out of the vacuum processing chamber as in the case of Example 2.

(Example 5)
In this example, a method of increasing the in-plane uniformity by reducing the outer high ion current density distribution is shown.

  There are the following methods as a method for making the ion current density uniform even in the upward convex magnetic field of the condition 3 of the second embodiment. As shown in FIG. 14, by providing the disk-shaped electrode 1 with a cavity 15 on the ring, the electric field strength on the outer periphery of the disk-shaped electrode 3 is reduced, and the ion current density on the outer periphery is reduced. The in-plane distribution of the ion current density on the sample 8 at this time is shown in FIG. It was found that by setting the cavity size to 30 mm or more, the plasma density on the outer periphery decreased and the outer height distribution was relaxed. At this time, it was also found that the plasma density itself increased.

(Example 6)
In this embodiment, the relationship between the ignition of plasma discharge and the ECR plane of plasma processing will be described.

When the downward convex ECR magnetic field of Example 3 is used, there is a problem that the ignitability of plasma is poor.
In order to solve this problem, the plasma is ignited in such a state that the ECR surface is convex upward, that is, a concave ECR surface as viewed from the antenna, and then the in-plane distribution of ion current density is A method for adjusting the magnetic field distribution to be uniform was studied.

  In order to increase the upward convex curvature of the ECR surface, a solenoid coil having an inner diameter larger than the processing chamber diameter is provided below the antenna surface as in the solenoid coil 16 of FIG. 16, and a high current is supplied to the solenoid coil. Is done. Using such a coil, an upward convex ECR magnetic field is created, a 1200 W UHF power is applied for 1 second to ignite the plasma, and then a downward convex ECR magnetic field, that is, a convex ECR surface as seen from the antenna. A uniform plasma was generated by switching to such a magnetic field distribution. Thereby, it was confirmed that good ignitability and stable uniform discharge are sustained.

  The plasma homogenization and plasma ignitability improvement by magnetic field control in Examples 2 to 6 are not only performed on the wiring material such as gate metal, but also on the insulating film material such as oxide film and low dielectric constant film. Also effective.

(Example 7)
FIG. 17 shows the relationship between the ion current density and the curvature of the downward convex ECR magnetic field measured with the apparatus of Example 3 and the uniformity of the in-plane distribution of the ion current density. When the curvature of the downward convex ECR magnetic field is the same and the ion current density is increased by increasing the UHF power, the uniformity of the in-plane distribution of the ion current density changes from positive representing a medium height to negative representing a peripheral height. .

  From this, assuming that the sample of the multilayer film structure is etched, the material to be etched changes during the etching, so that the type of the etching reaction product released into the plasma changes, so that the ion current density changes, It is expected that the in-plane uniformity of the ion current density will decrease. Therefore, in order to maintain a uniform in-plane distribution of the ionic current density even during the etching of the multilayer structure sample, it is necessary to change the curvature of the downward convex ECR magnetic field with the change of the ionic current density.

  To cope with this, as shown in FIG. 18, the ion current density is calculated from the relationship between the bias power applied to the sample and the peak-to-peak voltage (difference between the minimum value and the maximum value of the bias voltage), and the result is used. We have developed a system that calculates the optimum value of the curvature of the downward convex ECR magnetic field and feeds it back to the solenoid coil current. By etching using this system, the ion current density in-plane distribution can be kept uniform even during etching of a sample having a multilayer structure.

(Example 8)
In this embodiment, an example in which multilayer wiring is etched is shown. Using the apparatus of Example 7, the metal wiring having a multilayer structure was etched. As a sample to be etched, as shown in FIG. 19, titanium nitride (TiN) 18 and aluminum / copper / silicon mixed crystal (Al—Cu—Si) 19 are formed on silicon oxide 15 deposited on the gate wiring by CVD. Then, a structure in which titanium nitride (TiN) 20 is deposited in this order and a resist mask 21 is formed thereon is used. This sample is a UHF with a low ion current density of 1 mA / cm ^{2 at} a low pressure of 0.5 Pa using a plasma of a mixed gas of Cl ₂ , BCl ₃ and CH ₄ 4% Ar dilution gas (hereinafter abbreviated as NR). Under the condition of power of 800 W, the sample was etched by applying a 40 W 800 kHz RF bias. After etching, the resist is removed by ashing with a mixed gas plasma of CF ₄ and O ₂ , and the shape after wet processing with NMD-3 is shown in FIG.

  The relationship between the CD gain of the sparse pattern shown in FIG. 20 and the distance between the sample and the shower plate was measured. The result is shown in FIG. Note that the CD gain means an etching pattern dimension thickening amount (thinning amount) as shown in FIG.

  In the etching conditions of the conventional apparatus where the distance between the shower plate and the sample stage is 100 mm or more, there was a problem that the CD gain of the central pattern was larger than the surrounding pattern, but there was a problem between the shower plate and the sample stage. It can be seen that by making the distance less than 100 mm, the CD gain of the center pattern is reduced, and the difference between the CD gain of the peripheral pattern and the center pattern is reduced. In addition, the shower plate diameter shown in FIG. 1 is also an important factor for this effect. When the shower plate diameter is 170 mm, there is no effect, and the shower plate diameter is less than 150 mm, which is 3/4 of the wafer diameter. It turns out that the effect of CD gain reduction appears. It was found that when the shower plate diameter is 100 mm, the distance between the sample and the shower plate can be shortened to 60 mm and processing without in-plane difference in CD gain can be performed.

FIG. 22 shows the result of measuring the gate breakdown of the etched sample under the conditions of a shower plate diameter of 100 mm and a sample-shower plate distance of 60 mm. There is no black part showing the IC chip that has undergone gate destruction. In other words, it has been found that by using a low ion current density of 1 mA / cm ² or less, etching without gate breakdown can be realized even at a low pressure of 0.5 Pa or less capable of anisotropic processing.

  Although metal etching has been described here, the effect of the distance between the sample and the shower plate and the effect of etching at a low voltage and low ion current in the present embodiment are the same in the gate etching.

  Note that the above-described dense pattern refers to a wiring pattern of a memory mat portion in a DRAM, for example, and a sparse pattern refers to a wiring pattern of a peripheral circuit portion.

Example 9
FIG. 23 shows the flow of the CMOS gate processing step. First, i-Poly is deposited on a silicon oxide film by a CVD method. A photoresist is applied on this i-Poly and patterned by a lithography technique to form a resist pattern. After performing P ⁺ ion implantation using this resist pattern as a mask, the resist is removed and annealed to form adjacent i-Poly layers n ⁺ Poly-Si layers. Si ₃ N ₄ is deposited by CVD on this i-Poly / n ⁺ Poly-Si layer. Next, a photoresist is applied and patterned by a lithography technique to form a resist pattern. Using this resist pattern as a mask, the Si ₃ N ₄ layer is anisotropically etched by CHF ₃ / O ₂ / Ar mixed gas plasma. Further, the resist is removed by ashing to form a Si ₃ N ₄ mask. The i-Poly / n ⁺ Poly-Si layer of this sample was anisotropically etched using the apparatus of Example 2 using Si ₃ N ₄ as a mask. Anisotropic etching uses a mixed gas of Cl ₂ , O ₂ , and HBr at a low pressure of 0.1 to 0.2 Pa and a low ion current density of 1 mA / cm ^{2 at} a UHF power of 800 W. This was done by applying a bias. Etching with this apparatus was able to perform etching without shape difference between i-Poly pattern and n ⁺ Poly-Si pattern. Next, a phosphorous doping process was performed using the remaining Si ₃ N ₄ / Poly-Si pattern as a mask to form a CMOS gate.

An example of the dry etching apparatus of this invention. Microstrip antenna (MSA) structure. Electric field on the disc-shaped electrode 3 of TM01 mode MSA. FIG. 2 is a discharge stability map of the apparatus of FIG. UHF frequency dependence of ion current density. FIG. 2 is a distribution of radiated electric field strength in the apparatus of FIG. Direction of the radiated electric field in the device of FIG. An example of magnetic field lines and ECR plane in the apparatus of FIG. Change in in-plane distribution of ion current density due to magnetic field. The example of a magnetic force line in the case of the divergent magnetic field in the apparatus provided with the solenoid coil 14. FIG. Relationship between solenoid coil inner diameter and uniformity of ion current density in-plane distribution. The example of the ECR surface in the apparatus of FIG. Change in in-plane distribution of ion current density due to magnetic field. The example of the dry etching apparatus which provided the cavity in the earth conductor. In-plane distribution of ion current density of the apparatus of FIG. An example of a device provided with a solenoid coil 16. Relation between curvature of downward convex magnetic field and uniformity of in-plane distribution of ion current density. An example of a hoodback circuit for maintaining a uniform ion current in-plane distribution during multilayer film etching. Cross-sectional structure of a metal wiring sample to be etched. Cross-sectional structure of metal wiring after etching, resist ashing removal, and wet processing. Relationship between sample-shower plate distance and sparse pattern CD gain. The state of gate breakdown in a metal wiring sample etched with the apparatus of the present invention. Flow of CMOS gate processing process.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Disc electrode, 2 ... Dielectric, 3 ... Disc electrode, 4 ... MSA, 5, 6 ... Solenoid coil, 7 ... Sample stand, 8 ... Sample, 9 ... Shower plate, 10 ... Dielectric, 11 ... Cone 12 ... quartz inner cylinder, 13 ... conductor cylinder, 14 ... solenoid coil, 15 ... cavity, 16 ... solenoid coil, 17 ... silicon oxide, 18 ... titanium nitride, 19 ... mixed crystal of aluminum, copper and silicon 20 ... titanium nitride, 21 ... resist mask.

Claims (5)

A processing chamber, a sample stage provided in the processing chamber for installing a workpiece, an exhaust means for exhausting gas in the processing chamber, a shower plate for introducing gas into the processing chamber, and a UHF band In a method for manufacturing a semiconductor device using an etching apparatus provided with an antenna to which high-frequency power is applied and means for forming a magnetic field in the processing chamber,
A convex ECR surface is formed in the sample chamber to ignite plasma,
A method of manufacturing a semiconductor device, wherein the workpiece is etched using the plasma. In the manufacturing method of the semiconductor device according to claim 1,
A diameter of a shower plate of the shower plate is 3/4 or less of a diameter of the workpiece, and the gas is introduced into the sample chamber from a region having a diameter of 3/4 or less. Production method. In the manufacturing method of the semiconductor device according to claim 1,
A method of manufacturing a semiconductor device, comprising adjusting a magnetic field distribution so that an in-plane distribution of ion current density is uniform after the plasma is ignited. In the manufacturing method of the semiconductor device according to claim 1,
A method of manufacturing a semiconductor device, comprising adjusting a magnetic field distribution so that a convex ECR surface is formed below after the plasma is ignited. 5. The method of manufacturing a semiconductor device according to claim 1, wherein a distance between the shower plate and the sample stage is less than 100 mm. 6.

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