JP2003272948A - Thick film capacitor - Google Patents
Thick film capacitorInfo
- Publication number
- JP2003272948A JP2003272948A JP2002075742A JP2002075742A JP2003272948A JP 2003272948 A JP2003272948 A JP 2003272948A JP 2002075742 A JP2002075742 A JP 2002075742A JP 2002075742 A JP2002075742 A JP 2002075742A JP 2003272948 A JP2003272948 A JP 2003272948A
- Authority
- JP
- Japan
- Prior art keywords
- thick film
- upper electrode
- dielectric
- resin
- film dielectric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、多孔質の厚膜誘電
体を構成要素の一つとする厚膜コンデンサに関するもの
である。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thick film capacitor having a porous thick film dielectric as one of its constituent elements.
【０００２】[0002]
【従来の技術】従来のこの種の厚膜コンデンサにおいて
は、耐湿性向上を図ったものとして、特開昭５３−４８
４４号公報に開示されたものが知られている。2. Description of the Related Art In a conventional thick film capacitor of this type, it is disclosed in Japanese Patent Laid-Open No. 53-48,53, which is intended to improve moisture resistance.
The one disclosed in Japanese Patent Publication No. 44-44 is known.
【０００３】図９は従来の厚膜コンデンサを示したもの
で、この図９にもとづいて厚膜コンデンサの製造方法を
説明する。FIG. 9 shows a conventional thick film capacitor, and a method of manufacturing the thick film capacitor will be described with reference to FIG.
【０００４】まず、図９に示したアルミナ基板１上にＡ
ｇ−Ｐｄペーストを厚さ１０μｍに印刷し、ピーク温度
９５０℃で焼成することにより下部電極２を形成する。
次に、この下部電極２の上にチタン酸バリウム系誘電体
を厚さ５０μｍに印刷し、その上に下部電極２と同一の
材質であるＡｇ−Ｐｄペーストを厚さ１０μｍに印刷
し、ピーク温度９５０℃で焼成することにより誘電体層
３と上部電極４を形成する。次に、前記誘電体層３の上
方に誘電体層３と上部電極４が覆われるように軟化温度
８５０℃の結晶質ガラスを厚さ１０μｍに印刷し、ピー
ク温度６５０℃で焼成することによりガラス被覆５を形
成する。次に、ガラス被覆５と前記誘電体層３が覆われ
るようにポリブタジエン系樹脂を厚さ５０μｍに印刷
し、ピーク温度２００℃で硬化させることにより樹脂被
覆６を形成して厚膜コンデンサを製造していた。First, on the alumina substrate 1 shown in FIG.
The lower electrode 2 is formed by printing g-Pd paste to a thickness of 10 μm and firing it at a peak temperature of 950 ° C.
Next, a barium titanate-based dielectric is printed on the lower electrode 2 to a thickness of 50 μm, and an Ag—Pd paste, which is the same material as the lower electrode 2, is printed on the lower electrode 2 to a thickness of 10 μm. By firing at 950 ° C., the dielectric layer 3 and the upper electrode 4 are formed. Then, a crystalline glass having a softening temperature of 850 ° C. is printed to a thickness of 10 μm so that the dielectric layer 3 and the upper electrode 4 are covered above the dielectric layer 3, and the glass is baked at a peak temperature of 650 ° C. The coating 5 is formed. Next, a polybutadiene resin is printed to a thickness of 50 μm so that the glass coating 5 and the dielectric layer 3 are covered, and the resin coating 6 is formed by curing at a peak temperature of 200 ° C. to manufacture a thick film capacitor. Was there.
【０００５】上記のようにして製造された従来の厚膜コ
ンデンサは、誘電体層３を多孔質のチタン酸バリウム系
誘電体で構成しているため、耐湿性が悪いもので、この
耐湿性を向上させるために、誘電体層３を予め多孔質の
結晶質ガラスで被覆し、その後、吸湿性の小さい樹脂で
被覆するようにしているもので、このような構成とする
ことにより、吸湿性の小さい樹脂が多孔質の結晶質ガラ
スを通り多孔質の誘電体中に含浸するため、耐湿性を向
上させることができるものである。In the conventional thick film capacitor manufactured as described above, since the dielectric layer 3 is composed of the porous barium titanate-based dielectric, the humidity resistance is poor, and the humidity resistance is poor. In order to improve the structure, the dielectric layer 3 is coated with porous crystalline glass in advance and then with a resin having a low hygroscopic property. Since a small resin passes through the porous crystalline glass and impregnates it into the porous dielectric, the moisture resistance can be improved.
【０００６】[0006]
【発明が解決しようとする課題】しかしながら、上記従
来の厚膜コンデンサのように、樹脂被覆６を形成する前
に、多孔質の結晶質ガラスからなるガラス被覆５で誘電
体層３と上部電極４を被覆しておいたとしても、誘電体
層３と比較して非常に緻密な膜である上部電極４の部分
には樹脂被覆６を構成する樹脂が浸透しにくいため、こ
の上部電極４の下に位置する誘電体層３の部分には樹脂
が含浸されず、その結果、この部分に空洞が発生するこ
とになり、そしてこの空洞内の気体は製造過程の加熱に
より樹脂被覆６を通過してこの樹脂被覆６に気孔を発生
させる場合があり、そしてこの気孔の部分から水分が浸
入したり、吸湿トラップにより耐湿性の劣化が発生する
場合があるという課題を有していた。However, like the conventional thick film capacitor described above, before forming the resin coating 6, the dielectric layer 3 and the upper electrode 4 are covered with the glass coating 5 made of porous crystalline glass. Even if the upper electrode 4 is covered, the resin forming the resin coating 6 does not easily penetrate into the upper electrode 4 which is a very dense film as compared with the dielectric layer 3. The portion of the dielectric layer 3 located at is not impregnated with resin, and as a result, a cavity is generated in this portion, and the gas in this cavity passes through the resin coating 6 due to the heating in the manufacturing process. There is a problem that pores may be generated in the resin coating 6, moisture may infiltrate through the pores, or moisture resistance may be deteriorated due to a moisture absorption trap.
【０００７】本発明は上記従来の課題を解決するもの
で、耐湿性を大幅に向上させることができる厚膜コンデ
ンサを提供することを目的とするものである。The present invention solves the above-mentioned conventional problems, and an object of the present invention is to provide a thick film capacitor capable of greatly improving moisture resistance.
【０００８】[0008]
【課題を解決するための手段】上記目的を達成するため
に、本発明は以下の構成を有するものである。In order to achieve the above object, the present invention has the following constitution.
【０００９】本発明の請求項１に記載の発明は、絶縁基
板と、この絶縁基板の上に形成された下部電極と、この
下部電極の上から前記絶縁基板上にかけて形成された厚
膜誘電体と、この厚膜誘電体の上から前記絶縁基板側に
向けて形成された上部電極と、少なくとも前記厚膜誘電
体を被覆するように形成された樹脂保護膜とを備え、前
記上部電極における少なくとも厚膜誘電体上に位置する
部分を多孔質構造にしたもので、この構成によれば、上
部電極における少なくとも厚膜誘電体上に位置する部分
を多孔質構造にしているため、この上部電極は厚膜誘電
体と同様に多孔質化されることになり、これにより、上
部電極にも樹脂保護膜を構成する吸湿性の小さい樹脂が
浸透しやすくなるため、この上部電極の下に位置する厚
膜誘電体の部分にも樹脂が確実に含浸されることにな
り、その結果、上部電極の下に位置する厚膜誘電体の部
分に空洞が発生するのも激減するため、従来のように空
洞内の気体によって樹脂保護膜に気孔が発生するという
ことは極めて少なくなり、その結果、この気孔の部分か
らの水分の浸入や吸湿トラップによる耐湿性の劣化を確
実に防止することができるという作用効果を有するもの
である。The invention according to claim 1 of the present invention is directed to an insulating substrate, a lower electrode formed on the insulating substrate, and a thick film dielectric formed on the lower electrode and on the insulating substrate. And an upper electrode formed from above the thick film dielectric toward the insulating substrate, and a resin protective film formed so as to cover at least the thick film dielectric. The portion located on the thick film dielectric has a porous structure. According to this configuration, at least the portion of the upper electrode located on the thick film dielectric has a porous structure. As with the thick-film dielectric, it becomes porous, and this allows the resin with a low hygroscopicity that composes the resin protective film to easily penetrate into the upper electrode. In the part of the film dielectric The resin is surely impregnated, and as a result, the occurrence of cavities in the thick film dielectric portion under the upper electrode is drastically reduced. The occurrence of pores in the pores is extremely reduced, and as a result, it is possible to reliably prevent the infiltration of water from the pores and the deterioration of the moisture resistance due to the moisture absorption trap.
【００１０】本発明の請求項２に記載の発明は、特に、
上部電極における多孔質構造部を、厚膜導電材料に厚膜
導電体と同一材質の誘電体材料を９０対１０〜６０対４
０の配合比により配合したもので構成したもので、この
構成によれば、上記電極が厚膜誘電体と類似した材料で
構成されるため、従来と遜色のない容量値、減衰特性等
の誘電体特性および負荷寿命信頼性を確保することがで
き、しかも上部電極を厚膜誘電体と同様に多孔質化させ
ることができるため、耐湿性の劣化の防止も確実に行え
るという作用効果を有するものである。The invention according to claim 2 of the present invention is
For the porous structure portion of the upper electrode, the thick film conductive material is made of the same dielectric material as the thick film conductive material, 90:10 to 60: 4.
With this composition, the electrode is composed of a material similar to that of the thick film dielectric, so that the capacitance and attenuation characteristics are comparable to those of the conventional ones. Since it is possible to secure the body characteristics and load life reliability, and moreover, since the upper electrode can be made porous like the thick film dielectric, it is possible to reliably prevent the deterioration of moisture resistance. Is.
【００１１】本発明の請求項３に記載の発明は、特に、
上部電極における多孔質構造部を、厚膜導電材料に無機
フィラーを配合したもので構成したもので、この構成に
よれば、上部電極が無機フィラーを配合したことにより
多孔質化されるため、この上部電極にも樹脂保護膜を構
成する吸湿性の小さい樹脂が浸透しやすくなり、そして
この上部電極の下に位置する厚膜誘電体の部分にも樹脂
が確実に含浸されることになり、これにより、厚膜誘電
体全体の樹脂含浸も均一なものが得られるため、厚膜誘
電体に空洞が発生するのも激減することになり、その結
果、従来のように空洞内の気体によって樹脂保護膜に気
孔が発生するということは極めて少なくなるため、この
気孔の部分からの水分の浸入や吸湿トラップによる耐湿
性の劣化を確実に防止することができるという作用効果
を有するものである。The invention according to claim 3 of the present invention is
The porous structure portion of the upper electrode is composed of a thick film conductive material mixed with an inorganic filler, and according to this structure, the upper electrode is made porous by mixing the inorganic filler. The resin having a low hygroscopic property that constitutes the resin protective film also easily penetrates into the upper electrode, and the portion of the thick film dielectric located under the upper electrode is surely impregnated with the resin. As a result, uniform resin impregnation of the thick film dielectric can be obtained, and the occurrence of cavities in the thick film dielectric is drastically reduced. As a result, the resin in the cavity is protected by the gas as in the past. Since the occurrence of pores in the membrane is extremely small, it has an effect that it is possible to reliably prevent the infiltration of water from the pores and the deterioration of the moisture resistance due to the moisture absorption trap. .
【００１２】[0012]
【発明の実施の形態】以下、本発明の一実施の形態につ
いて、図面を参照しながら説明する。BEST MODE FOR CARRYING OUT THE INVENTION An embodiment of the present invention will be described below with reference to the drawings.
【００１３】図１は本発明の一実施の形態における厚膜
コンデンサの断面図である。FIG. 1 is a sectional view of a thick film capacitor according to an embodiment of the present invention.
【００１４】図１において、１１は９６％アルミナ基板
等からなる絶縁基板、１２，１３は前記絶縁基板１１の
上に形成された一対の下部電極で、この一対の下部電極
１２，１３はＡｇ，Ｐｄおよびこれらの合金からなる厚
膜導電材料により構成されている。１４は前記一対の下
部電極１２，１３のうち、一方の下部電極１２の上から
絶縁基板１１の上にかけて形成された厚膜誘電体で、こ
の厚膜誘電体１４はチタン酸バリウム系、チタン酸鉛系
の強誘電材料により構成されている。１５は前記厚膜誘
電体１４の上から前記一対の下部電極１２，１３のう
ち、他方の下部電極１３の上にかけて形成された上部電
極で、この上部電極１５は、Ａｇ，Ｐｄおよびこれらの
合金からなる厚膜導電材料に厚膜誘電体１４を構成する
チタン酸バリウム系、チタン酸鉛系の強誘電材料を７０
対３０の配合比により配合したもので構成することによ
り多孔質構造にしている。１６は前記厚膜誘電体１４、
上部電極１５および他方の下部電極１３の一部を被覆す
るように形成された樹脂保護膜で、この樹脂保護膜１６
はフェノール樹脂等の樹脂材料により構成されている。In FIG. 1, 11 is an insulating substrate made of a 96% alumina substrate or the like, 12 and 13 are a pair of lower electrodes formed on the insulating substrate 11, and the pair of lower electrodes 12 and 13 are Ag, It is composed of a thick film conductive material composed of Pd and these alloys. Reference numeral 14 denotes a thick film dielectric formed on the insulating substrate 11 from one lower electrode 12 of the pair of lower electrodes 12 and 13. The thick film dielectric 14 is made of barium titanate or titanate. It is composed of a lead-based ferroelectric material. Reference numeral 15 is an upper electrode formed on the thick film dielectric 14 and on the other lower electrode 13 of the pair of lower electrodes 12, 13, and the upper electrode 15 is made of Ag, Pd and alloys thereof. A thick film conductive material composed of a barium titanate-based or lead titanate-based ferroelectric material constituting the thick film dielectric 14
A porous structure is obtained by composing the composition with the composition ratio of 30 to 30. 16 is the thick film dielectric 14,
This resin protective film 16 is a resin protective film formed so as to cover part of the upper electrode 15 and the other lower electrode 13.
Is made of a resin material such as phenol resin.
【００１５】以上のように構成された本発明の一実施の
形態における厚膜コンデンサについて、次にその製造方
法を説明する。A method of manufacturing the thick film capacitor having the above-described structure according to the embodiment of the present invention will be described below.
【００１６】図２（ａ）〜（ｄ）は本発明の一実施の形
態における厚膜コンデンサの製造方法を示す製造工程図
である。2 (a) to 2 (d) are manufacturing process diagrams showing a method of manufacturing a thick film capacitor according to an embodiment of the present invention.
【００１７】まず、図２（ａ）に示すように、９６％ア
ルミナ基板等からなる絶縁基板１１の上にＡｇ，Ｐｄお
よびこれらの合金からなる厚膜導電ペーストを印刷し、
かつ８５０℃〜９００℃で焼成することにより一対の下
部電極１２，１３を形成する。First, as shown in FIG. 2A, a thick film conductive paste made of Ag, Pd and an alloy thereof is printed on an insulating substrate 11 made of a 96% alumina substrate or the like,
And a pair of lower electrodes 12 and 13 are formed by baking at 850 degreeC-900 degreeC.
【００１８】次に、図２（ｂ）に示すように、前記一対
の下部電極１２，１３のうち、一方の下部電極１２の上
から前記絶縁基板１１の上にかけて、チタン酸バリウム
系の強誘電材料、チタン酸鉛系の強誘電材料からなる厚
膜誘電体ペーストを印刷し、かつ８５０℃〜９００℃で
焼成することにより厚膜誘電体１４を形成する。Next, as shown in FIG. 2B, of the pair of lower electrodes 12 and 13, the barium titanate-based ferroelectric material is applied from above one of the lower electrodes 12 to above the insulating substrate 11. The thick film dielectric 14 is formed by printing a thick film dielectric paste made of a lead titanate-based ferroelectric material and firing at 850 ° C. to 900 ° C.
【００１９】次に、図２（ｃ）に示すように、厚膜誘電
体１４の上から前記一対の下部電極１２，１３のうち、
他方の下部電極１３の上にかけて、Ａｇ，Ｐｄおよびこ
れらの合金からなる厚膜導電ペーストに厚膜誘電体１４
を構成するチタン酸バリウム系、チタン酸鉛系の強誘電
材料を７０対３０の配合比により配合したペーストを印
刷し、かつ８５０℃〜９００℃で焼成することにより多
孔質構造の上部電極１５を形成する。Next, as shown in FIG. 2C, of the pair of lower electrodes 12 and 13 from above the thick film dielectric 14,
A thick-film dielectric 14 made of Ag, Pd, and an alloy thereof is formed on the other lower electrode 13.
By printing a paste prepared by mixing the barium titanate-based and lead titanate-based ferroelectric materials in a composition ratio of 70:30 and firing at 850 ° C. to 900 ° C. to form the upper electrode 15 having a porous structure. Form.
【００２０】最後に、図２（ｄ）に示すように、前記厚
膜誘電体１４、上部電極１５および他方の下部電極１３
の一部を被覆するようにフェノール樹脂等の樹脂材料か
らなる厚膜樹脂ペーストを印刷し、かつ１５０℃〜２３
０℃で硬化させることにより樹脂保護膜１６を形成して
厚膜コンデンサを製造する。Finally, as shown in FIG. 2D, the thick film dielectric 14, the upper electrode 15 and the other lower electrode 13 are formed.
Is printed with a thick film resin paste made of a resin material such as phenol resin so as to cover a part of
The resin protective film 16 is formed by curing at 0 ° C. to manufacture a thick film capacitor.
【００２１】図３は従来の上部電極を構成するＡｇとＰ
ｄの配合比を変化させた時の抵抗値と、本発明の一実施
の形態における多孔質構造の上部電極１５を構成するＡ
ｇ，Ｐｄおよびこれらの合金からなる厚膜導電ペースト
と強誘電材料の配合比を変化させた時の抵抗値を示す特
性図である。FIG. 3 shows Ag and P constituting the conventional upper electrode.
The resistance value when the compounding ratio of d is changed and A constituting the upper electrode 15 having the porous structure in the embodiment of the present invention.
It is a characteristic view which shows the resistance value when changing the compounding ratio of the thick film conductive paste which consists of g, Pd, and these alloys, and a ferroelectric material.
【００２２】図４は従来の上部電極を構成するＡｇとＰ
ｄの配合比を変化させた時の容量値と、本発明の一実施
の形態における多孔質構造の上部電極１５を構成するＡ
ｇ，Ｐｄおよびこれらの合金からなる厚膜導電ペースト
と強誘電材料の配合比を変化させた時の容量値を示す特
性図である。FIG. 4 shows Ag and P constituting the conventional upper electrode.
The capacitance value when the compounding ratio of d is changed and A constituting the upper electrode 15 having a porous structure in the embodiment of the present invention.
It is a characteristic view which shows the capacitance value when changing the compounding ratio of the thick film conductive paste which consists of g, Pd, and these alloys, and a ferroelectric material.
【００２３】（表１）は従来の上部電極を構成するＡｇ
とＰｄの配合比をそれぞれ変化させたものと、本発明の
一実施の形態における多孔質構造の上部電極１５を構成
するＡｇ，Ｐｄおよびこれらの合金からなる厚膜導電ペ
ーストと強誘電材料の配合比をそれぞれ変化させたもの
を２５０時間および５００時間湿中放置（６０℃、９５
％ＲＨ）した後の絶縁抵抗値不良（ＩＥ＋０９以下）の
数を調査した結果を示したものである。Table 1 shows Ag which constitutes the conventional upper electrode.
And Pd with different composition ratios, and a thick film conductive paste composed of Ag and Pd and their alloys forming the upper electrode 15 having a porous structure in one embodiment of the present invention, and a mixture of a ferroelectric material. The ones with different ratios were left for 250 hours and 500 hours in the humidity (60 ° C, 95%).
% RH), and shows the result of examining the number of defective insulation resistance values (IE + 09 or less).
【００２４】[0024]
【表１】 [Table 1]
【００２５】図３、図４、（表１）の耐湿試験評価結果
からも明らかなように、本発明の一実施の形態における
多孔質構造の上部電極１５を構成するＡｇ，Ｐｄおよび
これらの合金からなる厚膜導電ペーストと強誘電材料の
配合比は、Ｐｄを含まないＡｇからなる厚膜導電ペース
トと強誘電材料の配合比が９０対１０〜６０対４０の
時、最も良好な結果が得られるものである。As is clear from the moisture resistance test evaluation results of FIGS. 3 and 4, (Table 1), Ag, Pd and their alloys which constitute the upper electrode 15 of the porous structure in the embodiment of the present invention. As for the compounding ratio of the thick film conductive paste made of Pd and the ferroelectric material, the best result was obtained when the mixing ratio of the thick film conductive paste made of Ag not containing Pd and the ferroelectric material was 90:10 to 60:40. It is what is done.
【００２６】図５は従来の上部電極を構成するＡｇとＰ
ｄの配合比においてＰｄを１０％配合したものと、本発
明の一実施の形態における多孔質構造の上部電極１５を
構成するＡｇ，Ｐｄおよびこれらの合金からなる厚膜導
電ペーストと強誘電材料の配合比においてＰｄを含まな
いＡｇからなる厚膜導電ペーストと強誘電材料の配合比
を９０対１０および６０対４０にしたものの減衰特性図
を示したものである。FIG. 5 shows Ag and P constituting the conventional upper electrode.
In the compounding ratio of d, 10% of Pd is mixed, and Ag, Pd which form the upper electrode 15 of the porous structure in one embodiment of the present invention and the thick film conductive paste made of these alloys and the ferroelectric material. FIG. 9 is a diagram showing attenuation characteristics of a thick film conductive paste made of Ag containing no Pd and a ferroelectric material at a mixing ratio of 90:10 and 60:40.
【００２７】図６（ａ）（ｂ）（ｃ）は従来の上部電極
を構成するＡｇとＰｄの配合比においてＰｄを１０％配
合したものを６０℃、９５％ＲＨ雰囲気中において電圧
２５Ｖの連続印加を１０００時間繰り返した時の絶縁抵
抗値、容量値変化率、ｔａｎδを示す特性図である。6 (a), (b) and (c) show a conventional upper electrode having a composition ratio of Ag and Pd of 10% of Pd mixed at 60 ° C. and 95% RH in a voltage of 25 V continuously. FIG. 9 is a characteristic diagram showing an insulation resistance value, a capacitance value change rate, and tan δ when application is repeated for 1000 hours.
【００２８】図７（ａ）（ｂ）（ｃ）は本発明の一実施
の形態における多孔質構造の上部電極１５を構成するＡ
ｇ，Ｐｄおよびこれらの合金からなる厚膜導電ペースト
と強誘電材料の配合比においてＰｄを含まないＡｇから
なる厚膜導電ペーストと強誘電材料の配合比を９０対１
０にしたものを６０℃、９５％ＲＨ雰囲気中において電
圧２５Ｖの連続印加を１０００時間繰り返した時の絶縁
抵抗値、容量値変化率、ｔａｎδを示す特性図である。7 (a), (b) and (c) show A constituting the upper electrode 15 having a porous structure in the embodiment of the present invention.
In the compounding ratio of the thick film conductive paste made of g, Pd and their alloys and the ferroelectric material, the compounding ratio of the thick film conductive paste made of Ag not containing Pd and the ferroelectric material is 90: 1.
FIG. 6 is a characteristic diagram showing an insulation resistance value, a capacitance value change rate, and tan δ when a value of 0 was repeatedly applied for 1000 hours at a voltage of 25 V in an atmosphere of 60 ° C. and 95% RH.
【００２９】図８（ａ）（ｂ）（ｃ）は本発明の一実施
の形態における多孔質構造の上部電極１５を構成するＡ
ｇ，Ｐｄおよびこれらの合金からなる厚膜導電ペースト
と強誘電材料の配合比においてＰｄを含まないＡｇから
なる厚膜導電ペーストと強誘電材料の配合比を６０対４
０にしたものを６０℃、９５％ＲＨ雰囲気中において電
圧２５Ｖの連続印加を１０００時間繰り返した時の絶縁
抵抗値、容量値変化率、ｔａｎδを示す特性図である。FIGS. 8A, 8B and 8C are views showing the structure A of the porous upper electrode 15 according to the embodiment of the present invention.
In the mixing ratio of the thick film conductive paste made of g, Pd and their alloys and the ferroelectric material, the mixing ratio of the thick film conductive paste made of Ag not containing Pd and the ferroelectric material is 60: 4.
FIG. 6 is a characteristic diagram showing an insulation resistance value, a capacitance value change rate, and tan δ when a value of 0 is repeatedly applied for 1000 hours at a voltage of 25 V in an atmosphere of 60 ° C. and 95% RH.
【００３０】図５の減衰特性図、図６（ａ）（ｂ）
（ｃ）、図７（ａ）（ｂ）（ｃ）、図８（ａ）（ｂ）
（ｃ）の耐湿負荷寿命試験評価結果からも明らかなよう
に、本発明の一実施の形態における多孔質構造の上部電
極１５を構成するＡｇ，Ｐｄおよびこれらの合金からな
る厚膜導電ペーストと強誘電材料の配合比は、Ｐｄを含
まないＡｇからなる厚膜導電ペーストと強誘電材料の配
合比が９０対１０〜６０対４０の時、従来と遜色のない
誘電体特性、負荷寿命信頼性を確保することができるも
のである。Attenuation characteristic diagram of FIG. 5, FIGS. 6 (a) and 6 (b)
(C), FIG. 7 (a) (b) (c), FIG. 8 (a) (b)
As is clear from the evaluation result of the moisture resistance load life test of (c), a thick film conductive paste made of Ag, Pd, and an alloy thereof forming the upper electrode 15 having a porous structure according to the embodiment of the present invention and a strong conductive paste. As for the mixing ratio of the dielectric material, when the mixing ratio of the thick film conductive paste made of Ag not containing Pd and the ferroelectric material is 90:10 to 60:40, the dielectric characteristics and load life reliability are comparable to those of the conventional one. It can be secured.
【００３１】上記した本発明の一実施の形態において
は、絶縁基板１１と、この絶縁基板１１の上に形成され
た一対の下部電極１２，１３と、この一対の下部電極１
２，１３のうち、一方の下部電極１２の上から前記絶縁
基板１１の上にかけて形成された厚膜誘電体１４と、こ
の厚膜誘電体１４の上から前記一対の下部電極１２，１
３のうち、他方の下部電極１３の上にかけて形成された
上部電極１５と、前記厚膜誘電体１４、上部電極１５お
よび他方の下部電極１３の一部を被覆するように形成さ
れた樹脂保護膜１６とを備え、前記上部電極１５におけ
る少なくとも厚膜誘電体１４上に位置する部分を、Ａ
ｇ，Ｐｄおよびこれらの合金からなる厚膜導電材料に厚
膜誘電体１４を構成するチタン酸バリウム系、チタン酸
鉛系の強誘電材料を配合したもので構成することにより
多孔質構造にしているため、この上部電極１５は厚膜誘
電体１４と同様に多孔質化されることになり、これによ
り、上部電極１５にも樹脂保護膜１６を構成する吸湿性
の小さい樹脂が浸透しやすくなるため、この上部電極１
５の下に位置する厚膜誘電体１４の部分にも樹脂が確実
に含浸されることになり、その結果、上部電極１５の下
に位置する厚膜誘電体１４の部分に空洞が発生するのも
激減するため、従来のように空洞内の気体によって樹脂
保護膜１６に気孔が発生するということは極めて少なく
なり、その結果、この気孔の部分からの水分の浸入や吸
湿トラップによる耐湿性の劣化を確実に防止することが
できるものである。In the above embodiment of the present invention, the insulating substrate 11, the pair of lower electrodes 12 and 13 formed on the insulating substrate 11, and the pair of lower electrodes 1 are formed.
2 and 13, a thick film dielectric 14 formed over one of the lower electrodes 12 and the insulating substrate 11, and a pair of the lower electrodes 12, 1 from above the thick film dielectric 14.
3, an upper electrode 15 formed on the other lower electrode 13 and a resin protective film formed so as to cover the thick film dielectric 14, the upper electrode 15 and a part of the other lower electrode 13. 16 and at least a portion of the upper electrode 15 located on the thick film dielectric 14 is
A thick film conductive material composed of g, Pd, and an alloy thereof and a barium titanate-based or lead titanate-based ferroelectric material forming the thick film dielectric 14 is mixed to form a porous structure. Therefore, the upper electrode 15 is made porous like the thick film dielectric 14, and the resin having low hygroscopicity forming the resin protective film 16 easily penetrates into the upper electrode 15 as well. , This upper electrode 1
The resin is surely impregnated in the portion of the thick film dielectric 14 located under the upper electrode 5, and as a result, a cavity is generated in the portion of the thick film dielectric 14 located under the upper electrode 15. Since the number of pores in the resin protective film 16 is extremely reduced by the gas in the cavity as in the conventional case, the moisture intrusion from the pores and the moisture resistance deterioration due to the moisture absorption trap are reduced. Can be reliably prevented.
【００３２】なお、上記した本発明の一実施の形態にお
いては、上部電極１５を厚膜誘電体１４の上から一対の
下部電極１２，１３のうち、他方の下部電極１３の上に
かけて形成しているが、これに限定されるものではな
く、この上部電極１５は従来の技術で示したように、下
部電極を１個とし、そして厚膜誘電体の上から絶縁基板
の上にかけて形成するようにしてもよいものである。In the above embodiment of the present invention, the upper electrode 15 is formed on the thick film dielectric 14 and on the other lower electrode 13 of the pair of lower electrodes 12 and 13. However, the present invention is not limited to this, and the upper electrode 15 has one lower electrode as shown in the prior art and is formed on the thick film dielectric and the insulating substrate. It's okay.
【００３３】また、上記した本発明の一実施の形態にお
いては、上部電極１５を、Ａｇ，Ｐｄおよびこれらの合
金からなる厚膜導電材料に厚膜誘電体１４を構成するチ
タン酸バリウム系、チタン酸鉛系の強誘電材料を配合し
たもので構成することにより多孔質構造にしたものにつ
いて説明したが、これに限定されるものではなく、これ
以外に、上部電極１５を、Ａｇ，Ｐｄおよびこれらの合
金からなる厚膜導電材料にＳｉＯ2，Ａｌ2Ｏ3等の無機
フィラーを配合したもので構成することにより多孔質構
造にしてもよく、この場合は、上部電極１５が無機フィ
ラーを配合したことにより多孔質化されるため、この上
部電極１５にも樹脂保護膜１６を構成する吸湿性の小さ
い樹脂が浸透しやすくなり、そしてこの上部電極１５の
下に位置する厚膜誘電体１４の部分にも樹脂が確実に含
浸されることになり、これにより、厚膜誘電体１４全体
の樹脂含浸も均一なものが得られるため、厚膜誘電体１
４に空洞が発生するのも激減することになり、その結
果、従来のように空洞内の気体によって樹脂保護膜１６
に気孔が発生するということは極めて少なくなるため、
この気孔の部分からの水分の浸入や吸湿トラップによる
耐湿性の劣化を確実に防止することができるものであ
る。Further, in the above-described embodiment of the present invention, the upper electrode 15 is made of a thick film conductive material made of Ag, Pd, and an alloy thereof, and the thick film dielectric 14 is made of barium titanate or titanium. Although the one having a porous structure by being composed of a mixture of a lead acid-based ferroelectric material has been described, the present invention is not limited to this, and in addition to this, the upper electrode 15 is made of Ag, Pd and The thick film conductive material made of the above alloy may be mixed with an inorganic filler such as SiO 2 or Al 2 O 3 to form a porous structure. In this case, the upper electrode 15 is mixed with the inorganic filler. Since it is made porous by this, the resin having a low hygroscopic property that constitutes the resin protective film 16 easily penetrates into the upper electrode 15, and the thickness of the resin located below the upper electrode 15 is increased. In portions of the dielectric 14 results in the resin is reliably impregnated, thereby, for those resin impregnation of the entire thick film dielectric 14 is also uniform is obtained, the thick film dielectric 1
The number of cavities in 4 is also drastically reduced, and as a result, the gas in the cavities causes the resin protective film 16
Since the occurrence of pores in the
It is possible to reliably prevent the infiltration of water from the pores and the deterioration of the moisture resistance due to the moisture absorption trap.
【００３４】そしてまた、上記した本発明の一実施の形
態においては、厚膜コンデンサに適用したものについて
説明したが、厚膜チップＣネットワークや厚膜チップＲ
Ｃネットワークなどの複合部品に適用した場合でも、本
発明の一実施の形態と同様の効果が得られるものであ
る。Further, in the above-mentioned one embodiment of the present invention, the one applied to the thick film capacitor has been described, but the thick film chip C network and the thick film chip R are also described.
Even when it is applied to a composite component such as a C network, the same effect as that of the embodiment of the present invention can be obtained.
【００３５】[0035]
【発明の効果】以上のように本発明の厚膜コンデンサ
は、絶縁基板と、この絶縁基板の上に形成された下部電
極と、この下部電極の上から前記絶縁基板上にかけて形
成された厚膜誘電体と、この厚膜誘電体の上から前記絶
縁基板側に向けて形成された上部電極と、少なくとも前
記厚膜誘電体を被覆するように形成された樹脂保護膜と
を備え、前記上部電極における少なくとも厚膜誘電体上
に位置する部分を多孔質構造にしているため、この上部
電極は厚膜誘電体と同様に多孔質化されることになり、
これにより、上部電極にも樹脂保護膜を構成する吸湿性
の小さい樹脂が浸透しやすくなるため、この上部電極の
下に位置する厚膜誘電体の部分にも樹脂が確実に含浸さ
れることになり、その結果、上部電極の下に位置する厚
膜誘電体の部分に空洞が発生するのも激減するため、従
来のように空洞内の気体によって樹脂保護膜に気孔が発
生するということは極めて少なくなり、その結果、この
気孔の部分からの水分の浸入や吸湿トラップによる耐湿
性の劣化を確実に防止することができるという効果を奏
するものである。As described above, the thick film capacitor of the present invention has an insulating substrate, a lower electrode formed on the insulating substrate, and a thick film formed on the lower electrode and on the insulating substrate. The upper electrode includes a dielectric, an upper electrode formed from above the thick film dielectric toward the insulating substrate, and a resin protective film formed so as to cover at least the thick film dielectric. Since at least the portion located on the thick film dielectric has a porous structure, this upper electrode is made porous like the thick film dielectric,
As a result, the resin having a low hygroscopic property that constitutes the resin protective film easily penetrates into the upper electrode, so that the resin is surely impregnated into the thick film dielectric portion located under the upper electrode. As a result, the number of cavities formed in the thick film dielectric below the upper electrode is drastically reduced, and it is extremely unlikely that the gas in the cavities causes pores in the resin protective film as in the conventional case. As a result, it is possible to reliably prevent the infiltration of water from the pores and the deterioration of the moisture resistance due to the moisture absorption trap.
【図１】本発明の一実施の形態における厚膜コンデンサ
の断面図FIG. 1 is a sectional view of a thick film capacitor according to an embodiment of the present invention.
【図２】（ａ）〜（ｄ）同厚膜コンデンサの製造方法を
示す製造工程図2A to 2D are manufacturing process diagrams showing a method of manufacturing the same thick film capacitor.
【図３】従来の上部電極における抵抗値と、本発明の一
実施の形態の上部電極における抵抗値を示す特性図FIG. 3 is a characteristic diagram showing a resistance value of a conventional upper electrode and a resistance value of the upper electrode according to an embodiment of the present invention.
【図４】従来の上部電極における容量値と、本発明の一
実施の形態の上部電極における容量値の特性図FIG. 4 is a characteristic diagram of a capacitance value of a conventional upper electrode and a capacitance value of an upper electrode according to an embodiment of the present invention.
【図５】従来の上部電極と、本発明の一実施の形態にお
ける上部電極の減衰特性図FIG. 5 is a damping characteristic diagram of a conventional upper electrode and an upper electrode according to an embodiment of the present invention.
【図６】（ａ）従来の上部電極の耐湿負荷寿命試験の絶
縁抵抗値を示す特性図
（ｂ）同容量値変化率を示す特性図
（ｃ）同ｔａｎδを示す特性図FIG. 6A is a characteristic diagram showing an insulation resistance value in a conventional moisture resistance load life test of an upper electrode, FIG. 6B is a characteristic diagram showing the same capacitance value change rate, and FIG. 6C is a characteristic diagram showing the same tan δ.
【図７】（ａ）本発明の一実施の形態における上部電極
の耐湿負荷寿命試験の絶縁抵抗値を示す特性図
（ｂ）同容量値変化率を示す特性図
（ｃ）同ｔａｎδを示す特性図FIG. 7A is a characteristic diagram showing an insulation resistance value of a humidity resistance load life test of an upper electrode in one embodiment of the present invention, FIG. 7B is a characteristic diagram showing the same capacitance value change rate, and FIG. 7C is a characteristic showing the same tan δ. Figure
【図８】（ａ）本発明の一実施の形態における上部電極
の耐湿負荷寿命試験の絶縁抵抗値を示す特性図
（ｂ）同容量値変化率を示す特性図
（ｃ）同ｔａｎδを示す特性図8A is a characteristic diagram showing an insulation resistance value of a moisture resistance load life test of an upper electrode in one embodiment of the present invention, FIG. 8B is a characteristic diagram showing the same capacitance value change rate, and FIG. 8C is a characteristic showing the same tan δ. Figure
【図９】従来の厚膜コンデンサの断面図FIG. 9 is a sectional view of a conventional thick film capacitor.
１１ 絶縁基板 １２，１３ 下部電極 １４ 厚膜誘電体 １５ 上部電極 １６ 樹脂保護膜 11 Insulating substrate 12, 13 Lower electrode 14 Thick film dielectric 15 Upper electrode 16 Resin protective film
───────────────────────────────────────────────────── フロントページの続き (72)発明者 井関 健 大阪府門真市大字門真1006番地 松下電器 産業株式会社内 Ｆターム(参考） 5E082 AB01 BB01 BC19 EE04 EE23 EE35 FF05 FG04 HH47 PP03 ─────────────────────────────────────────────────── ─── Continued front page (72) Inventor Ken Iseki 1006 Kadoma, Kadoma-shi, Osaka Matsushita Electric Sangyo Co., Ltd. F-term (reference) 5E082 AB01 BB01 BC19 EE04 EE23 EE35 FF05 FG04 HH47 PP03
Claims (3)
れた下部電極と、この下部電極の上から前記絶縁基板上
にかけて形成された厚膜誘電体と、この厚膜誘電体の上
から前記絶縁基板側に向けて形成された上部電極と、少
なくとも前記厚膜誘電体を被覆するように形成された樹
脂保護膜とを備え、前記上部電極における少なくとも厚
膜誘電体上に位置する部分を多孔質構造にした厚膜コン
デンサ。1. An insulating substrate, a lower electrode formed on the insulating substrate, a thick film dielectric formed from the lower electrode to the insulating substrate, and a thick film dielectric formed on the thick film dielectric. An upper electrode formed toward the insulating substrate side, and a resin protective film formed so as to cover at least the thick film dielectric, and a portion of the upper electrode located at least on the thick film dielectric. Thick film capacitor with a porous structure.
導電材料に厚膜導電体と同一材質の誘電体材料を９０対
１０〜６０対４０の配合比により配合したもので構成し
た請求項１記載の厚膜コンデンサ。2. The porous structure portion of the upper electrode is formed by mixing a thick film conductive material with a dielectric material of the same material as the thick film conductive material at a mixing ratio of 90:10 to 60:40. 1. The thick film capacitor described in 1.
導電材料に無機フィラーを配合したもので構成した請求
項１記載の厚膜コンデンサ。3. The thick film capacitor according to claim 1, wherein the porous structure portion of the upper electrode is formed by mixing a thick film conductive material with an inorganic filler.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002075742A JP4023187B2 (en) | 2002-03-19 | 2002-03-19 | Thick film capacitor |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002075742A JP4023187B2 (en) | 2002-03-19 | 2002-03-19 | Thick film capacitor |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007132518A Division JP4203679B2 (en) | 2007-05-18 | 2007-05-18 | Manufacturing method of thick film capacitor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2003272948A true JP2003272948A (en) | 2003-09-26 |
| JP4023187B2 JP4023187B2 (en) | 2007-12-19 |
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ID=29204735
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010278217A (en) * | 2009-05-28 | 2010-12-09 | Nec Corp | Capacitor, wiring board, and methods of manufacturing these |
-
2002
- 2002-03-19 JP JP2002075742A patent/JP4023187B2/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010278217A (en) * | 2009-05-28 | 2010-12-09 | Nec Corp | Capacitor, wiring board, and methods of manufacturing these |
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| Publication number | Publication date |
|---|---|
| JP4023187B2 (en) | 2007-12-19 |
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