JP2003264171A5 - - Google Patents
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- JP2003264171A5 JP2003264171A5 JP2003039795A JP2003039795A JP2003264171A5 JP 2003264171 A5 JP2003264171 A5 JP 2003264171A5 JP 2003039795 A JP2003039795 A JP 2003039795A JP 2003039795 A JP2003039795 A JP 2003039795A JP 2003264171 A5 JP2003264171 A5 JP 2003264171A5
- Authority
- JP
- Japan
- Prior art keywords
- etching
- mask
- substrate
- film
- difficult
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Claims (2)
前記マスクの側壁が前記基板の表面に対してなすテーパー角度を９０度未満になるよう該マスクをエッチングするステップと、エッチングの途中で洗浄を行ない、その後、再び上記マスクのエッチングを行なうステップを有して該マスクを成形するステップと、
該マスクを用いてエッチングするステップを備える
ことを特徴とする難エッチング材のエッチング方法。 The film of difficult to etch materials formed on a substrate, using the formed mask on the film, in the etching method of flame etchant for etching using up plasma,
Etching the mask such that the side wall of the mask has a taper angle of less than 90 degrees with respect to the surface of the substrate , cleaning in the middle of the etching, and then etching the mask again. And molding the mask,
Etching process of flame etchant, characterized in that it comprises the step of etching using the mask.
前記マスクの側壁が前記基板の表面に対する角度が９０度未満のマスクを用いてエッチングするステップと、
少なくとも１枚のウエハの処理が終了する迄は上記反応生成物を前記エッチング装置の壁へ付着させ続け、それにより基板の上に形成された被エッチング材の側壁が前記基板の表面に対する角度を実質的に９０度とするステップを備える
ことを特徴とするエッチング方法。 The film of difficult to etch materials formed on the base plate, by using a mask formed on the film, etching process of difficult to etch materials to deposit the reaction product to the walls of the etching apparatus with etched using plasma In
Etching with a mask whose sidewalls are less than 90 degrees relative to the surface of the substrate;
The reaction product continues to adhere to the wall of the etching apparatus until the processing of at least one wafer is completed, whereby the side wall of the material to be etched formed on the substrate has an angle with respect to the surface of the substrate. An etching method characterized by comprising a step of 90 degrees .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003039795A JP4109135B2 (en) | 2003-02-18 | 2003-02-18 | Etching method for difficult-to-etch materials |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003039795A JP4109135B2 (en) | 2003-02-18 | 2003-02-18 | Etching method for difficult-to-etch materials |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002061328A Division JP3840123B2 (en) | 2002-03-07 | 2002-03-07 | Etching method for difficult-to-etch materials |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2003264171A JP2003264171A (en) | 2003-09-19 |
| JP2003264171A5 true JP2003264171A5 (en) | 2005-08-25 |
| JP4109135B2 JP4109135B2 (en) | 2008-07-02 |
Family
ID=29208456
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003039795A Expired - Fee Related JP4109135B2 (en) | 2003-02-18 | 2003-02-18 | Etching method for difficult-to-etch materials |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4109135B2 (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7358192B2 (en) * | 2004-04-08 | 2008-04-15 | Applied Materials, Inc. | Method and apparatus for in-situ film stack processing |
| JP4653426B2 (en) | 2004-06-25 | 2011-03-16 | セイコーエプソン株式会社 | Semiconductor device |
| JP4905969B2 (en) * | 2007-03-08 | 2012-03-28 | 株式会社アルバック | Magnetic device manufacturing equipment |
| JP2011091374A (en) * | 2009-09-11 | 2011-05-06 | Samco Inc | Method of etching sapphire substrate |
| US11119405B2 (en) * | 2018-10-12 | 2021-09-14 | Applied Materials, Inc. | Techniques for forming angled structures |
-
2003
- 2003-02-18 JP JP2003039795A patent/JP4109135B2/en not_active Expired - Fee Related
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