JP2003264122A - Variable capacitance element - Google Patents
Variable capacitance elementInfo
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- JP2003264122A JP2003264122A JP2002063141A JP2002063141A JP2003264122A JP 2003264122 A JP2003264122 A JP 2003264122A JP 2002063141 A JP2002063141 A JP 2002063141A JP 2002063141 A JP2002063141 A JP 2002063141A JP 2003264122 A JP2003264122 A JP 2003264122A
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- movable body
- movable
- electrode
- displacing
- substrate
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Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、高周波回路に組み
込まれる可変容量素子に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a variable capacitance element incorporated in a high frequency circuit.
【０００２】[0002]
【背景技術】図４（ａ）には可変容量素子であるシャン
トスイッチ素子の一例が断面図により簡略化されて示さ
れている。このシャントスイッチ素子３０は誘電体から
成る基板３１を有し、この基板３１上にはコプレーナー
線路３２が形成されている。このコプレーナー線路３２
は高周波信号を通電する線路であり、３本の線路３３g
1，３３ｓ，３３g2が基板３１上に間隔を介し並設され
て構成されている。その真ん中の線路３３ｓは信号線路
と成し、信号線路３３ｓの両側の線路３３g1，３３g2は
グランド線路と成している。2. Description of the Related Art FIG. 4 (a) shows a simplified sectional view of an example of a shunt switch element which is a variable capacitance element. The shunt switch element 30 has a substrate 31 made of a dielectric material, and a coplanar line 32 is formed on the substrate 31. This coplanar line 32
Is a line that carries high-frequency signals, and three lines 33g
1, 33s, and 33g2 are arranged on the substrate 31 side by side with a space therebetween. The middle line 33s is a signal line, and the lines 33g1 and 33g2 on both sides of the signal line 33s are ground lines.
【０００３】コプレーナー線路３２上には、電極ブリッ
ジ３４が、その両端をそれぞれグランド線路３３g1，３
３g2に接合させ信号線路３３ｓの上方側を跨ぐ形態で配
置されている。図４（ｂ）にはコプレーナー線路３２と
電極ブリッジ３４を図４（ａ）の上方側から見た図が模
式的に示されている。On the coplanar line 32, an electrode bridge 34 is provided with ground lines 33g1 and 3g on both ends thereof.
It is arranged so as to be joined to 3g2 and straddle the upper side of the signal line 33s. FIG. 4B schematically shows a view of the coplanar line 32 and the electrode bridge 34 viewed from the upper side of FIG. 4A.
【０００４】このシャントスイッチ素子３０を構成する
信号線路３３ｓと電極ブリッジ３４間に直流電圧を印加
すると、信号線路３３ｓと電極ブリッジ３４間に静電引
力が発生する。この結果、発生した静電引力により、電
極ブリッジ３４が信号線路３３ｓに引き寄せられ、電極
ブリッジ３４と、コプレーナー線路３２の信号線路３３
ｓとの間の静電容量が変化する。When a DC voltage is applied between the signal line 33s and the electrode bridge 34 which constitute the shunt switch element 30, an electrostatic attractive force is generated between the signal line 33s and the electrode bridge 34. As a result, the electrostatic attraction force causes the electrode bridge 34 to be attracted to the signal line 33 s, and the electrode bridge 34 and the signal line 33 of the coplanar line 32.
The capacitance between s and s changes.
【０００５】ところで、コプレーナー線路３２と電極ブ
リッジ３４の等価回路は図４（ｃ）の如く表すことがで
きる。この図４（ｃ）において、符号Ｃは信号線路３３
ｓと電極ブリッジ３４間の静電容量を示し、符号Ｌは電
極ブリッジ３４が持つインダクタンス成分を示し、符号
Ｒは電極ブリッジ３４が持つ抵抗成分を示している。By the way, an equivalent circuit of the coplanar line 32 and the electrode bridge 34 can be expressed as shown in FIG. In FIG. 4 (c), reference numeral C is the signal line 33.
shows the electrostatic capacitance between s and the electrode bridge 34, the code | symbol L shows the inductance component which the electrode bridge 34 has, and the code | symbol R has shown the resistance component which the electrode bridge 34 has.
【０００６】信号線路３３ｓと電極ブリッジ３４間の間
隔が狭くて当該信号線路３３ｓと電極ブリッジ３４間の
静電容量Ｃが大きくなると、図４（ｃ）のＬＣ直列回路
の自己共振周波数が低下する。ＬＣ直列回路の自己共振
周波数において、そのＬＣ直列回路のインピーダンスは
最低となる。これにより、信号線路３３ｓから電極ブリ
ッジ３４を介してグランド線路３３g1，３３g2側を見た
ときにＬＣ直列回路の自己共振周波数において高周波的
に短絡した状態となって、コプレーナー線路３２（信号
線路３３ｓ）の高周波信号の導通がオフする。When the distance between the signal line 33s and the electrode bridge 34 is narrow and the electrostatic capacitance C between the signal line 33s and the electrode bridge 34 becomes large, the self-resonant frequency of the LC series circuit of FIG. 4C decreases. . At the self-resonant frequency of the LC series circuit, the impedance of the LC series circuit becomes the lowest. As a result, when the ground lines 33g1 and 33g2 are viewed from the signal line 33s through the electrode bridge 34, they are short-circuited at a high frequency at the self-resonant frequency of the LC series circuit, and the coplanar line 32 (signal line 33s). The high frequency signal is turned off.
【０００７】また、信号線路３３ｓと電極ブリッジ３４
間の間隔が広くて当該信号線路３３ｓと電極ブリッジ３
４間の静電容量Ｃが小さくなると、図４（ｃ）のＬＣ直
列回路の自己共振周波数が上昇する。この結果、信号線
路３３ｓから電極ブリッジ３４を介してグランド線路３
３g1，３３g2側を見たときに高周波的にオープンとなっ
て、コプレーナー線路３２の高周波信号の導通がオンす
る。In addition, the signal line 33s and the electrode bridge 34
There is a wide space between the signal line 33s and the electrode bridge 3
When the capacitance C between 4 becomes small, the self-resonant frequency of the LC series circuit of FIG. 4 (c) rises. As a result, from the signal line 33s through the electrode bridge 34 to the ground line 3
When viewed from the side of 3g1 and 33g2, it becomes open in terms of high frequency, and conduction of the high frequency signal of the coplanar line 32 is turned on.
【０００８】このシャントスイッチ素子３０では、前述
したように、電極ブリッジ３４を変位させて当該電極ブ
リッジ３４と信号線路３３ｓ間の静電容量Ｃを可変する
ことにより、コプレーナー線路３２の高周波信号の導通
オン・オフを制御することができる。In the shunt switch element 30, as described above, the electrode bridge 34 is displaced to change the electrostatic capacitance C between the electrode bridge 34 and the signal line 33s, so that the high-frequency signal on the coplanar line 32 is conducted. ON / OFF can be controlled.
【０００９】[0009]
【発明が解決しようとする課題】このシャントスイッチ
素子３０の構成では、電極ブリッジ３４は、駆動用固定
電極と対を成して静電引力を発生させるための駆動電極
としての機能と、信号線路３３ｓと対を成して図４
（ｃ）に示すＬＣ直列回路の自己共振周波数を決定する
ための静電容量用の電極としての機能とを兼用してい
る。In the structure of the shunt switch element 30, the electrode bridge 34 functions as a drive electrode for pairing with a fixed drive electrode to generate an electrostatic attraction force, and a signal line. Figure 33, paired with 33s
It also serves as a capacitance electrode for determining the self-resonant frequency of the LC series circuit shown in (c).
【００１０】しかしながら、コプレーナー線路３２を導
通する信号が例えばミリ波帯などの高周波信号の場合、
前述の如く静電容量変化を利用したＬＣ直列回路の自己
共振周波数の変化によってコプレーナー線路３２の高周
波信号の導通オン・オフを精度良く行うためには、電極
ブリッジ３４の電極面を小さく形成する必要がある。一
方、そのように電極ブリッジ３４を小さく形成すると、
当該電極ブリッジ３４を変位させるための静電引力を発
生させるためには、電極ブリッジ３４と駆動用固定電極
間に大きな直流電圧を印加しなければならない。しか
し、低い直流電圧で電極ブリッジ３４を変位させること
が望ましいので、変位駆動の面から見ると、電極ブリッ
ジ３４は大きく形成することが好ましい。However, when the signal conducted through the coplanar line 32 is a high frequency signal such as a millimeter wave band,
As described above, in order to accurately perform conduction ON / OFF of the high frequency signal of the coplanar line 32 by changing the self-resonant frequency of the LC series circuit using the change in capacitance, it is necessary to make the electrode surface of the electrode bridge 34 small. There is. On the other hand, if the electrode bridge 34 is formed so small,
In order to generate an electrostatic attractive force for displacing the electrode bridge 34, a large DC voltage must be applied between the electrode bridge 34 and the driving fixed electrode. However, since it is desirable to displace the electrode bridge 34 with a low DC voltage, it is preferable to form the electrode bridge 34 large in terms of displacement driving.
【００１１】このように、高周波信号の導通オン・オフ
制御に適した電極ブリッジ３４の大きさと、電極ブリッ
ジ３４自体の変位に適した電極ブリッジ３４の大きさと
にずれがあることから、電極ブリッジ３４の設計が難し
いという問題がある。As described above, since the size of the electrode bridge 34 suitable for controlling ON / OFF of the high frequency signal is different from the size of the electrode bridge 34 suitable for displacement of the electrode bridge 34 itself, the electrode bridge 34 is different. Is difficult to design.
【００１２】この発明は上記課題を解決するために成さ
れたものであり、その目的は、電極設計の自由度を向上
させることができる可変容量素子を提供することにあ
る。The present invention has been made to solve the above problems, and an object thereof is to provide a variable capacitance element capable of improving the degree of freedom in electrode design.
【００１３】[0013]
【課題を解決するための手段】上記目的を達成するため
に、この発明は次に示す構成をもって前記課題を解決す
るための手段としている。すなわち、第１の発明は、基
板と、この基板上に形成される高周波信号導通部と、基
板の上方側に基板と間隔を介して配置され高周波信号導
通部の少なくとも一部分に対向する可動体と、この可動
体に形成され高周波信号導通部に対向する可動電極とを
有し、前記基板上には可動体に対向する領域に可動体変
位用固定側電極が高周波信号導通部と間隔を介して形成
されており、前記可動体は、高周波信号に対して絶縁性
を有する半導体又は絶縁体により構成され、この可動体
の基板対向面には、前記基板上の可動体変位用固定側電
極に対向する可動体変位用可動側電極が前記可動電極と
間隔を介して形成されており、それら可動体変位用可動
側電極と可動体変位用固定側電極は、当該可動体変位用
可動側電極と可動体変位用固定側電極間の直流電圧印加
による静電引力によって可動体を基板側に変位させて、
可動体に形成されている可動電極と、基板上の高周波信
号導通部との間の静電容量を可変する容量可変手段を構
成していることを特徴としている。In order to achieve the above object, the present invention has the following constitution as means for solving the above problem. That is, a first aspect of the present invention includes a substrate, a high-frequency signal conducting portion formed on the substrate, and a movable body that is disposed above the substrate with a gap from the substrate and faces at least a part of the high-frequency signal conducting portion. A movable electrode that is formed on the movable body and faces the high-frequency signal conducting portion, and a movable body displacement fixed side electrode is provided in a region facing the movable body on the substrate, with the high-frequency signal conducting portion interposed therebetween. The movable body is formed of a semiconductor or an insulator having an insulating property with respect to a high frequency signal, and the substrate facing surface of the movable body faces a fixed electrode for displacing the movable body on the substrate. The movable-side electrode for displacing the movable body is formed with a gap from the movable electrode, and the movable-side electrode for displacing the movable body and the fixed-side electrode for displacing the movable body are movable with the movable-side electrode for displacing the movable body. Directly between the fixed side electrodes for body displacement And the movable member is displaced toward the substrate by electrostatic attraction by application of voltage,
It is characterized in that a capacitance varying means for varying the capacitance between the movable electrode formed on the movable body and the high frequency signal conducting portion on the substrate is constituted.
【００１４】第２の発明は、第１の発明の構成を備え、
可動体の上方側に間隔を介して上部部材が配置されてお
り、可動体変位用可動側電極を可動体の基板対向面に設
けるのに代えて、可動体変位用可動側電極は可動体の上
部部材対向面に形成され、また、可動体変位用固定側電
極を基板に設けるのに代えて、可動体変位用固定側電極
は、上部部材に、可動体変位用可動側電極に対向して形
成されており、それら可動体変位用可動側電極と可動体
変位用固定側電極は、当該可動体変位用可動側電極と可
動体変位用固定側電極間の直流電圧印加による静電引力
によって可動体を上部部材側に変位させて、可動体に形
成されている可動電極と、基板上の高周波信号導通部と
の間の静電容量を可変する容量可変手段を構成している
ことを特徴としている。A second invention comprises the structure of the first invention,
The upper member is arranged above the movable body with a space therebetween, and instead of providing the movable body displacing movable side electrode on the substrate facing surface of the movable body, the movable body displacing movable side electrode is Instead of providing the movable body displacing fixed side electrode on the substrate, the movable body displacing fixed side electrode is provided on the upper member so as to face the movable body displacing movable side electrode. The movable-side electrode for displacing the movable body and the fixed-side electrode for displacing the movable body are moved by electrostatic attraction due to DC voltage application between the movable-side electrode for displacing the movable body and the fixed-side electrode for displacing the movable body. It is characterized in that the body is displaced to the upper member side to constitute a capacitance varying means for varying the capacitance between the movable electrode formed on the movable body and the high frequency signal conducting portion on the substrate. There is.
【００１５】第３の発明は、第１又は第２の発明の構成
を備え、高周波信号導通部は、コプレーナー線路とマイ
クロストリップ線路のうちの一方側と成し、可変容量素
子は、可動電極と高周波信号導通部間の静電容量変化を
利用して高周波信号導通部であるコプレーナー線路又は
マイクロストリップ線路の信号の導通オン・オフを制御
するシャントスイッチ素子であることを特徴としてい
る。A third invention comprises the structure of the first or second invention, wherein the high-frequency signal conducting section is formed on one side of the coplanar line and the microstrip line, and the variable capacitance element is a movable electrode. It is a shunt switch element which controls conduction on / off of a signal of a coplanar line or a microstrip line which is a high frequency signal conducting part by utilizing a capacitance change between the high frequency signal conducting parts.
【００１６】[0016]
【発明の実施の形態】以下に、この発明に係る実施形態
例を図面に基づいて説明する。BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the drawings.
【００１７】図１（ａ）には可変容量素子であるシャン
トスイッチ素子の第１実施形態例が模式的な断面図によ
り示されている。FIG. 1A is a schematic sectional view showing a first embodiment of a shunt switch element which is a variable capacitance element.
【００１８】第１実施形態例のシャントスイッチ素子１
は、誘電体から成る基板２を有し、この基板２上にはコ
プレーナー線路３が形成されている。コプレーナー線路
３は、前述したと同様に、例えば５ＧHz以上の高周波信
号が導通する高周波信号通電部として機能する線路であ
り、３本の線路４g1，４ｓ，４g2が基板２上に間隔を介
し並設されている。真ん中の線路４ｓは信号線路であ
り、この信号線路４ｓの両側の線路４g1，４g2はグラン
ド線路である。The shunt switch element 1 of the first embodiment
Has a substrate 2 made of a dielectric material, and a coplanar line 3 is formed on the substrate 2. As described above, the coplanar line 3 is a line that functions as a high-frequency signal conducting part that conducts high-frequency signals of, for example, 5 GHz or more, and three lines 4g1, 4s, 4g2 are arranged side by side on the substrate 2 with a space therebetween. Has been done. The middle line 4s is a signal line, and the lines 4g1 and 4g2 on both sides of the signal line 4s are ground lines.
【００１９】また、基板２上には、例えばガラスから成
る上部部材５が、コプレーナー線路３の上方側を間隔を
介して覆うように配置されている。この上部部材５と基
板２は基板２の端縁部において接合している。この上部
部材５と基板２との間の間隙には、可動体６が、コプレ
ーナー線路３の一部分に間隔を介し対向して設けられて
いる。この可動体６は支持部７を介して上部部材５に支
持されている。可動体６は、絶縁体、又は、高周波信号
に対しては絶縁性を示すＳｉやＧａＡｓ等の高抵抗（例
えば抵抗率が1000Ωcm以上、かつ、10000Ωcmの範囲
内）の半導体により構成されている。An upper member 5 made of, for example, glass is arranged on the substrate 2 so as to cover the upper side of the coplanar line 3 with a gap. The upper member 5 and the substrate 2 are joined together at the edge of the substrate 2. A movable body 6 is provided in the gap between the upper member 5 and the substrate 2 so as to face a part of the coplanar line 3 with a gap. The movable body 6 is supported by the upper member 5 via the support portion 7. The movable body 6 is made of an insulator or a semiconductor having a high resistance (for example, a resistivity of 1000 Ωcm or more and within a range of 10000 Ωcm) such as Si or GaAs, which is insulating to a high frequency signal.
【００２０】可動体６の基板対向面６ａには、可動電極
８が、コプレーナー線路３の一方側のグランド電極４g1
から信号線路４ｓを介し他方側のグランド電極４g2にか
けて当該線路４g1，４ｓ，４g2の一部分に対向して形成
されている。また、可動体６の上部部材対向面６ｂには
可動体変位用可動側電極１０が形成されている。図１
（ｂ）には、それらコプレーナー線路３と可動電極８と
可動体変位用可動側電極１０を図１（ａ）の上方側から
見た配置関係例が模式図により示されている。A movable electrode 8 is provided on the substrate facing surface 6a of the movable body 6, and a ground electrode 4g1 on one side of the coplanar line 3 is provided.
To the ground electrode 4g2 on the other side via the signal line 4s, and is formed so as to face a part of the lines 4g1, 4s, 4g2. A movable body displacing movable side electrode 10 is formed on the upper member facing surface 6 b of the movable body 6. Figure 1
FIG. 1B is a schematic diagram showing an example of the positional relationship of the coplanar line 3, the movable electrode 8, and the movable body displacing movable side electrode 10 viewed from the upper side of FIG. 1A.
【００２１】さらに、上部部材５には、可動体変位用固
定側電極１１が、可動体変位用可動側電極１０と対向し
て形成されている。さらにまた、上部部材５にはスルー
ホール１２が形成されており、このスルーホール１２を
介して可動体変位用可動側電極１０と可動体変位用固定
側電極１１は、それぞれ、外部と導通することが可能と
なっている。Further, a fixed side electrode 11 for moving the movable body is formed on the upper member 5 so as to face the movable side electrode 10 for moving the movable body. Furthermore, a through hole 12 is formed in the upper member 5, and the movable body displacing movable side electrode 10 and the movable body displacing fixed side electrode 11 are electrically connected to the outside through the through hole 12. Is possible.
【００２２】外部からスルーホール１２を利用して可動
体変位用可動側電極１０と可動体変位用固定側電極１１
間に直流電圧（例えば５Ｖ程度の直流電圧）が印加され
ると、当該可動体変位用可動側電極１０と可動体変位用
固定側電極１１間に静電引力が発生し、当該静電引力に
よって可動体６が上部部材５側に引き寄せられる。これ
により、コプレーナー線路３の信号線路４ｓと可動電極
８間の間隔が広がって当該信号線路４ｓと可動電極８間
の静電容量Ｃが小さくなる。すなわち、この第１実施形
態例では、可動体変位用可動側電極１０と可動体変位用
固定側電極１１は、可動体６を変位させてコプレーナー
線路３の信号線路４ｓと可動電極８との間の静電容量Ｃ
を可変する容量可変手段を構成している。The movable side electrode 10 for moving the movable body and the fixed side electrode 11 for moving the movable body are utilized from outside through the through hole 12.
When a DC voltage (for example, a DC voltage of about 5V) is applied between them, an electrostatic attractive force is generated between the movable body displacing movable side electrode 10 and the movable body displacing fixed side electrode 11, and the electrostatic attractive force causes the electrostatic attractive force. The movable body 6 is pulled toward the upper member 5. As a result, the distance between the signal line 4s of the coplanar line 3 and the movable electrode 8 is increased, and the electrostatic capacitance C between the signal line 4s and the movable electrode 8 is reduced. That is, in the first embodiment, the movable body displacing movable side electrode 10 and the movable body displacing fixed side electrode 11 displace the movable body 6 so that the movable body 6 is displaced between the signal line 4s of the coplanar line 3 and the movable electrode 8. Capacitance C
And a capacity varying means for varying.
【００２３】この第１実施形態例のシャントスイッチ素
子１では、可動体変位用可動側電極１０と可動体変位用
固定側電極１１から成る容量可変手段によって、可動体
６が上部部材５側に変位してコプレーナー線路３と可動
電極８間の静電容量Ｃが小さくなると、この静電容量Ｃ
の変化によって信号線路４ｓから可動電極８を介してグ
ランド線路４g1，４g2を見たときのインピーダンスが大
きくなり、信号線路４ｓから可動電極８を介してグラン
ド側を見たときに高周波的にオープンとなる。これによ
り、コプレーナー線路３（信号線路４ｓ）の信号導通が
オンする。In the shunt switch element 1 of the first embodiment, the movable body 6 is displaced to the upper member 5 side by the capacitance varying means including the movable body displacing movable side electrode 10 and the movable body displacing fixed side electrode 11. Then, when the electrostatic capacitance C between the coplanar line 3 and the movable electrode 8 becomes small, this electrostatic capacitance C
The impedance of the signal line 4s when looking at the ground lines 4g1 and 4g2 from the signal line 4s through the movable electrode 8 becomes large, and when viewed from the signal line 4s through the movable electrode 8 at the ground side, it is opened at high frequency. Become. As a result, the signal conduction of the coplanar line 3 (signal line 4s) is turned on.
【００２４】反対に、可動体変位用可動側電極１０と可
動体変位用固定側電極１１間の静電引力が無くなると、
可動体６は図１（ａ）のような位置に配置されてコプレ
ーナー線路３と可動電極８間の静電容量Ｃが大きくなっ
て、信号線路４ｓは可動電極８を介してグランド側と高
周波的にショートする。これにより、コプレーナー線路
３（信号線路４ｓ）の信号導通がオフする。On the contrary, when the electrostatic attraction between the movable side electrode 10 for moving the movable body and the fixed electrode 11 for moving the movable body disappears,
The movable body 6 is arranged at a position as shown in FIG. 1A, the electrostatic capacitance C between the coplanar line 3 and the movable electrode 8 is increased, and the signal line 4s is connected to the ground side via the movable electrode 8 in a high frequency manner. Short to. As a result, the signal conduction of the coplanar line 3 (signal line 4s) is turned off.
【００２５】この第１実施形態例では、可動電極８は、
コプレーナー線路３を流れる高周波信号の周波数を考慮
して、可動電極８と信号線路４ｓ間の静電容量変化によ
り精度良くコプレーナー線路３の信号導通のオン・オフ
を行うことができるための電極面の大きさを有してい
る。また、可動体変位用可動側電極１０は、可動電極８
よりも大きな電極面を有し、低い直流電圧でもって可動
体６を上部部材５側に静電引力によって変位させること
ができるようになっている。In this first embodiment, the movable electrode 8 is
Considering the frequency of the high-frequency signal flowing through the coplanar line 3, it is possible to accurately turn on / off the signal conduction of the coplanar line 3 by changing the capacitance between the movable electrode 8 and the signal line 4s. Has a size. The movable side electrode 10 for displacing the movable body is the movable electrode 8
It has a larger electrode surface and can move the movable body 6 to the upper member 5 side by an electrostatic attraction with a low DC voltage.
【００２６】この第１実施形態例によれば、コプレーナ
ー線路３の信号導通のオン・オフを制御するための可動
電極８と、可動体６を変位させるための可動体変位用可
動側電極１０とを別々に形成したので、可動電極８と可
動体変位用可動側電極１０をそれぞれ独立に設計するこ
とができる。これにより、図４に示されるシャントスイ
ッチ素子３０の如く可動電極８の機能と可動体変位用可
動側電極１０の機能とを兼用する電極ブリッジ３４が設
けられる場合と比べて、電極設計の自由度を格段に向上
させることができる。According to the first embodiment, the movable electrode 8 for controlling ON / OFF of the signal conduction of the coplanar line 3 and the movable body displacing movable side electrode 10 for displacing the movable body 6. Since they are formed separately, the movable electrode 8 and the movable body displacing movable side electrode 10 can be designed independently of each other. As a result, the degree of freedom in electrode design is higher than in the case where the electrode bridge 34 having the function of the movable electrode 8 and the function of the movable body displacing movable side electrode 10 is provided as in the shunt switching element 30 shown in FIG. Can be significantly improved.
【００２７】よって、可動電極８は、コプレーナー線路
３の信号の周波数を考慮して当該高周波信号の導通オン
・オフを精度良く行うことができる適切な大きさを持つ
ことができる。また、可動体変位用可動側電極１０は、
低い直流電圧でもって可動体６を静電引力により変位さ
せることができる適切な大きさを持つことができる。す
なわち、少ない消費電力でコプレーナー線路３の信号導
通のオン・オフを精度良く制御することができるシャン
トスイッチ素子１を提供することが容易となる。Therefore, the movable electrode 8 can have an appropriate size capable of accurately performing conduction ON / OFF of the high frequency signal in consideration of the frequency of the signal of the coplanar line 3. Further, the movable side electrode 10 for moving the movable body is
It is possible to have an appropriate size that allows the movable body 6 to be displaced by electrostatic attraction with a low DC voltage. That is, it becomes easy to provide the shunt switch element 1 capable of accurately controlling ON / OFF of signal conduction of the coplanar line 3 with low power consumption.
【００２８】また、図４に示すシャントスイッチ素子３
０では、電極ブリッジ３４自体が撓み変位するので、電
極ブリッジ３４は金属疲労を起こし易かったが、この第
１実施形態例では、可動電極８や可動体変位用可動側電
極１０とは別に可動体６が設けられており、この可動体
６の変位に伴って可動電極８と可動体変位用可動側電極
１０が変位する構成であるので、可動電極８や可動体変
位用可動側電極１０の金属疲労を抑制することができ
る。また、可動体６を柔軟性を持つ材料により構成する
ことによって、可動体６の変位による劣化を抑制するこ
とができる。これにより、この第１実施形態例の構成で
は、シャントスイッチ素子１の耐久性を向上させること
ができる。Further, the shunt switch element 3 shown in FIG.
At 0, since the electrode bridge 34 itself is flexibly displaced, the electrode bridge 34 is apt to cause metal fatigue. However, in the first embodiment, the movable body 8 and the movable body displacing movable side electrode 10 are provided separately from each other. 6 is provided, and the movable electrode 8 and the movable body displacing movable side electrode 10 are displaced in accordance with the displacement of the movable body 6, so that the movable electrode 8 and the movable body displacing movable side electrode 10 are made of metal. Fatigue can be suppressed. Further, by forming the movable body 6 with a flexible material, it is possible to suppress deterioration due to the displacement of the movable body 6. Thereby, in the configuration of the first embodiment, the durability of the shunt switch element 1 can be improved.
【００２９】以下に、第２実施形態例を説明する。な
お、この第２実施形態例の説明では、第１実施形態例と
同一構成部分には同一符号を付し、その共通部分の重複
説明は省略する。The second embodiment will be described below. In the description of the second embodiment, the same components as those in the first embodiment will be designated by the same reference numerals, and duplicate description of the common parts will be omitted.
【００３０】この第２実施形態例では、図２に示される
ように、可動体６の上面に可動体変位用可動側電極１０
を設けるのに代えて、可動体変位用可動側電極１０（１
０ａ，１０ｂ）が可動体６の基板対向面に可動電極８と
間隔を介して形成されている。また、基板２上には、可
動体変位用固定側電極１１（１１ａ，１１ｂ）が可動体
変位用可動側電極１０（１０ａ，１０ｂ）に対向させ、
かつ、コプレーナー線路３と間隔を介して形成されてい
る。さらに、基板２には固定部１３（１３ａ，１３ｂ）
が可動体６を挟み込むようにして配設されており、可動
体６は梁１４（１４ａ，１４ｂ）を介し固定部１３に支
持されている。In the second embodiment, as shown in FIG. 2, the movable side electrode 10 for displacing the movable body is provided on the upper surface of the movable body 6.
Instead of providing the movable side electrode 10 (1
0a, 10b) are formed on the surface of the movable body 6 facing the substrate with the movable electrode 8 interposed therebetween. Further, on the substrate 2, the fixed electrode 11 (11a, 11b) for displacement of the movable body is opposed to the movable side electrode 10 (10a, 10b) for displacement of the movable body,
Further, it is formed so as to be spaced apart from the coplanar line 3. Further, the substrate 2 has a fixing portion 13 (13a, 13b).
Are arranged so as to sandwich the movable body 6, and the movable body 6 is supported by the fixed portion 13 via the beams 14 (14a, 14b).
【００３１】第１実施形態例では、可動体変位用固定側
電極１１を可動体６の上方側に配置するために、上部部
材５を可動体６の上方側に配設していたが、この第２実
施形態例では、可動体変位用固定側電極１１は基板２上
に形成する構成であるために、上部部材５を設けなくと
も済む。このことから、この第２実施形態例では、上部
部材５が省略されている。これにより、シャントスイッ
チ素子１の構造および製造工程の簡略化を図ることがで
きる。In the first embodiment, the upper member 5 is arranged above the movable body 6 in order to arrange the fixed side electrode 11 for moving the movable body above the movable body 6. In the second embodiment, the movable body displacing fixed-side electrode 11 is formed on the substrate 2, so that the upper member 5 may not be provided. Therefore, the upper member 5 is omitted in the second embodiment. As a result, the structure of the shunt switch element 1 and the manufacturing process can be simplified.
【００３２】また、上部部材５を省略することができ、
さらに、可動体変位用可動側電極１０と可動体変位用固
定側電極１１から成る容量可変手段の静電引力によって
可動体６は上方側には変位しない構成であるので、シャ
ントスイッチ素子１の低背化を図ることができる。Further, the upper member 5 can be omitted,
Furthermore, since the movable body 6 is not displaced upward due to the electrostatic attractive force of the capacitance varying means composed of the movable body displacing movable side electrode 10 and the movable body displacing fixed side electrode 11, the shunt switch element 1 has a low displacement. The height can be reduced.
【００３３】上記以外の構成は、第１実施形態例と同様
である。The configuration other than the above is the same as that of the first embodiment.
【００３４】この第２実施形態例においても、第１実施
形態例と同様に、可動体変位用可動側電極１０と可動体
変位用固定側電極１１間に直流電圧を印加すると、当該
直流電圧に起因した静電引力が可動体変位用可動側電極
１０と可動体変位用固定側電極１１間に発生する。この
静電引力によって可動体６が基板２側に引き寄せられ
る。この可動体６の変位によって、可動電極８とコプレ
ーナー線路３間の間隔が狭くなって当該可動電極８とコ
プレーナー線路３間の静電容量Ｃが大きくなる。これに
より、可動電極８とコプレーナー線路３間が高周波的に
ショートしてコプレーナー線路３の信号導通がオフす
る。このように可動体６の変位による可動電極８とコプ
レーナー線路３間の静電容量Ｃの変化によって、コプレ
ーナー線路３の高周波信号の導通オン・オフが制御され
る。In the second embodiment, as in the first embodiment, when a DC voltage is applied between the movable body displacement movable side electrode 10 and the movable body displacement fixed side electrode 11, the DC voltage is changed to the corresponding DC voltage. The resulting electrostatic attraction is generated between the movable-side electrode 10 for moving the movable body and the fixed-side electrode 11 for moving the movable body. The movable body 6 is attracted to the substrate 2 side by this electrostatic attraction. Due to this displacement of the movable body 6, the distance between the movable electrode 8 and the coplanar line 3 is narrowed, and the electrostatic capacitance C between the movable electrode 8 and the coplanar line 3 is increased. As a result, the movable electrode 8 and the coplanar line 3 are short-circuited at high frequency, and the signal conduction of the coplanar line 3 is turned off. In this way, the change in the electrostatic capacitance C between the movable electrode 8 and the coplanar line 3 due to the displacement of the movable body 6 controls the conduction / off of the high-frequency signal of the coplanar line 3.
【００３５】なお、この発明は第１や第２の実施形態例
に限定されるものではなく、様々な実施の形態を採り得
る。例えば、第１や第２の実施形態例では、高周波信号
導通部としてコプレーナー線路３を例にして説明した
が、コプレーナー線路３に代えて、マイクロストリップ
線路を設けてもよい。The present invention is not limited to the first and second embodiments, but various embodiments can be adopted. For example, in the first and second embodiments, the coplanar line 3 is described as an example of the high-frequency signal conducting portion, but a microstrip line may be provided instead of the coplanar line 3.
【００３６】また、第１や第２の実施形態例の構成に加
えて、対向し合うコプレーナー線路３の表面と可動電極
８の表面のうちの少なくとも一方側に保護用の例えばＳ
ｉＮ等の絶縁膜を形成してもよい。In addition to the structures of the first and second embodiments, a protective layer such as S is provided on at least one of the surfaces of the coplanar line 3 and the movable electrode 8 facing each other.
An insulating film such as iN may be formed.
【００３７】さらに、第２実施形態例に示した図２の構
成では、上部部材５が省略されていたが、低背化を気に
しない場合などの場合には、可動体６やコプレーナー線
路３等の保護を図る観点から、第１実施形態例に示すよ
うに、基板２の上方側に上部部材５を設けてもよい。Further, although the upper member 5 is omitted in the configuration of FIG. 2 shown in the second embodiment, the movable body 6 and the coplanar line 3 are not required in the case where the height reduction is not considered. From the viewpoint of protecting the above, the upper member 5 may be provided above the substrate 2 as shown in the first embodiment.
【００３８】さらに、第１や第２の実施形態例では、シ
ャントスイッチ素子１はいわゆる並列スイッチであった
が、図３に示すような直列スイッチを構成してもよい。
つまり、図３において、コプレーナー線路３の信号線路
４ｓには分断部１５が形成されており、この分断部１５
の両端の線路部分に共通に対向するように可動電極８が
配置されている。なお、この場合、可動電極８は、グラ
ンド線路４g1，４g2には対向していない。Further, in the first and second embodiments, the shunt switch element 1 is a so-called parallel switch, but a series switch as shown in FIG. 3 may be formed.
That is, in FIG. 3, the dividing portion 15 is formed in the signal line 4s of the coplanar line 3, and the dividing portion 15 is formed.
The movable electrodes 8 are arranged so as to commonly face the line portions at both ends of. In this case, the movable electrode 8 does not face the ground lines 4g1 and 4g2.
【００３９】この構成では、可動電極８と、分断部１５
の両端の線路部分との間隔が狭くなり、当該可動電極８
と、分断部１５の両端の線路部分との間の静電容量が大
きくなって、可動電極８と、分断部１５の両端の線路部
分とが高周波的にショートすると、高周波信号は可動電
極８を介して信号線路４ｓを流れ当該信号線路４ｓの信
号導通がオンする。また反対に、可動電極８と、分断部
１５の両端の線路部分との間の間隔が広くなり、当該可
動電極８と、分断部１５の両端の線路部分との間の静電
容量が小さなって、可動電極８と、分断部１５の両端の
線路部分とが高周波的にオープンになると、信号線路４
ｓの高周波信号の導通はオフする。In this structure, the movable electrode 8 and the dividing portion 15
The space between the line portions at both ends of the
When the movable electrode 8 and the line portions at both ends of the dividing portion 15 are short-circuited in a high frequency due to an increase in electrostatic capacitance between the movable electrode 8 and the line portions at both ends of the dividing portion 15, a high frequency signal causes the movable electrode 8 to move. Through the signal line 4s to turn on the signal conduction of the signal line 4s. On the contrary, the distance between the movable electrode 8 and the line portions at both ends of the dividing portion 15 is widened, and the electrostatic capacitance between the movable electrode 8 and the line portions at both ends of the dividing portion 15 is small. Then, when the movable electrode 8 and the line portions at both ends of the dividing portion 15 are opened in high frequency, the signal line 4
The conduction of the high frequency signal of s is turned off.
【００４０】さらに、第１や第２の実施形態例では、シ
ャントスイッチ素子を例にして説明したが、本発明は、
例えば、高周波回路に組み込まれて可変コンデンサとし
て機能する可変容量素子にも適用することができるもの
である。Furthermore, in the first and second embodiments, the shunt switch element has been described as an example, but the present invention is
For example, it can be applied to a variable capacitance element that is incorporated in a high frequency circuit and functions as a variable capacitor.
【００４１】[0041]
【発明の効果】この発明によれば、高周波信号導通部と
対を成して当該高周波信号導通部との間に静電容量を発
生させる可動電極と、この可動電極が設けられている可
動体を静電引力を利用して変位させるための可動体変位
用可動側電極とを別々に設ける構成とした。According to the present invention, a movable electrode which is paired with a high frequency signal conducting portion to generate an electrostatic capacitance between the high frequency signal conducting portion and a movable body provided with this movable electrode. Is separately provided with a movable-side electrode for displacing a movable body for displacing by using electrostatic attraction.
【００４２】従来では、高周波信号導通部との間に静電
容量を生じさせるための電極（つまり、可動電極）とし
ての機能と、当該電極を変位させるための電極（つま
り、可動体変位用可動側電極）としての機能とを兼用す
る電極（電極ブリッジ）が設けられる構成であった。こ
の電極ブリッジの設計には、それら両方の機能を果たす
ための制約が多く、電極設計の自由度が低いものであっ
た。Conventionally, a function as an electrode (that is, a movable electrode) for generating an electrostatic capacitance between the high-frequency signal conducting portion and an electrode for displacing the electrode (that is, a movable body for moving a movable body). The structure is such that an electrode (electrode bridge) that also functions as a side electrode) is provided. The design of this electrode bridge has many restrictions for fulfilling both functions, and the degree of freedom in electrode design is low.
【００４３】これに対して、この発明では、それら機能
をそれぞれ別々の可動電極、可動体変位用可動側電極に
持たせる構成としたので、それら可動電極と可動体変位
用可動側電極とをそれぞれ独立に設計することができる
こととなり、電極設計の自由度を高めることができる。On the other hand, in the present invention, since the movable electrode and the movable body displacing movable side electrode are provided with these functions respectively, the movable electrode and the movable body displacing movable side electrode are respectively provided. Since they can be designed independently, the degree of freedom in electrode design can be increased.
【００４４】また、従来の電極ブリッジは、当該電極ブ
リッジ自体を撓み変形させることで、高周波信号導通部
と電極ブリッジ間の静電容量を可変する構成であったた
めに、電極ブリッジの金属疲労が発生し易かった。これ
に対して、この発明では、可動電極および可動体変位用
可動側電極は可動体に形成され、また、その可動体は金
属以外の例えば柔軟性と絶縁性を持つ材料により構成す
ることが可能である。このことから、可動体の変位によ
る劣化や、可動電極や可動体変位用可動側電極の金属疲
労が起こりにくく、これにより、可変容量素子の耐久性
を高めることができる。Further, since the conventional electrode bridge has a structure in which the electrostatic capacitance between the high-frequency signal conducting portion and the electrode bridge is changed by bending and deforming the electrode bridge itself, metal fatigue of the electrode bridge occurs. It was easy to do. On the other hand, in the present invention, the movable electrode and the movable-side electrode for displacing the movable body are formed on the movable body, and the movable body can be made of a material other than metal, for example, having flexibility and insulating properties. Is. From this, deterioration due to displacement of the movable body and metal fatigue of the movable electrode and the movable side electrode for displacing the movable body are unlikely to occur, whereby the durability of the variable capacitance element can be improved.
【００４５】さらに、可動体変位用可動側電極が可動体
の基板対向面に形成され、また、可動体変位用固定側電
極が基板上に形成されているものにあっては、可動体変
位用固定側電極を可動体の上方側に配置するための上部
部材を設けなくとも済むので、上部部材を省略すること
ができる。これにより、可変容量素子の構造および製造
工程の簡略化を図ることができる。Further, in the case where the movable body displacing movable side electrode is formed on the substrate facing surface of the movable body, and the movable body displacing fixed side electrode is formed on the substrate, Since it is not necessary to provide an upper member for disposing the fixed electrode on the upper side of the movable body, the upper member can be omitted. Accordingly, the structure of the variable capacitance element and the manufacturing process can be simplified.
【００４６】また、そのように上部部材を省略すること
ができ、さらに、可動体は、可動体変位用可動側電極と
可動体変位用固定側電極間の静電引力によって基板側に
変位するものであり、静電引力によって基板から離れる
上方側に変位するものではないので、可変容量素子の低
背化を図ることができる。Further, the upper member can be omitted, and the movable body is displaced toward the substrate side by the electrostatic attraction between the movable side electrode for displacing the movable body and the fixed side electrode for displacing the movable body. However, since it is not displaced upward due to electrostatic attraction, the height of the variable capacitance element can be reduced.
【００４７】高周波信号導通部がコプレーナー線路又は
マイクロストリップ線路であり、可変容量素子はシャン
トスイッチ素子であるものにあっては、高周波信号導通
部の信号導通オン・オフを精度良く制御するためには、
可動電極は、高周波信号導通部を流れる高周波信号の高
い周波数に応じて電極面を小さく形成することが好まし
い。一方、可動体を低い電圧で変位させるためには、可
動体変位用可動側電極と可動体変位用固定側電極の対向
し合う電極面を大きく形成することが好ましい。In the case where the high-frequency signal conducting portion is a coplanar line or a microstrip line and the variable capacitance element is a shunt switch element, in order to accurately control the signal conduction on / off of the high-frequency signal conducting portion. ,
It is preferable that the movable electrode has a small electrode surface in accordance with the high frequency of the high frequency signal flowing through the high frequency signal conducting portion. On the other hand, in order to displace the movable body at a low voltage, it is preferable to form large opposing electrode surfaces of the movable body displacement movable side electrode and the movable body displacement fixed side electrode.
【００４８】この発明では、可動電極と、可動体変位用
可動側電極とを独立して設計することができるので、高
周波信号導通部の信号導通のオン・オフ制御に適した大
きさに可動電極を適切に設計でき、かつ、この可動電極
とは別に、可動体の変位駆動に適した大きさに可動体変
位用可動側電極を適切に設計することができる。これに
より、低い電圧供給で精度良く高周波信号の導通オン・
オフを制御できる性能の高いシャントスイッチ素子を提
供することが容易となる。In the present invention, since the movable electrode and the movable side electrode for displacing the movable body can be designed independently, the movable electrode has a size suitable for ON / OFF control of signal conduction in the high frequency signal conduction section. In addition to the movable electrode, the movable-side electrode for displacing the movable body can be appropriately designed to have a size suitable for displacement driving of the movable body. This enables high-frequency signal conduction to be turned on accurately with a low voltage supply.
It becomes easy to provide a high-performance shunt switch element capable of controlling OFF.
【図１】第１実施形態例の可変容量素子であるシャント
スイッチ素子を説明するための図である。FIG. 1 is a diagram illustrating a shunt switch element that is a variable capacitance element according to a first embodiment.
【図２】第２実施形態例を説明するための模式的な断面
図である。FIG. 2 is a schematic sectional view for explaining a second embodiment example.
【図３】その他の実施形態例を説明するための図であ
る。FIG. 3 is a diagram for explaining another embodiment example.
【図４】従来例を説明するための図である。FIG. 4 is a diagram for explaining a conventional example.
１ シャントスイッチ素子 ２ 基板 ３ コプレーナー線路 ５ 上部部材 ６ 可動体 ８ 可動電極 １０ 可動体変位用可動側電極 １１ 可動体変位用固定側電極 1 Shunt switch element 2 substrates 3 coplanar tracks 5 Upper member 6 movable body 8 movable electrodes 10 Movable side electrode for moving body 11 Fixed electrode for moving body
───────────────────────────────────────────────────── フロントページの続き (72)発明者 川合 浩史 京都府長岡京市天神二丁目26番10号 株式 会社村田製作所内 (72)発明者 竹村 光司 京都府長岡京市天神二丁目26番10号 株式 会社村田製作所内 (72)発明者 小中 義宏 京都府長岡京市天神二丁目26番10号 株式 会社村田製作所内 ─────────────────────────────────────────────────── ─── Continued front page (72) Inventor Hiroshi Kawai 2-10-10 Tenjin, Nagaokakyo, Kyoto Stock Murata Manufacturing Co., Ltd. (72) Inventor Koji Takemura 2-10-10 Tenjin, Nagaokakyo, Kyoto Stock Murata Manufacturing Co., Ltd. (72) Inventor Yoshihiro Konaka 2-10-10 Tenjin, Nagaokakyo, Kyoto Stock Murata Manufacturing Co., Ltd.
Claims (3)
信号導通部と、基板の上方側に基板と間隔を介して配置
され高周波信号導通部の少なくとも一部分に対向する可
動体と、この可動体に形成され高周波信号導通部に対向
する可動電極とを有し、前記基板上には可動体に対向す
る領域に可動体変位用固定側電極が高周波信号導通部と
間隔を介して形成されており、前記可動体は、高周波信
号に対して絶縁性を有する半導体又は絶縁体により構成
され、この可動体の基板対向面には、前記基板上の可動
体変位用固定側電極に対向する可動体変位用可動側電極
が前記可動電極と間隔を介して形成されており、それら
可動体変位用可動側電極と可動体変位用固定側電極は、
当該可動体変位用可動側電極と可動体変位用固定側電極
間の直流電圧印加による静電引力によって可動体を基板
側に変位させて、可動体に形成されている可動電極と、
基板上の高周波信号導通部との間の静電容量を可変する
容量可変手段を構成していることを特徴とする可変容量
素子。1. A substrate, a high-frequency signal conducting portion formed on the substrate, a movable body which is disposed above the substrate with a space therebetween and faces at least a part of the high-frequency signal conducting portion, and the movable body. A movable electrode that is formed on the body and faces the high-frequency signal conducting portion, and a fixed-side electrode for displacing the movable body is formed on the substrate in a region facing the movable body with a gap between the high-frequency signal conducting portion. The movable body is composed of a semiconductor or an insulator having an insulating property with respect to a high frequency signal, and a movable body facing the substrate side surface of the movable body facing the fixed electrode for displacing the movable body on the substrate. The movable side electrode for displacement is formed with a gap from the movable electrode, and the movable side electrode for movable body displacement and the fixed side electrode for movable body displacement are
A movable electrode that is formed on the movable body by displacing the movable body toward the substrate side by an electrostatic attraction due to a DC voltage application between the movable body displacement movable side electrode and the movable body displacement fixed side electrode;
A variable capacitance element, comprising a capacitance varying means for varying an electrostatic capacitance between a high frequency signal conducting portion on a substrate.
が配置されており、可動体変位用可動側電極を可動体の
基板対向面に設けるのに代えて、可動体変位用可動側電
極は可動体の上部部材対向面に形成され、また、可動体
変位用固定側電極を基板に設けるのに代えて、可動体変
位用固定側電極は、上部部材に、可動体変位用可動側電
極に対向して形成されており、それら可動体変位用可動
側電極と可動体変位用固定側電極は、当該可動体変位用
可動側電極と可動体変位用固定側電極間の直流電圧印加
による静電引力によって可動体を上部部材側に変位させ
て、可動体に形成されている可動電極と、基板上の高周
波信号導通部との間の静電容量を可変する容量可変手段
を構成していることを特徴とする請求項１記載の可変容
量素子。2. An upper member is disposed above the movable body with a space therebetween, and instead of providing the movable body displacing movable side electrode on the substrate facing surface of the movable body, the movable body displacing movable side. The electrode is formed on the upper member facing surface of the movable body, and instead of providing the movable body displacement fixed side electrode on the substrate, the movable body displacement fixed side electrode is provided on the upper member and the movable body displacement movable side. The movable side electrode for displacing the movable body and the fixed side electrode for displacing the movable body are formed so as to face the electrodes, and DC voltage is applied between the movable side electrode for displacing the movable body and the fixed side electrode for displacing the movable body. By displacing the movable body to the upper member side by electrostatic attraction, a capacitance varying means for varying the capacitance between the movable electrode formed on the movable body and the high frequency signal conducting portion on the substrate is configured. The variable capacitance element according to claim 1, wherein:
とマイクロストリップ線路のうちの一方側と成し、可変
容量素子は、可動電極と高周波信号導通部間の静電容量
変化を利用して高周波信号導通部であるコプレーナー線
路又はマイクロストリップ線路の信号の導通オン・オフ
を制御するシャントスイッチ素子であることを特徴とす
る請求項１又は請求項２記載の可変容量素子。3. The high-frequency signal conducting section is formed on one side of the coplanar line and the microstrip line, and the variable capacitance element utilizes the capacitance change between the movable electrode and the high-frequency signal conducting section. 3. The variable capacitance element according to claim 1, wherein the variable capacitance element is a shunt switch element that controls conduction / on / off of a signal of a coplanar line or a microstrip line that is a conductive portion.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002063141A JP3783635B2 (en) | 2002-03-08 | 2002-03-08 | Shunt switch element |
| EP03004095A EP1343190A3 (en) | 2002-03-08 | 2003-02-25 | Variable capacitance element |
| US10/379,082 US6833985B2 (en) | 2002-03-08 | 2003-03-05 | Variable capacitance element |
| US10/948,718 US7027284B2 (en) | 2002-03-08 | 2004-09-24 | Variable capacitance element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002063141A JP3783635B2 (en) | 2002-03-08 | 2002-03-08 | Shunt switch element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2003264122A true JP2003264122A (en) | 2003-09-19 |
| JP3783635B2 JP3783635B2 (en) | 2006-06-07 |
Family
ID=29196563
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002063141A Expired - Fee Related JP3783635B2 (en) | 2002-03-08 | 2002-03-08 | Shunt switch element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3783635B2 (en) |
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| WO2005093951A1 (en) * | 2004-03-26 | 2005-10-06 | Mitsubishi Denki Kabushiki Kaisha | Phase circuit, high-frequency switch, and phase device |
| US7126447B2 (en) | 2002-12-12 | 2006-10-24 | Murata Manufacturing Co., Ltd. | RF-mems switch |
| JP2006310053A (en) * | 2005-04-27 | 2006-11-09 | Sanyo Electric Co Ltd | Micro-machine switch |
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