JP2003260586A - Reduction-type solder joining apparatus - Google Patents
Reduction-type solder joining apparatusInfo
- Publication number
- JP2003260586A JP2003260586A JP2002063959A JP2002063959A JP2003260586A JP 2003260586 A JP2003260586 A JP 2003260586A JP 2002063959 A JP2002063959 A JP 2002063959A JP 2002063959 A JP2002063959 A JP 2002063959A JP 2003260586 A JP2003260586 A JP 2003260586A
- Authority
- JP
- Japan
- Prior art keywords
- members
- chamber
- solder
- hydrogen
- tool head
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/77—Apparatus for connecting with strap connectors
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- H—ELECTRICITY
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L24/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L24/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
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- H01L24/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/4005—Shape
- H01L2224/4009—Loop shape
- H01L2224/40095—Kinked
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/401—Disposition
- H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/40225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/77—Apparatus for connecting with strap connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/83009—Pre-treatment of the layer connector or the bonding area
- H01L2224/83048—Thermal treatments, e.g. annealing, controlled pre-heating or pre-cooling
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- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/83801—Soldering or alloying
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- H—ELECTRICITY
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- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
- H01L2224/84053—Bonding environment
- H01L2224/84054—Composition of the atmosphere
- H01L2224/84065—Composition of the atmosphere being reducing
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- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
- H01L2224/848—Bonding techniques
- H01L2224/84801—Soldering or alloying
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H01L2924/01004—Beryllium [Be]
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- H01L2924/01—Chemical elements
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Wire Bonding (AREA)
- Die Bonding (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】この発明は、還元性雰囲気中
でフラックスを使用しないで部材間をはんだ接合する還
元式はんだ接合技術に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a reducing type solder joining technique for joining members by soldering in a reducing atmosphere without using a flux.
【０００２】[0002]
【従来の技術】フラックスを使用しないではんだ接合で
きる還元式はんだ接合技術は、有機溶剤による洗浄を必
要としないので、有機溶剤不使用の利点に加えて、工数
も少なくなり、製品のコスト低減に有効である。従来の
還元式はんだ接合装置の主なものは、トンネル式のほぼ
密閉された空間内で厳密に還元性雰囲気を形成するもの
であり、設備そのものが大型で高額であり、且つガス使
用量も多くて、コストを低減し難く、半導体チップを含
めた接合対象部材が高温に長時間曝される。2. Description of the Related Art The reduction-type solder joining technology, which enables solder joining without using flux, does not require cleaning with an organic solvent. It is valid. The main thing of the conventional reduction type solder joining device is to form a strictly reducing atmosphere in a tunnel type almost enclosed space, the equipment itself is large and expensive, and the gas consumption is large. Therefore, it is difficult to reduce the cost, and the bonding target members including the semiconductor chip are exposed to high temperature for a long time.
【０００３】トンネル方式以外の方式としては、熱処理
空間を真空引き可能な処理槽として不純物の少ない還元
雰囲気をつくる方式（特開平９−314322号公報）や、還
元性ガスを満たす還元ボックスを形成して一方の部材を
入れ、加熱手段を備えたボンディングツールで他方の部
材を保持して両部材を圧接しながら加熱する方式（特開
平11−74314 号公報）等が公開されており、トンネル式
の装置構造で、高温の水素を吹き付けて接合部表面を還
元した後で水素雰囲気で熱処理する方式（特開平６−29
1457号公報）も公開されている。As a method other than the tunnel method, a method in which a heat treatment space is used as a processing tank capable of vacuuming a reducing atmosphere with a small amount of impurities (Japanese Patent Laid-Open No. 9-314322), or a reducing box filled with a reducing gas is formed. A method (for example, Japanese Patent Application Laid-Open No. 11-74314) in which one member is placed in a container, the other member is held by a bonding tool equipped with a heating means, and the two members are heated while being pressed is disclosed. In the device structure, a method of spraying high-temperature hydrogen to reduce the surface of the joint and then performing heat treatment in a hydrogen atmosphere (JP-A-6-29).
(1457 gazette) has also been published.
【０００４】[0004]
【発明が解決しようとする課題】フラックスを使用しな
いではんだ接合するためには、接合部表面及びはんだ表
面の酸化を防止し且つ生成されている酸化膜を還元する
有効な還元性状態を得ることが必要であり、そのための
重要な技術ポイントは、接合部位の温度を300 〜350 ℃
まで昇温すること、及び接合周囲雰囲気の酸素や水蒸気
等の酸化性不純物の濃度を10ppm 以下（以下ではこのよ
うな雰囲気を“有効な還元性雰囲気”と言う）に保つこ
と、である。In order to perform soldering without using a flux, it is necessary to prevent oxidation of the surface of the joint and the surface of the solder and obtain an effective reducing state for reducing the oxide film formed. Is necessary, and the important technical point for that is to maintain the temperature of the joint at 300 to 350 ℃.
And to maintain the concentration of oxidizing impurities such as oxygen and water vapor in the atmosphere around the junction at 10 ppm or less (hereinafter, such an atmosphere is referred to as an “effective reducing atmosphere”).
【０００５】しかし、接合対象部材の中には、半導体チ
ップのように、300 〜350 ℃という高温に保持される時
間をできるかぎり短くすることが求められるものもあ
る。一方、製造面からは、トンネル方式のような大型設
備を必要とせず、且つ製造タクトが短くて生産効率の良
い、安価で小型の装置が求められている。このような観
点から従来技術による還元式はんだ接合装置を検討する
と、上記の要求を十分に満たす装置はない。However, some members to be joined, such as semiconductor chips, are required to keep the time of holding at a high temperature of 300 to 350 ° C. as short as possible. On the other hand, from the viewpoint of manufacturing, there is a demand for an inexpensive and small device that does not require large equipment such as a tunnel system, has a short manufacturing tact, has high production efficiency, and is inexpensive. From this point of view, when the reduction-type solder joining device according to the prior art is examined, there is no device that sufficiently satisfies the above requirements.
【０００６】この発明の課題は、上記の技術的課題と製
造面からの要求とを満たすことができる、安価で、小型
で、使用ガス量が少なく、生産性に優れ、且つ部材の高
温保持時間が短い還元式はんだ接合装置を提供すること
である。The object of the present invention is to meet the above-mentioned technical problems and requirements from the manufacturing aspect, and it is inexpensive, small in size, uses a small amount of gas, is excellent in productivity, and retains a member at a high temperature for a long time. Is to provide a reduction type solder joining device having a short length.
【０００７】[0007]
【課題を解決するための手段】請求項１の発明は、水素
及び窒素の混合ガス雰囲気中ではんだ接合対象部材を加
熱し、フラックスを使用することなく接合対象部材間を
はんだ接合する還元式はんだ接合装置であって、前記接
合対象部材が混合ガス雰囲気外に準備される外準備部材
と混合ガス雰囲気内に準備される内準備部材とに分けら
れる方式の装置であり、外準備部材を保持して内準備部
材の位置まで搬送した後、両部材を接触させて加圧し、
且つはんだ表面及びはんだ接合部表面に生成された酸化
膜を還元するのに必要な温度まではんだ及び両部材を短
時間に加熱することができる加熱手段を備えたツールヘ
ッド及びその駆動機構と、前記混合ガス雰囲気をつくる
ための水素ガス及び窒素ガスの導入部を備え、且つ上面
に前記ツールヘッドを出し入れさせる位置調節可能なツ
ールヘッド出入口を備えたチャンバと、前記ツールヘッ
ド出入口の位置調節機構と、前記チャンバ内に設置さ
れ、複数個の内準備部材を搭載して予備加熱するヒータ
付きステージと、チャンバ内の接合位置に水素ガスを吹
き付けるノズルと、を備える。The invention of claim 1 is a reduction type solder for heating members to be soldered in a mixed gas atmosphere of hydrogen and nitrogen to perform soldering between members to be joined without using flux. The joining device is a device of a system in which the joining target member is divided into an outside preparation member prepared outside the mixed gas atmosphere and an inside preparation member prepared inside the mixed gas atmosphere, and holding the outside preparation member. After transporting to the position of the inner preparation member, contact both members and pressurize,
And a tool head and a driving mechanism therefor including a heating means capable of heating the solder and both members in a short time to a temperature required to reduce the oxide film formed on the solder surface and the solder joint surface, A chamber having an inlet for introducing hydrogen gas and nitrogen gas for creating a mixed gas atmosphere, and a tool head inlet / outlet for adjusting the position of the tool head on the top surface, and a position adjusting mechanism for the tool head inlet / outlet; A stage with a heater, which is installed in the chamber and preheats by mounting a plurality of internal preparation members, and a nozzle for blowing hydrogen gas to a bonding position in the chamber are provided.
【０００８】外準備部材を搬入するツールヘッドの出入
口のみを外気に対する開口部とするチャンバ方式に、ノ
ズルによる水素吹き付けを併用しているので、接合部の
雰囲気を有効な還元性雰囲気に保つことができ、ヒータ
付きステージによる内準備部材の予備加熱とツールヘッ
ドによる短時間加熱との併用によって、酸化膜の還元の
ために必要な温度を確保し且つその時間を短くすること
ができ、更に、ヒータ付きステージに複数個の内準備部
材を搭載し、それぞれの位置に合わせてツールヘッド出
入口を位置調節し、複数個の内準備部材の１つ１つに順
々に、ツールヘッドで外準備部材をチャンバ内に持ち込
んではんだ接合するので、有効な還元性雰囲気を維持し
ながら短い製造タクトではんだ接合ができる。Since the hydrogen spraying by the nozzle is used in combination with the chamber system in which only the inlet / outlet of the tool head for carrying in the external preparation member is an opening for the outside air, the atmosphere at the joint can be kept in an effective reducing atmosphere. It is possible to secure the temperature necessary for reducing the oxide film and shorten the time by using the preliminary heating of the inner preparation member by the stage with the heater and the short-time heating by the tool head together. A plurality of inner preparation members are mounted on the attached stage, and the tool head entrance / exit is adjusted according to the respective positions, and the outer preparation member is sequentially moved by the tool head to each of the plurality of inner preparation members. Since it is brought into the chamber for soldering, soldering can be performed with a short manufacturing tact while maintaining an effective reducing atmosphere.
【０００９】請求項２の発明は、請求項１の発明におい
て、ノズルに供給される水素ガスを加熱する吹付け水素
加熱手段を備える。ノズルから吹き出される水素ガスが
予備加熱されているので、そのガスが吹き付けられる接
合部の温度への影響が少なく且つ一定であるので、はん
だ接合部の温度が安定する。According to a second aspect of the present invention, in the first aspect of the present invention, a spray hydrogen heating means for heating the hydrogen gas supplied to the nozzle is provided. Since the hydrogen gas blown out from the nozzle is preheated, the temperature of the solder joint is stable because the temperature of the joint where the gas is blown is small and constant.
【００１０】請求項３の発明は、請求項１の発明におい
て、チャンバ内に導入される水素ガス及び窒素ガスを加
熱する導入ガス加熱手段を備える。水素ガス及び窒素ガ
スが予熱されてチャンバに導入されるので、ヒータ付き
ステージの温度及びそれに搭載されている内準備部材の
温度への影響が少なく且つ一定であるので、内準備部材
の接合部温度が安定する。According to a third aspect of the invention, in the first aspect of the invention, there is provided an introduction gas heating means for heating the hydrogen gas and the nitrogen gas introduced into the chamber. Since hydrogen gas and nitrogen gas are preheated and introduced into the chamber, there is little and constant influence on the temperature of the stage with a heater and the temperature of the inner preparation member mounted thereon, so that the temperature of the joint portion of the inner preparation member is constant. Is stable.
【００１１】[0011]
【発明の実施の形態】この発明による還元式はんだ接合
装置は、従来のトンネル式のような大型の還元式はんだ
接合装置の代替用として使用できる、安価で小型で製造
コストも安い、より簡便な装置としたものであり、はん
だ接合の接合対象部材が還元性の混合ガス雰囲気外に準
備される外準備部材と還元性雰囲気内に準備される内準
備部材とに分けられる方式の装置である。この発明によ
る還元式はんだ接合装置においては、内準備部材は、そ
の複数個または複数組が還元性雰囲気内で予備加熱され
た状態で保持され、外準備部材は、急熱急冷が可能なヒ
ータを備えた搬送手段によって還元性雰囲気内に持ち込
まれ、内準備部材と接触する位置で水素を吹き付けられ
ながら、搬送手段のヒータで所定温度の短時間加熱を受
けてはんだ接合される、ことが特徴である。接合空間全
体の還元性雰囲気に加えて、はんだ接合部に水素が吹き
付けられるので、搬送手段の出入りがあるにもかかわら
ず有効な還元性雰囲気が維持され、個々のはんだ接合が
搬送手段の短時間加熱で実行され、且つ複数個の内準備
部材が一括して接合空間内にセットされて予備加熱され
るので、製造タクトが短くなる。BEST MODE FOR CARRYING OUT THE INVENTION The reduction-type solder joint device according to the present invention can be used as a substitute for a large-scale reduction-type solder joint device such as a conventional tunnel type, is inexpensive, is small in size, is low in manufacturing cost, and is simpler. This is a device, and is a device of a system in which members to be joined for soldering are divided into an external preparation member prepared outside the reducing gas atmosphere and an internal preparation member prepared inside the reducing atmosphere. In the reduction type solder joining device according to the present invention, the inner preparation member is held in a state in which a plurality or a plurality of sets thereof are preheated in a reducing atmosphere, and the outer preparation member is a heater capable of rapid heating and quenching. It is characterized in that it is brought into a reducing atmosphere by a transportation means provided, and while being blown with hydrogen at a position where it comes into contact with the inner preparation member, it is soldered by being heated for a short time at a predetermined temperature by a heater of the transportation means. is there. In addition to the reducing atmosphere of the entire bonding space, hydrogen is blown to the solder joints, so an effective reducing atmosphere is maintained despite the transport means moving in and out, and individual solder joints can be used for a short time in the transport means. Since the heating is performed and a plurality of inner preparation members are collectively set in the bonding space and preheated, the manufacturing tact is shortened.
【００１２】以下に、この発明による還元式はんだ接合
装置の実施の形態について実施例を用いてより詳しく説
明する。
〔第１の実施例〕図１は、この発明による還元式はんだ
接合装置の第１の実施例の構成を示す縦方向の断面図で
あり、図２は横方向の断面図である。The embodiments of the reduction type solder joining apparatus according to the present invention will be described in more detail below with reference to examples. [First Embodiment] FIG. 1 is a longitudinal sectional view showing the configuration of a first embodiment of a reduction type solder joining apparatus according to the present invention, and FIG. 2 is a lateral sectional view.
【００１３】この実施例では、内準備部材がリードフレ
ーム７とその上に置かれた両面にはんだ層（下面はんだ
81及び上面はんだ82）を有する半導体チップ８とであ
り、外準備部材が両端にはんだ層（チップ側はんだ91及
び端子側はんだ92）を有する接続端子９である。なお、
図１には、外準備部材の搬送手段の内のパルスヒータを
内蔵するツールヘッド４のみが図示され、駆動機構は不
図示である。In this embodiment, the inner preparation member has a solder layer (bottom surface solder) on both sides of the lead frame 7 and the lead frame 7.
81 and the semiconductor chip 8 having the upper surface solder 82), and the external preparation member is the connection terminal 9 having the solder layers (the chip side solder 91 and the terminal side solder 92) at both ends. In addition,
In FIG. 1, only the tool head 4 incorporating the pulse heater in the conveyance means of the external preparation member is shown, and the drive mechanism is not shown.
【００１４】この実施例は、水素ガスを導入する水素導
入管21及び窒素ガスを導入する窒素導入管24を備え、水
素を吹き出すノズル23を備えたチャンバの蓋11で覆われ
るチャンバ１と、チャンバ１内に収納され、複数の内準
備部材を搭載して予備加熱するヒータ付きステージ３
と、外準備部材をチャンバ１外からチャンバ１内へ搬送
し、内準備部材に接触させてはんだ接合させるツールヘ
ッド４を含む搬送手段と、で構成される。In this embodiment, a chamber 1 is provided with a hydrogen introducing pipe 21 for introducing hydrogen gas and a nitrogen introducing pipe 24 for introducing nitrogen gas, and is covered with a chamber lid 11 having a nozzle 23 for blowing out hydrogen, and a chamber. A stage 3 with a heater, which is housed in one unit and preheats by mounting a plurality of inner preparation members.
And a transporting means including a tool head 4 for transporting the outer preparation member from the outside of the chamber 1 into the chamber 1 and contacting the inner preparation member for solder bonding.
【００１５】チャンバ１は、水素導入管21及び窒素導入
管24を備えヒータ付きステージ３を収容している上部開
放の容器部分と、その上部を覆う可動性のチャンバの蓋
11とで構成される。チャンバの蓋11には、ツールヘッド
４を出入りさせるためのツールヘッド出入口12が開けら
れており、図２に示した複数の接合位置に合わせて、不
図示の蓋位置調節機構によってその位置を調節される。
ツールヘッド出入口12の大きさは、外部からの空気の流
入をできるかぎり少なくするために、ツールヘッド４の
出入りに支障のない範囲で必要最少限度の大きさであ
る。また、チャンバの蓋11には、水素導入管21から分岐
されたノズル用配管22に接続されているノズル23が、は
んだ接合部に水素ガスを吹き付ける位置に調節されて取
り付けられている。このようなチャンバ１は、例えばア
ルミで製作することができる。The chamber 1 is provided with a hydrogen introducing pipe 21 and a nitrogen introducing pipe 24, and a container portion having an open upper portion for accommodating the stage 3 with a heater and a movable chamber lid for covering the upper portion.
Consists of 11 and. The chamber lid 11 is provided with a tool head inlet / outlet 12 for letting the tool head 4 in and out. The position is adjusted by a lid position adjusting mechanism (not shown) in accordance with the plurality of joining positions shown in FIG. To be done.
The size of the tool head inlet / outlet 12 is the minimum necessary size within a range that does not hinder the entrance / exit of the tool head 4 in order to reduce the inflow of air from the outside as much as possible. Further, a nozzle 23, which is connected to a nozzle pipe 22 branched from a hydrogen introducing pipe 21, is attached to the chamber lid 11 at a position adjusted to blow hydrogen gas to the solder joint. Such a chamber 1 can be made of aluminum, for example.
【００１６】チャンバの大きさと水素ガス及び窒素ガス
の流量の一例を示すと、下記の通りである。
チャンバの大きさ ： ５〜10Ｌ
水素ガス流量 ： ５Ｌ／分
窒素ガス流量 ： ５Ｌ／分
ヒータ付きステージ３は、カーボン製であって、予備加
熱のためのヒータを備えており、例えば 200〜300 ℃に
内準備部材であるリードフレーム７及び半導体チップ８
を予備加熱する。複数組の内準備部材が、図２に示す接
合位置に搭載される。An example of the size of the chamber and the flow rates of hydrogen gas and nitrogen gas is as follows. Chamber size: 5 to 10 L Hydrogen gas flow rate: 5 L / min Nitrogen gas flow rate: 5 L / min The heater-equipped stage 3 is made of carbon and has a heater for preheating, for example, 200 to 300 ° C. A lead frame 7 and a semiconductor chip 8 which are internal preparation members
Preheat. A plurality of sets of inner preparation members are mounted at the joining positions shown in FIG.
【００１７】ツールヘッド４は、タングステン製または
モリブデン製であって、パルスヒータを内蔵していて短
時間の加熱及び冷却が可能であり、更に、接続端子９等
の外準備部材を真空チャックするための貫通孔を備えて
おり、この貫通孔が真空ポンプに接続されている。ま
た、このツールヘッド４は、外準備部材を不図示の準備
位置から取り上げてチャンバ１内のはんだ接合位置まで
搬送して内準備部材とはんだ接合させるための不図示の
駆動機構によって駆動される。The tool head 4 is made of tungsten or molybdenum, has a built-in pulse heater, can be heated and cooled in a short time, and is used for vacuum chucking the external preparation member such as the connection terminal 9. Through holes, which are connected to a vacuum pump. Further, the tool head 4 is driven by a driving mechanism (not shown) for picking up the outer preparation member from a preparation position (not shown), conveying it to the solder bonding position in the chamber 1 and performing solder bonding with the inner preparation member.
【００１８】このような小型で簡便な装置で、フラック
スを使用することなく、短かい製造タクトで、安定した
品質のはんだ接合が得られた。参考までに、パルスヒー
タの加熱時間及び外準備部材の搬送も含めた１箇所での
はんだ接合に要する時間の一例を示すと、パルスヒータ
の加熱時間は30秒であり、はんだ接合の所要時間は60秒
である。With such a small-sized and simple apparatus, a soldering of stable quality was obtained with a short manufacturing tact without using flux. For reference, an example of the time required for soldering at one location including the heating time of the pulse heater and the transportation of the external preparation member is shown below. The heating time of the pulse heater is 30 seconds, and the time required for soldering is 60 seconds.
【００１９】〔第２の実施例〕図３は、第２の実施例の
構成を示す縦方向の断面図であり、第１の実施例の図１
に対応する。この実施例は、第１の実施例のノズル用配
管22に水素加熱ヒータ５を備えて、ノズル23からはんだ
接合部に吹き付けられる水素ガスを予備加熱するもので
ある。ノズル23からはんだ接合部へ吹き付けられる水素
ガスが予備加熱されるので、吹き付けられる水素ガスに
よるはんだ接合部の温度低下が少なくなる。その結果、
吹き付けられる状態のばらつきや水素流量のばらつきに
よるはんだ接合部温度のばらつきが少なくなり、はんだ
接合の品質が第１の実施例に比べてより安定した。[Second Embodiment] FIG. 3 is a longitudinal sectional view showing the structure of the second embodiment, and FIG. 1 of the first embodiment.
Corresponding to. In this embodiment, the nozzle pipe 22 of the first embodiment is provided with the hydrogen heater 5 to preheat the hydrogen gas blown from the nozzle 23 to the solder joint. Since the hydrogen gas blown from the nozzle 23 to the solder joint is preheated, the temperature drop of the solder joint due to the blown hydrogen gas is reduced. as a result,
Variations in the solder joint temperature due to variations in the sprayed state and variations in the hydrogen flow rate were reduced, and the quality of solder joining was more stable than in the first embodiment.
【００２０】ノズル23から吹き出される水素ガスの温度
を100 ℃としても、その効果は明確に認められるが、ヒ
ータ付きステージ３の温度と同じ程度にするのが最も有
効である。また、この温度が高くなると、パルスヒータ
の加熱時間を幾らか短くすることができる。
〔第３の実施例〕図４は、第３の実施例の構成を示す縦
方向の断面図であり、第１の実施例の図１に対応する。Even if the temperature of the hydrogen gas blown out from the nozzle 23 is set to 100 ° C., the effect is clearly recognized, but it is most effective to make it about the same as the temperature of the stage 3 with a heater. Further, when the temperature is increased, the heating time of the pulse heater can be shortened to some extent. [Third Embodiment] FIG. 4 is a vertical sectional view showing the structure of the third embodiment, which corresponds to FIG. 1 of the first embodiment.
【００２１】この実施例は、第１の実施例の水素導入管
21及び窒素導入管24のチャンバ１への導入部に近い部分
にガス加熱装置６を備えて、チャンバ１内へ導入される
水素ガス及び窒素ガスを予備加熱するものである。チャ
ンバ１内へ導入されるガスが予備加熱されるので、ヒー
タ付きステージ３に搭載されている内準備部材であるリ
ードフレーム７及び半導体チップ８の温度が安定し、リ
ードフレーム７と半導体チップ８と接続端子９とが、第
１の実施例の場合に比べてより安定した品質ではんだ接
合された。This embodiment is a hydrogen introducing pipe of the first embodiment.
A gas heating device 6 is provided in a portion of the nitrogen introducing pipe 21 and the nitrogen introducing pipe 24 near the introducing portion into the chamber 1 to preheat the hydrogen gas and the nitrogen gas introduced into the chamber 1. Since the gas introduced into the chamber 1 is preheated, the temperatures of the lead frame 7 and the semiconductor chip 8 which are the internal preparation members mounted on the stage 3 with a heater are stabilized, and the lead frame 7 and the semiconductor chip 8 are The connection terminal 9 and the connection terminal 9 were soldered together with a more stable quality as compared with the case of the first embodiment.
【００２２】第２の実施例の吹付け水素ガスの温度と同
様に、導入ガスの予備加熱温度を100 ℃としても明らか
にその効果を認めることができるが、ヒータ付きステー
ジ３に搭載されている内準備部材の温度と同じ程度にす
るのが最も効果的である。なお、第２の実施例の水素加
熱ヒータ５及び第３の実施例のガス加熱装置６を併用す
れば、はんだ接合品質が更に安定する。Similar to the temperature of the sprayed hydrogen gas in the second embodiment, the effect can be clearly recognized even when the preheating temperature of the introduced gas is 100 ° C., but it is mounted on the stage 3 with a heater. It is most effective to set the temperature to the same level as the temperature of the inner preparation member. If the hydrogen heater 5 of the second embodiment and the gas heating device 6 of the third embodiment are used together, the solder joint quality will be further stabilized.
【００２３】以上の実施例においては、予備はんだされ
た部材によるはんだ接合の場合を説明したが、接合対象
部材には予備はんだをしないで、はんだチップを供給す
る方法によっても、実施例と同様に、接合対象部材間を
はんだ接合することが可能である。また、ノズル23から
吹き出す水素ガスをツールヘッド４の加熱のタイミング
に限定して吹き出すようにすれば、水素ガスの使用を節
約することができる。In the above embodiments, the case of solder joining by means of pre-soldered members has been described, but a method of supplying solder chips without pre-soldering to members to be joined is also the same as in the embodiments. It is possible to solder-join the members to be joined. If the hydrogen gas blown out from the nozzle 23 is blown out only at the timing of heating the tool head 4, the use of hydrogen gas can be saved.
【００２４】[0024]
【発明の効果】請求項１の発明においては、外準備部材
を搬入するツールヘッドの出入口のみを外気に対する開
口部とするチャンバ方式に、ノズルによる水素吹き付け
を併用しているので、接合部の雰囲気を有効な還元性雰
囲気に保つことができ、ヒータ付きステージによる内準
備部材の予備加熱とツールヘッドによる短時間加熱との
併用によって、酸化膜の還元のために必要な温度を確保
し且つその時間を短くすることができ、更に、ヒータ付
きステージに複数個の内準備部材を搭載し、それぞれの
位置に合わせてツールヘッド出入口を位置調節し、複数
個の内準備部材の１つ１つに順々に、ツールヘッドで外
準備部材をチャンバ内に持ち込んではんだ接合するの
で、有効な還元性雰囲気を維持しながら短い製造タクト
ではんだ接合ができる。したがって、この発明によれ
ば、安価で、小型で、使用ガス量が少なく、生産性に優
れ、且つ部材の高温保持時間が短い還元式はんだ接合装
置を提供することができる。According to the first aspect of the invention, since the chamber system in which only the inlet / outlet of the tool head for carrying in the outer preparation member is the opening for the outside air, hydrogen spraying by the nozzle is used in combination, so that the atmosphere of the joint is improved. Can be maintained in an effective reducing atmosphere, and the temperature necessary for reducing the oxide film can be secured by using the preheating of the inner preparation member by the stage with the heater and the short-time heating by the tool head together. In addition, a plurality of inner preparation members are mounted on the stage with a heater, and the tool head inlet / outlet is adjusted according to each position. Each time, the tool head brings the external preparation member into the chamber for soldering, so soldering can be performed with a short manufacturing cycle while maintaining an effective reducing atmosphere. . Therefore, according to the present invention, it is possible to provide a reduction-type solder joining device which is inexpensive, small-sized, uses a small amount of gas, has excellent productivity, and has a short high-temperature holding time of members.
【００２５】請求項２の発明においては、ノズルから吹
き出される水素ガスが予備加熱されているので、そのガ
スが吹き付けられる接合部の温度への影響が少なく且つ
一定であるので、はんだ接合部の温度が安定し、はんだ
接合の品質が安定する。請求項３の発明においては、水
素ガス及び窒素ガスが予熱されてチャンバに導入される
ので、ヒータ付きステージの温度及びそれに搭載されて
いる内準備部材の温度への影響が少なく且つ一定である
ので、内準備部材の接合部温度が安定し、請求項２の発
明と同様に、はんだ接合の品質が安定する。According to the second aspect of the invention, since the hydrogen gas blown out from the nozzle is preheated, the influence on the temperature of the joint to which the gas is blown is small and constant. The temperature is stable and the quality of the solder joint is stable. In the invention of claim 3, since the hydrogen gas and the nitrogen gas are preheated and introduced into the chamber, there is little and constant influence on the temperature of the stage with a heater and the temperature of the inner preparation member mounted thereon. The temperature of the joint portion of the inner preparation member is stable, and the quality of the solder joint is stable as in the second aspect of the invention.
【図１】この発明による還元式はんだ接合装置の第１の
実施例の構成を示す縦方向の断面図FIG. 1 is a vertical cross-sectional view showing the configuration of a first embodiment of a reduction type solder joining device according to the present invention.
【図２】第１の実施例の構成を示す横方向の断面図FIG. 2 is a lateral cross-sectional view showing the configuration of the first embodiment.
【図３】第２の実施例の構成を示す縦方向の断面図FIG. 3 is a vertical cross-sectional view showing the configuration of the second embodiment.
【図４】第３の実施例の構成を示す縦方向の断面図FIG. 4 is a vertical cross-sectional view showing the configuration of the third embodiment.
100, 100a, 100b 還元式はんだ接合装置 １ チャンバ 11 チャンバの蓋 12 ツールヘッド出入口 21 水素導入管 22 ノズル用配管 23 ノズル 24 窒素導入管 ３ ヒータ付きステージ ４ ツールヘッド ５ 水素加熱ヒータ ６ ガス加熱装置 ７ リードフレーム 71 浮き端子 ８ 半導体チップ 81 下面はんだ 82 上面はんだ ９ 接続端子 91 チップ側はんだ 92 端子側はんだ 100, 100a, 100b Reducing solder joint equipment 1 chamber 11 chamber lid 12 Tool head entrance / exit 21 Hydrogen introduction pipe 22 Piping for nozzle 23 nozzle 24 nitrogen inlet pipe 3 heater stage 4 tool head 5 Hydrogen heater 6 gas heating device 7 Lead frame 71 Floating terminal 8 Semiconductor chip 81 Bottom solder 82 Top surface solder 9 Connection terminal 91 Chip side solder 92 Terminal side solder
Claims (3)
接合対象部材を加熱し、フラックスを使用することなく
接合対象部材間をはんだ接合する還元式はんだ接合装置
であって、 前記接合対象部材が混合ガス雰囲気外に準備される外準
備部材と混合ガス雰囲気内に準備される内準備部材とに
分けられる方式の装置であり、 外準備部材を保持して内準備部材の位置まで搬送した
後、両部材を接触させて加圧し、且つはんだ表面及びは
んだ接合部表面に生成された酸化膜を還元するのに必要
な温度まではんだ及び両部材を短時間に加熱することが
できる加熱手段を備えたツールヘッド及びその駆動機構
と、 前記混合ガス雰囲気をつくるための水素ガス及び窒素ガ
スの導入部を備え、且つ上面に前記ツールヘッドを出し
入れさせる位置調節可能なツールヘッド出入口を備えた
チャンバと、 前記ツールヘッド出入口の位置調節機構と、 前記チャンバ内に設置され、複数個の内準備部材を搭載
して予備加熱するヒータ付きステージと、 チャンバ内の接合位置に水素ガスを吹き付けるノズル
と、を備えることを特徴とする還元式はんだ接合装置。1. A reduction type solder joining apparatus for heating a solder joining target member in a mixed gas atmosphere of hydrogen and nitrogen to perform solder joining between joining target members without using flux, wherein the joining target member is It is a device of a system that is divided into an outer preparation member prepared outside the mixed gas atmosphere and an inner preparation member prepared in the mixed gas atmosphere, and after holding the outer preparation member and transporting it to the position of the inner preparation member, Equipped with a heating means capable of contacting and pressing both members, and heating the solder and both members in a short time to a temperature required to reduce the oxide film formed on the solder surface and the surface of the solder joint. A tool head and its drive mechanism, and an inlet for introducing hydrogen gas and nitrogen gas for creating the mixed gas atmosphere are provided, and the position where the tool head is moved in and out of the upper surface is adjustable. Chamber with a tool head inlet / outlet, a position adjusting mechanism for the tool head inlet / outlet, a stage with a heater installed in the chamber for preheating by mounting a plurality of internal preparation members, and a hydrogen at a bonding position in the chamber. A reducing-type solder joining apparatus, comprising: a nozzle for blowing gas.
付け水素加熱手段を備えることを特徴とする請求項１に
記載の還元式はんだ接合装置。2. The reduction type solder joining apparatus according to claim 1, further comprising a spray hydrogen heating means for heating hydrogen gas supplied to the nozzle.
ガスを加熱する導入ガス加熱手段を備えることを特徴と
する請求項１に記載の還元式はんだ接合装置。3. The reduction type solder joining apparatus according to claim 1, further comprising an introduction gas heating means for heating hydrogen gas and nitrogen gas introduced into the chamber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002063959A JP2003260586A (en) | 2002-03-08 | 2002-03-08 | Reduction-type solder joining apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002063959A JP2003260586A (en) | 2002-03-08 | 2002-03-08 | Reduction-type solder joining apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2003260586A true JP2003260586A (en) | 2003-09-16 |
Family
ID=28670956
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002063959A Withdrawn JP2003260586A (en) | 2002-03-08 | 2002-03-08 | Reduction-type solder joining apparatus |
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| Country | Link |
|---|---|
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| JP2006049456A (en) * | 2004-08-03 | 2006-02-16 | Fuji Electric Holdings Co Ltd | Method of manufacturing semiconductor device |
| JP2010017753A (en) * | 2008-07-14 | 2010-01-28 | Shimadzu Corp | Small heating furnace for simulation test of reflow furnace |
| JP2010103541A (en) * | 2008-10-27 | 2010-05-06 | Asm Assembly Automation Ltd | Direct die bonding using heated bond head |
| JP2010123786A (en) * | 2008-11-20 | 2010-06-03 | Shibuya Kogyo Co Ltd | Bonding device |
| JP2011228604A (en) * | 2010-04-23 | 2011-11-10 | Honda Motor Co Ltd | Manufacturing method of circuit board and circuit board |
| JP2021164928A (en) * | 2020-04-06 | 2021-10-14 | アスリートＦａ株式会社 | Joining device |
-
2002
- 2002-03-08 JP JP2002063959A patent/JP2003260586A/en not_active Withdrawn
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| JP2006049456A (en) * | 2004-08-03 | 2006-02-16 | Fuji Electric Holdings Co Ltd | Method of manufacturing semiconductor device |
| JP4599929B2 (en) * | 2004-08-03 | 2010-12-15 | 富士電機システムズ株式会社 | Method for manufacturing power semiconductor device |
| JP2010017753A (en) * | 2008-07-14 | 2010-01-28 | Shimadzu Corp | Small heating furnace for simulation test of reflow furnace |
| JP2010103541A (en) * | 2008-10-27 | 2010-05-06 | Asm Assembly Automation Ltd | Direct die bonding using heated bond head |
| JP2010123786A (en) * | 2008-11-20 | 2010-06-03 | Shibuya Kogyo Co Ltd | Bonding device |
| JP2011228604A (en) * | 2010-04-23 | 2011-11-10 | Honda Motor Co Ltd | Manufacturing method of circuit board and circuit board |
| JP2021164928A (en) * | 2020-04-06 | 2021-10-14 | アスリートＦａ株式会社 | Joining device |
| JP7425476B2 (en) | 2020-04-06 | 2024-01-31 | アスリートＦａ株式会社 | Bonding equipment |
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