JP2003258213A - Solid state imaging element module and its manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a solid state imaging element module which can prevent a flare caused by the reflection of an incident light on the interface of a transparent board from occurring, and to provide a method for manufacturing the same. <P>SOLUTION: The solid state imaging element module 1 has a transparent board 2, a solid state imaging element 3 and metal wirings 4, and comprises an antireflection film 6 provided on the board to suppress the incidence of a reflected light by the board and/or the wirings to the solid state imaging element. <P>COPYRIGHT: (C)2003,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solid-state image sensor module and a method for manufacturing a solid-state image sensor module. More specifically, the present invention relates to a solid-state imaging device module including a translucent substrate, a solid-state imaging device, and metal wiring, and a method for manufacturing the solid-state imaging device module.

[0002]

2. Description of the Related Art In a solid-state image sensor module, incident light transmitted through a light-transmissive substrate is received by a light-receiving portion of the solid-state image sensor, and a voltage is applied to the solid-state image sensor by wiring connected to the solid-state image sensor. Thus, the solid-state imaging device takes out the electric charge accumulated in the effective pixel area from the output section as an electric signal through the vertical transfer section and the horizontal transfer section. The taken out electric signal is recorded on a video or the like, or transmitted directly and reproduced on a television set on the receiving side. A solid-state image sensor module is a collection of elements, lens systems, etc. necessary for these operations.

In recent years, the solid-state image pickup device module is required to be used as a camera system including a signal processing system in a small information terminal such as a personal computer or a portable videophone. In order to realize the miniaturization of the solid-state imaging device module, wiring 102 and the like are formed on the surface of the transparent substrate 101 such as glass and quartz as shown in FIG. The structure in which the solid-state image sensor 103 is mounted is adopted.

[0004]

However, in the above-mentioned conventional solid-state imaging device module, incident light is reflected at the interface of the transparent substrate, and the reflected incident light is reflected again to the light-receiving portion of the solid-state imaging device. There is an inconvenience that flare, which is a phenomenon in which an unnecessary signal is output when light is incident, occurs. That is, for example, as shown in FIG.
The incident light reflected by the lower interface of the transparent substrate shown by A is reflected again by the upper interface of the transparent substrate shown by B, and the re-reflected incident light enters the light receiving part of the solid-state image sensor. 19 or incident light is reflected at the lower interface of the transparent substrate, and the reflected incident light is re-reflected by the lens 104 formed above the transparent substrate to re-reflect. The incident light is incident on the light receiving portion of the solid-state image sensor, or the incident light is reflected at the upper interface of the transparent substrate as shown in FIG. 20, and the reflected incident light is formed above the transparent substrate. Re-reflected by the lens, the re-reflected incident light enters the light receiving part of the translucent substrate, and unnecessary extra incident light enters the light receiving part. There was an inconvenience such as flare, which is a phenomenon in which is output.

The present invention was devised in view of the above points, and it is possible to prevent flare due to reflection of incident light at the interface of a transparent substrate, and a solid-state image pickup module. It is an object of the present invention to provide a method for manufacturing a solid-state image sensor module.

[0006]

In order to achieve the above-mentioned object, a solid-state image pickup device module according to the present invention is provided with a translucent substrate and is integrally fixed to the translucent substrate. A solid-state imaging device having a light-receiving portion that receives light transmitted through the light-transmitting substrate; and metal wiring arranged on the light-transmitting substrate on the solid-state imaging device side and connecting the solid-state imaging device to another circuit. In the solid-state imaging device module provided, an antireflection film that suppresses incidence of reflected light from the translucent substrate and / or the metal wiring to the solid-state imaging device is provided on the translucent substrate.

Here, since the antireflection film for suppressing the incidence of the reflected light from the transparent substrate and / or the metal wiring to the solid-state image pickup device is provided on the transparent substrate, the incident light is transmitted through the interface of the transparent substrate. And / or reflection at the metal wiring interface can be prevented.

In order to achieve the above-mentioned object, the method for manufacturing a solid-state image pickup device module according to the present invention is a translucent substrate and the translucent substrate is integrally fixed to the translucent substrate. A solid-state imaging device having a light-receiving portion that receives light transmitted through the transparent substrate, and metal wiring arranged on the light-transmissive substrate on the side of the solid-state imaging device and connecting the solid-state imaging device to another circuit. A method for manufacturing a solid-state imaging device module, comprising: a translucent substrate;
Alternatively, the method includes a step of providing an antireflection film that suppresses incidence of reflected light by the metal wiring, a step of providing the metal wiring on the antireflection film, and a step of joining the metal wiring and the solid-state imaging device.

Here, by providing the light-transmitting substrate with an antireflection film for suppressing the incidence of light reflected by the light-transmitting substrate and / or the metal wiring to the solid-state image pickup device, the incident light is transmitted through the interface of the light-transmitting substrate. And / or reflection at the metal wiring interface can be prevented.

[0010]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the drawings, for the understanding of the present invention.

FIG. 1 is a schematic sectional view for explaining an example of a solid-state image pickup device module to which the present invention is applied. The solid-state imaging device module 1 shown here includes a glass substrate 2, a solid-state imaging device 3, a metal wiring 4, an upper TiON film 5, a lower TiON film 6, an upper MgF ₂ film 7 and a lower Mg.
The F ₂ film 8 is provided. Here, the upper TiON film is formed on the upper portion of the glass substrate excluding the light incident portion on the light receiving portion of the solid-state image sensor, and the lower TiON film is formed on the lower portion of the glass substrate excluding the light incident portion on the light receiving portion of the solid-state image sensor. Has been formed.
The upper MgF ₂ film is formed on the incident part of the light to the light receiving section of the solid-state imaging device of the glass substrate upper, lower MgF ₂
The film is formed in the lower part of the glass substrate at the light incident part to the light receiving part of the solid-state imaging device. Furthermore, the metal wiring is the lower Ti
It is formed below the ON film, and the solid-state image sensor is joined to the metal wiring. The metal wiring indicated by reference character a in FIG. 1 is not joined to the solid-state image pickup element, but is joined to another semiconductor chip, a passive component, or the like (not shown) if necessary.

Here, the upper antireflection film is sufficient as long as it can prevent the reflection of incident light at the upper interface of the glass substrate indicated by reference numeral b in FIG. 1, and is not necessarily the TiON film described above as an example. It does not need to be limited, for example Ti
It may be an N film or a MgF ₂ film. Similarly, the upper T
It suffices that the iON film can prevent reflection of incident light at the interface of the upper part of the glass substrate, and it is not always necessary to form the iON film only on the upper part of the glass substrate excluding the incident part to the light receiving part of the solid-state imaging device. It may be formed on the entire upper portion of the glass substrate as shown in FIG. Note that Ti described as an example of the solid-state imaging device module to which the present invention is applied is described.
When the upper anti-reflection film is formed of a material having a small transmittance such as ON, the upper anti-reflection film is used for solid-state imaging so that the upper anti-reflection film does not prevent light from entering the light receiving portion of the solid-state image sensor. It is preferable that it is formed only on the upper part of the glass substrate excluding the incident part to the light receiving part of the element.

It is sufficient that the lower antireflection film is capable of preventing reflection of incident light at the lower interface of the glass substrate indicated by symbol c in FIG. 1, and is not necessarily limited to the TiON film described above as an example. Need not be done, eg TiN
Although it may be a film or a MgF ₂ film, for example, when the lower antireflection film is formed of a material having a high transmittance such as MgF _2, the light transmitted through the lower antireflection film is changed as shown in FIG. The lower antireflection film is made of TiON or T because it may be reflected by the surface of the metal wiring and the reflected light may cause flare.
It is preferable to use a material having a low transmittance such as iN. Similarly, the lower TiON film is sufficient if it can prevent reflection of incident light at the lower interface of the glass substrate.
The solid-state image sensor does not necessarily have to be formed only on the lower part of the glass substrate excluding the incident part of the light to the light receiving part.
It may be formed on the entire lower part of the glass substrate as shown in
As shown in FIG. 5, it may be formed only on the light incident portion on the metal wiring where the incident light is most likely to be reflected on the lower interface of the glass substrate. When the lower antireflection film is formed of a material having a small transmittance, such as TiON described as an example of the solid-state imaging device module to which the present invention is applied, the lower antireflection film is used for the light reception of the solid-state imaging device. It is preferable that the lower antireflection film is not formed at the light incident portion of the light receiving portion of the solid-state imaging device in the lower portion of the glass substrate so as not to hinder the light incident to the light incident portion. Further, reflection of incident light may occur also at the lower interface of the glass substrate (excluding the light incident portion on the light receiving portion of the solid-state imaging device) excluding the light incident portion on the metal wiring indicated by reference numeral d in FIG. Therefore, the lower anti-reflection film is formed not only on the light incident portion on the metal wiring where the incident light is most likely to be reflected, but also on the portion where the incident light may be reflected, in the lower interface of the glass substrate. Is preferred. That is, it is preferable that the lower antireflection film is formed not only on the light incident portion on the metal wiring but also on the lower portion of the glass substrate excluding the light incident portion on the light receiving portion of the solid-state imaging device.

Further, in the upper transmissive film, the incident light to the light receiving portion of the solid-state image pickup device is reflected at the upper interface of the glass substrate as indicated by reference numeral e in FIG. 6, and the incident light to the light receiving portion is not effectively utilized. It is enough to prevent
If the incident light to the light receiving portion can be effectively used, it is not necessarily limited to the MgF ₂ film described above as an example. Similarly, it suffices for the upper MgF ₂ film to be able to prevent the inconvenience that the incident light to the light receiving portion is not effectively utilized. It need not be formed only on the glass substrate, but may be formed on the entire upper portion of the glass substrate as shown in FIG. 7, for example. In FIG. 7, the upper MgF ₂ film is formed on the glass substrate, and the upper Tg is formed on the upper MgF ₂ film.
Although the iON film is formed, it is sufficient if the upper MgF ₂ film can prevent the inconvenience that the incident light to the light receiving portion of the solid-state imaging device is not effectively utilized.
It is sufficient that the ON film can prevent reflection of incident light at the upper interface of the glass substrate, and the upper MgF ₂ film is necessarily formed on the glass substrate and the upper TiON film is formed on the upper MgF ₂ film. The upper TiON film may be formed on the glass substrate and the upper MgF ₂ film may be formed on the upper TiON film as shown in FIG. 8, for example.

Further, in the lower transmission film, the incident light to the light receiving portion of the solid-state image pickup device is reflected at the lower interface of the glass substrate as indicated by the symbol f in FIG. 9, and the incident light to the light receiving portion is not effectively utilized. It is enough to prevent
If the incident light to the light receiving portion can be effectively used, it is not necessarily limited to the MgF ₂ film described above as an example. Similarly, the lower MgF ₂ film is sufficient as long as it can prevent the inconvenience that the incident light to the light receiving portion is not effectively utilized. It is not necessary to form only on the glass substrate, and may be formed on the entire lower portion of the glass substrate as shown in FIG. 10, for example. The lower MgF ₂ film is formed under the glass substrate 10, although lower TiON film under the lower MgF ₂ film is formed, light incident to the light receiving portion of the lower MgF ₂ film solid-state imaging device It is sufficient to prevent the inconvenience of not being effectively used, and it is sufficient for the lower TiON film to be able to prevent reflection of incident light at the lower interface of the glass substrate. It is not necessary to form the lower TiON film under the lower MgF ₂ film by forming _two films, for example, as shown in FIG. 11, the lower TiON film is formed under the glass substrate, and the lower TiON film is formed under the lower TiON film. A MgF ₂ film may be formed.

In the solid-state imaging device module to which the present invention is applied, the upper TiON film can prevent reflection of incident light at the upper interface of the glass substrate, and the lower TiON film can prevent reflection of incident light at the lower interface of the glass substrate. Thereby, flare caused by reflection of incident light at the upper (lower) interface of the glass substrate can be prevented, and the occurrence of imaging defects can be suppressed. Also, the upper MgF
It is possible to prevent the inconvenience that the incident light is reflected at the upper interface of the glass substrate by the _two films and the incident light to the light receiving part is not effectively utilized, and the incident light is reflected at the lower interface of the glass substrate to the light receiving part by the lower MgF ₂ film. By preventing the inconvenience that the incident light is not effectively utilized, the incident light to the light receiving portion can be effectively utilized, and the sensitivity of the solid-state imaging device module is improved.

In the example of the solid-state image pickup device module to which the present invention is applied, the upper TiON film, the lower TiON film,
Although the solid-state imaging device module including all of the upper MgF ₂ film and the lower MgF ₂ film has been described as an example, it does not necessarily include all of the upper TiON film, the lower TiON film, the upper MgF ₂ film, and the lower MgF ₂ film. There is no need, and it is sufficient if the upper TiON film and the like are formed as needed. That is, when reflection of incident light at the upper interface of the glass substrate is considered a problem, the upper TiON film is formed, and when reflection of incident light at the lower interface of the glass substrate is problematic, a lower TiON film is formed.
When the film is formed and the incident light is reflected at the upper interface of the glass substrate and the incident light to the light receiving part of the solid-state image sensor is not effectively utilized, the upper MgF ₂ film is formed and the incident light is reflected at the lower interface of the glass substrate. It is sufficient if the lower MgF ₂ film is formed when the incident light on the light receiving portion of the solid-state image sensor is not effectively utilized.

FIG. 12 is a schematic sectional view for explaining a method of forming an upper TiN film and an upper MgF ₂ film in an example of a method for manufacturing a solid-state image pickup device module to which the present invention is applied. In an example of the method of manufacturing a solid-state image sensor module to which the present invention is applied, first, as shown in FIG. 12A, the upper TiN film 10 is formed on one surface of the quartz substrate 9 by sputtering.

Here, similarly to an example of the solid-state image pickup device module to which the present invention is applied, it is sufficient that the upper antireflection film is capable of preventing reflection of incident light at the upper interface of the quartz substrate, and is not necessarily the above-mentioned example. The TiN film is not limited to the above described TiN film, and may be, for example, a TiON film or a MgF ₂ film. It is sufficient that the upper TiN film can be formed on one surface of the quartz substrate to prevent reflection of incident light at the upper interface of the quartz substrate, and is not necessarily formed by sputtering. Any method such as vapor deposition, plating, and CVD may be used as long as it can be formed on one surface of the quartz substrate.

Next, as shown in FIG.
The portion of the N film where light is incident on the light receiving portion of the solid-state image sensor is etched.

Here, it is sufficient if the upper TiN film is formed on one surface of the quartz substrate as described above to prevent reflection of incident light at the upper interface of the quartz substrate. The upper TiN film may be formed on the entire upper surface of the quartz substrate as long as it is possible to prevent the reflection of the incident light in the above step, and it is not always necessary to etch the upper TiN film. When the upper antireflection film is formed of a material having a low transmittance such as TiN, which is described as an example in the method for manufacturing the solid-state imaging device module to which the present invention is applied, the upper antireflection film is a solid-state imaging device. It is preferable to etch the part of the upper antireflection film where light is incident on the light receiving part of the solid-state imaging device so as not to interfere with the incidence of light on the light receiving part.

Then, as shown in FIG.
MgF on the iN film by vapor deposition _TwoForm a film.

Here, as in an example of the solid-state image pickup device module to which the present invention is applied, the upper transmission film reflects incident light to the light-receiving portion of the solid-state image pickup device at the upper interface of the quartz substrate, and causes incident light to the light-receiving portion. It is sufficient to prevent the inconvenience of not being effectively utilized, and it is not necessarily limited to the MgF ₂ film described above as an example as long as the incident light to the light receiving portion can be effectively utilized. Also, the upper Mg
It is sufficient if the F ₂ film is formed on one surface of the quartz substrate so that the incident light to the light receiving portion of the solid-state image sensor can be effectively utilized, and it is not always necessary to form the F ₂ film by vapor deposition, and the upper MgF ₂ film can be formed. Any method such as CVD may be used as long as the film can be formed on one surface of the quartz substrate.

Next, as shown in FIG. 12D, the upper Mg
Etching is performed so that the F ₂ film is formed in the light incident portion of the light receiving portion of the solid-state image sensor.

Here, it is sufficient if the upper MgF ₂ film is formed on one surface of the quartz substrate as described above so that the incident light to the light receiving portion of the solid-state image sensor can be effectively utilized. If it is possible to effectively utilize the incident light on the upper portion, the upper MgF _{2 is} entirely formed on the upper TiN film.
A film may be formed, and it is not always necessary to etch the upper MgF ₂ film.

The solid-state image pickup device module to which the present invention is applied
In one example of a method of manufacturing a tool, after forming an upper TiN film,
Upper MgF_TwoA film is formed, but the upper TiN film is a stone
It is possible to prevent reflection of incident light at the upper interface of the substrate.
Is enough, upper MgF _TwoThe film is the light receiving of the solid-state image sensor
Prevents the inconvenience that the incident light on the part is not used effectively
It is sufficient to be able to
After forming the film, the upper MgF_TwoNo need to form a film
Upper MgF_TwoAfter forming the film, the upper TiN film is formed
It doesn't matter.

FIG. 13 is a schematic cross-sectional view for explaining a method of forming a lower TiN film and a lower MgF ₂ film in an example of a method of manufacturing a solid-state image pickup device module to which the present invention is applied. In an example of the method for manufacturing the solid-state image sensor module to which the present invention is applied, the upper TiN film and the upper Mg are
The quartz substrate on which the F ₂ film is formed is inverted and the lower TiN film 11 is formed on the other surface of the quartz substrate by sputtering as shown in FIG.

Here, similarly to an example of the solid-state image pickup device module to which the present invention is applied, it is sufficient that the lower antireflection film is capable of preventing reflection of incident light at the lower interface of the quartz substrate, and is not necessarily the above-mentioned example. The TiN film is not limited to the above described TiN film, and may be, for example, a TiON film or a MgF ₂ film. It is sufficient that the lower TiN film is formed on the other surface of the quartz substrate to prevent reflection of incident light at the lower interface of the quartz substrate, and it is not always necessary to form the lower TiN film by sputtering. Any method such as vapor deposition, plating and CDV may be used as long as it can be formed on the other surface of the quartz substrate.

Next, as shown in FIG. 13B, the lower Ti
The portion of the N film where light is incident on the light receiving portion of the solid-state image sensor is etched.

Here, it is sufficient if the lower TiN film is formed on the other surface of the quartz substrate as described above to prevent reflection of incident light at the lower interface of the quartz substrate. If it is possible to prevent reflection of incident light at
The lower TiN film does not have to be etched to form a film, and the metal wiring for forming the lower TiN film only on the light incident portion on the metal wiring where the incident light is most likely to be reflected on the lower interface of the quartz substrate. Etching may also be performed on the part other than the part where the light enters. When the lower antireflection film is formed of a material having a low transmittance such as TiN, which is described as an example in the method for manufacturing a solid-state imaging device module to which the present invention is applied, the lower antireflection film is a solid-state imaging device. It is preferable to etch the part of the lower antireflection film where light is incident on the light receiving part of the solid-state imaging device so as not to interfere with the incidence of light on the light receiving part. In addition, since the incident light may be reflected at the interface of the lower part of the quartz substrate (excluding the part where the light is incident on the light receiving part of the solid-state image sensor) excluding the part where the light is incident on the metal wiring, the lower part of the quartz substrate is In order to form the lower anti-reflection film not only on the part of the interface where the incident light is reflected most easily on the metal wiring, but also on the part where the incident light may be reflected, It is preferable to perform etching only on the incident portion of light to the light receiving portion of the solid-state image sensor.

Then, as shown in FIG. 13C, the lower part T
Lower MgF by vapor deposition on the iN film _TwoForm a film.

Here, similarly to an example of the solid-state image pickup device module to which the present invention is applied, the lower transmission film reflects the incident light to the light-receiving portion of the solid-state image pickup device at the lower interface of the quartz substrate, so that the incident light to the light-receiving portion is changed. It is sufficient to prevent the inconvenience of not being effectively utilized, and it is not necessarily limited to the MgF ₂ film described above as an example as long as the incident light to the light receiving portion can be effectively utilized. Also, the lower Mg
It is sufficient if the F ₂ film is formed on the other surface of the quartz substrate so that the incident light to the light receiving portion of the solid-state imaging device can be effectively utilized, and it is not always necessary to form the F ₂ film by vapor deposition, and the lower MgF ₂ film can be used. Any method such as CVD may be used as long as the film can be formed on the other surface of the quartz substrate.

Next, as shown in FIG. 13D, the lower Mg
Etching is performed so that the F ₂ film is formed in the light incident portion of the light receiving portion of the solid-state image sensor.

Here, it is sufficient if the lower MgF ₂ film is formed on the other surface of the quartz substrate as described above so that the incident light to the light receiving portion of the solid-state image sensor can be effectively utilized. If it is possible to effectively utilize the incident light on the lower portion, the lower MgF _{2 is} entirely formed on the lower TiN film.
A film may be formed, and it is not always necessary to etch the lower MgF ₂ film.

The solid-state image sensor module to which the present invention is applied
In one example of a method of manufacturing a tool, after forming a lower TiN film,
Lower MgF_TwoThe film is formed, but the lower TiN film is a stone
It is possible to prevent reflection of incident light at the lower interface of the English substrate.
Is sufficient, lower MgF _TwoThe film is the light receiving of the solid-state image sensor
Prevents the inconvenience that the incident light on the part is not used effectively
It is sufficient to be able to
After forming the film, the lower MgF_TwoNo need to form a film
Lower MgF_TwoLower TiN film is formed after the film is formed
It doesn't matter.

Subsequently, as shown in FIG. 14, a SiN film 12 is formed on the lower TiN film by CVD.

Here, the SiN film is formed so as to function as an insulating layer when a conductive material such as TiN is used as the lower antireflection film, and may be a material which functions as an insulating layer. However, it is not necessarily limited to SiN, and may be TEOS, for example. Further, when the lower antireflection film is made of an insulating material such as MgF _2, it is not necessary to form the SiN film. In addition, SiN
It is sufficient for the film to function as an insulating layer by forming it on the lower TiN film as described above, and does not necessarily have to be formed by CVD. Similarly, it is sufficient for the SiN film to function as an insulating layer.
If the film can serve as an insulating layer, the SiN film may be formed on the entire upper portion of the lower TiN film as shown in FIG. It suffices to form a film, and as shown in FIG. 15, etching may be performed on a portion of the SiN film other than the portion where metal wiring is formed in the subsequent steps.

FIG. 16 is a schematic cross-sectional view for explaining the formation of metal wiring and the joining of the solid-state image pickup device in an example of the method for manufacturing a solid-state image pickup device to which the present invention is applied. In an example of the method for manufacturing a solid-state image sensor module to which the present invention is applied, the Al film 13 is formed on the SiN film by sputtering as shown in FIG.

Here, it is sufficient that the metal wiring can apply a voltage to the solid-state image pickup element, another semiconductor chip or a passive component (not shown) which is joined to the metal wiring as necessary, and is not always the above. It is not necessary to be limited to the Al film described as an example. It is sufficient that the Al film can be applied to the solid-state imaging device by forming the Al film on the SiN film, and it is not always necessary to form the Al film by sputtering, and the Al film is formed on the SiN film. Any method such as CVD, vapor deposition, and plating may be used as long as it is possible.

Subsequently, as shown in FIG. 16B, etching is performed on the Al film except for the portion where the metal wiring is to be formed to form a metal wiring, and the metal wiring and the solid-state image sensor are joined by the anisotropic conductive resin 14. At the same time, if necessary, another semiconductor chip, a passive component or the like (not shown) is bonded to form a solid-state image sensor module as shown in FIG.

In the solid-state imaging device module manufactured by the method for manufacturing a solid-state imaging device module to which the present invention is applied, the upper TiN film can prevent reflection of incident light at the upper interface of the quartz substrate, and the lower TiN film can prevent the quartz substrate from being reflected. By preventing reflection of incident light at the lower interface,
It is possible to prevent flare due to the incident light being reflected at the upper (lower) interface of the quartz substrate, and to suppress the occurrence of imaging defects. Further, it is possible to prevent the disadvantage that the incident light to reflect incident light in a quartz substrate upper surface by the upper MgF ₂ film light receiving portion is not effectively utilized, the incident light is reflected by a quartz substrate lower surface by the lower MgF ₂ film Since the inconvenience that the incident light on the light receiving portion is not effectively used can be prevented, the incident light on the light receiving portion can be effectively used, and the sensitivity of the solid-state imaging device module is improved.

In the example of the method for manufacturing the solid-state image pickup device module to which the present invention is applied, the upper TiN film and the lower TiN film are used.
The method for manufacturing the solid-state imaging device module including all of the N film, the upper MgF ₂ film, and the lower MgF ₂ film has been described as an example, but the upper TiN film, the lower TiN film, and the upper Mg are not necessarily required.
It is not necessary to form all the F ₂ film and the lower MgF ₂ film, and it is sufficient to form the upper TiN film and the like as necessary.

[0043]

As described above, according to the solid-state image pickup device module and the method for manufacturing the solid-state image pickup device module of the present invention, flare caused by reflection of incident light at the interface of the transparent substrate is prevented. You can

[Brief description of drawings]

FIG. 1 is a schematic cross-sectional view for explaining an example of a solid-state imaging device module to which the present invention has been applied.

FIG. 2 is a schematic cross-sectional view of a solid-state imaging device module in which an upper TiON film is formed on the entire upper surface of a glass substrate.

FIG. 3 is a schematic cross-sectional view for explaining a state in which incident light is reflected on the surface of a metal wiring.

FIG. 4 is a schematic cross-sectional view of a solid-state imaging device module in which a lower TiON film is formed on the entire lower portion of a glass substrate.

FIG. 5 is a schematic cross-sectional view of a solid-state imaging device module in which a lower TiON film is formed only in a light incident portion on a metal wiring in a lower portion of a glass substrate.

FIG. 6 is a schematic cross-sectional view for explaining a state where incident light is reflected at the upper interface of the glass substrate.

FIG. 7 is a schematic cross-sectional view of a solid-state imaging device module in which an upper MgF ₂ film is formed on the entire glass substrate upper part.

FIG. 8 shows an upper TiON film formed on a glass substrate,
FIG. 6 is a schematic cross-sectional view of a solid-state imaging device module in which an upper MgF ₂ film is formed on an upper TiON film.

FIG. 9 is a schematic cross-sectional view for explaining a state where incident light is reflected at the lower interface of the glass substrate.

FIG. 10 is a schematic cross-sectional view of a solid-state imaging device module in which a lower MgF ₂ film is formed on the entire lower portion of a glass substrate.

FIG. 11 is a schematic cross-sectional view of a solid-state imaging device module in which a lower TiON film is formed under a glass substrate and a lower MgF ₂ film is formed under the lower TiON film.

FIG. 12 is an upper TiN film and an upper MgF ₂ in an example of a method for manufacturing a solid-state image sensor module to which the present invention is applied.
It is a schematic cross section for explaining the method of forming a film.

FIG. 13 is a lower TiN film and a lower MgF ₂ in an example of a method for manufacturing a solid-state imaging device module to which the present invention is applied.
It is a schematic cross section for explaining the method of forming a film.

FIG. 14 is a schematic cross-sectional view of a solid-state imaging device module in which a SiN film is formed on a lower TiN film.

FIG. 15 is a schematic cross-sectional view of a solid-state imaging device module in which the portion of the SiN film shown in FIG. 14 other than the portion where metal wiring is formed is etched.

FIG. 16 is a schematic cross-sectional view for explaining the formation of metal wiring and the joining of the solid-state imaging device in the example of the method for manufacturing the solid-state imaging device module to which the present invention is applied.

FIG. 17 is a schematic cross-sectional view for explaining a conventional solid-state imaging device module.

FIG. 18 is a diagram (1) for explaining a flare generation mechanism in a conventional solid-state imaging device module.

FIG. 19 is a diagram (2) for explaining a flare generation mechanism in the conventional solid-state imaging device module.

FIG. 20 is a diagram (3) for explaining a flare generation mechanism in the conventional solid-state imaging device module.

[Explanation of symbols]

1 Solid-State Imaging Device Module 2 Glass Substrate 3 Solid-State Imaging Device 4 Metal Wiring 5 Upper TiON Film 6 Lower TiON Film 7 Upper MgF ₂ Film 8 Lower MgF ₂ Film 9 Quartz Substrate 10 Upper TiN Film 11 Lower TiN Film 12 SiN Film 13 Al Film 14 Anisotropic conductive resin

Claims (8)

[Claims] 1. A solid-state imaging device, comprising: a translucent substrate; a solid-state imaging device integrally fixed to the translucent substrate; and a light receiving section for receiving light transmitted through the translucent substrate; In a solid-state image sensor module, which is arranged on the side of the substrate on the side of the solid-state image sensor and includes a metal wiring that connects the solid-state image sensor to another circuit, the translucent substrate and / or the metal to the solid-state image sensor. A solid-state imaging device module, comprising: an antireflection film provided on the translucent substrate to suppress incidence of reflected light by wiring. 2. The solid-state imaging device module according to claim 1, wherein the antireflection film is provided on at least a light incident portion of the light transmissive substrate to the metal wiring. 3. The solid-state imaging device module according to claim 1, wherein the antireflection film is provided on the translucent substrate except for a light incident part on a light receiving part of the solid-state imaging device. 4. A light-transmitting film for suppressing reflection of incident light to the light-receiving portion of the solid-state image sensor is provided at least in the light-incident portion of the light-transmitting substrate to the light-receiving portion of the solid-state image sensor. The solid-state image sensor module according to claim 1, claim 2, or claim 3. 5. A solid-state image sensor having a light-transmissive substrate, a light-receiving unit integrally fixed to the light-transmissive substrate, and receiving light transmitted through the light-transmissive substrate, and the light-transmissive substrate. A method for manufacturing a solid-state image sensor module, comprising: a metal wiring that is arranged on the side of the solid-state image sensor on a substrate and that connects the solid-state image sensor to another circuit. A step of providing an antireflection film for suppressing incidence of reflected light by the translucent substrate and / or the metal wiring; a step of providing the metal wiring on the antireflection film; and a step of joining the metal wiring and the solid-state imaging device And a method for manufacturing a solid-state image sensor module. 6. The method for manufacturing a solid-state imaging device module according to claim 5, wherein the antireflection film is provided at least in a light incident portion of the light transmissive substrate to the metal wiring. 7. The method for manufacturing a solid-state imaging device module according to claim 5, wherein the antireflection film is provided on the translucent substrate except for a light incident portion on a light receiving portion of the solid-state imaging device. 8. A step of providing a transmissive film for suppressing reflection of incident light to a light receiving section of the solid-state image sensor at least on a light incident section of the light-transmitting substrate to the light receiving section of the solid-state image sensor. 5. A method for manufacturing a solid-state image sensor module according to claim 5, claim 6, or claim 7.