TWI807248B - Concentrating structure with enhanced photosensitive effect - Google Patents

Abstract

The invention provides a light-gathering structure with enhanced light-sensitivity effect, which includes: a substrate, a buried layer, a first electrode layer, a second electrode layer, a dielectric layer and an interconnection structure. The substrate is provided with an accommodating space, the buried layer is arranged above the substrate and arranged in the accommodating space, the first electrode layer ring is arranged on the buried layer, the second electrode layer is arranged in the middle of the first electrode layer, the dielectric layer is arranged above the second electrode layer, the internal connection structure is arranged above the substrate and the first electrode layer and arranged in the dielectric layer, and an opening is formed to form a light-gathering groove.

Description

Concentrating structure with enhanced photosensitive effect

The invention is applied to a light-gathering structure, especially a light-gathering structure with enhanced light-sensing effect.

The photosensitive element (Image Sensor) is a semiconductor, and its photosensitive element (Image Sensor) is not only used in general household appliances such as smart phones and digital cameras, but also used in car cameras and surveillance cameras.

Photosensitive element (Image Sensor) is a device that converts light signals into analog signals. The analog signal output by the photosensitive element is transmitted to the photosensitive element processor (Image Signal Processor) for analog/digital conversion (A/D conversion) and color adjustment, and then becomes digital image information. The photosensitive element (Image Sensor) converts the light and darkness of the camera lens into electronic signals, and through the photosensitive element (Image Sensor), the light entering the camera is presented as an image. The photosensitive element is one of the key components of digital cameras, network surveillance cameras and other imaging equipment. Currently, the more commonly used types are "CCD, Charge Coupled Device" or "Complementary Metal-Oxide Semiconductor" (CMOS, Complementary Metal-Oxide Semiconductor).

Charge Coupled Device (CCD) is an integrated circuit, a device based on analog signals. When the light signal is projected onto its surface, a charge signal is generated, the charge signal is converted into a voltage, and the picture image signal is output according to the specified timing, and other circuits on the main board convert the charge signal into a digital signal for processing by the processor.

Complementary Metal-Oxide Semiconductor (CMOS, Complementary Metal-Oxide Semiconductor) is also an integrated circuit that can produce the basic components of PMOS (P-channel MOSFET) and NMOS (n-type MOSFET) on silicon wafers. Since PMOS (P-channel MOSFET) and NMOS (n-type MOSFET) are complementary in characteristics, they are called CMOS.

Today, complementary metal oxide semiconductor (CMOS, Complementary Metal-Oxide Semiconductor) is also often used as a photosensitive element of digital imaging equipment, also known as an active pixel sensor (Active Pixel Sensor). Near each photoelectric sensor is a corresponding circuit that directly converts light energy into a voltage signal. Complementary Metal-Oxide Semiconductor (CMOS, Complementary Metal-Oxide Semiconductor) differs from Charge Coupled Device (CCD, Charge Coupled Device) in that Complementary Metal-Oxide Semiconductor (CMOS, Complementary Metal-Oxide Semiconductor) does not involve charge signals.

The two sensors, Charge Coupled Device (CCD) and Complementary Metal-Oxide Semiconductor (CMOS), each have advantages and disadvantages. The image quality of CCD (Charge Coupled Device) is better than that of Complementary Metal-Oxide Semiconductor (CMOS, Complementary Metal-Oxide Semiconductor), but Complementary Metal-Oxide Semiconductor (CMOS, Complementary Metal-Oxide Semiconductor) has the advantages of low cost, low power consumption, fast data transmission speed and high integration. With the advancement of technology, in recent years, the industry has developed a complementary metal oxide semiconductor (CMOS, Complementary Metal-Oxide Semiconductor) photosensitive element that can match the image quality of a charge coupled device (CCD, Charge Coupled Device). Coupled Device) to Complementary Metal-Oxide Semiconductor (CMOS, Complementary Metal-Oxide Semiconductor).

Complementary Metal-Oxide Semiconductor (CMOS, Complementary Metal-Oxide Semiconductor) can be used to make computer static random access memory, controllers, processors and other digital logic circuit systems. synonymous.

Complementary Metal-Oxide Semiconductor (CMOS, Complementary Metal-Oxide Semiconductor) can be installed in a digital camera. The digital camera is a camera that uses a photosensitive coupling element or a complementary metal-oxide semiconductor sensor to replace the chemical photosensitive function of the traditional camera film. Unlike traditional cameras, which record images through chemical changes on the film caused by light, the main components of the digital camera include photosensitive elements, darkrooms, photosensitive media and control structures.

Continuing from the above, the darkroom connects its lens to the photosensitive medium, thereby protecting the photosensitive medium and ensuring that the photosensitive medium will not be disturbed by external light during the imaging process.

Continuing from the above, the photosensitive medium is responsible for capturing and recording images.

Continuing from the above, the control structure can control or change the way of capturing and recording images and the final imaging effect of the images.

Continuing from the above, the photosensitive element is usually a lens group made of optical glass, called a lens.

The light sensor is a single module that integrates the complex procedures and functions of the aforementioned light sensing element, micro-lens light-condensing structure, filter, light-reading circuit, and signal processing. components, resulting in an increase in the overall thickness of the conventional photoreceptor, the industry is still looking for a design to further reduce the thickness of the conventional photoreceptor, which is still an urgent problem to be solved in the industry.

In view of the above-mentioned problems in the prior art, the present invention provides a light-condensing structure with enhanced light-sensing effect, which combines the interconnection structure with the light-condensing element, further eliminates the light-condensing element, and reduces the thickness of the photoreceptor.

One object of the present invention is to provide a light-gathering structure with an enhanced light-sensing effect. An opening is formed through an interconnection structure to form a light-gathering groove. The interconnection structure is combined with a light-gathering element to further eliminate the light-gathering element and reduce the thickness of the photosensitive element.

In order to achieve the above-mentioned purposes and effects, the present invention provides a light-gathering structure with enhanced light-sensing effect. The interconnection structure is arranged on the substrate and the first electrode layer and surrounded by the dielectric layer, and forms an opening to form a light-gathering groove; this structure eliminates the setting of light-gathering elements and reduces the thickness of the overall photosensitive element.

In an embodiment of the present invention, the interconnection structure further includes at least one first conductive layer, the at least one first conductive layer is disposed on the substrate and the first electrode layer and surrounds the dielectric layer, and the first conductive layer is coupled to the dielectric layer.

In an embodiment of the present invention, the interconnection structure further includes at least one second conductive layer, and the at least one second conductive layer is disposed on one of the first conductive layers to form at least one light concentrating opening.

In an embodiment of the present invention, the interconnection structure further includes at least one second conductive layer disposed on one of the first conductive layers to form at least one opening.

In an embodiment of the present invention, the interconnection structure further includes a first insulating layer covering the at least one first conductive layer.

In an embodiment of the present invention, the interconnection structure further includes a second insulating layer covering the at least one second conductive layer.

In an embodiment of the present invention, in the interconnection structure, a conductive element is disposed between the at least one first conductive layer and the at least one second conductive layer, and the conductive element is respectively coupled to the at least one first conductive layer and the at least one second conductive layer.

1: Concentrating structure with enhanced photosensitive effect

10: Substrate

11:Accommodating space

20: buried layer

30: the first electrode

40: Second electrode

50: dielectric layer

60: Inner connection structure

61: The first conductive layer

62: The first insulating layer

63: Second conductive layer

63-1: Concentrating opening

64: Second insulating layer

65: Conductive parts

66: opening

67: Concentrating groove

L1: first ray

L2: second ray

L3: third ray

L4: fourth ray

L5: fifth ray

Fig. 1: it is a schematic structural view of an embodiment of the present invention; Fig. 2A: it is a schematic diagram of an optical path of an embodiment of the present invention; Fig. 2B: it is a schematic diagram of an optical path of an embodiment of the present invention; Fig. 2C: it is a schematic diagram of an optical path of an embodiment of the present invention; Fig. 2D: it is a schematic diagram of an optical path of an embodiment of the present invention;

In order to enable your examiners to have a further understanding and understanding of the features and the achieved effects of the present invention, the examples and accompanying descriptions are hereby provided as follows: the present invention provides a light-concentrating structure with enhanced light-sensing effect, the interconnect structure is arranged on the substrate and the first electrode layer and surrounded by the dielectric layer, and an opening is formed to form a light-concentrating groove; this structure eliminates the setting of light-concentrating elements and reduces the thickness of the overall photosensor.

Please refer to Figure 1, which is a schematic structural diagram of an embodiment of the present invention. As shown in the figure, this embodiment provides a light-gathering structure with enhanced light-sensing effect, which includes: a base board 10 , a buried layer 20 , a first electrode layer 30 , a second electrode layer 40 , a dielectric layer 50 and an interconnect structure 60 .

Referring to FIG. 1 again, as shown in the figure, in this embodiment, the substrate 10 is provided with an accommodating space 11, the buried layer 20 is arranged above the substrate 10 and arranged in the accommodating space 11, the first electrode layer 30 is arranged around the buried layer 20, the second electrode layer 40 is arranged in the middle of the first electrode layer 30, the dielectric layer 50 is arranged above the second electrode layer 40, and the interconnection structure 60 is arranged above the substrate 10 and the first electrode layer 30 and arranged around it. The dielectric layer 50 is formed, and the opening 66 is formed to form the light concentrating groove 67 .

Continuing the above, as shown in the figure, in this embodiment, the interconnection structure 60 further includes at least one first conductive layer 61 and at least one second conductive layer 63. The at least one first conductive layer 61 is disposed on the substrate 10 and the first electrode layer 30 and surrounds the dielectric layer 50. The first conductive layer 61 is coupled to the first electrode layer 30, the second electrode layer 40 and the dielectric layer 50. At least one light-gathering opening 63-1.

Continuing the above, as shown in the figure, in this embodiment, the interconnection structure 60 further includes at least one first insulating layer 62 and at least one second insulating layer 64, the at least one first insulating layer 62 is covered on the at least one first conductive layer 61, and the at least one second insulating layer 64 is covered on the at least one second conductive layer 63.

Continuing the above, as shown in the figure, in this embodiment, a conductive element 65 is disposed between the at least one first conductive layer 61 and the at least one second conductive layer 63, and the conductive element 65 is respectively coupled to the at least one first conductive layer 61 and the at least one second conductive layer 63.

Please refer to FIG. 1, and also refer to FIG. 2A, which is a schematic diagram of the light path of an embodiment of the present invention. As shown in the figure, in this embodiment, the light-gathering structure 1 with enhanced light sensitivity emits a first light L1, and the first light L1 hits the first conductive layer 61. The first The conductive layer 61 reflects the first light L1 to the dielectric layer 50 and radiates to the first electrode layer 30 .

Please refer to FIG. 1 , and also refer to FIG. 2B , which is a schematic diagram of the light path of an embodiment of the present invention. As shown in the figure, in this embodiment, the light-gathering structure 1 with an enhanced photosensitive effect emits a second light L2, and the second light L2 hits the second conductive layer 63 , and the second conductive layer 63 reflects the second light L2 to the dielectric layer 50 , and then hits the first electrode layer 30 .

Please refer to FIG. 1, and also refer to FIG. 2C, which is a schematic view of the light path of an embodiment of the present invention. As shown in the figure, in this embodiment, the light-gathering structure 1 with enhanced photosensitivity emits a third light L3, and the third light L3 hits the first conductive layer 61. The first conductive layer 61 reflects the third light L3 to the corresponding first conductive layer 61.

Please refer to FIG. 1, and also refer to FIG. 2D, which is a schematic view of the light path of the embodiment of the present invention. As shown in the figure, in this embodiment, the light-gathering structure 1 with enhanced photosensitivity emits a fourth light L4, and the fourth light L4 hits the second conductive layer 63.

Please refer to FIG. 1, and also refer to FIG. 2E, which is a schematic view of the light path of an embodiment of the present invention. As shown in the figure, in this embodiment, the light-gathering structure 1 with an enhanced photosensitive effect emits a fifth light L5, and the fifth light L5 hits the conductive member 65, and the conductive member 65 reflects the fifth light L5 to the dielectric layer 50, and then hits the first electrode layer 30.

This embodiment is a light concentrating structure with enhanced photosensitive effect, which includes: the substrate 10, the buried layer 20, the first electrode layer 30, the second electrode layer 40, the dielectric layer 50 and the interconnection structure 60. The buried layer 20 in this embodiment is a layer of impurities with a low resistivity, which is embedded in the substrate 10 and under the second electrode layer 40. The buried layer 20 is used to reduce series resistance. The light concentrating groove 67 reflects and gathers the light to the first electrode layer 30 and the second electrode layer 40. The first electrode layer 30 is a P-type semiconductor, which is doped with a small amount of boron or indium in the silicon crystal or germanium crystal of the P-type semiconductor. In silicon crystal or germanium crystal, when silicon crystal is doped with a large number of pentavalent atoms, in the covalent bond structure, one of the valence electrons of the pentavalent atoms is more likely to become a free electron, so that the N-type semiconductor can become a semiconductor with more free electrons. The light-gathering groove 67 of the wire structure 60 can gather a small amount or weak light to the light-gathering groove 67, and the light-gathering groove 67 allows the first electrode layer 30 and the second electrode layer 40 to receive more light. For example, this embodiment can be used in a photosensitive element of a digital camera to further improve its shooting effect when shooting at night.

Continuing from the above, in this embodiment, the substrate 10 is used to support the upper interconnection structure 60 and the dielectric layer 50. The dielectric layer 50 can be used as a protective layer on the surface of the semiconductor element, such as the first electrode layer 30 and the second electrode layer 40 of this embodiment. The interconnection structure 60 is arranged around the dielectric layer 50, and the opening 66 is formed to form the light-gathering groove 67; this structure eliminates the setting of the light-gathering element and reduces the thickness of the overall photosensitive element.

To sum up, the present invention provides a light-sensing structure with an enhanced light-sensing effect. An opening is formed through the interconnect structure to form a light-condensing groove. The interconnect structure is combined with a light-condensing element to further eliminate the light-condensing element and reduce the thickness of the photoreceptor, so as to solve the problem that the current light sensor needs to be equipped with a light-condensing element, resulting in an increase in the overall thickness of the conventional light sensor.

Therefore, the present invention is novel, progressive and can be used in the industry. It should meet the patent application requirements of my country's patent law. I file an invention patent application in accordance with the law. I pray that the bureau will grant the patent as soon as possible. I am sincerely praying.

But what is described above is only an embodiment of the present invention, and is not used to limit the scope of the present invention. Therefore, all equal changes and modifications made according to the shape, structure, characteristics and spirit described in the scope of the patent application of the present invention should be included in the scope of the patent application of the present invention.

1: Concentrating structure with enhanced photosensitive effect

10: Substrate

11:Accommodating space

20: buried layer

30: the first electrode

40: Second electrode

50: dielectric layer

60: Inner connection structure

61: The first conductive layer

62: The first insulating layer

63: Second conductive layer

63-1: Concentrating opening

64: Second insulating layer

65: Conductive parts

66: opening

67: Concentrating groove

Claims (3)

A light concentrating structure with enhanced photosensitive effect, comprising: a substrate with an accommodation space; a buried layer disposed above one of the substrates and disposed in the accommodation space; a first electrode layer disposed on the buried layer and coupled to the buried layer; a second electrode layer disposed in the middle of the first electrode layer and disposed above one of the buried layers; a dielectric layer disposed above one of the second electrode layers; , and form an opening to form a light-gathering groove, wherein the interconnection structure includes at least one first conductive layer, a conductive member, and at least one second conductive layer; the at least one first conductive layer is disposed on the substrate and the first electrode layer and surrounds the dielectric layer; the at least one second conductive layer is disposed on one of the first conductive layers to form at least one light-gathering opening; . The light concentrating structure with enhanced photosensitivity according to Claim 1 further includes: a first insulating layer covering the at least one first conductive layer. The light concentrating structure with enhanced photosensitivity according to Claim 1 further comprises: a second insulating layer covering the at least one second conductive layer.

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