JP2003258048A - Method for detecting electric foreign matter and semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method for detecting an electric foreign matter in which whether the matter such as particles or the like exists in a semiconductor manufacturing apparatus or not is rapidly accurately detected, and to provide a semiconductor device. <P>SOLUTION: The method for detecting the electric foreign matter comprises a step of forming needle contact parts 12a, 13a on an insulating film 11; a step of forming a conductive film on the contact and the film; a step of forming a resist pattern 14 having a pattern corresponding to second wiring 13 connected to the pattern, and the contact 13a corresponding to first wiring 12 connected to the contact 12a having opening patterns 14a, 14b above the parts 12a, 13a; a step of forming the wirings 12, 13 on the film 11 by etching the film with the resist pattern used as a mask; and a step of detecting the electric foreign matter by bringing the needle for measuring electric resistance into contact with the exposed contact. <P>COPYRIGHT: (C)2003,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electric foreign matter detecting method and a semiconductor device. In particular, the present invention relates to a method for detecting electrical foreign matter and a semiconductor device capable of accurately and quickly detecting whether foreign matter such as particles is present in a semiconductor manufacturing apparatus.

[0002]

2. Description of the Related Art FIGS. 3 and 4 are views for explaining a conventional electric foreign matter detecting method. This electrical foreign matter detection is carried out periodically using a monitor wafer, and the presence or absence of particles in a chamber (eg, etching chamber) of a semiconductor manufacturing apparatus (eg, etching apparatus) is investigated.

FIG. 3A is a plan view showing a process before the conventional detection of an electric foreign matter, and FIG. 3B is a plan view.
3B is a cross-sectional view taken along line 3b-3b shown in FIG.
FIG. 3C is a sectional view taken along the line 3c-3c shown in FIG. FIG. 4A is a plan view showing a step of performing conventional electrical foreign matter detection, and FIG. 4B is a sectional view taken along line 4b-4b shown in FIG. 4 (c)
FIG. 4C is a sectional view taken along line 4c-4c shown in FIG.

As shown in FIG. 3, an insulating film 111 is formed above a silicon substrate (not shown), and the insulating film 111 is formed.
A conductive film such as an Al alloy film or a polysilicon film is deposited on the entire surface of. Next, a photoresist film is applied on the conductive film, and the photoresist film is exposed and developed to form a resist pattern 114 on the conductive film. As shown in FIG. 3A, the resist pattern 114 has a plane formed in a shape of two comb teeth, and is positioned such that the two comb teeth are engaged with each other with a space therebetween so as not to contact each other. . This interval can be freely set depending on the size of the foreign matter in question. Here, there is a foreign substance 115 that comes into contact with the two comb-shaped resist patterns.

Then, the conductive film is etched using the resist pattern 114 as a mask to form wirings 112 and 113 made of a conductive film on the insulating film 111. Although the wirings 112 and 113 have two comb-shaped planar shapes, the foreign material 115 serves as an etching mask, so that the conductive film below the foreign material 115 remains after etching. Therefore, the two comb-shaped wirings 11
2, 113 are in contact with each other under the foreign matter.

Next, as shown in FIG. 4, the resist pattern 114 is removed. As a result, the comb-shaped wiring 112
The needle contact portion 112a for measuring the electric resistance is exposed on the wire, and the needle contact portion 113a for measuring the electric resistance is formed on the comb-shaped wiring 113.
Is exposed.

Next, electrical foreign matter is detected. That is, a needle for measuring electrical resistance is brought into contact with the needle contact portion 112a of the wiring 112 and the needle contact portion 113a of the wiring 113, and the electrical resistance between the needle contact portion 112a and the needle contact portion 113a is measured. When the measurement result that the needle contact portions are electrically short-circuited with each other is obtained, the wiring 11
If it is determined that a foreign substance has been detected between the wire 2 and the wiring 113, and a measurement result that the needle contact portions are not electrically short-circuited, it is determined that a foreign substance has not been detected. In the case shown in FIG. 4, foreign matter is detected.

[0008]

By the way, in the above-mentioned conventional electric foreign matter detecting method, the electric resistance is measured after the resist pattern 114 is peeled off.
As shown in (4), the foreign matter may be removed while the resist pattern is peeled off. In such a case, since it is not possible to visually confirm the foreign matter with a microscope after it is determined that the foreign matter is detected, whether the cause of the short circuit is due to the foreign matter or another cause of the short circuit. But I don't know for sure. Therefore, it is difficult to accurately detect a foreign substance with this method.

Further, since the above-mentioned electrical foreign matter detecting method requires the step of peeling the resist pattern 114,
The peeling process takes time. Therefore, there is a demand for shortening the time required to detect an electrical foreign matter, and this peeling process becomes an obstacle to this demand.

The present invention has been made in consideration of the above circumstances, and an object thereof is to provide an electrical foreign matter capable of promptly and accurately detecting whether foreign matter such as particles exists in a semiconductor manufacturing apparatus. It is to provide a detection method and a semiconductor device.

[0011]

In order to solve the above-mentioned problems, the method for detecting an electric foreign matter according to the present invention is a step of forming a first contact electrode and a second contact electrode made of a first conductive film on an insulating film. A step of forming a second conductive film on the first contact electrode, the second contact electrode and the insulating film; and an opening pattern on the second conductive film above the first contact electrode and the second contact electrode, respectively. Having the following first connected to the first contact electrode
Forming a resist pattern having a first pattern corresponding to the wiring and a second pattern corresponding to the following second wiring connected to the second contact electrode, and etching the second conductive film using the resist pattern as a mask A step of forming a first wiring connected to the first contact electrode and a second wiring connected to the second contact electrode on the insulating film, and the exposed first contact electrode and second contact electrode A step of bringing a needle for measuring electrical resistance into contact with each of them and measuring the electrical resistance between them.

According to the above-mentioned method for detecting electrical foreign matter, since the resist pattern has the opening pattern, the second conductive film is etched to form the first wiring and the second wiring, and the first contact electrode and The second contact electrode can be exposed. Therefore, even if the resist pattern is not peeled off, the electric resistance measuring needle can be brought into contact with the first contact electrode and the second contact electrode, and the electric foreign matter can be detected. Therefore, the foreign matter is not removed by peeling the resist pattern before the electrical foreign matter is detected. Further, since the step of peeling the resist pattern before performing the electric foreign matter detection is unnecessary, the time required for the peeling step becomes unnecessary, and the time required for the electric foreign matter detection can be shortened.

Further, in the electrical foreign matter detecting method according to the present invention, each of the first pattern and the second pattern is a comb-shaped pattern, and the first pattern and the second pattern are meshed with each other without contacting each other. It is preferably arranged in. The distance between the first pattern and the second pattern is 0.1 μm or less when a minute foreign substance having a size of 0.1 μm is targeted, and the regular foreign substance having a size of 0.1 μm or more is targeted. 0.1 μm
It is preferable to set the above, and the interval can be set as required.

Further, in the electrical foreign matter detecting method according to the present invention, in the measuring step, the foreign matter is detected when the result of measuring the electric resistance is lower than a predetermined value and the electrical short is made. It is preferable to include a step of determining that the foreign matter is not detected when the result of measuring the electrical resistance is higher than a predetermined value and there is no electrical short circuit.

Further, in the electrical foreign matter detecting method according to the present invention, the thickness of the first conductive film may be thicker than the thickness of the second conductive film. Thus, when the second conductive film is etched using the resist pattern as a mask, even if overetching is performed, the first contact electrode and the second contact electrode can be left without being completely removed by etching.

Further, in the electrical foreign matter detecting method according to the present invention, the first conductive film and the second conductive film may be a film made of metal or polysilicon or a composite film thereof.

In the semiconductor device according to the present invention, the first contact electrode and the second contact electrode made of the first conductive film are formed on the insulating film, and the semiconductor device is formed on the insulating film and connected to the first contact electrode. A second wiring formed of a second conductive film and a second conductive film formed on the insulating film and connected to the second contact electrode.
A semiconductor device comprising: a wiring, wherein the first contact electrode and the second contact electrode are each brought into contact with a needle for measuring electrical resistance, and the electrical resistance between them is measured.

In the semiconductor device according to the present invention,
The first wiring and the second wiring each have a comb-shaped pattern, and the first wiring and the second wiring may be arranged so as to mesh with each other without making contact with each other. . By making the distance between the first wiring and the second wiring small, it is possible to detect from a minute foreign substance to a large foreign substance. Also, by increasing the interval, it is possible to detect a large foreign matter.

[0019]

BEST MODE FOR CARRYING OUT THE INVENTION An embodiment of the present invention will be described below with reference to the drawings. 1 and 2 are views for explaining an electric foreign matter detection method according to an embodiment of the present invention. This electrical foreign matter detection is carried out periodically using a monitor wafer, and the presence or absence of particles in a chamber (eg, etching chamber) of a semiconductor manufacturing apparatus (eg, etching apparatus) is investigated.

FIG. 1A is a plan view showing a process before the detection of an electric foreign matter according to the embodiment of the present invention, and FIG. 1B is a plan view of 1b-1b shown in FIG. 1A. It is sectional drawing which followed the line, FIG.1 (c) shows 1c-1 shown in FIG.1 (a).
It is sectional drawing along the c line. FIG. 2A is a plan view showing a step of performing electrical foreign matter detection according to the embodiment of the present invention, and FIG. 2B is a cross section taken along line 2b-2b shown in FIG. 2A. FIG. 2C is a cross-sectional view taken along line 2c-2c shown in FIG.

As shown in FIG. 1, an insulating film 11 such as a silicon oxide film is formed on a silicon substrate (not shown) by CVD.
It is formed by a (Chemical Vapor Deposition) method or a thermal oxidation method. Then, a first conductive film such as an Al alloy film, a polysilicon film, or a composite film thereof is deposited on the entire surface of the insulating film 11 by sputtering or CVD.

Next, a photoresist film (not shown) is applied on the first conductive film, and the photoresist film is exposed to light,
By developing, a resist pattern is formed on the first conductive film. Next, by etching the first conductive film using this resist pattern as a mask, the needle contact portions (contact electrodes) 12a, 13a with which the needle for measuring the electrical resistance is brought into contact when the electrical foreign matter detection described later is performed are insulating films. 11 is formed. In addition, the needle contact portions 12a and 13a
Is a first conductive film.

After removing the resist pattern, the second conductive film 10 such as an Al alloy film or a polysilicon film is formed on the entire surface including the needle contact portions 12a and 13a and the insulating film 11.
Are deposited by sputtering or CVD.

Next, a photoresist film 14 is applied on the second conductive film 10, and the photoresist film is exposed and developed to form a resist pattern 14 on the second conductive film 10. As shown in FIG. 1A, the resist pattern 14 is formed into two comb teeth in a plan view, and is positioned so that the two comb teeth are engaged with each other with a space therebetween so as not to contact each other. There is. This interval can be freely set depending on the size of the foreign matter in question. At the same time, the resist pattern 14 is an opening pattern 14 having openings above the needle contact portions 12a and 13a.
a and 14b. The opening pattern 14a is located above the needle contact portion 12a, and the opening pattern 14b is located above the needle contact portion 13a. Here, there is a foreign substance 15 that is in contact with the two comb-teeth-shaped resist patterns.

After that, the second conductive film 10 is etched by using the resist pattern 14 as a mask. As a result, as shown in FIG. 2, the second conductive film 1 is formed on the insulating film 11.
The wirings 12 and 13 of 0 are formed and the wiring 1
The needle contact portion 12a is formed at the end of the wire 2, the needle contact portion 13a is formed at the end of the wiring 13, and the needle contact portion 12a,
13a is exposed from the opening patterns 14a and 14b.

At this time, the needle contact portions 12a and 13a are thinned by the overetching of the second conductive film 10, but the initial thickness of the needle contact portions 12a and 13a is equal to the thickness of the second conductive film 10. Since it is formed thicker (for example, about twice as thick) as a result, the thickness of the needle contact portion and the thickness of the wiring are eventually the same. However, regarding how much the initial thickness of the needle contact portion is made larger than that of the second conductive film 10,
It is also possible to change it appropriately depending on the amount of overetching. Further, the wirings 12 and 13 have two comb-shaped planar shapes, but the foreign material 15 serves as an etching mask, so that the conductive film below the foreign material 15 remains after etching. Therefore, the two comb-shaped wirings 12, 1
3 is connected to each other under the foreign matter.

Next, electrical foreign matter is detected. That is, the needle contact portion 12a of the wiring 12 and the needle contact portion 1 of the wiring 13
An electric resistance measuring needle is brought into contact with 3a, and the electric resistance between them is measured. When the measurement result that the needle contact portions are electrically short-circuited is obtained, it is determined that the foreign matter is detected between the wiring 12 and the wiring 13, and the needle contact portions are electrically disconnected from each other. When the measurement result that there is no electrical short circuit is obtained, it is determined that the foreign matter is not detected. In the case shown in FIG. 2, foreign matter is detected.

According to the above embodiment, since the opening patterns 14a and 14b are formed in the resist pattern 14, the conductive film 10 is etched to form the wiring 12,
At the same time as forming 13, the needle contact portions 12a and 13a can be exposed. Therefore, the resist pattern 14
Even if you do not peel off the
It is possible to make contact with a and 13a, and it is possible to detect electrical foreign matter. Therefore, since the foreign matter is not removed by peeling the resist pattern 14 before performing the electrical foreign matter detection, it is possible to visually confirm the foreign matter with a microscope after it is determined that the foreign matter is detected. Become. Therefore, it is possible to clearly determine whether or not the cause of the short circuit is due to the foreign matter.

Further, in the present embodiment, the step of peeling the resist pattern 14 before the detection of the electric foreign matter is unnecessary, so that the time required for the peeling step is unnecessary. Therefore, it is possible to shorten the time required to detect the electric foreign matter, and to know the result of the presence or absence of particles in the etching apparatus in a short time.

The present invention is not limited to the above embodiment, and can be implemented with various modifications. For example,
In the above embodiment, the two wirings 12 and 13 are formed in a comb shape, but the shape is not limited to this.
The wiring may have another shape as long as it has a pattern shape capable of detecting foreign matter.

Further, in the above-mentioned embodiment, the electric foreign matter is detected periodically by using the monitor wafer, but the present invention is not limited to this, and the electric foreign matter is detected by using the product wafer which is not the monitor wafer. Detection may be performed, or electrical foreign matter detection may be performed using a product chip. If a product wafer is used, wiring on the product wafer 1
2 and 13 are left, and when the product chip is used, the wirings 12 and 13 are left on the product chip.

That is, this product wafer or product chip has a needle contact portion (first contact electrode) 12a and a needle contact portion (second contact electrode) 13a formed on the insulating film 11 and formed of the first conductive film. , The needle contact portion 1 formed on the insulating film 11
The wiring (first wiring) 12 made of the second conductive film 10 connected to 2a and the needle contact portion 13a formed on the insulating film 11.
Wiring formed of the second conductive film 10 connected to the second wiring (second wiring)
A needle contact portion 12
The electric resistance measurement needles are brought into contact with a and the needle contact portion 13a, respectively, and the electric resistance between them is measured.

[0033]

As described above, according to the present invention, it is possible to provide an electrical foreign matter detecting method and a semiconductor device capable of quickly and accurately detecting whether foreign matter such as particles exists in a semiconductor manufacturing apparatus. You can

[Brief description of drawings]

FIG. 1 (a) is a plan view showing a process before detecting an electric foreign matter according to an embodiment of the present invention, and FIG.
It is sectional drawing which followed the 1b-1b line shown to (a),
(C) is a sectional view taken along line 1c-1c shown in (a).

FIG. 2A is a plan view showing a process of detecting an electric foreign matter according to the embodiment of the present invention, and FIG.
It is sectional drawing which followed the 2b-2b line shown to (a),
(C) is a sectional view taken along the line 2c-2c shown in (a).

FIG. 3A is a plan view showing a process before the conventional detection of an electric foreign matter, and FIG. 3B is a plan view of 3b- shown in FIG.
It is sectional drawing which followed the 3b line, (c) is sectional drawing which followed the 3c-3c line shown to (a).

FIG. 4A is a plan view showing a conventional process for detecting an electric foreign matter, and FIG. 4B is a plan view of 4b-4b shown in FIG.
It is sectional drawing which followed the line, (c) is 4c shown to (a).
FIG. 4C is a sectional view taken along the line -4c.

[Explanation of symbols]

10 ... Second conductive film 11, 111 ... Insulating film 12, 13, 112, 113 ... Wirings 12a, 13a, 112a, 113a ... Needle contact portion (contact electrode) for measuring electric resistance 14, 114 ... Resist patterns 14a, 14b … Aperture patterns 15, 115… foreign matter

Claims (9)

[Claims] 1. A step of forming a first contact electrode and a second contact electrode made of a first conductive film on an insulating film, and a second conductive film on the first contact electrode, the second contact electrode and the insulating film. A step of forming, and a first pattern and a first pattern corresponding to the following first wiring connected to the first contact electrode and having an opening pattern above each of the first contact electrode and the second contact electrode on the second conductive film. A step of forming a resist pattern having a second pattern corresponding to the following second wiring connected to the second contact electrode, and etching the second conductive film using this resist pattern as a mask to form a first pattern on the insulating film. Forming a first wire connected to the contact electrode and forming a second wire connected to the second contact electrode; and a needle for measuring electrical resistance on each of the exposed first contact electrode and second contact electrode. Contact Electrical foreign object detection method characterized by comprising the steps of measuring during the electric resistance. 2. The first pattern and the second pattern are comb-teeth patterns, and the first pattern and the second pattern are arranged so as to mesh with each other without coming into contact with each other. The electrical foreign matter detection method according to claim 1. 3. In the measuring step, if the result of measuring the electric resistance is lower than a predetermined value and an electrical short occurs, it is determined that a foreign substance is detected, and the result of measuring the electric resistance is The electrical foreign matter detecting method according to claim 1 or 2, further comprising a step of determining that a foreign matter has not been detected when the value is higher than a predetermined value and is not electrically short-circuited. 4. The electrical foreign matter detecting method according to claim 1, wherein the thickness of the first conductive film is thicker than the thickness of the second conductive film. 5. The electrical film according to claim 1, wherein the first conductive film and the second conductive film are films made of metal or polysilicon or a composite film thereof. Foreign matter detection method. 6. A first contact electrode and a second contact electrode made of a first conductive film formed on an insulating film, and a second conductive film formed on the insulating film and connected to the first contact electrode. And a second wiring formed on the insulating film and formed of a second conductive film connected to the second contact electrode, the semiconductor device comprising: a first contact electrode and a second contact electrode A semiconductor device, characterized in that a needle for measuring electric resistance is brought into contact with each of them, and electric resistance between them is measured. 7. The first wiring and the second wiring each have a comb-toothed pattern shape, and the first wiring and the second wiring are arranged so as to mesh with each other without coming into contact with each other. 7. The semiconductor device according to claim 6, wherein: 8. The semiconductor device according to claim 6, wherein the first conductive film is thicker than the second conductive film. 9. The semiconductor device according to claim 6, wherein the first conductive film and the second conductive film are films made of metal or polysilicon.