JP2003253431A - Thin film deposition apparatus - Google Patents
Thin film deposition apparatusInfo
- Publication number
- JP2003253431A JP2003253431A JP2002052673A JP2002052673A JP2003253431A JP 2003253431 A JP2003253431 A JP 2003253431A JP 2002052673 A JP2002052673 A JP 2002052673A JP 2002052673 A JP2002052673 A JP 2002052673A JP 2003253431 A JP2003253431 A JP 2003253431A
- Authority
- JP
- Japan
- Prior art keywords
- evaporation
- thin film
- pitch
- film forming
- forming apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000427 thin-film deposition Methods 0.000 title abstract 3
- 238000001704 evaporation Methods 0.000 claims abstract description 159
- 230000008020 evaporation Effects 0.000 claims abstract description 156
- 239000010408 film Substances 0.000 claims abstract description 29
- 239000010409 thin film Substances 0.000 claims abstract description 29
- 239000000463 material Substances 0.000 claims abstract description 24
- 239000002019 doping agent Substances 0.000 claims abstract description 20
- 230000015572 biosynthetic process Effects 0.000 claims description 10
- 239000000758 substrate Substances 0.000 abstract description 23
- 230000008021 deposition Effects 0.000 abstract description 4
- 230000010355 oscillation Effects 0.000 abstract description 2
- 238000000151 deposition Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 3
- 239000011368 organic material Substances 0.000 description 2
- HXWWMGJBPGRWRS-CMDGGOBGSA-N 4- -2-tert-butyl-6- -4h-pyran Chemical compound O1C(C(C)(C)C)=CC(=C(C#N)C#N)C=C1\C=C\C1=CC(C(CCN2CCC3(C)C)(C)C)=C2C3=C1 HXWWMGJBPGRWRS-CMDGGOBGSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- YYMBJDOZVAITBP-UHFFFAOYSA-N rubrene Chemical compound C1=CC=CC=C1C(C1=C(C=2C=CC=CC=2)C2=CC=CC=C2C(C=2C=CC=CC=2)=C11)=C(C=CC=C2)C2=C1C1=CC=CC=C1 YYMBJDOZVAITBP-UHFFFAOYSA-N 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、例えば、有機ＬＥ
Ｄ素子の発光層に用いられる有機薄膜を蒸着によって形
成するための薄膜形成装置に関する。TECHNICAL FIELD The present invention relates to an organic LE, for example.
The present invention relates to a thin film forming apparatus for forming an organic thin film used for a light emitting layer of a D element by vapor deposition.
【０００２】[0002]
【従来の技術】近年、フルカラーフラットパネルディス
プレイ用の素子として、有機ＬＥＤ素子が注目されてい
る。有機ＬＥＤ素子は、蛍光性有機化合物を電気的に励
起して発光させる自発光型素子で、高輝度、高視野角、
面発光、薄型で多色発光が可能であり、しかも数Ｖとい
う低電圧の直流印加で発光する全固体素子で、かつ低温
においてもその特性の変化が少ないという特徴を有して
いる。2. Description of the Related Art In recent years, organic LED elements have been receiving attention as elements for full-color flat panel displays. The organic LED element is a self-luminous element that electrically excites a fluorescent organic compound to emit light, and has high brightness, a wide viewing angle,
It is a surface-emitting device, is thin, and is capable of multicolored light emission. Moreover, it is an all-solid-state device that emits light by applying a DC voltage as low as a few volts, and its characteristics are small even at low temperatures.
【０００３】図７は、従来の有機ＬＥＤ素子を作成する
ための薄膜形成装置の概略構成図である。図７に示すよ
うに、この薄膜形成装置１０１にあっては、真空槽１０
２の下部に蒸発源１０３が配設されるとともに、この蒸
発源１０３の上方に成膜対象物である基板１０４が配置
されている。そして、蒸発源１０３から蒸発される有機
材料の蒸気を、マスク１０５を介して基板１０４に蒸着
させることによって所定パターンの有機薄膜を形成する
ようになっている。FIG. 7 is a schematic configuration diagram of a thin film forming apparatus for producing a conventional organic LED element. As shown in FIG. 7, in the thin film forming apparatus 101, the vacuum chamber 10
An evaporation source 103 is disposed below the evaporation source 2, and a substrate 104 which is a film formation target is disposed above the evaporation source 103. Then, the vapor of the organic material evaporated from the evaporation source 103 is deposited on the substrate 104 through the mask 105 to form an organic thin film having a predetermined pattern.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、近年、
マスクのピッチのファイン化や基板の大型化に伴い、従
来の技術では均一な膜厚分布を得ることが困難になりつ
つあるというという問題がある。However, in recent years,
As the mask pitch becomes finer and the size of the substrate becomes larger, it is becoming difficult to obtain a uniform film thickness distribution by the conventional technique.
【０００５】本発明は、このような従来の技術の課題を
解決するためになされたもので、その目的とするところ
は、均一な膜厚分布の有機薄膜を形成しうる薄膜形成装
置を提供することにある。The present invention has been made in order to solve the problems of the prior art, and an object thereof is to provide a thin film forming apparatus capable of forming an organic thin film having a uniform film thickness distribution. Especially.
【０００６】[0006]
【課題を解決するための手段】上記目的を達成するため
になされた請求項１記載の発明は、所定の成膜対象物に
対して薄膜を形成するための真空槽と、前記真空槽内に
所定のピッチで配設された複数の蒸発源で構成される蒸
発部とを備え、前記蒸発源は、所定のピッチで配置され
た複数の蒸発口を有し、前記蒸発部が、前記成膜対象物
に対して相対的に揺動するように構成されていることを
特徴とする薄膜形成装置である。請求項２記載の発明
は、請求項１記載の発明において、前記蒸発部の揺動方
向が前記成膜対象物の成膜面に対してほぼ平行であるこ
とを特徴とする。請求項３記載の発明は、請求項１又は
２のいずれか１項記載の発明において、前記蒸発部が、
ホスト材料を収容したホスト蒸発源とドーパント材料を
収容したドーパント蒸発源を交互に配置して構成されて
いることを特徴とする。請求項４記載の発明は、請求項
１又は２のいずれか１項記載の発明において、前記蒸発
部の揺動距離が、当該蒸発源のピッチとほぼ同一である
ことを特徴とする。請求項５記載の発明は、請求項１乃
至３のいずれか１項記載の発明において、前記蒸発部の
揺動距離が、同一の蒸発材料を収容した隣り合う蒸発源
のピッチとほぼ同一であることを特徴とする。請求項６
記載の発明は、請求項１乃至５のいずれか１項記載の発
明において、前記蒸発源が、細長形状の蒸発容器を有
し、前記複数の蒸発口が前記蒸発容器の長手方向に設け
られていることを特徴とする。請求項７記載の発明は、
請求項１乃至６のいずれか１項記載の発明において、長
手方向に所定のピッチで設けられた前記蒸発口は、隣り
合う前記蒸発源について、互いに前記ピッチの半分だけ
ずらして配列されていることを特徴とする。請求項８記
載の発明は、請求項１乃至６のいずれか１項記載の発明
において、長手方向に所定のピッチで設けられた前記蒸
発口は、同一の材料を収容した隣り合う前記蒸発源につ
いて、互いに前記ピッチの半分だけずらして配列されて
いることを特徴とするThe invention according to claim 1 made in order to achieve the above object, comprises: a vacuum chamber for forming a thin film on a predetermined film-forming target; An evaporation unit configured by a plurality of evaporation sources arranged at a predetermined pitch, wherein the evaporation source has a plurality of evaporation ports arranged at a predetermined pitch, and the evaporation unit forms the film. A thin film forming apparatus characterized in that it is configured to swing relative to an object. A second aspect of the invention is characterized in that, in the first aspect of the invention, the swinging direction of the evaporation portion is substantially parallel to the film formation surface of the film formation target. According to a third aspect of the invention, in the invention according to any one of the first and second aspects, the evaporation section is
A host evaporation source containing a host material and a dopant evaporation source containing a dopant material are alternately arranged. According to a fourth aspect of the present invention, in the invention according to any one of the first and second aspects, the swing distance of the evaporation portion is substantially the same as the pitch of the evaporation source. According to a fifth aspect of the present invention, in the invention according to any one of the first to third aspects, the swing distance of the evaporation portion is substantially the same as the pitch of the adjacent evaporation sources accommodating the same evaporation material. It is characterized by Claim 6
In the invention described in any one of claims 1 to 5, the evaporation source has an elongated evaporation container, and the plurality of evaporation ports are provided in a longitudinal direction of the evaporation container. It is characterized by being The invention according to claim 7 is
The invention according to any one of claims 1 to 6, wherein the evaporation ports provided at a predetermined pitch in the longitudinal direction are arranged so that the evaporation sources adjacent to each other are displaced from each other by half the pitch. Is characterized by. The invention according to claim 8 is the invention according to any one of claims 1 to 6, wherein the evaporation ports provided at a predetermined pitch in the longitudinal direction are the evaporation sources adjacent to each other containing the same material. , Are arranged offset from each other by half the pitch.
【０００７】本発明にあっては、複数の蒸発口を有する
蒸発部が成膜対象物に対して相対的に揺動するように構
成されていることから、蒸発材料の蒸気が均一な状態で
成膜対象物に到達し、その結果、マスクのピッチがファ
イン化し、また基板が大型化した場合であっても、成膜
対象物上において均一な膜厚分布を得ることができ、広
い範囲にわたって均一な膜厚分布を得ることができる。According to the present invention, since the evaporation portion having the plurality of evaporation ports is configured to swing relative to the object to be film-formed, the vapor of the evaporation material is kept in a uniform state. Even when the film formation target is reached, and as a result the mask pitch becomes finer and the substrate becomes larger, a uniform film thickness distribution can be obtained on the film formation target, and a wide range can be obtained. A uniform film thickness distribution can be obtained.
【０００８】[0008]
【発明の実施の形態】以下、本発明の実施の形態を図面
を参照して詳細に説明する。図１は、本発明に係る薄膜
形成装置の好ましい実施の形態の正面側断面図であり、
有機ＬＥＤ素子の有機薄膜を形成するためのものであ
る。BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. FIG. 1 is a front side sectional view of a preferred embodiment of a thin film forming apparatus according to the present invention,
It is for forming an organic thin film of an organic LED element.
【０００９】また、図２（ａ）は、同薄膜形成装置の蒸
発部の断面図、図２（ｂ）は、同蒸発部の外観構成を示
す平面図である。図３は、本実施の形態の蒸発源の蒸発
口の位置関係を示す説明図である。FIG. 2 (a) is a sectional view of the evaporation portion of the thin film forming apparatus, and FIG. 2 (b) is a plan view showing the appearance of the evaporation portion. FIG. 3 is an explanatory diagram showing the positional relationship of the evaporation ports of the evaporation source of this embodiment.
【００１０】図１に示すように、本実施の形態の薄膜形
成装置１は、図示しない真空排気系に接続された真空槽
２を有し、この真空槽２の下方には後述する蒸発部３が
配設されている。As shown in FIG. 1, the thin film forming apparatus 1 of the present embodiment has a vacuum chamber 2 connected to a vacuum exhaust system (not shown), and below the vacuum chamber 2 is an evaporation unit 3 which will be described later. Is provided.
【００１１】そして、この蒸発部３の上方近傍には、蒸
発部３から蒸発する蒸気を制御するためのシャッター７
が設けられている。A shutter 7 for controlling vapor evaporated from the evaporation unit 3 is provided in the vicinity of and above the evaporation unit 3.
Is provided.
【００１２】一方、真空槽２の上部には、基板ホルダー
４が設けられ、この基板ホルダー４に、蒸着膜を形成す
べき基板（成膜対象物）５が固定されている。そして、
基板５の下方近傍にはマスク６が設けられている。On the other hand, a substrate holder 4 is provided above the vacuum chamber 2, and a substrate (deposition target) 5 on which a vapor deposition film is to be formed is fixed to the substrate holder 4. And
A mask 6 is provided near the lower part of the substrate 5.
【００１３】図２（ａ）（ｂ）に示すように、本実施の
形態の蒸発部３は、図示しない駆動機構に連結され、基
板５の成膜面５ａに対して平行な方向（揺動方向Ｘ）に
一体的に揺動（異なる方向へ移動することをいう。特に
本実施の形態においては往復動することをいう。）する
ように構成されている。As shown in FIGS. 2A and 2B, the evaporation unit 3 of this embodiment is connected to a drive mechanism (not shown) and is parallel to the film formation surface 5a of the substrate 5 (oscillation). It is configured to integrally swing in the direction X) (to move in different directions, particularly to reciprocate in the present embodiment).
【００１４】ここで、蒸発部３は、複数の蒸発源３０、
３１から構成されている。本実施の形態の場合は、ホス
ト材料を蒸発させるためのホスト蒸発源３０と、ドーパ
ント材料を蒸発させるためのドーパント蒸発源３１とを
有している。Here, the evaporation unit 3 includes a plurality of evaporation sources 30,
It is composed of 31. In the case of the present embodiment, the host evaporation source 30 for evaporating the host material and the dopant evaporation source 31 for evaporating the dopant material are included.
【００１５】これらホスト蒸発源３０とドーパント蒸発
源３１は、それぞれ細長の円筒形状の蒸発容器３２、３
３を有している。The host evaporation source 30 and the dopant evaporation source 31 are elongated cylindrical evaporation containers 32 and 3, respectively.
Have three.
【００１６】ここで、各ホスト蒸発源３０の蒸発容器３
２の内部には、所定の有機系の蒸発材料（例えばＡｌｑ
３）４０が収容され、この蒸発材料４０は、図示しない
ヒータによって加熱されるようになっている。Here, the evaporation container 3 of each host evaporation source 30
2 has a predetermined organic evaporation material (for example, Alq
3) 40 is accommodated, and the evaporation material 40 is heated by a heater (not shown).
【００１７】ここで、各ホスト蒸発源３０は、揺動方向
と直交する方向（揺動直交方向Ｙ）に向けて、所定のピ
ッチＰをおいて平行に配列されている。Here, the host evaporation sources 30 are arranged in parallel at a predetermined pitch P in a direction orthogonal to the rocking direction (rocking orthogonal direction Y).
【００１８】そして、各ホスト蒸発源３０の蒸発容器３
２の上部の中央部には、その長手方向に沿って所定の間
隔Ｑで複数の蒸発口３４が直線的に設けられている。す
なわち、これら各蒸発口３４は、揺動直交方向Ｙに沿っ
て直線的に配列され、これにより、隣接するホスト蒸発
源３０の蒸発口３４の、揺動方向Ｘに対するピッチもＰ
となる。Then, the evaporation container 3 of each host evaporation source 30
A plurality of evaporation ports 34 are linearly provided in the central portion of the upper part of 2 at predetermined intervals Q along the longitudinal direction. That is, these evaporation ports 34 are linearly arranged along the swinging orthogonal direction Y, whereby the pitch of the evaporation ports 34 of the adjacent host evaporation sources 30 with respect to the swinging direction X is also P.
Becomes
【００１９】その一方、図３に示すように、本実施の形
態にあっては、隣接するホスト蒸発源３０の蒸発口３４
が、揺動直交方向Ｙに半ピッチ（Ｑ／２）ずらして配列
されている。On the other hand, as shown in FIG. 3, in the present embodiment, the evaporation port 34 of the adjacent host evaporation source 30 is used.
Are arranged with a half pitch (Q / 2) offset in the swinging orthogonal direction Y.
【００２０】一方、ドーパント蒸発源３１は、ホスト蒸
発源３０と隣接する位置に配設され、上記同様のピッチ
Ｐをおいて平行に配列されている。そして、各ドーパン
ト蒸発源３１の蒸発容器３３の内部には、所定の有機系
の蒸発材料（例えばＤＣＪＴＢ（4-dicyanomethylene-6
-cp-julolidinostyryl-2-tert-butyl-4H-pyran）、ルブ
レン等）４１が収容され、この蒸発材料４１は、図示し
ないヒータによって加熱されるようになっている。On the other hand, the dopant evaporation source 31 is arranged at a position adjacent to the host evaporation source 30, and is arranged in parallel at the same pitch P as described above. A predetermined organic evaporation material (for example, DCJTB (4-dicyanomethylene-6) is provided inside the evaporation container 33 of each dopant evaporation source 31.
-cp-julolidinostyryl-2-tert-butyl-4H-pyran), rubrene, etc.) 41, and the evaporation material 41 is heated by a heater (not shown).
【００２１】さらに、各ドーパント蒸発源３１の蒸発容
器３３の上部の中央部には、その長手方向に沿って所定
の間隔Ｑで複数の蒸発口３５が直線的に設けられてい
る。Further, a plurality of evaporation ports 35 are linearly provided at a predetermined interval Q along the longitudinal direction at the center of the upper part of the evaporation container 33 of each dopant evaporation source 31.
【００２２】この場合、各蒸発口３５は、ホスト蒸発源
３０の場合と同様に、揺動直交方向Ｙに沿って直線的に
配列され、隣接するドーパント蒸発源３１の蒸発口３５
の関係についても、ホスト蒸発源３０の場合と同様に、
揺動直交方向Ｙに半ピッチ（Ｑ／２）ずらして配列され
ている。In this case, as in the case of the host evaporation source 30, the evaporation ports 35 are linearly arranged along the swinging orthogonal direction Y, and the evaporation ports 35 of the adjacent dopant evaporation sources 31 are arranged.
Regarding the relationship of, like the case of the host evaporation source 30,
They are arranged so as to be shifted by a half pitch (Q / 2) in the swinging orthogonal direction Y.
【００２３】一方、シャッター７は、蒸発部３を覆う大
きさの平板からなるもので、このシャッター７には、各
ホスト蒸発源３０及びドーパント蒸発源３１に対応する
スリット状の開口部７０が形成されている。On the other hand, the shutter 7 is made of a flat plate having a size that covers the evaporation portion 3. The shutter 7 has slit-shaped openings 70 corresponding to the host evaporation sources 30 and the dopant evaporation sources 31. Has been done.
【００２４】そして、このシャッター７は、図示しない
駆動機構に連結され、上記揺動方向Ｘに移動して開閉動
作を行うとともに、蒸発部３と同期して揺動できるよう
に構成されている。The shutter 7 is connected to a drive mechanism (not shown), and is configured to move in the swinging direction X to perform an opening / closing operation and to swing in synchronization with the evaporation unit 3.
【００２５】なお、シャッター７は、例えば冷却水を循
環させることによって所定の温度に制御されるようにな
っている。The shutter 7 is controlled to a predetermined temperature by circulating cooling water, for example.
【００２６】このような構成を有する本実施の形態にお
いて基板５上に成膜を行う場合には、真空槽２内を所定
の圧力に調整した後、図４に示すように、シャッター７
を閉じた状態で、蒸発部３のホスト蒸発源３０及びドー
パント蒸発源３１内の蒸発材料４０、４１の加熱を開始
する。In the case of forming a film on the substrate 5 in the present embodiment having such a structure, after adjusting the inside of the vacuum chamber 2 to a predetermined pressure, as shown in FIG.
In the closed state, heating of the evaporation materials 40 and 41 in the host evaporation source 30 and the dopant evaporation source 31 of the evaporation unit 3 is started.
【００２７】これにより、各ホスト蒸発源３０及びドー
パント蒸発源３１の蒸発口３５から蒸発材料４０、４１
の蒸気が放出される。この時点では、蒸発材料４０、４
１の蒸気はシャッター７によって遮られるため、基板５
には到達しない。As a result, the evaporation materials 40 and 41 from the evaporation ports 35 of the respective host evaporation sources 30 and the dopant evaporation sources 31.
Steam is released. At this point, the evaporation material 40, 4
Since the vapor of 1 is blocked by the shutter 7, the substrate 5
Does not reach.
【００２８】そして、蒸発材料４０、４１の蒸発速度が
所定の値に到達した時点でシャッター７を移動させ、そ
の開口部７０を各ホスト蒸発源３０及びドーパント蒸発
源３１の蒸発口３５の直上に位置させる。When the evaporation rate of the evaporation materials 40 and 41 reaches a predetermined value, the shutter 7 is moved so that the opening 70 is located directly above the evaporation ports 35 of the host evaporation source 30 and the dopant evaporation source 31. Position it.
【００２９】これにより、図５に示すように、シャッタ
ー７の開口部７０を介して蒸発材料４０、４１の蒸気が
基板５に向かうようになる。As a result, as shown in FIG. 5, the vapor of the evaporation materials 40 and 41 is directed toward the substrate 5 through the opening 70 of the shutter 7.
【００３０】そこで、図６に示すように、蒸発部３とシ
ャッター７を揺動させる。本実施の形態の場合は、蒸発
部３とシャッター７を同期させた状態で、上記ホストお
よびドーパント蒸発源３０、３１間のピッチＰだけＸ方
向に揺動させる。Therefore, as shown in FIG. 6, the evaporator 3 and the shutter 7 are swung. In the case of the present embodiment, the evaporation unit 3 and the shutter 7 are synchronized with each other and are swung in the X direction by the pitch P between the host and the dopant evaporation sources 30 and 31.
【００３１】そして、この状態を維持して成膜を行い、
所定の膜厚が得られた時点でシャッター７を閉じて成膜
を終了する。Then, while maintaining this state, film formation is performed,
When the predetermined film thickness is obtained, the shutter 7 is closed and the film formation is completed.
【００３２】以上述べたように本実施の形態にあって
は、複数の蒸発口３５を有する蒸発部３が基板５に対し
て相対的に揺動するように構成されていることから、蒸
発材料４０、４１の蒸気が均一な状態で基板５に到達
し、その結果、マスクのピッチがファイン化し、また基
板５が大型化した場合であっても、基板５上において均
一な膜厚分布を得ることが可能になる。As described above, in the present embodiment, since the evaporation part 3 having the plurality of evaporation ports 35 is configured to swing relative to the substrate 5, the evaporation material The vapors 40 and 41 reach the substrate 5 in a uniform state, and as a result, even if the mask pitch becomes fine and the substrate 5 becomes large, a uniform film thickness distribution is obtained on the substrate 5. It will be possible.
【００３３】特に、本実施の形態においては、蒸発部３
の揺動方向が基板５の成膜面５ａに対して平行であると
ともに、蒸発部３の揺動距離が蒸発口３４、３５のピッ
チＰと同一であり、さらに、蒸発部３の蒸発口３４、３
５を当該蒸発部３の揺動方向Ｘに対して半ピッチずらし
て配列されているため、真空槽２内の広い空間内におい
て蒸発材料４０、４１の蒸気がより均一な状態で基板５
に到達し、その結果、大型の基板５上において均一な膜
厚分布を得ることができる。Particularly, in the present embodiment, the evaporation unit 3
Is parallel to the film formation surface 5a of the substrate 5, the swing distance of the evaporation unit 3 is the same as the pitch P of the evaporation ports 34, 35, and the evaporation port 34 of the evaporation unit 3 is Three
5 are arranged so as to be shifted by a half pitch with respect to the swinging direction X of the evaporation unit 3, so that the vapor of the evaporation materials 40 and 41 is more uniform in the wide space in the vacuum chamber 2
As a result, a uniform film thickness distribution can be obtained on the large-sized substrate 5.
【００３４】さらに、本実施の形態においては、細長形
状の蒸発容器３２、３３の長手方向に複数の蒸発口が設
けられ、この蒸発容器３２、３３を幅方向に揺動させる
ように構成されているため、広い範囲にわたって均一な
膜厚分布を得ることができるものである。Further, in the present embodiment, a plurality of elongate evaporation containers 32 and 33 are provided with a plurality of evaporation ports in the longitudinal direction, and the evaporation containers 32 and 33 are configured to swing in the width direction. Therefore, a uniform film thickness distribution can be obtained over a wide range.
【００３５】なお、本発明は上述の実施の形態に限られ
ることなく、種々の変更を行うことができる。例えば、
上記実施の形態においては、蒸発部側を揺動させるよう
にしたが、本発明はこれに限られず、基板側を揺動させ
るように構成することも可能である。The present invention is not limited to the above-mentioned embodiment, and various modifications can be made. For example,
Although the evaporation portion side is swung in the above embodiment, the present invention is not limited to this, and the substrate side may be swung.
【００３６】ただし、装置の小型化及び構成の簡素化の
観点からは、蒸発部側を揺動させることが好ましい。However, from the viewpoint of downsizing of the apparatus and simplification of the configuration, it is preferable to swing the evaporation section side.
【００３７】また、蒸発部の揺動距離についても、プロ
セスの条件や装置構成に応じて適宜変更することができ
る。Also, the swinging distance of the evaporation portion can be appropriately changed according to the process conditions and the apparatus configuration.
【００３８】さらに、複数の蒸発源を用いるのではなく
単一の蒸発源を用いることも可能である。Furthermore, it is also possible to use a single evaporation source instead of using a plurality of evaporation sources.
【００３９】さらにまた、蒸発源の移動方向、形状、ピ
ッチ、数、蒸発口の数、間隔、形状、配置等について
も、プロセスの条件や装置構成に応じて適宜変更するこ
とができる。Further, the moving direction, shape, pitch, number of evaporation sources, number of evaporation ports, interval, shape, arrangement, etc. of the evaporation source can be appropriately changed according to the process conditions and the apparatus configuration.
【００４０】加えて、本発明は有機ＬＥＤ素子の有機薄
膜を形成するための装置に限られず、種々の蒸着装置に
適用することができる。ただし、本発明は有機材料を用
いて有機ＬＥＤ素子の有機薄膜を形成する場合に特に有
効なものである。In addition, the present invention is not limited to the apparatus for forming the organic thin film of the organic LED element, and can be applied to various vapor deposition apparatuses. However, the present invention is particularly effective when forming an organic thin film of an organic LED element using an organic material.
【００４１】[0041]
【発明の効果】以上述べたように本発明によれば、マス
クのピッチがファイン化し、また基板が大型化した場合
であっても、成膜対象物上において均一な膜厚分布を得
ることができる。As described above, according to the present invention, it is possible to obtain a uniform film thickness distribution on a film-forming target even when the mask pitch becomes fine and the substrate becomes large. it can.
【図１】本発明に係る薄膜形成装置の好ましい実施の形
態の正面側断面図FIG. 1 is a front side sectional view of a preferred embodiment of a thin film forming apparatus according to the present invention.
【図２】（ａ）：同薄膜形成装置の蒸発部の断面図 （ｂ）：同蒸発部の外観構成を示す平面図FIG. 2A is a sectional view of an evaporation part of the thin film forming apparatus. (B): A plan view showing the external configuration of the evaporation unit.
【図３】本実施の形態の蒸発源の蒸発口の位置関係を示
す説明図FIG. 3 is an explanatory diagram showing a positional relationship of evaporation ports of an evaporation source according to the present embodiment.
【図４】同実施の形態における成膜工程を示す説明図
（その１）FIG. 4 is an explanatory view (No. 1) showing a film forming process in the same embodiment.
【図５】同実施の形態における成膜工程を示す説明図
（その２）FIG. 5 is an explanatory view (No. 2) showing a film forming process in the same embodiment.
【図６】同実施の形態における成膜工程を示す説明図
（その３）FIG. 6 is an explanatory view (No. 3) showing a film forming process in the same embodiment.
【図７】従来の有機ＬＥＤ素子を作成するための薄膜形
成装置の概略構成図FIG. 7 is a schematic configuration diagram of a thin film forming apparatus for producing a conventional organic LED element.
１…薄膜形成装置 ２…真空槽 ３…蒸発部 ５…基板
（成膜対象物） ５ａ…成膜面 ３０…ホスト蒸発源
３１…ドーパント蒸発源 ３２、３３…蒸発容器
３４、３５…蒸発口 Ｐ…ピッチ ４０、４１…蒸発材
料DESCRIPTION OF SYMBOLS 1 ... Thin film forming apparatus 2 ... Vacuum tank 3 ... Evaporating part 5 ... Substrate (deposition object) 5a ... Deposition surface 30 ... Host evaporation source
31 ... Dopant evaporation source 32, 33 ... Evaporation container 34, 35 ... Evaporation port P ... Pitch 40, 41 ... Evaporation material
───────────────────────────────────────────────────── フロントページの続き Ｆターム(参考） 3K007 AB11 AB18 DB03 FA01 4K029 BA62 BC07 BD00 CA01 DB12 DB14 DB23 ─────────────────────────────────────────────────── ─── Continued front page F-term (reference) 3K007 AB11 AB18 DB03 FA01 4K029 BA62 BC07 BD00 CA01 DB12 DB14 DB23
Claims (8)
ための真空槽と、 前記真空槽内に所定のピッチで配設された複数の蒸発源
で構成される蒸発部とを備え、 前記蒸発源は、所定のピッチで配置された複数の蒸発口
を有し、 前記蒸発部が、前記成膜対象物に対して相対的に揺動す
るように構成されていることを特徴とする薄膜形成装
置。1. A vacuum tank for forming a thin film on a predetermined film-forming target, and an evaporation section composed of a plurality of evaporation sources arranged at a predetermined pitch in the vacuum tank. The evaporation source has a plurality of evaporation ports arranged at a predetermined pitch, and the evaporation unit is configured to swing relative to the film formation target. Thin film forming apparatus.
成膜面に対してほぼ平行であることを特徴とする請求項
１記載の薄膜形成装置。2. The thin film forming apparatus according to claim 1, wherein a swinging direction of the evaporation unit is substantially parallel to a film forming surface of the film forming object.
ト蒸発源とドーパント材料を収容したドーパント蒸発源
を交互に配置して構成されていることを特徴とする請求
項１又は２のいずれか１項記載の薄膜形成装置。3. The evaporation portion is configured by alternately arranging a host evaporation source containing a host material and a dopant evaporation source containing a dopant material. The thin film forming apparatus according to item 1.
ッチとほぼ同一であることを特徴とする請求項１又はの
いずれか１項記載の薄膜形成装置。4. The thin film forming apparatus according to claim 1, wherein the swinging distance of the evaporation portion is substantially the same as the pitch of the evaporation source.
を収容した隣り合う蒸発源のピッチとほぼ同一であるこ
とを特徴とする請求項１乃至３のいずれか１項記載の薄
膜形成装置。5. The thin film according to claim 1, wherein the oscillating distance of the evaporation portion is substantially the same as the pitch of adjacent evaporation sources containing the same evaporation material. Forming equipment.
し、前記複数の蒸発口が前記蒸発容器の長手方向に設け
られていることを特徴とする請求項１乃至５のいずれか
１項記載の薄膜形成装置。6. The evaporation source has an elongate evaporation container, and the plurality of evaporation ports are provided in a longitudinal direction of the evaporation container. The thin film forming apparatus according to the item.
蒸発口は、隣り合う前記蒸発源について、互いに前記ピ
ッチの半分だけずらして配列されていることを特徴とす
る請求項１乃至６のいずれか１項記載の薄膜形成装置。7. The evaporation ports provided at a predetermined pitch in the longitudinal direction are arranged so that adjacent evaporation sources are displaced from each other by half the pitch. The thin film forming apparatus according to claim 1.
蒸発口は、同一の材料を収容した隣り合う前記蒸発源に
ついて、互いに前記ピッチの半分だけずらして配列され
ていることを特徴とする請求項１乃至６のいずれか１項
記載の薄膜形成装置。8. The evaporation ports provided at a predetermined pitch in the longitudinal direction are arranged so that adjacent evaporation sources containing the same material are offset from each other by half the pitch. The thin film forming apparatus according to claim 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002052673A JP2003253431A (en) | 2002-02-28 | 2002-02-28 | Thin film deposition apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002052673A JP2003253431A (en) | 2002-02-28 | 2002-02-28 | Thin film deposition apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2003253431A true JP2003253431A (en) | 2003-09-10 |
Family
ID=28664307
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002052673A Pending JP2003253431A (en) | 2002-02-28 | 2002-02-28 | Thin film deposition apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2003253431A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008221532A (en) * | 2007-03-09 | 2008-09-25 | Oshima Denki Seisakusho:Kk | Film deposition system |
| WO2010065695A3 (en) * | 2008-12-04 | 2010-09-10 | Veeco Instruments Inc. | Chemical vapor deposition flow inlet elements and methods |
| CN103649364A (en) * | 2011-07-07 | 2014-03-19 | 松下电器产业株式会社 | Vacuum deposition device |
-
2002
- 2002-02-28 JP JP2002052673A patent/JP2003253431A/en active Pending
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008221532A (en) * | 2007-03-09 | 2008-09-25 | Oshima Denki Seisakusho:Kk | Film deposition system |
| WO2010065695A3 (en) * | 2008-12-04 | 2010-09-10 | Veeco Instruments Inc. | Chemical vapor deposition flow inlet elements and methods |
| CN102308368A (en) * | 2008-12-04 | 2012-01-04 | 威科仪器有限公司 | Chemical vapor deposition flow inlet elements and methods |
| US8303713B2 (en) | 2008-12-04 | 2012-11-06 | Veeco Instruments Inc. | Chemical vapor deposition flow inlet elements and methods |
| CN103352206A (en) * | 2008-12-04 | 2013-10-16 | 威科仪器有限公司 | Chemical vapor deposition flow inlet elements and methods |
| US8636847B2 (en) | 2008-12-04 | 2014-01-28 | Veeco Instruments Inc. | Chemical vapor deposition flow inlet elements and methods |
| CN102308368B (en) * | 2008-12-04 | 2014-02-12 | 威科仪器有限公司 | Chemical vapor deposition flow inlet elements and methods |
| CN103352206B (en) * | 2008-12-04 | 2015-09-16 | 威科仪器有限公司 | For inlet mouth element and the manufacture method thereof of chemical vapour deposition |
| US10017876B2 (en) | 2008-12-04 | 2018-07-10 | Veeco Instruments Inc. | Chemical vapor deposition flow inlet elements and methods |
| CN103649364A (en) * | 2011-07-07 | 2014-03-19 | 松下电器产业株式会社 | Vacuum deposition device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100874662B1 (en) | Continuous vapor deposition system | |
| KR101182265B1 (en) | Evaporation Source and Deposition Apparatus having the same | |
| JP5417552B2 (en) | Vapor deposition particle injection apparatus and vapor deposition apparatus | |
| JP2004107764A (en) | Thin film-forming apparatus | |
| US20070148348A1 (en) | Evaporation source and method of depositing thin film using the same | |
| JP2007186787A (en) | Vapor deposition pot, thin-film forming apparatus provided therewith and method for producing display device | |
| TW200541395A (en) | Film formation source, vacuum film formation apparatus, organic EL panel and method of manufacturing the same | |
| TW200904998A (en) | Deposition source, deposition apparatus, and forming method of organic film | |
| JP2009084675A (en) | Vapor-emitting device, apparatus for vapor-depositing organic thin film, and method for vapor-depositing organic thin film | |
| JP2003513169A (en) | Method and apparatus for coating a substrate in a vacuum | |
| TW201250024A (en) | Vapor-deposition device, vapor-deposition method | |
| JP4156885B2 (en) | Thin film forming equipment | |
| JP2003027218A (en) | Coating apparatus for substrate with large area | |
| US20070063644A1 (en) | Selective deposition of charged material for display device, apparatus for such deposition and display device | |
| WO2012133201A1 (en) | Deposition particle emitting device, deposition particle emission method, and deposition device | |
| JP2003293120A (en) | Evaporating source and thin film deposition system using the same | |
| JP4251857B2 (en) | Vacuum film forming apparatus and vacuum film forming method | |
| JP4216522B2 (en) | Evaporation source and thin film forming apparatus using the same | |
| JP2003253431A (en) | Thin film deposition apparatus | |
| JP2003253433A (en) | Thin film deposition apparatus | |
| KR101925064B1 (en) | Manufacturing equipment using vertical type plane source evaporation for high definition AMOLED devices | |
| JP4156891B2 (en) | Thin film forming equipment | |
| JP2004107762A (en) | Evaporation source, and thin-film-forming apparatus using it | |
| JP2004091913A (en) | Film deposition system and film deposition method | |
| JP2003321765A (en) | Vapor deposition method for organic matter, and vapor deposition system and evaporation source used for this method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20040803 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20070307 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20070502 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20070702 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20070703 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20070828 |
|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20071218 |