JP2003243775A5 - - Google Patents
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- JP2003243775A5 JP2003243775A5 JP2003027517A JP2003027517A JP2003243775A5 JP 2003243775 A5 JP2003243775 A5 JP 2003243775A5 JP 2003027517 A JP2003027517 A JP 2003027517A JP 2003027517 A JP2003027517 A JP 2003027517A JP 2003243775 A5 JP2003243775 A5 JP 2003243775A5
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- JP
- Japan
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003027517A JP4826052B2 (ja) | 2003-02-04 | 2003-02-04 | 窒化物半導体レーザ素子 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003027517A JP4826052B2 (ja) | 2003-02-04 | 2003-02-04 | 窒化物半導体レーザ素子 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000023297A Division JP3424634B2 (ja) | 2000-01-27 | 2000-01-27 | 窒化物半導体レーザ素子 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2003243775A JP2003243775A (ja) | 2003-08-29 |
| JP2003243775A5 true JP2003243775A5 (ja) | 2007-03-15 |
| JP4826052B2 JP4826052B2 (ja) | 2011-11-30 |
Family
ID=27785764
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003027517A Expired - Fee Related JP4826052B2 (ja) | 2003-02-04 | 2003-02-04 | 窒化物半導体レーザ素子 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4826052B2 (ja) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006303052A (ja) * | 2005-04-19 | 2006-11-02 | Nec Electronics Corp | 半導体レーザ装置及び半導体レーザ装置の製造方法 |
| JP2008311434A (ja) | 2007-06-14 | 2008-12-25 | Mitsubishi Electric Corp | 半導体光素子の製造方法 |
| JP2008103772A (ja) * | 2008-01-17 | 2008-05-01 | Matsushita Electric Ind Co Ltd | 半導体レーザ装置 |
| DE102012106687B4 (de) * | 2012-07-24 | 2019-01-24 | Osram Opto Semiconductors Gmbh | Steglaser |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10229246A (ja) * | 1997-02-18 | 1998-08-25 | Mitsubishi Electric Corp | リッジ型半導体レーザダイオードとその製造方法 |
| JPH10256645A (ja) * | 1997-03-12 | 1998-09-25 | Matsushita Electric Ind Co Ltd | 半導体発光素子およびその製造方法 |
| JPH114041A (ja) * | 1997-06-13 | 1999-01-06 | Mitsubishi Electric Corp | 半導体レーザの製造方法 |
| JPH11214800A (ja) * | 1998-01-28 | 1999-08-06 | Sony Corp | 半導体装置およびその製造方法 |
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2003
- 2003-02-04 JP JP2003027517A patent/JP4826052B2/ja not_active Expired - Fee Related