JP2003234344A - Method of manufacturing semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To improve the initial state of forming an oxidic insulation film to improve the interfacial state of an oxide based insulation film/a semiconductor substrate with respect to a method of manufacturing a semiconductor device. <P>SOLUTION: After forming an SiO<SB>2</SB>film 5 with 1 to 30 atomic layers by using an ozonic gas 4 containing ozone on the surface of a semiconductor layer 3 having Si as a principal raw material, an oxide film 7 with an excess of oxygen having oxygen more than twice the amount compared with silicon is formed on the SiO<SB>2</SB>film 5. Then, a deposited oxide film 8 is formed on the oxide film 7 with an excess of oxygen by either a chemical vapor phase growth method or a physical vapor phase growth method. <P>COPYRIGHT: (C)2003,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a semiconductor device, and more particularly, to oxidation in an insulating gate type semiconductor device such as a pixel switching element of a liquid crystal display device or a thin film transistor used as a data driver and a gate driver. The present invention relates to a method for manufacturing a semiconductor device characterized by a step of forming an oxide-based insulating film for improving characteristics of a physical-based insulating film / semiconductor interface.

[0002]

2. Description of the Related Art Conventionally, liquid crystal display devices have been used in OA terminals, projectors, etc. because they are small, lightweight, and low in power consumption, or are used in small liquid crystal televisions, etc. due to their portability. Particularly, for a high quality liquid crystal display device, an active matrix liquid crystal display device in which an active element for switching is provided for each pixel is used.

In recent years, in such an active matrix type liquid crystal display device, a polycrystalline silicon TFT capable of obtaining a high mobility and capable of simultaneously forming a peripheral circuit has begun to be put into practical use. Here, refer to FIG. A conventional thin film transistor will be described.

8A to 8C. FIG. 8A is a plan view of a conventional thin film transistor.
8B is a sectional view taken along the alternate long and short dash line connecting AA ′ in FIG. 8A, and FIG.
It is sectional drawing which follows the dashed-dotted line which connects BB 'in (a). First, the thickness is 200 nm on the glass substrate 51.
An amorphous silicon film having a thickness of 50 nm is deposited through the SiO ₂ film 52 by using the plasma CVD method.

Next, a XeCl excimer laser having a wavelength of 308 nm is used to scan and irradiate a pulsed laser beam having a beam shape to convert into a crystallized silicon layer, and then Cl ₂ + BCl ₃ is used as an etching gas in the crystallized silicon layer. By performing the dry etching described above, the polycrystalline silicon layer 53 is patterned into a predetermined shape to form a polycrystalline silicon layer 53 for forming a device.

Next, a plasma CVD (PCVD) method is used to deposit a SiO ₂ film to be a gate insulating film, and then an Al film is deposited and patterned to form a gate electrode 55, and then the SiO ₂ film is patterned. As a result, the gate insulating film 54 is formed.

Next, using the gate electrode 55 as a mask, n
Source / drain regions 56 are formed by ion implantation of type impurities. The region of the polycrystalline silicon layer 53 where the n-type impurities are not ion-implanted becomes the channel region 57.

Next, an interlayer insulating film 58 is formed on the entire surface, contact holes for the source / drain regions 56 are formed, and then a conductive film is deposited on the entire surface and patterned to form source / drain electrodes 59. The basic structure of the thin film transistor is completed.

[0009]

[SUMMARY OF THE INVENTION] However, SiO ₂ film formed by PCVD method contains many defects initial stage of deposition, therefore, when the SiO ₂ film serving as a gate insulating film going to thinner SiO ₂ Since there is a problem in that the rising characteristics of the thin film transistor become dull and the S value (subthreshold coefficient) varies due to the influence of the interface state and fixed charges at the film / polycrystalline silicon layer interface, refer to FIG. Explain. The S value is a constant for evaluating the subthreshold characteristic that represents the performance of a switching element such as a thin film transistor, and is defined as the amount of change in the gate voltage required for the drain current to change by one digit.

FIG. 9 is a diagram showing the dependency of the S value on the gate insulating film thickness,
The S value decreases as the gate insulating film thickness decreases, and the S value varies greatly when the gate insulating film thickness is around 10 nm.

Therefore, it is an object of the present invention to improve the initial state of film formation of an oxide-based insulating film and improve the interface state of the oxide-based insulating film / semiconductor layer.

[0012]

FIG. 1 is an explanatory view of the principle configuration of the present invention, and means for solving the problems in the present invention will be described with reference to FIG. In order to achieve the above object, the present invention provides a method for manufacturing a semiconductor device, wherein an ozone-based gas containing ozone on the surface of a semiconductor layer 3 containing Si as a main raw material. 1 to 3 using 4
After forming the SiO ₂ film 5 of 0 atomic layer, said SiO ₂
An oxide film 7 in which O is more than twice as much oxygen as oxygen is formed on the film 5, and then the deposited oxide film is formed on the oxide film by either a chemical vapor deposition method or a physical vapor deposition method. The method is characterized by having a step of forming the film 8.

As described above, the ozone oxide layer is initially introduced on the surface of the semiconductor layer 3, and the oxygen film 7 in which O is more than twice as much oxygen as Si is oxygen rich, that is, SiO ₂ is richer than oxygen. By sandwiching another layer, the stoichiometry of the deposited oxide film 8 formed thereon can be improved,
As a result, high-quality Si with less fixed charges and interface states
Since the O ₂ film 5 can be formed, it is possible to prevent characteristic deterioration due to fixed charges and interface states.

In this case, the oxide film 7 with excess oxygen is formed by forming the deposited oxide film 8 in a state where ozone is adsorbed on the SiO ₂ film 5 by ozone oxidation. Can act to form.

Further, according to the present invention, in the method of manufacturing a semiconductor device, a SiO ₂ film having 1 to 30 atomic layers is formed on the surface of the semiconductor layer 3 containing Si as a main material by using an ozone-containing gas 4 containing ozone. 5 is formed, the SiO ₂ film 5 is removed, and then a deposited oxide film 8 is formed on the semiconductor layer 3 by either a chemical vapor deposition method or a physical vapor deposition method. Characterize.

As described above, by once removing the SiO ₂ film 5 formed by ozone oxidation, a flat and clean surface without surface contamination can be obtained. Therefore, the deposition gas atmosphere 6 is used thereon. When the deposited oxide film 8 is formed, it is possible to obtain a SiO ₂ film having a small interface state and fixed charges even in the initial film formation stage.

In this case, the ozone gas 4 is used as an initial gas.
Dzong oxidation is a Langmuir phenomenon in which the deposition of each atomic layer occurs sequentially.
A) It is desirable to carry out at 500 ° C or below where the mechanism works.
Therefore, the flatness can be obtained without depending on the plane orientation.
The surface can be obtained. In addition, it contains ozone
Ozone gas 4 means O₃Gas, O₃+ O₂, O ₃+ N
₂, O₃+ Ar, O₃+ O₂+ N₂Such as O₃Gas containing
Anything is fine, but O₃Those who use high partial pressure gas
Is desirable, O₃Oxidation when low partial pressure gas is used
The processing time becomes long, and the Langmuir mechanism easily collapses.
Become.

In order to effectively use O ₃ , it is desirable to irradiate the semiconductor layer 3 with the ozone-based gas 4 from within the mean free path of ozone. In this case, the oxidation rate can be improved by causing the ozone-based gas 4 to flow as a laminar flow along the surface of the semiconductor layer 3.

In any of the above cases, the steps from the oxidation step using the ozone-based gas 4 to the step of forming the deposited oxide film 8 by either the chemical vapor deposition method or the physical vapor deposition method are carried out in the atmosphere. It is desirable to carry out the process in a continuous process without being opened to the outside, whereby the disappearance of adsorbed O ₃ can be reduced and the surface can be kept clean.

The semiconductor layer 3 in the present invention is typically a polycrystalline semiconductor thin film deposited on the substrate 1 through the underlying insulating layer 2 for forming a thin film transistor. It is also applied to bulk semiconductors such as wafers, whereby a good gate insulating film / semiconductor interface can be obtained even when all silicon devices are manufactured by a low temperature process of 500 ° C. or lower.

[0021]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A first embodiment of the present invention will now be described with reference to FIGS. 2 to 5. First, the first embodiment of the present invention will be described with reference to FIG. The manufacturing apparatus used for the embodiment will be described. Refer to FIG. 2A. FIG. 2A is a conceptual configuration diagram of a manufacturing apparatus used in the first embodiment of the present invention, which includes a loader chamber 11 for inserting a substrate to be processed into the manufacturing apparatus, and a gate valve. Ozone oxidation chamber 1 for ozone-oxidizing the substrate to be processed sent via 12
3, PC on the surface of the substrate to be processed sent through the gate valve 14, the pretreatment chamber 15, and the gate valve 16.
It is composed of a PCVD chamber 17 for depositing a VD oxide film and an unloader chamber 19 for taking out the substrate to be processed sent through a gate valve 18.

Refer to FIG. 2 (b). FIG. 2B is a schematic configuration diagram of the ozone oxidation chamber 13 described above.
And the polycrystalline silicon layer that is the substrate to be processed (not shown).
The glass substrate 31 on which
Substrate holder 20 having a heater 21 provided on the
O generated by raw device 22₃Gas 25 through the opening 24
It is equipped with an ozone spraying device 23 that sprays as a laminar flow
I am. The opening 24 of the ozone spraying device 23
The distance between the glass substrate 31 and ₃Average freedom of gas 23
It is desirable to stay within the process.

Next, the manufacturing process of the first embodiment of the present invention will be described with reference to FIGS. See FIG. 3A. First, on the glass substrate 31 that is a transparent insulating substrate, PCV
Underlayer SiO 2 having a thickness of, for example, 200 nm using the D method
₂ film 32 is formed, and then the thickness is, for example, 50 nm
After forming the amorphous silicon film of
By converting the crystallized silicon layer into a crystallized silicon layer by scanning and irradiating a pulsed laser beam having a beam shape with an 8 nm XeCl excimer laser, the crystallized silicon layer is subjected to dry etching using Cl ₂ + BCl ₃ as an etching gas. Is patterned into a predetermined shape to form a polycrystalline silicon layer 33 for forming a device.

Next, referring to FIG. 3B, a laminar flow O ₃ gas 34 is caused to flow along the surface of the polycrystalline silicon layer 33 at a temperature of 500 ° C. or lower, for example, 300 ° C. in an ozone oxidation chamber, so that 1 to 30.
An atomic layer, for example, 10 atomic layer of O ₃ oxide film 35 is formed.

It is known that such ozone oxidation at a temperature of 500 ° C. or lower follows the Langmuir mechanism. Further, since the O ₃ gas 34 is supplied as a laminar flow, the oxidation rate is increased and the Langmuir mechanism is increased. The oxidation process can proceed without breaking down, and
An oxide film thickness that does not depend on the plane orientation of Si can be expected.

Next, referring to FIG. 3C, an O ₃ oxide film 35 is placed in the PCVD chamber through the pretreatment chamber.
The glass substrate 31 on which the is formed is loaded. At this point, O
Active O ₃ molecules 36 are adsorbed on the surface of the _3- oxide film 35.

Next, referring to FIG. 3D, SiH ₄ gas and N ₂ O gas are introduced into the PCVD chamber to perform a film forming process in the PCVD gas atmosphere 37. In the initial stage of this film forming process, the active O ₃ molecules 36 adsorbed on the surface of the O ₃ oxide film 35 act to form the oxygen-rich oxide film 38.

Subsequently, referring to FIG. 4E, a PCVD oxide film 39 is deposited by performing a film forming process in a PCVD gas atmosphere 37. Thus, by introducing the O ₃ oxide film 35 at the initial stage of film formation and sandwiching one oxygen-rich oxide film 38, the stoichiometry of the PCVD oxide film 39 formed thereon can be improved. A high-quality gate insulating film with less fixed charges and interface states is obtained.

As shown in FIG. 4 (f) and thereafter, similarly to the conventional method, an Al film is deposited by a sputtering method and then patterned to form a gate electrode 40, and then a PCVD oxide film 39 / oxygen rich oxide film is formed. The gate insulating film 4 is formed by patterning the oxide-based oxide film including the 38 / O ₃ oxide film 35.
1 is formed.

Next, referring to FIG. 4G, 10 P ions are used with the gate electrode 40 as a mask.
1 × 10 ¹³ to 1 × 1 with acceleration energy of up to 30 keV
After the source / drain regions 42 are formed by implanting ions with a dose of 0 ¹⁵ cm ^-2 , an excimer laser is used to activate the implanted P ions,
Then, again, the interlayer insulating film 44 is formed by using the PCVD method. The region where P ions are not implanted becomes the channel region 43. In this case, in ion implantation,
H, F, etc. may be introduced at the same time as P is injected.

4H, a contact hole is formed in the interlayer insulating film 44, a conductive film is deposited on the entire surface, and then the conductive film is patterned to form the source / drain electrodes 45. The basic configuration will be completed.

See FIG. 5. FIG. 5 is an explanatory diagram of current-voltage characteristics of the thin film transistor manufactured according to the first embodiment of the present invention, as compared with the conventional thin film transistor in which the O ₃ oxidation treatment shown by the broken line is not performed. It is understood that the rising characteristics are improved, the S value is improved, and the on-current is also increased.

As described above, in the first embodiment of the present invention, since the ozone oxidation treatment is performed prior to the PCVD step, the gate insulating film / polycrystalline silicon layer interface is fixed only by the low temperature treatment step. The charge and the interface state can be reduced, whereby a thin film transistor having excellent rising characteristics and on-current characteristics can be obtained.

Further, since the ozone oxidation process to the PCVD process are carried through the gate valve and the pretreatment chamber, the surface of the substrate is not exposed to the atmosphere, whereby the O ₃ oxide film is not exposed. The adsorbed O ₃ molecules are not lost, and the gate insulating film / polycrystalline silicon layer interface is not contaminated.

Next, with reference to FIG. 6, the manufacturing process of the second embodiment of the present invention will be described. In the second embodiment, the manufacturing process between the ozone oxidation chamber and the PCVD chamber is performed. The processing is performed by a manufacturing apparatus provided with a plasma etching chamber through two pretreatment chambers at the front and rear.

Referring to FIG. 6A, first, as in the case of the above-described first embodiment, the underlying SiO film having a thickness of, for example, 200 nm is formed on the glass substrate 31 which is a transparent insulating substrate by the PCVD method. ₂ film 32 is formed, and then an amorphous silicon film having a thickness of, for example, 50 nm is formed, and then XeC having a wavelength of 308 nm is formed.
The crystallized silicon layer is converted into the crystallized silicon layer by scanning and irradiating a pulsed laser beam having a beam shape with an excimer laser, and then the crystallized silicon layer is subjected to Cl ₂ + BCl.
_By performing dry etching using ₃ as an etching gas, patterning is performed into a predetermined shape to form a polycrystalline silicon layer 33 for forming a device.

Next, in an ozone oxidation chamber, 500 ° C.
Hereinafter, for example, at 300 ° C., a laminar flow O ₃ gas 34 is caused to flow along the surface of the polycrystalline silicon layer 33 to form an O ₃ oxide film 35 having 1 to 30 atomic layers, for example, 10 atomic layers.

Next, referring to FIG. 6B, in the plasma etching chamber, the O ₃ oxide film 3 is formed.
By completely removing 5, the polycrystalline silicon layer 3
Clean the surface of 3.

Next, as shown in FIG. 6C, SiH ₄ gas and N ₂ O gas are introduced into the PCVD chamber and a film forming process is performed in a PCVD gas atmosphere 37 to form a PCVD oxide film 39 to be a gate insulating film. Deposit.

After FIG. 6D, the gate electrode 40, the gate insulating film 41, and the source / drain regions 42 are formed, and then the interlayer insulating film 44 is formed, as in the first embodiment. Then, through the contact hole provided in the interlayer insulating film 44, the source
The basic structure of the thin film transistor is completed by forming the drain electrode 45.

See FIG. 7A. FIG. 7A is an explanatory view of the mobility improving effect of the thin film transistor manufactured according to the second embodiment of the present invention, in which the conventional O ₃ oxidation treatment and removal are not performed. It is understood that the mobility is improved and the variation is reduced as compared with the thin film transistor of.

See FIG. 7B. FIG. 7B is an explanatory view of the variation of the threshold voltage V _th in the 10 cm × 10 cm substrate of the thin film transistor manufactured according to the second embodiment of the present invention. Therefore, it is understood that the variation in V _th is smaller than that in the conventional thin film transistor that does not undergo the O ₃ oxidation treatment and removal.
The V _th is defined as a gate voltage value when the TFT is switched on.

As described above, in the second embodiment of the present invention, the surface of the polycrystalline silicon layer is cleaned by O ₃ oxidation and removal prior to the formation of the PCVD film. The fixed charges and interface states at the interface of the gate insulating film / polycrystalline silicon layer can be reduced only by the treatment step, whereby mobility can be improved and a thin film transistor with small variation in V _th can be obtained.

Further, since the ozone oxidation process to the PCVD process are carried through the gate valve and the pretreatment chamber, the surface of the cleaned substrate is not exposed to the atmosphere, and thus the gate insulation is achieved. The film / polycrystalline silicon layer interface is not contaminated.

Incidentally, also in the second embodiment,
Although the S value is improved, on the other hand, although the description is omitted, also in the first embodiment described above, the mobility and the variation in V _th similar to those in the second embodiment can be improved.

Although the respective embodiments of the present invention have been described above, the present invention is not limited to the configurations described in the respective embodiments, and various modifications can be made. For example, although the material is silicon in each of the above-described embodiments, the material is not limited to silicon, and any semiconductor having silicon as a main component containing another element such as Ge may be used. The band gap of the polycrystalline semiconductor layer can be arbitrarily controlled by adding, thereby making it possible to form the light receiving portion of the thin film line sensor with a semiconductor having high sensitivity according to the wavelength of the light source. .

Further, although a transparent glass substrate is used as the substrate in the above description of each embodiment, a quartz substrate may be used, and further, it is not necessarily required to be transparent, and a certain degree of heat resistance is required. Another insulating substrate having properties may be used.

In the description of each of the above-mentioned embodiments, a base SiO ₂ film is provided on the glass substrate, and the base S
An amorphous silicon film is provided on the iO ₂ film,
The amorphous silicon film may be directly deposited on the glass substrate, or a multi-layered base film such as SiO ₂ / SiN may be used.

Further, in each of the above embodiments, the crystallized silicon film is formed and then patterned into the island-shaped region. However, after the amorphous silicon film is patterned into the island-shaped region, the first and second regions are formed. The crystallized silicon island region may be formed by performing the laser beam irradiation process of 1.

In each of the above embodiments, O
_{Although the 3} gas is supplied as a laminar flow, it does not necessarily have to be a laminar flow, and the O ₃ gas does not have to be a pure O ₃ gas, and O ₃ + O ₂ , O ₃ + N ₂ , O ₃ + O ₂ + N
₂ or an ozone-based gas containing at least O ₃ , such as O ₃ + O ₂ + Ar.

Although the above embodiments have been described on the premise of the active matrix type liquid crystal display device TFT, the present invention is not limited to the active matrix type liquid crystal display device TFT, and a line sensor. The present invention also covers thin-film semiconductor devices for other uses such as thin-film semiconductor devices for applications.

In each of the above embodiments, a semiconductor device using a polycrystalline semiconductor thin film has been described, but the present invention is not limited to a semiconductor device using such a polycrystalline semiconductor thin film. Instead, it is also applied to a semiconductor device using a normal single crystal silicon wafer.

That is, in recent years, even in a silicon device using a single crystal silicon wafer, it has been attempted to perform all the steps in a low temperature treatment step of 500 ° C., and the gate insulating film is formed in such a low temperature treatment step. In this case, the present invention becomes very effective.

Here, the detailed features of the present invention will be described again with reference to FIG. 1 (a) and 1 (b) (Appendix 1) A SiO ₂ film 5 of 1 to 30 atomic layers is formed on the surface of a semiconductor layer 3 containing Si as a main material by using an ozone-based gas 4 containing ozone. After being formed, the SiO ₂ film 5 is formed.
Oxide film 7 in which O is more than twice as much oxygen as Si
And then forming a deposited oxide film 8 on the oxygen-excess oxide film 7 by either a chemical vapor deposition method or a physical vapor deposition method. Device manufacturing method. (Supplementary Note 2) In the step of forming the oxide film 7 with excess oxygen, the deposited oxide film 8 is formed by either the chemical vapor deposition method or the physical vapor deposition method with ozone adsorbed on the SiO ₂ film 5. 2. The method for manufacturing a semiconductor device according to appendix 1, which is a step of forming the semiconductor device in an initial stage of the forming step. (Supplementary Note 3) After forming the SiO ₂ film 5 of the Si with ozone-containing gas 4 containing ozone to the surface of the semiconductor layer 3, main material 30 atomic layers, the SiO ₂ film 5
And then forming a deposited oxide film 8 on the semiconductor layer 3 by either a chemical vapor deposition method or a physical vapor deposition method. (Supplementary Note 4) The oxidation process using the ozone gas 4 is performed in 5
4. The method for manufacturing a semiconductor device according to any one of appendices 1 to 3, which is performed at 00 ° C. or lower. (Supplementary note 5) The method for producing a semiconductor device according to any one of supplementary notes 1 to 4, wherein the oxidation step using the ozone gas 4 is performed within a film thickness by a Langmuir oxidation mechanism. (Supplementary Note 6) Supplementary notes 1 to 5, characterized in that, in the oxidation step using the ozone-based gas 4, the ozone-based gas 4 is applied to the semiconductor layer 3 from within the mean free path of ozone.
2. The method for manufacturing a semiconductor device according to any one of 1. (Supplementary Note 7) The method for manufacturing a semiconductor device according to Supplementary Note 6, wherein the ozone-based gas 4 is supplied as a laminar flow along the surface of the semiconductor layer 3 in the oxidation step using the ozone-based gas 4. (Supplementary Note 8) The steps from the oxidation step using the ozone gas 4 to the step of forming the deposited oxide film 8 by either the chemical vapor deposition method or the physical vapor deposition method are continuously performed without being exposed to the atmosphere. 8. The method for manufacturing a semiconductor device according to any one of appendices 1 to 7, characterized in that the method is performed in the steps described above. (Supplementary Note 9) The method of manufacturing a semiconductor device according to any one of Supplementary Notes 1 to 8, wherein the semiconductor layer 3 containing Si as a main material is either a polycrystalline silicon thin film or bulk silicon.

[0055]

According to the present invention, since the O ₃ oxidation is performed prior to the deposition of the PCVD oxide film, the fixed charge and the interface level at the PCVD oxide film / semiconductor layer interface can be significantly reduced. As a result, excellent device characteristics can be realized, which greatly contributes to high quality of the drive circuit integrated active matrix type liquid crystal display device and the highly integrated semiconductor device.

[Brief description of drawings]

FIG. 1 is an explanatory diagram of a principle configuration of the present invention.

FIG. 2 is a configuration diagram of a manufacturing apparatus used in the first embodiment of the present invention.

FIG. 3 is an explanatory diagram of a manufacturing process up to the middle of the first embodiment of the present invention.

FIG. 4 is an explanatory diagram of the manufacturing process after FIG. 3 of the first embodiment of the present invention.

FIG. 5 is an explanatory diagram of current-voltage characteristics according to the first embodiment of the present invention.

FIG. 6 is an explanatory diagram of a manufacturing process according to the second embodiment of the present invention.

FIG. 7 is an explanatory diagram of mobility and V _th improvement effects in the second embodiment of the present invention.

FIG. 8 is an explanatory diagram of a conventional thin film transistor.

FIG. 9 is an explanatory diagram of S value characteristics in a conventional thin film transistor.

[Explanation of symbols]

1 Substrate 2 Base Insulating Layer 3 Semiconductor Layer 4 Ozone-based Gas 5 SiO ₂ Film 6 Deposition Gas Atmosphere 7 Oxygen Excess Oxide Film 8 Deposition Oxide Film 11 Loader Chamber 12 Gate Valve 13 Ozone Oxidation Chamber 14 Gate Valve 15 Pretreatment Chamber 16 Gate Valve 17 PCVD chamber 18 Gate valve 19 Unloader chamber 20 Substrate holder 21 Heater 22 Ozone generator 23 Ozone spraying device 24 Opening 25 O ₃ gas 31 Glass substrate 32 Base SiO ₂ film 33 Polycrystalline silicon layer 34 Laminar flow O ₃ gas 35 O ₃ oxide film 36 O ₃ molecule 37 PCVD gas atmosphere 38 oxygen-rich oxide film 39 PCVD oxide film 40 gate electrode 41 gate insulating film 42 source / drain region 43 channel region 44 interlayer insulating film 45 source / drain electrode 51 glass substrate 52 underlying SiO ₂ film 53 of polycrystalline silicon layer 54 Over gate insulating film 55 gate electrode 56 source and drain regions 57 the channel region 58 interlayer insulating film 59 source and drain electrodes

   ─────────────────────────────────────────────────── ─── Continued front page    F term (reference) 5F058 BA20 BB04 BB07 BD02 BD04                       BF07 BF23 BF29 BF54 BF62                       BJ10                 5F110 AA14 AA17 AA26 BB01 BB02                       BB10 CC02 DD02 DD03 DD13                       DD14 DD17 EE03 EE44 FF02                       FF09 FF22 FF30 FF35 GG01                       GG02 GG12 GG13 GG25 GG45                       HJ01 HJ04 HJ13 HJ23 HL22                       NN02 NN35 PP03 PP04 PP06                       QQ09 QQ11

Claims (5)

[Claims] 1. A surface of a semiconductor layer containing Si as a main material is formed on the surface of the semiconductor layer.
1 to 30 atoms using ozone-based gas containing zon
Layer of SiO₂After forming a film, the above-mentioned SiO ₂O on the film
Forms an oxide film with more than twice as much oxygen as Si
Then, chemical vapor deposition is performed on the oxygen-rich oxide film.
The deposited oxide film by either the CVD method or the physical vapor deposition method
A method of manufacturing a semiconductor device, characterized by including the steps of:
Law. 2. The surface of a semiconductor layer containing Si as a main raw material
1 to 30 atoms using ozone-based gas containing zon
Layer of SiO₂After forming a film, the above-mentioned SiO ₂Remove the membrane
Then, a chemical vapor deposition method or an object is formed on the semiconductor layer.
The process of forming the deposited oxide film by either of the physical vapor deposition methods
A method of manufacturing a semiconductor device, comprising: 3. The oxidation process using the ozone gas is 5
The method for manufacturing a semiconductor device according to claim 1, wherein the method is performed at a temperature of 00 ° C. or lower. 4. The method of manufacturing a semiconductor device according to claim 1, wherein the oxidation step using the ozone gas is performed within a film thickness by a Langmuir oxidation mechanism. 5. The steps from the oxidation step using the ozone gas to the step of forming a deposited oxide film by any one of the chemical vapor deposition method and the physical vapor deposition method are continuously performed without being exposed to the atmosphere. The method for manufacturing a semiconductor device according to claim 1, wherein the method is performed in a step.