JP2003234330A - Treated body temperature detecting apparatus for vacuum treatment apparatus and vacuum treatment apparatus having the treated body temperature detecting apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a treated body temperature detecting apparatus for a vacuum treatment apparatus that can accurately measure the temperature of a body to be treated during etching, and to provide a vacuum treatment apparatus having the treated body temperature detecting apparatus. <P>SOLUTION: A vacuum vessel chamber 100 is provided at the lower section of a body W to be treated. The chamber is equipped with a chuck 101 that chucks the body W to be treated and at the same time incorporates a temperature monitor 200, a susceptor 102 for placing the chuck 101, and a passage 103 for coolant that is composed inside the susceptor 102. The temperature monitor 200 has a cylindrical probe 202 that projects from the surface 101a of the chuck 101 while freely moving reciprocatively, a fluorescent agent layer 300 formed at the side of an internal space 102c in the probe 202, a spring 203 that energizes the probe 202 against the body W to be treated, and an optical fiber 204 that is provided opposite to the fluorescent agent layer 300 and at the same time, is fixed to the chuck 101. <P>COPYRIGHT: (C)2003,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a processing object temperature detecting device for a vacuum processing apparatus, and a vacuum processing apparatus including the processing object temperature detecting device.

[0002]

2. Description of the Related Art Various conventional vacuum processing apparatuses such as a plasma etching processing apparatus are used for manufacturing semiconductor wafers and the like. These vacuum processing apparatuses have a vacuum container chamber in which an object to be processed such as a semiconductor wafer is processed. The vacuum container chamber is arranged so as to be positioned below the object to be processed, a chuck that attracts the object to be processed by electrostatic force, a susceptor as a mounting table on which the chuck is mounted,
A coolant passage is provided inside the susceptor and immediately below the object to be treated, and a treatment gas introduction passage for introducing a treatment gas.

When high frequency power is applied to the susceptor in the processing step of the object to be processed, the processing gas diffused inside is turned into plasma, and the surface of the object to be processed is etched by the plasma.

When the object to be processed is etched, heat is accumulated in the object to be processed by repeated application of high-frequency power and ion irradiation, and the temperature of the object to be processed rises.

On the other hand, in the etching process, because of its importance, the temperature of the object to be processed is controlled by removing the heat of the object to be processed through the chuck and the susceptor by the refrigerant circulating in the refrigerant passage. Therefore, it is necessary to accurately measure the temperature of the object to be processed.

Conventionally, as a method of accurately measuring the temperature of an object to be processed, a thermolabel whose color changes with temperature is directly attached to the object to be processed, and the temperature of the attached thermolabel is changed according to the degree of color change. A method of estimating the temperature of the object to be processed, a method of directly applying a fluorescent agent to the back surface of the object to be processed, and measuring the intensity of the emitted light of the applied fluorescent agent with a radiation thermometer embedded in a susceptor or the like. , A method of embedding a temperature sensor directly in the object to be processed and reading the output value of the temperature sensor,
A method in which a probe having a temperature sensor embedded at its tip is pressed against an object to be processed and the output value of the temperature sensor is read, a method of measuring infrared rays emitted by the object to which heat has been transferred, and the like have been used.

However, in the method of attaching the thermolabel, it is complicated to attach the thermolabel to each object to be processed, and the temperature measurement error of the thermolabel is ±.
There is a problem in that it is not accurate at about 5 ° C. and only the maximum temperature during the etching process can be measured.

Further, the method of directly applying the fluorescent agent to the back surface of the object to be processed has a problem that it is complicated to apply the fluorescent agent to the back surface of each object to be processed.

Further, in the method of embedding the temperature sensor directly in the object to be processed and the method of embedding the temperature sensor in the tip of the probe, the output of the temperature sensor is easily affected by noise caused by the application of high frequency in the etching process,
In particular, it is possible to form a gate electrode material with high reproducibility, and to use a polysilicon (in-situ doped polysilicon) capable of controlling the resistance value by doping impurities such as B, P, etc. There was a problem that it could not be measured.

In addition, the method of measuring infrared rays radiated from the object to be processed has a problem that it is difficult to measure the infrared rays when the object to be processed is made of silicon due to the nature of the emitted wavelength. It was

In order to solve the above-mentioned problems, in recent years, a method of using a fluorescent optical fiber which penetrates the chuck and the susceptor and is arranged so as to come into contact with the object to be processed in the etching process is used.

As a method of using a fluorescent optical fiber, for example, in Japanese Unexamined Patent Publication No. 6-112303, a temperature measuring means for measuring the temperature of a wafer composed of an ordinary fluorescent optical fiber thermometer and the temperature measuring means are used for the wafer. In order to make sure contact with the back surface of the wafer, in a wafer processing apparatus including a leaf spring that biases the temperature measuring means toward the wafer, a method of measuring the temperature of the wafer by the temperature measuring means is disclosed,
Further, in Japanese Unexamined Patent Publication No. 6-37057, a plasma etching apparatus having a fluorescent optical fiber type temperature probe whose installation position is controlled by a central processing unit and a probe drive controller and which contacts a substrate A method of measuring the temperature of the substrate with a probe is disclosed.

In these methods using the fluorescent optical fiber, the measured value is not affected by noise due to the application of high frequency, and therefore accurate temperature can be measured, while the temperature measuring means and the temperature measuring means can be used. There is a problem that it is very difficult to accurately adjust and set the size of the protrusion of the tip of the child.

As a temperature detecting device for solving this problem,
Japanese Unexamined Patent Publication No. 6-31457 discloses an optical fiber on the measured object side having a phosphor and a protective cap for covering and protecting the fluorescent material at the end on the measured object side, and an optical fiber on the measured object side. An actuator for advancing and retreating with respect to a surface on which the object to be measured is electrostatically adsorbed, and an optical fiber on the measuring instrument side in which the axis of the optical fiber is aligned with the axis of the optical fiber on the object to be measured at the relay section And a measuring instrument of a fluorescence thermometer to which the optical fiber of the measuring instrument side is connected, the actuator is fixed concentrically to the optical fiber of the measured object side and the optical fiber to the measured object side together. It is composed of a disc-shaped collar that can move forward and backward, and a double bellows that connects the collar and the floor of the working space. The gas pressure in the double bellows causes the light on the side of the object to be measured with respect to the object to be measured. Temperature detection device that moves the fiber back and forth (hereinafter referred to as “conventional temperature detection device”). "Referred to.) Disclose.

In the conventional temperature detecting device, since the accuracy of mounting the temperature detecting end at the tip is not required, it is possible to easily adjust and set the protrusion of the tip.

[0016]

However, in the conventional temperature detecting device, the fluorescent optical fiber is divided into two, that is, the optical fiber on the side of the object to be measured and the optical fiber on the side of the measuring instrument. Since the fibers become discontinuous and the optical fiber moves especially during the etching process, a gap is likely to occur between the optical fiber on the DUT side and the optical fiber on the measuring instrument side, while the information transfer capability of the optical fiber Is sensitive to a decrease in the amount of light due to the interval, and has a property that information transmission becomes difficult only when the interval is about 0.25 mm.

As a result, the conventional temperature detecting device has a problem that the temperature of the object to be measured during the etching process cannot be accurately measured.

In the conventional temperature detecting device, the gas pressure in the double bellows causes the optical fiber to move back and forth with respect to the object to be measured. It is necessary to change the gas pressure depending on the condition, and it is difficult to adjust the advance / retreat of the optical fiber. As a result, there is also a problem that the temperature of the object to be measured during the etching process cannot be accurately measured.

An object of the present invention is to provide an object temperature detecting device for a vacuum processing apparatus capable of accurately measuring the temperature of an object being processed during an etching process, and a vacuum provided with the object temperature detecting device. It is to provide a processing device.

[0020]

In order to achieve the above object, the object temperature detecting apparatus according to claim 1 is provided in a vacuum processing apparatus for processing an object, and the temperature of the object is controlled. In a processing object temperature detecting device for a vacuum processing apparatus for detecting, a contactor that receives heat from the processing object, a biasing unit that biases the contactor toward the processing object, and the receiving device. It is characterized by comprising a luminescent agent layer which emits light in response to heat, and a light receiving means which is stationary to receive the emitted light.

According to the object temperature detecting device of the first aspect, the light-receiving means stationaryly receives the light emitted from the luminescent agent layer in response to the heat received from the object via the contactor. Therefore, it is possible to eliminate the need for moving the light receiving means,
Therefore, the temperature of the object to be processed during the etching process can be accurately measured.

The object temperature detecting device according to claim 2
The object temperature detecting apparatus according to claim 1, wherein the urging means is housed in a heat insulating container.

According to the object temperature detecting device of the second aspect, since the heat insulating container accommodates the biasing means therein, the thermal expansion of the biasing means can be prevented, so that the contactor is covered. The temperature of the object to be processed during the etching process can be more accurately measured because the object to be processed can be surely brought into contact with the object to be processed.

According to a third aspect of the present invention, there is provided a temperature detecting device for an object to be processed.
The object temperature detection device according to claim 1 or 2,
The inside of the heat insulating container is vacuum.

According to the object temperature detecting apparatus of the third aspect, since the inside of the heat insulating container is in vacuum, it is possible to eliminate the need to change the gas pressure depending on whether the inside of the vacuum container chamber is atmospheric pressure or vacuum. Therefore, since it is possible to easily adjust the movement of the contactor, it is possible to more accurately measure the temperature of the object to be processed during the etching process.

The object temperature detecting device according to claim 4 is:
4. The object temperature detecting device according to claim 1, wherein the light receiving means are connected in series via a columnar body made of one material selected from the group consisting of quartz and sapphire. It is characterized by comprising a plurality of optical fibers.

According to the object temperature detecting apparatus of the fourth aspect, the light receiving means has a plurality of light beams connected in series through the columnar body made of one material selected from the group consisting of quartz and sapphire. Since it is made of fiber, it is possible to absorb the deviation of the axis of the optical fiber at the connection point, and it is possible to more accurately measure the temperature of the object to be processed during the etching process. Can be facilitated.

The object temperature detecting device according to claim 5 is
The object temperature detection apparatus according to any one of claims 1 to 4, wherein the contact comprises a cylindrical body having one end closed and contacting the object, and the luminescent agent layer is It is characterized in that it is formed inside one end.

According to the object temperature detecting device of the fifth aspect, since the luminescent agent layer is formed inside the closed end of the contact of the cylindrical body, the luminescent agent layer and the object to be treated are The distance can be reduced, and thus the temperature of the object to be processed during the etching process can be measured more accurately.

The object temperature detection device according to claim 6 is
The object temperature detecting apparatus according to claim 1, wherein the vacuum processing apparatus adsorbs the object and causes the cylindrical body to protrude by a predetermined amount at one end thereof. And a biasing means for biasing the cylindrical body such that the one end is buried by the predetermined amount when the object to be processed is attracted. And

According to a sixth aspect of the present invention, there is provided an apparatus for detecting a temperature of an object to be processed, wherein the cylindrical body is urged so that one end thereof is buried by a predetermined amount when the object to be processed is adsorbed. While the contactor is in contact with the object to be processed in the processing step, the suction table can surely adsorb the object to be processed, and it is possible to prevent etching failure due to floating of the object to be processed.

The object temperature detecting device according to claim 7 is
The object temperature detecting apparatus according to claim 6, wherein the urging means comprises a spring.

According to the object temperature detecting device of the seventh aspect, since the biasing means is composed of a spring, the reproducibility of a predetermined amount of burial is high and the object to be processed is repeatedly processed. The body temperature can be measured accurately.

In order to achieve the above object, a vacuum processing apparatus according to an eighth aspect is characterized by including the object temperature detecting apparatus according to any one of the first to seventh aspects.

According to the vacuum processing apparatus of the eighth aspect, since the object temperature detecting device according to any one of the first to seventh aspects is provided, the temperature of the object during the etching process can be accurately measured. Can be measured.

A vacuum processing apparatus according to a ninth aspect is the eighth aspect.
In the vacuum processing apparatus described above, a plurality of the object temperature detecting devices are provided, and the plurality of object temperature detecting devices are arranged so as to support the object.

According to the ninth aspect of the vacuum processing apparatus, since the plurality of object temperature detecting devices are arranged to support the object to be processed, the attitude of the object to be processed in the etching process is stable, The suction table can surely suck the object to be processed, and it is possible to prevent the etching failure due to the floating of the object to be processed in the etching processing step and to prevent the conveyance deviation.

[0038]

BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, an object temperature detecting apparatus according to an embodiment of the present invention will be described in detail with reference to the drawings.

At this time, the schematic structure of the vacuum container chamber in the vacuum processing apparatus equipped with the object temperature detecting apparatus according to the embodiment of the present invention is the same as the conventional vacuum processing except for the arrangement of the object temperature detecting apparatus described later. It is exactly the same as the device.

FIG. 1 is a sectional view showing a schematic structure of a main part of a vacuum processing apparatus equipped with an object temperature detecting apparatus according to an embodiment of the present invention.

In FIG. 1, the vacuum container chamber 100 is arranged below the object W to be processed, and the object W to be processed is attracted by an electrostatic force, and a temperature monitor 200 (object to be processed) shown in FIG. Chuck 101 with built-in body temperature detection device, and susceptor 102 on which the chuck 101 is mounted
A coolant passage 103 disposed immediately below the object to be processed W inside the susceptor 102, and a processing gas introduction passage 104 for introducing a processing gas from a processing gas supply device (not shown).
With.

FIG. 2 is a sectional view showing a schematic structure of the temperature monitor 200 incorporated in the chuck 101 shown in FIG.

In FIG. 2, the temperature monitor 200 is arranged in a guide hole 201 formed in the thickness direction from the surface 101a of the chuck 101, and has a spherical shape at one end 202a and a flange surface at the other end 202b. -Shaped probe 202 (contactor), a spring 203 (biasing means) that abuts the lower surface of the flange surface of the probe 202 and biases the probe 202 toward the object W to be processed, and light whose both ends are opened. A fiber, one end 204a of which is the probe 202
The other end 202b of the chuck 1 and the other end 204b of the chuck 1
An optical fiber 204 (light receiving means) which is exposed on the back surface 101b of 01, is arranged so that the center axis of the probe 202 and the center of the light receiving surface are aligned, and is fixed to the chuck 101.
A heat insulating container 205 made of polyamide-imide that houses the other end 202b of the probe 202, the spring 203, and one end 204a of the optical fiber 204, and the chuck 101.
The other end 2 of the optical fiber 204 on the back surface 101b of the
04b, and an optical fiber 206 which is arranged so as to face the optical fiber 206 and is connected to a fluorescent temperature measuring device (not shown).
04 and the optical fiber 206, and a quartz column 207 that connects them in series. The temperature monitor 200 may include a columnar body made of sapphire instead of the quartz column 207.

The material of the probe 202 is one selected from the group consisting of aluminum and stainless steel,
As shown in the cross-sectional view of FIG. 3, it is a cylindrical body with one end 202a closed and the other end 202b open, its length is 10 mm, and its outer diameter is 2 mm. In addition, the inner space 2 of the end 202a of the probe 202 is
The fluorescent agent layer 300 is formed on the 02c side.

The probe 202 is movable back and forth along the guide hole 201, and one end 2 is moved by the urging force of the spring 203.
Through 02a, it contacts the object W containing heat during the etching process and receives the heat from the object W in contact. The received heat is transferred to the fluorescent material layer 300, and the temperature of the fluorescent material layer 300 to which the heat is transferred rises. At this time, when the fluorescent agent layer 300 whose temperature has risen is irradiated with light having a wavelength of 957 nm, the fluorescent agent layer 300 irradiated with the light emits light having a wavelength corresponding to the temperature.

The optical fiber 204 has one end 204a for emitting the emitted light from the fluorescent agent layer 300 to the probe 202.
The light is received through the internal space 202c of the above, and the received emitted light is transmitted to the other end 204b. The other end 20 to which the emitted light is transmitted
4b transmits the emitted light to the optical fiber 206 via the quartz column 207, and the optical fiber 20 to which the emitted light is transmitted.
Reference numeral 6 transmits the radiated light to a fluorescence thermometer (not shown).

The fluorescent temperature measuring device to which the radiated light is transmitted measures the temperature of the object W to be processed based on the intensity of the radiated light.

The spring constant of the spring 203 is determined by the chuck 101.
When the object W to be processed is not adsorbed on the surface of the chuck 101, the one end 202a is 0.1 to 0.5 mm from the surface 101a of the chuck 101.
The object W to be processed is projected onto the chuck 101 by a predetermined amount.
When one is adsorbed, one end 202a is set to be buried on the same surface as the surface 101a of the chuck 101.

According to the temperature monitor 200, the probe 202 which receives heat from the object W to be contacted and the probe 2 are used.
02 for urging 02 toward the object W, the fluorescent agent layer 300 formed on the inner space 202c side of the probe 202, and the other end 202b of the probe 202 for receiving the emitted light of the fluorescent agent layer 300. The temperature monitor 200 transfers the heat of the object W to the fluorescent agent layer 300 via the tip 102a of the probe 202 because the optical fiber 204 is disposed so as to face the object and is fixed to the chuck 101. , The transferred heat is converted into radiant light by the fluorescent agent layer 300 according to the heat, and the converted radiant light is converted into the probe 2
Since it can be transmitted to the optical fiber 204 fixed to the chuck 101 through the internal space 202c of 02,
There is no need to move the optical fiber, nor is there a need to split the optical fiber as in conventional temperature sensing devices. as a result,
Since it is not necessary to consider the occurrence of the space between the optical fibers, the temperature monitor 200 of the object W to be processed during the etching process can be accurately measured.

Fluorescent agent layer 300 in temperature monitor 200
Is formed on the back side of the end 202a of the probe 202, the distance between the object W to be processed and the fluorescent agent layer 300 can be reduced, and the loss of heat transferred is hardly generated. The temperature monitor 200 of the target object W during the etching process can be measured more accurately.

Insulation container 205 in temperature monitor 200
Since is made of polyamide-imide, the heat insulation of the spring 203 can be surely performed, and thus the thermal expansion of the spring 203 can be surely prevented. As a result, it is possible to prevent the occurrence of poor contact between the probe 202 and the processing target W due to poor contraction of the spring.

Further, since the inside of the heat insulating container 205 is in a vacuum, it is not necessary to change the gas pressure in the double bellows depending on whether the inside of the vacuum container chamber 100 is atmospheric pressure or vacuum as in the conventional temperature detecting device. Even if the inside of the vacuum chamber 100 is at atmospheric pressure or vacuum, the probe 20
Since the adjustment of the forward / backward movement of 2 can be easily performed by the spring 203, the temperature monitor 200 of the object W to be processed during the etching process can be more accurately measured.

Optical fiber 20 in temperature monitor 200
4 and the optical fiber 206 are the back surface 1 of the chuck 101.
In 01b, since they are connected in series via the quartz column 207, it is possible to absorb the deviation of the axial center line of the optical fiber at the connection point, and thus the temperature monitor 200 of the object to be processed W during the etching process can be more accurately performed. In addition to being able to perform the measurement, the risk of breaking the optical fiber when the chuck 101 is attached and detached can be eliminated, and the temperature monitor 200 can be easily maintained.

The spring constant of the spring 203 in the temperature monitor 200 is such that when one end 202a of the probe 202 does not attract the workpiece W to the chuck 101,
When the object W to be processed is attracted to the chuck 101,
Since the chuck 101 is set so as to be buried on the same surface as the surface 101a, it is possible for the suction table to securely suck the object W while the probe 202 is in contact with the object W in the etching process. Therefore, it is possible to prevent the etching failure due to the floating of the object to be processed W in the etching process.

Probe 202 in temperature monitor 200
Is a material selected from the group consisting of aluminum and stainless steel, so that it is possible to eliminate the possibility that poison gas is generated due to the reaction between CO and the material of the probe 202.

As the probe 202 in the temperature monitor 200 described above, a cylindrical body has been described.
The probe 202 may be in the form of a thin needle, and at this time, the fluorescent agent layer 300 is formed at the other end of the needle opposite to the one end in contact with the object W to be processed. At this time, since the mass of the needle is small, as soon as the needle comes into contact with the object W to be processed, its temperature becomes uniform with the temperature of the object W to be processed, so that the temperature of the object W to be processed can be quickly measured.

FIG. 4 is a perspective view showing a schematic structure of the chuck 101 in FIG.

In FIG. 4, the chuck 101 has five temperature monitors 200a to 200e.
When the object W to be processed is placed on the chuck 101,
The temperature monitors 200b to 200e are arranged at positions corresponding to the center of the object W to be processed, and the temperature monitors 200b to 200e are referred to as “edges” when the object W is placed on the chuck 101. .) At equal intervals in the circumferential direction.

At this time, when “n” is the number of temperature monitors 200, “x” is the protrusion amount of the end 202a, and “w” is the weight of the object W to be processed, the spring constant of the spring 203 is “. It is preferable that “k” satisfies the following equation.

When n ≦ 3, k = w / (3x) (1) When n> 3, k = w / (nx) (2) As a result, the chuck 10 is used in the etching process.
When the object 1 adsorbs the object W to be processed, the probe 202 can always come into contact with the object W to be processed, so that the temperature of the object W to be processed and the temperature of the probe 202 can be made uniform. The temperature of the object W to be processed during the process can be accurately measured.

For example, a φ8 inch wafer has a thickness of 0.675 mm and a specific gravity of 2.33 g / cm ³ , and the protrusion amount of one end 202a of the probe 202 in the process of the φ8 inch wafer is 0.5 mm. Then, the spring constant of the spring 203 is preferably k = 19.8 g / mm from the above equation (2). As a result, when the chuck 101 attracts the object W to be processed in the etching process,
Since the probe 202 can always contact the object W to be processed, and thus the temperature of the object W and the temperature of the probe 202 can be made uniform, the temperature monitor 200 of the object W during the etching process can be used. It can be measured more accurately.

According to the vacuum processing apparatus having the chuck 101, the four temperature monitors 200b to 200e stably support the object W to be processed in a circumferential direction at a position corresponding to the edge of the object W to be processed. Since the objects W are arranged at equal intervals, the posture of the object W to be processed in the etching processing step is stable, etching defects due to floating of the object W to be processed in the etching processing step are prevented, and misalignment of conveyance is prevented. can do. Further, the temperature monitor 200b to e can be used to measure the resistivity by the 4-probe method, etc., whereby the temperature of the object W to be processed can be accurately measured, and resist burning and process shift can be performed. Can be prevented, and the generation of NG wafers can be limited to only one.

Although the chuck 101 described above has five temperature monitors 200, the chuck 101 may have only two temperature monitors 200. At this time, one temperature monitor 200 is preferably arranged at a position corresponding to the center of the object W to be processed, and the other temperature monitor 200 is preferably arranged at a position corresponding to an edge of the object W to be processed.

[0064]

As described above in detail, the first aspect of the present invention is as follows.
According to the processing object temperature detection device described, the light receiving means stationaryly receives the light emitted by the luminescent agent layer according to the heat received from the processing object through the contactor, and therefore the light receiving means It is possible to eliminate the need to move, and thus it is possible to accurately measure the temperature of the object to be processed during the etching process.

According to the object temperature detecting apparatus of the second aspect, since the heat insulating container accommodates the biasing means therein, thermal expansion of the biasing means can be prevented, so that the contactor is covered. The temperature of the object to be processed during the etching process can be more accurately measured because the object to be processed can be surely brought into contact with the object to be processed.

According to the object temperature detecting apparatus of the third aspect, since the inside of the heat insulating container is in vacuum, it is possible to eliminate the need to change the gas pressure depending on whether the inside of the vacuum container chamber is atmospheric pressure or vacuum. Therefore, since it is possible to easily adjust the movement of the contactor, it is possible to more accurately measure the temperature of the object to be processed during the etching process.

According to the object temperature detecting device of the fourth aspect, the light receiving means has a plurality of light beams connected in series via the columnar body made of one material selected from the group consisting of quartz and sapphire. Since it is made of fiber, it is possible to absorb the deviation of the axis of the optical fiber at the connection point, and it is possible to more accurately measure the temperature of the object to be processed during the etching process. Can be facilitated.

According to the object temperature detecting device of the fifth aspect, since the luminescent agent layer is formed inside the closed one end of the contact of the cylindrical body, the luminescent agent layer and the object to be treated are The distance can be reduced, and thus the temperature of the object to be processed during the etching process can be measured more accurately.

According to the object temperature detecting apparatus of the sixth aspect, since the cylindrical body is urged so that one end thereof is buried by a predetermined amount when the object is adsorbed, the etching treatment is performed. In the process, the suction table can surely adsorb the object to be processed while the contactor is in contact with the object to be processed, and it is possible to prevent etching failure due to floating of the object to be processed.

According to the object temperature detecting device of the seventh aspect, since the urging means comprises a spring, the reproducibility of a predetermined amount of burial is high, and the object to be processed is repeatedly processed. The body temperature can be measured accurately.

According to the vacuum processing apparatus of the eighth aspect, since the object temperature detecting device according to any one of the first to seventh aspects is provided, the temperature of the object during the etching process can be accurately measured. Can be measured.

According to the vacuum processing apparatus of the ninth aspect, since the plurality of object temperature detecting devices are arranged to support the object to be processed, the attitude of the object to be processed in the etching process is stable, The suction table can surely suck the object to be processed, and it is possible to prevent the etching failure due to the floating of the object to be processed in the etching processing step and to prevent the conveyance deviation.

[Brief description of drawings]

FIG. 1 is a cross-sectional view showing a schematic structure of a main part of a vacuum processing apparatus including a target object temperature detection apparatus according to an embodiment of the present invention.

FIG. 2 is a sectional view showing a schematic configuration of a temperature monitor 200 built in a chuck 101 in FIG.

3 is a sectional view showing a schematic configuration of a probe 202 in FIG.

FIG. 4 is a perspective view showing a schematic configuration of a chuck 101 in FIG.

[Explanation of symbols]

100 vacuum processing chamber 101 chuck 200 temperature monitor 202 probe 203 spring 204,206 Optical fiber 205 insulated container 207 Quartz pillar 300 fluorescent agent layer

   ─────────────────────────────────────────────────── ─── Continued front page    (72) Inventor Yuichi Yoshida             TBS release, 5-3-6 Akasaka, Minato-ku, Tokyo             Sending Center Tokyo Electron Limited F term (reference) 5F004 BA19 BB18 BB25 BD03 CB09                       CB12

Claims (9)

[Claims] 1. A processing object temperature detecting device for a vacuum processing apparatus, which is provided in a vacuum processing apparatus for processing an object to be processed, for detecting a temperature of the object to be processed, the contact receiving heat from the object to be processed. A child, a biasing means for biasing the contact toward the object to be processed, a luminescent agent layer for emitting light in response to the received heat, and a stationary state for receiving the emitted light. An object-to-be-processed temperature detecting device, comprising: a light receiving unit. 2. The object temperature detecting apparatus according to claim 1, wherein the biasing means is housed in a heat insulating container. 3. The object temperature detecting apparatus according to claim 2, wherein the inside of the heat insulating container is vacuum. 4. The light receiving means comprises a plurality of optical fibers connected in series via a columnar body made of one material selected from the group consisting of quartz and sapphire. The object temperature detection device according to any one of 3 above. 5. The contactor comprises a cylindrical body having one end closed and contacting the object to be processed, and the luminescent agent layer is formed inside the one end.
5. The processing object temperature detection device according to any one of items 4 to 4. 6. The vacuum processing apparatus includes a suction base for adsorbing the object to be processed and accommodating the cylindrical body so that the one end of the cylindrical body protrudes by a predetermined amount, and the urging means is provided. The object temperature detecting apparatus according to claim 5, wherein the cylindrical body is biased so that the one end is buried by the predetermined amount when the object is adsorbed. 7. The object temperature detecting apparatus according to claim 6, wherein the urging means comprises a spring. 8. A vacuum processing apparatus comprising the object temperature detection device according to claim 1. Description: 9. A plurality of said object temperature detecting devices are provided,
9. The vacuum processing apparatus according to claim 8, wherein the plurality of target object temperature detection devices are arranged so as to support the target object.