JP2003232604A - Sensor for surface shape recognition and method of manufacturing the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To inhibit the reduction of the cleanliness of the detected surface of a sensor caused by residuals such as fingerprints remaining on the detected surface in contact with an object of detection like a finger, to improve the damper-proof capability and to inhibit the deterioration of the precision in detecting the surface shape of fingerprints, etc., in the sensor for surface shape recognition such as a fingerprint sensor used for the personal identification, etc. <P>SOLUTION: The sensor for surface shape recognition has a surface protection film 109 made of a material with both hydrophobicity and oil repellency such as fluorocarbon over an insulating protection film 108 on a sensor electrode 107. <P>COPYRIGHT: (C)2003,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a surface shape recognition sensor used for detecting a surface shape having fine irregularities such as a human fingerprint or an animal nose print, and a method for manufacturing the same.

[0002]

2. Description of the Related Art With the spread of the Internet in recent years,
There is great interest in the importance of personal authentication, and biometrics, which measures and evaluates the characteristics of a living body to perform personal authentication, is making great progress as a field of authentication technology. Among them, personal authentication using fingerprints has been actively researched and developed as an authentication means for measuring and evaluating physical characteristics that cannot be easily changed. The fingerprint is read in order to authenticate the person using the fingerprint. There are various methods such as an optical method and a capacitive method for reading the fingerprint. However, except for a part of the optical method, when reading the fingerprint, the finger is brought into contact with the fingerprint sensor surface. It is common.

[0003]

However, in the case of the method in which the finger is brought into contact with the fingerprint sensor surface, fingerprint marks including sebum and the like remain on the sensor. Many users dislike it, and countermeasures against this problem are required (for example, Asahi Shimbun 1
(August 2, 1999, Tokyo company, 3rd edition, evening edition, 4th page article).
In addition, fingerprint marks remaining on the sensor surface can be easily collected by a so-called powder method using aluminum powder, which is used by police forensics, and the fingerprint shape can be reproduced. Measures are necessary from the viewpoint of tampering.

Furthermore, fingerprint fingerprints interfere as sensing noise during further authentication, which causes a problem of degrading the authentication performance of the fingerprint sensor. At present, the only countermeasure against these is to clean or wipe the sensor surface. Such measures have a big problem that the sensor cannot be used continuously.

The present invention has been made to solve the above problems. For example, in a surface shape recognition sensor such as a fingerprint sensor used for personal identification, a detection target such as a finger is To prevent deterioration of cleanliness of the detection surface due to residues such as fingerprint marks remaining on the contact surface, improve tamper resistance, and prevent deterioration of detection accuracy of surface shapes such as fingerprints. To aim.

[0006]

The surface shape recognition sensor according to the present invention is formed so as to cover a plurality of sensor electrodes, each of which is arranged on the same plane of the substrate with insulation separated. An insulating protective film made of an insulating material, a capacitance detecting means for detecting the capacitance formed on the sensor electrode, and a hydrophobic and oil-repellent surface protective film formed on the insulating protective film, such as fluorocarbon. It is a thing. According to this surface shape recognition sensor, the substance existing on the surface of the detection target after the contact of the detection target with the surface protection film is prevented from remaining on the surface of the surface protection film.

In the above surface shape recognition sensor, a part is exposed on the surface of the insulating protection film and the surface protection film so as to be insulated from the sensor electrode and contact the surface of the object to be detected, and is formed on the substrate. The capacitance detection means may include a ground electrode, and the capacitance detection means may be configured to detect the capacitance between the ground electrode and each of the sensor electrodes. The surface shape recognizing sensor has a bump structure protruding from the upper surface of the surface protective film on the substrate around the detection surface formed by a plurality of sensor electrodes and covered with the insulating protective film and the surface protective film. The external connection terminal is formed.

Further, in the method for manufacturing the surface shape recognition sensor according to the present invention, a plurality of sensor electrodes are provided, each of which is insulated and separated on the same plane on the substrate, and formed so as to cover the sensor electrodes. In a method of manufacturing a surface shape recognition sensor, which comprises at least an insulating protective film made of an insulator and a capacitance detecting means for detecting a capacitance formed in a sensor electrode, a specific material (a film having hydrophobicity and oil repellency) For example, a surface protective film made of a specific material is formed on the insulating protective film by applying a coating solution in which fluorocarbon) is dissolved. According to the method for manufacturing the surface shape recognition sensor, the surface protective film made of the specific material is formed on the insulating protective film, and the substance existing on the surface of the detection target after the detection target comes into contact with the surface protective film Is suppressed from remaining on the surface of the surface protective film.

According to another aspect of the present invention, there is provided a method for manufacturing a sensor for recognizing a surface shape, comprising: a plurality of sensor electrodes, each of which is arranged on the same plane of the first substrate and insulated from each other, and covers the sensor electrodes. In a method of manufacturing a surface shape recognition sensor, which comprises at least an insulating protective film made of an insulator formed on the surface of the sensor electrode and a capacitance detection unit for detecting the capacitance formed on the sensor electrode, the surface shape recognition sensor is insulated by a plurality of sensor electrodes. An external connection terminal having a bump structure protruding from the upper surface of the surface protection film is formed on the first substrate around the protection film and the detection surface covered with the surface protection film, and thereafter, a film having hydrophobicity and oil repellency. Specific material (eg fluorocarbon)
A surface protective film made of a specific material is formed on the insulating protective film by applying a coating solution in which the external connection terminal is connected to the connection part formed on the second substrate by a eutectic reaction. (For example, the TAB method is used for connection).
According to this manufacturing method, the external connection terminal and the connection portion are electrically connected. The above-mentioned surface protective film may be peeled off at a molecular level thickness by contact with a detection target.

[0010]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the drawings. <First Embodiment> First, a surface shape recognition sensor according to a first embodiment will be described with reference to FIG. 1A to 1C are process drawings for explaining a method for manufacturing a surface shape recognition sensor according to an embodiment of the present invention. As shown in FIG. 1A, the surface shape recognition sensor according to this embodiment has a semiconductor substrate 101 made of silicon, for example.
A multilayer wiring layer 102 is formed on the wiring 10 and the wiring 10 is formed on the multilayer wiring layer 102.
The sensor electrode 107 made of aluminum is formed via the electrode 4 and the connection electrode 105.

The uppermost layer of the multilayer wiring layer 102 is the insulating film 10.
3, the wiring 104 is formed on the insulating film 103. The wiring 104 is covered with the interlayer insulating film 106, and is connected to the sensor electrode 107 by the connection electrode 105 penetrating the through hole partially provided in the interlayer insulating film 106. The multilayer wiring layer 102 is formed of a plurality of elements (not shown) such as a MOS transistor and a plurality of wirings connecting them, and constitutes a sensor circuit or the like. A sensor electrode 107 is connected to these circuits via a wiring 104 and a connection electrode 105.

After the connection electrode 105 is formed, the sensor electrode 107 is formed by, for example, forming an aluminum film with a thickness of about 0.5 μm on the entire area of the interlayer insulating film 106 by a sputtering method, and the film is formed by known photolithography. It is formed by processing with the technique and the etching technique. After the sensor electrode 107 is formed in this way, as shown in FIG. 1B, an insulating protective film 108 that covers the sensor electrode 107 and serves as a capacitance film is formed on the interlayer insulating film 106. For example,
The insulating protective film 108 can be formed by forming a polyimide film made of a polyimide material in the CRC8300 series manufactured by Sumitomo Bakelite Co., Ltd. to a film thickness of about 1 μm by a coating method, and heating the film to about 300 ° C. to cure it.

As described above, the process up to the insulating protective film 108 is the same as the conventional one, and in this embodiment, as described in detail below,
A fluororesin film (surface protection film) 109 made of a fluorocarbon material (specific material) was provided on the insulating protection film 108 (FIG. 1C). As the fluorocarbon material, for example, AF1600 (Teflon (R)) manufactured by DuPont can be used. Hereinafter, the fluororesin film 1
A method of forming 09 will be described. First, AF1600
Is dissolved in Fluorinert FC75 (solvent) manufactured by 3M to prepare a saturated solution of AF1600 at room temperature of 23.5 °. This saturated solution is hereinafter referred to as a Teflon (R) saturated solution.

As described above, when a saturated solution is prepared, the saturated solution is spin-coated on the insulating protective film 108 and heated at 170 ° C. for 5 minutes in the air atmosphere, and then for 1 hour in the nitrogen atmosphere. If annealing is performed at 300 ° C., as shown in FIG.
Can be formed. The semiconductor substrate 1 which is a semiconductor wafer
On 01, a plurality of sensor chips (sensors for surface shape recognition) are simultaneously formed, and a detection surface composed of a plurality of sensor electrodes 107 is formed on each sensor chip. It is protected by the fluororesin film 109, and FIG. 1 shows a part thereof.

By the way, on the surface of the sensor chip, a terminal for external connection is formed together with the detection surface, and when the fluororesin film is formed only by spin coating as described above, the terminal portion is also covered with the fluororesin film. Become. The fluororesin film formed on the terminal portion will be described below. First, the following samples were prepared. Teflon (R) saturated solution and Fluorinert FC75 (solvent) 3: 1 or 1
The coating solutions mixed in a ratio of 1 to 1 were spin-coated on substrates having various bases at 1000 rpm, and then heated at 170 ° C. for 5 minutes in the air atmosphere, and then in a nitrogen atmosphere. Annealing at 300 ℃ for
A Teflon (R) film is formed. The thickness of each Teflon (R) film thus formed is determined by depth direction analysis by Auger electron spectroscopy, and the results are shown in Table 1 below.

[0016]

From Table 1 above, first, when the mixing ratio is different,
It can be seen that the coating film thickness differs greatly. In Table 1, the coating rotation speed is set to 1000 rpm, but even if the coating rotation speed is varied between 500 and 5000 rpm, there is almost no change in the film thickness. Next, it can be seen from Table 1 that there is a large difference in the film thickness applied depending on the material of the base. In particular, it can be seen that not much film is formed on gold. The molecular and atomistic details that cause this difference are not clear, but it is presumed that it is due to the difference in wettability between the saturated solution of Teflon (R) and the base and the difference in surface energy.

In addition to the above tests, a test of the adhesion of the formed coating film (Teflon (R) film) to the base was conducted by the Scotch tape test. First, the coating film formed on the base gold was peeled off. However, in a coating film on a substrate using another material as a base, it is fixed without peeling. Therefore, it can be seen that on gold, the coating film thickness is thin and the adhesion is small.

The fact that the adhesion of the Teflon (R) film is small on gold can be seen from the following experimental facts. After the above-mentioned saturated Teflon (R) solution was coated on a substrate having a gold underlayer, the electrical resistance of the substrate through the coating film was measured using a tester. It is possible to measure resistance despite the fact. On the other hand, when a Teflon (R) film is formed by coating on a silicon substrate which normally exhibits a resistance of several kΩ, the measured resistance becomes infinite.

These results show that the Teflon (R) film formed on gold is easily peeled off by the contact of the probe of the tester, and the metal-metal contact with the probe becomes possible. The properties of this Teflon (R) film are the same even when the base is stainless steel, and the Teflon (R) film can be formed only with weak adhesion on a substrate on which stainless steel is the base. However, the characteristics of the Teflon (R) film as described above will be described below with respect to the formation of the fluororesin film 109 in the surface shape recognition sensor in the present embodiment as shown in FIG. 1C. Very useful to.

The above-mentioned surface shape recognition sensor (sensor chip) is provided with a plurality of sensor electrodes 107 arranged in a matrix. For example, a plurality of sensor electrodes 107 are arranged at intervals of 150 μm, and the sensor chips are detected by these. Forming a surface. In addition, the insulating film 1 on the semiconductor substrate 101
As described above, the sensor circuit is formed under 03, and the capacitance formed in each sensor electrode 107 is detected. The sensor circuit is prepared, for example, for each sensor electrode 107, and the output of each sensor circuit is processed by a processing unit configured by another circuit (not shown), and each sensor electrode 10 is processed.
The capacity formed in 7 is output as image data that has been converted into light and shade.

As shown in FIG. 2, the sensor chip has a multi-layer wiring layer 102 in a predetermined area such as a peripheral portion of the chip.
304 to be connected to any circuit formed in
External connection electrode 307 to be connected to the via the connection electrode 305
And a bump (external connection terminal) 310 made of gold on the external connection electrode 307, and the bump 310 is connected to the connection portion of the mounting board to be mounted on the mounting board.
In this case, the output image data described above is output to the mounting substrate side via the external connection electrode 307-bump 310. Therefore, when the fluororesin film 109 is formed on the insulating protective film 108 by spin coating, the fluororesin film 10 is also formed on the bumps 310 formed on the sensor chip.
9 will be formed.

However, as described above, the Teflon (R) film can be formed on gold only in a state where the adhesion is extremely low and in a thin state. Therefore, even if the fluororesin film 109 is formed by spin coating, almost no film is formed on the bumps 310. For example,
A Teflon (R) solution prepared by diluting a Teflon (R) saturated solution at a mixing ratio of 1: 1 on a wafer on which a plurality of sensor chips having the insulating protective film 108 formed at the same time are mixed is used.
A Teflon (R) film (fluorine resin film 109) is formed by coating at 00 rpm and heating at 170 ° C. in an air atmosphere and annealing at 300 ° C. for 30 minutes in a nitrogen atmosphere.

As a result, a film thickness of about 200 to 3 is formed on the insulating protective film 108 on which the plurality of sensor electrodes 107 are arranged.
The Teflon (R) film having a thickness of 00 nm is formed in a state of good adhesion, and the Teflon (R) film is hardly formed on the bump 310. Further, even if the Teflon (R) film is formed on the bump 310, as shown in Table 1, this film thickness is about 10 nm and is in a state of being easily peeled off.

Therefore, even if the fluororesin film 109 is formed by spin-coating the Teflon (R) solution, it is not necessary to separate the fluororesin film 109 from the bumps 310, and the electrical connection can be established. The sensor chip can be mounted on the mounting board. For example, the bump 310 is connected to the inner lead used for TAB mounting in a short time by a eutectic reaction. At this time, the temperature applied is 420 ° C. although it is instantaneous, and it is considered that the thin fluororesin film 109 on the bump 310 is removed by this heating.

Actually, in the continuity test performed by bringing the test probe pins into contact with the bumps 310 for external connection on the wafer on which the above-mentioned plurality of sensor chips are formed (without cutting the chips individually), the bumps 80% of the chips were determined to be defective due to contact failure at the 310 portion, but when the chips were individually cut out and TAB mounted, all the chips were determined to be good. This means that bump 31
It means that the thin fluororesin film 109 on 0 was removed at the time of TAB mounting.

Next, the effect of the fluororesin film 109 formed by coating as described above will be described. In the present embodiment, the detection surface of the sensor chip is covered with the fluororesin film 109, so that even if a finger is brought into contact with the detection surface, dirt is unlikely to adhere and tamper resistance is improved. This effect is derived from the fact that the fluororesin film 109 easily repels water existing on the surface of the finger.
Further, the fluororesin film 109 is considered to be peeled off at the molecular level, and this is also considered to be due to the above effects being obtained.

As described above, the fluororesin film 10
Since No. 9 is peeled off at the molecular level, it becomes thinner as the sensor chip is used, and eventually the above-mentioned effects are not exhibited. As a durability test of a fingerprint sensor having a fluororesin film formed under the above-mentioned conditions, a square small plate was tested at 1 MPa.
A test of pressing the surface of the sensor chip under the conditions was performed, and it was confirmed that the effect of removing the residual fingerprint disappeared after about 5000 pressings. However, it goes without saying that this durability test is an accelerated test as compared with actual finger contact, and sufficient durability is ensured in the range of actual use.

Furthermore, the selective coating and the fingerprint trace removal characteristics of the fluororesin film as described above are not limited to the case of using Teflon (R). For example, similar effects can be obtained by using a thin film having hydrophobicity and oil repellency like another fluorocarbon type thin film such as Cytop manufactured by Asahi Glass Co., Ltd. Even in this thin film,
It is considered that a phenomenon of peeling at a molecular level thickness occurs due to contact with a finger (detection target). Therefore, even in this thin film, it is considered that the effect of peeling at the molecular level can be obtained.

As described above, by using the fluororesin film and using the TAB method as the mounting method, it is possible to properly maintain the surface condition of the surface shape recognition sensor. Is the greatest feature of the form. Needless to say, it is clear that the problem of being easily affected by oil or water from a human finger such as a fingerprint is solved.

<Second Embodiment> Next, another embodiment of the present invention will be described. FIG. 3 is a process diagram for explaining a method of manufacturing the surface shape recognition sensor (sensor chip) in this embodiment. First, Fig. 3
The state shown in (a) will be described. First, on the semiconductor substrate 201, a multilayer wiring layer 202 made of another integrated circuit such as a sensor circuit is formed similarly to the above-described embodiment, and the uppermost layer of the multilayer wiring layer 202 is covered with an insulating film 203 and is insulated. Wirings 204 and 205 are formed on the film 203.

The wirings 204 and 205 are covered with an interlayer insulating film 208 and are connected to connection electrodes 206 and 207 penetrating a through hole partially provided in the interlayer insulating film 208. Each wiring and connection electrode may be formed by patterning by a known film forming technique, photolithography technique, or etching technique. An insulating film 209 is formed on the interlayer insulating film 208 so that upper central portions of the connection electrodes 206 and 207 are exposed.

The insulating film 20 is formed as described above.
A copper film having a film thickness of approximately 0.1 μm is formed on the exposed electrode 9 and the exposed connection electrodes 206 and 207 by, for example, a sputtering method. Then, on the connection electrode 206, the connection electrode 20
A resist pattern having an opening portion having a square shape in plan view with the portion 6 at the center is formed on the insulating film 209,
A gold film having a film thickness of about 1 μm is formed on the copper film exposed in the opening by electrolytic plating or the like.

Next, the resist pattern is removed,
A resist pattern having a grid-shaped opening extending over the plurality of connection electrodes 207 is newly formed, and a gold film having a thickness of about 3 μm is formed on the copper film exposed in the grid-shaped pattern by electrolytic plating or the like. And the resist pattern is removed.

As a result, a gold pattern having a square shape in plan view is formed on the connection electrode 206, and a grid-shaped gold pattern is formed continuously on the plurality of connection electrodes 207. Using the gold pattern thus formed as a mask, the lower copper film is etched and removed,
The lattice-shaped portion and the square-shaped portion in plan view are electrically separated.

As a result, a square sensor electrode 211 connected to the connection electrode 206 and a ground electrode 212 connected to the connection electrode 207 are formed on the insulating film 209. As shown in the plan view of FIG.
On the sensor chip, the sensor electrodes 211 are separately formed, and the grid-like ground electrodes 212 are formed so as to arrange the sensor electrodes 211 in the mass.

As described above, the sensor electrode 21
1. After forming the ground electrode 212, as shown in FIG. 3C, the insulating protective film 21 serving as a capacitance film is formed on the insulating film 209.
3 is formed. The insulating protective film 213 is formed on the sensor electrode 211.
And the upper portion of the ground electrode 212 is formed to be exposed. The insulating protective film 213 can be formed, for example, by forming a polyimide film made of a polyimide material in the CRC8300 series manufactured by Sumitomo Bakelite Co., Ltd. to a film thickness of about 3 μm by a coating method, and heating this to about 300 ° C. to cure it. .

As described above, the process up to the insulating protective film 213 is almost the same as the conventional one, and in this embodiment, as described below, the fluororesin film 214 made of a fluorocarbon material is provided on the insulating protective film 213. I chose A Teflon (R) saturated solution was prepared in the same manner as in the above-described embodiment, spin-coated on the insulating protective film 213 and heated at 170 ° C. for 5 minutes in the air atmosphere, and then in a nitrogen atmosphere. By performing annealing at 300 ° C. for 1 hour, the fluororesin film 214 can be formed.

At this time, as described above, since the fluororesin film has a thin coating film thickness and a small adhesion on gold,
A fluororesin film 214 is formed on the ground electrode 212 made of gold.
Are hardly formed. A plurality of sensor chips (sensors for surface shape recognition) are simultaneously formed on a semiconductor substrate 201 which is a semiconductor wafer, and a detection surface composed of a plurality of sensor electrodes 211 is formed on each sensor chip. The detection surface is the insulating protective film 213 and the fluororesin film 21.
4 is protected by FIG. 4, and FIG. 3 shows a part of this.

A sensor circuit (not shown) is connected to each of the ground electrode 207 and the sensor electrode 211 via the above-mentioned wiring 203 and the like. This sensor circuit detects the capacitance formed between the ground electrode 207 and each sensor electrode 211 and outputs a signal corresponding to these. The output of each sensor circuit is, for example, the semiconductor substrate 2
The image data is processed by a processing unit (not shown) composed of the integrated circuit formed by 01, and the processing unit generates image data in which the capacitance formed in each sensor electrode 211 is converted into light and shade.

According to the surface shape recognition sensor shown in FIG. 3 formed as described above, the detection surface of the sensor chip is covered with the fluororesin film 214 as in the above-described embodiment. , Even if you touch your finger on the detection surface,
Dirt is less likely to adhere and tamper resistance is improved. Also in the present embodiment, as shown in FIG. 4, a wiring 404 connected to any circuit formed in the multilayer wiring layer 202 is provided in a predetermined region such as a chip outer peripheral portion via a connection electrode 406. An external connection electrode 411 for connection is provided,
Even if the bump 415 made of gold is provided on the external connection electrode 411, the fluororesin film 2 is formed on the bump 415.
Almost no 14 is formed.

Also in this embodiment, even if a thin film having hydrophobicity and oil repellency is used like another fluorocarbon type thin film such as Cytop manufactured by Asahi Glass Co., Ltd., selective coating and fingerprinting are performed. Similar effects such as trace removal characteristics can be obtained. Further, when a photocatalyst such as titania is added to the fluororesin film, it is effective in further improving the clean state and removing the residual fingerprints due to the antibacterial action and the fat and oil decomposition action.

[0043]

As described above, according to the present invention,
A surface protective film having hydrophobicity and oil repellency was provided on the insulating protective film on the sensor electrode. As a result, it is possible to prevent the substance existing on the surface of the detection target from remaining on the surface of the surface protection film after the detection target comes into contact with the surface protection film. Therefore, according to the present invention, for example, in a surface shape recognition sensor such as a fingerprint sensor used for personal identification, detection by a residue such as a fingerprint mark remaining on a detection surface with which a detection target such as a finger contacts It is possible to obtain the excellent effects that the deterioration of the cleanliness of the surface is suppressed, the tamper resistance is improved, and the deterioration of the detection accuracy of the surface shape such as a fingerprint can be suppressed.

[Brief description of drawings]

FIG. 1 is a process drawing showing a method of manufacturing a surface shape recognition sensor according to an embodiment of the present invention.

FIG. 2 is a sectional view schematically showing a partial configuration of a surface shape recognition sensor according to an embodiment of the present invention.

FIG. 3 is a process drawing showing the method of manufacturing the surface shape recognition sensor according to another embodiment of the present invention.

FIG. 4 is a sectional view schematically showing a partial configuration of a surface shape recognition sensor according to another embodiment of the present invention.

[Explanation of symbols]

101 ... Semiconductor substrate, 102 ... Multilayer wiring layer, 103 ... Insulating film, 104 ... Wiring, 105 ... Connection electrode, 106 ... Interlayer insulating film, 107 ... Sensor electrode, 108 ... Insulation protective film, 1
09 ... Fluororesin film (surface protective film), 304 ... Wiring, 3
05 ... connection electrode, 310 ... bump (external connection terminal).

   ─────────────────────────────────────────────────── ─── Continued front page    (72) Inventor Katsuyuki Machida             2-3-1, Otemachi, Chiyoda-ku, Tokyo             Inside Telegraph and Telephone Corporation (72) Inventor Tsutomu Kuraki             2-3-1, Otemachi, Chiyoda-ku, Tokyo             Inside Telegraph and Telephone Corporation F term (reference) 2F063 AA03 AA43 BA29 BA30 BD05                       BD11 CA08 CA31 CA32 DA02                       DD07 HA01 HA10                 4C038 FF01 FG00                 5B047 AA25 BA02 BB10 BC14 BC30

Claims (12)

[Claims] 1. A plurality of sensor electrodes, each of which is arranged on the same plane of the substrate while being insulated and separated, an insulating protective film made of an insulator formed so as to cover the sensor electrodes, and formed on the sensor electrodes. A surface shape recognizing sensor, comprising: a capacitance detecting means for detecting the generated capacitance; and a surface protective film formed on the insulating protective film and having hydrophobicity and oil repellency. 2. The surface shape recognition sensor according to claim 1, wherein the surface protective film is peeled off at a molecular level thickness by contact with a detection target. 3. The surface shape recognition sensor according to claim 1, wherein a part of the insulating protective film and the surface protective film is separated from the sensor electrode so as to contact the surface of the detection target. A ground electrode exposed on the surface of the substrate and formed on the substrate, and the capacitance detecting means is configured to detect a capacitance between the ground electrode and each of the sensor electrodes. Sensor for surface shape recognition. 4. The surface shape recognition sensor according to claim 1, further comprising: a detection surface formed by a plurality of the sensor electrodes and covered with the insulating protective film and the surface protective film. An external connection terminal having a bump structure formed on the substrate around the detection surface and protruding from the upper surface of the surface protective film. 5. The surface shape recognition sensor according to claim 1, wherein the surface protective film is made of fluorocarbon. 6. A plurality of sensor electrodes, each of which is arranged on the same plane of the substrate while being insulated from each other, an insulating protective film made of an insulator formed so as to cover the sensor electrodes, and formed on the sensor electrodes. A method for manufacturing a sensor for recognizing a surface shape, which comprises at least a capacitance detecting means for detecting the generated capacitance, wherein the insulating protective film is formed by applying a coating liquid in which a specific material to be a film having hydrophobicity and oil repellency is dissolved A method for manufacturing a sensor for recognizing a surface shape, comprising a step of forming a surface protective film made of the specific material on the surface. 7. The method for manufacturing a surface shape recognition sensor according to claim 6, wherein the surface protective film is separated at a molecular level thickness by contact with a detection target. Manufacturing method for automobile sensor. 8. The method for manufacturing a surface shape recognition sensor according to claim 6, wherein the specific material is made of fluorocarbon. 9. A plurality of sensor electrodes, each of which is arranged on the same plane of the first substrate and insulated from each other, an insulating protective film made of an insulator formed so as to cover the sensor electrodes, and the sensor. A method of manufacturing a sensor for recognizing a surface shape, comprising at least a capacitance detecting means for detecting a capacitance formed on an electrode, wherein a detection formed by a plurality of the sensor electrodes and covered with the insulating protective film and the surface protective film is performed. Forming an external connection terminal having a bump structure protruding from the upper surface of the surface protective film on the first substrate around the surface, and a film having hydrophobicity and oil repellency after the external connection terminal is formed. Forming a surface protective film made of the specific material on the insulating protective film by applying a coating liquid in which the specific material is dissolved, and the external connection to the connecting portion formed on the second substrate. And a mounting step of connecting terminals by a eutectic reaction. 10. The method for manufacturing a surface shape recognition sensor according to claim 9, wherein the surface protective film is peeled off at a molecular level thickness by contact with a detection target. Manufacturing method for automobile sensor. 11. The method for manufacturing a surface shape recognition sensor according to claim 9 or 10, wherein in the mounting step, the external connection terminal is connected to the connection portion by a TAB method. Sensor. 12. The surface shape recognition sensor according to claim 9, wherein the specific material is made of fluorocarbon. Manufacturing method.