JP2003229432A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2003229432A5 JP2003229432A5 JP2002344069A JP2002344069A JP2003229432A5 JP 2003229432 A5 JP2003229432 A5 JP 2003229432A5 JP 2002344069 A JP2002344069 A JP 2002344069A JP 2002344069 A JP2002344069 A JP 2002344069A JP 2003229432 A5 JP2003229432 A5 JP 2003229432A5
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002344069A JP4401647B2 (ja) | 2001-11-30 | 2002-11-27 | 半導体装置の作製方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001-367612 | 2001-11-30 | ||
| JP2001367612 | 2001-11-30 | ||
| JP2002344069A JP4401647B2 (ja) | 2001-11-30 | 2002-11-27 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2003229432A JP2003229432A (ja) | 2003-08-15 |
| JP2003229432A5 true JP2003229432A5 (de) | 2006-01-12 |
| JP4401647B2 JP4401647B2 (ja) | 2010-01-20 |
Family
ID=27759597
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002344069A Expired - Fee Related JP4401647B2 (ja) | 2001-11-30 | 2002-11-27 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4401647B2 (de) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7133737B2 (en) | 2001-11-30 | 2006-11-07 | Semiconductor Energy Laboratory Co., Ltd. | Program for controlling laser apparatus and recording medium for recording program for controlling laser apparatus and capable of being read out by computer |
| EP1329946A3 (de) | 2001-12-11 | 2005-04-06 | Sel Semiconductor Energy Laboratory Co., Ltd. | Herstellungsverfahren von Halbleitervorrichtungen mit Laserkristallisationsschritt |
| JP2004103628A (ja) * | 2002-09-05 | 2004-04-02 | Hitachi Ltd | レーザアニール装置及びｔｆｔ基板のレーザアニール方法 |
| JP5159021B2 (ja) * | 2003-12-02 | 2013-03-06 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP2005210103A (ja) * | 2003-12-26 | 2005-08-04 | Semiconductor Energy Lab Co Ltd | レーザ照射装置、レーザ照射方法及び結晶質半導体膜の作製方法 |
| JP2006066908A (ja) | 2004-07-30 | 2006-03-09 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| JP5030130B2 (ja) * | 2005-10-19 | 2012-09-19 | 株式会社日本製鋼所 | 薄膜材料の結晶化装置 |
| CN102097368A (zh) * | 2010-11-08 | 2011-06-15 | 昆山工研院新型平板显示技术中心有限公司 | 一种低温多晶硅薄膜晶体管阵列基板的制造方法 |
| JP2012099834A (ja) * | 2011-12-19 | 2012-05-24 | Fuji Electric Co Ltd | Ｍｏｓゲート型炭化珪素半導体装置の製造方法 |
| US8501638B1 (en) * | 2012-04-27 | 2013-08-06 | Ultratech, Inc. | Laser annealing scanning methods with reduced annealing non-uniformities |
| KR20140114542A (ko) | 2013-03-18 | 2014-09-29 | 삼성디스플레이 주식회사 | 레이저빔 어닐링 장치 및 그 제어방법 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000243970A (ja) * | 1999-02-24 | 2000-09-08 | Matsushita Electric Ind Co Ltd | 薄膜トランジスタとその製造方法及びそれを用いた液晶表示装置とその製造方法 |
| JP2000277450A (ja) * | 1999-03-24 | 2000-10-06 | Matsushita Electric Ind Co Ltd | レーザアニール装置及びこの装置を用いた薄膜トランジスタの製造方法 |
| JP3897965B2 (ja) * | 1999-08-13 | 2007-03-28 | 株式会社半導体エネルギー研究所 | レーザー装置及びレーザーアニール方法 |
-
2002
- 2002-11-27 JP JP2002344069A patent/JP4401647B2/ja not_active Expired - Fee Related