JP2003227847A - Probe needle, probe card, inspection device and method using the probe needle - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a probe needle and a probe card for preventing the shift of contact point of needle tip with an electrode due to vibration from the outside and a curve of an inspection object, and an inspection device and method using the probe needle. <P>SOLUTION: The probe needle 4 has conductivity that a needle tip 4b contacts an electrode P of the inspection object in a state supported at one end route part 4a and forms a bend part (spiral bend) 4c in solid structure between the route part 4a and the needle tip 4b. <P>COPYRIGHT: (C)2003,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an inspection apparatus and method for contacting a probe needle to an electrode formed on an inspection object and inspecting the electrical characteristics of the inspection object by a tester connected to the probe needle. The present invention relates to a probe needle used for the inspection, and further to a probe card having a plurality of such probe needles attached in a predetermined arrangement. More specifically, the present invention relates to a probe needle capable of following the displacement of the electrode position in any direction during inspection without changing the contact position.

[0002]

2. Description of the Related Art FIG. 18 is a diagram for explaining an outline of an inspection using a conventional probe needle. The probe needle 21 is linear, and one end (root portion) of the probe needle 21 is fixed to the manipulator 3 and is electrically connected to a tester (not shown). The material of the probe needle 21 is, for example, tungsten. The manipulator 3 can be moved in a horizontal direction and a vertical direction by, for example, a knob operation by an operator. Below the manipulator 3, supported by a support base (not shown),
A semiconductor wafer W on which a large number of semiconductor chips T are formed is arranged. Although only one set of the probe needle 21 and the manipulator 3 is shown in the drawing, for example, the gate, the source, the drain of the MOS transistor formed on the semiconductor chip T and the wafer side are connected to each other 4 They are arranged in pairs.

In the inspection, first, the manipulator 3
By moving the probe needle 21 together, the needle tip is positioned and pressure-contacted with the electrode (pad) of the semiconductor chip T to be inspected. In this state, an electric signal is exchanged between the tester and the electrode via the probe needle 21.

Since the conventional probe needle 21 has a linear structure, it is easily affected by external vibration during inspection.
The contact position between the needle tip and the electrode may be displaced, or in some cases, the needle tip may come off the electrode. When the contact position of the needle tip is displaced, the contact resistance at the contact portion between the probe needle 21 and the electrode fluctuates, and noise is mixed in the detected current, for example. When the tip of the needle comes off the electrode, it is naturally impossible to acquire the measurement data. Recently, for example, a minute current of femtoampere level has been used as a detected current, and even a minute noise due to a slight vibration greatly affects a measured value. In particular, when the semiconductor wafer W is heated and subjected to a heat load for a long time for measurement, in addition to the influence of external vibration, the semiconductor wafer W may be thermally deformed (warped) to prevent the needle from moving. The above-mentioned positional displacement and detachment from the electrode are likely to occur. Particularly, in the electrode located on the peripheral side of the semiconductor wafer W,
The positional displacement associated with the warp of the wafer W was large, and the needle tip frequently came off from the electrode. Also, in a destructive test in which the element is gradually destroyed over a long period of time to test the durability, it is not possible to re-measure even if the needle tip comes off the electrode in the middle, and the measured data up to the middle and required Time wasted.

On the other hand, as shown in FIG. 19, in order to suppress the displacement of the needle tip, the probe needle 22 is bent in the shape of a dogleg in the middle so that the probe needle 22 has a spring property. There is.

[0006]

However, with a structure in which only one portion is bent, the needle tip can only have a followability in a certain limited direction, and the needle tip is not affected by vibration or wafer warp. The followability was not sufficient. In particular, in FIG. 19, almost no followability in the depth direction (arrow A direction) can be expected. In addition, it is difficult and time-consuming to calculate the displacement amount and displacement direction of the needle tip in advance and align the needle tip position to prevent it from coming off the electrode. It is not possible to prevent fluctuations in contact resistance due to.

Japanese Patent Laid-Open No. 2000-314746 discloses a structure in which a manipulator supporting a probe needle is provided with a spring mechanism. However, also in this publication, as in the above-mentioned conventional example, the probe needle has only the followability in only a limited direction, and further, since the manipulator has a spring property, the needle itself has Compared with the structure that has springiness, it causes an increase in the number of parts,
The structure becomes complicated. Further, in the configuration of this publication, since the probe needle is retracted so as to offset the advance amount of the probe needle due to overdrive at the time of pressure contact with the pad, the needle tip is once displaced on the pad and then the original contact is made. Since it moves to a point, it cannot prevent fluctuations in contact resistance.

The present invention has been made in view of the above problems, and an object thereof is to prevent displacement of the contact position of the needle tip with the electrode due to external vibration or warpage of the inspection object. An object of the present invention is to provide an inspection device and method using a probe needle.

[0009]

The probe needle of the present invention comprises:
A bent portion having a three-dimensional structure is formed between the cantilever-supported root portion and the needle tip.

The bent portion of the three-dimensional structure is a bent portion having a three-dimensional spatial extension. Considering the case where the bent portion of such a three-dimensional structure is illustrated on the paper surface, the structure has a spread in the depth direction in addition to the expansion in the paper surface direction (planar direction). As an example, a bent portion having a three-dimensional structure formed in a loop shape such as a torsion coil spring or a spiral bent portion can be given. Looped or spiral bends
It is easy to deform in any direction and easy to process. Especially, the spiral bending part that is more easily deformed,
It is effective to apply the probe needle to a material that is hard and difficult to deform. Further, if the bent portion is made thinner than the root portion, the bent portion can be deformed more easily. Since the bent portion as described above acts as a spring that can be deformed in any direction, it allows the needle tip to follow any direction due to the three-dimensional displacement of the electrode, and the needle tip always makes stable contact with the electrode. Can be kept. Further, by covering the portion other than the bent portion of the probe needle with an insulating material, it is possible to suppress the influence of external noise such as electromagnetic waves on the measured value. The portion to be covered may be the root portion, the portion between the bent portion and the needle tip, or only one of them.

The probe card of the present invention comprises a plurality of probe needles each having a bent portion having a three-dimensional structure as described above,
It is arranged corresponding to the electrode of the inspection object and attached to the support.

When a plurality of probe needles are arranged at a high density, a bent portion having a vertically long shape and a shape that suppresses the lateral spread is used to avoid mutual interference due to the deformation of each probe needle. it can.

The inspection apparatus of the present invention comprises a probe needle having a bent portion having the above-described three-dimensional structure, a support base for supporting an inspection object, a support tool for supporting a root portion of the probe needle, and a root thereof. And a tester electrically connected to the section. The structure of the support base may be any structure as long as it can stably support the inspection target so that it does not move. For example, a vacuum chuck mechanism or an adhesive sheet may be used. The probe needle is electrically connected to the tester through wiring formed on the support tool whose root portion is supported, a cable connecting the support tool and the tester, or the like.

In the inspection method of the present invention, the needle tip is brought into contact with the electrode of the inspection object while the base portion of the probe needle having the bent portion having the above-described three-dimensional structure is cantilevered and supported. Inspect the electrical characteristics of the inspection object.

[0015]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below.

(First Embodiment) FIG. 1 is a schematic view of an inspection apparatus 1 according to the first embodiment. In the present embodiment, for example, a large number of semiconductor chips formed on the semiconductor wafer W will be described as the inspection object. The inspection device 1 is
Mainly, a support base 5 for supporting the semiconductor wafer W, a probe needle 4, a manipulator 3 as a support tool for supporting the probe needle 4 in a cantilever manner, a tester 2 electrically connected to the probe needle 4, and a semiconductor It comprises a heating / cooling device 6 for heating or cooling the wafer W, and a controller 7 of the heating / cooling device 6.

The support 5 is connected to a vacuum system (not shown), and the semiconductor wafer W is vacuum chucked on the support 5. Under the control of the controller 7, the heating / cooling device 6 heats (cools) the heater (or cooling means) built in the support base 5, and at the time of heating, the semiconductor wafer W on the support base 5 is radiated from the heater. Is heated. Although the details of the probe needle 4 will be described later, the root portion 4 thereof
a is fixed to the manipulator 3 and is electrically connected to the tester 2. The manipulator 3 can be moved in a horizontal direction and a vertical direction by a manual operation (for example, a knob operation), and the position of the probe needle 4 can be finely adjusted. Although only one set of the probe needle 4 and the manipulator 3 is shown in the drawing, for example, a gate, a source, a drain of a MOS transistor formed on the semiconductor chip T,
Further, four sets are arranged so as to contact the wafer side respectively.

Next, the probe needle 4 of the present embodiment will be described with reference to FIGS. 2 shows the probe needle 4
3 is a top view, FIG. 3 is a side view, and FIG. 4 is a perspective view.

The probe needle 4 has a root portion 4a fixed to the manipulator 3 and an electrode (pad) P of the semiconductor chip.
The bent portion 4c of the three-dimensional structure between the needle tip 4b and
Is formed. Specifically, the bent portion 4c is formed in a spiral shape. In the illustrated example, for example, a two-stage spiral structure is used, and the diameter of the loop on the upper side is larger than that of the loop on the lower side. The root portion 4a, the bent portion 4c, and the needle tip 4b are integrally connected. As a manufacturing method, the bent portion 4c can be easily formed by winding a linear round rod-shaped probe needle around, for example, a mandrel.

The material of the probe needle 4 is, for example, tungsten. As an example of the dimensions, the thickness of the root portion 4a is about 400 μm, and gradually becomes thinner toward the needle tip 4b, and the thickness of the needle tip 4b is about 30 μm. Therefore, the bent portion 4c is thinner than the root portion 4a, which makes the bent portion 4c easier to deform. Bend 4
c is formed at a position about 10 mm from the needle tip 4b. The two loops forming the two-stage helix are separated by about 2-3 mm without contact. The inclination of the helix (angle θ in FIG. 1) with respect to the straight line portion between the bent portion 4c and the needle tip 4b is, for example, about 20 ° to 40 °.

In the inspection using the probe needle 4 and the inspection device 1 configured as described above, first, the probe tip 4 is moved by moving the probe needle 4 together with the manipulator 3.
b is positioned and pressed into contact with the electrode P of the semiconductor chip T to be inspected. That is, at the initial alignment, the bent portion 4c is slightly compressed from its natural state. In this state,
An electrical signal is exchanged between the tester 2 and the electrode P via the probe needle 4.

According to the present embodiment, the semiconductor wafer W
The needle tip 4b can flexibly follow the positional displacement of the electrode P due to the thermal deformation. For example, as shown in FIG. 6, when the electrode P formed in the central portion of the semiconductor wafer W is displaced almost directly above, the bent portion 4c shrinks almost immediately above, as indicated by the alternate long and short dash line. As a result, the needle tip 4b follows the positional displacement of the electrode P without changing the contact position with the electrode P. The root portion 4a is fixed to the manipulator 3, and only the bent portion 4c is deformed as shown by the alternate long and short dash line.

Similarly, as shown in FIGS. 7 and 8, the electrode P formed on the peripheral portion of the semiconductor wafer W is displaced obliquely upward (a direction in which the upper direction, the left-right direction, and the depth direction are combined). On the other hand, the bent portion 4c is deformed so as to be inclined and contracted as shown by the alternate long and short dash line, and the needle tip 4b can follow the positional displacement of the electrode P as it is without changing the contact position with the electrode P. In addition, the needle tip 4b is, as much as possible, the electrode P.
It is preferable to make a contact perpendicular to. By doing so, even if the position of the electrode P is displaced, the electrode P of the needle tip 4b is
The pressure contact force with respect to can be maintained substantially constant, and a stable pressure contact state can be maintained.

As described above, according to this embodiment,
Helical bending part 4 that can be flexibly deformed in any direction
Due to c, the needle tip 4b can flexibly follow the positional displacement of the electrode P without substantially changing the press contact position or the press contact force. Of course, in addition to the thermal deformation of the semiconductor wafer W, even when vibration is applied from the outside, the probe needle 4 acts as described above, and it is possible to suppress the mixing of noise into the obtained measured value. In particular, it is very effective for current measurement at the femtoampere level, which is close to the physical property limit where even a slight vibration greatly affects the measured value.

Conventionally, the contact of the needle tip with the electrode was observed by observing the trace of the needle formed on the electrode from above with a microscope, but this method is used in this embodiment. In the case where the spiral bent portion 4c is formed in the middle like the probe needle 4, the spiral bent portion 4c obstructs the field of view and it is difficult to confirm the trace of the needle. Therefore, in the present embodiment, for example, C is applied from the side of the contact portion between the needle tip 4b and the electrode P.
The image taken by the CD camera is enlarged and displayed on the external monitor so that the needle marks can be confirmed. Alternatively, a fiberscope smaller than the CCD camera may be used.

(Second Embodiment) FIG. 5 shows a perspective view of a probe needle 4 according to a second embodiment. The present embodiment is different from the first embodiment described above in that a portion of the probe needle 4 other than the bent portion 4c has a tubular insulation for the purpose of preventing the measurement value from being affected by external noise such as electromagnetic waves. This is the point of covering the materials 8a and 8b. The root portion 4a is covered with an insulating material 8a, and the linear portion between the bent portion 4c and the needle tip 4b is covered with the insulating material 8b. The insulating materials 8a, 8
Only one of b has the effect of noise reduction. The reason why the bending portion 4c is not covered with the insulating material is to allow the deformation of the bending portion 4c. The material of the insulating materials 8a and 8b is, for example, glass or resin.

(Third Embodiment) FIG. 9 shows a perspective view of a probe needle 14 according to a third embodiment. The probe needle 14 is different from the probe needle 4 of the first embodiment in that the bent portion has one loop shape. A portion 14c 'of the loop-shaped bent portion 14c on the side connected to the needle tip 14b and a portion 14c "on the side connected to the root portion 14a are three-dimensionally intersected with an interval vertically. .

Also in the probe needle 14 of the present embodiment, as in the probe needle 4 of the first embodiment, the root portion 14a thereof is fixed to the manipulator 3 and cantilevered, and at the same time, electrically connected to the tester 2. Connected to the needle tip 14
b is pressed against the electrode P. As in the case of the first embodiment, the action is such that the needle tip 14b has almost no pressure contact position and pressure contact force with respect to the position displacement of the electrode P due to the loop-shaped bent portion 14c that can be flexibly deformed in any direction. You can flexibly follow without changing.

(Fourth Embodiment) FIG. 10 shows a top view of a probe needle 24 according to a fourth embodiment. This probe needle 24 is the probe needle 4 of the first embodiment.
The difference is that the bent portion 24c has a spiral shape in which a plurality of substantially rectangular loops are connected.

Also in the probe needle 24 of the present embodiment, as in the probe needle 4 of the first embodiment, its root portion 24a is fixed to the manipulator 3 so as to be cantilevered and electrically connected to the tester 2. , And the needle tip is pressed against the electrode P. As in the case of the first embodiment, the action of the spiral bent portion 24c that can be flexibly deformed in any direction causes the needle tip to move with respect to the positional displacement of the electrode P.
It is possible to flexibly follow the press contact position and the press contact force with little change. Further, the bent portion 24c may be bent instead of being bent. Such a structure facilitates bending.

(Fifth Embodiment) FIG. 11 shows a perspective view of a probe needle 34 according to a fifth embodiment. This probe needle 34 is the probe needle 4 of the first embodiment.
The difference is that the bent portion 34c has a three-dimensional S-shape. That is, it is twisted at the central portion of the S-shape and has a three-dimensional S-shape that is also uneven in the depth (or front) direction of the paper. As a result, the bent portion 34
Allows deformation of c in all directions.

In the probe needle 34 of the present embodiment as well, as in the probe needle 4 of the first embodiment, its root is fixed to the manipulator 3 and cantilevered and electrically connected to the tester 2. The needle tip 34b is connected and pressed against the electrode P. As in the case of the first embodiment, the action of the three-dimensional S-shaped bent portion 34c that can be flexibly deformed in any direction causes the needle tip 34b to move to the pressure contact position and It can flexibly follow with almost no change in pressure contact force.

The bent portion 34c shown in FIG.
Even with the probe needle 44 having a lateral structure as shown in FIG. 2, it is possible to flexibly deal with deformation in any direction, as in the above-described embodiments. Furthermore, a configuration in which a plurality of bent portions 34c shown in FIG. This is Figure 1
The same applies to the two probe needles 44.

(Sixth Embodiment) FIG. 13 shows a perspective view of a probe needle 54 according to a sixth embodiment. This probe needle 54 is the probe needle 4 of the first embodiment.
The difference is that the bent portion 54c has a three-dimensional figure-eight shape. That is, referring also to the side view of Fig. 14, in Fig. 13, the upper loop 54c 'projects toward the front of the paper and the lower loop 54c "projects toward the rear of the paper. Allows transformation in any direction.

In the probe needle 54 of the present embodiment as well, as in the probe needle 4 of the first embodiment, its root is fixed to the manipulator 3 and cantilevered, and electrically connected to the tester 2. The needle tip 54b is connected and pressed against the electrode P. As in the case of the first embodiment, its action is that, due to the three-dimensional eight-shaped bent portion 54c that can be flexibly deformed in any direction, the needle tip 54b is pressed against the position displacement of the electrode P. Also, it is possible to follow flexibly with almost no change in pressure contact force.

(Seventh Embodiment) Next, FIGS.
The seventh embodiment will be described with reference to FIG. The present embodiment is a case where the probe needle of each of the above-described embodiments is applied to a probe card. As an example,
A case where the probe needle 13 having the same structure as the probe needle 14 of the third embodiment is applied will be described. That is,
The probe needle 13 has one loop-shaped bent portion 13c.

As shown in FIGS. 15 and 16, for example, a plurality of probe needles 13 are attached to a circular ring-shaped support 11 to form the probe card 10 of the present embodiment. Specifically, the root portion 13 of each probe needle 13
a is fixed to the support tool 11 and cantilevered. The needle tips 13b face in the same direction (downward in FIG. 16) radially inward. Then, the root portion 13a and the needle tip 13
A three-dimensional loop-shaped bent portion 13c is formed between the bent portion 13b and b.

FIG. 17 shows a main part of the inspection apparatus of this embodiment. The probe card 10 described above has a test head 12
The test head 12 is connected to the tester 2 via a cable 25. Probe needle 13
The root portion 13a of the above is electrically connected to the tester 2 through a cable 25 and a predetermined wiring pattern formed on the support tool 11 and the test head 12.

Immediately below the test head 12, a semiconductor wafer W mounted on a support (not shown) is arranged, and a large number of semiconductor chips T are formed on the semiconductor wafer W.
A plurality of electrodes (pads) P are formed on the peripheral portion of the semiconductor chip T, and the support base is raised to a position where these electrodes P are in pressure contact with the needle tip 13b of the probe needle 13.

The pitch of each needle tip 13b is adjusted to the pitch of each electrode P, and the probe card 1 is used for inspection.
0 is positioned at a predetermined position, and the support table on which the semiconductor wafer W is placed moves up to a position where it comes into pressure contact with the needle tip 13b, and a plurality of probe needles 13 come into pressure contact with each electrode P at the same time. In this state, an electric signal is exchanged between the tester 2 and the electrode P via the probe needle 13.

Also in the present embodiment, the needle tip 13b is flexible with respect to the positional displacement of the electrode P due to the thermal deformation of the semiconductor wafer W or the vibration applied from the outside, and the pressure contact position and the pressure contact force are hardly changed. Can follow.

Although the respective embodiments of the present invention have been described above, it goes without saying that the present invention is not limited to these embodiments.
Various modifications are possible based on the technical idea of the present invention.

The object to be inspected is not limited to a semiconductor chip formed on a semiconductor wafer, but the present invention can be applied to, for example, a liquid crystal substrate. The insulating material for shielding external noise shown in the second embodiment may be applied to the probe needle of another embodiment.

All probe needles shown in the first to sixth embodiments can be applied to the probe card shown in the seventh embodiment. If multiple probe needles are arranged at high density, take measures such as reducing the diameter of loops and helices, increasing the length, or increasing the inclination (approaching vertical), or By using the S-shaped probe needle 34 of the fifth embodiment shown in FIG. 11 which does not require much space in the lateral direction, mutual interference due to deformation of the probe needles can be avoided.

The material of the probe needle in each of the above-described embodiments is such that hardness that can withstand repeated pressure contact with the electrode P, good conductivity, and good spring property by bending are obtained. Those satisfying the above are preferable. For example, tungsten, beryllium copper, rhenium tungsten, palladium alloy, and the like can be given as examples.

[0046]

As described above, according to the present invention, a bent portion having a three-dimensional structure that can be flexibly deformed in any direction is provided between the base portion of the probe needle that is cantilevered and the needle tip. Since it is formed, the needle tip can flexibly follow the positional displacement of the electrode, and a stable contact state can be maintained even when an inspection is performed for a long time by applying a heat load. As a result, the accuracy of the obtained measurement data, the failure of the measurement work can be prevented, and the yield can be improved, and further, the development efficiency of the device can be improved.

If the bent portion of the three-dimensional structure is formed into a loop shape, the bent portion of the loop shape is easily deformed in all directions, so that the followability of the needle tip with respect to the positional displacement of the electrode can be further enhanced. . Further, if the bent portion is formed in a spiral shape or is thinner than the root portion, the bent portion can be deformed more easily, and the followability of the needle tip can be further improved.

[Brief description of drawings]

FIG. 1 is a schematic diagram of an inspection device according to a first embodiment of the present invention.

FIG. 2 is a top view of a probe needle according to the first embodiment of the present invention.

FIG. 3 is a side view of the probe needle.

FIG. 4 is a perspective view of the probe needle.

FIG. 5 is a perspective view of a probe needle according to a second embodiment of the present invention.

FIG. 6 is a diagram illustrating an upward tracking action of a probe needle according to the first embodiment.

FIG. 7 is a diagram for explaining a follow-up action of the probe needle in an obliquely upper right direction.

FIG. 8 is a diagram for explaining the follow-up action of the probe needle diagonally upward to the left.

FIG. 9 is a perspective view of a probe needle according to a third embodiment of the present invention.

FIG. 10 is a top view of a probe needle according to a fourth embodiment of the present invention.

FIG. 11 is a perspective view of a probe needle according to a fifth embodiment of the present invention.

FIG. 12 is a perspective view of a probe needle having a structure in which the probe needle according to the fifth embodiment is laid down.

FIG. 13 is a perspective view of a probe needle according to a sixth embodiment of the present invention.

FIG. 14 is a side view of the probe needle according to the sixth embodiment.

FIG. 15 is a perspective view of a probe card according to a seventh embodiment of the present invention.

16 is a sectional view taken along line [16]-[16] in FIG.

FIG. 17 is a schematic view of an inspection device using the probe card.

FIG. 18 is a schematic view of a main part of an inspection device using a probe needle of a conventional example.

FIG. 19 is a schematic view of a main part of an inspection apparatus using a probe needle of another conventional example.

[Explanation of symbols]

1 ... inspection device, 2 ... tester, 3 ... manipulator, 4 ... probe needle, 8a, 8b ... shield member,
10 ... probe card, 13 ... probe needle, 14 ...
... probe needle, 24 ... probe needle, 34 ... probe needle, 44 ... probe needle, 54 ... probe needle.

─────────────────────────────────────────────────── ─── Continuation of front page (51) Int.Cl. ⁷ Identification code FI theme code (reference) G01R 31/28 H01L 21/66 B H01L 21/66 G01R 31/28 K F term (reference) 2G003 AA07 AA10 AB01 AD01 AG03 AG12 AG13 AG20 AH09 2G011 AA01 AA02 AA17 AB01 AB06 AC06 AC14 AC33 AE03 2G132 AA00 AB01 AB14 AE02 AE03 AE16 AE22 AE30 AF06 AF07 AL03 AL04 4M106 AA01 BA01 BA14 CA27 CA60 CA62 DD03 DD10 DJ02

Claims (16)

[Claims] 1. A probe needle having conductivity, in which a root portion is supported by a cantilever, the tip of which is in contact with an electrode of an object to be inspected, wherein: A probe needle in which a bent portion having a three-dimensional structure is formed. 2. The probe needle according to claim 1, wherein the bent portion is formed in a loop shape. 3. The probe needle according to claim 1, wherein the bent portion is formed in a spiral shape. 4. The probe needle according to claim 1, wherein the bent portion is thinner than the root portion. 5. The probe needle according to claim 1, wherein a portion other than the bent portion is covered with an insulating material. 6. A probe card having a plurality of conductive probe needles arranged corresponding to electrodes of an object to be inspected and attached to a support tool, wherein the probe needles are attached to the support tool. A probe card, characterized in that a bent portion having a three-dimensional structure is formed between a root portion and a needle tip contacting the electrode. 7. The probe card according to claim 6, wherein the bent portion of the probe needle is formed in a loop shape. 8. The probe card according to claim 6, wherein the bent portion of the probe needle is formed in a spiral shape. 9. The probe card according to claim 6, wherein the bent portion of the probe needle is thinner than the root portion. 10. The probe card according to claim 6, wherein a portion other than the bent portion of the probe needle is covered with an insulating material. 11. A support base for supporting an inspection target, a probe needle having a conductive tip whose tip is in contact with an electrode of the inspection target, a support tool for supporting a root portion of the probe needle, and In a testing device using a probe needle including a tester electrically connected to a root portion, the probe needle forms a bent portion having a three-dimensional structure between the root portion and the needle tip. An inspection apparatus using a probe needle characterized by the above. 12. The inspection device using the probe needle according to claim 11, wherein the bent portion of the probe needle is formed in a loop shape. 13. The inspection device using the probe needle according to claim 11, wherein the bent portion of the probe needle is formed in a spiral shape. 14. The inspection device using a probe needle according to claim 11, wherein the bent portion of the probe needle is thinner than the root portion. 15. The inspection device using a probe needle according to claim 11, wherein a portion other than the bent portion of the probe needle is covered with an insulating material. 16. An inspection method using a conductive probe needle in which a bent portion having a three-dimensional structure is formed between a root portion electrically connected to a tester and a needle tip, wherein the root portion is An inspection method using a probe needle, wherein the probe tip is brought into contact with an electrode of an inspection object in a cantilevered state to inspect the electrical characteristics of the inspection object.