JP2003218662A - Piezoelectric component - Google Patents
Piezoelectric componentInfo
- Publication number
- JP2003218662A JP2003218662A JP2002012197A JP2002012197A JP2003218662A JP 2003218662 A JP2003218662 A JP 2003218662A JP 2002012197 A JP2002012197 A JP 2002012197A JP 2002012197 A JP2002012197 A JP 2002012197A JP 2003218662 A JP2003218662 A JP 2003218662A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- piezoelectric
- film
- terminal electrode
- dielectric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、共振子、発振子、
またはフィルタ等に用いられる圧電部品に係る。TECHNICAL FIELD The present invention relates to a resonator, an oscillator,
Alternatively, it relates to a piezoelectric component used for a filter or the like.
【0002】[0002]
【従来の技術】この種の圧電部品として、圧電基板を、
誘電体基板と支持基板とでサンドイッチした積層構造の
圧電部品が知られている。圧電基板は、両面に振動電極
膜を有し、一面が振動空間を有して支持基板の一面に接
着されている。圧電基板の両面に形成された電極膜は、
一端が圧電基板の側面に導出される。2. Description of the Related Art A piezoelectric substrate is used as a piezoelectric component of this type.
There is known a piezoelectric component having a laminated structure in which a dielectric substrate and a support substrate are sandwiched. The piezoelectric substrate has vibrating electrode films on both sides, and one surface has a vibrating space and is bonded to one surface of the supporting substrate. The electrode films formed on both sides of the piezoelectric substrate are
One end is led out to the side surface of the piezoelectric substrate.
【0003】圧電基板は圧電特性を得るためのものであ
るから、機械強度の高い材料よりも、圧電特性の優れた
圧電セラミック等を用いて構成する。Since the piezoelectric substrate is for obtaining piezoelectric characteristics, it is formed by using a piezoelectric ceramic or the like which has excellent piezoelectric characteristics rather than a material having high mechanical strength.
【0004】誘電体基板は圧電基板の他面側に振動空間
を有して接着されている。誘電体基板は、圧電振動部品
に対する負荷容量を形成するために用いられるもので、
基板表面等の適当な位置に、負荷容量を取得するための
電極が形成されている。誘電体基板は、負荷容量を取得
するためのものであるから、機械的強度の高い材料より
も、誘電率の高い誘電体セラミック等を用いて構成され
る。The dielectric substrate is bonded to the other surface of the piezoelectric substrate with a vibration space. The dielectric substrate is used to form a load capacitance for the piezoelectric vibrating component,
Electrodes for obtaining load capacitance are formed at appropriate positions on the substrate surface or the like. Since the dielectric substrate is for obtaining the load capacitance, it is configured by using a dielectric ceramic or the like having a higher dielectric constant than a material having a high mechanical strength.
【0005】支持基板は、圧電基板及び誘電体基板を支
えるもので、回路基板等の実装基板に対して、直接に取
り付けられるものであることから、機械的強度の高いセ
ラミック材料、例えばアルミナや、フォルステライト等
のセラミック材料を用いて構成される。The supporting substrate supports the piezoelectric substrate and the dielectric substrate and is directly attached to a mounting substrate such as a circuit substrate. Therefore, a ceramic material having high mechanical strength such as alumina or It is composed of a ceramic material such as forsterite.
【0006】支持基板、圧電基板及び誘電体基板から構
成される積層体の側面及び底面には、外部と接続するた
めの端子電極膜が付与される。この端子電極膜は、圧電
基板に備えられた電極膜のみならず、誘電体基板に形成
された容量取得のための電極にも接続する必要がある。A terminal electrode film for connecting to the outside is provided on the side surface and the bottom surface of the laminate composed of the supporting substrate, the piezoelectric substrate and the dielectric substrate. This terminal electrode film needs to be connected not only to the electrode film provided on the piezoelectric substrate but also to the electrode for capacitance acquisition formed on the dielectric substrate.
【0007】上述した圧電部品を、回路基板等の実装用
基板に実装する場合、端子電極膜を、実装用基板に設け
られた導体パターンにはんだ付けする。When the above-described piezoelectric component is mounted on a mounting board such as a circuit board, the terminal electrode film is soldered to a conductor pattern provided on the mounting board.
【0008】ところが、この端子電極膜は、支持基板、
圧電基板及び誘電体基板からなる積層体の全体にわたっ
て、帯状に形成されているため、積層体を実装用基板に
はんだ付けしたとき、溶融はんだが、端子電極膜の表面
を、支持基板の側から、圧電基板及び誘電体基板のある
方向に上昇し、誘電体基板及び圧電基板の側面を覆って
いる端子電極膜の上部にも付着する。However, this terminal electrode film is
Since the laminated body composed of the piezoelectric substrate and the dielectric substrate is formed in a strip shape, when the laminated body is soldered to the mounting substrate, the molten solder causes the surface of the terminal electrode film from the side of the supporting substrate. , Rises in a certain direction of the piezoelectric substrate and the dielectric substrate, and adheres also to the upper part of the terminal electrode film covering the side surfaces of the dielectric substrate and the piezoelectric substrate.
【0009】上述したように、圧電基板は圧電特性を得
るためのものであり、誘電体基板は、負荷容量を取得す
るためのものであるから、機械的強度の高い材料より
も、圧電特性の高い圧電セラミックス及び誘電率の高い
誘電体セラミック等を用いて構成されている。このた
め、機械的強度の比較的弱い圧電基板及び誘電体基板
が、溶融はんだによる熱膨張、はんだの冷却固化時の熱
収縮に伴う熱応力により、端子電極膜との接触部分でク
ラックを生じたり、電極剥離による破損を受ける等の問
題を生じることがあった。As described above, since the piezoelectric substrate is for obtaining the piezoelectric characteristic and the dielectric substrate is for obtaining the load capacitance, the piezoelectric characteristic is more important than the material having high mechanical strength. It is configured by using high piezoelectric ceramics and dielectric ceramics having a high dielectric constant. Therefore, the piezoelectric substrate and the dielectric substrate, which have relatively weak mechanical strength, may crack at the contact portion with the terminal electrode film due to thermal stress caused by thermal expansion due to molten solder and thermal contraction during cooling and solidification of the solder. However, problems such as damage due to electrode peeling may occur.
【0010】[0010]
【発明が解決しようとする課題】本発明の課題は、はん
だ付けに伴う圧電基板及び誘電体基板の熱的損傷を確実
に阻止し得る圧電部品を提供することである。SUMMARY OF THE INVENTION An object of the present invention is to provide a piezoelectric component that can reliably prevent thermal damage to the piezoelectric substrate and the dielectric substrate caused by soldering.
【0011】[0011]
【課題を解決するための手段】上述した課題解決のた
め、本発明に係る圧電部品は、支持基板と、圧電基板
と、誘電体基板と、端子電極膜と、はんだ非付着膜とを
含む。In order to solve the above problems, a piezoelectric component according to the present invention includes a support substrate, a piezoelectric substrate, a dielectric substrate, a terminal electrode film, and a solder non-adhesion film.
【0012】前記圧電基板は、両面に振動電極膜を有
し、一面が振動空間を有して前記支持基板の一面に接着
されている。前記誘電体基板は、前記圧電基板の他面側
に振動空間を有して接着されている。The piezoelectric substrate has vibrating electrode films on both sides, and one surface has a vibrating space and is bonded to one surface of the supporting substrate. The dielectric substrate is bonded to the other surface of the piezoelectric substrate with a vibration space.
【0013】前記端子電極膜は、少なくとも、前記支持
基板、前記圧電基板及び前記誘電体基板の側面に付着さ
れ、前記振動電極膜に導通している。The terminal electrode film is attached at least to the side surfaces of the supporting substrate, the piezoelectric substrate and the dielectric substrate, and is electrically connected to the vibrating electrode film.
【0014】前記はんだ非付着膜は、はんだの付着しな
い膜であり、少なくとも前記端子電極膜の上であって、
前記圧電基板及び前記誘電体基板の側面に付着された前
記端子電極膜にはんだが付着するのを阻止する領域に付
着されている。The solder non-adhesion film is a film to which solder does not adhere, and is at least on the terminal electrode film,
It is attached to a region that prevents solder from attaching to the terminal electrode films attached to the side surfaces of the piezoelectric substrate and the dielectric substrate.
【0015】上述したように、本発明に係る圧電部品
は、支持基板と、圧電基板と、誘電体基板とを含んでお
り、圧電基板は、一面が支持基板の一面に接着されてお
り、誘電体基板は圧電基板の他面側に接着されているか
ら、支持基板、圧電基板及び誘電体基板を積層した積層
構造の圧電部品が得られる。As described above, the piezoelectric component according to the present invention includes the supporting substrate, the piezoelectric substrate, and the dielectric substrate. One surface of the piezoelectric substrate is bonded to one surface of the supporting substrate, Since the body substrate is adhered to the other surface side of the piezoelectric substrate, a piezoelectric component having a laminated structure in which the support substrate, the piezoelectric substrate and the dielectric substrate are laminated can be obtained.
【0016】圧電基板は、両面に振動電極膜を有し、一
面が振動空間を有して支持基板の一面に接着されてお
り、誘電体基板は圧電基板の他面側に振動空間を有して
接着されているから、圧電基板の両面に形成された振動
電極膜に信号を供給して、圧電基板を励振した場合、圧
電基板は振動空間において、振動することができる。The piezoelectric substrate has vibrating electrode films on both sides, one surface has a vibrating space and is bonded to one surface of the support substrate, and the dielectric substrate has a vibrating space on the other surface side of the piezoelectric substrate. When the piezoelectric substrate is excited by supplying a signal to the vibrating electrode films formed on both surfaces of the piezoelectric substrate, the piezoelectric substrate can vibrate in the vibrating space.
【0017】圧電部品は、端子電極膜を含んでおり、端
子電極膜は、少なくとも、圧電基板の側面に付着され、
振動電極膜に導通している。従って、端子電極膜を通し
て、圧電基板の振動電極膜を外部に導き、励振のための
信号を供給することができる。The piezoelectric component includes a terminal electrode film, and the terminal electrode film is attached to at least a side surface of the piezoelectric substrate,
It is electrically connected to the vibrating electrode film. Therefore, the vibrating electrode film of the piezoelectric substrate can be guided to the outside through the terminal electrode film and a signal for excitation can be supplied.
【0018】端子電極膜は、また、少なくとも、支持基
板の側面に付着されている。従って、支持基板を実装用
基板に対面させ、支持基板の部分の端子電極膜を、実装
用基板の導体パターン等にはんだ付けすることができ
る。The terminal electrode film is also attached at least to the side surface of the supporting substrate. Therefore, the supporting substrate can be made to face the mounting substrate, and the terminal electrode film of the supporting substrate can be soldered to the conductor pattern or the like of the mounting substrate.
【0019】更に、端子電極膜は、少なくとも、誘電体
基板の側面に付着されている。この構造によれば、誘電
体基板の表面等の適当な位置に形成された負荷容量用電
極膜を、誘電体基板の側面において、端子電極膜に電気
的、機械的に接続し、外部に接続することができる。Further, the terminal electrode film is attached at least to the side surface of the dielectric substrate. According to this structure, the load capacitance electrode film formed at an appropriate position such as the surface of the dielectric substrate is electrically and mechanically connected to the terminal electrode film on the side surface of the dielectric substrate, and is connected to the outside. can do.
【0020】本発明に係る圧電部品は、その特徴部分と
して、はんだ非付着膜を含む。はんだ非付着膜は、はん
だの付着しない膜であり、少なくとも端子電極膜の上で
あって、圧電基板及び誘電体基板の側面に付着された端
子電極膜に、はんだが付着するのを阻止する領域に付着
されている。The piezoelectric component according to the present invention includes a solder non-adhesion film as its characteristic portion. The solder non-adhesion film is a film to which solder does not adhere, and is an area that is at least on the terminal electrode film and prevents the solder from adhering to the terminal electrode film adhered to the side surfaces of the piezoelectric substrate and the dielectric substrate. Is attached to.
【0021】このようなはんだ非付着膜によれば、実装
用基板に圧電部品をはんだ付けしたとき、溶融はんだ
が、端子電極膜の表面を、支持基板の側から、圧電基板
及び誘電体基板のある方向に上昇しても、圧電基板及び
誘電体基板の側面を覆っている端子電極膜に付着するの
を阻止できる。According to such a solder non-adhesion film, when the piezoelectric component is soldered to the mounting substrate, the molten solder causes the surface of the terminal electrode film to come into contact with the piezoelectric substrate and the dielectric substrate from the side of the supporting substrate. Even if it goes up in a certain direction, it can be prevented from adhering to the terminal electrode film covering the side surfaces of the piezoelectric substrate and the dielectric substrate.
【0022】このため、高い圧電特性を有する圧電セラ
ミック等を用いて構成されていて、機械的強度の弱い圧
電基板、及び、高誘電率の誘電体セラミック等を用いて
構成されていて、機械的強度の弱い誘電体基板及び圧電
基板が、溶融はんだによる熱膨張、はんだの冷却固化時
の熱収縮に伴う熱応力の影響を受けにくくなり、圧電基
板及び誘電体基板が、端子電極膜との接触部分でクラッ
クを生じたり、電極剥離による破損を受ける等の問題を
生じることがなくなる。For this reason, a piezoelectric ceramic having a high piezoelectric characteristic or the like is used, and a piezoelectric substrate having a low mechanical strength or a dielectric ceramic having a high dielectric constant is used. Dielectric substrate and piezoelectric substrate with weak strength are less susceptible to thermal stress due to thermal expansion due to molten solder and thermal contraction during cooling and solidification of solder, and piezoelectric substrate and dielectric substrate come into contact with the terminal electrode film. Problems such as cracking at the part and damage due to electrode peeling will not occur.
【0023】更に、本発明に係る圧電部品は、次のよう
な態様をとることができる。
(a)はんだ非付着膜は、金属酸化膜または絶縁樹脂膜
から選択された一種で構成できる。
(b)はんだ非付着膜は、圧電基板及び誘電体基板の側
面、及び、圧電基板及び誘電体基板の端子電極膜に限っ
て付着させることができる。
(c)はんだ非付着膜は、圧電基板及び誘電体基板上の
端子電極膜にのみ付着させ、圧電基板及び誘電体基板の
表面には付着させない構成であってもよい。
(d)はんだ非付着膜は、圧電基板上の端子電極膜にの
み付着されていてもよい。Furthermore, the piezoelectric component according to the present invention can have the following aspects. (A) The solder non-adhesion film can be composed of one kind selected from a metal oxide film or an insulating resin film. (B) The non-soldered film can be attached only to the side surfaces of the piezoelectric substrate and the dielectric substrate and the terminal electrode films of the piezoelectric substrate and the dielectric substrate. (C) The solder non-adhesive film may be attached only to the terminal electrode films on the piezoelectric substrate and the dielectric substrate and not attached to the surfaces of the piezoelectric substrate and the dielectric substrate. (D) The solder non-adhesion film may be adhered only to the terminal electrode film on the piezoelectric substrate.
【0024】[0024]
【発明の実施の形態】図1は本発明に係る圧電部品の分
解斜視図、図2は図1に示した圧電部品の組立状態を示
す斜視図、図3は図2の3ー3線に沿った断面図、図4
は図2の4ー4線に沿った断面図である。図示された圧
電部品は、支持基板11と、圧電基板12と、誘電体基
板13と、端子電極膜21〜23と、はんだ非付着膜3
とを含む。1 is an exploded perspective view of a piezoelectric component according to the present invention, FIG. 2 is a perspective view showing an assembled state of the piezoelectric component shown in FIG. 1, and FIG. 3 is a line 3-3 of FIG. Sectional view along Figure 4,
FIG. 4 is a sectional view taken along line 4-4 of FIG. The illustrated piezoelectric component includes a support substrate 11, a piezoelectric substrate 12, a dielectric substrate 13, terminal electrode films 21 to 23, and a solder non-adhesive film 3.
Including and
【0025】圧電基板12は、両面に振動電極膜14
1、142を有し、一面が、振動空間を有して支持基板
11の一面に、接着剤15によって接着されている。圧
電基板12は、エネルギーとじこめ振動モードであれ
ば、分極方向や振動モード等は任意であり、圧電部品に
おいて知られている圧電材料を用いることができる。The piezoelectric substrate 12 has vibrating electrode films 14 on both sides.
1, 142, and one surface thereof is bonded to the one surface of the support substrate 11 with an adhesive 15 having a vibration space. The piezoelectric substrate 12 may have any polarization direction, vibration mode, and the like as long as it is in the energy confinement vibration mode, and a piezoelectric material known in piezoelectric components can be used.
【0026】振動電極膜141、142は、円形状、角
形状等、任意のパターンをとることができる。振動電極
膜141、142は、印刷、スパッタリング、イオンプ
レーティング、メッキまたはそれらの併用によって形成
することができる。振動電極膜141、142は、一例
であるが、CrおよびAgの二層の金属で構成すること
ができる。The vibrating electrode films 141 and 142 can have any pattern such as a circular shape and a square shape. The vibrating electrode films 141 and 142 can be formed by printing, sputtering, ion plating, plating, or a combination thereof. The vibrating electrode films 141 and 142 are an example, but can be made of a two-layer metal of Cr and Ag.
【0027】接着剤15は、第1の接着層151と、第
2の接着層152との積層で構成されている。図1で
は、第1の接着層151及び第2の接着層152は、支
持基板11及び圧電基板12から分離して図示されてい
るが、第1の接着層151は、支持基板11の周辺を縁
とるように、支持基板11に付着されたものであり、第
2の接着層152は圧電基板12の下面の周辺を縁取る
ように、圧電基板12の周辺に付着されたものである。
接着剤15としては、例えば、エポキシ系接着剤を用い
ることができる。The adhesive 15 is formed by laminating a first adhesive layer 151 and a second adhesive layer 152. In FIG. 1, the first adhesive layer 151 and the second adhesive layer 152 are shown separately from the support substrate 11 and the piezoelectric substrate 12, but the first adhesive layer 151 covers the periphery of the support substrate 11. The second adhesive layer 152 is attached to the periphery of the lower surface of the piezoelectric substrate 12 so as to form the edge, and the second adhesive layer 152 is attached to the periphery of the piezoelectric substrate 12 so as to surround the lower surface of the piezoelectric substrate 12.
As the adhesive 15, for example, an epoxy adhesive can be used.
【0028】支持基板11は、機械的強度の大きなセラ
ミック材料、または、その他の構造用絶縁材料を用いる
ことができる。支持基板11を構成する材料の代表例と
しては、アルミナやフォルステライト等を挙げることが
できる。For the supporting substrate 11, a ceramic material having high mechanical strength or another structural insulating material can be used. Alumina, forsterite, or the like can be given as a typical example of the material forming the support substrate 11.
【0029】誘電体基板13は、圧電基板12の他面側
に、振動空間を有して、接着剤16によって接着されて
いる。誘電体基板13は、高誘電率材料を用いて構成す
る。そのような材料はコンデンサ材料として用いられて
いるセラミック材料から選択して使用することができ
る。The dielectric substrate 13 is bonded to the other surface side of the piezoelectric substrate 12 with an adhesive 16 having a vibration space. The dielectric substrate 13 is made of a high dielectric constant material. Such a material can be selected and used from the ceramic materials used as a capacitor material.
【0030】接着剤16は、第3の接着層161と、第
4の接着層162との積層で構成されている。図1で
は、第3の接着層161及び第4の接着層162は、圧
電基板12及び誘電体基板13から分離して図示されて
いるが、第3の接着層161は、圧電基板12の周辺を
縁とるように、圧電基板12の上面に付着されたもので
あり、第4の接着層162は誘電体基板13の下面の周
辺を縁とるように、誘電体基板13の周辺に付着された
ものである。接着剤16としては、例えば、エポキシ系
接着剤を用いることができる。The adhesive 16 is formed by laminating a third adhesive layer 161 and a fourth adhesive layer 162. In FIG. 1, the third adhesive layer 161 and the fourth adhesive layer 162 are shown separately from the piezoelectric substrate 12 and the dielectric substrate 13, but the third adhesive layer 161 is the periphery of the piezoelectric substrate 12. Is adhered to the upper surface of the piezoelectric substrate 12 so as to have an edge, and the fourth adhesive layer 162 is attached to the periphery of the dielectric substrate 13 so as to have an edge around the lower surface of the dielectric substrate 13. It is a thing. As the adhesive 16, for example, an epoxy adhesive can be used.
【0031】端子電極膜21〜23は、少なくとも、支
持基板11、圧電基板12及び誘電体基板13の側面に
付着されている。図示実施例において、端子電極膜21
〜23は、相互に間隔を隔て、支持基板11、圧電基板
12及び誘電体基板13の側面、支持基板11の底面及
び誘電体基板13の上面を通って連続するように配置さ
れている。端子電極膜21〜23は、支持基板の底面で
一部とぎれても良い。端子電極膜21は、圧電基板12
に設けられた振動電極膜141に導通し、端子電極膜2
3は圧電基板12の下面に設けられた振動電極膜142
に導通している。端子電極膜22は、アース端子となる
もので、誘電体基板13の表面では、端子電極膜22は
端子電極膜21と端子電極膜23との間で、負荷容量を
生じさせる。The terminal electrode films 21 to 23 are attached to at least the side surfaces of the support substrate 11, the piezoelectric substrate 12 and the dielectric substrate 13. In the illustrated embodiment, the terminal electrode film 21
23 to 23 are arranged so as to be continuous with each other through the side surfaces of the support substrate 11, the piezoelectric substrate 12 and the dielectric substrate 13, the bottom surface of the support substrate 11 and the top surface of the dielectric substrate 13 at intervals. The terminal electrode films 21 to 23 may be partially cut off at the bottom surface of the support substrate. The terminal electrode film 21 is the piezoelectric substrate 12
Is electrically connected to the vibrating electrode film 141 provided in the terminal electrode film 2
3 is a vibrating electrode film 142 provided on the lower surface of the piezoelectric substrate 12.
Is connected to. The terminal electrode film 22 serves as a ground terminal, and on the surface of the dielectric substrate 13, the terminal electrode film 22 causes a load capacitance between the terminal electrode film 21 and the terminal electrode film 23.
【0032】端子電極膜21〜23は、その全長にわた
って、同一の材料による同一の膜構造とすることもでき
るし、誘電体基板13及び支持基板11の表面に形成さ
れる部分を、他の部分とは異なる材料または膜構造とす
ることもできる。例えば、誘電体基板13及び支持基板
11の表面に形成される部分は、5μmのAg膜を形成
し、その上に、2μmのCu膜、その上に1.5μmの
Ni膜、更にその上に、4μmのSn膜を形成した膜構
造とし、他の部分は、2μmのCu膜、その上に1.5
μmのNi膜、更にその上に、4μmのSn膜を形成し
た膜構造とすることができる。端子電極膜21〜23
は、スパッタリング、イオンプレーティング、メッキま
たはそれらの併用によって形成することができる。The terminal electrode films 21 to 23 may have the same film structure made of the same material over the entire length thereof, or the portions formed on the surfaces of the dielectric substrate 13 and the support substrate 11 may be changed to other portions. It is also possible to use a material or a film structure different from the above. For example, in the portions formed on the surfaces of the dielectric substrate 13 and the support substrate 11, a 5 μm Ag film is formed, a 2 μm Cu film is formed on the Ag film, and a 1.5 μm Ni film is formed on the Cu film. The film structure is such that a 4 μm Sn film is formed, and the other part is a 2 μm Cu film with 1.5 μm above it.
It is possible to have a film structure in which a Ni film of μm and a Sn film of 4 μm are further formed thereon. Terminal electrode films 21-23
Can be formed by sputtering, ion plating, plating, or a combination thereof.
【0033】はんだ非付着膜3は、はんだの付着しない
膜であり、少なくとも端子電極膜21〜23の上であっ
て、圧電基板12及び誘電体基板13の側面に付着され
た端子電極膜21〜23に、はんだが付着するのを阻止
する領域に付着されている。はんだ非付着膜3は、金属
酸化膜または絶縁樹脂膜から選択された一種で構成でき
る。The solder non-adhesion film 3 is a film to which solder does not adhere, and is at least on the terminal electrode films 21 to 23, and the terminal electrode films 21 to 21 attached to the side surfaces of the piezoelectric substrate 12 and the dielectric substrate 13. 23 is attached to the area that prevents solder from adhering. The solder non-adhesion film 3 can be composed of one kind selected from a metal oxide film or an insulating resin film.
【0034】図1〜図4の実施例では、はんだ非付着膜
3は絶縁樹脂膜によって構成し、支持基板11の側面を
除き、圧電基板12及び誘電体基板13の側面を、端子
電極膜21〜23の表面とともに、覆うように付着させ
てある。In the embodiment shown in FIGS. 1 to 4, the solder non-adhesive film 3 is made of an insulating resin film, and the side surfaces of the piezoelectric substrate 12 and the dielectric substrate 13 except the side surface of the support substrate 11 are connected to the terminal electrode film 21. It is attached so as to cover with the surfaces of ~ 23.
【0035】上述したように、本発明に係る圧電部品に
おいて、圧電基板12は、一面が支持基板11の一面に
接着されており、誘電体基板13は圧電基板12の他面
側に接着されているから、支持基板11、圧電基板12
及び誘電体基板13を積層した構造の圧電部品が得られ
る。As described above, in the piezoelectric component according to the present invention, one surface of the piezoelectric substrate 12 is bonded to one surface of the support substrate 11, and the dielectric substrate 13 is bonded to the other surface side of the piezoelectric substrate 12. Therefore, the support substrate 11 and the piezoelectric substrate 12
A piezoelectric component having a structure in which the dielectric substrate 13 is laminated is obtained.
【0036】圧電基板12は、両面に振動電極膜14
1、142を有し、一面が振動空間を有して支持基板1
1の一面に接着されており、誘電体基板13は圧電基板
12の他面側に振動空間を有して接着されているから、
圧電基板12の両面に形成された振動電極膜141、1
42に信号を供給して、圧電基板12を励振した場合、
圧電基板12は振動空間において振動することができ
る。The piezoelectric substrate 12 has a vibrating electrode film 14 on both sides.
1 and 142, one side of which has a vibrating space, and the supporting substrate 1
1 is bonded to one surface of the piezoelectric substrate 12, and the dielectric substrate 13 is bonded to the other surface of the piezoelectric substrate 12 with a vibration space.
Vibrating electrode films 141, 1 formed on both surfaces of the piezoelectric substrate 12.
When a signal is supplied to 42 to excite the piezoelectric substrate 12,
The piezoelectric substrate 12 can vibrate in the vibrating space.
【0037】圧電部品は、一般的な構造として、端子電
極膜21〜23を含んでおり、端子電極膜21〜23
は、少なくとも、圧電基板12の側面に付着され、端子
電極膜21、23は振動電極膜141、142に導通し
ている。従って、端子電極膜21、22を通して、圧電
基板12の振動電極膜141、142を外部に導き、励
振のための信号を供給することができる。The piezoelectric component generally includes terminal electrode films 21 to 23, and the terminal electrode films 21 to 23 are included.
Is attached to at least the side surface of the piezoelectric substrate 12, and the terminal electrode films 21 and 23 are electrically connected to the vibrating electrode films 141 and 142. Therefore, the vibrating electrode films 141 and 142 of the piezoelectric substrate 12 can be guided to the outside through the terminal electrode films 21 and 22, and a signal for excitation can be supplied.
【0038】端子電極膜21〜23は、また、少なくと
も、支持基板11の底面および側面に付着されている。
従って、支持基板11を実装用基板に対面させ、支持基
板11の部分の端子電極膜21〜23を、実装用基板の
導体パターン等にはんだ付けすることができる。The terminal electrode films 21 to 23 are also attached at least to the bottom surface and side surfaces of the support substrate 11.
Therefore, the supporting substrate 11 can be made to face the mounting substrate, and the terminal electrode films 21 to 23 in the portion of the supporting substrate 11 can be soldered to the conductor pattern or the like of the mounting substrate.
【0039】更に、端子電極膜21〜23は、少なくと
も、誘電体基板13の側面に付着されている。この構造
によれば、誘電体基板13の表面等の適当な位置に形成
された負荷容量用電極膜を、誘電体基板13の側面にお
いて、端子電極膜21〜23に電気的、機械的に接続
し、外部に接続することができる。Further, the terminal electrode films 21 to 23 are attached at least to the side surface of the dielectric substrate 13. According to this structure, the load capacitance electrode film formed at an appropriate position on the surface of the dielectric substrate 13 is electrically and mechanically connected to the terminal electrode films 21 to 23 on the side surface of the dielectric substrate 13. And can be connected to the outside.
【0040】本発明に係る圧電部品は、その特徴部分と
して、はんだ非付着膜3を含む。はんだ非付着膜3は、
はんだの付着しない膜であり、少なくとも端子電極膜2
1〜23の上であって、圧電基板12及び誘電体基板1
3の側面に付着された端子電極膜にはんだが付着するの
を阻止する領域に付着されている。次に、このはんだ非
付着膜3による作用効果について、この圧電部品の使用
状態を示す図5を参照して説明する。図5は図1〜図4
に示した圧電部品を、実装用基板70の上に、はんだ付
け実装した状態を示す断面図である。The piezoelectric component according to the present invention includes the solder non-adhesion film 3 as its characteristic portion. The non-soldered film 3 is
A film to which solder does not adhere, and at least the terminal electrode film 2
1 to 23, the piezoelectric substrate 12 and the dielectric substrate 1
3 is attached to a region that prevents the solder from attaching to the terminal electrode film attached to the side surface of No. 3. Next, the function and effect of the solder non-adhesion film 3 will be described with reference to FIG. 5 showing the usage state of the piezoelectric component. FIG. 5 shows FIGS.
FIG. 9 is a cross-sectional view showing a state in which the piezoelectric component shown in FIG.
【0041】図5に示すように、圧電部品を実装用基板
70の導体パターン75に、はんだ付け60をした場
合、溶融はんだが、端子電極膜21〜23の表面を、支
持基板11の側から、圧電基板12及び誘電体基板13
のある方向に上昇しようとする。As shown in FIG. 5, when the piezoelectric component is soldered 60 to the conductor pattern 75 of the mounting substrate 70, the molten solder is applied to the surface of the terminal electrode films 21 to 23 from the support substrate 11 side. , Piezoelectric substrate 12 and dielectric substrate 13
Try to rise in a certain direction.
【0042】ところが、本発明に係る圧電部品は、はん
だ非付着膜3を含んでおり、はんだ非付着膜3は、少な
くとも端子電極膜21〜23の上であって、圧電基板1
2及び誘電体基板13の側面に付着された端子電極膜2
1〜23に、はんだが付着するのを阻止する領域に付着
されている。具体的には、はんだ非付着膜3は、支持基
板11の側面を除き、圧電基板12及び誘電体基板13
の側面を、端子電極膜21〜23の表面とともに、覆う
ように付着させてある。However, the piezoelectric component according to the present invention includes the solder non-adhesive film 3, and the solder non-adhesive film 3 is at least on the terminal electrode films 21 to 23, and the piezoelectric substrate 1
2 and the terminal electrode film 2 attached to the side surface of the dielectric substrate 13.
1 to 23 are attached to the areas that prevent the solder from attaching. Specifically, the solder non-adhesion film 3 is formed on the piezoelectric substrate 12 and the dielectric substrate 13 except for the side surface of the support substrate 11.
Is attached so as to cover the side surfaces of the terminal electrode films 21 to 23 together with the surfaces thereof.
【0043】従って、はんだ60は、支持基板11の側
面上にあって、はんだ非付着膜3が付着されていない端
子電極膜21〜23にのみ付着し、誘電体基板13の側
面を覆っている端子電極膜21〜23に付着することが
ない。Therefore, the solder 60 adheres only to the terminal electrode films 21 to 23 on the side surface of the support substrate 11 where the solder non-adhesion film 3 is not adhered, and covers the side surface of the dielectric substrate 13. It does not adhere to the terminal electrode films 21 to 23.
【0044】このため、高い圧電特性を有するセラミッ
ク等を用いて構成されていて、機械的強度の弱い圧電基
板12、及び、高誘電率の誘電体セラミック等を用いて
構成されていて、機械的強度の弱い誘電体基板13が、
溶融はんだによる熱膨張、はんだの冷却固化時の熱収縮
に伴う熱応力の影響を受けにくくなり、圧電基板12及
び誘電体基板13が、端子電極膜21〜23との接触部
分でクラックを生じたり、電極剥離による破損を受ける
等の問題を生じることがなくなる。Therefore, the piezoelectric substrate 12 having a high piezoelectric property is used, and the piezoelectric substrate 12 having a low mechanical strength and the dielectric ceramic having a high dielectric constant are used. The weak dielectric substrate 13
It becomes less susceptible to the thermal expansion due to the molten solder and the thermal stress due to the thermal contraction when the solder is cooled and solidified, and the piezoelectric substrate 12 and the dielectric substrate 13 are cracked at the contact portions with the terminal electrode films 21 to 23. In addition, problems such as damage due to electrode peeling will not occur.
【0045】図6は本発明に係る圧電部品の他の実施例
を示す断面図である。断面位置は図2の4ー4線上であ
る。この実施例では、はんだ非付着膜3は、誘電体基板
13上面、誘電体基板13の側面、及び、圧電基板12
の側面の上にある端子電極膜21〜23を連続して覆う
ように付着されている。はんだ非付着膜3は、支持基板
11の側面に位置する端子電極膜21〜23には付着し
ていない。FIG. 6 is a sectional view showing another embodiment of the piezoelectric component according to the present invention. The cross-sectional position is on the line 4-4 in FIG. In this embodiment, the non-soldered film 3 is formed on the upper surface of the dielectric substrate 13, the side surface of the dielectric substrate 13, and the piezoelectric substrate 12.
Is attached so as to continuously cover the terminal electrode films 21 to 23 on the side surface of the. The solder non-adhesion film 3 is not attached to the terminal electrode films 21 to 23 located on the side surface of the support substrate 11.
【0046】図7は本発明に係る圧電部品の更に別の実
施例を示す正面図、図8は図7の8ー8線に沿った断面
図である。この実施例では、はんだ非付着膜3は、圧電
基板12の側面、及び、その上にある端子電極膜21〜
23のみを覆っている。はんだ非付着膜3は、誘電体基
板13の上面、誘電体基板13の側面及び支持基板11
の側面及び底面の上に位置する端子電極膜21〜23の
表面には付着していない。FIG. 7 is a front view showing still another embodiment of the piezoelectric component according to the present invention, and FIG. 8 is a sectional view taken along line 8-8 of FIG. In this embodiment, the non-soldered film 3 is formed on the side surface of the piezoelectric substrate 12 and the terminal electrode films 21 to 21 on the side surface.
It covers only 23. The non-soldered film 3 is formed on the upper surface of the dielectric substrate 13, the side surface of the dielectric substrate 13, and the support substrate 11.
Is not attached to the surfaces of the terminal electrode films 21 to 23 located on the side surfaces and the bottom surface of the.
【0047】図9は本発明に係る圧電部品の更に別の実
施例を示す正面図である。この実施例では、はんだ非付
着膜31〜33に分かれている。はんだ非付着膜31
は、誘電体基板13及び圧電基板12の側面上におい
て、端子電極膜21のみを覆っている。はんだ非付着膜
32は、誘電体基板13及び圧電基板12の側面上にお
いて、端子電極膜22のみを覆っている。はんだ非付着
膜33は、誘電体基板13及び圧電基板12の側面上に
おいて、端子電極膜23のみを覆っている。はんだ非付
着膜31〜33は圧電基板12及び誘電体基板13の表
面には、殆ど付着していない。FIG. 9 is a front view showing still another embodiment of the piezoelectric component according to the present invention. In this embodiment, the non-soldered films 31 to 33 are divided. Non-soldered film 31
Covers only the terminal electrode film 21 on the side surfaces of the dielectric substrate 13 and the piezoelectric substrate 12. The solder non-adhesion film 32 covers only the terminal electrode film 22 on the side surfaces of the dielectric substrate 13 and the piezoelectric substrate 12. The solder non-adhesion film 33 covers only the terminal electrode film 23 on the side surfaces of the dielectric substrate 13 and the piezoelectric substrate 12. The solder non-adhesion films 31 to 33 are hardly adhered to the surfaces of the piezoelectric substrate 12 and the dielectric substrate 13.
【0048】図10は本発明に係る圧電部品の更に別の
実施例を示す正面図である。この実施例でも、はんだ非
付着膜31〜33に分かれている。はんだ非付着膜31
は、圧電基板12の側面上において、端子電極膜21の
みを覆っている。はんだ非付着膜32は、圧電基板12
の側面上において、端子電極膜22のみを覆っている。
はんだ非付着膜33は圧電基板12の側面上において、
端子電極膜23のみを覆っている。はんだ非付着膜31
〜33は圧電基板12及び誘電体基板13の表面には、
殆ど付着していない。FIG. 10 is a front view showing still another embodiment of the piezoelectric component according to the present invention. Also in this embodiment, the non-soldered films 31 to 33 are divided. Non-soldered film 31
Covers only the terminal electrode film 21 on the side surface of the piezoelectric substrate 12. The non-soldered film 32 is formed on the piezoelectric substrate 12.
On the side surface of, only the terminal electrode film 22 is covered.
The non-soldered film 33 is formed on the side surface of the piezoelectric substrate 12,
Only the terminal electrode film 23 is covered. Non-soldered film 31
On the surface of the piezoelectric substrate 12 and the dielectric substrate 13,
Almost no adhesion.
【0049】図6〜図10に図示した実施例において
も、はんだ非付着膜3、31〜33の働きにより、図1
〜図4に示した圧電部品と同等の作用効果を得ることが
できる。Also in the embodiment shown in FIGS. 6 to 10, the function of the solder non-adhesive films 3, 31 to 33 is shown in FIG.
~ It is possible to obtain the same effects as those of the piezoelectric component shown in Fig. 4.
【0050】本発明に係る圧電部品は、図示の構造に限
定されない。本発明は、共振子、発振子またはフィルタ
等に適した構造に変形された全ての圧電部品に適用可能
である。The piezoelectric component according to the present invention is not limited to the illustrated structure. INDUSTRIAL APPLICABILITY The present invention can be applied to all piezoelectric components modified into a structure suitable for a resonator, an oscillator, a filter, or the like.
【0051】[0051]
【発明の効果】以上述べたように、本発明によれば、は
んだ付けに伴う誘電体基板の熱的損傷を確実に阻止し得
る圧電部品を提供することができる。As described above, according to the present invention, it is possible to provide a piezoelectric component which can reliably prevent thermal damage to the dielectric substrate due to soldering.
【図1】本発明に係る圧電部品の分解斜視図である。FIG. 1 is an exploded perspective view of a piezoelectric component according to the present invention.
【図2】図1に示した圧電部品の組立状態を示す斜視図
である。2 is a perspective view showing an assembled state of the piezoelectric component shown in FIG. 1. FIG.
【図3】図2の3ー3線に沿った断面図である。FIG. 3 is a sectional view taken along line 3-3 of FIG.
【図4】図2の4ー4線に沿った断面図である。4 is a cross-sectional view taken along line 4-4 of FIG.
【図5】図1〜図4に示した圧電部品を、実装用基板の
上にはんだ付け実装した状態を示す断面図である。FIG. 5 is a cross-sectional view showing a state where the piezoelectric component shown in FIGS. 1 to 4 is soldered and mounted on a mounting substrate.
【図6】本発明に係る圧電部品の他の実施例を示す断面
図である。FIG. 6 is a sectional view showing another embodiment of the piezoelectric component according to the present invention.
【図7】本発明に係る圧電部品の更に別の実施例を示す
正面図である。FIG. 7 is a front view showing still another embodiment of the piezoelectric component according to the present invention.
【図8】図7の8ー8線に沿った断面図である。8 is a cross-sectional view taken along line 8-8 of FIG.
【図9】本発明に係る圧電部品の更に別の実施例を示す
正面図である。FIG. 9 is a front view showing still another embodiment of the piezoelectric component according to the present invention.
【図10】本発明に係る圧電部品の更に別の実施例を示
す正面図である。FIG. 10 is a front view showing still another embodiment of the piezoelectric component according to the present invention.
11 支持基板 12 圧電基板 13 誘電体基板 21〜23 端子電極膜 3 はんだ非付着膜 11 Support substrate 12 Piezoelectric substrate 13 Dielectric substrate 21-23 Terminal electrode film 3 Non-soldered film
Claims (6)
と、端子電極膜と、はんだ非付着膜とを含む圧電部品で
あって、 前記圧電基板は、両面に振動電極膜を有し、一面が振動
空間を有して前記支持基板の一面に接着されており、 前記誘電体基板は、前記圧電基板の他面側に振動空間を
有して接着されており、 前記端子電極膜は、少なくとも、前記支持基板、前記圧
電基板及び前記誘電体基板の側面に付着され、前記振動
電極膜に導通しており、 前記はんだ非付着膜は、はんだの付着しない膜であり、
少なくとも前記端子電極膜の上であって、前記誘電体及
び圧電基板の側面に付着された前記端子電極膜に、はん
だが付着するのを阻止する領域に付着されている圧電部
品。1. A piezoelectric component including a support substrate, a piezoelectric substrate, a dielectric substrate, a terminal electrode film, and a solder non-adhesive film, wherein the piezoelectric substrate has vibrating electrode films on both surfaces, One surface has a vibration space and is bonded to one surface of the support substrate, the dielectric substrate is bonded to the other surface side of the piezoelectric substrate with a vibration space, the terminal electrode film, At least, the support substrate, the piezoelectric substrate and the side surface of the dielectric substrate, which is attached to the side surface of the vibrating electrode film, the solder non-adhesion film is a film to which the solder does not adhere,
A piezoelectric component, which is attached at least on the terminal electrode film and in a region that prevents solder from attaching to the terminal electrode film attached to the side surfaces of the dielectric and the piezoelectric substrate.
て、前記はんだ非付着膜は、金属酸化膜または絶縁樹脂
膜から選択された一種である圧電部品。2. The piezoelectric component according to claim 1, wherein the solder non-adhesion film is one kind selected from a metal oxide film and an insulating resin film.
て、前記はんだ非付着膜は、少なくとも、前記誘電体及
び圧電基板の側面、及び、その上の前記端子電極膜に付
着されている圧電部品。3. The piezoelectric component according to claim 1, wherein the solder non-adhesive film is adhered to at least the side surfaces of the dielectric and the piezoelectric substrate and the terminal electrode film thereon. Piezoelectric parts.
て、前記はんだ非付着膜は、前記端子電極膜にのみ付着
されている圧電部品。4. The piezoelectric component according to claim 1, wherein the solder non-adhesion film is attached only to the terminal electrode film.
て、前記はんだ非付着膜は、前記圧電基板の側面及び前
記圧電基板の前記端子電極膜に付着されている圧電部
品。5. The piezoelectric component according to claim 1, wherein the solder non-adhesion film is attached to a side surface of the piezoelectric substrate and the terminal electrode film of the piezoelectric substrate.
て、前記はんだ非付着膜は、前記端子電極膜にのみ付着
されている圧電部品。6. The piezoelectric component according to claim 5, wherein the solder non-adhesion film is attached only to the terminal electrode film.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002012197A JP3841278B2 (en) | 2002-01-21 | 2002-01-21 | Piezoelectric parts |
Applications Claiming Priority (1)
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Cited By (4)
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JP2007142372A (en) * | 2005-10-17 | 2007-06-07 | Semiconductor Energy Lab Co Ltd | Microelectromechanical device, semiconductor device, and manufacturing method thereof |
JP2008277438A (en) * | 2007-04-26 | 2008-11-13 | Ricoh Microelectronics Co Ltd | Electronic component, substrate, and method of manufacturing electronic component and substrate |
US8822251B2 (en) | 2005-10-17 | 2014-09-02 | Semiconductor Energy Laboratory Co., Ltd. | Micro electro mechanical system, semiconductor device, and manufacturing method thereof |
WO2016111047A1 (en) * | 2015-01-08 | 2016-07-14 | 株式会社村田製作所 | Piezoelectric oscillation member and production method for same |
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2002
- 2002-01-21 JP JP2002012197A patent/JP3841278B2/en not_active Expired - Fee Related
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2007142372A (en) * | 2005-10-17 | 2007-06-07 | Semiconductor Energy Lab Co Ltd | Microelectromechanical device, semiconductor device, and manufacturing method thereof |
US8822251B2 (en) | 2005-10-17 | 2014-09-02 | Semiconductor Energy Laboratory Co., Ltd. | Micro electro mechanical system, semiconductor device, and manufacturing method thereof |
US9054227B2 (en) | 2005-10-17 | 2015-06-09 | Semiconductor Energy Laboratory Co., Ltd. | Micro electro mechanical system, semiconductor device, and manufacturing method thereof |
US9597933B2 (en) | 2005-10-17 | 2017-03-21 | Semiconductor Energy Laboratory Co., Ltd. | Micro electro mechanical system, semiconductor device, and manufacturing method thereof |
US10035388B2 (en) | 2005-10-17 | 2018-07-31 | Semiconductor Energy Laboratory Co., Ltd. | Micro electro mechanical system, semiconductor device, and manufacturing method thereof |
JP2008277438A (en) * | 2007-04-26 | 2008-11-13 | Ricoh Microelectronics Co Ltd | Electronic component, substrate, and method of manufacturing electronic component and substrate |
WO2016111047A1 (en) * | 2015-01-08 | 2016-07-14 | 株式会社村田製作所 | Piezoelectric oscillation member and production method for same |
JPWO2016111047A1 (en) * | 2015-01-08 | 2017-08-10 | 株式会社村田製作所 | Method for manufacturing piezoelectric vibration component |
US10749492B2 (en) | 2015-01-08 | 2020-08-18 | Murata Manufacturing Co., Ltd. | Piezoelectric vibration component and method for manufacturing the same |
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