JP2003218055A - Laser irradiation device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a laser irradiation device which realizes efficient uniform annealing by using a laser beam having attenuated regions. <P>SOLUTION: One of a plurality of laser beams is split into two laser beams having an attenuated area each. Each cut surface of the two laser beams is made as both end parts, and each attenuated region of the two laser beams and an attenuated region of other laser beam are mutually combined. Thereby, it is possible to provide a laser irradiation device which can form a laser beam having energy density which enables enough annealing to an irradiated body in any part from a plurality of laser beams having attenuated regions. <P>COPYRIGHT: (C)2003,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of annealing a semiconductor film using laser light (hereinafter referred to as laser annealing) and a laser irradiation apparatus (laser and laser light output from the laser) for performing the method. Apparatus including an optical system for guiding to an irradiation body). The present invention also relates to a method for manufacturing a semiconductor device, which is manufactured by including the laser annealing in a process. Note that in this specification, a semiconductor device refers to all devices that can function by utilizing semiconductor characteristics, and includes an electro-optical device such as a liquid crystal display device or a light-emitting device and an electronic device including the electro-optical device as a component. Shall be provided.

[0002]

2. Description of the Related Art In recent years, a technique for subjecting a semiconductor film formed on an insulating substrate such as glass to laser annealing to crystallize or improve the crystallinity has been widely studied. Silicon is often used for the semiconductor film. In this specification, means for crystallizing a semiconductor film with laser light to obtain a crystalline semiconductor film is called laser crystallization.

The glass substrate is cheaper and more workable than the synthetic quartz glass substrate which has been often used conventionally, and has an advantage that a large-area substrate can be easily produced.
This is the reason why the above research is conducted. Further, the laser is preferably used for crystallization because the melting point of the glass substrate is low. The laser can give high energy only to the semiconductor film without raising the temperature of the substrate so much. Further, the throughput is remarkably higher than that of the heating means using the electric heating furnace.

Since the crystalline semiconductor film formed by irradiation with laser light has a high mobility, a thin film transistor (TFT) is formed using this crystalline semiconductor film, and for example, one glass substrate is It is used for an active matrix type liquid crystal display device or the like for manufacturing TFTs for a pixel portion or for a pixel portion and a driving circuit.

Laser light oscillated from an Ar laser, an excimer laser, or the like is often used as the laser light (see, for example, Patent Document 1 or Patent Document 2).
Further, the excimer laser has an advantage that it has a large output and can be repeatedly irradiated at a high frequency. Laser light emitted from these lasers has an advantage of having a high absorption coefficient for a silicon film which is often used as a semiconductor film.

For the irradiation of the laser light, the laser light is shaped by an optical system so that the irradiation surface or its vicinity has an elliptical shape, a rectangular shape or a linear shape, and the laser light is moved (or The method of performing irradiation by moving the irradiation position of the laser light relative to the irradiation surface) has high productivity and is industrially excellent. In addition, the term "linear" does not mean "line" in a strict sense, but means a rectangle (or an ellipse) having a large aspect ratio. For example, the aspect ratio is 10 or more (preferably 100 to 10).
000). In addition, in the present specification, a laser beam having an elliptical shape (laser light spot) on the irradiation surface is an elliptical beam, a rectangular one is a rectangular beam, and a linear one is a linear beam. The beam. Unless otherwise defined, the spot of laser light is the energy distribution on the irradiation surface of laser light.

[0007]

[Patent Document 1] JP-A-6-163401

[Patent Document 2] JP-A-7-326769

[0008]

Generally, the end portion of an elliptical, rectangular, or linear laser beam formed on or near an irradiation surface by an optical system has a peak at the central portion due to lens aberration or the like. The energy density is gradually attenuated at the ends. (FIG. 9) In such a laser beam, a region having an energy density sufficient to anneal an object to be irradiated is very narrow, about 1/5 to 1/3 including the central portion of the laser beam. In the present specification, a region where the energy density for annealing the irradiated body is insufficient at the end of the laser beam is referred to as an attenuation region.

Further, with the increase in the area of the substrate and the increase in the output of the laser, a longer elliptical beam, a linear beam or a rectangular beam is being formed. This is because it is more efficient to anneal with such a laser beam. However, since the energy density of the end portion of the laser light emitted from the laser is smaller than that in the vicinity of the center, when the optical system further expands, the attenuation region tends to become more prominent.

The energy density of the attenuation region is not sufficient as compared with the central portion of the laser light, and even if annealing is performed using the laser light having the attenuation region, the object to be irradiated is not sufficiently annealed. Can not.

For example, when the object to be irradiated is a semiconductor film, the crystallinity differs between the region annealed by the attenuation region and the region annealed by the high energy density region including the central portion. Therefore, even if a TFT is manufactured using such a semiconductor film, the electrical characteristics of the TFT manufactured in the region annealed by the attenuation region deteriorates,
This causes variation in the same substrate.

Therefore, it is an object of the present invention to provide a laser irradiation apparatus which can efficiently and uniformly anneal a laser beam having an attenuation region. Also,
It is an object to provide a laser irradiation method using such a laser irradiation apparatus and a method for manufacturing a semiconductor device including the laser irradiation method in its steps.

[0013]

According to the present invention, a plurality of laser beams are combined (superposed) with each other in the attenuation regions of the respective laser beams on or near the irradiation surface. However, there is an attenuation region at the end of the laser beam thus formed. Therefore, one of the plurality of laser beams is split into a split beam 1 and a split beam 2 each having an attenuation region. Then, the respective cut portions of the split beam 1 and the split beam 2 are used as both ends, and the respective attenuation regions of the split beam 1 and the split beam 2 and the attenuation regions of other laser beams are combined (superposed) with each other. (FIG. 1A) Further, the split beams do not overlap each other on the irradiation surface. By doing so, it is possible to form laser light having an energy density that can sufficiently anneal the object to be irradiated in any portion from the plurality of laser light having the attenuation regions. (Fig. 1 (B))

Of course, the shape of the irradiation surface of each laser beam does not always have a peak at the center and the energy density is not gradually attenuated at the ends, and a plurality of energy peaks are formed depending on the laser mode. Some are done. In any mode, the present invention can be applied as long as it has a region where the energy density of laser light is not sufficient for annealing the irradiated body.

The configuration of the invention relating to the laser irradiation apparatus disclosed in this specification is such that one of a plurality of lasers and a plurality of lasers emitted from the plurality of lasers is directed in the traveling direction of the lasers. Divide by a plane perpendicular to,
A means for forming two laser beams each having a cut portion and an attenuation region formed by division at both ends thereof, and the cut portions of the two laser lights at both ends on or near the irradiated body, An optical system for combining two laser light attenuation regions and another laser light attenuation region with each other;
It is characterized by having.

In the above structure, a continuous wave or pulsed solid-state laser, a gas laser, a metal laser, or the like can be used as the laser. The solid-state laser is YAG laser, YVO ₄ laser, YL laser.
F laser, YAlO ₃ laser, Y ₂ O ₃ laser, glass laser, ruby laser, alexandrite laser, T
i: Sapphire laser and the like, the gas laser includes an excimer laser, an Ar laser, a Kr laser, a CO ₂ laser, and the like, and the metal laser includes a helium cadmium laser, a copper vapor laser, and a gold vapor laser. Nd ³⁺ , Yb ³⁺ , Cr ⁴⁺ or the like is used as a dopant for the YAG laser, YVO ₄ laser, YLF laser, YAlO ₃ laser, and Y ₂ O ₃ laser.

Further, in the above structure, it is preferable that the laser light is converted into a harmonic by a non-linear optical element. For example, the YAG laser has
It is known to emit laser light having a wavelength of 1065 nm. The absorption coefficient of the laser beam for the silicon film is very low, and it is technically difficult to crystallize the amorphous silicon film which is one of the semiconductor films as it is. However, this laser light can be converted into a shorter wavelength by using a non-linear optical element, and the second harmonic (532 nm), the third harmonic (355 nm), and the fourth harmonic (266 nm) can be used as harmonics. ) And the fifth harmonic (213 nm). Since these harmonics have a higher absorption coefficient than the amorphous silicon film, they can be used for crystallization of the amorphous silicon film.

Further, in the configuration of the invention relating to the laser irradiation method disclosed in the present specification, one of the plurality of laser beams is divided into planes perpendicular to the traveling direction of the laser beams, and the division is performed. Two laser beams having a cut portion and an attenuation region formed at both ends thereof are formed, and the cut portions of the two laser beams are set at both end portions on or near an object to be irradiated. The light attenuation region and another laser light attenuation region are combined with each other to form laser light, and the formed laser light is irradiated while moving relative to the irradiation target. There is.

In the above structure, the laser may be a continuous wave or pulsed solid-state laser, a gas laser, a metal laser, or the like. The solid-state laser is YAG laser, YVO ₄ laser, YL laser.
F laser, YAlO ₃ laser, Y ₂ O ₃ laser, glass laser, ruby laser, alexandrite laser, T
i: Sapphire laser and the like, the gas laser includes an excimer laser, an Ar laser, a Kr laser, a CO ₂ laser, and the like, and the metal laser includes a helium cadmium laser, a copper vapor laser, and a gold vapor laser. Nd ³⁺ , Yb ³⁺ , Cr ⁴⁺ or the like is used as a dopant for the YAG laser, YVO ₄ laser, YLF laser, YAlO ₃ laser, and Y ₂ O ₃ laser.

Further, in the above structure, it is preferable that the laser light is converted into a harmonic by a non-linear optical element.

Further, in the structure of the invention relating to the method for manufacturing a semiconductor device disclosed in this specification, one laser beam among a plurality of laser beams is divided into planes perpendicular to the traveling direction of the laser beam. , Two laser beams having a cut portion formed by division and an attenuation region at both ends are formed, and the cut portions of the two laser beams are set at both ends on or near the semiconductor film. By combining the attenuation region of laser light and the attenuation region of other laser light with each other,
It is characterized in that a laser beam is formed and the formed laser beam is irradiated while moving relative to the semiconductor film, whereby crystallization or crystallinity of the semiconductor film is improved.

Further, according to another aspect of the invention relating to the method for manufacturing a semiconductor device disclosed in this specification, one of a plurality of laser beams is divided by a plane perpendicular to the traveling direction of the laser beam. Then, two laser beams having a cut portion and an attenuating region formed by division at both ends are formed, and the cut portions of the two laser beams are set at both ends on or near the semiconductor film. The two laser light attenuation regions and the other laser light attenuation regions are combined with each other to form laser light, and the formed laser light is moved relative to the semiconductor film in which the impurity element is introduced. It is characterized in that the impurity element is activated by irradiating while performing the irradiation.

In the above structure, the laser can be a continuous wave or pulsed solid-state laser, a gas laser, a metal laser, or the like. The solid-state laser is YAG laser, YVO ₄ laser, YL laser.
F laser, YAlO ₃ laser, Y ₂ O ₃ laser, glass laser, ruby laser, alexandrite laser, T
i: Sapphire laser and the like, the gas laser includes an excimer laser, an Ar laser, a Kr laser, a CO ₂ laser, and the like, and the metal laser includes a helium cadmium laser, a copper vapor laser, and a gold vapor laser. Nd ³⁺ , Yb ³⁺ , Cr ⁴⁺ or the like is used as a dopant for the YAG laser, YVO ₄ laser, YLF laser, YAlO ₃ laser, and Y ₂ O ₃ laser.

Further, in each of the above structures, it is desirable that the laser light is converted into a harmonic by a non-linear optical element.

In each of the above structures, it is desirable that the semiconductor film is a film containing silicon. Then, as a substrate for forming the semiconductor film, a glass substrate, a quartz substrate, a silicon substrate, a plastic substrate, a metal substrate, a stainless substrate, a flexible substrate, or the like can be used. Examples of the glass substrate include a substrate made of glass such as barium borosilicate glass or aluminoborosilicate glass. Further, the flexible substrate means PET, PES,
A film-like substrate made of PEN, acrylic, or the like. If a semiconductor device is manufactured using a flexible substrate,
Weight reduction is expected. Aluminum film (AlON, AlN, AlO, etc.), carbon film (DLC (diamond-like carbon)) on the front surface or the front and back surfaces of the flexible substrate.
Etc.) and a barrier layer of SiN or the like are formed in a single layer or a multi-layer, which is desirable because the durability is improved.

The present invention makes it possible to form a laser beam having an extremely excellent energy density distribution on or near the irradiation surface by using a plurality of laser beams having an attenuation region. By using such a laser beam, it is possible to uniformly anneal the irradiation target.
Furthermore, the present invention effectively utilizes the attenuation region, which has been insufficient in energy density for performing annealing, so that it is possible to improve the throughput. Further, since the semiconductor film formed over the substrate can be efficiently and uniformly irradiated, crystallization of the semiconductor film, improvement of crystallinity, activation of an impurity element, and the like can be favorably performed. it can. Then, it is possible to reduce variations in the electrical characteristics of a TFT manufactured using such a semiconductor film and to improve the characteristics. Furthermore, the operating characteristics and reliability of a semiconductor device manufactured from such a TFT can be improved.

[0027]

BEST MODE FOR CARRYING OUT THE INVENTION An embodiment of the present invention will be described with reference to FIG.

The respective laser beams emitted from the lasers 101b and 101c are concave cylindrical lenses 105.
It is expanded and expanded in the longitudinal direction by b and 105c. Although not shown, between the lasers 101b and 101c and the concave cylindrical lenses 105b and 105c, the laser 101b,
A beam collimator for collimating the laser light emitted from 101c or a beam expander for expanding the laser light may be provided. Then, the convex cylindrical lens 106 having a curvature in the short direction converges the laser light in the short direction and condenses the laser light to reach the substrate 107.

On the other hand, the laser light emitted from the laser 101a is divided into two by the prism 102a and the traveling direction is changed, and the laser light emitted from the prism 102b has a sufficient energy density in the longitudinal direction of the original laser light. The left half and the right half are exchanged (inverted) with the part of as a boundary. This allows the central portion of the laser light emitted from the laser 101a, that is, the portion having a sufficient energy density to reach both ends of the laser light 109 formed on the substrate 107, and the mirror 10
In order to form a laser beam 109 having a sufficient energy density in any part by synthesizing an attenuation region of a laser beam that reaches the substrate 107 via the 4a or the mirror 104b and an attenuation region of another laser beam. Is.
Although not shown, the laser 101a and the prism 102
A beam collimator for collimating the laser light emitted from the laser 101a and a beam expander for spreading the laser light may be provided between a.

Subsequently, the mirror 103 divides the laser beam into two directions, and the laser beams are incident on the concave cylindrical lenses 105a and 105d through the mirrors 104a and 104d, respectively, to spread the laser beam in the longitudinal direction. Then, the convex cylindrical lens 106 having a curvature in the short direction converges the laser light in the short direction and reaches the substrate 107.

In this embodiment, the lasers 101a to 10a are used.
As 1c, a continuous wave YVO ₄ laser is used, and the laser light converted into the second harmonic is emitted. At this time, the beam diameter of the laser light is 2.5 mm at the laser exit. The concave cylindrical lenses 105a to 105d have a focal length of 100 mm, and the convex cylindrical lens 10 has a focal length of 100 mm.
6 uses a spherical lens having a focal length of 20 mm. Aspherical lenses may be used. By using this, a thinner linear beam can be produced. And the concave cylindrical lens 1
The distance from 05a to 105d to the substrate 107 is 100m.
The distance from the convex cylindrical lens 106 to the substrate 107 is 20 mm. Laser light emitted from the lasers 101b and 101c is shaped into a laser light having a length of 5 mm in the long direction and a length of 5 μm in the short direction on the substrate 107. This laser beam has a sufficient energy density for annealing in a 2 mm area including the central portion, but has low energy density in both end portions and is an attenuation area unsuitable for annealing. The laser light emitted from the laser 101a is shaped into a laser light having a length of 2.5 mm in the long direction and a length of 5 μm in the short direction on the substrate 107. Then, the respective laser lights are overlapped with each other in a region including the attenuation region on the substrate 107 to form a rectangular beam having a length of 12 mm and a width of 5 μm. Note that the concave cylindrical lenses 105a to 105d are moved away from the substrate 107, so that the length of the laser beam formed on the substrate 107 in the longitudinal direction can be increased.

Of course, pulsed lasers can be used as the lasers 101a to 101c. For example,
At the exit of the laser, a YLF laser with a beam diameter of 4 mm is used to convert it into the second harmonic. Then, the concave cylindrical lenses 105a to 10 having a focal length of 100 mm are used.
Convex cylindrical lens 10 with 5d and focal length of 20mm
6 is used, each laser beam formed on the substrate 107 has a size of 0.1 mm × 10 mm, and the size of the laser beam formed by overlapping the attenuation regions is 0.1 mm ×.
It becomes 24 mm.

As described above, on the substrate 107, the cut surface formed by dividing the prism 102 and the mirror 103 is used as an end portion, and the attenuation regions in the longitudinal direction are combined with each other, so that the energy density is sufficient in any portion. Thus, it is possible to form a rectangular laser beam 109 that is long in the longitudinal direction.

Then, the laser beam 109 thus formed is 110, 111 relative to the substrate 107.
By irradiating while moving in the direction indicated by and the direction indicated by 112, the entire surface of the substrate 107 or a desired region can be annealed efficiently. For example, if the semiconductor film is crystallized or activated using such an irradiation method, uniform annealing can be efficiently performed. Then, a TFT manufactured using the semiconductor film formed by using the present invention
The electrical characteristics of the semiconductor device can be improved, and further the operating characteristics and reliability of the semiconductor device can be improved.

The base material of the optical system is preferably BK7 or quartz in order to obtain a high transmittance. Also,
As the coating of the optical system, it is preferable to use a coating having a transmittance of 99% or more for the wavelength of the laser light used.

In this embodiment, the optical path length from the laser 101a to the irradiation surface is different from the optical path length from the lasers 101b and 101c to the irradiation surface. Although laser light has excellent coherence, it has a divergence angle,
It is desirable that the optical path length from each laser to the irradiation surface be equal. Therefore, it is preferable to add an optical path length by inserting a mirror between the lasers 101b and 101c and the concave cylindrical lenses 105b and 105c so that the optical path lengths from the respective lasers to the irradiation surface are equal.

Further, in the present embodiment, the shape of the laser beam on the irradiation surface is rectangular, but the present invention is not limited to this. The shape of laser light differs depending on the type of laser. For example, in a solid-state laser, if the rod shape is cylindrical, the shape of the laser light is circular or elliptical, and if it is a slab type, the shape of the laser light is rectangular. Therefore, the present invention can be applied to such a laser beam.
Further, in the present embodiment, the attenuation regions in the long direction of the laser light are combined with each other, but the attenuation regions in the short direction can be combined, or the attenuation regions in the long direction and the short direction can be combined. You can also However,
In order to perform laser annealing efficiently with the simplest configuration, it is desirable to combine the attenuation regions in the lengthwise direction of the laser light. Further, the composition may include the attenuation region.

Although three lasers are used in this embodiment, the number of lasers is not limited in the present invention as long as the number is plural.

The present invention having the above structure will be described in more detail with reference to the following examples.

[0040]

EXAMPLE 1 In this example, an energy density suitable for annealing in the present invention will be described with reference to FIGS. 19 and 20.

FIG. 19 shows a simulation of energy density distribution in which one of the laser beams oscillated from three lasers is used as a split beam and the attenuation regions of the other laser beams are combined with each other as shown in FIG. The result. At this time, a YAG laser was used as the laser, and the laser light emitted from each laser was converted into the second harmonic by the LBO crystal, and the beam diameter of the laser light was 2.25 mm (1 / e ²
Width) and TEM ₀₀ mode. In FIG. 19, the dotted line shows the energy density in the long direction and the solid line shows the energy density in the short direction.

Further, in FIG. 20, the output of the laser is changed,
This is a region for crystallizing when an amorphous silicon film having a film thickness of 150 nm is irradiated. It can be seen from FIG. 20 that the output of the laser suitable for crystallization is 3.5 to 6.0 W, and this range is about ± 10% of the total output. That is, it can be seen that if the variation is within this range, uniform irradiation can be performed.

As shown in FIG. 19, the energy density distribution in the longitudinal direction is in the range excluding the attenuation region (AA in FIG. 19).
It is within ± 10% from the average value of the energy density. If the energy density distribution is within ± 10%, uniform laser irradiation suitable for crystallization can be performed, so that a large grain crystal forming region can be obtained. Further, the attenuation region of the laser light synthesized from FIG. 19 is 200 μm in the 1 / e ² width.
You can see that

[Embodiment 2] In this embodiment, an example of a laser irradiation apparatus for realizing the present invention will be described with reference to FIG.

The respective laser beams emitted from the lasers 101b and 101c are concave cylindrical lenses 105.
It is expanded in the longitudinal direction by b and 105c. Although not shown, the lasers 101b and 101c are provided between the lasers 101b and 101c and the concave cylindrical lenses 105b and 105c.
A beam collimator for collimating the laser light emitted from c and a beam expander for expanding the laser light may be provided. Then, the convex cylindrical lens 106 having a curvature in the short direction converges the laser light in the short direction and reaches the substrate 107.

On the other hand, the laser light emitted from the laser 101a is split into two directions by the mirror 103. In addition,
Although not shown, between the laser 101a and the mirror 103,
A beam collimator for collimating the laser light emitted from the laser 101a or a beam expander for expanding the laser light may be provided. Then, the laser light is made incident on the convex cylindrical lenses 115a and 115d to focus the laser light in the longitudinal direction and then spread. This allows the central portion of the laser light emitted from the laser 101a, that is, the portion having a sufficient energy density to reach both ends of the laser light 119 formed on the substrate 107, and the mirror 104a or the mirror 104b.
An attenuation region of laser light that reaches the substrate 107 via
A laser beam having sufficient energy density in any part by combining with other laser beam attenuation regions 1
This is for forming 19. Subsequently, the convex cylindrical lens 106 having a curvature in the short direction converges the laser light in the short direction and reaches the substrate 107.

As described above, on the substrate 107, the cut surfaces formed by the division by the mirror 103 are used as the end portions, and the attenuation regions in the longitudinal direction are combined with each other, so that the energy density is sufficient at any portion, It is possible to form a rectangular laser beam 119 that is long in the shank direction.

Then, the laser beam 119 thus formed is 110, 111 relative to the substrate 107.
By irradiating while moving in the direction indicated by and the direction indicated by 112, the entire surface of the substrate 107 or a desired region can be annealed efficiently. For example, if the semiconductor film is crystallized or activated using such an irradiation method, uniform annealing can be efficiently performed. Then, a TFT manufactured using the semiconductor film formed by using the present invention
The electrical characteristics of the semiconductor device can be improved, and further the operating characteristics and reliability of the semiconductor device can be improved.

The base material of the optical system is preferably BK7 or quartz, for example, in order to obtain high transmittance. Also,
As the coating of the optical system, it is preferable to use a coating having a transmittance of 99% or more for the wavelength of the laser light used.

In this embodiment, the optical path length from the laser 101a to the irradiation surface is different from the optical path length from the lasers 101b and 101c to the irradiation surface. Although the laser light has excellent coherence but has a divergence angle, it is desirable that the optical path lengths from the respective lasers to the irradiation surface are equal. Therefore, it is preferable to add an optical path length by inserting a mirror between the lasers 101b and 101c and the concave cylindrical lenses 105b and 105c so that the optical path lengths from the respective lasers to the irradiation surface are equal.

Further, although three lasers are used in this embodiment, the number of lasers is not limited in the present invention as long as the number is plural.

[Embodiment 3] In this embodiment, an apparatus and a method for arranging lasers on both sides of a substrate and irradiating the substrate with laser light will be described with reference to FIG.

The lasers 101a to 101c are installed alternately with respect to the substrate 107. Laser 101a-1
The laser light emitted from 01c is condensed in a short direction by the convex cylindrical lenses 122a to 122c and reaches the substrate 107. Although not shown, the laser 101a-
101c and convex cylindrical lenses 122a to 122c
A beam collimator for collimating the laser beams emitted from the lasers 101a to 101c and a beam expander for spreading the laser beams may be inserted between the two.

On the other hand, the laser light emitted from the laser 101d is split into two directions by the mirrors 123a and 123b. This is the laser light 12 formed on the substrate 107.
At both ends of the laser beam, the central portion of the laser light emitted from the laser 101d, that is, the portion having a sufficient energy density, is reached, and the laser light that reaches the substrate 107 via the mirror 124d or the mirror 124e is attenuated. This is because the region and the attenuation region of another laser beam are respectively combined to form the laser beam 129 having sufficient energy density in any part. Although not shown, a beam collimator for collimating the laser light emitted from the laser 101d and a beam expander for expanding the laser light may be provided between the laser 101d and the mirror 123a. Then, mirror 1
After passing through 24d and 124e, the convex cylindrical lenses 122d and 122e having a curvature in the short direction converge the laser light in the short direction and reach the substrate 107.

As described above, on the substrate 107, the cut surface formed by being divided by the mirror 123 is used as an end portion, and the attenuation regions in the longitudinal direction are combined with each other, so that the energy density is sufficient at any portion and It is possible to form a rectangular laser beam 129 that is long in the shank direction.

Then, the laser light 129 thus formed is 110, 111 relative to the substrate 107.
By irradiating while moving in the direction indicated by and the direction indicated by 112, the entire surface of the substrate 107 or a desired region can be annealed efficiently. For example, if the semiconductor film is crystallized or activated using such an irradiation method, uniform annealing can be efficiently performed. Then, a TFT manufactured using the semiconductor film formed by using the present invention
The electrical characteristics of the semiconductor device can be improved, and further the operating characteristics and reliability of the semiconductor device can be improved.

Since lasers are installed on both sides of the substrate in this embodiment, it is necessary to use laser light that passes through the substrate on which the object to be irradiated is formed and the stage. FIG. 5 shows the transmittance for the wavelength of the 1737 substrate, and FIG. 6 shows the transmittance for the wavelength of the quartz substrate. From FIGS. 5 and 6, the transmittance differs depending on the substrate used, and it is preferable to use laser light having a wavelength of 400 nm or more in order to sufficiently anneal the irradiated body.

In this embodiment, the laser 101a is also used.
The optical path length from ˜101c to the irradiation surface, and the laser 101d
The optical path length from to the irradiation surface is different. Although the laser light has excellent coherence but has a divergence angle, it is desirable that the optical path lengths from the respective lasers to the irradiation surface are equal. Therefore, the laser laser 101a-1
01c to convex cylindrical lenses 122a to 122c
It is preferable to add a light path length by inserting a mirror between the two and make the light path length from each laser to the irradiation surface equal. Further, although four lasers are used in this embodiment, the number of lasers is not limited in the present invention as long as the number is plural.

Although an amorphous silicon film is used as the semiconductor film in this embodiment, the present invention is not limited to this, and an amorphous structure such as an amorphous silicon germanium film is used. A compound semiconductor film having may be applied.

This embodiment can be freely combined with the embodiment mode or Embodiment 1 or Embodiment 2.

[Embodiment 4] In this embodiment, a method of crystallizing a semiconductor film using the laser irradiation apparatus of the present invention will be described with reference to FIG.

First, as the substrate 20, a substrate made of glass such as barium borosilicate glass or aluminoborosilicate glass, a quartz substrate, a silicon substrate, a metal substrate or a stainless substrate having an insulating film formed on its surface is used. You can Alternatively, a plastic substrate having heat resistance that can withstand the processing temperature of this embodiment may be used. In this embodiment, a glass substrate is used.

Next, a base film 21 made of an insulating film such as a silicon oxide film, a silicon nitride film or a silicon oxynitride film is formed on the substrate 20. In this embodiment, a single layer structure is used as the base film 21, but a structure in which two or more layers of the insulating film are laminated may be used. In this embodiment, a silicon oxynitride film (composition ratio Si = 32%, O = 59%, N
= 7%, H = 2%) 400 nm.

Next, the semiconductor film 22 is formed on the base film 21. The semiconductor film 22 is formed by known means (sputtering method, LP
25 to 2 by the CVD method or the plasma CVD method)
A semiconductor film is formed to a thickness of 00 nm (preferably 30 to 100 nm), and a known crystallization method (laser crystallization method, RT) is used.
A, a thermal crystallization method using a furnace annealing furnace, a thermal crystallization method using a metal element that promotes crystallization, and the like). Note that the semiconductor film includes an amorphous semiconductor film, a microcrystalline semiconductor film, a crystalline semiconductor film, or the like, and a compound having an amorphous structure such as an amorphous silicon germanium film or an amorphous silicon carbide film. A semiconductor film may be applied. In this embodiment, the plasma CVD method is used, and the thickness is 55 nm.
Forming an amorphous silicon film.

Then, the semiconductor film is crystallized. In this embodiment, laser crystallization is performed, the amorphous silicon film is dehydrogenated (500 ° C., 3 hours), and then a laser annealing method is performed to form a crystalline silicon film 23. (Fig. 7 (B))

When the crystalline semiconductor film is formed by the laser annealing method, pulse oscillation type or continuous oscillation type KrF is used.
Excimer laser, YAG laser, YVO ₄ laser, YL
An F laser, a YAlO ₃ laser, a Y ₂ O ₃ laser, a glass laser, a ruby laser, a Ti: sapphire laser, or the like can be used. In the case of using these lasers, it is preferable to use a method in which a laser beam emitted from a laser oscillator is linearly condensed by an optical system and is applied to a semiconductor film. The crystallization conditions are appropriately selected by the practitioner, but when using a pulsed laser, the oscillation frequency is 300 Hz and the laser energy density is 100 to 1500 mJ / cm 2.
² (typically 200 to 1200 mJ / cm ² ). At this time, the overlapping rate (overlap rate) of the laser beams in the short (scanning) direction may be set to 50 to 98%. Also, the energy density in the case of using a continuous wave laser type about 0.01 to 100 MW / cm ² (preferably 0.1 to 10 MW / cm ²⁾ is required.

In the present embodiment, the second harmonic of the continuous wave YLF laser is used, and the embodiment, the embodiment 2 or the embodiment 3 is used.
Laser light is shaped by the optical system indicated by and the whole surface is crystallized by irradiation while the substrate is moved relative to the laser light. By using the present invention, a crystalline semiconductor film can be obtained by efficiently performing uniform annealing on an amorphous semiconductor film. Then, the electrical characteristics of the TFT manufactured using the semiconductor film formed using the present invention can be improved, and further, the operation characteristics and reliability of the semiconductor device can be improved.

This embodiment can be freely combined with the embodiment mode or Embodiments 1 to 3.

[Embodiment 5] In this embodiment, a method of crystallizing a semiconductor film by using a laser irradiation apparatus of the present invention different from that of Embodiment 3 will be described with reference to FIG.

First, an amorphous silicon film is formed as a semiconductor film according to the fourth embodiment.

Then, the metal-containing layer 31 is formed by utilizing the method described in JP-A-7-183540.
After the heat treatment, the crystallinity of the semiconductor film is improved by a laser annealing method. In this example, an aqueous solution of nickel acetate (concentration in terms of weight: 5 ppm, volume: 10 ml) was applied onto the semiconductor film by spin coating, and heat treatment was performed in a nitrogen atmosphere at 500 ° C. for 1 hour and in a nitrogen atmosphere at 550 ° C. for 12 hours. Then, the first crystalline semiconductor film 32 is obtained. continue,
The crystallinity of the semiconductor film is improved by a laser annealing method to obtain the second crystalline semiconductor film 33. (Figure 8)

The laser annealing method is used for continuous oscillation YVO ₄
Using the second harmonic of the laser, laser light is shaped by the optical system shown in the embodiment, the second embodiment or the third embodiment, and the whole surface is crystallized by irradiating the laser light while moving the substrate relative to the laser light. Turn into By using the present invention, uniform annealing can be efficiently performed on the amorphous semiconductor film to obtain the second crystalline semiconductor film. Then, a TF manufactured using the semiconductor film formed by using the present invention
The electrical characteristics of T can be remarkably improved, and the operating characteristics and reliability of the semiconductor device can be greatly improved.

[Embodiment 6] In this embodiment, a method of manufacturing an active matrix substrate will be described with reference to FIGS. In this specification, a substrate in which a pixel portion including a CMOS circuit and a driver circuit, a pixel TFT, and a storage capacitor is formed over one substrate is referred to as an active matrix substrate for convenience.

First, in this embodiment, a substrate 400 made of glass such as barium borosilicate glass or aluminoborosilicate glass is used. Note that as the substrate 400, a quartz substrate, a silicon substrate, a metal substrate, or a stainless substrate on which an insulating film is formed may be used.
Further, a plastic substrate having heat resistance that can withstand the processing temperature of this embodiment may be used, or a flexible substrate may be used. Since the present invention can easily form a linear beam having the same energy distribution, it is possible to efficiently anneal a large area substrate with a plurality of linear beams.

Next, a base film 401 made of an insulating film such as a silicon oxide film, a silicon nitride film or a silicon oxynitride film is formed on the substrate 400 by a known method. Although a two-layer structure is used as the base film 401 in this embodiment, a single layer film of the insulating film or a stacked structure of two or more layers may be used.

Next, a semiconductor film is formed on the base film.
The semiconductor film is formed into a film having a thickness of 25 to 200 nm (preferably 30 to 150 nm) by a known means (a sputtering method, an LPCVD method, a plasma CVD method or the like), and crystallized by a laser crystallization method. In the laser crystallization method, a semiconductor film is irradiated with laser light by using any one of Embodiment Mode and Embodiments 1 to 3 or by freely combining these embodiments. The laser used is preferably a continuous wave or pulsed solid-state laser, a gas laser, or a metal laser. The solid-state laser may be YAG laser, YVO ₄ laser, YLF laser, YA.
Examples of the gas laser include a KrF excimer laser, an Ar laser, a Kr laser, and a CO ₂ laser, and the like includes an O ₃ laser, a Y ₂ O ₃ laser, a glass laser, a ruby laser, an alexandrite laser, and a Ti: sapphire laser. Examples of the metal laser include a helium cadmium laser, a copper vapor laser, and a gold vapor laser. Said Y
AG laser, YVO ₄ laser, YLF laser, YAlO ₃
Laser and Y ₂ O ₃ laser dopants are Nd ³⁺ , Y
b ³⁺ , Cr ⁴⁺ or the like is used. Of course, not only the laser crystallization method, but also a combination with other known crystallization methods (thermal crystallization method using RTA or furnace annealing, thermal crystallization method using a metal element that promotes crystallization, etc.) You can go. Examples of the semiconductor film include an amorphous semiconductor film, a microcrystalline semiconductor film, and a crystalline semiconductor film, and a compound semiconductor film having an amorphous structure such as an amorphous silicon germanium film and an amorphous silicon carbide film. May be applied.

In this embodiment, a plasma CVD method is used,
A 50 nm amorphous silicon film is formed, and a thermal crystallization method and a laser crystallization method using a metal element that promotes crystallization are performed on the amorphous silicon film. Using nickel as the metal element,
After being introduced onto the amorphous silicon film by a solution coating method, 550
A first crystalline silicon film is obtained by performing heat treatment at 5 ° C. for 5 hours. Then, after converting the laser light emitted from the continuous oscillation YVO ₄ laser with an output of 10 W into the second harmonic by the non-linear optical element, the second crystalline silicon film is obtained according to the second embodiment. The crystallinity is improved by irradiating the first crystalline silicon film with laser light to form the second crystalline silicon film. Energy density at this time is 0.01 to 100M
W / cm ² (preferably 0.1-10 MW / cm ² )
is necessary. Then, the stage is moved relative to the laser light at a speed of about 0.5 to 2000 cm / s and irradiation is performed to form a crystalline silicon film. When a pulsed excimer laser is used, the frequency is 300 Hz and the laser energy density is 100 to 1500 mJ / cm ^2.
(Typically, 200 to 1300 mJ / cm ² ) is desirable. At this time, the laser beams may be overlapped by 50 to 98% in the short length direction.

Of course, using the first crystalline silicon film, T
Although an FT can be manufactured, the crystallinity of the second crystalline silicon film is improved, which is preferable because the electrical characteristics of the TFT are improved. TFT using the second crystalline silicon film
, The mobility is remarkably improved to about 500 to 600 cm ² / Vs.

The crystalline semiconductor film thus obtained is subjected to a patterning process using a photolithography method to form semiconductor layers 402 to 406.

After forming the semiconductor layers 402 to 406, a slight amount of impurity element (boron or phosphorus) may be doped in order to control the threshold value of the TFT.

Next, a gate insulating film 407 which covers the semiconductor layers 402 to 406 is formed. The gate insulating film 407 is formed by a plasma CVD method or a sputtering method and has a thickness of 40 to
It is formed of an insulating film containing silicon with a thickness of 150 nm. In this embodiment, a silicon oxynitride film is formed with a thickness of 110 nm by a plasma CVD method. Of course, the gate insulating film is not limited to the silicon oxynitride film, and other insulating films may be used as a single layer or a laminated structure.

When a silicon oxide film is used, TEOS (Tetraethyl Orthosilicate) is formed by the plasma CVD method.
And O ₂ are mixed, reaction pressure 40 Pa, substrate temperature 300-
400 ° C., high frequency (13.56 MHz) power density 0.
It can be formed by discharging at 5 to 0.8 W / cm ² .
The silicon oxide film formed in this manner has a thickness of 400
Good characteristics as a gate insulating film can be obtained by thermal annealing at ˜500 ° C.

Then, a film having a thickness of 20 is formed on the gate insulating film 407.
A first conductive film 408 having a thickness of 100 nm and a thickness of 100 to 4
A second conductive film 409 having a thickness of 00 nm is stacked. In this embodiment, a first conductive film 408 made of a TaN film having a thickness of 30 nm and a second conductive film 409 made of a W film having a thickness of 370 nm are stacked. The TaN film is formed by a sputtering method and is sputtered in an atmosphere containing nitrogen using a Ta target. The W film was formed by the sputtering method using a W target. Alternatively, it can be formed by a thermal CVD method using tungsten hexafluoride (WF ₆ ). In any case, it is necessary to reduce the resistance in order to use it as a gate electrode, and the resistivity of the W film is 20 μΩc.
It is desirable to be m or less.

In this embodiment, the first conductive film 408 is used.
Is TaN and the second conductive film 409 is W, but is not particularly limited, and Ta, W, Ti, Mo, Al, and C are all used.
It may be formed of an element selected from u, Cr, and Nd, or an alloy material or a compound material containing the above element as a main component. Alternatively, a semiconductor film typified by a polycrystalline silicon film doped with an impurity element such as phosphorus may be used. Also, A
A gPdCu alloy may be used.

Next, masks 410 to 415 made of resist are formed by photolithography, and a first etching process for forming electrodes and wirings is performed. The first etching process is performed under the first and second etching conditions. (FIG. 10B) In this embodiment, as the first etching condition, ICP (Inductively Coupled Plasma:
(Inductively coupled plasma) etching method, CF ₄ , Cl ₂ and O ₂ are used as etching gases, the flow rate ratio of each gas is set to 25:25:10 (sccm), and the coil type electrode is applied at a pressure of 1 Pa. RF (13.56 MHz) power of 500 W is applied to the substrate to generate plasma for etching. RF (13.56 MHz) power of 150 W is also applied to the substrate side (sample stage) to apply a substantially negative self-bias voltage. The W film is etched under the first etching condition so that the end portion of the first conductive layer is tapered.

After that, the masks 410 to 410 made of resist are formed.
Without removing 415, the second etching condition was changed, CF ₄ and Cl ₂ were used as etching gases, and the respective gas flow rate ratios were set to 30:30 (sccm) to form a coil-type electrode at a pressure of 1 Pa. RF (13.56 MHz) power of 500 W is applied to generate plasma and etching is performed for about 30 seconds. 20W RF (13.56MH) on the substrate side (sample stage)
z) Apply power and apply a substantially negative self-bias voltage. Under the second etching condition in which CF ₄ and Cl ₂ are mixed, the W film and the TaN film are etched to the same extent.
Note that in order to perform etching without leaving a residue on the gate insulating film, the etching time may be increased at a rate of about 10 to 20%.

In the first etching process, the shape of the mask made of resist is adjusted to
The edges of the first conductive layer and the second conductive layer are tapered due to the effect of the bias voltage applied to the substrate side. The angle of this tapered portion is 15 to 45 °. Thus, the first shape conductive layers 417 to 422 (first conductive layers 417a to 422a and second conductive layers 417b to 42) including the first conductive layer and the second conductive layer are formed by the first etching treatment.
2b) is formed. 416 is a gate insulating film,
The area not covered with the conductive layers 417 to 422 in the shape of 20 is 20
A thinned region is formed by etching about 50 nm.

Next, a second etching process is performed without removing the resist mask. (FIG. 10C) In this case, the W film is selectively etched by using CF ₄ , Cl _2, and O _{2 as} etching gas. At this time, the second conductive layers 428b to 433b are formed by the second etching treatment. On the other hand, the first conductive layers 417a to 422a are
Almost no etching is performed, and second conductive first layers 428a to 433a are formed.

Then, the first doping process is performed without removing the resist mask to add the impurity element imparting n-type to the semiconductor layer at a low concentration. The doping treatment may be performed by an ion doping method or an ion implantation method. The condition of the ion doping method is that the dose amount is 1 × 10 ^{13 to} 5
The acceleration voltage is set to × 10 ¹⁴ / cm ² and the acceleration voltage is set to 40 to 80 keV. In this embodiment, the dose amount is 1.5 × 10 ¹³ / c.
m ² and the accelerating voltage is 60 keV. An element belonging to Group 15 is used as the impurity element imparting n-type, typically phosphorus (P) or arsenic (As), but phosphorus (P) is used here. In this case, the conductive layers 428 to 433
Serves as a mask for the impurity element imparting n-type, and impurity regions 423 to 427 are formed in a self-aligned manner. In the impurity regions 423 to 427, 1 × 10 ¹⁸ to 1 × 10 ²⁰ /
An impurity element imparting n-type is added within the concentration range of cm ³ .

After removing the masks made of resist, new masks 434a to 434c made of resist are formed, and the second doping process is performed at an acceleration voltage higher than that of the first doping process. The conditions of the ion doping method are a dose amount of 1 × 10 ¹³ to 1 × 10 ¹⁵ / cm ² and an acceleration voltage of 60.
~ 120 keV. In the doping process, the second conductive layers 428b to 432b are used as a mask for the impurity element, and doping is performed so that the semiconductor layer below the tapered portion of the first conductive layer is added with the impurity element. Subsequently, the acceleration voltage is lowered from the second doping process and the third doping process is performed to obtain the state of FIG. The condition of the ion doping method is that the dose amount is 1 × 10 ¹⁵ to 1 × 10 5.
^The acceleration voltage is set to ¹⁷ / cm ² and the acceleration voltage is set to 50 to 100 keV. By the second doping treatment and the third doping treatment, the low-concentration impurity region 43 overlapping with the first conductive layer 43 is formed.
6, 442 and 448 are added with an impurity element imparting n-type in a concentration range of 1 × 10 ^{18 to} 5 × 10 ¹⁹ / cm ³ , and 1 × is added to the high concentration impurity regions 435, 441, 444 and 447.
An impurity element imparting n-type is added within a concentration range of 10 ^{19 to} 5 × 10 ²¹ / cm ³ .

Of course, by setting an appropriate acceleration voltage,
The second doping process and the third doping process are 1
It is possible to form the low-concentration impurity region and the high-concentration impurity region by performing the doping process once.

Next, after removing the resist masks, new resist masks 450a to 450a are formed.
c is formed and a fourth doping process is performed. By the fourth doping process, impurity regions 453, 454, 4 in which an impurity element imparting a conductivity type opposite to the one conductivity type is added to a semiconductor layer which becomes an active layer of a p-channel TFT.
59 and 460 are formed. Second conductive layers 429b and 43
2b is used as a mask for the impurity element, an impurity element imparting p-type conductivity is added, and an impurity region is formed in a self-aligned manner. In this embodiment, the impurity regions 453, 454,
459 and 460 are formed by an ion doping method using diborane (B ₂ H ₆ ). (FIG. 11B) During this fourth doping process, the semiconductor layer forming the n-channel TFT is covered with masks 450a to 450c made of resist. By the first to third doping processes, phosphorus is added to the impurity regions 453, 454, 459, and 460 at different concentrations, and the concentration of the impurity element imparting p-type is 1 × in any of the regions. 10
^By performing the doping process so as to have a concentration of ^{19 to} 5 × 10 ²¹ atoms / cm ³ , there is no problem because it functions as a source region and a drain region of the p-channel TFT.

Through the above steps, the impurity regions are formed in the respective semiconductor layers.

Next, a mask 450a made of resist
To 450c are removed to form a first interlayer insulating film 461. As the first interlayer insulating film 461, plasma C is used.
The thickness is 100 to 200 using the VD method or the sputtering method.
It is formed of an insulating film containing silicon as nm. In this embodiment, a silicon oxynitride film having a thickness of 150 nm is formed by a plasma CVD method. Of course, the first interlayer insulating film 461 is not limited to the silicon oxynitride film, and another insulating film containing silicon may be used as a single layer or a laminated structure.

Next, laser light is irradiated to recover the crystallinity of the semiconductor layers and activate the impurity elements added to the respective semiconductor layers. Laser activation is performed by irradiating a semiconductor film with laser light by using any one of the embodiment mode and Embodiments 1 to 3, or by freely combining these embodiments. The laser used is preferably a continuous wave or pulsed solid-state laser, a gas laser, or a metal laser. As the solid-state laser, continuous oscillation or pulse oscillation YAG laser, YVO ₄ laser, YLF laser, YAlO ₃ laser, Y ₂ O ₃ laser, glass laser,
There is a ruby laser, an alexandride laser, a Ti: sapphire laser, etc., and as the gas laser, there is a continuous or pulsed KrF excimer laser, an Ar laser, a Kr laser, a CO ₂ laser, etc., and the metal laser is a continuous oscillation. Alternatively, a pulsed helium cadmium laser, a copper vapor laser, or a gold vapor laser can be given. At this time, if a continuous wave laser is used,
Energy density of laser light is 0.01-100 MW / c
m ² (preferably 0.01 to 10 MW / cm ² ) is required, and the substrate is 0.5 to 2 relative to the laser light.
Move at a speed of 000 cm / s. If a pulsed laser is used, the frequency is 300 Hz,
The laser energy density is preferably 50 to 1000 mJ / cm ² (typically 50 to 500 mJ / cm ² ). At this time, the laser light may be overlapped by 50 to 98% in the scanning direction. In addition to the laser annealing method, a thermal annealing method or a rapid thermal annealing method (RTA
Law) etc. can be applied.

Further, activation may be performed before forming the first interlayer insulating film. However, when the wiring material used is weak against heat, activation is performed after forming an interlayer insulating film (insulating film containing silicon as a main component, for example, a silicon nitride film) to protect the wiring and the like as in this embodiment. It is preferable to carry out a chemical treatment.

Then, heat treatment (at 300 to 550 ° C. 1 to
Hydrogenation can be performed by performing heat treatment for 12 hours. This step is a step of terminating the dangling bond of the semiconductor layer with hydrogen contained in the first interlayer insulating film 461. The semiconductor layer can be hydrogenated regardless of the presence of the first interlayer insulating film. Plasma hydrogenation (using hydrogen excited by plasma) as another means of hydrogenation
Or 300 to 45 in an atmosphere containing 3 to 100% hydrogen
You may perform heat processing for 1 to 12 hours at 0 degreeC.

Next, a second interlayer insulating film 462 made of an inorganic insulating film material or an organic insulating material is formed on the first interlayer insulating film 461. In this embodiment, the film thickness is 1.6 μm
The acrylic resin film of
cp, preferably 40 to 200 cp, and the one having irregularities on the surface is used.

In this embodiment, in order to prevent specular reflection, the second interlayer insulating film having unevenness is formed on the surface to form the unevenness on the surface of the pixel electrode. Further, in order to make the surface of the pixel electrode uneven so as to achieve light scattering, a convex portion may be formed in a region below the pixel electrode. In that case, since the projection can be formed using the same photomask as that for forming the TFT, the projection can be formed without increasing the number of steps. Note that this convex portion may be appropriately provided on the substrate in the pixel portion region other than the wiring and the TFT portion. Thus, the unevenness is formed on the surface of the pixel electrode along the unevenness formed on the surface of the insulating film covering the convex portion.

A film having a flat surface may be used as the second interlayer insulating film 462. In that case, after forming the pixel electrode, a step such as a known sandblasting method or etching method is added to make the surface uneven so as to prevent specular reflection and scatter reflected light to increase the whiteness. Is preferred.

Then, in the drive circuit 506, wirings 463 to 467 electrically connected to the respective impurity regions.
To form. Note that these wirings have a thickness of 50 nm.
A laminated film of an i film and an alloy film (alloy film of Al and Ti) having a film thickness of 500 nm is formed by patterning. Of course, the structure is not limited to the two-layer structure, and may be a single-layer structure or a laminated structure of three or more layers. Also, as the wiring material,
It is not limited to Al and Ti. For example, Al or C on the TaN film
Wiring may be formed by forming u and then patterning a laminated film having a Ti film formed thereon. (Figure 12)

In addition, in the pixel portion 507, the pixel electrode 470, the gate wiring 469, and the connection electrode 468 are formed. By this connection electrode 468, the source wiring (a stack of 433a and 433b) is electrically connected to the pixel TFT. The gate wiring 469 is electrically connected to the gate electrode of the pixel TFT. Also, the pixel electrode 4
70 is electrically connected to the drain region of the pixel TFT, and is further electrically connected to the semiconductor layer 458 which functions as one electrode forming a storage capacitor. Further, as the pixel electrode 470, it is desirable to use a material having excellent reflectivity such as a film containing Al or Ag as a main component, or a laminated film thereof.

As described above, the n-channel TFT 50
1 and a p-channel TFT 502 CMOS circuit,
And driving circuit 506 having n-channel TFT 503
Then, the pixel portion 507 including the pixel TFT 504 and the storage capacitor 505 can be formed over the same substrate. Thus, the active matrix substrate is completed.

N-channel TFT 50 of drive circuit 506
Reference numeral 1 denotes a channel formation region 437, and a low-concentration impurity region 4 overlapping with the first conductive layer 428a forming part of the gate electrode.
36 (GOLD region), a high-concentration impurity region 452 which functions as a source region or a drain region.
The p-channel TFT 502, which is connected to the n-channel TFT 501 with an electrode 466 to form a CMOS circuit, has a channel formation region 440, a high-concentration impurity region 453 which functions as a source region or a drain region, and a low-concentration impurity region 454. is doing. In addition, n-channel TF
T503 has a channel formation region 443, a low-concentration impurity region 442 (GOLD region) overlapping with the first conductive layer 430a which forms part of a gate electrode, and a high-concentration impurity region 456 which functions as a source or drain region. ing.

The pixel TFT 504 in the pixel portion has a channel formation region 446, a low concentration impurity region 445 (LDD region) formed outside the gate electrode, and a high concentration impurity region 458 which functions as a source region or a drain region. There is. In the semiconductor layer functioning as one electrode of the storage capacitor 505, an impurity element imparting n-type conductivity and p
An impurity element that imparts a mold is added. Storage capacity 5
05 is an electrode (432a) using the insulating film 416 as a dielectric.
And 432b) and a semiconductor layer.

In the pixel structure of this embodiment, the end portions of the pixel electrodes are arranged and overlapped with the source wirings so that the gaps between the pixel electrodes are shielded from light without using the black matrix.

A top view of the pixel portion of the active matrix substrate manufactured in this embodiment is shown in FIG. The same reference numerals are used for the parts corresponding to those in FIGS. A chain line AA ′ in FIG. 12 is a chain line AA ′ in FIG.
It corresponds to the cross-sectional view cut at. Further, the chain line BB ′ in FIG. 12 corresponds to the cross-sectional view taken along the chain line BB ′ in FIG. 13.

[Embodiment 7] In this embodiment, a process of manufacturing a reflective liquid crystal display device from the active matrix substrate manufactured in Embodiment 6 will be described below. 14 for the explanation.
To use.

First, according to the sixth embodiment, after obtaining the active matrix substrate in the state of FIG. 12, the alignment film 567 is formed on at least the pixel electrode 470 on the active matrix substrate of FIG. 12, and rubbing treatment is performed. In this embodiment, before forming the alignment film 567, the organic resin film such as the acrylic resin film is patterned to form the columnar spacers 572 for holding the substrate distance at desired positions. Further, spherical spacers may be dispersed over the entire surface of the substrate instead of the columnar spacers.

Next, the counter substrate 569 is prepared. Next, the coloring layers 570 and 571 and the planarization film 573 are formed over the counter substrate 569. The red colored layer 570 and the blue colored layer 571 are overlapped with each other to form a light shielding portion. In addition, the light-shielding portion may be formed by partially overlapping the red colored layer and the green colored layer.

In this example, the substrate shown in Example 6 is used. Therefore, FIG. 1 showing a top view of the pixel portion of the sixth embodiment.
3 at least the gate wiring 469 and the pixel electrode 470.
It is necessary to shield light from the gap between the gate wiring 469 and the connection electrode 468, and the gap between the connection electrode 468 and the pixel electrode 470. In this example, the colored layers were arranged so that the light-shielding portions formed by stacking the colored layers were overlapped with each other at the positions where they should be shielded, and the counter substrates were bonded together.

As described above, it is possible to reduce the number of steps by forming a light-shielding portion formed of a stack of colored layers so as to shield the gaps between pixels without forming a light-shielding layer such as a black mask.

Next, a counter electrode 576 made of a transparent conductive film was formed on the flattening film 573 at least in the pixel portion, an alignment film 574 was formed on the entire surface of the counter substrate, and a rubbing treatment was performed.

Then, the active matrix substrate on which the pixel portion and the driving circuit are formed and the counter substrate are sealed with a sealing material 568.
Stick together. A filler is mixed in the sealing material 568, and the two substrates are bonded to each other with a uniform interval by the filler and the columnar spacers. afterwards,
A liquid crystal material 575 is injected between both substrates and completely sealed with a sealant (not shown). A known liquid crystal material may be used as the liquid crystal material 575. In this way, the reflection type liquid crystal display device shown in FIG. 14 is completed. Then, if necessary, the active matrix substrate or the counter substrate is cut into a desired shape. Further, a polarizing plate (not shown) was attached only to the counter substrate. Then, using a known technique, F
I stuck a PC.

The liquid crystal display device manufactured as described above has a TFT manufactured using a semiconductor film uniformly annealed by a laser beam having a sufficient energy density. The characteristics and reliability can be sufficient. Then, such a liquid crystal display device can be used as a display portion of various electronic devices.

This embodiment can be freely combined with Embodiments 1 to 6.

[Embodiment 8] In this embodiment, a TFT for manufacturing the active matrix substrate shown in Embodiment 6 is used.
An example in which a light-emitting device is manufactured by using the manufacturing method of will be described. In the present specification, a light emitting device is a generic term for a display panel in which a light emitting element formed on a substrate is enclosed between the substrate and a cover material, and a display module including a TFT on the display panel. is there. Note that the light-emitting element has a luminescence (Elec
It has a layer (light emitting layer) containing an organic compound for which tro luminescence is obtained, an anode layer, and a cathode layer. In addition, luminescence in an organic compound includes light emission when returning from a singlet excited state to a ground state (fluorescence) and light emission when returning from a triplet excited state to a ground state (phosphorescence). Alternatively, it includes both luminescence.

In the present specification, all layers formed between the anode and the cathode in the light emitting device are defined as organic light emitting layers. The organic light emitting layer specifically includes a light emitting layer, a hole injection layer, an electron injection layer, a hole transport layer, an electron transport layer, and the like. Basically, a light emitting device has a structure in which an anode layer, a light emitting layer, and a cathode layer are sequentially stacked. In addition to this structure, an anode layer, a hole injection layer, a light emitting layer, a cathode layer, and an anode layer are provided. It may have a structure in which a hole injecting layer, a light emitting layer, an electron transporting layer, a cathode layer and the like are laminated in this order.

FIG. 15 is a sectional view of the light emitting device of this embodiment. In FIG. 15, the switching TFT 603 provided on the substrate 700 is the n-channel TFT 50 of FIG.
3 is used. Therefore, the description of the structure may be referred to the description of the n-channel TFT 503.

Although the double gate structure in which two channel forming regions are formed is used in this embodiment, a single gate structure in which one channel forming region is formed or a triple gate structure in which three channel forming regions are formed is also possible. good.

The drive circuit provided on the substrate 700 is shown in FIG.
It is formed using two CMOS circuits. Therefore, the description of the structure is given by the n-channel TFT 501 and the p-channel TFT.
The description of 502 may be referred to. Although a single gate structure is used in this embodiment, a double gate structure or a triple gate structure may be used.

The wirings 701 and 703 function as a source wiring of the CMOS circuit, and 702 functions as a drain wiring.
The wiring 704 is connected to the source wiring 708 and the switching T.
The wiring 705 functions as a wiring that electrically connects the source region of the FT, and the wiring 705 is connected to the drain wiring 709 and the switching T.
It functions as a wiring that electrically connects the drain region of the FT.

The current control TFT 604 is p-type in FIG.
It is formed using the channel TFT 502. Therefore,
For the description of the structure, the description of the p-channel TFT 502 may be referred to. Although a single gate structure is used in this embodiment, a double gate structure or a triple gate structure may be used.

Further, the wiring 706 is a source wiring (corresponding to a current supply line) of the current control TFT, and 707 is an electrode electrically connected to the pixel electrode 711 by being overlapped on the pixel electrode 711 of the current control TFT. is there.

711 is a pixel electrode (anode of a light emitting element) made of a transparent conductive film. As the transparent conductive film,
A compound of indium oxide and tin oxide, a compound of indium oxide and zinc oxide, zinc oxide, tin oxide, or indium oxide can be used. Moreover, you may use what added gallium to the said transparent conductive film. The pixel electrode 711 has a flat interlayer insulating film 7 before the wiring is formed.
Form on 10. In this embodiment, it is very important to flatten the step due to the TFT by using the flattening film 710 made of resin. Since the light emitting layer that is formed later is very thin, the light emitting failure may occur due to the existence of the step. Therefore, it is desirable to flatten the light emitting layer before forming the pixel electrode so that the light emitting layer can be formed as flat as possible.

After forming the wirings 701 to 707, a bank 712 is formed as shown in FIG. Bank 712 is 10
It may be formed by patterning an insulating film containing 0 to 400 nm of silicon or an organic resin film.

Since the bank 712 is an insulating film,
Attention must be paid to the electrostatic breakdown of the device during film formation.
In this embodiment, carbon particles or metal particles are added to the insulating film that is the material of the bank 712 to lower the resistivity and suppress the generation of static electricity. At this time, the resistivity is 1 × 10 ⁶ to 1 × 1.
The addition amount of carbon particles or metal particles may be adjusted so as to be 0 ¹² Ωm (preferably 1 × 10 ⁸ to 1 × 10 ¹⁰ Ωm).

A light emitting layer 713 is formed on the pixel electrode 711. Although only one pixel is shown in FIG. 15, the light emitting layers corresponding to the colors R (red), G (green), and B (blue) are separately formed in this embodiment. Further, in this embodiment, the low molecular weight organic light emitting material is formed by the vapor deposition method.
Specifically, a 20-nm-thick copper phthalocyanine (CuPc) film is provided as a hole injection layer, and a 7-nm light emitting layer is formed thereon.
It has a laminated structure in which a 0 nm thick tris-8-quinolinolato aluminum complex (Alq ₃ ) film is provided. The emission color can be controlled by adding a fluorescent dye such as quinacridone, perylene or DCM1 to Alq ₃ .

However, the above example is an example of an organic light emitting material that can be used as a light emitting layer, and it is not necessary to limit to this. The light emitting layer (charge transporting layer or charge injecting layer) may be freely combined to form a light emitting layer (a layer for emitting light and for moving carriers therefor). For example, in this embodiment, an example in which a low molecular weight organic light emitting material is used as the light emitting layer is shown, but a medium molecular weight organic light emitting material or a high molecular weight organic light emitting material may be used. In the present specification, an organic light-emitting material having no sublimability and having a number of molecules of 20 or less or a chain of molecules having a length of 10 μm or less is referred to as a medium molecule organic light-emitting material. In addition, as an example of using a polymer organic light emitting material, the hole injection layer has a thickness of 20 nm.
Alternatively, a polythiophene (PEDOT) film may be provided by a spin coating method, and a para-phenylene vinylene (PPV) film having a thickness of about 100 nm may be provided on the polythiophene (PEDOT) film as a laminated structure. By using a PPV π-conjugated polymer, the emission wavelength can be selected from red to blue. Further, it is also possible to use an inorganic material such as silicon carbide for the charge transport layer and the charge injection layer. Known materials can be used as these organic light emitting materials and inorganic materials.

Next, a cathode 714 made of a conductive film is provided on the light emitting layer 713. In this embodiment, an alloy film of aluminum and lithium is used as the conductive film. Of course, a well-known MgAg film (an alloy film of magnesium and silver)
May be used. As the cathode material, a conductive film made of an element belonging to Group 1 or 2 of the periodic table or a conductive film to which those elements are added may be used.

The light emitting element 715 is completed when the cathode 714 is formed. The light emitting element 71 referred to here
Reference numeral 5 denotes a diode formed by the pixel electrode (anode) 711, the light emitting layer 713 and the cathode 714.

It is effective to provide the passivation film 716 so as to completely cover the light emitting element 715. As the passivation film 716, an insulating film including a carbon film, a silicon nitride film, or a silicon nitride oxide film is used, and the insulating films are used as a single layer or a stacked layer in which they are combined.

At this time, it is preferable to use a film having good coverage as the passivation film, and a carbon film, especially D
It is effective to use an LC film. Since the DLC film can be formed in a temperature range from room temperature to 100 ° C. or lower, it can be easily formed over the light-emitting layer 713 having low heat resistance. In addition, the DLC film has a high blocking effect on oxygen and can suppress oxidation of the light emitting layer 713. Therefore, it is possible to prevent the problem that the light emitting layer 713 is oxidized during the subsequent sealing step.

Further, a sealing material 717 is provided on the passivation film 716, and a cover material 718 is attached. An ultraviolet curable resin may be used as the sealing material 717, and it is effective to provide a substance having a moisture absorption effect or a substance having an antioxidant effect inside. In this embodiment, the cover material 718 is a glass substrate, a quartz substrate, a plastic substrate (including a plastic film), or a flexible substrate having a carbon film (preferably a DLC film) formed on both sides. Besides carbon film, aluminum film (AlON, Al
N, AlO, etc.), SiN, etc. can be used.

Thus, the light emitting device having the structure shown in FIG. 15 is completed. Note that it is effective to continuously perform the steps from the formation of the bank 712 to the formation of the passivation film 716 using a multi-chamber system (or in-line system) film formation apparatus without exposing to the atmosphere. . Further, it is also possible to further develop and continuously process up to the step of attaching the cover material 718 without exposing to the atmosphere.

Thus, the n-channel type T
FT 601, p-channel TFT 602, switching TFT (n-channel TFT) 603 and current control T
An FT (p-channel TFT) 604 is formed.

Furthermore, as described with reference to FIG.
By providing an impurity region overlapping the gate electrode with an insulating film interposed therebetween, n which is resistant to deterioration due to the hot carrier effect is used.
A channel TFT can be formed. for that reason,
It is possible to realize a highly reliable light emitting device.

Further, in this embodiment, only the configurations of the pixel portion and the drive circuit are shown, but according to the manufacturing process of this embodiment, in addition, a signal dividing circuit, a D / A converter, an operational amplifier, a γ correction circuit, etc. Can be formed on the same insulator, and further, a memory and a microprocessor can be formed.

The light-emitting device manufactured as described above has a TFT manufactured using a semiconductor film uniformly annealed by a laser beam having a sufficient energy density. Credibility can be sufficient. Then, such a light emitting device can be used as a display portion of various electronic devices.

This embodiment can be freely combined with Embodiments 1 to 6.

[Embodiment 9] By applying the present invention, various semiconductor devices (active matrix liquid crystal display device, active matrix light emitting device, active matrix EC display device) can be manufactured. That is, the present invention can be applied to various electronic devices in which those electro-optical devices are incorporated in the display unit.

Examples of such electronic devices include video cameras, digital cameras, projectors, head mounted displays (goggles type displays), car navigation systems, car stereos, personal computers, personal digital assistants (mobile computers, mobile phones, electronic books, etc.). ) And the like. Examples of these are shown in FIGS. 16, 17 and 18.

FIG. 16A shows a personal computer, which has a main body 3001, an image input section 3002, and a display section 30.
03, keyboard 3004 and the like. By applying the semiconductor device manufactured according to the present invention to the display portion 3003,
The personal computer of the present invention is completed.

FIG. 16B shows a video camera, which includes a main body 3101, a display portion 3102, a voice input portion 3103, operation switches 3104, a battery 3105, and an image receiving portion 310.
Including 6 etc. The video camera of the present invention is completed by applying the semiconductor device manufactured by the present invention to the display portion 3102.

FIG. 16C shows a mobile computer (mobile computer), which includes a main body 3201, a camera portion 3202, an image receiving portion 3203, operation switches 3204, a display portion 3205, and the like. The mobile computer of the present invention is completed by applying the semiconductor device manufactured by the present invention to the display portion 3205.

FIG. 16D shows a goggle type display, which includes a main body 3301, a display section 3302 and an arm section 330.
Including 3 etc. The display portion 3302 uses a flexible substrate as a substrate, and the display portion 3302 is bent to manufacture a goggle type display. It also realizes a lightweight and thin goggle type display. The goggle type display of the present invention is completed by applying the semiconductor device manufactured by the present invention to the display portion 3302.

FIG. 16E shows a player using a recording medium (hereinafter referred to as a recording medium) in which a program is recorded, which is a main body 3401, a display section 3402, a speaker section 340.
3, a recording medium 3404, operation switches 3405 and the like. This player uses a DVD (D
digital Versatile Disc), CD
It is possible to play music, watch movies, play games, and use the internet. The recording medium of the present invention is completed by applying the semiconductor device manufactured by the present invention to the display portion 3402.

FIG. 16F shows a digital camera, which includes a main body 3501, a display portion 3502, an eyepiece portion 3503, operation switches 3504, an image receiving portion (not shown) and the like. The digital camera of the present invention is completed by applying the semiconductor device manufactured by the present invention to the display portion 3502.

FIG. 17A shows a front type projector including a projection device 3601, a screen 3602 and the like. The projection device 36 is a semiconductor device manufactured by the present invention.
01 is applied to the liquid crystal display device 3808 which constitutes a part of No. 01 and other drive circuits, the front type projector of the present invention is completed.

FIG. 17B shows a rear type projector, which includes a main body 3701, a projection device 3702, and a mirror 370.
3, screen 3704 and the like. By applying the semiconductor device manufactured by the present invention to the liquid crystal display device 3808 which forms a part of the projection device 3702 and other drive circuits, the rear projector of the present invention is completed.

Note that FIG. 17C is a diagram showing an example of the structure of the projection devices 3601 and 3702 in FIGS. 17A and 17B. Projection devices 3601, 37
02 is a light source optical system 3801, mirrors 3802, 380
4 to 3806, dichroic mirror 3803, prism 3807, liquid crystal display device 3808, retardation plate 380.
9, a projection optical system 3810. Projection optical system 38
Reference numeral 10 is composed of an optical system including a projection lens. Although the present embodiment shows an example of a three-plate type, it is not particularly limited and may be, for example, a single-plate type. In addition, the practitioner may appropriately provide an optical system such as an optical lens, a film having a polarization function, a film for adjusting a phase difference, and an IR film in the optical path indicated by an arrow in FIG. 17C. Good.

FIG. 17D is a diagram showing an example of the structure of the light source optical system 3801 in FIG. 17C. In this embodiment, the light source optical system 3801 includes the reflector 3811, the light source 3812, the lens arrays 3813, and 3.
814, a polarization conversion element 3815, and a condenser lens 3816. Note that the light source optical system shown in FIG. 17D is an example and is not particularly limited. For example, the practitioner may appropriately provide an optical system such as an optical lens, a film having a polarization function, a film for adjusting a phase difference, and an IR film in the light source optical system.

However, the projector shown in FIG. 17 shows a case where a transmissive electro-optical device is used, and application examples in a reflective electro-optical device and a light emitting device are not shown.

FIG. 18A shows a mobile phone, which is a main body 39.
01, voice output unit 3902, voice input unit 3903, display unit 3904, operation switch 3905, antenna 3906
Including etc. The mobile phone of the present invention is completed by applying the semiconductor device manufactured by the present invention to the display portion 3904.

FIG. 18B shows a portable book (electronic book) including a main body 4001, display portions 4002 and 4003, a storage medium 4004, operation switches 4005, an antenna 4006.
Including etc. The portable book of the present invention is completed by applying the semiconductor device manufactured by the present invention to the display portions 4002 and 4003.

FIG. 18C shows a display, which includes a main body 4101, a support base 4102, a display portion 4103 and the like.
The display portion 4103 is manufactured using a flexible substrate,
A lightweight and thin display can be realized. In addition, the display unit 4
It is also possible to bend 103. The display of the present invention is completed by applying the semiconductor device manufactured by the present invention to the display portion 4103. The display of the present invention is particularly advantageous when it has a large screen, and is advantageous for a display having a diagonal of 10 inches or more (particularly 30 inches or more).

As described above, the applicable range of the present invention is so wide that it can be applied to electronic devices in various fields. Further, the electronic device of the present embodiment can also be realized by using a configuration including a combination of the first to seventh or eighth embodiments.

[0158]

By adopting the structure of the present invention, the following basic significance can be obtained. (A) It is possible to form a laser beam having an excellent energy density distribution on the irradiation surface or a plane in the vicinity thereof. (B) The object to be irradiated can be uniformly annealed. In particular, it is suitable for crystallization of a semiconductor film, improvement of crystallinity, and activation of an impurity element. (C) It is possible to improve throughput. (D) In addition to satisfying the above advantages, in a semiconductor device represented by an active matrix type liquid crystal display device,
It is possible to improve the operating characteristics and reliability of the semiconductor device. Further, it is possible to reduce the manufacturing cost of the semiconductor device.

[Brief description of drawings]

FIG. 1 is a diagram showing an example of laser light formed on an irradiation surface disclosed by the present invention.

FIG. 2 is a diagram showing an example of a laser irradiation apparatus disclosed in the present invention.

FIG. 3 is a diagram showing an example of a laser irradiation apparatus disclosed in the present invention.

FIG. 4 is a diagram showing an example of a laser irradiation apparatus disclosed in the present invention.

FIG. 5 is a graph showing transmittance with respect to wavelength in a 1737 glass substrate.

FIG. 6 is a diagram showing the transmittance of a quartz substrate with respect to wavelength.

FIG. 7 is a diagram showing an example of a method for crystallizing a semiconductor film by using the present invention.

FIG. 8 is a diagram showing an example of a method for crystallizing a semiconductor film by using the present invention.

FIG. 9 is a diagram showing an example of conventional laser light formed on an irradiation surface.

FIG. 10 is a cross-sectional view showing a manufacturing process of a pixel TFT and a driver circuit TFT.

11A to 11C are cross-sectional views illustrating a manufacturing process of a pixel TFT and a driver circuit TFT.

FIG. 12 is a cross-sectional view showing a manufacturing process of a pixel TFT and a driver circuit TFT.

FIG. 13 is a top view showing a configuration of a pixel TFT.

14A to 14C are cross-sectional views illustrating a manufacturing process of an active matrix liquid crystal display device.

FIG. 15 is a cross-sectional structure diagram of a driver circuit and a pixel portion of a light emitting device.

FIG. 16 illustrates an example of a semiconductor device.

FIG. 17 illustrates an example of a semiconductor device.

FIG. 18 illustrates an example of a semiconductor device.

FIG. 19 is a diagram showing an example of distribution of energy density of laser light formed on an irradiation surface disclosed by the present invention.

FIG. 20 is a diagram showing an example of a relationship between a laser output and a crystallization region.

Continued front page    F-term (reference) 2H092 GA29 GA59 JA25 JA29 JA33                       JA38 JA46 JB52 JB54 KA02                       KA04 KA05 KA10 KA12 KA16                       KA18 KA19 KB24 KB25 MA05                       MA07 MA08 MA10 MA13 MA17                       MA20 MA22 MA27 MA29 MA30                       MA35 NA24 NA25 PA01 PA06                       PA07 RA05                 5F052 AA02 AA17 AA24 BA07 BA14                       BB01 BB02 BB05 BB06 BB07                       CA07 DA02 DA03 DA10 DB02                       DB03 DB07 FA06 JA01 JA04                 5F110 AA01 BB02 BB04 CC02 DD01                       DD02 DD03 DD05 DD12 DD13                       DD14 DD15 DD17 EE01 EE02                       EE03 EE04 EE06 EE09 EE14                       EE23 EE28 EE44 EE45 FF02                       FF04 FF28 FF30 FF36 GG01                       GG02 GG13 GG24 GG25 GG32                       GG43 GG45 GG47 HJ01 HJ04                       HJ12 HJ13 HJ23 HL01 HL02                       HL03 HL04 HL06 HL11 HL12                       HM15 NN03 NN04 NN22 NN27                       NN34 NN35 NN71 NN72 PP01                       PP02 PP03 PP04 PP05 PP06                       PP07 PP34 PP35 QQ04 QQ11                       QQ19 QQ23 QQ24 QQ25

Claims (10)

[Claims] 1. A plurality of lasers, and means for cutting a laser light spot of one of a plurality of laser lights emitted from the plurality of lasers to divide the spot into two and inverting the spot.
On the irradiated object, a laser irradiation device having a means for forming the plurality of laser lights in a linear shape by superimposing them on one another, on the irradiated object, the laser light divided by the dividing means. A laser irradiation device characterized in that they do not overlap each other. 2. A plurality of lasers, and means for cutting a laser light spot of one of a plurality of laser light emitted from the plurality of lasers to divide the spot into two and inverting the spot.
On the irradiated body, means for expanding the divided laser light spots in a direction perpendicular to the cut surface of the laser light spots divided by the dividing means to form a linear shape, and on the irradiated body In another means for forming the shape of the plurality of laser light in a linear shape, and on the irradiation target, a plurality of laser light linearly formed by the means for forming a linear shape in the longitudinal direction. A laser irradiating device having a unit for forming a superposed linear shape, wherein the linear laser beam superposed by the means for forming a superposed linear shape on the object to be irradiated is previously divided. A laser irradiation device, characterized in that the cut surfaces of the generated laser light are both ends in the longitudinal direction, and the divided laser lights do not overlap each other on the irradiation target. 3. The laser according to claim 1 or 2, wherein the linear laser light superposed by the superposing linear means has an attenuation region in the longitudinal direction of 200 μm or less. Light irradiation device. 4. The method according to any one of claims 1 to 3,
The wavelength of the laser beam is 400 nm or more, The laser irradiation apparatus characterized by the above-mentioned. 5. The method according to any one of claims 1 to 4,
The laser irradiation device is characterized in that the laser light spot is divided into equal parts. 6. The method according to any one of claims 1 to 5,
The laser irradiation device is characterized in that the laser is a continuous wave or pulsed solid-state laser, a gas laser or a metal laser. 7. The method according to any one of claims 1 to 6,
The laser is a continuous wave or pulsed YAG laser, YVO ₄ laser, YLF laser, YAlO ₃ laser,
A laser irradiation device characterized by being a kind selected from a Y ₂ O ₃ laser, a glass laser, a ruby laser, an alexandrite laser, and a Ti: sapphire laser. 8. The method according to any one of claims 1 to 6,
The laser irradiation device is characterized in that the laser is one kind selected from an excimer laser, an Ar laser, a Kr laser, and a CO ₂ laser. 9. The method according to any one of claims 1 to 6,
The laser irradiation device is characterized in that the laser is one selected from a helium cadmium laser, a copper vapor laser, and a gold vapor laser. 10. The laser irradiation apparatus according to claim 1, wherein the laser light is converted into a harmonic by a non-linear optical element.