JP3949709B2 - Laser irradiation apparatus, laser irradiation method, and manufacturing method of semiconductor device - Google Patents

Description

  The present invention relates to a method of irradiating an object to be processed using laser light (hereinafter referred to as laser annealing) and a laser irradiation apparatus for performing the method (for guiding a laser and laser light output from the laser to the object to be processed). An apparatus including an optical system). Further, the present invention relates to a method for manufacturing a semiconductor device manufactured by including the laser light irradiation in a process. The semiconductor device here refers to all devices that can function by utilizing semiconductor characteristics, and includes an electro-optical device such as a liquid crystal display device and a light-emitting device, and an electronic device including the electro-optical device as a component. Shall.

  In recent years, a technique for crystallizing a semiconductor film formed on an insulating substrate such as glass by laser annealing to improve crystallinity has been widely studied. Silicon is often used for the semiconductor film. In this specification, means for crystallizing a semiconductor film with laser light to obtain a crystalline semiconductor film is called laser crystallization.

  The glass substrate is cheaper and more workable than the synthetic quartz glass substrate that has been often used in the past, and has an advantage that a large-area substrate can be easily manufactured. This is the reason for the above research. In addition, the reason why lasers are used favorably for crystallization is that the melting point of the glass substrate is low. The laser can give high energy only to the semiconductor film without increasing the temperature of the substrate so much. In addition, the throughput is significantly higher than that of heating means using an electric furnace.

  Since a crystalline semiconductor film formed by laser light irradiation has high mobility, a thin film transistor (TFT) is formed using the crystalline semiconductor film, for example, on a single glass substrate. Alternatively, it is used in an active matrix type liquid crystal display device or the like for manufacturing TFTs for pixel portions and driving circuits.

  As the laser beam, a laser beam oscillated from an Ar laser or an excimer laser is often used. Laser crystallization is performed using an Ar laser (see, for example, Patent Document 1 or Patent Document 2). In addition, the excimer laser has an advantage that it has a large output and can be repeatedly irradiated at a high frequency. Laser light oscillated from these lasers has an advantage of a high absorption coefficient for a silicon film often used as a semiconductor film.

For the laser light irradiation, the laser light is shaped by an optical system so that the shape at or near the irradiated surface is elliptical, rectangular or linear, and the laser light is moved (or the laser light is irradiated). The method of irradiating by moving the irradiation position relative to the irradiation surface is highly productive and industrially excellent. In addition, “linear” here does not mean “line” in a strict sense, but means a rectangle (or oval) having a large aspect ratio. For example, the aspect ratio is 10 or more (preferably 100 to 10,000). In this specification, the laser beam on the irradiation surface is an elliptical beam, the rectangular beam is a rectangular beam, and the linear beam is a linear beam.
JP-A-6-163401 JP-A-7-326769

  In general, the end of an elliptical, rectangular or linear laser beam formed on or near the irradiated surface by an optical system that does not use a beam homogenizer has a peak at the center due to lens aberration, etc. The energy density gradually decays. (FIG. 8) In such a laser beam, the region having an energy density sufficient to irradiate the irradiated object is very narrow, about 1/5 to 1/3 including the central portion of the laser beam. . In this way, the region where the energy density for irradiating the irradiated object is insufficient is set as the attenuation region at the end of the laser beam.

  Further, with the increase in the area of the substrate and the increase in the output of the laser, longer elliptical beams, linear beams, and rectangular beams are formed. This is because it is more efficient to irradiate with such laser light. However, since the energy density at the end of the laser beam oscillated from the laser is small compared to the vicinity of the center, the attenuation region tends to become more prominent when the optical system expands more than before.

  The attenuation region does not have sufficient energy density as compared with the central portion of the laser beam, and even if irradiation is performed using the laser beam having the attenuation region, sufficient irradiation cannot be performed on the object to be processed.

  For example, when the irradiated object is a semiconductor film, the crystallinity is different between the region irradiated by the attenuation region and the region irradiated by the high energy density region including the central portion. For this reason, even if a TFT is manufactured using such a semiconductor film, the electrical characteristics of the TFT manufactured in the region irradiated by the attenuation region are reduced, which causes variations in the same substrate.

  Accordingly, an object of the present invention is to provide a laser irradiation apparatus that can perform uniform and efficient irradiation using a laser beam having an attenuation region. It is another object of the present invention to provide a laser irradiation method using such a laser irradiation apparatus and to provide a method for manufacturing a semiconductor device including the laser irradiation method in a process.

  In the present invention, a plurality of laser beams are combined with each other at least at an attenuation region of each laser beam at or near the irradiated surface. By doing in this way, the laser beam which has the energy density which can fully irradiate with respect to a to-be-processed object from the several laser beam which has an attenuation | damping area | region can be formed. (FIG. 1) In addition, slits can be provided in the vicinity of the irradiation surface to block both ends of the laser beam, making the end sharp, and adjusting the length of the laser beam. If the slit width is automatically controlled, it is preferable because a laser beam having a desired length can be irradiated to a desired region.

  Furthermore, in order to perform uniform laser light irradiation on the object to be processed, the shape of the laser light on the object to be processed needs to be constant. Therefore, in the present invention, a galvano mirror for deflecting laser light, a polygon mirror, an acousto-optic deflector (AOD), an electro-optic deflector (EOD), a resonant scanner, a hologram scanner, a conical scanner, a gonio stage for fixing a stage, The fθ lens is combined and vibrated (rotated) in an interlocking manner by means for synchronizing them.

  In addition, the shape of each laser light irradiation surface has a peak at the center, and the energy density is not necessarily gradually attenuated at the end, and multiple energy peaks are formed depending on the laser mode. There is also. In any mode, the present invention can be applied as long as it has a region where the energy density of laser light is not sufficient for irradiation of the irradiated object.

  Also, the shape of the laser beam varies depending on the type of laser. For example, in the case of a solid laser, the shape of the laser beam is circular or elliptical if the rod shape is cylindrical, and the shape of the laser beam is slab type. It becomes a rectangular shape, and the present invention can be applied to such a laser beam.

  The configuration of the invention relating to the laser irradiation apparatus includes: a plurality of lasers; a unit that combines a plurality of laser beams emitted from the plurality of lasers into one laser beam on a stage; and the combined laser beam, And a means for moving the shape while keeping the shape constant on the stage.

  According to another configuration of the invention relating to the laser irradiation apparatus, a plurality of lasers, means for combining a plurality of laser beams emitted from the plurality of lasers into one laser beam on a stage, and the combined laser Means for moving the light while keeping its shape constant on the stage, and the synthesized laser light is incident on the stage at a constant angle. By setting a constant incident angle, irradiation can be performed while maintaining the shape of the laser beam on the object to be processed, and reflection from the surface of the object to be processed can be made constant, so that uniform annealing can be performed.

  Another configuration of the invention relating to the laser irradiation apparatus includes a plurality of lasers, a means for enlarging a spot of a plurality of laser beams emitted from the plurality of lasers in a longitudinal direction, and the plurality of laser beams expanded. It is characterized by comprising means for synthesizing one laser beam on the stage and means for moving the synthesized laser beam while keeping the shape constant on the stage.

  Another configuration of the invention relating to the laser irradiation apparatus includes: a plurality of lasers; a means for enlarging a spot of a plurality of laser beams emitted from the plurality of lasers in a longitudinal direction; and the plurality of enlarged laser beams Means for synthesizing the laser beam into one laser beam, and means for moving the synthesized laser beam while keeping the shape constant in the stage, and the synthesized laser beam is applied to the stage. And is incident at a certain angle. By setting a constant incident angle, irradiation can be performed while maintaining the shape of the laser beam on the object to be processed, and reflection from the surface of the object to be processed can be made constant, so that uniform annealing can be performed.

In the above structure, a solid laser, a gas laser, a metal laser, or the like can be used as the laser. Incidentally, the solid-state YAG laser as the laser, YVO ₄ laser, YLF laser, YAlO ₃ laser, a glass laser, ruby laser, alexandrite wells laser, Ti: has sapphire laser, an excimer laser, Ar laser as the gas laser, There are Kr laser, CO ₂ laser, and the like, and examples of the metal laser include helium cadmium laser, copper vapor laser, and gold vapor laser. The laser may be continuous oscillation or pulse oscillation.

  In the above configuration, it is desirable that the plurality of laser beams be converted into higher harmonics by a nonlinear optical element. For example, a YAG laser is known to emit laser light having a wavelength of 1065 nm as a fundamental wave. The absorption coefficient of the laser light with respect to the silicon film is very low, and it is technically difficult to crystallize an amorphous silicon film which is one of the semiconductor films if this is left as it is. However, this laser beam can be converted to a shorter wavelength by using a nonlinear optical element, and the second harmonic (532 nm), the third harmonic (355 nm), and the fourth harmonic (266 nm) are used as harmonics. ), Fifth harmonic (213 nm). Since these harmonics have a higher absorption coefficient than the amorphous silicon film, they can be used for crystallization of the amorphous silicon film. The harmonic laser is generally doped with Nd, Yb, Cr, etc., and this is excited to oscillate the laser.

  In the above configuration, it is preferable that the spot is enlarged in the longitudinal direction by a cylindrical lens.

  Further, the configuration of the invention relating to the laser irradiation method is to combine a plurality of laser beams into one laser beam on or near the object to be processed, and to move the object while maintaining the shape constant, The irradiation object is irradiated with light.

  According to another configuration of the invention relating to the laser irradiation method, a plurality of laser beams are emitted from a plurality of lasers, the plurality of laser beams are combined into one laser beam on the irradiated body, and the irradiated body The laser irradiation method of irradiating the irradiated body while keeping the shape constant above is characterized in that the laser light is incident on the irradiated body at a constant angle. By setting a constant incident angle, irradiation can be performed while maintaining the shape of the laser beam on the object to be processed, and reflection from the surface of the object to be processed can be made constant, so that uniform annealing can be performed.

In the above structure, a solid laser, a gas laser, a metal laser, or the like can be used as the laser. Incidentally, the solid-state YAG laser as the laser, YVO ₄ laser, YLF laser, YAlO ₃ laser, a glass laser, ruby laser, alexandrite wells laser, Ti: has sapphire laser, an excimer laser, Ar laser as the gas laser, There are Kr laser, CO ₂ laser, and the like, and examples of the metal laser include helium cadmium laser, copper vapor laser, and gold vapor laser. The laser may be continuous oscillation or pulse oscillation.

In the above configuration, it is desirable that the plurality of laser beams be converted into higher harmonics by a nonlinear optical element. The harmonic laser is generally doped with Nd, Yb, Cr, etc., and this is excited to oscillate the laser.

  In the above configuration, it is preferable that the spot is enlarged in the longitudinal direction by a cylindrical lens.

  In addition, in the structure of the invention relating to the method for manufacturing a semiconductor device, a plurality of laser beams are combined into one laser beam on or near the semiconductor film, and the one laser beam is moved in the first direction at a constant incident angle. However, the semiconductor film is irradiated, and the semiconductor film is moved in the second direction, whereby the crystallization or the crystallinity of the semiconductor film is improved.

  Another structure of the invention relating to the method for manufacturing a semiconductor device disclosed in this specification is that a plurality of laser beams are combined into one laser beam on or near a semiconductor film into which an impurity element is introduced. The impurity element is activated by irradiating the semiconductor film while moving one laser beam at a constant incident angle in the first direction and moving the semiconductor film in the second direction.

In the above structure, a solid laser, a gas laser, a metal laser, or the like can be used as the laser. Incidentally, the solid-state YAG laser as the laser, YVO ₄ laser, YLF laser, YAlO ₃ laser, a glass laser, ruby laser, alexandrite wells laser, Ti: has sapphire laser, an excimer laser, Ar laser as the gas laser, There are Kr laser, CO ₂ laser, and the like, and examples of the metal laser include helium cadmium laser, copper vapor laser, and gold vapor laser. The laser may be continuous oscillation or pulse oscillation.

  In the above configuration, it is desirable that the plurality of laser beams be converted into higher harmonics by a nonlinear optical element. The harmonic laser is generally doped with Nd, Yb, Cr, etc., and this is excited to oscillate the laser.

  In the above structure, a glass substrate, a quartz substrate, a plastic substrate, a metal substrate, a flexible substrate, or the like can be used as the substrate over which the semiconductor film is formed. Examples of the glass substrate include a substrate made of glass such as barium borosilicate glass or alumino borosilicate glass. The flexible substrate is a film-like substrate made of PET, PES, PEN, acrylic, or the like. If a semiconductor device is manufactured using the flexible substrate, weight reduction is expected. If a barrier layer such as an aluminum film (AlON, AlN, AlO, etc.), a carbon film (DLC (Diamond Like Carbon), etc.), SiN or the like is formed as a single layer or a multilayer on the surface of the flexible substrate, or the front and back surfaces It is desirable because durability is improved.

  By applying the configuration of the present invention, it is possible to form a laser beam having an excellent energy density distribution at or near the irradiated surface. Further, an optical system for forming such a laser beam is simple. When annealing is performed on the object to be processed using such laser light, uniform annealing can be performed. Furthermore, since the laser light is formed by overlapping the region including the attenuation region, the region having an energy density suitable for annealing becomes large, and annealing can be performed very efficiently. For example, when a semiconductor film is annealed with such a laser beam, a semiconductor film having uniform physical properties can be obtained. When a TFT is manufactured using such a semiconductor film, variation in electrical characteristics is reduced. Is done. Furthermore, it is possible to improve the operating characteristics and reliability of a semiconductor device manufactured using such a TFT.

By adopting the configuration of the present invention, the following basic significance can be obtained.
(A) It is possible to form a laser beam having an excellent energy density distribution at or near the irradiated surface.
(B) It is possible to uniformly anneal the irradiated object. In particular, it is suitable for crystallization of semiconductor films, improvement of crystallinity, and activation of impurity elements.
(C) The throughput can be improved.
(D) In a semiconductor device typified by an active matrix liquid crystal display device, the operating characteristics and reliability of the semiconductor device can be improved while satisfying the above advantages.

[Embodiment 1]
In the present embodiment, the relationship between the laser beam distance and the energy density in FIG. 1 will be described with reference to FIGS. 1, 2, and 7.

As shown in FIG. 1A, regions including a plurality of laser light attenuation regions are combined with each other, and uniform irradiation can be performed efficiently. As shown in FIG. 1B, the energy density suitable for annealing has an upper limit (line α) and a lower limit (line β). If the difference in energy density is within this range, uniform annealing can be performed. . However, this example shows an example in which the difference in energy density is the maximum, and in practice it is better to carry out under the condition that the difference in energy density is narrowed a little more. Here, the beam width (width at 1 / e ² ) of the laser beam whose energy density distribution is a Gaussian distribution is formed between the peak value of the laser beam energy density formed by combining the two laser beams. The difference between the average value and the peak value or the minimum value was obtained by changing the distance between the centers of the two laser beams with the average value of the minimum value being 100%. The result is shown in FIG.

  From FIG. 2, if the degree of tolerance of the difference in energy density in the irradiation of the object to be processed is known, the overlap region can be narrowed by changing the distance between the two laser beams, and a long laser beam can be formed. In addition, the distance between the two laser beams can be changed in consideration of sudden energy density fluctuations oscillated from the laser.

  FIG. 7 shows the region to be crystallized when the laser output is changed to irradiate an amorphous silicon film having a thickness of 150 nm. It can be seen from FIG. 7 that the laser output suitable for crystallization is 3.5 to 6.0 W. That is, it can be seen that uniform irradiation can be performed if the fluctuation is within this range.

  Therefore, from FIG. 2 and FIG. 7, the difference in energy density upon irradiation of the object to be processed is preferably within 10%. For this reason, it is desirable to set the distance between the centers of the two laser beams to 0.525 to 0.625.

  The laser beam formed in this manner can irradiate the object to be processed at the maximum value and the minimum value of the energy density, and a laser beam that is long in one direction can be formed.

  For example, uniform irradiation can be performed efficiently by crystallizing and activating the semiconductor film using such laser light. In addition, the electrical characteristics of a TFT manufactured using a semiconductor film formed using the present invention can be improved, and the operating characteristics and reliability of the semiconductor device can be improved.

  In the present embodiment, two laser beams are combined. However, the present invention is not limited in number as long as there are a plurality of laser beams.

[Embodiment 2]
An embodiment of the present invention will be described with reference to FIGS.

  Respective laser beams emitted from the lasers 10a to 10d are expanded in the longitudinal direction by the convex cylindrical lenses 11a to 11d. Although not shown, a beam collimator for collimating the laser light emitted from the lasers 10a to 10d between the lasers 10a to 10d and the convex cylindrical lenses 11a to 11d, or for expanding or narrowing the laser light. A beam expander may be included. Each laser beam is reflected by the galvanometer mirror 12 and reaches the substrate 13.

  In this way, the attenuation regions in the long direction can be combined with each other on the substrate 13, and the same irradiation can be performed on the target object regardless of the maximum value or the minimum value of the energy density. Laser light 17 that is long in the direction can be formed.

  Next, the movement of the laser beam 17 with respect to the substrate 13 will be described. As the galvano mirror 12 vibrates in the direction of the arrow indicated by 18, the angle of the galvano mirror 12 changes, and the position of the laser beam 17 on the substrate 13 is deflected and moved in the direction of the arrow indicated by 20. When the galvanometer mirror 12 vibrates, the laser beam 17 is adjusted so as to move from end to end of the substrate 13. At this time, even if the position of the laser beam 17 on the substrate 13 is moved by the control device that synchronizes the galvanometer mirror and the gonio stage, the optical path length from the galvanometer mirror 12 to the substrate 13 is always constant. The gonio stage 15 is adjusted so as to vibrate in the direction indicated by the arrow 19 in conjunction with the gonio stage 15. This is shown in FIG.

  4A to 4C, the incident angle of the laser beam on the galvano mirror 12 changes due to the vibration of the galvano mirror 12, but the gonio stage 15 vibrates accordingly. For this reason, the optical path length from the galvano mirror 12 to the substrate 13 can always be kept constant. This is because the laser light is excellent in coherency but has a divergence angle, so that the optical path lengths from the respective lasers to the irradiation surface are desirably equal. Further, if the optical path length is constant, the focus is also constant, and the shape of the laser light on the substrate 13 is constant, so that the irradiation to the substrate 13 can be made uniform. In addition, since the angle of the substrate 13 is changed by the gonio stage 15, it is desirable that the substrate is sucked by the suction stage 14.

  When the galvanometer mirror 12 vibrates, the laser beam 17 moves from end to end in the width of the substrate. Thereby, the part irradiated with the laser beam 17 is laser-annealed. If a pulsed laser is used as the laser, the vibration speeds of the galvanometer mirror 12 and the gonio stage 15 are adjusted so that the irradiation region of the laser light 17 is not intermittent. Then, after the laser beam 17 has moved from end to end of the width of the substrate, the substrate 13 is moved in the direction of the arrow indicated by 22 by rotating the ball screw 16, and again in the direction indicated by 20 on the substrate 13. The movement of the laser beam 17 is started. By repeating these operations, the entire surface of the substrate or a desired region can be efficiently laser-annealed. If a galvano mirror is used, the laser beam is irradiated while reciprocating on the substrate 13, but if it is desired to keep the moving direction of the laser beam constant for the convenience of the process, the galvano mirror is vibrated. After the laser beam is cut off and the galvano mirror vibrates, the laser beam may be irradiated again.

  For example, uniform irradiation can be efficiently performed by crystallizing and activating the semiconductor film using such an irradiation method. In addition, the electrical characteristics of a TFT manufactured using a semiconductor film formed using the present invention can be improved, and the operating characteristics and reliability of the semiconductor device can be improved.

  The base material of the optical system is preferably, for example, BK7 or quartz in order to obtain high transmittance. Moreover, it is preferable to use an optical system coating that provides a transmittance of 99% or more with respect to the wavelength of the laser beam to be used.

  In this embodiment, the attenuation regions in the long direction of the laser light are combined with each other. However, the attenuation regions in the short direction can be combined, and the attenuation regions in the long direction and the short direction can be combined. You can also. However, in order to perform laser annealing efficiently with the simplest configuration, it is desirable to synthesize an attenuation region in the longitudinal direction of the laser light. In addition, the composition may include an attenuation region.

  Further, since the galvanometer mirror has a short acceleration distance required for accelerating the laser beam to reach a desired speed, the acceleration time is also short. On the other hand, when the stage is used to move the laser beam at a desired speed, it takes time to accelerate until the desired speed is reached. For this reason, when the galvanometer mirror 12 is used, the scanning time is shortened and the laser beam can be efficiently irradiated.

  In the present embodiment, four lasers are used, but the number of lasers is not limited as long as the present invention is plural. Further, instead of the galvanometer mirror 12, an AOD, EOD, resonant scanner, hologram scanner, or conical scanner may be used.

  Note that this embodiment can be combined with the first embodiment.

[Embodiment 3]
In the present embodiment, an optical system using a polygon mirror 23 instead of the galvanometer mirror 12 in the second embodiment will be described with reference to FIG.

  Respective laser beams emitted from the lasers 10a to 10d are expanded in the longitudinal direction by the convex cylindrical lenses 11a to 11d. Although not shown, a beam collimator for collimating the laser light emitted from the lasers 10a to 10d between the lasers 10a to 10d and the convex cylindrical lenses 11a to 11d, or for expanding or narrowing the laser light. A beam expander may be included. Each laser beam is reflected by the polygon mirror 23 and reaches the substrate 13.

  In this way, the attenuation regions in the long direction can be combined with each other on the substrate 13, and the same irradiation can be performed on the target object regardless of the maximum value or the minimum value of the energy density. Laser light 17 that is long in the direction can be formed.

  Next, the movement of the laser beam 17 with respect to the substrate 13 will be described. The polygon mirror 23 is composed of a plurality of mirrors. When the polygon mirror 23 rotates in the direction of the arrow indicated by 24, the angle of the mirror changes, and the position of the laser beam 17 on the substrate 13 is indicated by the arrow indicated by 25. Move in the direction. While the polygon mirror rotates, the laser beam vibrates at a predetermined position, but is adjusted so that the laser beam moves from end to end of the width of the substrate. At this time, even if the position of the laser beam 17 on the substrate 13 is moved by the control device that synchronizes the polygon mirror and the gonio stage, the optical path length from the polygon mirror 23 to the substrate 13 is always constant. The gonio stage 15 is adjusted so as to vibrate in the direction indicated by the arrow 19 in conjunction with the gonio stage 15. In addition, since the angle of the substrate 13 is changed by the gonio stage 15, it is desirable that the substrate is sucked by the suction stage 14. In addition, although the laser light is excellent in coherency, it has a divergence angle, so that the optical path lengths from the respective lasers to the irradiation surface are desirably equal. In the optical system shown in FIG. 5, the optical path length becomes constant by the polygon mirror 23 and the gonio stage 15 oscillating together. That is, the focus is constant and the irradiation to the substrate 13 can be made uniform.

  When the polygon mirror 23 rotates, the laser beam 17 moves from end to end in the width of the substrate. Thereby, the part irradiated with the laser beam 17 is laser-annealed. When the laser beam 17 is pulsed light, the vibration speed of the polygon mirror 23 and the gonio stage 15 is adjusted so that the irradiation region is not intermittent. Thereafter, by rotating the ball screw 16, the substrate 13 is moved in the direction of the arrow indicated by 22, and the movement of the laser light 17 in the direction indicated by 25 is started again on the substrate 13. By repeating these operations, the entire surface of the substrate or a desired region can be efficiently laser-annealed.

  For example, uniform irradiation can be efficiently performed by crystallizing and activating the semiconductor film using such an irradiation method. In addition, the electrical characteristics of a TFT manufactured using a semiconductor film formed using the present invention can be improved, and the operating characteristics and reliability of the semiconductor device can be improved.

  The base material of the optical system is preferably, for example, BK7 or quartz in order to obtain high transmittance. Moreover, it is preferable to use an optical system coating that provides a transmittance of 99% or more with respect to the wavelength of the laser beam to be used.

  In this embodiment, the attenuation regions in the long direction of the laser light are combined with each other. However, the attenuation regions in the short direction can be combined, and the attenuation regions in the long direction and the short direction can be combined. You can also. However, in order to perform laser annealing efficiently with the simplest configuration, it is desirable to synthesize an attenuation region in the longitudinal direction of the laser light. In addition, the composition may include an attenuation region.

  In the present embodiment, four lasers are used, but the number of lasers is not limited as long as the present invention is plural. In place of the polygon mirror 23, an AOD, EOD, resonant scanner, hologram scanner, or conical scanner may be used.

  Note that this embodiment can be combined with the first embodiment.

[Embodiment 4]
In the present embodiment, an optical system using an fθ lens instead of the gonio stage in the second embodiment will be described with reference to FIG.

  Respective laser beams emitted from the lasers 10a to 10d are expanded in the longitudinal direction by the convex cylindrical lenses 11a to 11d. Although not shown, a beam collimator for collimating the laser light emitted from the lasers 10a to 10d between the lasers 10a to 10d and the convex cylindrical lenses 11a to 11d, or for expanding or narrowing the laser light. A beam expander may be included. Each laser beam is reflected by the galvanometer mirror 12 and reaches the substrate 13 via the fθ lens 26.

  In this way, the attenuation regions in the long direction can be combined with each other on the substrate 13, and the same irradiation can be performed on the target object regardless of the maximum value or the minimum value of the energy density. Laser light 17 that is long in the direction can be formed.

  Next, the movement of the laser beam 17 with respect to the substrate 13 will be described. As the galvano mirror 12 vibrates in the direction of the arrow indicated by 18, the angle of the galvano mirror 12 changes, and the position of the laser beam 17 on the substrate 13 moves in the direction of the arrow indicated by 20. When the galvanometer mirror vibrates, the laser beam 17 is adjusted so as to move from end to end of the substrate 13. At this time, the fθ lens 26 is adjusted so that the optical path length from the galvano mirror 12 to the substrate 13 is always constant even if the position of the laser beam 17 on the substrate 13 is moved. Here, the triplet is used as the fθ lens, but it may be a single lens or a doublet.

  When the galvanometer mirror 12 vibrates, the laser beam 17 moves from end to end in the width of the substrate. Thereby, the part irradiated with the laser beam 17 is laser-annealed. When the laser beam 17 is pulsed light, the vibration speed of the galvanometer mirror 12 is adjusted so that the irradiation region is not intermittent. Thereafter, by rotating the ball screw 16 and moving the stage 27 in the direction indicated by 28, the substrate 13 is also moved in the direction of the arrow indicated by 28, and the laser beam 17 is again directed in the direction indicated by 20 on the substrate 13. Start moving. By repeating these operations, the entire surface of the substrate or a desired region can be efficiently laser-annealed.

  For example, uniform irradiation can be efficiently performed by crystallizing and activating the semiconductor film using such an irradiation method. In addition, the electrical characteristics of a TFT manufactured using a semiconductor film formed using the present invention can be improved, and the operating characteristics and reliability of the semiconductor device can be improved.

  The base material of the optical system is preferably, for example, BK7 or quartz in order to obtain high transmittance. Moreover, it is preferable to use an optical system coating that provides a transmittance of 99% or more with respect to the wavelength of the laser beam to be used.

  In this embodiment, the attenuation regions in the long direction of the laser light are combined with each other. However, the attenuation regions in the short direction can be combined, and the attenuation regions in the long direction and the short direction can be combined. You can also. However, in order to perform laser annealing efficiently with the simplest configuration, it is desirable to synthesize an attenuation region in the longitudinal direction of the laser light. In addition, the composition may include an attenuation region.

  In the present embodiment, four lasers are used, but the number of lasers is not limited as long as the present invention is plural. Further, instead of the galvanometer mirror 12, an AOD, EOD, resonant scanner, hologram scanner, or conical scanner may be used.

  Note that this embodiment can be combined with the first and third embodiments.

  In this embodiment, a method for manufacturing an active matrix substrate will be described with reference to FIGS. In this specification, a substrate in which a pixel portion having a CMOS circuit, a driver circuit, a pixel TFT, and a storage capacitor is formed over the same substrate is referred to as an active matrix substrate for convenience.

  First, in this embodiment, a substrate 400 made of glass such as barium borosilicate glass or alumino borosilicate glass is used. Note that the substrate 400 may be a quartz substrate, a silicon substrate, a metal substrate, or a stainless substrate on which an insulating film is formed. Further, a plastic substrate having heat resistance that can withstand the processing temperature of this embodiment may be used, or a flexible substrate may be used. In the present invention, a linear beam having the same energy distribution can be easily formed, so that a large area substrate can be efficiently irradiated with a plurality of linear beams.

  Next, a base film 401 made of an insulating film such as a silicon oxide film, a silicon nitride film, or a silicon oxynitride film is formed over the substrate 400 by a known means. Although a two-layer structure is used as the base film 401 in this embodiment, a single-layer film of the insulating film or a structure in which two or more layers are stacked may be used.

  Next, a semiconductor film is formed over the base film. The semiconductor film is formed with a thickness of 25 to 200 nm (preferably 30 to 150 nm) by a known means (sputtering method, LPCVD method, plasma CVD method, etc.), and is crystallized by a laser crystallization method. In the laser crystallization method, any one of Embodiments 1 to 4 or any combination of these embodiments is used to irradiate a semiconductor film with laser light. The laser used is preferably a continuous wave or pulsed solid laser, a gas laser, or a metal laser. Of course, not only the laser crystallization method but also other known crystallization methods (thermal crystallization method using an RTA or furnace annealing furnace, thermal crystallization method using a metal element that promotes crystallization, etc.) You may go. Examples of the semiconductor film include an amorphous semiconductor film, a microcrystalline semiconductor film, a crystalline semiconductor film, and the like, and a compound semiconductor film having an amorphous structure such as an amorphous silicon germanium film or an amorphous silicon carbide film. May be applied.

In this embodiment, a plasma CVD method is used as a semiconductor film, an amorphous silicon film of 50 nm is formed, and a thermal crystallization method and a laser crystal using a metal element that promotes crystallization in the amorphous silicon film. Perform the chemical method. Alternatively, without introducing a metal element into the amorphous silicon film, the hydrogen concentration in the amorphous silicon film is released to 1 × 10 ²⁰ atoms / cm ³ or less by heating at 500 ° C. for 1 hour in a nitrogen atmosphere. Laser crystallization may be performed. This is because the film is destroyed when the amorphous silicon film containing a large amount of hydrogen is irradiated with laser light. Nickel is used as the metal element and is introduced onto the amorphous silicon film by a solution coating method, and then a heat treatment is performed at 550 ° C. for 4 hours to obtain a first crystalline silicon film. Then, laser light emitted from a continuous wave YVO ₄ laser with an output of 10 W is converted into a second harmonic by a nonlinear optical element, and then a second crystalline silicon film is obtained according to the first to fourth embodiments. The crystallinity is improved by irradiating the first crystalline silicon film with the laser beam to form the second crystalline silicon film. At this time, the energy density of approximately 0.01 to 100 MW / cm ² (preferably 0.1 to 10 MW / cm ²⁾ is required. Then, irradiation is performed by moving the stage relative to the laser light at a speed of about 0.5 to 2000 cm / s to form a crystalline silicon film. When a pulsed laser is used, the laser energy density is preferably 100 to 150 mJ / cm ² (typically 200 to 800 mJ / cm ² ). At this time, the laser beams may be overlapped by 50 to 98%.

Needless to say, a TFT can be manufactured using the first crystalline silicon film, but the second crystalline silicon film is preferable because the electrical characteristics of the TFT are improved because the crystallinity is improved. For example, when a TFT is manufactured using the second crystalline silicon film, the mobility is as high as about 500 to 600 cm ² / Vs.

  Semiconductor layers 402 to 406 are formed by patterning the crystalline semiconductor film thus obtained using a photolithography method.

  Further, after forming the semiconductor layers 402 to 406, a small amount of impurity element (boron or phosphorus) may be doped in order to control the threshold value of the TFT.

  Next, a gate insulating film 407 covering the semiconductor layers 402 to 406 is formed. The gate insulating film 407 is formed of an insulating film containing silicon with a thickness of 40 to 150 nm by plasma CVD or sputtering. In this embodiment, a silicon oxynitride film is formed with a thickness of 110 nm by plasma CVD. Of course, the gate insulating film is not limited to the silicon oxynitride film, and another insulating film may be used as a single layer or a laminated structure.

When a silicon oxide film is used, TEOS (Tetraethyl Orthosilicate) and O ₂ are mixed by a plasma CVD method to a reaction pressure of 40 Pa, a substrate temperature of 300 to 400 ° C., and a high frequency (13.56 MHz) power density of 0. It can be formed by discharging at 5 to 0.8 W / cm ² . The silicon oxide film thus manufactured can obtain good characteristics as a gate insulating film by thermal annealing at 400 to 500 ° C. thereafter.

Next, a first conductive film 408 with a thickness of 20 to 100 nm and a second conductive film 409 with a thickness of 100 to 400 nm are stacked over the gate insulating film 407. In this embodiment, a first conductive film 408 made of a TaN film with a thickness of 30 nm and a second conductive film 409 made of a W film with a thickness of 370 nm are stacked. The TaN film is formed by sputtering, and is sputtered in a nitrogen-containing atmosphere using a Ta target. The W film was formed by sputtering using a W target. In addition, it can be formed by a thermal CVD method using tungsten hexafluoride (WF ₆ ). In any case, in order to use as a gate electrode, it is necessary to reduce the resistance, and the resistivity of the W film is desirably 20 μΩcm or less.

  In this embodiment, the first conductive film 408 is TaN and the second conductive film 409 is W. However, there is no particular limitation, and all are Ta, W, Ti, Mo, Al, Cu, Cr, Nd. You may form with the element selected from these, or the alloy material or compound material which has the said element as a main component. Alternatively, a semiconductor film typified by a polycrystalline silicon film doped with an impurity element such as phosphorus may be used. Further, an AgPdCu alloy may be used.

Next, resist masks 410 to 415 are formed by photolithography, and a first etching process is performed to form electrodes and wirings. The first etching process is performed under the first and second etching conditions. (FIG. 9 (B)) In this example, ICP (Inductively Coupled Plasma) etching method is used as the first etching condition, and CF ₄ , Cl ₂ and O ₂ are used as etching gases. Each gas flow ratio is 25:25:10 (sccm), 500 W of RF (13.56 MHz) power is applied to the coil-type electrode at a pressure of 1 Pa, plasma is generated, and etching is performed. 150 W RF (13.56 MHz) power is also applied to the substrate side (sample stage), and a substantially negative self-bias voltage is applied. The W film is etched under this first etching condition so that the end portion of the first conductive layer is tapered.

Thereafter, the masks 410 to 415 made of resist are changed to the second etching conditions without being removed, CF ₄ and Cl ₂ are used as etching gases, and the respective gas flow ratios are set to 30:30 (sccm). Etching is performed for about 30 seconds by applying 500 W RF (13.56 MHz) power to the coil-type electrode at a pressure of 1 Pa to generate plasma. 20 W of RF (13.56 MHz) power is also applied to the substrate side (sample stage), and a substantially negative self-bias voltage is applied. Under the second etching condition in which CF ₄ and Cl ₂ are mixed, the W film and the TaN film are etched to the same extent. Note that in order to perform etching without leaving a residue on the gate insulating film, it is preferable to increase the etching time at a rate of about 10 to 20%.

  In the first etching process, the shape of the mask made of resist is made suitable, and the end portions of the first conductive layer and the second conductive layer are tapered due to the effect of the bias voltage applied to the substrate side. It becomes. The angle of this taper portion is 15 to 45 °. Thus, the first shape conductive layers 417 to 422 (the first conductive layers 417 a to 422 a and the second conductive layers 417 b to 422 b) composed of the first conductive layer and the second conductive layer by the first etching treatment. Form. Reference numeral 416 denotes a gate insulating film, and a region not covered with the first shape conductive layers 417 to 422 is etched and thinned by about 20 to 50 nm.

Next, a second etching process is performed without removing the resist mask. Here, CF ₄ , Cl _2, and O ₂ are used as etching gases, and the W film is selectively etched. At this time, second conductive layers 428b to 433b are formed by a second etching process. On the other hand, the first conductive layers 417a to 422a are hardly etched, and the second shape conductive layers 428 to 433 are formed.

Then, a first doping process is performed without removing the resist mask, and an impurity element imparting n-type conductivity is added to the semiconductor layer at a low concentration. The doping process may be performed by ion doping or ion implantation. The conditions of the ion doping method are a dose amount of 1 × 10 ^{13 to} 5 × 10 ¹⁴ atoms / cm ² and an acceleration voltage of 40 to 80 kV. In this embodiment, the dose is set to 1.5 × 10 ¹³ atoms / cm ² and the acceleration voltage is set to 60 kV. As an impurity element imparting n-type, an element belonging to Group 15, typically phosphorus (P) or arsenic (As), is used here, but phosphorus (P) is used. In this case, the conductive layers 428 to 433 serve as a mask for the impurity element imparting n-type, and the impurity regions 423 to 427 are formed in a self-aligning manner. An impurity element imparting n-type conductivity is added to the impurity regions 423 to 427 in a concentration range of 1 × 10 ¹⁸ to 1 × 10 ²⁰ atoms / cm ³ .

After removing the resist mask, new resist masks 434a to 434c are formed, and the second doping process is performed at an acceleration voltage higher than that of the first doping process. The conditions of the ion doping method are a dose amount of 1 × 10 ¹³ to 1 × 10 ¹⁵ atoms / cm ² and an acceleration voltage of 60 to 120 kV. In the doping treatment, the second conductive layers 428b to 432b are used as masks against the impurity element, and doping is performed so that the impurity element is added to the semiconductor layer below the tapered portion of the first conductive layer. Subsequently, the third doping process is performed by lowering the acceleration voltage than the second doping process to obtain the state of FIG. The conditions of the ion doping method are a dose of 1 × 10 ¹⁵ to 1 × 10 ¹⁷ atoms / cm ² and an acceleration voltage of 50 to 100 kV. By the second doping process and the third doping process, the low-concentration impurity regions 436, 442, and 448 overlapping with the first conductive layer are n-type in a concentration range of 1 × 10 ^{18 to} 5 × 10 ¹⁹ atoms / cm ^3. An impurity element imparting n-type conductivity is added to the high-concentration impurity regions 435, 438, 441, 444, and 447 in the concentration range of 1 × 10 ^{19 to} 5 × 10 ²¹ atoms / cm ^3. Is done.

  Needless to say, by setting the acceleration voltage to be appropriate, the second and third doping processes can be performed in a single doping process to form the low-concentration impurity region and the high-concentration impurity region.

Next, after removing the resist mask, new resist masks 450a to 450c are formed, and a fourth doping process is performed. By this fourth doping process, impurity regions 453 to 456, 459, and 460 in which an impurity element imparting a conductivity type opposite to the one conductivity type is added to the semiconductor layer that becomes the active layer of the p-channel TFT are formed. To do. The second conductive layers 428a to 432a are used as masks against the impurity element, and an impurity element imparting p-type is added to form an impurity region in a self-aligning manner. In this embodiment, the impurity regions 453 to 456, 459, and 460 are formed by an ion doping method using diborane (B ₂ H ₆ ). (FIG. 10B) In the fourth doping process, the semiconductor layer forming the n-channel TFT is covered with masks 450a to 450c made of resist. By the first to third doping treatments, phosphorus is added to the impurity regions 438 and 439 at different concentrations, and the concentration of the impurity element imparting p-type is set to 1 × 10 ^{19 to} 5 in any of the regions. By performing the doping treatment so as to be × 10 ²¹ atoms / cm ³ , no problem arises because it functions as the source region and drain region of the p-channel TFT.

  Through the above steps, impurity regions are formed in the respective semiconductor layers.

  Next, the resist masks 450 a to 450 c are removed, and a first interlayer insulating film 461 is formed. The first interlayer insulating film 461 is formed of an insulating film containing silicon with a thickness of 100 to 200 nm using a plasma CVD method or a sputtering method. In this embodiment, a silicon oxynitride film having a thickness of 150 nm is formed by a plasma CVD method. Needless to say, the first interlayer insulating film 461 is not limited to the silicon oxynitride film, and another insulating film containing silicon may be used as a single layer or a stacked structure.

Next, laser light irradiation is performed to recover the crystallinity of the semiconductor layers and to activate the impurity elements added to the respective semiconductor layers. In the laser activation, the semiconductor film is irradiated with laser light by any one of Embodiments 1 to 4 or any combination of these embodiments. The laser used is preferably a continuous wave or pulsed solid laser, a gas laser, or a metal laser. At this time, if using a continuous wave laser, the energy density of the laser beam is about 0.01 to 100 MW / cm ² (preferably 0.01~10MW / cm ²⁾ is required, with respect to the laser beam The substrate is relatively moved at a speed of 0.5 to 2000 cm / s. If a pulsed laser is used, the laser energy density is preferably 50 to 900 mJ / cm ² (typically 50 to 500 mJ / cm ² ). At this time, the laser beams may be overlapped by 50 to 98%. In addition to the laser annealing method described above, a thermal annealing method, a rapid thermal annealing method (RTA method), or the like can be applied. Alternatively, a conventional laser annealing method may be used.

  In addition, activation may be performed before forming the first interlayer insulating film. However, when the wiring material used is weak against heat, it is activated after an interlayer insulating film (insulating film containing silicon as a main component, for example, a silicon nitride film) is formed to protect the wiring as in this embodiment. It is preferable to perform the conversion treatment.

  Then, hydrogenation can be performed by heat treatment (heat treatment at 300 to 550 ° C. for 1 to 12 hours). This step is a step of terminating dangling bonds in the semiconductor layer with hydrogen contained in the first interlayer insulating film 461. The semiconductor layer can be hydrogenated regardless of the presence of the first interlayer insulating film. As other means for hydrogenation, plasma hydrogenation (using hydrogen excited by plasma) or heat treatment at 300 to 450 ° C. for 1 to 12 hours in an atmosphere containing 3 to 100% hydrogen may be performed. .

  Next, a second interlayer insulating film 462 made of an inorganic insulating film material or an organic insulating material is formed over the first interlayer insulating film 461. In this embodiment, an acrylic resin film having a thickness of 1.6 μm is formed, but a film having a viscosity of 10 to 1000 cp, preferably 40 to 200 cp, and having a surface with unevenness is used.

  In this embodiment, in order to prevent specular reflection, the surface of the pixel electrode is formed with the unevenness by forming the second interlayer insulating film having the unevenness on the surface. In addition, a convex portion may be formed in a region below the pixel electrode in order to make the surface of the pixel electrode uneven to achieve light scattering. In that case, since the convex portion can be formed using the same photomask as that of the TFT, it can be formed without increasing the number of steps. In addition, this convex part should just be suitably provided on the board | substrate of pixel part area | regions other than wiring and a TFT part. Thus, irregularities are formed on the surface of the pixel electrode along the irregularities formed on the surface of the insulating film covering the convex portions.

  Alternatively, a film whose surface is planarized may be used as the second interlayer insulating film 462. In that case, after forming the pixel electrode, adding a step such as a known sandblasting method or etching method to make the surface uneven, prevent specular reflection, and increase the whiteness by scattering the reflected light Is preferred.

  In the driver circuit 506, wirings 464 to 468 that are electrically connected to the impurity regions are formed. Note that these wirings are formed by patterning a laminated film of a Ti film having a thickness of 50 nm and an alloy film (alloy film of Al and Ti) having a thickness of 500 nm. Of course, not only a two-layer structure but also a single-layer structure or a laminated structure of three or more layers may be used. Further, the wiring material is not limited to Al and Ti. For example, a wiring may be formed by patterning a laminated film in which Al or Cu is formed on a TaN film and a Ti film is further formed. (Fig. 11)

  In the pixel portion 507, a pixel electrode 470, a gate wiring 469, and a connection electrode 468 are formed. With this connection electrode 468, the source wiring (stacked layer of 443a and 443b) is electrically connected to the pixel TFT. In addition, the gate wiring 469 is electrically connected to the gate electrode of the pixel TFT. In addition, the pixel electrode 470 is electrically connected to the drain region 442 of the pixel TFT and further electrically connected to the semiconductor layer 458 functioning as one electrode forming a storage capacitor. Further, as the pixel electrode 471, it is desirable to use a highly reflective material such as a film containing Al or Ag as a main component or a laminated film thereof.

  As described above, a CMOS circuit including an n-channel TFT 501 and a p-channel TFT 502, a driver circuit 506 having an n-channel TFT 503, and a pixel portion 507 having a pixel TFT 504 and a storage capacitor 505 are formed over the same substrate. can do. Thus, the active matrix substrate is completed.

  The n-channel TFT 501 of the driver circuit 506 includes a channel formation region 437, a low-concentration impurity region 436 (GOLD region) that overlaps with the first conductive layer 428a that forms part of the gate electrode, and a high-concentration function as a source region or a drain region. An impurity region 452 and an impurity region 451 into which an impurity element imparting n-type conductivity and an impurity element imparting p-type conductivity are introduced are provided. The p-channel TFT 502, which is connected to the n-channel TFT 501 and the electrode 466 to form a CMOS circuit, includes a channel formation region 440, a high-concentration impurity region 454 that functions as a source region or a drain region, and an impurity element that imparts n-type conductivity And an impurity region 453 into which an impurity element imparting p-type conductivity is introduced. In the n-channel TFT 503, a channel formation region 443, a low concentration impurity region 442 (GOLD region) overlapping with the first conductive layer 430a which forms part of the gate electrode, and a high concentration impurity functioning as a source region or a drain region The region 456 includes an impurity region 455 into which an impurity element imparting n-type conductivity and an impurity element imparting p-type conductivity are introduced.

  The pixel TFT 504 in the pixel portion is provided with a channel formation region 446, a low concentration impurity region 445 (LDD region) formed outside the gate electrode, a high concentration impurity region 458 functioning as a source region or a drain region, and an n-type. An impurity region 457 into which an impurity element and an impurity element imparting p-type conductivity are introduced is provided. In addition, an impurity element imparting n-type conductivity and an impurity element imparting p-type conductivity are added to the semiconductor layer functioning as one electrode of the storage capacitor 505. The storage capacitor 505 is formed of an electrode (stack of 432a and 432b) and a semiconductor layer using the insulating film 416 as a dielectric.

  In the pixel structure of this embodiment, the end portions of the pixel electrodes are arranged and formed so as to overlap the source wiring so that the gap between the pixel electrodes is shielded from light without using a black matrix.

  FIG. 12 shows a top view of a pixel portion of an active matrix substrate manufactured in this embodiment. In addition, the same code | symbol is used for the part corresponding to FIGS. 9-12. A chain line A-A ′ in FIG. 11 corresponds to a cross-sectional view taken along the chain line A-A ′ in FIG. 12. Further, a chain line B-B ′ in FIG. 11 corresponds to a cross-sectional view taken along the chain line B-B ′ in FIG. 12.

  The active matrix substrate manufactured as described above is manufactured using a semiconductor film uniformly irradiated with a laser beam that can irradiate the same object to be processed at both the maximum value and the minimum value of the energy density. The TFT has sufficient electrical characteristics. A semiconductor device with sufficient operating characteristics and reliability can be manufactured using such a TFT.

  In this embodiment, a process for manufacturing a reflective liquid crystal display device from the active matrix substrate manufactured in Embodiment 1 will be described below. FIG. 13 is used for the description.

  First, after obtaining the active matrix substrate in the state of FIG. 11 according to Example 1, an alignment film 567 is formed on at least the pixel electrode 470 on the active matrix substrate of FIG. In this embodiment, before forming the alignment film 567, an organic resin film such as an acrylic resin film is patterned to form columnar spacers 572 for maintaining a substrate interval at a desired position. Further, instead of the columnar spacers, spherical spacers may be scattered over the entire surface of the substrate.

  Next, a counter substrate 569 is prepared. Next, colored layers 570 and 571 and a planarization film 573 are formed over the counter substrate 569. The red colored layer 570 and the blue colored layer 571 are overlapped to form a light shielding portion. Further, the light shielding portion may be formed by partially overlapping the red colored layer and the green colored layer.

  In this embodiment, the substrate shown in Embodiment 1 is used. Therefore, in FIG. 12 showing a top view of the pixel portion of Embodiment 1, at least the gap between the gate wiring 469 and the pixel electrode 470, the gap between the gate wiring 469 and the connection electrode 468, and the gap between the connection electrode 468 and the pixel electrode 470 are shown. It is necessary to shield the light. In this example, the respective colored layers were arranged so that the light-shielding portions formed by the lamination of the colored layers overlapped at the positions where light shielding should be performed, and the counter substrate was bonded.

  As described above, the number of steps can be reduced by shielding the gap between the pixels with the light shielding portion formed by the lamination of the colored layers without forming a light shielding layer such as a black mask.

  Next, a counter electrode 576 made of a transparent conductive film was formed over the planarization film 573 in at least the pixel portion, an alignment film 574 was formed over the entire surface of the counter substrate, and a rubbing process was performed.

  Then, the active matrix substrate on which the pixel portion and the driver circuit are formed and the counter substrate are attached to each other with a sealant 568. A filler is mixed in the sealing material 568, and two substrates are bonded to each other with a uniform interval by the filler and the columnar spacer. Thereafter, a liquid crystal material 575 is injected between both substrates and completely sealed with a sealant (not shown). A known liquid crystal material may be used for the liquid crystal material 575. In this way, the reflection type liquid crystal display device shown in FIG. 13 is completed. If necessary, the active matrix substrate or the counter substrate is divided into a desired shape. Further, a polarizing plate (not shown) was attached only to the counter substrate. And FPC was affixed using the well-known technique.

  The liquid crystal display device manufactured as described above is manufactured using a semiconductor film uniformly irradiated with a laser beam that can irradiate the same object to be processed at both the maximum value and the minimum value of the energy density. The liquid crystal display device can have sufficient operating characteristics and reliability. And such a liquid crystal display device can be used as a display part of various electronic devices.

  In this embodiment, an example in which a light-emitting device is manufactured using the method for manufacturing a TFT when manufacturing an active matrix substrate shown in Embodiment 1 will be described. In this specification, the light emitting device is a general term for a display panel in which a light emitting element formed on a substrate is sealed between the substrate and a cover material, and a display module including a TFT in the display panel. is there. Note that the light-emitting element includes a layer (light-emitting layer) containing an organic compound from which luminescence (Electro Luminescence) generated by applying an electric field is obtained, an anode layer, and a cathode layer. In addition, luminescence in an organic compound includes light emission (fluorescence) when returning from a singlet excited state to a ground state and light emission (phosphorescence) when returning from a triplet excited state to a ground state, one of these, Or both luminescence is included.

  In the present specification, all layers formed between the anode and the cathode in the light emitting element are defined as organic light emitting layers. Specifically, the organic light emitting layer includes a light emitting layer, a hole injection layer, an electron injection layer, a hole transport layer, an electron transport layer, and the like. Basically, a light emitting element has a structure in which an anode layer, a light emitting layer, and a cathode layer are sequentially laminated. In addition to this structure, an anode layer, a hole injection layer, a light emitting layer, a cathode layer, and an anode layer , A hole injection layer, a light emitting layer, an electron transport layer, a cathode layer and the like may be laminated in this order.

  FIG. 14 is a cross-sectional view of the light emitting device of this example. In FIG. 14, a switching TFT 603 provided over a substrate 700 is formed using the n-channel TFT 503 in FIG. Therefore, the description of the n-channel TFT 503 may be referred to for the description of the structure.

  Note that although a double gate structure in which two channel formation regions are formed is used in this embodiment, a single gate structure in which one channel formation region is formed or a triple gate structure in which three channel formation regions are formed may be used.

  A driver circuit provided over the substrate 700 is formed using the CMOS circuit of FIG. Therefore, for the description of the structure, the description of the n-channel TFT 501 and the p-channel TFT 502 may be referred to. In this embodiment, a single gate structure is used, but a double gate structure or a triple gate structure may be used.

  Further, the wirings 701 and 703 function as source wirings of the CMOS circuit, and the wiring 702 functions as a drain wiring. The wiring 704 functions as a wiring that electrically connects the source wiring 708 and the source region of the switching TFT, and the wiring 705 functions as a wiring that electrically connects the drain wiring 709 and the drain region of the switching TFT.

  Note that the current control TFT 604 is formed using the p-channel TFT 502 of FIG. Accordingly, the description of the p-channel TFT 502 may be referred to for the description of the structure. In this embodiment, a single gate structure is used, but a double gate structure or a triple gate structure may be used.

  A wiring 706 is a source wiring (corresponding to a current supply line) of the current control TFT, and 707 is an electrode that is electrically connected to the pixel electrode 711 by being overlaid on the pixel electrode 711 of the current control TFT.

  Reference numeral 711 denotes a pixel electrode (anode of the light emitting element) made of a transparent conductive film. As the transparent conductive film, a compound of indium oxide and tin oxide, a compound of indium oxide and zinc oxide, zinc oxide, tin oxide, or indium oxide can be used. Moreover, you may use what added the gallium to the said transparent conductive film. The pixel electrode 711 is formed on the flat interlayer insulating film 710 before forming the wiring. In this embodiment, it is very important to flatten the step due to the TFT using the flattening film 710 made of resin. Since the light emitting layer formed later is very thin, the presence of a step may cause a light emission failure. Therefore, it is desirable to planarize the pixel electrode before forming it so that the light emitting layer can be formed as flat as possible.

  After the wirings 701 to 707 are formed, a bank 712 is formed as shown in FIG. The bank 712 may be formed by patterning an insulating film or organic resin film containing silicon of 100 to 400 nm.

Note that since the bank 712 is an insulating film, attention must be paid to electrostatic breakdown of elements during film formation. In this embodiment, carbon particles or metal particles are added to the insulating film that is the material of the bank 712 to reduce the resistivity and suppress the generation of static electricity. At this time, the addition amount of carbon particles or metal particles may be adjusted so that the resistivity is 1 × 10 ⁶ to 1 × 10 ¹² Ωm (preferably 1 × 10 ⁸ to 1 × 10 ¹⁰ Ωm).

A light emitting layer 713 is formed on the pixel electrode 711. Although only one pixel is shown in FIG. 14, in this embodiment, light emitting layers corresponding to each color of R (red), G (green), and B (blue) are separately formed. In this embodiment, a low molecular weight organic light emitting material is formed by a vapor deposition method. Specifically, a laminated structure in which a copper phthalocyanine (CuPc) film having a thickness of 20 nm is provided as a hole injection layer and a tris-8-quinolinolato aluminum complex (Alq ₃ ) film having a thickness of 70 nm is provided thereon as a light emitting layer. It is said. The emission color can be controlled by adding a fluorescent dye such as quinacridone, perylene, or DCM1 to Alq ₃ .

  However, the above example is an example of an organic light emitting material that can be used as a light emitting layer, and it is not absolutely necessary to limit to this. A light emitting layer (a layer for emitting light and moving carriers therefor) may be formed by freely combining a light emitting layer, a charge transport layer, or a charge injection layer. For example, in this embodiment, an example in which a low molecular weight organic light emitting material is used as the light emitting layer is shown, but a medium molecular weight organic light emitting material or a high molecular weight organic light emitting material may be used. Note that in this specification, an organic light-emitting material that does not have sublimation and has 20 or less molecules or a chain molecule length of 10 μm or less is referred to as a medium molecular organic light-emitting material. As an example of using a polymer organic light emitting material, a 20 nm polythiophene (PEDOT) film is provided by a spin coating method as a hole injection layer, and a paraphenylene vinylene (PPV) film of about 100 nm is provided thereon as a light emitting layer. Alternatively, a laminated structure may be used. If a PPV π-conjugated polymer is used, the emission wavelength can be selected from red to blue. It is also possible to use an inorganic material such as silicon carbide for the charge transport layer or the charge injection layer. Known materials can be used for these organic light emitting materials and inorganic materials.

  Next, a cathode 714 made of a conductive film is provided on the light emitting layer 713. In this embodiment, an alloy film of aluminum and lithium is used as the conductive film. Of course, a known MgAg film (magnesium and silver alloy film) may be used. As the cathode material, a conductive film made of an element belonging to Group 1 or Group 2 of the periodic table or a conductive film added with these elements may be used.

  When the cathode 714 is formed, the light emitting element 715 is completed. Note that the light-emitting element 715 here refers to a diode formed of a pixel electrode (anode) 711, a light-emitting layer 713, and a cathode 714.

  It is effective to provide a passivation film 716 so as to completely cover the light emitting element 715. As the passivation film 716, an insulating film including a carbon film, a silicon nitride film, or a silicon nitride oxide film is used, and the insulating film is used as a single layer or a combination thereof.

At this time, it is preferable to use a film with good coverage as the passivation film, and it is effective to use a carbon film, particularly a DLC film. Since the DLC film can be formed in a temperature range from room temperature to 100 ° C., it can be easily formed over the light-emitting layer 713 having low heat resistance. In addition, the DLC film has a high blocking effect against oxygen and can suppress oxidation of the light-emitting layer 713. Therefore, the problem that the light emitting layer 713 is oxidized during the subsequent sealing process can be prevented.

  Further, a sealing material 717 is provided over the passivation film 716 and a cover material 718 is attached thereto. As the sealing material 717, an ultraviolet curable resin may be used, and it is effective to provide a substance having a hygroscopic effect or a substance having an antioxidant effect inside. In this embodiment, the cover member 718 is formed by forming a carbon film (preferably a DLC film) on both surfaces of a glass substrate, a quartz substrate, a plastic substrate (including a plastic film), or a flexible substrate. In addition to the carbon film, an aluminum film (AlON, AlN, AlO, etc.), SiN, or the like can be used.

  Thus, a light emitting device having a structure as shown in FIG. 14 is completed. Note that it is effective to continuously process the steps from the formation of the bank 712 to the formation of the passivation film 716 using a multi-chamber type (or in-line type) film formation apparatus without releasing to the atmosphere. . Further, it is possible to continuously process the process up to the step of bonding the cover material 718 without releasing to the atmosphere.

  Thus, n-channel TFTs 601 and 602, a switching TFT (n-channel TFT) 603 and a current control TFT (n-channel TFT) 604 are formed on the substrate 700.

  Furthermore, as described with reference to FIGS. 14A and 14B, an n-channel TFT which is resistant to deterioration due to the hot carrier effect can be formed by providing an impurity region overlapping with the gate electrode through an insulating film. Therefore, a highly reliable light emitting device can be realized.

  Further, in this embodiment, only the configuration of the pixel portion and the drive circuit is shown. However, according to the manufacturing process of this embodiment, other logic circuits such as a signal dividing circuit, a D / A converter, an operational amplifier, and a γ correction circuit are provided. Can be formed on the same insulator, and a memory and a microprocessor can also be formed.

  The light-emitting device manufactured as described above is manufactured using a semiconductor film that is uniformly irradiated with a laser beam that can irradiate the same object to be processed at both the maximum value and the minimum value of the energy density. The TFT can have sufficient operating characteristics and reliability of the light emitting device. And such a light-emitting device can be used as a display part of various electronic devices.

  By applying the present invention, various semiconductor devices (active matrix liquid crystal display device, active matrix light emitting device, active matrix EC display device) can be manufactured. That is, the present invention can be applied to various electronic devices in which these electro-optical devices are incorporated in a display unit.

  Such electronic devices include video cameras, digital cameras, projectors, head-mounted displays (goggles type displays), car navigation systems, car stereos, personal computers, personal digital assistants (mobile computers, mobile phones, electronic books, etc.), etc. Can be mentioned. Examples thereof are shown in FIGS. 15, 16 and 17.

  FIG. 15A shows a personal computer, which includes a main body 3001, an image input portion 3002, a display portion 3003, a keyboard 3004, and the like. By applying the semiconductor device manufactured according to the present invention to the display portion 3003, the personal computer of the present invention is completed.

  FIG. 15B illustrates a video camera, which includes a main body 3101, a display portion 3102, an audio input portion 3103, operation switches 3104, a battery 3105, an image receiving portion 3106, and the like. By applying the semiconductor device manufactured according to the present invention to the display portion 3102, the video camera of the present invention is completed.

  FIG. 15C illustrates a mobile computer, which includes a main body 3201, a camera portion 3202, an image receiving portion 3203, operation switches 3204, a display portion 3205, and the like. By applying the semiconductor device manufactured according to the present invention to the display portion 3205, the mobile computer of the present invention is completed.

FIG. 15D illustrates a goggle-type display, which includes a main body 3301, a display portion 3302, an arm portion 3303, and the like. The display portion 3302 uses a flexible substrate as a substrate, and the goggle type display is manufactured by curving the display portion 3302.
It also realizes a lightweight and thin goggle type display. By applying the semiconductor device manufactured according to the present invention to the display portion 3302, the goggle type display of the present invention is completed.

FIG. 15E shows a player using a recording medium (hereinafter referred to as a recording medium) on which a program is recorded, and includes a main body 3401, a display portion 3402, a speaker portion 3403, a recording medium 3404, an operation switch 3405, and the like. The player uses DVD (Dig it al Versatile Disc) as a recording medium, a CD and the like, it is possible to perform music appreciation, film appreciation, games and the Internet. By applying the semiconductor device manufactured according to the present invention to the display portion 3402, the recording medium of the present invention is completed.

  FIG. 15F illustrates a digital camera, which includes a main body 3501, a display portion 3502, an eyepiece portion 3503, an operation switch 3504, an image receiving portion (not shown), and the like. By applying the semiconductor device manufactured according to the present invention to the display portion 3502, the digital camera of the present invention is completed.

  FIG. 16A illustrates a front type projector, which includes a projection device 3601, a screen 3602, and the like. The front type projector of the present invention is completed by applying the semiconductor device manufactured according to the present invention to the liquid crystal display device 3808 constituting a part of the projection device 3601 and other driving circuits.

  FIG. 16B shows a rear projector, which includes a main body 3701, a projection device 3702, a mirror 3703, a screen 3704, and the like. By applying the semiconductor device manufactured according to the present invention to the liquid crystal display device 3808 constituting a part of the projection device 3702 and other driving circuits, the rear projector of the present invention is completed.

  Note that FIG. 16C is a diagram illustrating an example of the structure of the projection devices 3601 and 3702 in FIGS. 16A and 16B. The projection devices 3601 and 3702 include a light source optical system 3801, mirrors 3802 and 3804 to 3806, a dichroic mirror 3803, a prism 3807, a liquid crystal display device 3808, a phase difference plate 3809, and a projection optical system 3810. The projection optical system 3810 is composed of an optical system including a projection lens. Although the present embodiment shows an example of a three-plate type, it is not particularly limited, and for example, a single-plate type may be used. Further, the practitioner may appropriately provide an optical system such as an optical lens, a film having a polarization function, a film for adjusting a phase difference, an IR film, or the like in the optical path indicated by an arrow in FIG. Good.

  FIG. 16D illustrates an example of the structure of the light source optical system 3801 in FIG. In this embodiment, the light source optical system 3801 includes a reflector 3811, a light source 3812, lens arrays 3813 and 3814, a polarization conversion element 3815, and a condenser lens 3816. Note that the light source optical system illustrated in FIG. 16D is an example and is not particularly limited. For example, the practitioner may appropriately provide an optical system such as an optical lens, a film having a polarization function, a film for adjusting a phase difference, or an IR film in the light source optical system.

  However, the projector shown in FIG. 16 shows a case where a transmissive electro-optical device is used, and an application example in a reflective electro-optical device and a light-emitting device is not shown.

  FIG. 17A illustrates a mobile phone, which includes a main body 3901, an audio output portion 3902, an audio input portion 3903, a display portion 3904, operation switches 3905, an antenna 3906, and the like. By applying the semiconductor device manufactured according to the present invention to the display portion 3904, the cellular phone of the present invention is completed.

  FIG. 17B illustrates a portable book (electronic book), which includes a main body 4001, display portions 4002 and 4003, a storage medium 4004, operation switches 4005, an antenna 4006, and the like. By applying the semiconductor device manufactured according to the present invention to the display portions 4002 and 4003, the portable book of the present invention is completed.

  FIG. 17C illustrates a display, which includes a main body 4101, a support base 4102, a display portion 4103, and the like. The display portion 4103 is manufactured using a flexible substrate, and a lightweight and thin display can be realized. In addition, the display portion 4103 can be curved. By applying the semiconductor device manufactured according to the present invention to the display portion 4103, the display of the present invention is completed. The display of the present invention is particularly advantageous when the screen is enlarged, and is advantageous for displays having a diagonal of 10 inches or more (particularly 30 inches or more).

  As described above, the application range of the present invention is extremely wide and can be applied to electronic devices in various fields. Moreover, the electronic device of a present Example is realizable even if it uses the structure which consists of a combination of Example 1-2 or 3.

The figure which shows the example of the laser beam formed in the irradiation surface which this invention discloses. The figure which shows the relationship between the distance between the centers of two laser beams, and the difference in energy density. The figure which shows the example of the laser irradiation apparatus which this invention discloses. The figure which shows the example of the mode of a interlocking | linkage with a galvanometer mirror and a gonio stage. The figure which shows the example of the laser irradiation apparatus which this invention discloses. The figure which shows the example of the laser irradiation apparatus which this invention discloses. The figure which shows the example of the relationship between the output of a laser, and a crystallization area | region. The figure which shows the example of the conventional laser beam formed in an irradiation surface. Sectional drawing which shows the manufacturing process of TFT of a pixel TFT and a driver circuit. Sectional drawing which shows the manufacturing process of TFT of a pixel TFT and a driver circuit. Sectional drawing which shows the manufacturing process of TFT of a pixel TFT and a driver circuit. FIG. 6 is a top view illustrating a configuration of a pixel TFT. Sectional drawing which shows the manufacturing process of an active-matrix liquid crystal display device. FIG. 6 is a cross-sectional structure diagram of a driver circuit and a pixel portion of a light emitting device. FIG. 11 illustrates an example of a semiconductor device. FIG. 11 illustrates an example of a semiconductor device. FIG. 11 illustrates an example of a semiconductor device.

Explanation of symbols

10a to 10b Laser 11a to 11b Convex cylindrical lens 12 Galvano mirror 13 Substrate 14 Suction stage 15 Goniometer stage 16 Ball screw 17 Laser light 18 Galvano mirror vibration direction 19 Goniometer stage vibration direction 20 Laser light movement direction 21 Ball screw rotation direction 22 Substrate moving direction 23 Polygon mirror 24 Polygon mirror rotating direction 25 Laser light moving direction 26 fθ lens 27 Stage 28 Stage moving direction

Claims (18)

Laser,
An optical system for processing the laser light emitted from the laser into a linear shape;
A galvanometer mirror for deflecting the linear laser beam;
Possess a goniometer which the deflected laser beam to fix the stage to be incident,
The laser irradiation apparatus, wherein the deflected laser light is incident on the stage at a constant angle . In claim 1,
A laser irradiation apparatus comprising means for synchronizing the galvanometer mirror and the gonio stage. Laser,
An optical system for processing the laser light emitted from the laser into a linear shape;
A polygon mirror for deflecting the linear laser beam;
Possess a goniometer which the deflected laser beam to fix the stage to be incident,
The laser irradiation apparatus, wherein the deflected laser light is incident on the stage at a constant angle . In claim 3,
A laser irradiation apparatus comprising means for synchronizing the polygon mirror and the gonio stage. In any one of Claims 1 thru | or 4,
A laser irradiation apparatus, wherein the laser beam is moved on the stage while maintaining a constant shape. In any one of Claims 1 thru | or 5 ,
A laser irradiation apparatus having a slit for blocking both ends of the laser beam. In any one of Claims 1 thru | or 6 ,
The lasers are YAG laser, YVO ₄ laser, YLF laser, YAlO ₃ laser, glass laser, ruby laser, alexandrite laser, Ti: sapphire laser, excimer laser, Ar laser, Kr laser, CO ₂ laser, helium cadmium laser, copper A laser irradiation apparatus which is a vapor laser or a gold vapor laser. Processing the laser beam emitted from the laser into a line,
The linear laser beam is deflected by a galvanometer mirror,
The deflected laser light is incident on an irradiation object fixed to a gonio stage,
A laser irradiation method, wherein the laser beam is moved on the irradiated object while keeping its shape constant. In claim 8 ,
A laser irradiation method, wherein the galvanometer mirror and the gonio stage are vibrated in conjunction with each other. Processing the laser beam emitted from the laser into a line,
The linear laser beam is deflected by a polygon mirror,
The deflected laser light is incident on an irradiation object fixed to a gonio stage,
A laser irradiation method, wherein the laser beam is moved on the irradiated object while keeping its shape constant. In claim 10 ,
A laser irradiation method, wherein the polygon mirror and the gonio stage are vibrated in conjunction with each other. In any one of Claims 8 thru | or 11 ,
A laser irradiation method, wherein the deflected laser light is incident on the irradiated body at a constant angle. In any one of Claims 8 to 12 ,
A laser irradiation method, wherein the length of the laser beam is adjusted by blocking an end of the laser beam. In any one of Claims 8 to 13 ,
As the laser, YAG laser, YVO ₄ laser, YLF laser, YAlO ₃ laser, glass laser, ruby laser, alexandrite laser, Ti: sapphire laser, excimer laser, Ar laser, Kr laser, CO ₂ laser, helium cadmium laser, copper A laser irradiation method using a vapor laser or a gold vapor laser. The method for manufacturing a semiconductor device, which comprises heating the semiconductor film using the laser irradiation method according to claims 8 to 14. The method for manufacturing a semiconductor device characterized by crystallizing a semiconductor film using the laser irradiation method according to claims 8 to 14. The method for manufacturing a semiconductor device characterized by activating the semiconductor film using the laser irradiation method according to claims 8 to 14. The method for manufacturing a semiconductor device according to crystallize the semiconductor film using the laser irradiation method according to claims 8 to 14, characterized by activating the crystallized semiconductor film.

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