JP2003213438A - Plating apparatus and plating method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a plating apparatus and a plating method capable of easily depositing a uniform plating film on a surface to be plated by uniformly preheating a work over the entire surface, and easily increasing the throughput. <P>SOLUTION: The plating apparatus comprises a plating tank 14 which is open upwardly to store heated electrolyte 12, a stage 16 which is disposed inside the plating tank 14, and seals and holds a back side of a work W with a surface to be plated of the work facing upwardly, and an electrolyte level regulating unit 42 which regulates the level of the electrolyte 12 in the plating tank 14 to the level slightly lower than the surface of the stage 16 in a non- plating mode, and to the level at which the work W held by the stage 16 is dipped in the electrolyte 12 in a plating mode. <P>COPYRIGHT: (C)2003,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plating apparatus and a plating method, and in particular, a fine wiring recess provided on the surface of a substrate such as a semiconductor substrate is filled with a conductor such as copper or silver to form a buried wiring. The present invention relates to an electroless plating apparatus and a plating method used for forming and forming a protective film for protecting the surface of the wiring thus formed.

[0002]

2. Description of the Related Art Electroless plating is a method in which metal ions in a plating solution are chemically reduced to form a plating film on a surface to be plated of a material to be processed without applying electricity from the outside. It is widely used for corrosion- and wear-resistant nickel-phosphorus, nickel-boron plating, and copper plating for printed wiring boards.

As this electroless plating apparatus, a plating tank for holding an electroless plating solution and a plating tank which is arranged above the plating tank and faces a material to be treated such as a substrate downward (face down)
It has a holding part that can be moved up and down and is held by this holding part so that the material to be processed is immersed in the plating solution in the plating tank, or the material to be processed such as the substrate faces up (face-up). ), And a plating solution supply section (nozzle) for supplying the electroless plating solution to the upper surface (surface to be plated) of the material to be processed held by this retention section. A device in which an electroless plating solution is made to flow along the upper surface of a material to be processed is generally known.

With the recent increase in speed and integration of semiconductor chips, as a metal material for forming a wiring circuit on a semiconductor substrate, aluminum or aluminum alloy has been replaced with low electric resistivity and high electromigration resistance. The movement of using copper (Cu) has become remarkable. This kind of copper wiring is generally formed by embedding copper inside the fine recesses provided on the surface of the substrate. As a method of forming this copper wiring, there are techniques such as CVD, sputtering and plating, but plating is common.
In any case, after forming a copper layer on the surface of the substrate, the surface is polished flat by chemical mechanical polishing (CMP).

In this type of wiring, the surface of the wiring is exposed to the outside after being flattened, and when a buried wiring is formed thereon, for example, SiO ₂ in the next step of forming an interlayer insulating film. During surface oxidation during formation and SiO ₂ etching for forming contact holes, there is concern about surface contamination due to etchant of the wiring exposed at the bottom of the contact hole, resist peeling, and copper diffusion in copper wiring. Has been done.

Therefore, the surface of the wiring is selectively coated with a protective film (plating film) made of, for example, a Ni--B alloy film, which has a strong bond with a wiring material such as silver or copper and has a low specific resistance (ρ). It may be possible to cover it by protecting it. Where Ni-B
The alloy film is formed of, for example, copper by subjecting it to electroless plating using an electroless plating solution containing nickel ions, a complexing agent for nickel ions, an alkylamine borane as a reducing agent for nickel ions, or a borohydride compound. Can be selectively formed on the surface of.

[0007]

Electroless plating is applied to a main filling material (Cu) of copper wiring, formation of a seed layer on a barrier metal, or reinforcement of seed (Cu).
Further, the barrier metal itself is formed, and the copper wiring material is formed as a lid material (all are Ni-P, Ni-B, Co-P, Ni-
WP, Ni-Co-P, Co-WP, Co-W-
B) and the like, but in any electroless plating process, the uniformity of the film thickness is required over the entire surface of the material to be treated.

In electroless plating, the material to be treated comes into contact with the electroless plating solution and at the same time the plating metal is deposited on the surface to be plated, and the deposition rate of the plating metal varies depending on the temperature of the plating solution. Therefore, in order to form a plating film with a uniform film thickness on the plated surface of the material to be processed, the temperature of the plating solution is uniform over the entire surface of the surface to be plated from the beginning when the plating solution contacts the material to be processed. Therefore, it is required to keep this temperature constant throughout the entire plating process during contact.

However, the conventional electroless plating apparatus generally holds a workpiece such as a substrate in close contact with the upper surface or the lower surface of a holder containing a heater, and heats the workpiece through the heater. The surface to be plated of the material to be treated is brought into contact with the electroless plating solution heated to a predetermined temperature. However, when the substrate is heated by the heater in this way, the temperature on the entire surface of the material to be processed is not uniform, and there is a problem in temperature uniformity, and the material to be processed is dried by the heat of the heater.

Further, in order to prevent the deviation of the temperature of the plating solution in the plating tank and ensure the uniformity of plating, it is generally carried out to hold the material to be treated by a holder and rotate the holder by a motor. However, if a holder for holding the material to be processed is provided and the holder is rotated by a motor as described above, not only the structure becomes complicated, but also, for example, a large number of plating tanks are arranged to improve throughput. However, there is a problem in that the size of the device is increased and the footprint is increased at the same time.

As described above, the temperature on the entire surface of the material to be processed is not uniform and there is a problem in temperature uniformity, and a holder for holding the material to be processed is provided, and this holder is rotated by a motor. If this is done, the apparatus becomes complicated, and it is difficult to increase the throughput, even in the electrolytic plating apparatus.

The present invention has been made in view of the above, and can uniformly preheat a material to be treated over its entire surface to easily form a uniform plated film on the surface to be plated, and also easily increase throughput. It is an object of the present invention to provide a plating apparatus and a plating method capable of performing the above.

[0013]

The invention according to claim 1 is a plating tank which is opened upward and holds a heated plating solution; and a material to be treated, which is disposed inside the plating tank. The stage where the surface to be plated of the material is facing upward and the back surface is sealed and held, and the liquid level of the plating solution in the plating tank is set to a level slightly lower than the surface of the stage when non-plating and at the stage when plating. The plating apparatus is characterized by having a liquid surface level adjusting unit that adjusts the held material to be processed to a level at which it is immersed in the plating solution.

Thus, the non-plating stage can uniformly heat the stage with the plating solution itself held in the plating tank to uniformly preheat the material to be treated held on the stage. Moreover, by preheating the substrate with the plating solution itself in this manner, a holder for holding and heating the substrate is not required, so that the structure can be simplified and the substrate can be prevented from being dried.

The invention according to claim 2 is the plating apparatus according to claim 1, wherein the stage is configured to hold a material to be processed in a horizontal or inclined state. As described above, by tilting and holding the material to be processed, it is possible to more easily drain the plating solution remaining on the upper surface of the material to be processed after plating.

The invention according to claim 3 further comprises a swirl flow forming section for forming a swirl flow in the plating solution in the plating tank by the plating solution introduced into the plating tank. The plating apparatus according to 1 or 2. In this way, by forming a swirl flow in the plating solution in the plating tank with the plating solution introduced into the plating tank, the temperature of the plating solution in the plating tank is rotated, for example, by using a motor to rotate the holder or the like. Can be made uniform without

The invention according to claim 4 is characterized in that the stage is rotatably supported, and the stage further comprises a stage rotating part for rotating the stage with a plating solution introduced into a plating tank. Alternatively, the plating apparatus described in 2. In this way, by rotating the stage that holds the material to be treated with the plating solution introduced into the plating tank, the temperature of the plating solution in the plating tank can be adjusted without rotating the holder etc. using a motor, for example. , Can be uniform.

The invention according to claim 5 is the plating apparatus according to any one of claims 1 to 4, wherein a plurality of the stages are arranged in parallel inside the plating tank. is there. This can increase the throughput.

The invention according to a sixth aspect is characterized in that a plurality of the plating tanks are provided and are stacked in multiple stages, and the plating solution is supplied to each plating tank from a single plating solution circulating tank. The plating apparatus according to any one of claims 1 to 5. This can increase the throughput.

According to a seventh aspect of the present invention, an upper opening is provided,
The material to be treated is held on a stage arranged in a plating tank that holds the heated plating solution with the surface to be plated of the material to be treated facing upward, and the level of the plating solution in the plating tank during the non-plating is set to the above-mentioned level. The plating method is characterized in that the stage is heated to a level slightly lower than the surface of the stage, the stage is heated with a plating solution, and the material to be treated held on the stage is immersed in the plating solution during plating.

The invention according to claim 8 is the plating method according to claim 7, wherein a swirl flow is formed in the plating solution in the plating tank by the plating solution introduced into the plating tank. . The invention according to claim 9 is the plating method according to claim 7, wherein the stage holding the material to be treated is rotated by a plating solution introduced into a plating tank.

[0022]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 shows an example of copper wiring formation in a semiconductor device in the order of steps. First, as shown in FIG. 1A, SiO ₂ is formed on a conductive layer 1a on a semiconductor substrate 1 on which a semiconductor element is formed. An insulating film 2 is deposited, and a contact hole 3 and a wiring groove 4 are formed in the insulating film 2 by, for example, a lithographic etching technique.
A barrier layer 5 made of TaN or the like is further formed thereon, and a copper seed layer 6 as a power feeding layer for electrolytic plating is further formed thereon by sputtering or the like.

Then, as shown in FIG. 1B, the surface of the semiconductor substrate W is plated with copper to fill the contact holes 3 and the grooves 4 of the semiconductor substrate W with copper, and at the same time, to cover the insulating film 2. A copper layer 7 is deposited on. Then, the copper layer 7 on the insulating film 2 is removed by chemical mechanical polishing (CMP), and the surface of the copper layer 7 filled in the contact hole 3 and the wiring groove 4 and the surface of the insulating film 2 are removed. Are almost in the same plane. As a result, as shown in FIG. 1C, the insulating film 2
A wiring 8 composed of a copper seed layer 6 and a copper layer 7 is formed inside. Next, for example, electroless Ni-B plating is applied to the surface of the substrate W, and as shown in FIG. 1D, a protective film (plating film) 9 made of a Ni-B alloy film is formed on the exposed surface of the wiring 8. Are selectively formed to protect the wiring 8.

FIG. 2 shows an electroless plating apparatus according to an embodiment of the present invention. This electroless plating apparatus is shown in FIG.
Is used for forming the barrier layer 5, reinforcing the copper seed layer 6, depositing the copper layer 7, and forming a protective film (plating film) 9.

This electroless plating apparatus 10 has a plating tank 14 which is opened upward and holds the plating solution 12 therein, and a substrate (a material to be processed) W such as a semiconductor wafer which is arranged inside the plating tank 14. Has a disk-shaped substrate stage 16 for holding the substrate W with the surface (surface to be plated) facing upward (face up). The substrate stage 16 is connected to the upper end of a support shaft 17 which is erected on the bottom of the plating tank 14. Further, a ring-shaped sealing material 18 that is in contact with the outer peripheral surface of the back surface of the substrate W is attached to the outer peripheral surface of the upper surface of the substrate stage 16. By vacuuming the inside of the sealing material 18, the outer peripheral surface of the rear surface of the substrate W is The substrate W is vacuum-chucked while being sealed with the sealing material 18.

A plurality of plating solution introduction paths 20 are provided at the bottom of the plating tank 14, and a first plating solution discharge path 22a and a second plating solution discharge path 22b are provided at two positions above and below the side wall. Then, the plating solution circulating tank 26, which has a heating device 24 such as a heater inside, is connected to the plating solution supply pipe 30 and the plating solution introducing passage 20, which are internally provided with a pump 28, from the plating solution circulating tank 26. Extended plating solution return pipe 3
The plating solution discharge passages 22a and 22b are connected to 2.
As a result, the plating solution 12 is heated to a predetermined temperature in the plating solution circulating tank 26, and is introduced into the plating tank 14 from the plating solution introducing passage 20 as the pump 28 is driven.
First plating solution discharge path 22a or second plating solution discharge path 2
2b overflows and returns to the plating solution circulating tank 26. The temperature of the plating solution 12 is, for example, 2
The temperature is about 5 to 90 ° C, preferably about 55 to 85 ° C, and more preferably about 60 to 80 ° C. Further, on the downstream side of the pump 28 of the plating solution supply pipe 30, the three-way valve 3
4 is connected to the three-way valve 34, and a plating solution escape pipe 36 that allows a part of the plating solution to escape to the plating solution circulation tank 26 is connected to the three-way valve 34.

The first plating solution discharge passage 22a provided on the side of the plating tank 14 is the plating solution discharge passage 22.
When the plating solution 12 overflows through a, the liquid level of the plating solution 12 is located above the substrate W held by the substrate stage 16 and the substrate W is immersed in the plating solution 12, The second plating solution discharge passage 22b is
When the plating solution 12 overflows through the plating solution discharge passage 22b, the level of the plating solution 12 is located slightly below the surface of the substrate stage 16. Then, each of the plating solution discharge paths 22
On-off valves 38a and 38b are provided on the a and 22b, respectively, and a control unit 40 for controlling the on-off valves 38a and 38b is further provided to configure a liquid level adjusting unit 42.

As a result, at the time of non-plating, by opening the second plating solution discharge passage 22b located below, the liquid level of the plating solution 12 in the plating tank 14 is adjusted to the substrate stage 16
The substrate stage 16 is preheated by heating the substrate stage 16 with the plating solution 12 in the plating tank 14 by positioning the substrate stage 16 slightly below the surface of the substrate stage 16. Then, at the time of plating, the second plating solution discharge passage 22b located below is closed,
By opening the first plating solution discharge passage 22a located above, the liquid level of the plating solution 12 in the plating tank 14 is located above the substrate W held by the substrate stage 16, and the substrate W is removed. It is designed to be immersed in it.
Further, above the substrate stage 16, an inert gas such as N ₂ gas is introduced to the upper surface (plating surface) of the substrate W held by the substrate stage 16 so that the plating remaining on the upper surface (surface) of the substrate W. An inert gas introducing part 44 for draining the liquid is provided.

In the electroless plating apparatus of this embodiment, when the first substrate W is first plated, the liquid temperature is set to a predetermined temperature, for example, while the substrate W is held by the substrate stage 16. , 70 ° C., the plating solution 12 is introduced into the plating tank 14 from the plating solution circulation tank 26, and is overflowed from the second plating solution discharge passage 22b located below.
As a result, the substrate stage 16 is brought into contact with the plating solution 12 to preheat the substrate stage 16.

Then, when the substrate stage 16 reaches a predetermined temperature, the second plating solution discharge passage 22b located below is placed.
And the liquid level of the plating solution 12 in the plating tank 14 is raised to remove the plating solution 12 from the first plating solution discharge passage 22a.
From the substrate stage 1
The substrate W held in 6 is immersed in the plating solution 12 to plate the exposed upper surface (front surface).

After the completion of plating, the second plating solution discharge passage 22b
Open to lower the level of the plating solution 12 in the plating tank 14 to expose the substrate W held by the substrate stage 16.
The surface (upper surface) of the substrate W held by the substrate stage 16
An inert gas such as N ₂ gas is introduced to remove the plating solution remaining on the surface of the substrate W, and then the substrate W after plating is carried out to the next step. Then, for the second and subsequent substrates, the second plating solution discharge path 2 is used as described above.
The plating solution 12 is caused to overflow from 2b, the substrate stage 16 is heated by the plating solution 12, the substrate W is placed and held on the upper surface, and the above-described operation is repeated.

In this way, the substrate stage 1 during non-plating
6 is uniformly heated by the plating solution 12 itself held in the plating tank 14, and the substrate W held on the substrate stage 16
By eliminating the contact part with low temperature, the holder for holding and heating the substrate, which is generally equipped in the conventional plating equipment, is not required, which simplifies the structure and prevents the substrate from drying. You can

FIG. 3 shows an electroless plating apparatus according to the second embodiment of the present invention. This electroless plating apparatus 10a is
A truncated trapezoidal material is used as the sealing material 18a, whereby the substrate W is held at the substrate stage 16 while being inclined with respect to the horizontal plane at an inclination angle θ. The inclination angle θ is, for example, 5 to 10 °.
Other configurations are similar to those shown in FIG. In this way, by holding the substrate W tilted with respect to the horizontal plane, it is possible to more easily drain the plating solution remaining on the surface (upper surface) of the substrate W after plating.

FIGS. 4 and 5 show an electroless plating apparatus according to the third embodiment of the present invention. This electroless plating equipment 1
0b is a predetermined pitch along the circumferential direction below the first plating solution discharge passage 22a provided on the side of the plating tank 14,
In addition, a plurality of first plating solution introduction paths 46a are provided in a state of being inclined with respect to the diametrical direction of the plating tank 14, and also below the second plating solution discharge path 22b provided on the side portion of the plating tank 14. The plurality of second plating solution introducing passages 46b are provided at a predetermined pitch along the circumferential direction and in a state of being inclined with respect to the diameter direction of the plating tank 14. Further, inside the substrate stage 16 as well, a plurality of third plating solution introducing passages 46c that communicate with the plating solution circulating portion 48 provided inside the support shaft 17 and curve in one direction and extend spirally are provided. A swirling flow forming portion is constituted by these plating solution introducing passages 46a, 46b, 476c. Other configurations are similar to those shown in FIG.

According to this example, at the time of non-plating, the plating solution 12 is introduced into the plating tank 14 from the second plating solution introduction path 46b and the third plating solution introduction path 46c, and the second plating solution discharge path 22b. From above, the plating solution 12 in the plating tank 14 overflows, thereby forming a swirl flow in the plating solution 12 in the plating tank 14. Further, at the time of plating, the plating solution 12 is further introduced into the plating tank 14 from the first plating solution introduction path 46a, and the first plating solution discharge path 22b.
The plating solution 12 in the plating tank 14 is caused to overflow, whereby a swirling flow is formed in the plating solution 12 in the plating tank 14.

In this way, by forming a swirl flow in the plating solution 12 in the plating tank 14 with the plating solution 12 introduced into the plating tank 14, the temperature of the plating solution 12 in the plating tank 14 can be adjusted, for example, to the conventional one. As is generally used, it is possible to make the holder uniform without rotating the holder and the like using a motor. The swirling speed of the plating solution 12 may be, for example, about 1 to 3 rpm at which the temperature of the plating solution 12 becomes uniform.

FIGS. 6 and 7 show an electroless plating apparatus according to the fourth embodiment of the present invention. This electroless plating equipment 1
0c rotatably supports a support shaft 17 connected to the upper end of the substrate stage 16 on the bottom of the plating tank 14, and arranges a plating solution introduction path 52 so as to surround the support shaft 17, and introduces the plating solution. A plurality of plating solution injection holes 52a for radially injecting the plating solution 12 are provided at a position located inside the plating tank 14 of the passage 52, and further, the plating sprayed from the plating solution injection holes 52a is provided on the back surface of the substrate stage 16. A plurality of blades 50 are provided so as to collide with the liquid 12, and the stage rotating unit is configured. Other configurations are similar to those shown in FIG.

According to this example, the plating solution 12 is introduced into the plating tank 14 from the plating solution injection port 52a of the plating solution introduction passage 52.
Is introduced, and the plating solution 12 introduced at this time is the blade 5
The substrate stage 16 rotates due to the pressure difference formed on both sides of the blade upon collision with 0. In this way, by rotating the substrate stage 16 with the plating solution introduced into the plating tank 14, the temperature of the plating solution 12 in the plating tank 14 can be adjusted by using a motor, for example, as conventionally used. It can be made uniform without rotating the holder or the like. The rotation speed of this substrate stage 16 is
The temperature may be uniform, for example, about 1 to 3 rpm.

FIGS. 8 and 9 show an electroless plating apparatus according to another fourth embodiment of the present invention. In this electroless plating apparatus 10d, a rotating body 54 having a plurality of plating solution flow passages 54a curved in one direction and spirally extending therein is fixed to the back surface of the substrate stage 16, whereby the plating solution introduction path is formed. The plating solution 12 ejected from the plating solution ejection port 52a of 52 flows along the plating solution flow path 54a to rotate the substrate stage 16. Other configurations are similar to those shown in FIGS. 6 and 7.

FIG. 10 shows an electroless plating apparatus according to the fifth embodiment of the present invention. This electroless plating apparatus 10e
Are installed in the large plating tank 14a (2 in the figure.
1) substrate stages 16 are installed. According to this example, the plating solution 12 introduced into the plating tank 14a
Since the substrate stage 16 can be preheated to a predetermined temperature with, it is not necessary to provide a substrate holder that is generally provided in a conventional plating apparatus for holding and heating a substrate and rotating it as necessary. Therefore, by disposing a plurality of (two in the figure) substrate stages 16 inside the large plating tank 14a and performing parallel processing of substrates in this manner, throughput can be improved.

FIG. 11 shows an electroless plating apparatus according to the sixth embodiment of the present invention. This electroless plating device 10f
Is configured such that the plating tanks 14 in which the substrate stages 16 are installed are stacked in multiple stages (two stages in the figure), and the plating solution is supplied into each of the plating tanks 14 from a single plating solution circulating tank. It is a thing. As described above, the substrate W can be preheated to a predetermined temperature without the substrate holder that is generally provided in the conventional plating apparatus.
Such a configuration becomes possible, and by doing the parallel processing of the substrates, the throughput can be improved. In the examples shown in FIGS. 10 and 11, the plating solution introduced into the plating tank does not form a swirling flow in the plating solution in the plating tank, or the substrate stage holding the substrate is not rotated. Of course, such a configuration may be adopted.

FIG. 12 shows an overall structure of a plating processing apparatus for performing a series of plating processing by the electroless plating apparatus 10 shown in FIG. 2, for example. This plating apparatus includes a pair of electroless plating apparatuses 10, a load / unload unit 70, for example, a catalyst treatment for applying a Pd catalyst or a plating treatment such as an oxide film removal treatment for removing an oxide film attached to the exposed wiring surface. Plating pretreatment device 72 for performing treatment, temporary placing portion 7 capable of rough cleaning
4 and the post-cleaning device 76, and the substrate W between the loading / unloading unit 70, the post-cleaning device 76 and the temporary placing unit 74.
First transport device 78a for transporting the electroless plating device and electroless plating device 1
A second transfer device 78b that transfers the substrate W is provided between the pre-plating treatment device 72 and the temporary placement part 74.

Next, a series of plating processing steps by the plating processing apparatus configured as described above will be described. First, the substrate W held by the loading / unloading unit 70 is taken out by the first transfer device 78 a and placed on the temporary placement unit 74.
The second transfer device 78b transfers this to the pre-plating processing device 72, where pre-plating such as a catalyst applying process using a catalyst such as a PdCl ₂ solution or an oxide film removing process for removing an oxide film attached to the exposed wiring surface. It is processed and then rinsed.

The second transfer device 78b further transfers the substrate W to the electroless plating device 10, where it performs an electroless plating process using a predetermined reducing agent and a predetermined plating solution. Next, the substrate after plating is taken out from the electroless plating device 10 by the second transfer device 78 b and is transferred to the temporary placement part 74. In the temporary placement unit 74, the substrate is roughly cleaned. Then, the first transfer device 78a
Carries the substrate to the post-cleaning device 76, and the post-cleaning device 76 performs the final cleaning with a pencil sponge and the spin-drying to dry the load / unload unit 70.
Return to. The substrate is later transferred to a plating device or an oxide film forming device.

FIG. 13 shows the overall structure of a plating processing apparatus for performing a series of plating processing (lid plating processing) for forming the protective film 9 shown in FIG. This plating equipment is
It has an unloading unit 80, a pretreatment unit 82, a Pd adhesion unit 84, a plating pretreatment unit 86, an electroless plating apparatus 10 and a cleaning / drying treatment unit 88, and further, it can travel along a transport path 90, Transfer device 92 for transferring substrates between
Is provided.

Next, a series of plating processes (cap plating process) by the plating apparatus configured as described above will be described. First, the substrate W held by the loading / unloading unit 80 is taken out by the transfer device 92, and the pretreatment unit 8
Then, the substrate is subjected to a pretreatment for cleaning the surface of the substrate again, for example. Then, Pd is adhered to the surface of the copper layer 7 (see FIG. 1) by the Pd adhering portion 84 to activate the exposed surface of the copper layer 7, and thereafter, pre-plating treatment such as neutralization is performed by the pre-plating treatment portion 86. Apply processing. Next, it is conveyed to the electroless plating apparatus 10, and here, on the surface of the activated copper layer 7,
For example, selective electroless plating with Co-WP is performed, thereby protecting the exposed surface of the copper layer 7 with a Co-WP film (protective film) 9 as shown in FIG. . Examples of the electroless plating solution include a salt of cobalt and a salt of tungsten, a reducing agent, a complexing agent, a pH buffering agent, and p.
The thing which added the H regulator is mentioned.

The surface exposed after polishing is subjected to, for example, electroless Ni-B plating, and a protective film (plating film) 9 made of a Ni-B alloy film is selectively formed on the exposed surface of the wiring 8. The wiring 8 may be formed to protect the wiring 8.
The thickness of the protective film 9 is 0.1 to 500 nm, preferably 1 to 200 nm, more preferably 10 to 100 n.
It is about m.

The electroless Ni-B plating solution for forming the protective film 9 contains, for example, nickel ions, a complexing agent for nickel ions, an alkylamine borane as a reducing agent for nickel ions, or a borohydride compound, What adjusted pH to 5-12 using TMAH (tetramethylammonium hydroxide) for pH adjustment is used.
Next, the substrate W after the lid plating processing is transported to the cleaning / drying processing unit 88 to be subjected to cleaning / drying processing, and the substrate W after cleaning / drying is loaded / unloaded by the transportation device 92.
Return to the cassette.

In this example, as the lid plating treatment,
Before performing the Co-WP electroless plating treatment, the exposed surface of the copper layer 7 activated by depositing Pd was Co.
An example in which the -WP film is selectively coated is shown, but the present invention is not limited to this. Further, each of the above examples shows an example applied to an electroless plating apparatus, but it goes without saying that it can also be applied to an electrolytic plating apparatus in which a plating current is caused to flow between an anode and a cathode during plating. .

FIG. 14 is a plan layout view of a substrate processing apparatus equipped with the above-described plating apparatus. As shown in the figure, this substrate processing apparatus performs a loading / unloading area 520 for delivering and receiving a substrate cassette accommodating semiconductor substrates, a process area 530 for performing process processing, and cleaning and drying of the semiconductor substrate after the process processing. A cleaning / drying area 540 is provided. The cleaning / drying area 540 is arranged between the loading / unloading area 520 and the process area 530. Loading / unloading area 520 and washing / drying area 540
A partition 521 is provided in the above, and a partition 523 is provided between the cleaning / drying area 540 and the process area 530.

The partition 521 has a loading / unloading area 520.
A passage (not shown) for transferring the semiconductor substrate is provided between the cleaning and drying area 540 and a shutter 522 for opening and closing the passage. In addition, the partition wall 523
Also, a passage (not shown) for transferring the semiconductor substrate is provided between the cleaning / drying area 540 and the process area 530, and a shutter 524 for opening and closing the passage is provided. Cleaning / drying area 540 and process area 53
0 can supply and exhaust air independently.

The substrate processing apparatus for wiring a semiconductor substrate having the above-mentioned configuration is installed in a clean room, and the pressure in each area is (pressure in loading / unloading area 520)> (pressure in cleaning / drying area 540)> (process area) (The pressure of 530) and the pressure of the carry-in / carry-out area 520 is set lower than the pressure in the clean room. This allows
Prevent air from flowing from the process area 530 to the cleaning / drying area 540, and prevent air from flowing from the cleaning / drying area 540 to the loading / unloading area 520,
Further, air is prevented from flowing out of the carry-in / carry-out area 520 into the clean room.

In the carry-in / carry-out area 520, a load unit 52 for accommodating a substrate cassette accommodating semiconductor substrates is provided.
0a and unload unit 520b are arranged.
In the cleaning / drying area 540, two water washing sections 541 and two drying sections 542 for performing post-plating processing are arranged, and a transfer section (transfer robot) for transferring semiconductor substrates.
543 is provided. As the water washing section 541, for example, a pencil type with a sponge on the front end or a roller type with a sponge is used. Drying part 5
As 42, for example, a type in which a semiconductor substrate is spun at high speed to dehydrate and dry is used. In the process area 530, a pretreatment tank 531 for performing a pretreatment for plating a semiconductor substrate and a plating tank (plating device) 532 for performing a copper plating treatment are arranged, and a transport unit (transportation) for transporting a semiconductor substrate. Robot 533 is provided.

FIG. 15 shows the flow of airflow in the substrate processing apparatus. In the cleaning / drying area 540, piping 546
Fresher external air is taken in and high performance filter 544
Is pressed by a fan through the ceiling 540a, and the washing section 541 and the drying section 5 are provided as clean air having a downflow from the ceiling 540a.
It is supplied around 42. Most of the clean air supplied is supplied from the floor 540b to the ceiling 54 through the circulation pipe 545.
It is returned to the 0a side, pushed again by the fan through the high-performance filter 544, and circulates in the cleaning / drying area 540. Part of the airflow is the washing part 541 and the drying part 542.
The air is exhausted from the inside through the duct 552.

Although the process area 530 is called a wet zone, particles are not allowed to adhere to the surface of the semiconductor substrate. Therefore, the process area 530
Particles are prevented from adhering to the semiconductor substrate by being pushed in by a fan from the ceiling 530a and flowing down-flow clean air through the high-performance filter 533.

However, if the total flow rate of the clean air forming the downflow depends on the supply / exhaust from the outside,
A huge amount of air supply and exhaust is required. For this reason, only the exhaust that maintains the negative pressure in the room is used as the external exhaust from the duct 553, and most of the downflow air is supplied to the pipes 534 and 53.
Circulating airflow through 5 is used to cover the situation.

When the circulating air flow is used, the process area 5
The clean air that has passed through 30 contains the chemical liquid mist and gas, so the clean air is passed through the scrubber 536 and the mito separator 53.
Remove through 7,538. As a result, the ceiling 530a
The air that has returned to the side circulation duct 534 does not contain the chemical mist or gas, is pushed again by the fan, passes through the high-performance filter 533, and circulates in the process area 530 as clean air.

Part of the air that has passed through the process area 530 from the floor portion 530b is discharged to the outside through the duct 553, and the air containing the chemical mist and gas is discharged to the outside through the duct 553. Duct 539 on the ceiling 530a
From the above, fresh air corresponding to these exhaust amounts is supplied to the process area 530 to such an extent that the negative pressure is maintained.

As described above, the respective pressures of the loading / unloading area 520, the cleaning / drying area 540 and the process area 530 are (pressure of the loading / unloading area 520)> (pressure of the cleaning / drying area 540)> (process Area 530 pressure). Therefore, the shutters 522, 524
When (see FIG. 14) is opened, the flow of air between these areas, as shown in FIG.
0, cleaning / drying area 540 and process area 530
Flow in order. Further, the exhaust gas is collected in the collective exhaust duct 554 through the ducts 552 and 553 as shown in FIG.

FIG. 16 is an external view showing an example in which the substrate processing apparatus is arranged in a clean room. Cassette delivery port 555 and operation panel 55 in the loading / unloading area 520
A side face 6 is exposed to a working zone 558 having a high cleanliness of a clean room partitioned by a partition wall 557, and the other side faces are housed in a utility zone 559 having a low cleanness.

As described above, the cleaning / drying area 540 is arranged between the loading / unloading area 520 and the process area 530, and the loading / unloading area 520 and the cleaning / drying area 5 are arranged.
40 and between the cleaning / drying area 540 and the process area 530, the partition walls 521 are provided, so that the partition wall 521 is carried from the working zone 558 into the substrate processing apparatus for semiconductor substrate wiring through the cassette transfer port 555 in a dried state. The semiconductor substrate to be processed is plated in the substrate processing apparatus, and is carried out to the working zone 558 in a cleaned and dried state. Therefore, particles and mist do not adhere to the surface of the semiconductor substrate and the cleanliness in the clean room is maintained. The high working zone 558 is not contaminated with particles, chemicals or cleaning liquid mist.

In FIGS. 14 and 15, the substrate processing apparatus has a loading / unloading area 520 and a cleaning / drying area 54.
0, the example in which the process area 530 is provided is shown, but an area in which the CMP device is arranged is provided in the process area 530 or adjacent to the process area 530, and the process area 530 or the area in which the CMP device is arranged and the carry-in / carry-out. A cleaning / drying area 540 may be arranged between the areas 520. The point is that the semiconductor substrate may be carried into the substrate processing apparatus for wiring the semiconductor substrate in a dry state, and the semiconductor substrate after the plating process may be washed and discharged in a dried state.

In the above example, the substrate processing apparatus has been described by taking the plating apparatus for semiconductor substrate wiring as an example. However, the substrate is not limited to the semiconductor substrate, and the portion to be plated is also formed on the surface of the substrate. It is not limited to the wiring part. Further, in the above example, copper plating was described as an example, but the invention is not limited to copper plating.

FIG. 18 is a diagram showing a planar configuration of another substrate processing apparatus for wiring a semiconductor substrate. As shown in the figure, a substrate processing apparatus for wiring a semiconductor substrate includes a carry-in section 601 for carrying in a semiconductor substrate, a copper plating tank 602 for copper plating, washing tanks 603, 604 for water washing, and a chemical mechanical polishing (CM).
PMP part 605 for performing P), water washing tanks 606 and 607, a drying tank 608, and a carry-out section 609 for carrying out the semiconductor substrate on which the wiring layer formation has been completed. Are arranged as one device to form a substrate processing device for semiconductor substrate wiring.

In the substrate processing apparatus having the above arrangement, the substrate transfer means takes out the semiconductor substrate on which the wiring layer is not formed from the substrate cassette 601-1 placed on the carry-in section 601 and transfers it to the copper plating tank 602. To do. In the copper plating tank 602, a copper plating layer is formed on the surface of the semiconductor substrate W including a wiring portion including wiring grooves and wiring holes (contact holes).

The semiconductor substrate W on which the copper plating layer has been formed by the copper plating layer 602 is washed with a substrate transfer means in a water bath 60.
3 and the washing tank 604, and wash with water. Subsequently, the semiconductor substrate W that has been washed with water is transferred to the CMP section 605 by a substrate transfer means, and in the CMP section 605, the copper plating layer formed in the wiring groove or the wiring hole from the copper plating layer is left and the semiconductor substrate W is left. The copper plating layer on the surface of is removed.

Subsequently, the semiconductor substrate in which the unnecessary copper plating layer on the surface of the semiconductor substrate W has been removed leaving the copper plating layer formed in the wiring portion including the wiring groove and the wiring hole from the copper plating layer as described above. W is sent to the washing tank 606 and the washing tank 607 by the substrate transfer means, washed with water, and the semiconductor substrate W that has been washed with water is dried in the drying tank 608, and the dried semiconductor substrate W is formed into a wiring layer. The finished semiconductor substrate is stored in the substrate cassette 609-1 of the carry-out section 609.

FIG. 19 is a diagram showing a planar structure of another substrate processing apparatus for wiring a semiconductor substrate. The substrate processing apparatus shown in FIG. 19 is different from the apparatus shown in FIG.
02, a lid plating tank 612 for forming a protective film on the surface of the copper plating film, a CMP section 615, and water washing tanks 613 and 614 are added, and these are configured as one device including them.

In the substrate processing apparatus having the above arrangement, the copper plating layer is formed on the surface of the semiconductor substrate W including the wiring portion including the wiring groove and the wiring hole (contact hole). Subsequently, the CMP portion 605 removes the copper plating layer on the surface of the semiconductor substrate W, leaving the copper plating layer formed in the wiring groove and the wiring hole from the copper plating layer.

Subsequently, the semiconductor substrate W from which the copper plating layer on the surface of the semiconductor substrate W has been removed by leaving the copper plating layer formed on the wiring portion including the wiring groove and the wiring hole as described above, is washed with water. It is transferred to a tank 610 and washed there with water. Subsequently, in the pretreatment tank 611, pretreatment for performing lid plating described later is performed. The semiconductor substrate W for which the pretreatment has been completed is transferred to the lid plating tank 612, and a protective film is formed on the copper plating layer formed on the wiring portion in the lid plating tank 612. As this protective film, for example, a Ni-B electroless plating bath is used.
After forming the protective film, the semiconductor substrate W is washed with water tanks 606, 6
It is washed with water at 07 and further dried in a drying tank 608. Then, the upper portion of the protective film formed on the copper plating layer is attached to the CMP portion 6
After polishing with 15, flattening, washing with water in washing tanks 613 and 614, and drying in a drying tank 608, the semiconductor substrate W is stored in the substrate cassette 609-1 of the carry-out section 609.

FIG. 20 is a diagram showing a planar structure of another substrate processing apparatus for wiring a semiconductor substrate. As shown in the figure, in this substrate processing apparatus, a robot 616 is arranged in the center, and a copper plating tank 602, a water washing tank 603, and a water washing tank 6 for performing copper plating in a range reached by a robot arm 616-1 around the robot 616.
04, CMP section 605, lid plating tank 612, drying tank 60
8 and the load / unload unit 617 are arranged to constitute one device. A semiconductor substrate carry-in unit 601 and a carry-out unit 609 are disposed adjacent to the load / unload unit 617.

In the substrate processing apparatus for wiring a semiconductor substrate having the above structure, the semiconductor substrate on which the wiring is not plated is loaded / unloaded from the carry-in portion 601 of the semiconductor substrate.
7, the semiconductor substrate is transferred to the robot arm 616-
1 is received and transferred to a copper plating tank 602, where a copper plating layer is formed on the surface of the semiconductor substrate including the wiring portion including wiring grooves and wiring holes. The semiconductor substrate on which the copper plating layer is formed is CMP by the robot arm 616-1.
Then, the excess CMP layer on the surface of the semiconductor substrate W is removed, leaving the copper plating layer formed in the wiring portion including the wiring groove and the wiring hole from the copper plating layer in the CMP portion 605.

The semiconductor substrate from which the excess copper plating layer on the surface has been removed is washed by the robot arm 616-1 in the water washing tank 60.
After being transferred to No. 4 and washed with water, it is transferred to a pretreatment tank 611, and pretreatment before cover plating is performed in the pretreatment tank 611. The semiconductor substrate after the pretreatment is transferred to the cover plating tank 612 by the robot arm 616-1, and is protected on the copper plating layer formed in the wiring portion including the wiring groove and the wiring hole in the cover plating tank 612. Form a film. The semiconductor substrate on which the protective film is formed is the robot arm 6
16-1 transfers to a water washing tank 604, where it is washed with water, is then transferred to a drying tank 608, is dried, and is then transferred to a load / unload unit 617. The semiconductor substrate on which the wiring plating has been completed is transferred to the carry-out section 609.

FIG. 21 is a diagram showing a planar structure of another semiconductor substrate processing apparatus. This semiconductor substrate processing apparatus includes a load / unload unit 701, a copper plating unit 702, a first robot 703, a third cleaning machine 704, a reversing machine 705,
Inversion machine 706, second cleaning machine 707, second robot 70
8, a first cleaning machine 709, a first polishing device 710 and a second polishing device 711 are arranged.
In the vicinity of the first robot 703, a pre- and post-plating film thickness measuring device 712 for measuring the film thickness before and after plating, and a dry film thickness measuring device 7 for measuring the film thickness of the semiconductor substrate W in a dry state after polishing.
13 are arranged.

First polishing device (polishing unit) 7
10 is a polishing table 710-1 and a top ring 710.
-2, top ring head 710-3, film thickness measuring machine 71
It is equipped with 0-4 and pushers 710-5. The second polishing device (polishing unit) 711 includes a polishing table 711-1, a top ring 711-2, a top ring head 711-3, a film thickness measuring machine 711-4, and a pusher 711-5.

A loading / unloading unit 701 is provided with a cassette 701-1 containing a semiconductor substrate W in which a contact hole and a groove for wiring are formed, and a seed layer is formed thereon.
Place it on the load port. The first robot 703 takes out the semiconductor substrate W from the cassette 701-1 and carries it into the copper plating unit 702 to form a copper plating film. At that time, the film thickness of the seed layer is measured by the film thickness measuring device before and after plating 712. The copper plating film is formed by first performing hydrophilic treatment on the surface of the semiconductor substrate W and then performing copper plating. After the copper plating film is formed, the copper plating unit 702 performs rinsing or cleaning. If you have time, you can dry it.

The first robot 703 uses the copper plating unit 7
When the semiconductor substrate W is taken out of No. 02, the film thickness of the copper plating film is measured by the film thickness measuring device before and after plating 712. The measurement result is recorded as recording data of the semiconductor substrate in a recording device (not shown), and the copper plating unit 70 is used.
It is also used to judge 2 abnormalities. After the film thickness is measured, the first robot 703 transfers the semiconductor substrate W to the reversing machine 705 and reverses it (the surface on which the copper plating film is formed faces down). Polishing by the first polishing device 710 and the second polishing device 711 includes a series mode and a parallel mode. The series mode polishing will be described below.

The series mode polishing is polishing in which the primary polishing is performed by the polishing device 710 and the secondary polishing is performed by the polishing device 711. The second robot 708 picks up the semiconductor substrate W on the reversing device 705, and places the semiconductor substrate W on the pusher 710-5 of the polishing device 710. The top ring 710-2 adsorbs the semiconductor substrate W on the pusher 710-5, abuts and presses the copper plating film formation surface of the semiconductor substrate W against the polishing surface of the polishing table 710-1 to perform the primary polishing. In the primary polishing, the copper plating film is basically polished. The polishing surface of the polishing table 710-1 is
It is made of foamed polyurethane such as IC1000, or one in which abrasive grains are fixed or impregnated. The copper plating film is polished by the relative movement between the polishing surface and the semiconductor substrate W.

After completion of polishing the copper plating film, the top ring 7
At 10-2, the semiconductor substrate W is returned onto the pusher 710-5. The second robot 708 picks up the semiconductor substrate W and puts it in the first cleaning machine 709. At this time, pusher 7
There is a case where a chemical solution is sprayed on the front surface and the back surface of the semiconductor substrate W on 10-5 to remove particles or make them difficult to stick.

After the cleaning is completed in the first cleaning machine 709, the semiconductor substrate W is picked up by the second robot 708, and the semiconductor substrate W is placed on the pusher 711-5 of the second polishing device 711. The top ring 711-2 adsorbs the semiconductor substrate W on the pusher 711-5,
The surface on which the barrier layer is formed is brought into contact with and pressed against the polishing surface of the polishing table 711-1 to perform secondary polishing. In this secondary polishing, the barrier layer is polished. However, in some cases, the copper film and oxide film remaining after the above primary polishing are also polished.

The polishing surface of the polishing table 711-1 is IC
It is made of foamed polyurethane such as 1000, or one in which abrasive grains are fixed or impregnated, and is polished by relative movement between the polishing surface and the semiconductor substrate W. At this time, silica, alumina, ceria, or the like is used for the abrasive grains or the slurry. The chemical solution is adjusted depending on the type of film to be polished.

The detection of the end point of the secondary polishing is carried out by measuring the film thickness of the barrier layer using an optical film thickness measuring device and detecting that the film thickness has become 0 or the surface of the insulating film made of SiO _2. To do. Further, as the film thickness measuring device 711-4 provided in the vicinity of the polishing table 711-1, a film thickness measuring device with an image processing function is used to measure the oxide film and leave it as a processing record of the semiconductor substrate W or 2 It is determined whether or not the semiconductor substrate W after the next polishing can be transferred to the next step. Further, if the secondary polishing end point has not been reached, re-polishing is performed, and if polishing is performed beyond the specified value due to some abnormality, semiconductor substrate processing is performed so that the next polishing is not performed so that defective products are not increased. Stop the device.

After completion of the secondary polishing, the top ring 711-2
Then, the semiconductor substrate W is moved to the pusher 711-5. The semiconductor substrate W on the pusher 711-5 is picked up by the second robot 708. At this time, pusher 711-
In some cases, the chemical solution may be sprayed onto the front surface and the back surface of the semiconductor substrate W to remove particles or make it hard to stick.

The second robot 708 carries the semiconductor substrate W into the second cleaning machine 707 and cleans it. Second washing machine 70
The configuration of 7 is also the same as that of the first cleaning machine 709. The surface of the semiconductor substrate W is scrub-cleaned with a PVA sponge roll using a cleaning liquid obtained by adding a surfactant, a chelating agent, and a pH adjusting agent to pure water, mainly for removing particles. On the back surface of the semiconductor substrate W, from the nozzle to the DHF
Etc., a strong chemical solution is ejected to etch the diffused copper, or if there is no problem of diffusion, scrub cleaning with a PVA sponge roll is performed using the same chemical solution as the surface.

After the cleaning is completed, the semiconductor substrate W is picked up by the second robot 708, transferred to the reversing machine 706, and reversed by the reversing machine 706. The inverted semiconductor substrate W is picked up by the first robot 703 and placed in the third cleaning machine 704. In the third cleaning machine 704, the surface of the semiconductor substrate W is cleaned by jetting megasonic water excited by ultrasonic vibration. At that time, deionized water is mixed with a surfactant, a chelating agent, p
The surface of the semiconductor substrate W may be washed with a known pencil-type sponge using a washing liquid containing an H adjusting agent. afterwards,
The semiconductor substrate W is dried by spin drying. When the film thickness is measured by the film thickness measuring device 711-4 provided in the vicinity of the polishing table 711-1 as described above, the film is directly stored in the cassette mounted on the unload port of the loading / unloading unit 701.

FIG. 22 is a diagram showing a planar structure of another semiconductor substrate processing apparatus. FIG. 21 of this semiconductor substrate processing apparatus
21 is different from the semiconductor substrate processing apparatus shown in FIG. 21 in that instead of the copper plating unit 702 shown in FIG.
This is the point where 50 is provided. The cassette 701-1 containing the semiconductor substrate W on which the copper film is formed is placed on the load / unload unit 701. The semiconductor substrate W is a cassette 701.
−1, and is transported to the first polishing device 710 or the second polishing device 711, where the surface of the copper film is polished. After completion of this polishing, the semiconductor substrate W
Are conveyed to the first cleaning machine 709 and cleaned.

The semiconductor substrate W cleaned by the first cleaning machine 709 is conveyed to the lid plating unit 750, where a protective film is formed on the surface of the copper plating film, whereby the copper plating film is oxidized in the atmosphere. Is prevented. The lid-plated semiconductor substrate W is transferred from the lid plating unit 750 to the second cleaning machine 707 by the second robot 708, where it is washed with pure water or deionized water. The semiconductor substrate W after the cleaning is returned to the cassette 701-1 placed on the load / unload unit 701.

FIG. 23 is a diagram showing a planar structure of still another semiconductor substrate processing apparatus. This semiconductor substrate processing apparatus is different from the semiconductor substrate processing apparatus shown in FIG. 22 in that the annealing unit 75 is used instead of the first cleaning machine 709 shown in FIG.
This is the point where 1 is provided. As described above, the semiconductor substrate W polished by the first polishing apparatus 710 or the second polishing apparatus 711 and cleaned by the second cleaning machine 707.
Is transported to the lid plating unit 750, where the surface of the copper plating film is subjected to lid plating. The lid-plated semiconductor substrate W is transferred from the lid plating unit 750 to the third cleaning machine 704 by the first robot 703, and is cleaned there.

The semiconductor substrate W cleaned by the first cleaning machine 709 is transferred to the annealing unit 751 and annealed therein. As a result, the copper plating film is alloyed to improve the electron migration resistance of the copper plating film. The annealed semiconductor substrate W is conveyed from the annealing unit 751 to the second cleaning machine 707, where it is cleaned with pure water or deionized water. The semiconductor substrate W after the cleaning is returned to the cassette 701-1 placed on the load / unload unit 701.

FIG. 24 is a diagram showing another planar arrangement configuration of the substrate processing apparatus. In FIG. 24, the same reference numerals as those in FIG. 21 denote the same or corresponding parts. This substrate polishing apparatus is arranged so as to approach the first polishing apparatus 710 and the second polishing apparatus 711 and to pusher indexer 72.
5, the third cleaning machine 704 and the copper plating unit 70 are arranged.
2, substrate mounting tables 721 and 722 are arranged respectively, robots 723 are arranged near the first cleaning machine 709 and the third cleaning machine 704, and a robot 724 is arranged near the second cleaning machine 707 and the copper plating unit 702. Further, a dry state film thickness measuring device 713 is arranged in the vicinity of the load / unload unit 701 and the first robot 703.

In the substrate processing apparatus having the above structure, the first robot 703 takes out the semiconductor substrate W from the cassette 701-1 mounted on the load port of the loading / unloading section 701, and measures the dry film thickness measuring machine 713. After the film thicknesses of the barrier layer and the seed layer are measured with, the semiconductor substrate W is placed on the substrate platform 721. When the dry film thickness measuring instrument 713 is provided in the hand of the first robot 703, the film thickness is measured there and placed on the substrate platform 721. The second robot 723 transfers the semiconductor substrate W on the substrate platform 721 to the copper plating unit 702 and forms a copper plating film. After the copper plating film is formed, the film thickness of the copper plating film is measured by a film thickness measuring device before and after plating 712. Then, the second robot 723 transfers the semiconductor substrate W to the pusher indexer 725 and mounts it thereon.

[Series Mode] In the series mode,
The top ring head 710-2 adsorbs the semiconductor substrate W on the pusher indexer 725, and the polishing table 71
The semiconductor substrate W is transferred to 0-1 and the semiconductor substrate W is pressed against the polishing surface on the polishing table 710-1 to perform polishing. The end point of polishing is detected by the same method as described above, and the semiconductor substrate W after polishing is finished.
Is transferred to and mounted on the pusher indexer 725 by the top ring head 710-2. Second robot 723
Then, the semiconductor substrate W is taken out, carried into the first cleaning machine 709 and cleaned, and subsequently transferred to the pusher indexer 725 and mounted.

The top ring head 711-2 adsorbs the semiconductor substrate W on the pusher indexer 725, transfers it to the polishing table 711-1, and presses the semiconductor substrate W against the polishing surface to perform polishing. The end point of polishing is detected by the same method as described above, and the semiconductor substrate W after completion of polishing is pushed by the top ring head 711-2 by the pusher indexer 72.
It is transferred to 5 and mounted. The third robot 724 picks up the semiconductor substrate W, measures the film thickness with the film thickness measuring machine 726, and then carries it into the second cleaning machine 707 and cleans it. Then the third
It is carried into the cleaning machine 704, where it is cleaned and then dried by spin dry, and then the semiconductor substrate W is picked up by the third robot 724 and placed on the substrate platform 722.

[Parallel Mode] In the parallel mode,
The top ring head 710-2 or 711-2 adsorbs the semiconductor substrate W on the pusher indexer 725, transfers it to the polishing table 710-1 or 711-1, and the polishing surface on the polishing table 710-1 or 711-1. Then, the semiconductor substrate W is pressed and polished. After the film thickness is measured, the semiconductor substrate W is picked up by the third robot 724 and placed on the substrate platform 722. The first robot 703 transfers the semiconductor substrate W on the substrate platform 722 to the dry film thickness measuring machine 713, measures the film thickness, and then returns it to the cassette 701-1 of the loading / unloading unit 701.

FIG. 25 is a diagram showing another planar arrangement configuration of the substrate processing apparatus. This substrate processing apparatus is a substrate processing apparatus that forms a seed layer and a copper plating film on a semiconductor substrate W on which a seed layer is not formed and then polishes the circuit wiring to form circuit wiring. In this substrate polishing apparatus, a pusher indexer 725 is arranged close to the first polishing apparatus 710 and the second polishing apparatus 711, and the substrate mounting table 721 and the seed layer deposition unit 727 are provided in the vicinity of the second cleaning machine 707 and the seed layer deposition unit 727, respectively. 722 is disposed, and the seed layer deposition unit 72 is disposed.
7 and the robot 723 approaching the copper plating unit 702
The robot 724 in the vicinity of the first cleaning machine 709 and the second cleaning machine 707, and the dry film thickness measuring machine 7 in the vicinity of the loading / unloading section 701 and the first robot 703.
13 are arranged.

The cassette 70 placed on the load port of the load / unload unit 701 by the first robot 703.
The semiconductor substrate W on which the barrier layer is formed is taken out from 1-1, and is placed on the substrate platform 721. Next, the second robot 723 uses the seed layer deposition unit 72 for the semiconductor substrate W.
It is conveyed to 7 and a seed layer is formed into a film. The seed layer is formed by electroless plating. The second robot 723 measures the film thickness measuring device 71 before and after plating the semiconductor substrate on which the seed layer is formed.
At 2, measure the thickness of the seed layer. After the film thickness is measured, it is carried into the copper plating unit 702 to form a copper plating film.

After forming the copper plating film, the film thickness is measured,
Transfer to pusher indexer 725. The top ring 710-2 or 711-2 adsorbs the semiconductor substrate W on the pusher indexer 725, and the polishing table 71
Transfer to 0-1 or 711-1 and polish. After polishing, the top ring 710-2 or 711-2 transfers the semiconductor substrate W to the film thickness measuring device 710-4 or 711-4, measures the film thickness, and transfers the semiconductor substrate W to the pusher indexer 725 for mounting.

Next, the third robot 724 picks up the semiconductor substrate W from the pusher indexer 725,
It is carried into the washing machine 709. The third robot 724 is the first
Picking up the cleaned semiconductor substrate W from the cleaning machine 709,
The semiconductor substrate that has been carried into the second cleaning machine 707, washed and dried is placed on the substrate platform 722. Next, the first robot 703 picks up the semiconductor substrate W, measures the film thickness with the dry film thickness measuring machine 713, and places the cassette 701-1 mounted on the unload port of the load / unload unit 701.
To store.

Also in the substrate processing apparatus shown in FIG. 25, a barrier layer, a seed layer and a copper plating film are formed on the semiconductor substrate W in which the contact holes or grooves of the circuit pattern are formed and polished to form the circuit wiring. can do.

The cassette 701-1 containing the semiconductor substrate W before the formation of the barrier layer is placed on the load port of the load / unload unit 701. Then, the first robot 703
Then, the semiconductor substrate W is taken out from the cassette 701-1 placed on the load port of the load / unload unit 701 and placed on the substrate platform 721. Next, the second robot 723 forms the semiconductor substrate W on the seed layer deposition unit 727.
And the barrier layer and the seed layer are formed. The barrier layer and the seed layer are formed by electroless plating. The second robot 723 measures the film thickness of the barrier layer and the seed layer formed on the semiconductor substrate W with the film thickness measuring device before and after plating 712. After the film thickness is measured, it is carried into the copper plating unit 702 to form a copper plating film.

FIG. 26 is a diagram showing another planar arrangement configuration of the substrate processing apparatus. This substrate processing apparatus includes a barrier layer film forming unit 811, a seed layer film forming unit 812, a plating unit 813, an annealing unit 814, a first cleaning unit 815, a bevel / back surface cleaning unit 816, a lid plating unit 817, and a second cleaning unit. 818, first aligner / film thickness measuring instrument 841, second aligner / film thickness measuring instrument 842, first substrate reversing machine 843, second substrate reversing machine 84
4, substrate temporary placing table 845, third film thickness measuring device 846, load / unload unit 820, first polishing device 82
1, second polishing device 822, first robot 83
In this configuration, the first robot 2, the second robot 832, the third robot 833, and the fourth robot 834 are arranged. The film thickness measuring devices 841, 842 and 846 are units, and can be replaced because they have the same size as the front dimension of other units (units for plating, cleaning, annealing, etc.).

In this example, the barrier layer deposition unit 811
Is an electroless Ru plating device and a seed layer film forming unit 81.
2 is an electroless copper plating device, and the plating unit 813 is
An electrolytic plating apparatus can be used.

FIG. 27 is a flow chart showing the flow of each step in this substrate processing apparatus. Each process in this apparatus will be described according to this flowchart. First, the semiconductor substrate taken out from the cassette 820a placed on the load / unload unit 820 by the first robot 831 is placed inside the first aligner / film thickness measuring unit 841 with the surface to be plated facing up. Here, in order to determine the reference point of the position for measuring the film thickness, after performing notch alignment for film thickness measurement, film thickness data of the semiconductor substrate before the copper film formation is obtained.

Next, the semiconductor substrate is the first robot 831.
Thus, the film is conveyed to the barrier layer film forming unit 811. The barrier layer forming unit 811 is a device for forming a barrier layer on a semiconductor substrate by electroless Ru plating, and forms Ru as a copper diffusion preventing film on an interlayer insulating film (eg, SiO ₂ ) of the semiconductor device. . The semiconductor substrate discharged through the washing and drying steps is conveyed to the first aligner / film thickness measuring unit 841 by the first robot 831 and the film thickness of the semiconductor substrate, that is, the film thickness of the barrier layer is measured.

The semiconductor substrate whose film thickness has been measured is carried into the seed layer forming unit 812 by the second robot 832, and the seed layer is formed on the barrier layer by electroless copper plating. The semiconductor substrate discharged through the cleaning and drying steps is transferred to the second aligner / film thickness measuring device 842 to determine the notch position before being transferred to the plating unit 813 which is the impregnation plating unit by the second robot 832. It is transferred and the notch for copper plating is aligned. Here, the film thickness of the semiconductor substrate before forming the copper film may be remeasured, if necessary.

The semiconductor substrate on which the notch alignment has been completed is carried to the plating unit 813 by the third robot 833 and is subjected to copper plating. The semiconductor substrate discharged through the cleaning and drying steps is conveyed by the third robot 833 to the bevel / back surface cleaning unit 816 in order to remove an unnecessary copper film (seed layer) at the end of the semiconductor substrate. In the bevel / back surface cleaning unit 816, the bevel is etched for a preset time, and the copper attached to the back surface of the semiconductor substrate is cleaned with a chemical solution such as hydrofluoric acid. At this time, before transporting to the bevel / back surface cleaning unit 816,
The film thickness of the semiconductor substrate is measured by the second aligner / film thickness measuring device 842 to obtain the value of the copper film thickness formed by plating, and the bevel etching time is arbitrarily changed according to the result. You may etch. The region to be etched by bevel etching is a region where the circuit is not formed in the peripheral portion of the substrate or a region where the circuit is not finally used as a chip. This area includes the bevel portion.

Cleaning with the bevel / back surface cleaning unit 816,
The semiconductor substrate discharged through the drying process is conveyed to the substrate reversing machine 843 by the third robot 833, reversed by the substrate reversing machine 843, and the surface to be plated is turned downward, and then the fourth robot 834. It is put into the annealing unit 814 to stabilize the wiring part. The second aligner / film thickness measuring unit 84 before and / or after the annealing treatment
Then, the film thickness of the copper film formed on the semiconductor substrate is measured. Then, the semiconductor substrate is carried into the first polishing apparatus 821 by the fourth robot 834, and the copper layer and the seed layer of the semiconductor substrate are polished.

At this time, although desired abrasive grains are used, in order to prevent dishing and to obtain flatness of the surface,
Fixed abrasive grains can also be used. After the completion of the first polishing, the semiconductor substrate is transferred to the first cleaning unit 815 by the fourth robot 834 and cleaned. This wash is
This is scrub cleaning in which a roll having a length substantially the same as the diameter of the semiconductor substrate is arranged on the front surface and the back surface of the semiconductor substrate, and the semiconductor substrate and the roll are rotated and purified water or deionized water is caused to flow.

After the completion of the first cleaning, the semiconductor substrate is carried into the second polishing device 822 by the fourth robot 834, and the barrier layer on the semiconductor substrate is polished. On this occasion,
Although desired abrasive grains or the like are used, fixed abrasive grains may be used to prevent dishing and to obtain flatness of the surface. After the second polishing is completed, the semiconductor substrate is again removed by the fourth robot 834 from the first cleaning unit 815.
It is transported to and scrubbed. After the cleaning is completed, the semiconductor substrate is transferred to the second substrate reversing machine 84 by the fourth robot 834.
4 and then inverted, the surface to be plated is directed upward, and further the third robot 833 causes the temporary substrate holder 845.
Placed in.

The semiconductor substrate is transferred from the temporary substrate holder 845 to the lid plating unit 817 by the second robot 832, and nickel-boron plating is performed on the copper surface for the purpose of preventing copper from being oxidized by the atmosphere. The semiconductor substrate plated with the lid is covered by the second robot 832 in the lid plating unit 81.
It is carried into the third film thickness measuring device 846 from 7 and the copper film thickness is measured. Then, the semiconductor substrate is carried into the second cleaning unit 818 by the first robot 831 and cleaned with pure water or deionized water. The semiconductor substrate after cleaning is loaded and unloaded by the robot 1 in the platform 1
It is returned to the inside of the cassette 820a placed on the 20. Aligner and film thickness measuring device 841 and aligner and film thickness measuring device 84
2 measures the film thickness and the positioning of the substrate notch.

The bevel / back surface cleaning unit 816 can perform edge (bevel) copper etching and back surface cleaning at the same time, and can suppress the growth of a copper natural oxide film on a circuit forming portion on the substrate surface. FIG. 28 shows a schematic view of the bevel / back surface cleaning unit 816. As shown in FIG. 28, the bevel / back surface cleaning unit 816 is located inside the bottomed cylindrical waterproof cover 920, and the substrate W is face-up at a plurality of positions along the circumferential direction of the spin chuck by spin chucking. A substrate holding portion 922 that is held horizontally by 921 and is rotated at a high speed, and a center nozzle 92 that is disposed above substantially the central portion on the front surface side of the substrate W held by the substrate holding portion 922.
4 and an edge nozzle 926 arranged above the peripheral edge of the substrate W. The center nozzle 924 and the edge nozzle 926 are arranged facing downward, respectively. Further, a back nozzle 928 is arranged facing upward and is positioned below a substantially central portion on the back surface side of the substrate W. The edge nozzle 926 is configured to be movable in the diameter direction and the height direction of the substrate W.

The moving width L of the edge nozzle 926 can be arbitrarily positioned from the outer peripheral end surface of the substrate toward the central portion, and is adjusted according to the size of the substrate W and the purpose of use.
Enter the set value. Usually, the edge cut width C is set in the range of 2 mm to 5 mm, and if the amount of the liquid flowing from the back surface to the front surface is equal to or higher than the number of rotations, the copper film within the set cut width C is removed. be able to.

Next, a cleaning method by this cleaning device will be described. First, with the substrate held horizontally by the substrate holding unit 922 via the spin chuck 921, the semiconductor substrate W is horizontally rotated integrally with the substrate holding unit 922. In this state, the acid solution is supplied from the center nozzle 924 to the central portion on the front surface side of the substrate W. The acid solution may be a non-oxidizing acid, for example, hydrofluoric acid, hydrochloric acid, sulfuric acid, citric acid, oxalic acid, or the like. On the other hand, the oxidant solution is continuously or intermittently supplied from the edge nozzle 926 to the peripheral portion of the substrate W. As the oxidant solution, one of ozone water, hydrogen peroxide water, nitric acid water, sodium hypochlorite water, or the like is used, or a combination thereof is used.

As a result, in the region of the edge cut width C at the peripheral edge of the semiconductor substrate W, the copper film and the like formed on the upper surface and the end surface are rapidly oxidized by the oxidizer solution and simultaneously supplied from the center nozzle 924 to the substrate. Is removed by dissolution with an acid solution that spreads over the entire surface of the. Thus, by mixing the acid solution and the oxidizer solution at the peripheral edge of the substrate, a sharper etching profile can be obtained as compared with the case where the mixed water of them is supplied in advance from the nozzle. At this time, the copper etching rate is determined by their concentrations. Further, when a natural oxide film of copper is formed on the circuit formation portion on the surface of the substrate, this natural oxide is immediately removed by an acid solution that spreads over the entire surface of the substrate as the substrate rotates, and grows. There is no such thing. The center nozzle 924
After stopping the supply of the acid solution from the edge nozzle 926
By stopping the supply of the oxidant solution from, the silicon exposed on the surface can be oxidized and the adhesion of copper can be suppressed.

On the other hand, the back nozzle 928 supplies the oxidizing agent solution and the silicon oxide film etching agent simultaneously or alternately to the central portion of the back surface of the substrate. As a result, the copper or the like that is metallically attached to the back surface of the semiconductor substrate W can be removed together with the silicon of the substrate by oxidizing with the oxidizing agent solution and etching with the silicon oxide film etching agent. It should be noted that this oxidant solution is preferably the same as the oxidant solution supplied to the surface in order to reduce the kinds of chemicals. Further, hydrofluoric acid can be used as the silicon oxide film etching agent, and the types of chemicals can be reduced by using hydrofluoric acid for the acid solution on the surface side of the substrate. Thus, if the supply of the oxidant is stopped first, a hydrophobic surface is obtained, and if the solution of the etchant is stopped first, a saturated surface (hydrophilic surface) is obtained, and the back surface is adjusted according to the demand of the subsequent process. You can also

In this way, the acid solution, that is, the etching solution is supplied to the substrate to remove the metal ions remaining on the surface of the substrate W, and then pure water is supplied to replace the pure water to remove the etching solution. Then, spin drying is performed. In this way, the edge cut width C of the peripheral portion of the semiconductor substrate surface is
This process can be completed within 80 seconds, for example, by simultaneously removing the copper film inside and removing the copper contamination on the back surface. In addition, the edge cut width of the edge is arbitrary (2 mm to 5 mm
However, the time required for etching does not depend on the cut width.

Performing the annealing treatment before the CMP step after plating has a good effect on the subsequent CMP treatment and the electrical characteristics of the wiring. When the surface of a wide wiring (unit of several μm) was observed after the CMP process without annealing, many defects such as microvoids were found, and the electrical resistance of the entire wiring was increased. Increase was improved. Since no void was found in the thin wiring without annealing, it is considered that the degree of grain growth is involved. In other words, grain growth does not occur easily with thin wiring, but with ultra-fine wiring that is invisible to the SEM (scanning electron microscope) in the plating film in the process of grain growth accompanying annealing treatment with grain growth in wide wiring. It can be inferred that the pores gathered and moved upwards, resulting in the formation of microvoid depressions in the upper portion of the wiring.
As the annealing conditions of the annealing unit, hydrogen is added to the gas atmosphere (2% or less), and the temperature is 300 to 400 ° C.
The above effect was obtained in about 1 to 5 minutes.

29 and 30 show the annealing unit 8
14 is shown. This annealing unit 814
Is located inside a chamber 1002 having a gate 1000 for loading and unloading the semiconductor substrate W.
Is heated to, for example, 400 ° C. hot plate 1004
Then, cool plates 1006 for cooling the semiconductor substrate W by flowing cooling water, for example, are arranged above and below. In addition, a plurality of elevating pins 1008 that penetrate the inside of the cool plate 1006 and extend in the up-down direction and that mount and hold the semiconductor substrate W are vertically arranged. Further, a gas introducing pipe 1010 for introducing an oxidation preventing gas between the semiconductor substrate W and the hot plate 1008 during annealing, and a gas introduced through the gas introducing pipe 1010 and flowing between the semiconductor substrate W and the hot plate 1004. A gas exhaust pipe 1012 for exhausting the gas is arranged at a position facing each other with the hot plate 1004 interposed therebetween.

The gas introducing pipe 1010 has a filter 1 inside.
N flowing in the N ₂ gas introduction passage 1016 having 014a
₂ gas and, mixer 1020 and a _{H 2} gas flowing through the _{H 2} gas introduction passage 1018 having a filter 1014b therein
Are connected to a mixed gas introducing passage 1022 through which the gases mixed by the mixer 1020 flow.

As a result, the semiconductor substrate W carried into the chamber 1002 through the gate 1000 is held by the lift pins 1008, and the lift pins 1008 are held by the lift pins 1008.
08 holding semiconductor substrate W and hot plate 1004
Is increased until the distance between and becomes, for example, about 0.1 to 1.0 mm. In this state, the semiconductor substrate W is heated to, for example, 400 ° C. via the hot plate 1004, and at the same time, an oxidation preventing gas is introduced from the gas introducing pipe 1010 so that the semiconductor substrate W and the hot plate 1004 are separated from each other. Is exhausted from the gas exhaust pipe 1012. As a result, the semiconductor substrate W is annealed while preventing oxidation, and this annealing is continued for, for example, several tens of seconds to 60 seconds to complete the annealing. The substrate heating temperature is selected to be 100 to 600 ° C.

After the annealing is completed, the elevating pins 1008 are lowered until the distance between the semiconductor substrate W held by the elevating pins 1008 and the cool plate 1006 becomes, for example, about 0 to 0.5 mm. In this state, cool plate 100
By introducing cooling water into the semiconductor substrate 6, the semiconductor substrate is cooled until the temperature of the semiconductor substrate W becomes 100 ° C. or lower, for example, for about 10 to 60 seconds, and the semiconductor substrate after completion of this cooling is transported to the next step. . In this example, as the oxidation preventing gas, the mixed gas in which the N ₂ gas and the H ₂ gas of several% are mixed is allowed to flow, but only the N ₂ gas may be allowed to flow.

[0122]

As described above, according to the present invention,
During non-plating, uniformly heat the stage with the plating solution itself held in the plating tank to uniformly preheat the material to be treated held on this stage, thereby growing a plating film with a uniform thickness. You can Further, by preheating the substrate with the plating solution itself in this way, a holder for holding and heating the substrate is not required, the structure is simplified, and the substrate is prevented from being dried, and the throughput is improved. It can be raised easily.

[Brief description of drawings]

FIG. 1 is a diagram showing an example of forming a copper wiring by copper plating in the order of steps.

FIG. 2 is a vertical sectional front view of the electroless plating apparatus according to the first embodiment of the present invention.

FIG. 3 is a vertical sectional front view of an electroless plating apparatus according to a second embodiment of the present invention.

FIG. 4 is a vertical sectional front view of an electroless plating apparatus according to a third embodiment of the present invention.

FIG. 5 is a cross-sectional plan view of an electroless plating apparatus according to a third embodiment of the present invention.

FIG. 6 is a vertical sectional front view of an electroless plating apparatus according to a fourth embodiment of the present invention.

FIG. 7 is a back view of a substrate stage according to a fourth embodiment of the present invention.

FIG. 8 is a vertical cross-sectional front view of an electroless plating apparatus according to another fourth embodiment of the present invention.

FIG. 9 is a cross-sectional plan view of a substrate stage according to another fourth embodiment of the present invention.

FIG. 10 is a vertical sectional front view of an electroless plating apparatus according to a fifth embodiment of the present invention.

FIG. 11 is a vertical sectional front view of an electroless plating apparatus according to a sixth embodiment of the present invention.

12 is a plan layout view showing a plating apparatus including the electroless plating apparatus shown in FIG.

13 is a plan layout view showing another plating apparatus including the electroless plating apparatus shown in FIG.

FIG. 14 is a plan layout view showing the substrate processing apparatus.

FIG. 15 is a diagram showing the flow of airflow in the substrate processing apparatus shown in FIG.

16 is a diagram showing the flow of air between areas of the substrate processing apparatus shown in FIG.

FIG. 17 is an external view showing an example in which the substrate processing apparatus shown in FIG. 13 is arranged in a clean room.

FIG. 18 is a plan view showing another example of the substrate processing apparatus.

FIG. 19 is a plan layout view showing still another example of the substrate processing apparatus.

FIG. 20 is a plan layout view showing still another example of the substrate processing apparatus.

FIG. 21 is a plan layout view showing still another example of the substrate processing apparatus.

FIG. 22 is a plan layout view showing still another example of the substrate processing apparatus.

FIG. 23 is a plan layout view showing still another example of the substrate processing apparatus.

FIG. 24 is a plan layout view showing still another example of the substrate processing apparatus.

FIG. 25 is a plan layout view showing still another example of the substrate processing apparatus.

FIG. 26 is a plan layout view showing still another example of the substrate processing apparatus.

27 is a flowchart showing the flow of each step in the substrate treatment apparatus shown in FIG.

FIG. 28 is a schematic view showing a bevel / back surface cleaning unit.

FIG. 29 is a vertical sectional front view showing an example of an annealing unit.

30 is a plan sectional view of FIG. 29. FIG.

[Explanation of symbols]

10, 10a, 10b, 10c, 10d, 10e, 10
f Electroless plating device 12 Plating solution 14, 14a Plating tank 16 Substrate stage 17 Support shaft 18 Sealing material 20, 46a, 46b, 46c, 50 Plating solution introducing passage 22a, 22b Liquid discharging passage 26 Plating solution circulating tank 30 Plating solution supply Pipe 32 Plating liquid return pipe 36 Plating liquid relief pipes 38a, 38b Open / close valve 40 Control unit 42 Liquid level adjusting unit 44 Inert gas introduction unit 46 Blade 48 Plating liquid flow unit 50a Plating liquid jet 52 Rotating body 52a Plating liquid flow Road

   ─────────────────────────────────────────────────── ─── Continued front page    (72) Inventor Kenichi Abe             11-1 Haneda Asahi-cho, Ota-ku, Tokyo Co., Ltd.             Inside the EBARA CORPORATION F-term (reference) 4K022 AA05 BA04 BA06 BA14 BA16                       BA24 BA33 CA03 CA06 DA03                       DB15 DB24

Claims (9)

[Claims] 1. A plating bath which is opened upward and holds a heated plating solution; and a treatment target material, which is disposed inside the plating treatment tank and seals the back surface of the treatment target material with the surface to be plated facing upward. The stage to be held and the liquid level of the plating solution in the plating bath is set to a level slightly lower than the surface of the stage during non-plating, and the level of the material to be treated held on the stage during plating is immersed in the plating solution. A plating apparatus having a liquid level adjusting unit for adjusting each of them. 2. The plating apparatus according to claim 1, wherein the stage is configured to hold the material to be processed in a horizontal or inclined state. 3. The plating apparatus according to claim 1, further comprising a swirl flow forming section for forming a swirl flow in the plating solution in the plating tank by the plating solution introduced into the plating tank. . 4. The plating apparatus according to claim 1, further comprising a stage rotating unit that rotatably supports the stage and rotates the stage with a plating solution introduced into a plating tank. 5. The plating apparatus according to claim 1, wherein a plurality of the stages are arranged in parallel inside the plating tank. 6. The plating bath according to claim 1, wherein a plurality of the plating baths are provided and are stacked in multiple layers, and the plating bath is supplied from a single plating bath circulating bath. The plating apparatus described in Crab. 7. The plating tank is held upward with the stage placed in a plating tank holding a heated plating solution, with the surface to be plated of the material to be treated facing upward, and the plating tank when not plating. The surface level of the plating solution inside is kept slightly lower than the surface of the stage, the stage is heated with the plating solution, and the material to be treated held on the stage is immersed in the plating solution during plating. Plating method. 8. The plating method according to claim 7, wherein a swirling flow is formed in the plating solution in the plating tank by the plating solution introduced into the plating tank. 9. The plating method according to claim 7, wherein the stage holding the material to be treated is rotated by a plating solution introduced into a plating tank.