JP2003212941A - Dielectric tangent-lowering method and low dielectric tangent resin composition and electric part using the same - Google Patents

Dielectric tangent-lowering method and low dielectric tangent resin composition and electric part using the same

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Publication number
JP2003212941A
JP2003212941A JP2002011102A JP2002011102A JP2003212941A JP 2003212941 A JP2003212941 A JP 2003212941A JP 2002011102 A JP2002011102 A JP 2002011102A JP 2002011102 A JP2002011102 A JP 2002011102A JP 2003212941 A JP2003212941 A JP 2003212941A
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JP
Japan
Prior art keywords
dielectric loss
loss tangent
resin
curing
ghz
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2002011102A
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Japanese (ja)
Other versions
JP3938500B2 (en
Inventor
Satoru Amo
天羽  悟
Shinji Yamada
真治 山田
Takao Ishikawa
敬郎 石川
Akio Takahashi
昭雄 高橋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
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Hitachi Ltd
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Publication of JP3938500B2 publication Critical patent/JP3938500B2/en
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Expired - Fee Related legal-status Critical Current

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Abstract

<P>PROBLEM TO BE SOLVED: To provide a dielectric tangent-lowering method which can reproduce a stable dielectric constant and a dielectric tangent even when curing in an open system or a vacuum system, a resin composition, a low dielectric tangent resin composition and electric parts using the same. <P>SOLUTION: To a curable resin (A) wherein a dielectric tangent at 10 GHz of a cured material obtained by being cured at 180°C for 100 min is not less than 0.002, a curing component (B) wherein vapor pressure at 52°C is not more than 1 hPa and a dielectric tangent at 10 GHz of a cured material obtained by being cured at 180°C for 100 min is less than 0.002 is added. <P>COPYRIGHT: (C)2003,JPO

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明は高周波信号に対応す
るための誘電損失の小さな電気部品ならびにそれらを製
造するために用いる樹脂組成物及び樹脂組成物の低誘電
正接化方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electric component having a small dielectric loss for dealing with a high frequency signal, a resin composition used for manufacturing them, and a method for reducing a dielectric loss tangent of the resin composition.

【0002】[0002]

【従来の技術】近年、PHS、携帯電話等の情報通信機
器の信号帯域、コンピューターのCPUクロックタイム
はGHz帯に達し、高周波数化が進行している。電気信
号の誘電損失は、回路を形成する絶縁体の比誘電率の平
方根と誘電正接、使用される信号の周波数の積に比例す
る。そのため、高周波信号ほど誘電損失が大きくなる。
誘電損失は電気信号を減衰させて信号の信頼性を損なう
ので、これを抑制するために絶縁体には誘電率、誘電正
接の小さな材料を選定する必要がある。絶縁体の低誘電
率、低誘電正接化には分子構造中の極性基の除去が有効
であり、従来、主にフッ素樹脂が低誘電正接樹脂として
使用されてきた。これに対して有機溶媒に可溶な熱硬化
性低誘電正接樹脂として硬化性ポリオレフィン、シアネ
ートエステル系樹脂、硬化性ポリフェニレンオキサイ
ド、アリル変性ポリフェニレンエーテル、ジビニルベン
ゼンまたはジビニルナフタレンで変性したポリエーテル
イミド等種々の提案がなされている。
2. Description of the Related Art In recent years, the signal band of information communication devices such as PHS and mobile phones and the CPU clock time of computers have reached the GHz band, and higher frequencies have been in progress. The dielectric loss of an electrical signal is proportional to the product of the square root of the relative permittivity of the insulator forming the circuit, the dielectric loss tangent, and the frequency of the signal used. Therefore, the higher the frequency of the signal, the larger the dielectric loss.
Since the dielectric loss attenuates the electrical signal and impairs the reliability of the signal, it is necessary to select a material having a small dielectric constant and a small dielectric loss tangent for the insulator to suppress it. Removal of polar groups in the molecular structure is effective for achieving a low dielectric constant and a low dielectric loss tangent of an insulator, and conventionally, a fluorine resin has been mainly used as a low dielectric loss tangent resin. On the other hand, as thermosetting low dielectric loss tangent resins soluble in organic solvents, curable polyolefins, cyanate ester resins, curable polyphenylene oxides, allyl-modified polyphenylene ethers, divinylbenzene or divinylnaphthalene-modified polyetherimides, etc. Has been made.

【0003】例えば、特開平8−208856号公報記
載のポリブタジエン等のジエン系ポリマーをガラスクロ
スに含漬して過酸化物で硬化した例;特開平10−15
8337号公報に記載の如く、ノルボルネン系付加型重
合体にエポキシ基を導入し、硬化性を付与した環状ポリ
オレフィンの例;特開平11−124491号公報記載
の如く、シアネートエステル、ジエン系ポリマー、エポ
キシ樹脂を加熱してBステージ化した例;特開平9−1
18759号公報に記載のポリフェニレンオキサイド、
ジエン系ポリマー、トリアリルイソシアネートからなる
変性樹脂の例;特開平9−246429号公報に記載の
アリル化ポリフェニレンエーテル、トリアリルイソシア
ネート等からなる樹脂組成物の例;特開平5−1561
59号公報に記載のポリエーテルイミドと、スチレン、
ジビニルベンゼン又はジビニルナフタレンとをアロイ化
した例;特開平5−78552号公報に記載のジヒドロ
キシ化合物とクロロメチルスチレンからウイリアムソン
反応で合成した例えばヒドロキノンビス(ビニルベンジ
ル)エーテルとノボラックフェノール樹脂からなる樹脂
組成物の例など多数が挙げられる。前述の例の多くに
は、架橋剤又は架橋助剤としてジビニルベンゼンを含ん
でも良いとの記述がある。これは、ジビニルベンゼンが
構造中に極性基を有しておらず、その硬化物が低誘電
率、低誘電正接であること、および熱分解温度が350
℃以上と高いことに起因する。
For example, an example in which a diene polymer such as polybutadiene described in JP-A-8-208856 is soaked in glass cloth and cured with peroxide; JP-A-10-15
Examples of cyclic polyolefins in which an epoxy group is introduced into a norbornene-based addition type polymer to impart curability as described in JP-A-8337; cyanate ester, diene-based polymer, epoxy as described in JP-A No. 11-124491. Example of heating resin to B stage; JP-A-9-1
Polyphenylene oxide described in 18759.
Examples of modified resins composed of diene polymer and triallyl isocyanate; examples of resin compositions composed of allylated polyphenylene ether, triallyl isocyanate described in JP-A-9-246429; JP-A-5-1561
Polyetherimide described in JP-A-59, styrene,
Example of alloying divinylbenzene or divinylnaphthalene; resin composed of, for example, hydroquinone bis (vinylbenzyl) ether and novolac phenol resin synthesized by Williamson reaction from dihydroxy compound and chloromethylstyrene described in JP-A-5-78552 There are many examples such as compositions. Many of the above examples describe that divinylbenzene may be included as a cross-linking agent or co-agent. This is because divinylbenzene does not have a polar group in its structure, and its cured product has a low dielectric constant and low dielectric loss tangent, and a thermal decomposition temperature of 350.
This is due to the high temperature above ℃.

【0004】特開平5−78552号公報ではジビニル
ベンゼンに代わりヒドロキノンビス(ビニルベンジル)
エーテル等の多官能ビニルベンジルエーテル化合物を使
用している。ヒドロキノンビス(ビニルベンジル)エー
テルは不揮発性であり、ノボラックフェノール樹脂と共
に硬化することによって柔軟性の高い硬化物を与えるこ
とを明らかにしている。
In JP-A-5-78552, hydroquinone bis (vinylbenzyl) is used instead of divinylbenzene.
A polyfunctional vinyl benzyl ether compound such as ether is used. It has been shown that hydroquinone bis (vinylbenzyl) ether is non-volatile, and when cured together with a novolac phenolic resin, it gives a cured product with high flexibility.

【0005】このほか、ジビニルベンゼンの類似化合物
としては、スチレン基間をエチレン基で結合した1、2
−ビスビニルフェニルエタン(特開平9−208625
号公報)、Makromol.Chem.vol.18
7、23頁記載の側鎖にビニル基を有するジビニルベン
ゼンオリゴマー等が知られているが、これらの多官能ス
チレン化合物の硬化物の誘電率、誘電正接、硬化性に関
する検討はなされていなかった。更に該多官能スチレン
化合物と他の硬化性樹脂とのブレンドによる樹脂組成物
の低誘電正接化についても殆ど検討されていなかった。
In addition, as a compound similar to divinylbenzene, 1,2 in which styrene groups are bonded with an ethylene group is used.
-Bisvinylphenylethane (Japanese Patent Laid-Open No. 9-208625)
Gazette), Makromol. Chem. vol. 18
Although divinylbenzene oligomers having a vinyl group on the side chain described on pages 7 and 23 are known, no studies have been made on the dielectric constant, dielectric loss tangent, and curability of cured products of these polyfunctional styrene compounds. Further, little consideration has been given to lowering the dielectric loss tangent of a resin composition by blending the polyfunctional styrene compound with another curable resin.

【0006】尚、「難燃性基板およびプリプレグ」と題
する特開2000−187831号公報、更には「電力
増幅モジュール」と題する特開2001−267466
号公報には、有機樹脂材料としてポリビニルベンジルエ
ーテル化合物を使用する技術が開示されているが、エー
テル結合を含む材料の誘電特性は、エーテル基の影響に
より悪化する。
Incidentally, Japanese Patent Laid-Open No. 2000-187831 entitled "Flame Retardant Substrate and Prepreg", and Japanese Patent Laid-Open No. 2001-267466 entitled "Power Amplifier Module".
The publication discloses a technique of using a polyvinyl benzyl ether compound as an organic resin material, but the dielectric property of a material containing an ether bond is deteriorated by the influence of an ether group.

【0007】[0007]

【発明が解決しようとする課題】従来、低誘電正接樹脂
として使用されてきたフッ素樹脂に代わり、有機溶剤に
可溶で取扱いやすい熱硬化性低誘電正接樹脂が種々提案
されている。これらの熱硬化性低誘電正接樹脂の例では
誘電率、誘電正接が低く、硬化物の耐熱性が高いジビニ
ルベンゼンを架橋成分、または架橋助剤として添加する
ことが提案されている。しかし、ジビニルベンゼンの硬
化物が脆いことに起因してその添加量は低く押さえられ
ていた。そのため、ジビニルベンゼンを添加したことに
よる低誘電率化、低誘電正接化は、十分な効果を発揮し
ていなかった。また、ジビニルベンゼンは揮発性を有す
るため、真空系、開放系で硬化硬化した際にはジビニル
ベンゼンが揮発してしまい硬化物の誘電特性が安定しな
いという問題があった。
Various thermosetting low dielectric loss tangent resins which are soluble in an organic solvent and are easy to handle have been proposed in place of the fluororesin which has been used as a low dielectric loss tangent resin. In the examples of these thermosetting low dielectric loss tangent resins, it has been proposed to add divinylbenzene, which has a low dielectric constant and a low dielectric loss tangent and has a high heat resistance of the cured product, as a crosslinking component or a crosslinking aid. However, due to the brittleness of the cured product of divinylbenzene, the amount added was kept low. Therefore, the reduction of the dielectric constant and the reduction of the dielectric loss tangent due to the addition of divinylbenzene have not been sufficiently effective. Further, since divinylbenzene is volatile, there is a problem that when it is hardened and cured in a vacuum system or an open system, the divinylbenzene is volatilized and the dielectric properties of the cured product are not stable.

【0008】ジビニルベンゼンに代わる架橋成分として
不揮発性の多官能ビニルベンジルエーテル化合物を樹脂
組成物に添加する提案もあるが、多官能ビニルベンジル
エーテル化合物はエーテル結合を有するためジビニルベ
ンゼンほどの低誘電正接性は有しておらず、樹脂組成物
の低誘電正接化の能力はジビニルベンゼンには及ばな
い。ジビニルベンゼンに代わる好ましい架橋成分として
はスチレン基間をアルキレン基やアリーレン基で結合し
た全炭化水素の多官能スチレンが考えられるが、硬化性
樹脂とブレンドした際の誘電特性、硬化性、揮発性につ
いては十分な評価が実施されていなかった。
There is a proposal to add a non-volatile polyfunctional vinyl benzyl ether compound to the resin composition as a cross-linking component in place of divinyl benzene, but since the poly functional vinyl benzyl ether compound has an ether bond, it has a dielectric constant as low as that of divinyl benzene. Therefore, the resin composition does not have the ability to reduce the dielectric loss tangent of divinylbenzene. As a preferable cross-linking component instead of divinylbenzene, polyfunctional styrene of all hydrocarbons in which styrene groups are bonded by alkylene groups or arylene groups is considered, but regarding dielectric properties, curability, and volatility when blended with a curable resin. Has not been fully evaluated.

【0009】本発明の目的は、安定した誘電特性を再現
できる樹脂組成物の低誘電正接化方法、それを用いた低
誘電正接樹脂組成物、それを絶縁層として用いた電気部
品を提供することにある。
An object of the present invention is to provide a method for reducing the dielectric loss tangent of a resin composition capable of reproducing stable dielectric properties, a resin composition having a low dielectric loss tangent using the same, and an electric component using the same as an insulating layer. It is in.

【0010】[0010]

【課題を解決するための手段】本発明の要旨は、汎用の
硬化性樹脂(A)に、180℃、100分で硬化させて
得られる硬化物の10GHzでの誘電正接が0.002
未満である低誘電正接性と52℃における蒸気圧が1h
Pa以下の不揮発性とを兼ね備えた硬化成分(B)をブ
レンドすることにある。
Means for Solving the Problems The gist of the present invention is that a cured product obtained by curing a general-purpose curable resin (A) at 180 ° C. for 100 minutes has a dielectric loss tangent of 0.002 at 10 GHz.
Low dielectric loss tangent of less than 1 and vapor pressure at 52 ° C for 1h
It is to blend the curable component (B) having a non-volatile property of Pa or less.

【0011】本発明によれば、汎用の硬化性樹脂(A)
に、180℃、100分で硬化させて得られる硬化物の
10GHzでの誘電正接が0.002未満である低誘電
正接性と52℃における蒸気圧が1hPa以下の不揮発
性とを兼ね備えた硬化成分(B)をブレンドすることに
より、後述する実施例の記載からも明らかなように、硬
化時の硬化成分(B)の揮発に伴う誘電特性のばらつき
を抑制しつつ、硬化性樹脂組成物の低誘電正接化を図る
ことができる。
According to the present invention, a general-purpose curable resin (A) is used.
In addition, a cured component having a low dielectric loss tangent having a dielectric loss tangent of less than 0.002 at 10 GHz at 180 ° C. for 100 minutes and a nonvolatile property having a vapor pressure at 52 ° C. of 1 hPa or less. By blending (B), as is clear from the description of the examples described later, it is possible to suppress the variation in the dielectric properties due to the volatilization of the curing component (B) during curing and to reduce the amount of the curable resin composition. A dielectric loss tangent can be achieved.

【0012】前述の硬化成分(B)としては、アルキレ
ン、アリーレンのような炭化水素骨格を有する多官能ス
チレン化合物が好ましく、これによって硬化時にひび割
れのない低誘電率、低誘電正接な硬化物を安定して得る
ことができる。
As the above-mentioned curing component (B), a polyfunctional styrene compound having a hydrocarbon skeleton such as alkylene and arylene is preferable, and a cured product having a low dielectric constant and a low dielectric loss tangent that does not crack during curing is stabilized. You can get it.

【0013】また、該低誘電正接樹脂組成物を電気部品
の絶縁体に用いることによって誘電損失の少ない電気部
品を作製することができる。
Further, by using the low dielectric loss tangent resin composition as an insulator of an electric part, an electric part having a small dielectric loss can be manufactured.

【0014】[0014]

【発明の実施の形態】本発明の低誘電正接化方法、組成
物および硬化物について説明する。
BEST MODE FOR CARRYING OUT THE INVENTION The method for reducing the dielectric loss tangent, the composition and the cured product of the present invention will be described.

【0015】本発明の低誘電正接化方法は、180℃、
100分で硬化させて得られる硬化物の10GHzでの
誘電正接が0.002以上である汎用硬化性樹脂(A)
を安定して低誘電正接化する方法である。52℃におけ
る蒸気圧が1hPa以下の不揮発性と180℃、100
分で硬化させて得られる硬化物の10GHzでの誘電正
接が0.002未満の低誘電正接性を兼ね備えた硬化成
分(B)を汎用の硬化性樹脂(A)にブレンドすること
によって低誘電正接化がなされる。硬化成分(B)に5
2℃における蒸気圧が1hPa以下の不揮発性の化合物
を用いることによって、樹脂組成物からの誘電正接が低
い硬化成分(B)の揮発を防止することができるため、
樹脂組成物の低誘電正接性が安定して再現できる。
The method of reducing the dielectric loss tangent of the present invention is performed at 180 ° C.
General-purpose curable resin (A) having a dielectric loss tangent of 0.002 or more at 10 GHz obtained by curing for 100 minutes
Is a method of stably lowering the dielectric loss tangent. Non-volatile with vapor pressure of 1 hPa or less at 52 ° C and 180 ° C, 100
The low dielectric loss tangent is obtained by blending the general-purpose curable resin (A) with the curable component (B) having a low dielectric loss tangent of less than 0.002 at 10 GHz. Is made. 5 for curing component (B)
By using a non-volatile compound having a vapor pressure at 2 ° C. of 1 hPa or less, it is possible to prevent the curing component (B) having a low dielectric loss tangent from volatilizing from the resin composition.
The low dielectric loss tangent of the resin composition can be stably reproduced.

【0016】硬化性樹脂(A)としては、硬化性樹脂で
あれば特に制限はなく、一種類の硬化性樹脂であっても
良く、複数の硬化性樹脂の混合物である樹脂組成物であ
っても良い。硬化性樹脂(A)の例としては、エポキシ
樹脂、例えばビスフェノールA型エポキシ樹脂、ビスフ
ェノールF型エポキシ樹脂、脂肪族型エポキシ樹脂、脂
環式エポキシ樹脂、フェノールノボラック型エポキシ樹
脂、オルソクレゾールノボラック型エポキシ樹脂;エポ
キシ樹脂の硬化剤となるフェノール性水酸基を有する樹
脂、例えばノボラック樹脂、レゾール樹脂、ポリヒドロ
キシスチレン、ポリヒドロキシフェニルマレイミド;シ
アネートエステル樹脂、例えば、ビス(4−シアネート
フェニル)メタン、1、1−ビス(4−シアネートフェ
ニル)エタン、2、2'−ビス(4−シアネートフェニ
ル)プロパン;マレイミド樹脂、例えば、ビス(4−マ
レイミドフェニル)メタン、2、2'−ビス(4−マレ
イミドフェニル)プロパン、側鎖にマレイミド基を有す
る(4−ビニルフェニル)マレイミド重合体、側鎖にス
チレン基を有する(4−ビニルフェニル)マレイミド重
合体;(メタ)アクリレート樹脂、例えば2-メチル−
2−プロペニックアシッドオキシビスエチレンエステ
ル、2-メチル−2−プロペニックアシッド[1、1'−
ビシクロヘキシル]−4、4'−ジイルエステル、エポ
キシ樹脂にアクリル基、メタクリル基などの感光基を導
入したエポキシアクリレート等が挙げられる。
The curable resin (A) is not particularly limited as long as it is a curable resin, and may be one type of curable resin, or a resin composition which is a mixture of a plurality of curable resins. Is also good. Examples of the curable resin (A) include epoxy resins such as bisphenol A type epoxy resin, bisphenol F type epoxy resin, aliphatic type epoxy resin, alicyclic epoxy resin, phenol novolac type epoxy resin, orthocresol novolak type epoxy resin. Resin: Resin having a phenolic hydroxyl group as a curing agent for epoxy resin, for example, novolac resin, resole resin, polyhydroxystyrene, polyhydroxyphenylmaleimide; cyanate ester resin, for example, bis (4-cyanatephenyl) methane, 1, 1 -Bis (4-cyanatephenyl) ethane, 2,2'-bis (4-cyanatephenyl) propane; maleimide resins, such as bis (4-maleimidophenyl) methane, 2,2'-bis (4-maleimidophenyl) Propane, side chain Having a maleimide group (4-vinylphenyl) maleimide polymer, having a styrene group in the side chain (4-vinylphenyl) maleimide polymer; (meth) acrylate resins, for example, 2-methyl -
2-propenic acid oxybisethylene ester, 2-methyl-2-propenic acid [1, 1'-
Bicyclohexyl] -4,4′-diyl ester, epoxy acrylate in which a photosensitive group such as an acrylic group or a methacrylic group is introduced into an epoxy resin, and the like.

【0017】硬化成分(B)の好ましい例としては、側
鎖にビニル基を有するジビニルベンゼン単独重合体及び
共重合体等の炭化水素骨格からなる多官能スチレン化合
物が挙げられる。特に好ましい例としては、下記、一般
式〔1〕で示される重量平均分子量1000以下の多官
能スチレン化合物である。
Preferred examples of the curing component (B) include polyfunctional styrene compounds having a hydrocarbon skeleton such as divinylbenzene homopolymers and copolymers having a vinyl group in the side chain. A particularly preferred example is a polyfunctional styrene compound represented by the following general formula [1] and having a weight average molecular weight of 1,000 or less.

【0018】[0018]

【化4】 (式中、Rは置換基を有していても良い炭化水素骨格を
現わし、R2、R3、R4は、同一又は異なっても良い、
水素原子又は炭素数1〜6の炭化水素基を表し、R5
6、R7、R8は同一又は異なっても良い、水素原子又
は炭素数1から20の炭化水素基を表し、nは2以上の
整数を表す。) 前記式において、Rで表される炭化水素骨格は、該硬化
成分(B)の重量平均分子量が1000以下となるもの
であれば特に制限はない。即ち、Rで表される炭化水素
骨格はスチレン基における置換基、R2〜R8の有無及び
その大きさ、nの数に応じて適宜選択することができる
が、一般には炭素数1〜60であり、好ましくは炭素数
2〜30である。Rで表される炭化水素骨格は、直鎖状
又は分岐状のいずれでも良く、また、脂環式構造、芳香
族環構造等の環構造を一つ以上含んでいても良く、更に
ビニレン、エチニレン等の官能基を有していても良い。
[Chemical 4] (In the formula, R represents a hydrocarbon skeleton which may have a substituent, and R 2 , R 3 and R 4 may be the same or different,
Represents a hydrogen atom or a hydrocarbon group having 1 to 6 carbon atoms, R 5 ,
R 6 , R 7 , and R 8 may be the same or different and each represents a hydrogen atom or a hydrocarbon group having 1 to 20 carbon atoms, and n represents an integer of 2 or more. ) In the above formula, the hydrocarbon skeleton represented by R is not particularly limited as long as the weight average molecular weight of the curing component (B) is 1000 or less. That is, the hydrocarbon skeleton represented by R can be appropriately selected depending on the substituent in the styrene group, the presence or absence of R 2 to R 8 and its size, and the number of n, but generally has 1 to 60 carbon atoms. And preferably has 2 to 30 carbon atoms. The hydrocarbon skeleton represented by R may be linear or branched, and may contain one or more ring structures such as an alicyclic structure and an aromatic ring structure, and further vinylene and ethynylene. It may have a functional group such as.

【0019】Rで表される炭化水素骨格としては、例え
ばエチレン、プロピレン、ブチレン、メチルプロピレ
ン、メチルブチレン、ペンタメチレン、メチルペンタメ
チレン、シクロペンチレン、シクロヘキシレン、フェニ
レンジエチレン、キシリレン、1−フェニレン−3−メ
チルプロペニレン等が挙げられる。
Examples of the hydrocarbon skeleton represented by R include ethylene, propylene, butylene, methylpropylene, methylbutylene, pentamethylene, methylpentamethylene, cyclopentylene, cyclohexylene, phenylenediethylene, xylylene and 1-phenylene-. 3-methylpropenylene etc. are mentioned.

【0020】前記式において、R5〜R8で表される炭化
水素基としては、炭素数1〜20、好ましくは炭素数1
〜10の、直鎖状もしくは分岐状のアルキル基、例えば
メチル、エチル、n-プロピル、イソプロピル、n−ブ
チル、イソブチル、s−ブチル、ペンチル、ヘキシル、
デシル、エイコシル;直鎖状もしくは分岐状のアルケニ
ル基、例えばビニル、1−プロペニル、2−プロペニ
ル、2−メチルアリル、;アリール基、例えばフェニ
ル、ナフチル、ベンジル、フェニルエチル、スチリル、
シンナミルが挙げられる。
In the above formula, the hydrocarbon group represented by R 5 to R 8 has 1 to 20 carbon atoms, preferably 1 carbon atoms.
A linear or branched alkyl group of 10 such as methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, s-butyl, pentyl, hexyl,
Decyl, eicosyl; linear or branched alkenyl groups such as vinyl, 1-propenyl, 2-propenyl, 2-methylallyl; aryl groups such as phenyl, naphthyl, benzyl, phenylethyl, styryl,
Examples include cinnamil.

【0021】前記式において、そのような複数存在する
5〜R8は同一でも異なっていても良く、結合位置も同
一でも異なっていても良い。
In the above formula, a plurality of such R 5 to R 8 may be the same or different, and the bonding positions may be the same or different.

【0022】前記式において、R2、R3、又はR4で表
されるアルキル基としては、炭素数1〜6の直鎖状もし
くは分岐状のアルキル基、例えばメチル、エチル、n−
プロピル、イソプロピル、n−ブチル、イソブチル、ヘ
キシル等が挙げられる。
In the above formula, the alkyl group represented by R 2 , R 3 or R 4 is a linear or branched alkyl group having 1 to 6 carbon atoms, such as methyl, ethyl or n-.
Examples include propyl, isopropyl, n-butyl, isobutyl, hexyl and the like.

【0023】前記式において、置換基を有していても良
いビニル基[(R3)(R4)C=C(R2)−]はベン
ゼン環上、Rに対して、好ましくはメタ位又はパラ位に
存在する。
In the above formula, the vinyl group [(R 3 ) (R 4 ) C = C (R 2 )-] which may have a substituent is preferably in the meta position relative to R on the benzene ring. Or it exists in the para position.

【0024】本発明に用いる硬化成分(B)としては、
置換基を有していても良い複数のスチレン基を有する重
量平均分子量1000以下の多官能スチレンが好まし
い。硬化成分(B)の骨格には誘電率、誘電正接の観点
から炭化水素骨格を採用することが好ましい。これによ
ってスチレン基の低誘電率性及び低誘電正接性を損なう
ことなく、該硬化成分(B)に不揮発性及び柔軟性を付
与することができる。炭化水素骨格からなる多官能スチ
レン化合物は構造中に極性基を持たないため、誘電正接
の値が非常に小さく、10GHzにおける誘電正接の値
は0.002未満である。そのため、誘電正接の値が
0.002以上の汎用の硬化性樹脂(A)とブレンドし
た際に樹脂組成物全体の誘電正接を低下することができ
る。また、硬化成分(B)として重量平均分子量100
0以下の化合物を選択することによって、種々の硬化性
樹脂、ポリマーとの相溶性を増すとともに、成形加工時
の溶融流動性を増すことができ、加工性が改善できる。
該硬化成分(B)の重量平均分子量には特に制限はない
が、先に上げた理由から1000以下が好ましく、更に
好ましくは200〜500である。
As the curing component (B) used in the present invention,
A polyfunctional styrene having a weight average molecular weight of 1,000 or less and having a plurality of styrene groups which may have a substituent is preferable. The skeleton of the curing component (B) is preferably a hydrocarbon skeleton from the viewpoint of dielectric constant and dielectric loss tangent. This makes it possible to impart non-volatility and flexibility to the curable component (B) without impairing the low dielectric constant and low dielectric loss tangent of the styrene group. Since the polyfunctional styrene compound having a hydrocarbon skeleton has no polar group in the structure, its dielectric loss tangent value is very small, and the dielectric loss tangent value at 10 GHz is less than 0.002. Therefore, when blended with a general-purpose curable resin (A) having a dielectric loss tangent value of 0.002 or more, the dielectric loss tangent of the entire resin composition can be reduced. Further, as the curing component (B), a weight average molecular weight of 100
By selecting a compound of 0 or less, the compatibility with various curable resins and polymers can be increased, and the melt fluidity at the time of molding can be increased, and the workability can be improved.
The weight average molecular weight of the curable component (B) is not particularly limited, but is preferably 1,000 or less, more preferably 200 to 500 for the reasons mentioned above.

【0025】本発明の樹脂組成物は硬化触媒を添加しな
くとも加熱のみによって硬化することができるが、硬化
効率の向上を目的としてスチレン基を重合しうる硬化触
媒を添加することができる。その添加量には特に制限は
ないが、硬化触媒の残基が誘電特性に悪影響を与える恐
れがあるので樹脂成分の総量を100重量部として、
0.0005〜10重量部とすることが望ましい。本範
囲においてスチレン基の重合、架橋反応を促進して、低
温で硬化物を得ることができる。熱、光によってスチレ
ン基を重合、架橋しうるカチオン、ラジカル活性種を生
成する硬化触媒の例を以下に示す。カチオン系触媒とし
ては、BF4、PF6、AsF6、SbF6を対アニオンと
するジアリルヨードニウム塩、トリアリルスルホニウム
塩、脂肪族スルホニウム塩が挙げられ、旭電化工業製S
P-70、172、CP-66、日本曹達製CI-285
5、2823、三新化学工業製SI-100L、SI-1
50L等の市販品を使用することができる。ラジカル重
合触媒としては、ベンゾイン、ベンゾインメチルのよう
なベンゾイン系化合物、アセトフェノン、2、2−ジメ
トキシ−2−フェニルアセトフェノンのようなアセトフ
ェノン系化合物、チオキサントン、2、4−ジエチルチ
オキサントンのようなチオキサンソン系化合物、4、
4'−ジアジドカルコン、2、6−ビス(4'−アジドベ
ンザル)シクロヘキサノン、4、4'−ジアジドベンゾ
フェノンのようなビスアジド化合物、アゾビスイソブチ
ロニトリル、2、2−アゾビスプロパン、m、m'−ア
ゾキシスチレン、ヒドラゾン、のようなアゾ化合物、
2、5−ジメチル−2、5−ジ(t−ブチルパーオキ
シ)ヘキサン、2、5−ジメチル−2、5−ジ(t−ブ
チルパーオキシ)ヘキシン−3、ジクミルパーオキシド
のような有機過酸化物等が挙げられる。特に、官能基を
持たない化合物の水素引き抜きを生じさせ、架橋成分と
高分子量体間の架橋をなしうる有機過酸化物、ビスアジ
ド化合物を添加することが望ましい。
The resin composition of the present invention can be cured only by heating without adding a curing catalyst, but a curing catalyst capable of polymerizing a styrene group can be added for the purpose of improving curing efficiency. The addition amount is not particularly limited, but the residue of the curing catalyst may adversely affect the dielectric properties, so the total amount of the resin component is 100 parts by weight,
It is desirable that the amount be 0.0005 to 10 parts by weight. Within this range, polymerization of the styrene group and crosslinking reaction can be promoted to obtain a cured product at a low temperature. Examples of curing catalysts that generate cations and radical active species capable of polymerizing and crosslinking styrene groups by heat and light are shown below. Examples of the cation-based catalyst include diallyl iodonium salts, triallyl sulfonium salts, and aliphatic sulfonium salts having BF 4 , PF 6 , AsF 6 , and SbF 6 as counter anions.
P-70, 172, CP-66, Nippon Soda CI-285
5,2823, Sanshin Chemical Industry SI-100L, SI-1
A commercially available product such as 50 L can be used. As the radical polymerization catalyst, benzoin compounds such as benzoin and benzoinmethyl, acetophenone compounds, acetophenone compounds such as 2,2-dimethoxy-2-phenylacetophenone, thioxanthone compounds such as thioxanthone and 2,4-diethylthioxanthone compounds. 4,
4′-diazidochalcone, 2,6-bis (4′-azidobenzal) cyclohexanone, bisazide compound such as 4,4′-diazidobenzophenone, azobisisobutyronitrile, 2,2-azobispropane, m , Azo compounds such as m'-azoxystyrene, hydrazones,
Organics such as 2,5-dimethyl-2,5-di (t-butylperoxy) hexane, 2,5-dimethyl-2,5-di (t-butylperoxy) hexyne-3, dicumyl peroxide Examples thereof include peroxides. In particular, it is desirable to add an organic peroxide or a bisazide compound capable of causing hydrogen abstraction of a compound having no functional group and forming a bridge between the crosslinking component and the high molecular weight product.

【0026】本発明の樹脂組成物には、保存安定性を増
すために重合禁止剤を添加することができる。その添加
量は誘電特性、硬化時の反応性を著しく阻害しない範囲
が好ましく、樹脂成分の総量を100重量部として、
0.0005〜5重量部とすることが望ましい。本範囲
において保存時の不要な重合反応を抑制することがで
き、硬化時には著しい硬化障害をもたらすこともない。
重合禁止剤の例としてはハイドロキノン、p−ベンゾキ
ノン、クロラニル、トリメチルキノン、4−t−ブチル
ピロカテコール等のキノン類、芳香族ジオール類が挙げ
られる。
A polymerization inhibitor may be added to the resin composition of the present invention in order to increase storage stability. The addition amount is preferably in a range that does not significantly impair the dielectric properties and the reactivity during curing, and the total amount of the resin components is 100 parts by weight,
It is preferably 0.0005 to 5 parts by weight. Within this range, unnecessary polymerization reaction during storage can be suppressed, and no significant curing trouble is brought about during curing.
Examples of the polymerization inhibitor include quinones such as hydroquinone, p-benzoquinone, chloranil, trimethylquinone, and 4-t-butylpyrocatechol, and aromatic diols.

【0027】本発明の樹脂組成物は配合する硬化性樹脂
(A)と硬化成分(B)の相状態によって液状または固
形の樹脂組成物とすることができる。固形の樹脂組成物
は有機溶剤に溶解してワニスとして用いることもでき
る。
The resin composition of the present invention can be made into a liquid or solid resin composition depending on the phase states of the curable resin (A) and the curing component (B) to be blended. The solid resin composition can be dissolved in an organic solvent and used as a varnish.

【0028】本発明の硬化物は汎用の硬化性樹脂(A)
単独で用いた場合よりも誘電率、誘電正接が低く、また
不揮発性であるため低誘電正接化が安定して再現できる
ので、各種高周波機器の電気回路の絶縁体として好適に
用いることができる。具体例としては、液状の組成物の
場合はLSIの金ワイヤー配線の埋め込みに用いるポッ
ティング用樹脂への応用が挙げられ、固形の樹脂の場合
はプリプレグ、積層板、プリント基板への応用が挙げら
れる。
The cured product of the present invention is a general-purpose curable resin (A).
It has a lower dielectric constant and dielectric loss tangent than when used alone, and since it is non-volatile, it can be stably reproduced with a low dielectric loss tangent, and thus can be suitably used as an insulator for electric circuits of various high-frequency devices. Specific examples include application to a potting resin used for embedding a gold wire wiring of an LSI in the case of a liquid composition, and application to a prepreg, a laminate, a printed circuit board in the case of a solid resin. .

【0029】また、硬化成分(B)としては、アルキレ
ン、アリーレンのような炭化水素骨格を有する多官能ス
チレン化合物が好ましく、これによって硬化時にひび割
れのない低誘電率、低誘電正接な硬化物を安定して得る
ことができる。 [実施例]以下に実施例並びに比較例を示して本発明を具
体的に説明する。なお、以下の表中の樹脂組成比は重量
比を指す。
As the curing component (B), a polyfunctional styrene compound having a hydrocarbon skeleton such as alkylene or arylene is preferable, and a cured product having a low dielectric constant and a low dielectric loss tangent that does not crack during curing is stabilized. You can get it. [Examples] The present invention will be specifically described below with reference to Examples and Comparative Examples. The resin composition ratios in the tables below are weight ratios.

【0030】以下に実施例、比較例に使用した試薬の名
称、合成方法、ワニスの調整方法、硬化物の評価方法を
説明する。 (1)合成:1、2−ビス(ビニルフェニル)エタン
(BVPE)の合成 1、2−ビス(ビニルフェニル)エタン(BVPE)
は、公知の方法で合成した。500mlの三つ口フラスコ
にグリニャール反応用粒状マグネシウム(関東化学製)
5.36g(220mmol)をとり、滴下ロート、窒
素導入管、セプタムキャップを取り付けた。窒素気流
下、スターラーによってマグネシウム粒を攪拌しなが
ら、系全体をドライヤーで加熱脱水した。乾燥テトラヒ
ドロフラン300mlをシリンジにとり、セプタムキャッ
プを通じて注入した。溶液を−5℃に冷却した後、滴下
ロートを用いてビニルベンジルクロライド(VBC、東
京化成製)30.5g(200ml)を約4時間かけて
滴下した。滴下終了後、0℃/20時間、攪拌を続けた。
反応終了後、反応溶液をろ過して残存マグネシウムを除
き、エバポレーターで濃縮した。濃縮溶液をヘキサンで
希釈し、3.6%塩酸水溶液で1回、純水で3回洗浄し、
次いで硫酸マグネシウムで脱水した。脱水溶液をシリカ
ゲル(和光純薬製ワコーゲルC300)/ヘキサンのショ
ートカラムに通して精製し、真空乾燥してBVPEを得た。
得られたBVPEはm−m体、m−p体(液状)、p−p体
(結晶)の混合物であり、収率は90%であった。1H-NMRに
よって構造を調べたところその値は文献値と一致した(6
H-ビニル:α-2H、6.7、β-4H、5.7、5.2;8H-アロマテ
ィック:7.1-7.35;4H-メチレン:2.9)。本BVPEを窒
素気流下で硬化した硬化物の10GHzにおける誘電率
は2.5、誘電正接は0.001であった。本BVPE
を硬化成分(B)として用いた。 (2)液状の架橋成分の精製 先に合成したBVPEをメタノールに溶解して再結晶し
た。ろ過により固形成分を除き、ろ液を濃縮、真空乾燥
してm−m体、m−p体の液状BVPEを採取した。収
率は66%であった。本液状BVPEを窒素気流下で硬
化した硬化物の10GHzにおける誘電率は2.5、誘
電正接は0.001であった。本液状BVPEを液状の
樹脂組成物の硬化成分(B)として用いた。 (3)その他の試薬の名称 L−10:旭チバ製シアネートエステル樹脂(Aroc
y@ L−10);比較例1及び実施例1〜3の硬化性樹
脂A成分。
The names of the reagents used in the examples and comparative examples, the synthesizing method, the varnish adjusting method, and the cured product evaluation method will be described below. (1) Synthesis: Synthesis of 1,2-bis (vinylphenyl) ethane (BVPE) 1,2-bis (vinylphenyl) ethane (BVPE)
Was synthesized by a known method. Granular magnesium for Grignard reaction (manufactured by Kanto Kagaku) in a 500 ml three-necked flask
5.36 g (220 mmol) was taken, and a dropping funnel, a nitrogen introducing tube, and a septum cap were attached. The whole system was heated and dehydrated with a dryer while stirring the magnesium particles with a stirrer under a nitrogen stream. 300 ml of dry tetrahydrofuran was taken in a syringe and injected through a septum cap. After cooling the solution to −5 ° C., 30.5 g (200 ml) of vinylbenzyl chloride (VBC, manufactured by Tokyo Kasei) was added dropwise using a dropping funnel over about 4 hours. After the completion of dropping, stirring was continued at 0 ° C./20 hours.
After completion of the reaction, the reaction solution was filtered to remove residual magnesium, and concentrated with an evaporator. Dilute the concentrated solution with hexane, wash once with 3.6% hydrochloric acid aqueous solution and three times with pure water,
Then, it was dehydrated with magnesium sulfate. The dewatered solution was purified by passing through a short column of silica gel (Wako gel C300 manufactured by Wako Pure Chemical Industries) / hexane, and vacuum dried to obtain BVPE.
The obtained BVPE was a mixture of m-m body, m-p body (liquid) and p-p body (crystal), and the yield was 90%. When the structure was examined by 1H-NMR, the value was in agreement with the literature value (6
H-vinyl: α-2H, 6.7, β-4H, 5.7, 5.2; 8H-aromatic: 7.1-7.35; 4H-methylene: 2.9). The cured product obtained by curing the BVPE under a nitrogen stream had a dielectric constant of 2.5 and a dielectric loss tangent of 0.001 at 10 GHz. This BVPE
Was used as the curing component (B). (2) Purification of Liquid Crosslinking Component BVPE synthesized previously was dissolved in methanol and recrystallized. The solid component was removed by filtration, and the filtrate was concentrated and vacuum dried to collect m-m and m-p liquid BVPE. The yield was 66%. A cured product obtained by curing the liquid BVPE under a nitrogen stream had a dielectric constant of 2.5 at 10 GHz and a dielectric loss tangent of 0.001. This liquid BVPE was used as the curing component (B) of the liquid resin composition. (3) Names of other reagents L-10: Cyanate ester resin (Aroc manufactured by Asahi Ciba)
y @ L-10); Curable resin A component of Comparative Example 1 and Examples 1 to 3.

【0031】CL2021A:ダイセル工業製脂環式エ
ポキシ樹脂(セロキサイド2021A);比較例2及び
実施例4〜6の硬化性樹脂A成分。
CL2021A: Alicyclic epoxy resin (Celoxide 2021A) manufactured by Daicel Industries Ltd .; curable resin A component of Comparative Example 2 and Examples 4-6.

【0032】Ep828:油化シェル製ビスフェノール
A型エポキシ樹脂(エピコートEp828);比較例3
及び実施例7〜9の硬化性樹脂A成分。
Ep828: Bisphenol A type epoxy resin manufactured by Yuka Shell (Epicoat Ep828); Comparative Example 3
And the curable resin A component of Examples 7 to 9.

【0033】R684:日本化薬製アクリレート樹脂
(KAYARAD R−684);比較例4及び実施例
10〜12の硬化性樹脂A成分。
R684: Nippon Kayaku acrylate resin (KAYARAD R-684); curable resin A component of Comparative Example 4 and Examples 10-12.

【0034】KRM2650:旭電化製クレゾールノボ
ラック型エポキシ樹脂;比較例5、6及び実施例13〜
15の硬化性樹脂A成分の一成分。
KRM2650: Asahi Denka cresol novolac type epoxy resin; Comparative Examples 5 and 6 and Examples 13 to
One component of 15 curable resin A components.

【0035】PP1000:日本石油製フェノール樹
脂;比較例5、6及び実施例13〜15の硬化性樹脂A
成分の一成分。
PP1000: Phenol resin manufactured by Nippon Oil Co., Ltd .; Curable resin A of Comparative Examples 5 and 6 and Examples 13 to 15
One ingredient of ingredient.

【0036】1421:大日本インキ製ジシクロペンタ
ジエン骨格含有エポキシアクリレート樹脂;比較例5、
6及び実施例13〜15の硬化性樹脂A成分の一成分。
1421: Dicyclopentadiene skeleton-containing epoxy acrylate resin manufactured by Dainippon Ink; Comparative Example 5,
One component of the curable resin A component of Example 6 and Examples 13 to 15.

【0037】5X:龍森製酸化ケイ素フィラー(クリス
タライト5X);比較例5、6及び実施例13〜15の
充填剤。
5X: Silicon oxide filler manufactured by Tatsumori (Crystallite 5X); fillers of Comparative Examples 5 and 6 and Examples 13 to 15.

【0038】Co:和光純薬製ナフテン酸コバルト;比
較例1及び実施例1〜3の硬化触媒。
Co: cobalt naphthenate manufactured by Wako Pure Chemical Industries; curing catalyst of Comparative Example 1 and Examples 1 to 3.

【0039】CP66:旭電化製熱酸発生剤;比較例2
〜3及び実施例4〜9の硬化触媒。
CP66: Asahi Denka thermal acid generator; Comparative Example 2
~ 3 and curing catalysts of Examples 4-9.

【0040】25B:日本油脂製ラジカル重合開始剤
(パーヘキサ25B);比較例5、6及び実施例13〜
15の硬化剤の一成分。
25B: Radical polymerization initiator manufactured by NOF CORPORATION (Perhexa 25B); Comparative Examples 5 and 6 and Examples 13 to
One component of 15 hardeners.

【0041】SI100L:三新化学工業製熱酸発生
剤;比較例5、6及び実施例13〜15の硬化剤の一成
分。
SI100L: thermal acid generator manufactured by Sanshin Kagaku Kogyo; one component of the curing agent of Comparative Examples 5 and 6 and Examples 13 to 15.

【0042】ガラスクロス:日東紡製#2116;実施
例17のプリプレグの基材。
Glass cloth: Nitto Boseki # 2116; prepreg base material of Example 17.

【0043】DVB:ジビニルベンゼン;比較例6の硬
化成分(B)。 (3)ワニスの調整方法 所定量の硬化性樹脂(A)、硬化成分(B)、硬化触
媒、充填剤、溶媒を配合し、攪拌することによって硬化
触媒、充填材を溶解、分散してワニスを作製した。 (4)樹脂板の作製 無溶剤系の比較例1〜4、実施例1〜12のワニスはテ
フロン(登録商標)スペーサーを貼り付けた二枚のガラ
ス板の間に注入、密閉し、加熱、硬化して樹脂板を作製
した。加熱条件は120℃/30分、150℃/30
分、180℃/100分の多段階加熱とした。樹脂板は
70×70×1mmとした。
DVB: divinylbenzene; curing component (B) of Comparative Example 6. (3) Method for adjusting varnish Varnish by mixing predetermined amount of curable resin (A), curing component (B), curing catalyst, filler and solvent, and stirring to dissolve and disperse the curing catalyst and filler. Was produced. (4) Production of Resin Plate The solvent-free varnishes of Comparative Examples 1 to 4 and Examples 1 to 12 were injected and sealed between two glass plates having Teflon (registered trademark) spacers attached, and heated and cured. To produce a resin plate. Heating conditions are 120 ° C / 30 minutes, 150 ° C / 30
Minutes, 180 ° C./100 minutes multi-step heating. The resin plate was 70 × 70 × 1 mm.

【0044】比較例5、6、実施例13〜15はMEK
ワニスとして各樹脂を混合した。MEKワニスは、ポリ
エチレンテレフタレートフィルム(PET)上に塗布
し、室温で1時間、90℃で30分間乾燥し、後にPE
Tからフィルム状試料を剥離して成形用樹脂フィルムを
得た。図1に示すように、成形用フィルム2を鏡板4及
び離型フィルム3を介してテフロンスペーサー1内に入
れ、真空下、加熱プレスして樹脂板を作成した。圧力は
1.5MPa、加熱条件は120℃/30分、150℃/
30分、180℃/100分の多段階加熱とした。樹脂
板は70×70×1mmとした。 (5)誘電率、誘電正接の測定 誘電率、誘電正接は空洞共振法(アジレントテクノロジ
ー製8722ES型ネットワークアナライザー、関東電子応用
開発製空洞共振器)によって、10GHzの値を測定し
た。 [比較例1]比較例1は、シアネートエステル樹脂L−1
0の硬化物である。組成及び誘電特性を表1に示した。
誘電率は2.85、誘電正接は0.016であった。本
硬化物の誘電正接はやや高く、高周波信号に対応する電
気部品の絶縁体には十分対応できていなかった。 [実施例1〜3]実施例1〜3は、比較例1のシアネート
エステル樹脂L−10に液状のBVPEを添加した液状
ワニスの例である。BVPEの添加により、誘電率、誘
電正接の値は低下し、誘電率は2.71〜2.60、誘
電正接は0.009〜0.005となった。誘電特性
(特に誘電正接)を小さくすることができたため、従来
の比較例1に比べて誘電損失の小さな絶縁体を有する電
気部品の製造が可能となった。実施例1〜3のワニスを
5mmHg/室温で30分間真空乾燥した後、硬化した
が硬化物の誘電特性は変化しなかった。これにより、液
状BVPEの揮発による誘電特性の変化がないことを確
認した。
Comparative Examples 5 and 6 and Examples 13 to 15 are MEKs.
Each resin was mixed as a varnish. The MEK varnish is applied on a polyethylene terephthalate film (PET), dried at room temperature for 1 hour and at 90 ° C. for 30 minutes, and then PE
The film sample was peeled from T to obtain a resin film for molding. As shown in FIG. 1, the molding film 2 was put into the Teflon spacer 1 via the end plate 4 and the release film 3 and heat-pressed under vacuum to prepare a resin plate. Pressure is
1.5 MPa, heating conditions are 120 ° C / 30 minutes, 150 ° C /
Multi-step heating was performed for 30 minutes and 180 ° C./100 minutes. The resin plate was 70 × 70 × 1 mm. (5) Measurement of dielectric constant and dielectric loss tangent The dielectric constant and dielectric loss tangent were measured at a value of 10 GHz by a cavity resonance method (Agilent Technology model 8722ES network analyzer, Kanto Electronics Application Development cavity resonator). Comparative Example 1 Comparative Example 1 is a cyanate ester resin L-1.
It is a cured product of 0. The composition and dielectric properties are shown in Table 1.
The dielectric constant was 2.85 and the dielectric loss tangent was 0.016. The dielectric loss tangent of this cured product was rather high, and it could not be sufficiently applied to the insulators of electric parts that correspond to high frequency signals. [Examples 1 to 3] Examples 1 to 3 are examples of liquid varnishes obtained by adding liquid BVPE to the cyanate ester resin L-10 of Comparative Example 1. By adding BVPE, the values of the dielectric constant and the dielectric loss tangent decreased, and the dielectric constant became 2.71 to 2.60 and the dielectric loss tangent became 0.009 to 0.005. Since the dielectric characteristics (particularly the dielectric loss tangent) can be reduced, it is possible to manufacture an electric component having an insulator with a smaller dielectric loss than the conventional Comparative Example 1. The varnishes of Examples 1 to 3 were vacuum-dried at 5 mmHg / room temperature for 30 minutes and then cured, but the dielectric properties of the cured products did not change. This confirmed that there was no change in the dielectric properties due to volatilization of the liquid BVPE.

【0045】[0045]

【表1】 [比較例2]比較例2は、脂環式エポキシ樹脂CL202
1Aの硬化物である。組成及び誘電特性を表1に示し
た。誘電率は2.86、誘電正接は0.039であっ
た。本硬化物の誘電正接はやや高く、高周波信号に対応
する電気部品の絶縁体には十分対応できていなかった。 [実施例4〜6]実施例4〜6は、脂環式エポキシ樹脂C
L2021Aに液状のBVPEを添加した液状ワニスの
例である。組成及び誘電特性を表2に示した。BVPE
の添加により、誘電率、誘電正接の値は低下し、誘電率
は2.80〜2.65、誘電正接は0.029〜0.0
17となった。誘電特性(特に誘電正接)を小さくする
ことができたため、従来の比較例2に比べて誘電損失の
小さな絶縁体を有する電気部品の製造が可能となった。
[Table 1] [Comparative Example 2] Comparative Example 2 is an alicyclic epoxy resin CL202.
It is a cured product of 1A. The composition and dielectric properties are shown in Table 1. The dielectric constant was 2.86 and the dielectric loss tangent was 0.039. The dielectric loss tangent of this cured product was rather high, and it could not be sufficiently applied to the insulators of electric parts that correspond to high frequency signals. [Examples 4 to 6] Examples 4 to 6 are alicyclic epoxy resin C.
It is an example of a liquid varnish obtained by adding liquid BVPE to L2021A. The composition and dielectric properties are shown in Table 2. BVPE
The addition of the above decreases the values of the dielectric constant and the dielectric loss tangent, the dielectric constant is 2.80 to 2.65, and the dielectric loss tangent is 0.029 to 0.0.
It became 17. Since the dielectric characteristics (particularly the dielectric loss tangent) can be reduced, it is possible to manufacture an electric component having an insulator with a smaller dielectric loss than the conventional comparative example 2.

【0046】[0046]

【表2】 [比較例3]比較例3は、ビスフェノールA型エポキシ樹
脂Ep828の硬化物である。組成及び誘電特性を表3
に示した。誘電率は2.78、誘電正接は0.037で
あった。本硬化物の誘電正接はやや高く、高周波信号に
対応する電気部品の絶縁体には十分対応できていなかっ
た。 [実施例7〜9]実施例7〜9は、ビスフェノールA型エ
ポキシ樹脂Ep828に液状のBVPEを添加した液状
ワニスの例である。組成及び誘電特性を表3に示した。
BVPEの添加により、誘電率、誘電正接の値は低下
し、誘電率は2.74〜2.61、誘電正接は0.01
7〜0.010となった。誘電特性(特に誘電正接)を
小さくすることができたため、従来の比較例3に比べて
誘電損失の小さな絶縁体を有する電気部品の製造が可能
となった。
[Table 2] Comparative Example 3 Comparative Example 3 is a cured product of a bisphenol A type epoxy resin Ep828. The composition and dielectric properties are shown in Table 3.
It was shown to. The dielectric constant was 2.78 and the dielectric loss tangent was 0.037. The dielectric loss tangent of this cured product was rather high, and it could not be sufficiently applied to the insulators of electric parts that correspond to high frequency signals. [Examples 7 to 9] Examples 7 to 9 are examples of liquid varnish obtained by adding liquid BVPE to bisphenol A type epoxy resin Ep828. The composition and dielectric properties are shown in Table 3.
The addition of BVPE lowers the values of dielectric constant and dielectric loss tangent. The dielectric constant is 2.74 to 2.61 and the dielectric loss tangent is 0.01.
It became 7-0.010. Since the dielectric characteristics (particularly the dielectric loss tangent) can be reduced, it is possible to manufacture an electric component having an insulator with a smaller dielectric loss than the conventional Comparative Example 3.

【0047】[0047]

【表3】 [比較例4]比較例4は、アクリレート樹脂R684の硬
化物である。組成及び誘電特性を表4に示した。誘電率
は2.66、誘電正接は0.019であった。本硬化物
の誘電正接はやや高く、高周波信号に対応する電気部品
の絶縁体には十分対応できていなかった。 [実施例10〜12]実施例10〜12は、アクリレート
樹脂R684に液状のBVPEを添加した液状ワニスの
例である。組成及び誘電特性を表4に示した。BVPE
の添加により、誘電率、誘電正接の値は低下し、誘電率
は2.61〜2.56、誘電正接は0.017〜0.0
07となった。誘電特性(特に誘電正接)を小さくする
ことができたため、従来の比較例4に比べて誘電損失の
小さな絶縁体を有する電気部品の製造が可能となった。
[Table 3] Comparative Example 4 Comparative Example 4 is a cured product of acrylate resin R684. The composition and dielectric properties are shown in Table 4. The dielectric constant was 2.66 and the dielectric loss tangent was 0.019. The dielectric loss tangent of this cured product was rather high, and it could not be sufficiently applied to the insulators of electric parts that correspond to high frequency signals. [Examples 10 to 12] Examples 10 to 12 are examples of liquid varnish obtained by adding liquid BVPE to acrylate resin R684. The composition and dielectric properties are shown in Table 4. BVPE
The addition of the above decreases the values of the dielectric constant and the dielectric loss tangent, the dielectric constant is 2.61 to 2.56 and the dielectric loss tangent is 0.017 to 0.0
It became 07. Since the dielectric characteristics (particularly the dielectric loss tangent) can be reduced, it is possible to manufacture an electric component having an insulator with a smaller dielectric loss than the conventional comparative example 4.

【0048】[0048]

【表4】 [比較例5]比較例5は、エポキシ樹脂Ep828、KR
M2650、エポキシアクリレート樹脂1421、フェ
ノール樹脂PP1000等表記の物質をMEKに溶解分
散した後、乾燥・硬化した硬化物である。誘電率は2.
84、誘電正接は0.022であった。本硬化物の誘電
正接はやや高く、高周波信号に対応する電気部品の絶縁
体には十分対応できていなかった。 [比較例6]比較例6は、比較例5にDVBを架橋成分と
して加えた樹脂組成物の硬化物である。組成及び誘電特
性を表5に示した。実施例5と同様にして乾燥処理を行
った後に硬化したため、DVBが蒸発してしまい、十分
な低誘電正接化はなされなかった。誘電率は2.84、
誘電正接は0.021であった。 [実施例13〜15]実施例13〜15は、比較例5の樹
脂組成物にBVPEを添加した固形樹脂組成物の例であ
る。組成及び誘電特性を表5に示した。BVPEの添加
により、誘電率、誘電正接の値は低下し、誘電率は2.
67〜2.52、誘電正接は0.015〜0.007と
なった。誘電特性(特に誘電正接)を小さくすることが
できたため、従来の比較例5に比べて誘電損失の小さな
絶縁体を有する電気部品の製造が可能となった。
[Table 4] [Comparative Example 5] Comparative Example 5 is an epoxy resin Ep828, KR.
It is a cured product obtained by dissolving and dispersing the indicated substances such as M2650, epoxy acrylate resin 1421, and phenol resin PP1000 in MEK, and then drying and curing. Dielectric constant is 2.
84 and the dielectric loss tangent was 0.022. The dielectric loss tangent of this cured product was rather high, and it could not be sufficiently applied to the insulators of electric parts that correspond to high frequency signals. Comparative Example 6 Comparative Example 6 is a cured product of a resin composition obtained by adding DVB as a crosslinking component to Comparative Example 5. The composition and dielectric properties are shown in Table 5. Since it was cured after being dried in the same manner as in Example 5, DVB was evaporated and a sufficient low dielectric loss tangent was not achieved. Dielectric constant is 2.84,
The dielectric loss tangent was 0.021. [Examples 13 to 15] Examples 13 to 15 are examples of solid resin compositions obtained by adding BVPE to the resin composition of Comparative Example 5. The composition and dielectric properties are shown in Table 5. The addition of BVPE lowers the values of dielectric constant and dielectric loss tangent, and the dielectric constant is 2.
67-2.52 and the dielectric loss tangent were 0.015-0.007. Since the dielectric characteristics (particularly the dielectric loss tangent) can be reduced, it is possible to manufacture an electric component having an insulator with a smaller dielectric loss than the conventional Comparative Example 5.

【0049】[0049]

【表5】 [実施例16]以下に本発明の樹脂組成物を絶縁層とする
半導体装置の作成例を図2に基づき説明する。
[Table 5] Example 16 An example of making a semiconductor device using the resin composition of the present invention as an insulating layer will be described below with reference to FIG.

【0050】図2において、5はシールド、6は基板電
極、7は基板、8は金ワイヤ配線、9はアルミ電極、1
0はICチップ、11はダイボント゛樹脂、12は低誘電
正接樹脂硬化物を示し、(A)ワイヤボンディング方式
で作製された半導体装置のICチップ10の周辺に液漏
れ防止のシールド5を形成した。(B)ワイヤー配線8
を保護するために実施例3の低誘電正接樹脂組成物12
を滴下(ポッティング)して、真空下(約5mmH
g)、120℃/30分、150℃/30分、180℃
/100分の多段階加熱で硬化した。ワイヤー配線8回
りへの気泡の残存、樹脂組成物12の発泡、ワイヤー配
線8の断線、ショート等は発生していなかった。以上の
ように高周波信号に対応した半導体装置を作製した。本
半導体装置は配線周辺を誘電率、誘電正接が低い絶縁層
で被覆しているため、電気信号のロスが少ない半導体装
置となった。 [実施例17]実施例14の樹脂組成物のMEKワニスに
ガラスクロスを浸して、室温で1時間、90℃/60分
間乾燥してプリプレグを作製した。本プリプレグを真空
下、加熱加圧して模擬基板を作製した。加熱条件は12
0℃/30分、150℃/30分、180℃/100
分、プレス圧力1.5MPaの多段階加熱とした。模擬
基板は樹脂含有率が約35wt%、サイズは70×70
×0.15mmとした。本模擬基板の誘電率は3.2、
誘電正接は0.012と良好な誘電特性を示した。 [実施例18]実施例17で作製したプリプレグの両面に
電解銅箔の粗面を張り付け、真空下、加熱加圧して両面
銅張り積層板を作製した。加熱条件は120℃/30
分、150℃/30分、180℃/100分、プレス圧
力1.5MPaの多段階加熱とした。銅箔とプリプレグ
は良好な接着性を示した。これにより多層プリント基板
の作製が可能となった。 [実施例19]本発明の多層プリント基板の作製例を図3
に示す。(a)実施例17で作製した両面銅張積層板
(樹脂基板14及びその両面に設けた電解銅箔13)の
片側の銅箔13の表面にフォトレジスト(日立化成製H
S425)15をラミネートして全面露光した。次いで
残る銅箔13の表面にフォトレジスト(日立化成製HS
425)15をラミネートしてテストパターンを露光
し、未露光部のフォトレジスト15を1%炭酸ナトリウ
ム溶液で現像した。(b)硫酸5%、過酸化水素5%の
エッチング液で露出した銅箔13をエッチング除去し
て、両面銅張積層板の片面に導体配線を形成した。
(c)3%水酸化ナトリウム溶液で残存するフォトレジ
スト15を除去し、片面に配線を有する配線基板を得
た。同様にして2枚の配線基板を作製した。(d)二枚
の配線基板の配線側の面に実施例17のプリプレグを挟
み、真空下、加熱、加圧して多層化した。加熱条件は1
20℃/30分、150℃/30分、180℃/100
分、プレス圧力1.5MPaの多段階加熱とした。
(e)作製した多層板の外装銅面にフォトレジスト(日
立化成製HS425)15をラミネートしてテストパタ
ーンを露光し、未露光部のフォトレジスト15を1%炭
酸ナトリウム溶液で現像した。(f)硫酸5%、過酸化
水素5%のエッチング液で露出した銅箔13をエッチン
グ除去し、3%水酸化ナトリウム溶液で残存するフォト
レジスト15を除去して外装配線18を形成した。
(g)外装配線18と内層配線17を接続するスルーホ
ール19をドリル加工で作製した。(h)配線基板をめ
っき触媒のコロイド溶液に浸して、スルーホール19
内、基板表面に触媒を付与した。(i)めっき触媒の活
性化処理の後、無電解めっき(日立化成製CUST20
00)によって約1μmの種膜21を設けた。(j)フ
ォトレジスト(日立化成製HN920)15を配線基板
の両面にラミネートした。(k)スルーホール19及び
配線基板の端部をマスクして露光後、3%炭酸ナトリウ
ムで現像して開孔部22を設置した。(l)配線基板の
端部に電極23を設置し、電解めっきでスルーホール部
にめっき銅24を18μm形成した。(m)電極23部
分を切断除去し、残存するフォトレジスト15を5%水
酸化ナトリウム溶液で除去した。(n)硫酸5%、過酸
化水素5%のエッチング溶液に配線基板を浸して、約1
μmエッチングして種膜21を除去して多層配線板を作
製した。本多層配線板の絶縁層は通常のエポキシ樹脂組
成物に比べて誘電率、誘電正接が低く、高周波信号の誘
電損失を低減できる配線基板である。
In FIG. 2, 5 is a shield, 6 is a substrate electrode, 7 is a substrate, 8 is gold wire wiring, 9 is an aluminum electrode, 1
0 indicates an IC chip, 11 indicates a die bond resin, and 12 indicates a low dielectric loss tangent resin cured product. (A) A liquid leakage preventing shield 5 is formed around the IC chip 10 of the semiconductor device manufactured by the wire bonding method. (B) Wire wiring 8
Low dielectric loss tangent resin composition 12 of Example 3 for protecting the
(Potting) and under vacuum (approx. 5 mmH
g), 120 ° C / 30 minutes, 150 ° C / 30 minutes, 180 ° C
Cured by multi-step heating for 100 minutes. No residual air bubbles around the wire wiring 8, foaming of the resin composition 12, disconnection of the wire wiring 8, short circuit, or the like occurred. As described above, a semiconductor device compatible with high frequency signals was manufactured. Since this semiconductor device covers the periphery of the wiring with an insulating layer having a low dielectric constant and a low dielectric loss tangent, the semiconductor device has a small loss of electric signals. Example 17 A glass cloth was dipped in the MEK varnish of the resin composition of Example 14 and dried at room temperature for 1 hour at 90 ° C./60 minutes to prepare a prepreg. This prepreg was heated and pressed under vacuum to prepare a simulated substrate. The heating condition is 12
0 ° C / 30 minutes, 150 ° C / 30 minutes, 180 ° C / 100
Min., Multi-step heating with a press pressure of 1.5 MPa. The simulated substrate has a resin content of about 35 wt% and a size of 70x70.
× 0.15 mm. The permittivity of this simulated substrate is 3.2,
The dielectric loss tangent was 0.012, which was a good dielectric property. [Example 18] Rough surfaces of electrolytic copper foil were attached to both surfaces of the prepreg produced in Example 17, and heated and pressed under vacuum to produce a double-sided copper-clad laminate. Heating condition is 120 ℃ / 30
Minutes, 150 ° C./30 minutes, 180 ° C./100 minutes, and multi-stage heating with a pressing pressure of 1.5 MPa. The copper foil and the prepreg showed good adhesion. This made it possible to fabricate a multilayer printed circuit board. [Example 19] Fig. 3 shows an example of manufacturing a multilayer printed circuit board according to the present invention.
Shown in. (A) A photoresist (Hitachi Chemical Co., Ltd. H on the surface of the copper foil 13 on one side of the double-sided copper-clad laminate (resin substrate 14 and electrolytic copper foils 13 provided on both sides thereof) produced in Example 17
S425) 15 was laminated and exposed over the entire surface. Then, a photoresist (HS manufactured by Hitachi Chemical Co., Ltd.) is formed on the surface of the remaining copper foil 13.
425) 15 was laminated to expose the test pattern, and the unexposed portion of the photoresist 15 was developed with a 1% sodium carbonate solution. (B) The exposed copper foil 13 was removed by etching with an etching solution containing 5% sulfuric acid and 5% hydrogen peroxide to form conductor wiring on one surface of the double-sided copper-clad laminate.
(C) The remaining photoresist 15 was removed with a 3% sodium hydroxide solution to obtain a wiring board having wiring on one surface. Two wiring boards were produced in the same manner. (D) The prepreg of Example 17 was sandwiched between the wiring-side surfaces of two wiring boards, and heated and pressed under vacuum to form a multilayer structure. The heating condition is 1
20 ° C / 30 minutes, 150 ° C / 30 minutes, 180 ° C / 100
Min., Multi-step heating with a press pressure of 1.5 MPa.
(E) A photoresist (HS425 manufactured by Hitachi Chemical Co., Ltd.) 15 was laminated on the exterior copper surface of the produced multilayer board to expose a test pattern, and the unexposed portion of the photoresist 15 was developed with a 1% sodium carbonate solution. (F) The exposed copper foil 13 was removed by etching with an etching solution containing 5% sulfuric acid and 5% hydrogen peroxide, and the remaining photoresist 15 was removed with a 3% sodium hydroxide solution to form the exterior wiring 18.
(G) A through hole 19 for connecting the exterior wiring 18 and the inner layer wiring 17 was produced by drilling. (H) Immerse the wiring board in the colloidal solution of the plating catalyst to form the through hole 19
Of these, a catalyst was applied to the substrate surface. (I) After the activation treatment of the plating catalyst, electroless plating (CUST20 manufactured by Hitachi Chemical
00) provided a seed film 21 of about 1 μm. (J) Photoresist (HN920 manufactured by Hitachi Chemical) 15 was laminated on both surfaces of the wiring board. (K) The through hole 19 and the end of the wiring board were masked, exposed, and then developed with 3% sodium carbonate to form an opening 22. (L) The electrode 23 was placed at the end of the wiring board, and plated copper 24 was formed to 18 μm in the through hole by electrolytic plating. (M) The electrode 23 portion was cut and removed, and the remaining photoresist 15 was removed with a 5% sodium hydroxide solution. (N) Immerse the wiring board in an etching solution of 5% sulfuric acid and 5% hydrogen peroxide, and
The multilayer film was manufactured by removing the seed film 21 by μm etching. The insulating layer of the present multilayer wiring board is a wiring board which has a lower dielectric constant and a lower dielectric loss tangent than ordinary epoxy resin compositions and can reduce the dielectric loss of high frequency signals.

【0051】[0051]

【発明の効果】本発明によれば、汎用の硬化性樹脂
(A)に、180℃、100分で硬化させて得られる硬
化物の10GHzでの誘電正接が0.002未満である
低誘電正接性と52℃における蒸気圧が1hPa以下の
不揮発性とを兼ね備えた硬化成分(B)をブレンドする
ことにより、後述する実施例の記載からも明らかなよう
に、硬化時の硬化成分(B)の揮発に伴う誘電特性のば
らつきを抑制しつつ、硬化性樹脂組成物の低誘電正接化
を図ることができる。
Industrial Applicability According to the present invention, a low dielectric loss tangent having a dielectric loss tangent at 10 GHz of less than 0.002 at a cured product obtained by curing a general-purpose curable resin (A) at 180 ° C. for 100 minutes. Of the curable component (B) at the time of curing, by blending the curable component (B) having both properties and a non-volatile property that the vapor pressure at 52 ° C. is 1 hPa or less, as will be apparent from the description of Examples below. It is possible to reduce the dielectric loss tangent of the curable resin composition while suppressing the variation in the dielectric properties due to volatilization.

【0052】前述の硬化成分(B)としては、アルキレ
ン、アリーレンのような炭化水素骨格を有する多官能ス
チレン化合物が好ましく、これによって硬化時にひび割
れのない低誘電率、低誘電正接な硬化物を安定して得る
ことができる。
As the above-mentioned curing component (B), a polyfunctional styrene compound having a hydrocarbon skeleton such as alkylene or arylene is preferable, and a cured product having a low dielectric constant and a low dielectric loss tangent that does not crack during curing is stabilized. You can get it.

【0053】また、該低誘電正接樹脂組成物を電気部品
の絶縁体に用いることによって誘電損失の少ない電気部
品を作製することができる。
Further, by using the low dielectric loss tangent resin composition as an insulator of an electric component, an electric component having a small dielectric loss can be manufactured.

【図面の簡単な説明】[Brief description of drawings]

【図1】樹脂板作製時の治具の配置図である。FIG. 1 is a layout view of a jig when manufacturing a resin plate.

【図2】ワイヤボンディング方式で作製された半導体装
置の断面模式図である。
FIG. 2 is a schematic cross-sectional view of a semiconductor device manufactured by a wire bonding method.

【図3】多層プリント基板作製時のプロセスを現わす模
式図である。
FIG. 3 is a schematic view showing a process for manufacturing a multilayer printed circuit board.

【符号の説明】[Explanation of symbols]

1…スペーサー、2…成形用フィルム、3…離型フィル
ム、4…鏡板、5…シールド、6…基板電極、7…基
板、8…金ワイヤ配線、9…アルミ電極、10…ICチ
ップ、11…ダイボント゛樹脂、12…低誘電正接樹脂硬
化物、13…電解銅箔、14…樹脂基板、15…フォト
レジスト、16…プリプレグ、17…内層配線、18…
外層配線、19…スルーホール、20…めっき触媒、2
1…種膜、22…開孔部、23…電極、24…めっき
銅。
1 ... Spacer, 2 ... Molding film, 3 ... Release film, 4 ... End plate, 5 ... Shield, 6 ... Substrate electrode, 7 ... Substrate, 8 ... Gold wire wiring, 9 ... Aluminum electrode, 10 ... IC chip, 11 ... Die bond resin, 12 ... Low dielectric loss tangent resin cured product, 13 ... Electrolytic copper foil, 14 ... Resin substrate, 15 ... Photoresist, 16 ... Prepreg, 17 ... Inner layer wiring, 18 ...
Outer layer wiring, 19 ... through hole, 20 ... plating catalyst, 2
1 ... Seed film, 22 ... Open hole part, 23 ... Electrode, 24 ... Plated copper.

フロントページの続き (51)Int.Cl.7 識別記号 FI テーマコート゛(参考) // C08L 51:00 C08L 51:00 (72)発明者 石川 敬郎 茨城県日立市大みか町七丁目1番1号 株 式会社日立製作所日立研究所内 (72)発明者 高橋 昭雄 茨城県日立市大みか町七丁目1番1号 株 式会社日立製作所日立研究所内 Fターム(参考) 4F072 AB02 AB08 AB28 AB29 AD03 AD09 AD11 AD13 AD23 AD52 AG03 AL13 4F100 AB17 AB33 AK12A AR00B AR00C BA02 BA03 BA07 BA10B BA10C BA15 DH01A GB43 JG01B JG01C 4J026 AA20 AA45 AA57 AB01 AB04 AB05 AB37 AC19 BA07 BB01 GA07 5E346 AA13 CC04 CC08 CC32 DD02 DD12 DD32 DD44 EE02 EE09 FF04 FF07 FF15 GG13 GG15 GG17 GG18 GG22 GG28 HH06Continuation of front page (51) Int.Cl. 7 Identification code FI theme code (reference) // C08L 51:00 C08L 51:00 (72) Inventor Keiro Ishikawa 7-1 Omika-cho, Hitachi-shi, Ibaraki Hitachi Ltd., Hitachi Research Laboratory (72) Inventor Akio Takahashi 7-1-1, Omika-cho, Hitachi City, Ibaraki Prefecture F-term inside Hitachi Laboratories Hitachi Research Laboratory (reference) 4F072 AB02 AB08 AB28 AB29 AD03 AD09 AD11 AD13 AD23 AD23 AD52 AG03 AL13 4F100 AB17 AB33 AK12A AR00B AR00C BA02 BA03 BA07 BA10B BA10C BA15 DH01A GB43 JG01B JG01C 4J026 AA20 AA45 AA57 AB01 AB04 AB05 AB37 AC19 BA07 BB01 GG17FF15 DD15FF17 FF15 DD17FF15 DD13 FF17 DD15 DD07 DD15 DD02 DD44 DD12 DD12 DD02 DD12 DD02 DD12 DD02 DD12 DD12 DD12 DD02 DD02 DD12 DD02 DD12 DD02 DD12 DD02 DD12 DD02 DD12 DD12 DD02 DD12 DD12 DD12 DD02 DD02 DD12 DD02 DD02 DD12 DD02 DD12 DD02 DD12 DD12 DD12 DD12 DD02 DD12 DD02 DD12 DD12 DD12 DD12 DD12 DD12 DD12 DD12 DD12 DD12 DD12 DD12 DD12 DD12 DD12 DD12 DD12 DD12 DD12 DD12 DD12 DD12 DD12 DD12 DD12 DD12 DD12 DD12 DD12 DD12 DD12 DD12 DD12 DD12 DD12 DD12 DD12 DD12 DD12 DD12 DD12 DD12 DD04 DD12 DD44 DD12 DD16 GG28 HH06

Claims (10)

【特許請求の範囲】[Claims] 【請求項1】180℃、100分で硬化させて得られる
硬化物の10GHzでの誘電正接が0.002以上であ
る硬化性樹脂(A)に、52℃における蒸気圧が1hP
a以下であり、180℃、100分で硬化させて得られ
る硬化物の10GHzでの誘電正接が0.002未満で
ある硬化成分(B)を添加することを特徴とする低誘電
正接化方法。
1. A curable resin (A) having a dielectric loss tangent of 0.002 or more at 10 GHz at 180 ° C. and a cured product obtained by curing at 180 ° C. for 1 hP at 52 ° C.
A method for reducing dielectric loss tangent, which comprises adding a curing component (B) which is a or less and has a dielectric loss tangent of less than 0.002 at 10 GHz of a cured product obtained by curing at 180 ° C. for 100 minutes.
【請求項2】硬化成分(B)が下記一般式: 【化1】 (式中、Rは置換基を有していても良い炭化水素骨格を
現わし、R2、R3、R4は、同一又は異なっても良い、
水素原子又は炭素数1〜6の炭化水素基を表し、R5
6、R7、R8は同一又は異なっても良い、水素原子又
は炭素数1から20の炭化水素基を表し、nは2以上の
整数を表す。)で示される複数のスチレン基を有する重
量平均分子量1000以下の化合物である請求項1に記
載の低誘電正接化方法。
2. The curing component (B) has the following general formula: (In the formula, R represents a hydrocarbon skeleton which may have a substituent, and R 2 , R 3 and R 4 may be the same or different,
Represents a hydrogen atom or a hydrocarbon group having 1 to 6 carbon atoms, R 5 ,
R 6 , R 7 , and R 8 may be the same or different and each represents a hydrogen atom or a hydrocarbon group having 1 to 20 carbon atoms, and n represents an integer of 2 or more. The low dielectric loss tangent method according to claim 1, which is a compound having a plurality of styrene groups and having a weight average molecular weight of 1,000 or less.
【請求項3】180℃、100分で硬化させて得られる
硬化物の10GHzでの誘電正接が0.002以上であ
る硬化性樹脂(A)と下記一般式: 【化2】 (式中、Rは置換基を有していても良い炭化水素骨格を
現わし、R2、R3、R4は、同一又は異なっても良い、
水素原子又は炭素数1〜6の炭化水素基を表し、R5
6、R7、R8は同一又は異なっても良い、水素原子又
は炭素数1から20の炭化水素基を表し、nは2以上の
整数を表す。)で示される複数のスチレン基を有する重
量平均分子量1000以下の硬化成分(B)を含有する
組成物。
3. A curable resin (A) having a dielectric loss tangent at 10 GHz of not less than 0.002 at 10 GHz, which is obtained by curing at 180 ° C. for 100 minutes, and the following general formula: (In the formula, R represents a hydrocarbon skeleton which may have a substituent, and R 2 , R 3 and R 4 may be the same or different,
Represents a hydrogen atom or a hydrocarbon group having 1 to 6 carbon atoms, R 5 ,
R 6 , R 7 , and R 8 may be the same or different and each represents a hydrogen atom or a hydrocarbon group having 1 to 20 carbon atoms, and n represents an integer of 2 or more. ) A composition containing a curing component (B) having a plurality of styrene groups and having a weight average molecular weight of 1000 or less.
【請求項4】前記硬化性樹脂(A)がエポキシ樹脂、フ
ェノール樹脂、シアネートエステル樹脂、マレイミド樹
脂、アクリレート樹脂、メタクリレート樹脂から選ばれ
る少なくとも一種類の硬化性樹脂を含有することを特徴
とする請求項3に記載の組成物。
4. The curable resin (A) contains at least one curable resin selected from an epoxy resin, a phenol resin, a cyanate ester resin, a maleimide resin, an acrylate resin and a methacrylate resin. Item 4. The composition according to Item 3.
【請求項5】180℃、100分で硬化させて得られる
硬化物の10GHzでの誘電正接が0.001〜0.0
1である請求項3、4のいずれかに記載の組成物。
5. The dielectric loss tangent at 10 GHz of a cured product obtained by curing at 180 ° C. for 100 minutes is 0.001 to 0.0.
The composition according to claim 3, wherein the composition is 1.
【請求項6】請求項3〜5のいずれか1項に記載の組成
物の硬化物。
6. A cured product of the composition according to any one of claims 3 to 5.
【請求項7】請求項6に記載の硬化物を絶縁層とする電
気部品。
7. An electric component comprising the cured product according to claim 6 as an insulating layer.
【請求項8】180℃、100分で硬化させて得られる
硬化物の10GHzでの誘電正接が0.002以上であ
る硬化性樹脂(A)と下記一般式: 【化3】 (式中、Rは置換基を有していても良い炭化水素骨格を
現わし、R2、R3、R4は、同一又は異なっても良い、
水素原子又は炭素数1〜6の炭化水素基を表し、R5
6、R7、R8は同一又は異なっても良い、水素原子又
は炭素数1から20の炭化水素基を表し、nは2以上の
整数を表す。)で示される複数のスチレン基を有する重
量平均分子量1000以下の硬化成分(B)を含有する
組成物を有機又は無機のクロス又は不職布に含浸させ、
乾燥させてなるプリプレグ。
8. A curable resin (A) having a dielectric loss tangent at 10 GHz of not less than 0.002 at 10 GHz, which is obtained by curing at 180 ° C. for 100 minutes, and the following general formula: (In the formula, R represents a hydrocarbon skeleton which may have a substituent, and R 2 , R 3 and R 4 may be the same or different,
Represents a hydrogen atom or a hydrocarbon group having 1 to 6 carbon atoms, R 5 ,
R 6 , R 7 , and R 8 may be the same or different and each represents a hydrogen atom or a hydrocarbon group having 1 to 20 carbon atoms, and n represents an integer of 2 or more. ) The composition containing the curing component (B) having a plurality of styrene groups and having a weight average molecular weight of 1000 or less is impregnated into an organic or inorganic cloth or unwoven cloth,
A dried prepreg.
【請求項9】請求項8に記載のプリプレグ又はその硬化
物の両面又は片面に導体層が設置されてなる積層板。
9. A laminated board having conductor layers provided on both sides or one side of the prepreg or the cured product thereof according to claim 8.
【請求項10】請求項9に記載の積層板の導体層に配線
加工を施し、プリプレグを介して積層板を積層接着して
なる多層プリント基板。
10. A multilayer printed circuit board obtained by applying wiring processing to a conductor layer of the laminated board according to claim 9, and laminating and adhering the laminated board via a prepreg.
JP2002011102A 2002-01-21 2002-01-21 Low dielectric loss tangent method, low dielectric loss tangent resin composition and electrical component using the same Expired - Fee Related JP3938500B2 (en)

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