JP2003105036A - Resin composition of low dielectric dissipation factor and insulator and semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a resin composition of a low dielectric dissipation factor which gives an insulator having a low dielectric constant and a low dielectric dissipation factor corresponding to a high frequency signal, causes when cured no cracks, volatilization of a crosslinkable component, and the like, and can cover a wiring of a complicated shape. SOLUTION: The resin composition of a low dielectric dissipation factor exhibiting fluidity at ordinary temperature comprises a crosslinkable component bearing plural styrenic groups represented by the general formula (wherein R is an optionally substituted hydrocarbyl skeleton; R<1> is any of hydrogen and methyl and ethyl group; m is an integer of 1-4; and n is an integer of at least 2) and further contains at least one of a polymeric substance and a filler.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a low dielectric loss tangent resin composition which has fluidity at room temperature for handling high frequency signals, and a semiconductor device using the resin composition.

[0002]

2. Description of the Related Art In recent years, the signal band of information communication devices such as PHS and mobile phones and the CPU clock time of computers have reached the GHz band, and higher frequencies have been in progress.

The dielectric loss of an electrical signal is proportional to the product of the square root of the relative permittivity of the insulator forming the circuit, the dielectric loss tangent, and the frequency of the signal used. Therefore, the higher the frequency of the signal, the larger the dielectric loss. Since the dielectric loss attenuates the electrical signal and impairs the reliability of the signal, it is necessary to select a material having a small dielectric constant and a small dielectric loss tangent for the insulator to suppress it.

Removal of polar groups in the molecular structure is effective for lowering the dielectric constant and dielectric loss tangent of the insulator, and fluororesin, curable polyolefin, cyanate ester resin, curable polyphenylene oxide, allyl-modified polyphenylene ether, A polyetherimide modified with divinylbenzene or divinylnaphthalene has been proposed.

A fluororesin typified by polytetrafluoroethylene (PTFE) has a low dielectric constant and a low dielectric loss tangent and is used as a substrate material for handling high frequency signals. However, since PTFE is a thermoplastic resin, it has a large expansion and contraction at the time of molding and has a melting temperature of 300 ° C. or higher, which makes it difficult to handle. In addition, various proposals have been made for imparting crosslinkability and solubility to fluororesins, but these materials are generally expensive and many of them are inferior to PTFE in characteristics.

On the other hand, various non-fluorine-based low dielectric constant and low dielectric loss tangent resins which are soluble in an organic solvent and are easy to handle have been studied.

For example, a diene polymer such as polybutadiene soaked in a glass cloth and cured with a peroxide (Japanese Patent Laid-Open No. 8-208856), an epoxy group is introduced into a norbornene addition polymer, and the curability is improved. A cyclic polyolefin to which is added (JP-A-10-158337),
Cyanate ester, diene-based polymer, epoxy resin heated to B stage (JP-A-11-1244)
No. 91), a modified resin composed of polyphenylene oxide, a diene polymer, triallyl isocyanate (JP-A-9-118759), a resin composition composed of allylated polyphenylene ether, triallyl isocyanate, etc. (JP-A-9-246429). Japanese Patent Laid-Open No. 5-1561 which is an alloy of polyetherimide with styrene, divinylbenzene and divinylnaphthalene.
59), or a resin composition composed of, for example, hydroquinone bis (vinylbenzyl) ether synthesized from a dihydroxy compound and chloromethylstyrene by a Williamson reaction and a novolac phenol resin (Japanese Patent Laid-Open No. Hei 5 (1993) -58).
No. 78552).

It has been stated that many of the above may include divinylbenzene as a crosslinker or coagent.
This is because divinylbenzene does not have a polar group in its structure, the cured product has a low dielectric constant and a low dielectric loss tangent, and the thermal decomposition temperature is as high as 350 ° C. or higher. .

However, since the divinylbenzene cured product is very brittle, it has a drawback that cracks are likely to occur in the cured product during curing. Therefore, the amount of divinylbenzene added is usually set lower than that of other resin components. In the example of JP-A-5-156159 in which divinylbenzene is used as the main crosslinking agent, the addition amount is about 9% of the total resin. The divinylnaphthalene described in the publication also has the same problem as divinylbenzene in that the cured product is brittle. Further, since divinylbenzene has volatility, it has a drawback that it is difficult to control the properties of the cured product because it is volatilized during curing.

On the other hand, Japanese Unexamined Patent Publication (Kokai) No. 5-78552 discloses that a bisstyrene compound such as hydroquinone bis (vinylbenzyl) ether is non-volatile and gives a cured product having high flexibility.

However, in general, the alkylene ether group is more disadvantageous than the alkylene group and the arylene group in terms of dielectric constant, dielectric loss tangent and heat resistance. That is, a hydrocarbon-based skeleton such as an alkylene group or an arylene group is preferable for the structure connecting the styrene groups.

As an example of a polyfunctional styrene compound in which styrene groups are bonded by an ethylene group, there is disclosed in JP-A-9-20862.
1,2-bisvinylphenylethane described in Japanese Patent No.
Makromol. Chem. There is a divinylbenzene oligomer having a vinyl group on the side chain described in Vol. 187, page 23. However, these reports did not consider mechanical strength, heat resistance, dielectric constant, and dielectric loss tangent. Further, in each of the above reports, the examination of fluidity at room temperature was not made.

The low dielectric loss tangent resin composition having fluidity at room temperature can be used at room temperature and at low temperature when a conductor wiring having a complicated shape such as the gold wire wiring of the LSI shown in FIG. 1 is covered with an insulating layer. It has the advantage that it can be covered with stress.
That is, an insulating layer having a complicated shape can be easily manufactured.

[0014]

Divinylbenzene, which has hitherto been used as a cross-linking component having a low dielectric constant and a low dielectric loss tangent, has the drawback that it is volatile and the cured product is brittle.

An object of the present invention is a liquid low dielectric loss tangent having a low dielectric constant and a low dielectric loss tangent, a nonvolatile property, an excellent compatibility with various resins, a heat resistance after curing and a good flexibility, and a crosslinking component. A resin composition, an insulator obtained by curing the resin composition, and a semiconductor device using the same are provided.

[0016]

[Means for Solving the Problems] [1] General Formula

[0017]

[Chemical 2] (However, R is a hydrocarbon skeleton which may have a substituent,
R1 is any one of hydrogen, methyl and ethyl, m is an integer of 1 to 4, and n is an integer of 2 or more) and contains a cross-linking component having a plurality of styrene groups. A low dielectric loss tangent resin composition containing at least one of the agents and having fluidity at room temperature.

[2] The low dielectric loss tangent resin composition according to the above [1], wherein the crosslinking component is liquid at room temperature and the high molecular weight polymer is liquid at room temperature.

[3] The above-mentioned [2], wherein the high-molecular weight substance is a resin containing at least one selected from butadiene, a polymer containing an acrylic acid ester monomer, or a polysiloxane which may have a substituent. The low dielectric loss tangent resin composition described in 1.

[4] The filler has an average particle size of 0.1 to 1
00 μm magnesium hydroxide, aluminum hydroxide,
The low dielectric loss tangent resin composition according to the above [1], containing at least one selected from titanium oxide, silicon oxide, borosilicate glass, aluminum borate, and carbon.

Further, it contains at least one of a curing catalyst capable of polymerizing and cross-linking a styrene group, and a polymerization inhibitor suppressing polymerization and cross-linking of the styrene group.

A low dielectric loss tangent resin composition containing 0.0005 to 10 parts by weight of a curing catalyst and 0.0005 to 5 parts by weight of a polymerization inhibitor based on 100 parts by weight of a total of resin components. It is a cured product or an insulator obtained by curing the above low dielectric loss tangent resin composition.

Further, it is a semiconductor device in which a cured product of the low dielectric loss tangent resin composition having fluidity at room temperature is used as an insulator.

As described above, the cured product of divinylbenzene has high heat resistance, low dielectric constant and low dielectric loss tangent, but according to the present invention, a crosslinking component of a nonvolatile hydrocarbon skeleton having a plurality of styrene groups is used. By mixing with a high molecular weight material or a filler, it is possible to stably obtain a cured product having a low dielectric constant and a low dielectric loss tangent without cracking during curing. this is,
Since the styrene groups are bonded by a flexible group such as alkylene, cracks do not occur during curing.

By liquefying the low dielectric loss tangent resin composition, it is effective as various insulating layers having a complicated shape, particularly as an insulating layer of a semiconductor device.

[0026]

BEST MODE FOR CARRYING OUT THE INVENTION A low dielectric loss tangent resin composition and a cured product suitable for the present invention include a liquid component containing a cross-linking component having a plurality of styrene groups represented by the above general formula and further containing a high molecular weight material and a filler. A low dielectric loss tangent resin composition.

As a liquefaction method, a method of dissolving in an organic solvent is convenient, but when a general organic solvent is used, foaming or volume shrinkage due to volatilization of the solvent during drying becomes a problem. There is. In order to suppress this, there is a method of using a reactive diluent capable of reacting with the crosslinking component as a solvent.

Examples of the reactive diluent include various alkyl styrenes having a high boiling point, alkoxy styrenes, halogenated styrenes and the like. A more preferable liquefaction method is a method of using a liquid component at room temperature as the crosslinking component and the high molecular weight substance. As a result, the low dielectric loss tangent resin composition is made solvent-free, and foaming and volume shrinkage due to volatilization of the solvent are eliminated.

Examples of liquid high molecular weight substances include polybutadiene, polyacrylic acid esters, polysiloxanes having various substituents, and the like.

Examples of the liquid crosslinking component include m of an aromatic ring.
A polyfunctional styrene compound in which the position is bound by an alkylene group, such as 1,2-bis (m-vinylphenyl) ethane, 1- (p
-Vinylphenyl) -2- (m-vinylphenyl) ethane, 1,4-bis (m-vinylphenylethyl) benzene, 1,3-bis (p-vinylphenylethyl) benzene, 1,3-bis (m -Vinylphenylethyl) benzene, 1- (p-vinylphenylethyl) -3- (m-vinylphenylethyl) benzene and the like are preferable.

Further, a preferable example is a divinylbenzene polymer (oligomer) having a vinyl group in its side chain.

As a method for synthesizing these cross-linking components, halogenoalkylstyrene synthesized by the method described in JP-A-11-60519 is coupled with various halides by a Grignard reaction, Makro.
mol. Chem. vol. 187, p. 23, (198
A method for synthesizing a divinylbenzene oligomer having a vinyl group as the side chain described in 6) can be mentioned.

The cross-linking component thus obtained cross-links at a relatively low temperature of 180 ° C. or lower without adding a curing catalyst to give a cured product having a high heat resistance, a low dielectric constant and a low dielectric loss tangent. give.

The filler used in the present invention can be improved in strength, adjusted in permittivity, reduced in weight and flame retardant.

To improve the strength, it is preferable to add a fibrous filler such as aluminum borate whiskers and carbon fibers. For adjusting the dielectric constant, it is preferable to add titanium oxide having a high dielectric constant or borosilicate glass balloon having a low dielectric constant. Aluminum hydroxide and magnesium hydroxide are preferably added for flame retardancy. These fillers can be used alone or in combination.

The particle size of the filler is preferably in the range of 0.1 to 100 μm. If it is less than 0.1 μm, the strength may not be sufficiently improved, and if it exceeds 100 μm, unevenness may occur on the surface of the cured product or a starting point of dielectric breakdown. For the above reason, the particle size range is preferably 0.1 to 60 μm.

The addition amount of the crosslinking component, the high molecular weight substance and the filler of the resin composition of the present invention is 5 to 95 parts by weight of the crosslinking component, 95 to 5 parts by weight of the high molecular weight component, and the total amount of the resin component. The amount of the filler is preferably 70 to 5 parts by weight with respect to 100 parts by weight.

Within the above composition range, the composition can be adjusted according to the purpose of improving the strength, reducing the coefficient of thermal expansion, adjusting the dielectric constant, reducing the weight, and roughening the surface to improve the adhesion with the plated wiring. . As a more preferable composition range, the crosslinking component is 5
0 to 95 parts by weight, 50 to 5 parts by weight of the high molecular weight substance, and 70 to 5 parts by weight of the filler. As a result, even if a high molecular weight polymer having no crosslinkability is selected, it is possible to suppress the reduction in solvent resistance of the cured product.

The resin composition of the present invention can be cured only by heating without adding a curing catalyst. However, a curing catalyst capable of polymerizing and crosslinking a styrene group may be added for the purpose of improving curing efficiency. it can. Since the residue of the curing catalyst may adversely affect the dielectric properties, it is desirable to set the total amount of the resin component to 100 parts by weight and 0.0005 to 10 parts by weight. Within this range, the polymerization and crosslinking reaction of the styrene group can be promoted and a cured product can be obtained at a low temperature.

An example of a curing catalyst that produces a cation or radical active species capable of polymerizing and crosslinking a styrene group by heat or light is shown below.

Cationic catalysts include BF4 and PF
6, AsF6, SbF6 as a counter anion diallyl iodonium salts, triallyl sulfonium salts, aliphatic sulfonium salts and Asahi Denka Kogyo SP-70,17.
2, CP-66, Nippon Soda CI-2855, 282
3. Commercial products such as SI-100L and SI-150L manufactured by Sanshin Chemical Industry can be used.

As the radical polymerization catalyst, benzoin compounds such as benzoin and benzoinmethyl, acetophenone compounds, acetophenone compounds such as 2,2-dimethoxy-2-phenylacetophenone compounds, thioxanthones such as thioxanthone compounds and 2,4-diethylthioxanthone compounds. Compounds, 4,4-diazidochalcone, 2,6-bis (4-azidobenzal) cyclohexanone, bisazido compounds such as 4,4-diazidobenzophenone, azobisisobutylnitrile, 2,2-azobispropane,
Azo compounds such as m, m′-azoxystyrene and hydrazone, 2,5-dimethyl-2,5-di (t-butylperoxy) hexane, 2,5-dimethyl-2,5-di (t- Examples thereof include butylperoxy) hexyne-3 and organic peroxides such as dicumyl peroxide.

Particularly, it is desirable to add an organic peroxide or a bisazide compound capable of causing hydrogen abstraction of a compound having no functional group and forming a bridge between the crosslinking component and the high molecular weight compound.

A polymerization inhibitor may be added to the resin composition of the present invention in order to increase storage stability. The amount added is preferably within a range that does not significantly impair the dielectric properties and the reactivity during curing, and the total amount of the resin components is 100 parts by weight, and
It is desirable that the amount be 0005 to 5 parts by weight. Within this range, unnecessary crosslinking reaction during storage can be suppressed, and no significant curing trouble is brought about during curing.

Examples of the polymerization inhibitor include hydroquinone,
p-benzoquinone, chloranil, trimethylquinone, 4
Examples thereof include quinones such as -t-butylpyrocatechol and aromatic diols.

The resin composition of the present invention is liquid, and the cured product has a low dielectric constant and a low dielectric loss tangent, and therefore can be suitably used as an embedding resin or an overcoat resin for electric circuits of various high frequency devices. A specific example is application to a potting resin used for embedding a gold wire wiring of an LSI.

Next, the present invention will be specifically described with reference to Examples and Comparative Examples. In the following description, “parts” means “parts by weight” unless otherwise specified.

Table 1 shows Examples 1 to 6 of the resin composition of the present invention.
And the compositions and characteristics of Comparative Examples 1 to 4. Further, the names of the reagents used in the examples and the comparative examples, the synthesis method, the varnish preparation method, and the cured product evaluation method will be described.

[0049]

[Table 1] (1) 1,2-bis (vinylphenyl) ethane (BVP
Synthesis of E) 1,2-bis (vinylphenyl) ethane (BVPE) was synthesized by a known method. Granular magnesium for Grignard reaction (manufactured by Kanto Kagaku) in a 500 ml three-necked flask 5.
36 g (220 mmol) was taken, and a dropping funnel, a nitrogen introducing tube, and a septum cap were attached.

Under a nitrogen stream, the whole system was heated and dehydrated with a dryer while stirring the magnesium particles with a stirrer. 300 ml of dry tetrahydrofuran was taken in a syringe and injected through a septum cap.

After cooling the solution to −5 ° C., vinyl benzyl chloride (VBC, manufactured by Tokyo Kasei) 3 using a dropping funnel.
0.5 g (200 mmol) was added dropwise over about 4 hours. After the dropping was completed, stirring was continued at 0 ° C. for 20 hours. After completion of the reaction, the reaction solution was filtered to remove residual magnesium, and concentrated with an evaporator. Dilute the concentrated solution with hexane,
It was washed once with a 3.6% aqueous hydrochloric acid solution and three times with pure water, and then dehydrated with magnesium sulfate. The dewatered solution was passed through a short column of silica gel (Wako gel C300 manufactured by Wako Pure Chemical Industries) / hexane for purification, and vacuum dried to obtain BVPE.

The BVPE obtained is a mixture of m-m body, m-p body (liquid) and p-p body (crystal), and the yield is 9
It was 0%.

When the structure was examined by 1H-NMR, the value was in agreement with the literature value (6H-vinyl: α-2.
H, 6.7, β-4H, 5.7, 5.2; 8H-aromatic: 7.1-7.35; 4H-methylene: 2.9).
This BVPE was used as the crosslinking component.

(2) Purification of Liquid Crosslinking Component BVPE synthesized previously was dissolved in methanol and recrystallized. Solid components are removed by filtration, and the filtrate is concentrated,
It was vacuum dried to collect liquid BVPE of m-m body and m-p body. The yield was 66%.

(3) Names of Other Reagents PDMS: Aldrich, poly (dimethylsiloxane-co-diphenylsiloxane) -terminated vinyl modified; Liquid polymer PBD: Aldrich, poly-1,4-butadiene;
Liquid high molecular weight substance DVB: Wako Pure Chemical Industries, Ltd., divinylbenzene; Crosslinking component 25B of Comparative Example 4: Aldrich, dicumyl peroxide; Curing catalyst YS-10: Shikoku Kasei, aluminum borate whiskers (fiber diameter 0.5 to 0.5) 1.0 μm, fiber length 10 to 30 μm) Z-36: Tokai Kogyo, borosilicate glass balloon (average particle size 56 μm) (4) Preparation method of varnish High molecular weight substance of predetermined amount, crosslinking component, curing catalyst, filler Was mixed and the curing catalyst and the filler were dissolved and dispersed by stirring at about 50 ° C. to prepare a solventless varnish.

(5) Production of Resin Plate A varnish was produced by injecting and sealing between two glass plates having Teflon (registered trademark) spacers attached, heating and curing. Heating conditions are 120 ° C / 30 minutes, 150 ° C / 30
Minutes, 180 ° C./100 minutes multi-step heating. The resin plate was 70 mm × 70 mm × 1 mm.

(6) Measurement of dielectric constant and dielectric loss tangent The dielectric constant and dielectric loss tangent were measured at a value of 10 GHz by a cavity resonance method (Agilent Technology 8722ES type network analyzer, Kanto Electronics Application Development cavity resonator).

(7) Glass transition temperature (Tg) Tg was determined from the peak position of tan δ using a DVA-200 viscoelasticity measuring device (DMA) manufactured by IT Measurement and Control. The sample shape was 1 mm × 1 mm × 20 mm, the distance between fulcrums was 15 mm, and the temperature rising rate was 5 ° C./min.

Comparative Example 1 The cured product of PDMS alone had a Tg of −50 ° C. or lower and was a very soft cured product.
Dielectric constant is relatively low at 2.67, but dielectric loss tangent is 0.0
The big point was 278, which was a problem.

[Comparative Example 2] PBD has a low dielectric constant of 2.3 and a low dielectric loss tangent of 0.0091, but has a problem that it is hard to cure. Since the cured product was liquid, Tg could not be measured.

[Comparative Example 3] BVPE containing a crystalline component did not exhibit fluidity unless heated to about 50 ° C. The properties of the cured product are: dielectric constant 2.56, dielectric loss tangent 0.0017, Tg
Was 400 ° C. or higher.

Comparative Example 4 Although divinylbenzene, which has been conventionally used as a cross-linking component of a low dielectric loss tangent resin material, is liquid at room temperature, cracking occurred during curing and during cooling after curing. Therefore, the cured product could not be evaluated.

Example 1 This example is a resin composition comprising PDMS which is a high molecular weight substance and liquid BVPE which is a crosslinking component. By using a liquid compound as both components, it was possible to impart fluidity at room temperature.

By adding liquid BVPE, the cured product had a dielectric constant of 2.60 and a dielectric loss tangent of 0.0160.
The dielectric constant and the dielectric loss tangent were lower than those of Comparative Example 1 in which PMDS was used alone. The cured product was flexible and had a Tg of -50 ° C or lower.

[Examples 2 to 4] Examples 2 to 4 are resin compositions in which the compounding ratio of PBD which is a high molecular weight substance and liquid BVPE which is a crosslinking component is changed. By using a liquid compound for both components, it was possible to impart fluidity at room temperature. The cured product was solid because it contained a crosslinking component.

Further, the addition of liquid BVPE made it possible to reduce the dielectric loss tangent to 0.004 to 0.0019, which is lower than the value of Comparative Example 2 of PBD alone. Liquid BVP
With the increase of E, the value of dielectric loss tangent decreased and the value of dielectric constant slightly increased. Tg was -30 ° C.

Example 5 This example is a resin composition obtained by adding a glass balloon (Z-36) to the resin composition of Example 4. By adding a glass balloon,
It has become possible to reduce the dielectric constant to 2.15 without increasing the dielectric loss tangent.

Example 6 This example is a resin composition containing liquid BVPE and aluminum borate whiskers (YS-10). The resin composition did not require the addition of a curing catalyst and could be cured only by heating. The cured product had a dielectric constant of 2.65 and a dielectric loss tangent of 0.0015, and had a Tg of 400 ° C. or higher.

Example 7 Next, an example of manufacturing a semiconductor device using the resin composition of the present invention as an insulating layer will be described with reference to FIG.

FIG. 1A is a schematic sectional view in which a shield for preventing liquid leakage is formed around the IC of a semiconductor device manufactured by a wire bonding method.

FIG. 1B: The low dielectric loss tangent resin composition of Example 2 was dropped (potting) in order to protect the wire wiring, and 120 ° C./30 under vacuum (about 5 mmHg).
FIG. 5 is a schematic cross-sectional view of the resin cured by multi-step heating for 150 minutes, 150 ° C./30 minutes, 180 ° C./100 minutes. No residual air bubbles around the wire wiring, foaming of the resin composition, disconnection of the wire wiring, short circuit, or the like occurred.

FIG. 1 (C): Corresponding to a high frequency signal produced by potting a sealing material containing an epoxy resin as a main component on a cured product of a low dielectric loss tangent resin composition and curing at 180 ° C./30 minutes FIG. 3 is a schematic cross-sectional view of the manufactured semiconductor device. In this semiconductor device, since the periphery of the wiring is covered with an insulating layer having a low dielectric constant and a low dielectric loss tangent, the electric signal loss is small.

[0073]

According to the present invention, a low dielectric loss tangent resin composition containing a specific polyfunctional styrene compound and a filler or a high molecular weight substance and having fluidity at room temperature can be obtained.

Since the present resin composition is in a liquid state, it is easy to coat wiring having a complicated shape such as gold wire wiring,
By using the present resin composition as an insulator, a semiconductor device having a low dielectric loss can be easily manufactured.

[Brief description of drawings]

FIG. 1 is a schematic cross-sectional view of a semiconductor device manufactured by a wire bonding method.

[Explanation of symbols]

1 ... Shield, 2 ... Substrate electrode, 3 ... Substrate, 4 ... Gold wire wiring, 5 ... Aluminum electrode, 6 ... IC chip, 7 ... Die bond resin, 8 ... Low dielectric loss tangent resin cured product, 9 ... Epoxy resin cured product.

─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. ⁷ Identification code FI Theme Coat (reference) H01L 23/31 (72) Inventor Keiro Ishikawa 7-1 Omika-cho, Hitachi-shi, Ibaraki Stock company Hitachi, Ltd. Hitachi Research Laboratory (72) Inventor Takao Miwa 7-1, Omika-cho, Hitachi City, Ibaraki Prefecture Hitachi Ltd. Hitachi Research Laboratory's F-term (reference) 4J011 PA03 PA07 PA15 PB22 PC02 PC08 4J026 AA45 AA68 AB44 BA45 DB05 DB11 DB13 FA09 GA06 4M109 AA01 BA03 CA02 DB09 EA01 EB11 EC07 5G305 AA07 AB10 BA12 BA13 BA15 CA02 CA07 CA08 CA26 CC01 CC02 CC03 CC12 CC14 CD01

Claims (9)

[Claims] 1. A general formula: (However, R is a hydrocarbon skeleton which may have a substituent,
R1 is any one of hydrogen, methyl, and ethyl, m is an integer of 1 to 4, and n is an integer of 2 or more), and includes a cross-linking component having a plurality of styrene groups. A low dielectric loss tangent resin composition containing at least one of the agents and having fluidity at room temperature. 2. The low dielectric loss tangent resin composition according to claim 1, wherein the cross-linking component is liquid at room temperature and the high molecular weight substance is liquid. 3. The low dielectric constant according to claim 2, wherein the high molecular weight substance is a resin containing at least one selected from butadiene, a polymer containing an acrylate ester, and a polysiloxane which may have a substituent. Tangent resin composition. 4. The filler has an average particle size of 0.1 to 100 μm.
The low dielectric loss tangent resin composition according to claim 1, containing at least one selected from magnesium hydroxide, aluminum hydroxide, titanium oxide, silicon oxide, borosilicate glass, aluminum borate, and carbon. 5. The low dielectric loss tangent resin composition according to claim 1, comprising at least one of a curing catalyst capable of polymerizing and crosslinking a styrene group, and a polymerization inhibitor suppressing polymerization and crosslinking of a styrene group. 6. The total amount of the resin components is 100 parts by weight, the curing catalyst is 0.0005 to 10 parts by weight, and the polymerization inhibitor is 0.0.
The low dielectric loss tangent resin composition according to claim 5, comprising 005 to 5 parts by weight. 7. A cured product obtained by curing the low dielectric loss tangent resin composition according to any one of claims 1 to 6. 8. An insulator obtained by curing the low dielectric loss tangent resin composition according to any one of claims 1 to 6. 9. A semiconductor device using a cured product of the low dielectric loss tangent resin composition according to claim 1 as an insulator.