JP2003209228A5 - - Google Patents

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Publication number
JP2003209228A5
JP2003209228A5 JP2002321358A JP2002321358A JP2003209228A5 JP 2003209228 A5 JP2003209228 A5 JP 2003209228A5 JP 2002321358 A JP2002321358 A JP 2002321358A JP 2002321358 A JP2002321358 A JP 2002321358A JP 2003209228 A5 JP2003209228 A5 JP 2003209228A5
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002321358A
Other languages
Japanese (ja)
Other versions
JP2003209228A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2002321358A priority Critical patent/JP2003209228A/ja
Priority claimed from JP2002321358A external-priority patent/JP2003209228A/ja
Publication of JP2003209228A publication Critical patent/JP2003209228A/ja
Publication of JP2003209228A5 publication Critical patent/JP2003209228A5/ja
Pending legal-status Critical Current

Links

JP2002321358A 2001-11-07 2002-11-05 磁気記憶装置及びその製造方法 Pending JP2003209228A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002321358A JP2003209228A (ja) 2001-11-07 2002-11-05 磁気記憶装置及びその製造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2001342289 2001-11-07
JP2001-342289 2001-11-07
JP2002321358A JP2003209228A (ja) 2001-11-07 2002-11-05 磁気記憶装置及びその製造方法

Publications (2)

Publication Number Publication Date
JP2003209228A JP2003209228A (ja) 2003-07-25
JP2003209228A5 true JP2003209228A5 (cg-RX-API-DMAC10.html) 2006-04-06

Family

ID=27666972

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002321358A Pending JP2003209228A (ja) 2001-11-07 2002-11-05 磁気記憶装置及びその製造方法

Country Status (1)

Country Link
JP (1) JP2003209228A (cg-RX-API-DMAC10.html)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2867300B1 (fr) * 2004-03-05 2006-04-28 Commissariat Energie Atomique Memoire vive magnetoresistive a haute densite de courant
JP4951864B2 (ja) * 2005-03-02 2012-06-13 Ｔｄｋ株式会社 磁気検出素子
US7538389B2 (en) * 2005-06-08 2009-05-26 Micron Technology, Inc. Capacitorless DRAM on bulk silicon
US7515457B2 (en) * 2006-02-24 2009-04-07 Grandis, Inc. Current driven memory cells having enhanced current and enhanced current symmetry
JP2007317824A (ja) 2006-05-25 2007-12-06 Tdk Corp 磁気抵抗効果素子およびその製造方法、ならびに薄膜磁気ヘッド、ヘッドジンバルアセンブリ、ヘッドアームアセンブリおよび磁気ディスク装置
US7936596B2 (en) * 2008-02-01 2011-05-03 Qualcomm Incorporated Magnetic tunnel junction cell including multiple magnetic domains

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