JP2003209110A - Method of manufacturing metal oxide nitride film, and insulated gate fet and method of manufacturing the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To improve the performance of an insulated gate FET by providing a metal oxide nitride film which becomes a material for a gate insulation film for suppressing the penetration of boron, and then forming a gate insulation film by a method of manufacturing the metal oxide nitride film. <P>SOLUTION: A method of manufacturing an insulated gate FET comprises a process of forming a metal layer by the chemical absorption of a metal element of a substrate by introducing a first reactant containing the metal element by 'the introduction of the first reactant containing metal element' 03, and then forming an oxygen layer by introducing a second reactant containing oxygen by 'the introduction of the second reactant containing oxygen' 05 and reacting the second reactant with the first one absorbed by the substrate; and a process of forming a metal layer by the chemical absorption of a metal element by introducing the first reactant containing the metal element by 'the introduction of the first reactant containing metal element' 07, and then forming a nitride layer by introducing a third reactant containing nitrogen by 'the introduction of the third reactant containing nitrogen' 09 and reacting the third reactant with the first reactant absorbed. Both of the processes are conducted using an ALD method. <P>COPYRIGHT: (C)2003,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for producing a metal oxynitride film, an insulated gate field effect transistor and a method for producing the same, and more specifically, depositing a metal layer, an oxygen layer and a nitrogen layer for each atomic layer. The present invention relates to a method for producing a metal oxynitride film, an insulated gate field effect transistor using the metal oxynitride film, and a method for producing the same.

[0002]

2. Description of the Related Art In recent years, MOS (Metal Oxide Semiconduc
The miniaturization of insulated gate field effect transistors, including transistors, is progressing more and more. Along with this, the film thickness of the gate insulating film becomes thinner, and the limit is becoming apparent due to problems such as gate leakage.

Therefore, it has become necessary to increase the dielectric constant of the gate insulating film, and its application to various metal oxide films has been studied. As a method for forming a metal oxide film, chemical vapor deposition (hereinafter referred to as CVD,
mical vapor deposition) method, sputtering method, ALD (Atomic Layer Deposition) method and the like are being studied.

In the miniaturized MOS transistor,
High-concentration N-type polysilicon is used for N-type MOS transistors, and high concentration P-type for P-type MOS transistors.
A surface-channel type is used in which a channel region is provided on the surface of a silicon substrate using type polysilicon.

In the manufacture of this surface channel type MOS transistor, a gate insulating film is formed on the surface of a silicon substrate, and a polysilicon film is formed on the gate insulating film without introducing impurities and processed into a gate electrode shape. Thereafter, a method is used in which impurity ions are simultaneously implanted into the surface of the silicon substrate to be the gate electrode and the source / drain regions, and heat treatment is applied to activate the impurity regions.

[0006]

However, in the case of an N-type MOS transistor, phosphorus is used as the impurities.
Boron is used in the case of a P-type MOS transistor. In a P-type MOS transistor, the diffusion rate of boron is much higher than the diffusion rate of phosphorus, so that boron in the gate electrode penetrates through the gate insulating film when heat treatment for activating impurities is performed. Sometimes diffused into the channel region. As a result, the threshold voltage of the transistor varies, which adversely affects the transistor characteristics. Even when a high-dielectric film is used for the gate insulating film, similarly to the above, boron in the gate electrode penetrates through the gate insulating film and diffuses into the channel region by the heat treatment for activating the impurities, and the threshold voltage of the transistor is increased. The voltage was varied and the transistor characteristics were adversely affected.

[0007]

The present invention is a method for manufacturing a metal oxynitride film, an insulated gate field effect transistor and a method for manufacturing the same, which have been made to solve the above problems.

The first method for producing a metal oxynitride film of the present invention uses an ALD (Atomic Layer Deposition) method,
A step of forming a metal layer and then an oxygen layer, and a step of forming a metal layer and then a nitrogen layer are performed.

That is, in the step of forming a metal layer and then forming an oxygen layer, a first reaction product containing a metal element is introduced into a reaction furnace and a substrate accommodated in the reaction furnace is introduced. A step of chemically adsorbing a metal element to form a metal layer,
A step of introducing an inert gas into the reaction furnace to remove unreacted materials, and a step of introducing a second reactant containing oxygen and reacting it with the first reactant adsorbed on the substrate to form an oxygen layer. Consists of. In addition, in the step of forming the metal layer and then forming the nitrogen layer, the first reactant containing the metal element is introduced into the reaction furnace to chemisorb the metal element on the deposited layer formed on the substrate. To form a metal layer, introducing an inert gas into the reaction furnace to remove unreacted materials, and introducing a third reactant containing nitrogen to react with the adsorbed first reactant. And forming a layer of nitrogen.

In the above first method of manufacturing a metal oxynitride film,
Atomic layer level deposition forms a layer of oxygen on a layer of metal, then a layer of metal, and a layer of nitrogen on this layer of metal, thus forming a defect-free metal oxynitride film. can get.

The second method for producing a metal oxynitride film according to the present invention uses an ALD (Atomic Layer Deposition) method.
A step of forming a metal nitride layer and a step of forming an oxygen layer are performed.

That is, in the step of forming the metal nitride layer, the first reaction product containing the metal element and nitrogen is introduced into the reaction furnace and the first reaction product is placed on the substrate housed in the reaction furnace. Is chemically chemisorbed to form a metal nitride layer. In the step of forming the oxygen layer, a second reactant containing oxygen is introduced into the reaction furnace and reacted with the adsorbed first reactant. Forming a layer of oxygen.

In the second method for producing a metal oxynitride film,
Deposition at the atomic layer level forms a layer of oxygen over the layer of metal nitride, resulting in a defect-free metal oxynitride film.

The insulated gate field effect transistor of the present invention is an insulated gate field effect transistor in which a gate electrode is formed on a semiconductor region via a gate insulating film, and the gate insulating film is formed by an ALD method. The aluminum oxynitride film.

In the above insulated gate field effect transistor, the gate insulating film is a dense insulating film because it is made of an aluminum oxynitride film formed by the ALD method. Therefore, during the activation heat treatment of impurities, boron in the gate electrode is prevented from penetrating into the semiconductor region where the channel is formed, so that the insulated gate field effect transistor has a suppressed leakage current, Further, the variation in threshold voltage is small and the reliability is high.

A method of manufacturing an insulated gate field effect transistor according to the present invention is a method of manufacturing an insulated gate field effect transistor in which a gate electrode is formed on a silicon substrate via a gate insulating film. The step of forming is a step of forming a layer of aluminum atoms and then forming a layer of oxygen atoms by using an ALD (Atomic Layer Deposition) method, and a step of forming a layer of aluminum atoms and then forming a layer of nitrogen atoms. And a step of forming a layer.

That is, in the step of forming a layer of aluminum atoms and then forming a layer of oxygen atoms, the first reactant containing aluminum is introduced into the reaction furnace and the substrate contained in the reaction furnace is introduced. To chemically adsorb aluminum to form a layer of aluminum atoms, to introduce an inert gas into the reaction furnace to remove unreacted materials, and to introduce a second reactant containing oxygen to the substrate. Reacting with the adsorbed first reactant to form an oxygen layer. The step of forming a layer of aluminum atoms and then forming a layer of nitrogen atoms includes introducing a first reactant containing aluminum into a reaction furnace to chemically adsorb aluminum on the deposited layer formed on the substrate. To form a layer of aluminum atoms, a step of introducing an inert gas into the reaction furnace to remove unreacted materials, and a third reactant containing nitrogen introduced and reacted with the adsorbed first reactant. And forming a layer of nitrogen.

In the above-described method for manufacturing an insulated gate field effect transistor, since a defect-free aluminum oxynitride film is formed, boron in the gate electrode forms a channel in a semiconductor region even if impurity activation heat treatment is performed. Is prevented from penetrating. Therefore, it becomes possible to manufacture a highly reliable insulated gate field effect transistor in which leakage current is suppressed, variation in threshold voltage is small.

A method of manufacturing an insulated gate field effect transistor according to the present invention is a method of manufacturing an insulated gate field effect transistor in which a gate electrode is formed on a silicon substrate via a gate insulating film. The forming step uses an ALD (Atomic Layer Deposition) method,
The step of forming a layer of aluminum nitride and the step of forming a layer of oxygen are repeated to form an aluminum oxynitride film.

That is, in the step of forming the layer of aluminum nitride, the first reaction product containing aluminum and nitrogen is introduced into the reaction furnace and the first reaction product is placed on the substrate housed in the reaction furnace. To form a layer of aluminum nitride. The step of forming an oxygen layer includes the step of introducing a second reactant containing oxygen into the reaction furnace and reacting it with the adsorbed first reactant.

In the above-described method of manufacturing an insulated gate field effect transistor, since a defect-free aluminum oxynitride film is formed, boron in the gate electrode forms a channel in the semiconductor region even if the impurity activation heat treatment is performed. Is prevented from penetrating. Therefore, it becomes possible to manufacture a highly reliable insulated gate field effect transistor in which leakage current is suppressed, variation in threshold voltage is small.

[0022]

BEST MODE FOR CARRYING OUT THE INVENTION First, an example of a reaction furnace of an ALD (Atomic Layer Deposition) apparatus used in the method for producing a metal oxynitride film of the present invention will be described with reference to the schematic sectional view of FIG.

As shown in FIG. 4, the reactor 2 of the ALD apparatus is used.
0 has the following configuration. That is, pipes 21 a, 21 b, 2 for introducing the reaction gas are provided above the reaction furnace 20.
A gas switching valve 22 to which 1c is connected is installed. A gas introduction passage 23 is provided in the gas switching valve 22.
A shower head 24 that introduces a reaction gas into the reaction furnace 20 via the above is installed in the reaction furnace 20. Reactor 20
At a position facing the shower head 22 in the inside, a stage 25 on which a substrate 31 to be processed is placed is installed, for example, so as to be vertically movable. An exhaust port 26 is formed in the lower part of the reaction furnace 20.

In the reaction furnace 20 of the ALD apparatus,
Although not shown, a gate valve for transporting the substrate 31 to be processed into the reaction furnace 20, a pump for maintaining a vacuum inside the reaction furnace 20, and the like are installed.

Next, one embodiment according to the first method for producing a metal oxynitride film of the present invention will be described by taking the method for producing an aluminum oxynitride film as an example and depositing the flowchart of FIG. 1 and FIGS. This will be described with reference to schematic diagrams.

As shown in FIG. 1, first, "injection of substrate to be processed" 1 is performed. That is, A described with reference to FIG.
A target substrate (for example, a silicon substrate) 31 is introduced into the reaction furnace 20 of the LD device. The substrate 31 to be processed is introduced by opening a gate valve (not shown) of the reaction furnace 20 and transferred onto the stage 25. Then, the gate valve is closed. At this time, the state inside the reaction furnace 20 is heated to about 100 ° C. to 500 ° C., and the pressure inside the reaction furnace 20 reaches the ultimate vacuum pressure. Here, as an example, the furnace temperature was 300 ° C., and the furnace pressure was 1 Pa for introduction.

At this time, as shown in FIG. 2A, the surface of the substrate 31 to be processed is in a state where oxygen (O) is adsorbed.

Thereafter, "purge" 2 is performed. In this purging, the substrate 31 to be processed is sufficiently heated and the substrate 31 to be processed is
After the temperature becomes uniform, an inert gas such as argon gas is introduced into the reaction furnace 20 from the shower head 24 to sufficiently purge the reaction furnace 20. The gas flow rate at this time is set to about 2000 cm ³ / min. However, regarding the purging of the inert gas, the purging time, the number of times, the gas flow rate, etc. are not particularly specified.

After the purging of the inert gas is completed,
According to "Introduction of the first reactant containing a metal element" 3,
Trimethylaluminum (T
MA) from the shower head 24 into the reaction furnace 20.
It The state of the substrate 31 to be processed at this time is (2) in FIG.
As shown in FIG.₃)
₃] Is adsorbed.

Then, "removal of unreacted substances" 4 is performed. In the purging for removing the unreacted substances, the shower head 2
4 to introduce an inert gas into the reaction furnace 20,
Unreacted trimethylaluminum is removed from within 0.
The conditions for purging at this time are as follows: “Purge” 02
The conditions similar to the conditions of are used.

Next, "introduction of the second reactant containing oxygen" 5
Thus, H ₂ O is introduced as the second reactant containing oxygen into the reaction furnace 20 serving as an oxidant. Here, H ₂ O is introduced from the shower head 24. At this time, as shown in (3) of FIG. 2, the surface state of the substrate 31 to be processed is such that the methyl group bonded to aluminum (Al) is replaced with a hydroxyl group and the hydroxyl group (OH) is bonded to aluminum (Al). It will be in the state of doing.

Thereafter, "removal of unreacted substances" 6 is performed. In the purging for removing the unreacted substances, the shower head 2
4 to introduce an inert gas into the reaction furnace 20,
Unreacted H ₂ O is removed from within 0. As the purging condition at this time, the same condition as the condition of the "purge" 02 is used.

After that, trimethylaluminum (TMA) is introduced from the shower head 24 into the reaction furnace 20 as the first reactant containing the metal element by "introduction of the first reactant containing the metal element" 7. At this time, as shown in (1) of FIG. 3, in the state of the substrate 31 to be processed, TMA [Al (CH ₃ ) ₃ ] is adsorbed to the substrate 31 to be processed. That is, H of the hydroxyl group (OH group) is cut off and Al
Combine.

Then, "removal of unreacted substances" 8 is performed. This unreacted material is removed from the shower head 24 through the reactor 2.
0 is purged with an inert gas to remove unreacted trimethylaluminum from the reaction furnace 20. As the purging condition at this time, the same condition as the condition of "Purge" 02 is used.

Then, "introduction of the third reactant containing nitrogen"
9, ammonia (NH ₃ ) is introduced from the shower head 24 into the reaction furnace 20 as the third reactant containing nitrogen. At this time, as shown in (2) of FIG. 3, in the state of the substrate to be processed 31, NH ₂ groups are adsorbed to the substrate to be processed 31.
That is, the methyl group of TMA is replaced with an NH ₂ group,
The NH ₂ group will be bonded.

After that, "removal of unreacted substances" 10 is performed.
In the removal of the unreacted substances, an inert gas is purged from the shower head 24 into the reaction furnace 20 to remove unreacted ammonia from the reaction furnace 20. As the purging condition at this time, the same condition as the condition of "Purge" 02 is used.

Next, if the aluminum oxynitride film has reached the desired film thickness, that is, if the answer is "Yes", the film forming process is performed according to the judgment of "Is the metal oxynitride film a desired film thickness?" When the process is completed and the desired film thickness is not reached, that is, “No”, the above “introduction of the first reactant containing the metal element” 03 to “removal of unreacted substances” 10
The above process is set as one cycle and is repeated until the desired film thickness is reached.

In the above manufacturing method, the "introduction of the second reactant containing oxygen" 5 was performed before the "introduction of the third reactant containing nitrogen"9; It is also possible to carry out “introduction of the reactant” 5 after “introduction of the third reactant containing nitrogen” 9. That is, "introduction of second reactant containing oxygen" 5 and "introduction of third reactant containing nitrogen"
It is also possible to replace 9 with.

Then, "introduction of the first reactant containing the metal element" 03 is performed again. Thereby, the first element containing the metal element
Trimethyl aluminum (TMA) is introduced into the reaction furnace 20 from the shower head 24 as a reactant. As for the state of the substrate 31 to be processed at this time, as shown in (6) of FIG. 4, TMA [Al (CH ₃ ) ₃ ] is adsorbed to the substrate 31 to be processed. That is, H of the amide group (NH ₂ group) is cut off, and Al of TMA is bonded to nitrogen from which hydrogen is cut off.

In the above manufacturing method, at least one of oxygen, ozone, plasma-excited oxygen, and plasma-excited dinitrogen monoxide is used as a substitute for H ₂ O used as the second reactant containing oxygen serving as an oxidant. It is possible to use a type of gas. Further, at least one of plasma-excited nitrogen and plasma-excited ammonia can be used as a substitute for the ammonia used as the third reactant containing nitrogen. A similar metal oxynitride film is formed even when the alternative gas is used.

An insulated gate field effect transistor using an aluminum oxynitride film formed by a manufacturing method using the above alternative gas as a gate insulating film uses H ₂ O as a second reactant containing oxygen, N in the third reactant containing nitrogen
It exhibits the same performance as an insulated gate field effect transistor using an aluminum oxynitride film formed by using H ₃ as a gate insulating film.

Next, one embodiment of the second method for producing a metal oxynitride film of the present invention will be described with reference to the flowchart of FIG.

As shown in FIG. 5, first, "injection of substrate to be processed" 51 is performed. That is, the target substrate (for example, a silicon substrate) 31 is introduced into the reaction furnace 20 of the ALD apparatus described with reference to FIG. The substrate 31 to be processed is introduced by opening a gate valve (not shown) of the reaction furnace 20 and transferred onto the stage 25. Then, the gate valve is closed. At this time, the state inside the reaction furnace 20 is heated to about 100 ° C. to 500 ° C., and the pressure inside the reaction furnace 20 reaches the ultimate vacuum pressure. here,
As an example, the furnace temperature was 300 ° C. and the furnace pressure was 1 Pa. No particular change was made to the temperature in the furnace and the subsequent flow.

After that, the "purge" 52 is performed. In this purging, the target substrate 31 is sufficiently heated and the target substrate 3 is processed.
After the temperature of 1 becomes uniform, for example, argon gas is introduced as an inert gas into the reaction furnace 20 from the shower head 24, and the inside of the reaction furnace 20 is sufficiently purged. The gas flow rate at this time is set to about 2000 cm ³ / min.
However, regarding the purging of the inert gas, the purging time, the number of times, the gas flow rate, etc. are not particularly specified.

After the purging of the inert gas is completed,
By "the first introduction of the reactants containing and nitrogen metallic element" 53, reactor dimethyl ether amides aluminum [(CH _{3) 2} AlNH _2] from the shower head 24 as a first reactant containing and nitrogen metallic element Install in 20.

Thereafter, "removal of unreacted substances" 54 is performed.
In the purging for removing the unreacted material, an inert gas is introduced into the reaction furnace 20 from the shower head 24 to remove unreacted trimethylaluminum from the reaction furnace 20. The conditions for purging at this time are the “purging” described above.
The conditions similar to the conditions of 2 are used.

Next, "introduction of the second reactant containing oxygen" 5
2 includes oxygen in the reaction furnace 20 that serves as an oxidant.
H ₂ O is introduced as a reactant. Here, H ₂ O is introduced from the shower head 24. At this time, the surface state of the substrate 31 to be processed is such that the methyl group bonded to aluminum is replaced with a hydroxyl group and the hydroxyl group is bonded to aluminum as shown in (3) of FIG.

After that, "removal of unreacted substances" 06 is performed.
In the purging for removing the unreacted substances, an inert gas is introduced into the reaction furnace 20 from the shower head 24 to remove unreacted H ₂ O from the reaction furnace 20. As the purging conditions at this time, the same conditions as those of the above-mentioned "purge" 2 are used.

Next, if the aluminum oxynitride film has reached the desired film thickness, that is, if the answer is "Yes", the film forming process is performed according to the judgment "Is the metal oxynitride film a desired film thickness?" When the process is completed and the desired film thickness has not been reached, that is, “No”, the above “introduction of the first reactant containing the metal element” 53 to “removal of unreacted substances” 57 is performed.
The above process is set as one cycle and is repeated until the desired film thickness is reached.

In the above production method, dimethylamide aluminum [(CH ₃ ) _{2 is} used as the first reaction product containing a metal element.
AlNH ₂ ], diethyl azide aluminum [(C ₂
H ₅ ) ₂ AlN ₃ ], dimethylmonohydridoaluminium: dimethylethylamine [(CH ₃ ) ₂ AlH: N
(CH ₃ ) ₂ C ₂ H ₅ ] and dimethylethylamine:
Trihydrido aluminum [AlH ₃ : N (CH ₃ ) ₂
It is also possible to use at least one of C ₂ H ₅ ].

In the above manufacturing method, oxygen, ozone, plasma-excited oxygen, and plasma-excited dinitrogen monoxide are used as a substitute gas for H ₂ O used as the second reactant containing oxygen as an oxidant. It is possible to use at least one gas. A similar metal oxynitride film is formed even when the alternative gas is used.

Further, the insulated gate field effect transistor using the aluminum oxynitride film formed by the manufacturing method using the above alternative gas as the gate insulating film uses H ₂ O as the second reactant containing oxygen. It exhibits the same performance as an insulated gate field effect transistor using the formed aluminum oxynitride film as a gate insulating film.

The insulated gate field effect transistor (hereinafter referred to as transistor) of the present invention will be described below. In this transistor, a gate electrode is formed on a semiconductor region where a channel is formed with a gate insulating film interposed. Source / drain regions are formed in the semiconductor regions on both sides of the gate electrode. The gate insulating film is formed of an aluminum oxynitride film formed by the ALD method.

In the above-mentioned insulated gate field effect transistor, the gate insulating film is a dense insulating film because it is made of an aluminum oxynitride film formed by the ALD method. Therefore, it is possible to prevent the boron in the gate electrode from penetrating into the semiconductor region in which the channel is formed during the heat treatment for activating the impurities, so that the insulated gate field effect transistor has a suppressed leakage current.
Further, the variation in threshold voltage is small and the reliability is high.

Further, according to the method of manufacturing a metal oxynitride film described with reference to the flow chart of FIG. 1 and the flow chart of FIG. 5, the gate insulating film of the insulated gate field effect transistor is formed of an aluminum oxynitride film which is a high dielectric film. Can be formed. This makes it possible to form an insulated gate field effect transistor using a gate insulating film made of an aluminum oxynitride film that does not cause boron penetration. The aluminum oxynitride film used for this gate insulating film is preferably formed to a thickness of 1 nm to 10 nm, more preferably 1.5 nm to 7 nm.

[0056]

As described above, according to the first method for producing a metal oxynitride film of the present invention, the oxygen layer is formed on the metal layer by the atomic layer level deposition, and further the metal layer is formed. Since the layer is formed and the nitrogen layer is formed on the metal layer, a defect-free metal oxynitride film can be obtained.

According to the second method for producing a metal oxynitride film of the present invention, since the oxygen layer is formed on the metal nitride layer by atomic layer level deposition, there is no defect in the metal oxynitride film. Can be obtained.

According to the insulated gate field effect transistor of the present invention, since the gate insulating film is the aluminum oxynitride film formed by the ALD method, it is a dense insulating film. Therefore, it is possible to prevent the boron in the gate electrode from penetrating into the semiconductor region where the channel is formed during the heat treatment for activating the impurities, and thus the insulated gate field effect transistor can prevent the impurity diffusion from the gate electrode. In addition, the transistor has stable operation characteristics and high reliability.

According to the method of manufacturing an insulated gate field effect transistor of the present invention, since a defect-free aluminum oxynitride film can be formed, impurities (for example, boron) in the gate electrode can be removed even when the impurity activation heat treatment is performed. It is possible to prevent diffusion into the semiconductor region where the channel is formed. Therefore, it becomes possible to manufacture a good insulated gate field effect transistor having stable operation characteristics and high reliability.

[Brief description of drawings]

FIG. 1 is a flowchart showing an embodiment of a first metal oxynitride film manufacturing method of the present invention.

FIG. 2 is a deposition schematic diagram showing a deposition state of atomic layers.

FIG. 3 is a deposition schematic diagram showing a deposition state of atomic layers. Is.

FIG. 4 is an AL used in the method for producing a metal oxynitride film of the present invention.
It is a schematic structure sectional view showing an example of a reaction furnace of D device.

FIG. 5 is a flowchart showing an embodiment of a second metal oxynitride film manufacturing method of the present invention.

[Explanation of symbols]

3 ... “Introduction of first reactant containing metal element”, 5 ... “Introduction of third reactant containing oxygen”, 7 ... “First containing metal element”
"Introduction of reactant", 9 ... "Introduction of third reactant containing nitrogen"

Claims (14)

[Claims] 1. A step of forming a metal layer and then forming an oxygen layer by using an ALD (Atomic Layer Deposition) method, and a step of forming a metal layer and then forming a nitrogen layer A method for producing a metal oxynitride film, comprising: 2. The step of forming the layer of metal and then forming the layer of oxygen comprises the step of introducing a first reactant containing a metal element into a reaction furnace, and depositing the first reactant on a substrate housed in the reaction furnace. To chemically adsorb the metal element to form a layer of the metal, to introduce an inert gas into the reaction furnace to remove unreacted matter, and to introduce a second reactant containing oxygen. Reacting with the first reactant adsorbed on the substrate to form the layer of oxygen, and the step of forming the layer of metal and then forming the layer of nitrogen is performed in the reaction furnace. Introducing a first reactant containing an element to chemically adsorb the metal element on the deposited layer formed on the substrate to form a layer of the metal; and introducing an inert gas into the reaction furnace. And removing the unreacted material, and introducing the third reactant containing nitrogen and adsorbing it. Reacting with one reactant to form the nitrogen layer, the step of forming the metal layer and then the oxygen layer, and the step of forming the metal layer and then the nitrogen layer. The method for producing a metal oxynitride film according to claim 1, further comprising: a step of introducing an inert gas into the reaction furnace to remove an unreacted material, between the step of forming a layer. 3. The method for producing a metal oxynitride film according to claim 1, wherein the metal layer is a layer of aluminum atoms. 4. Trimethylaluminium is used as the first reactant.
Mu [Al (CH₃)₃ ] To the second reaction product
Element, ozone, H₂O, plasma-excited oxygen and
At least one of the plasma-excited dinitrogen monoxide
Using ammonia, plasma excited by ammonia in the third reactant.
Of nitrogen and plasma excited ammonia
At least one type is used, The claim 2 characterized by the above-mentioned.
A method for manufacturing a metal oxynitride film. 5. A method for producing a metal oxynitride film, which comprises performing a step of forming a metal nitride layer and a step of forming an oxygen layer by using an ALD (Atomic Layer Deposition) method. 6. The step of forming the metal nitride layer comprises introducing a first reactant containing a metal element and nitrogen into a reaction furnace to form the first reaction product on a substrate housed in the reaction furnace. A step of forming a layer of the metal nitride by chemically adsorbing a reactant, wherein the step of forming the layer of oxygen includes introducing a second reactant containing oxygen into the reaction furnace and adsorbing the second reactant. 1 reacting with a reactant to form the oxygen layer, and an inert gas is introduced into the reaction furnace between the step of forming the metal nitride layer and the step of forming the oxygen layer. The method for producing a metal oxynitride film according to claim 5, further comprising a step of introducing and removing an unreacted material. 7. The first reactant is dimethylamide aluminum.
Nium [(CH₃)₂ AlNH₂], Diethyl azide
Aluminum [(C₂H_Five)₂AlN₃], Dimethylmo
Aluminum hydride: dimethylethylamine [(C
H₃)₂AlH: N (CH₃)₂C₂H_Five] And Jime
Cylethylamine: Aluminum trihydride [AlH
₃: N (CH₃)₂C₂H_Five] At least one of
By using oxygen, ozone, and H as the second reactant.₂O, plastic
Zuma-excited oxygen and plasma-excited dimonoxide.
Characterized by using at least one of nitrogen
The method for producing a metal oxynitride film according to claim 6. 8. An insulated gate field effect transistor in which a gate electrode is formed on a semiconductor region via a gate insulating film, wherein the gate insulating film is an ALD (Atomic Layer Depositio).
n) An insulated gate field effect transistor comprising an aluminum oxynitride film formed by the method. 9. A method for manufacturing an insulated gate field effect transistor, wherein a gate electrode is formed on a silicon substrate via a gate insulating film, wherein the step of forming the gate insulating film comprises ALD (Atomic Layer Deposition). A step of forming a layer of aluminum atoms and then forming a layer of oxygen atoms, and a step of forming a layer of aluminum atoms and then forming a layer of nitrogen atoms using the method. Method of manufacturing insulated gate field effect transistor. 10. The step of forming a layer of aluminum atoms and then forming a layer of oxygen atoms comprises: introducing a first reactant containing aluminum into a reaction furnace to form a substrate on the substrate contained in the reaction furnace. To chemically adsorb the aluminum to form a layer of the aluminum atoms, to introduce an inert gas into the reaction furnace to remove unreacted materials, and to introduce a second reactant containing oxygen. Reacting with the first reactant adsorbed on the substrate to form the layer of oxygen, and the step of forming a layer of aluminum atoms and then forming a layer of nitrogen atoms is performed in the reactor. Introducing a first reactant containing aluminum to chemically adsorb the aluminum on the deposited layer formed on the substrate to form a layer of aluminum atoms; and introducing an inert gas into the reaction furnace. Not rebutted And a step of introducing a third reactant containing nitrogen and reacting with the adsorbed first reactant to form the layer of nitrogen. Then, an inert gas is introduced into the reaction furnace between the step of forming a layer of oxygen atoms and the step of forming a layer of aluminum atoms and then forming a layer of nitrogen atoms. 10. The method for manufacturing an insulated gate field effect transistor according to claim 9, further comprising: 11. Trimethyl aluminum [Al (CH ₃ ) ₃ ] is used as the first reactant, and oxygen, ozone, H ₂ O, plasma-excited oxygen and plasma-excited monoxide are used as the second reactant. The insulated gate electric field according to claim 10, wherein at least one of dinitrogen is used, and at least one of ammonia, plasma-excited nitrogen, and plasma-excited ammonia is used as the third reactant. Effect transistor manufacturing method. 12. A method of manufacturing an insulated gate field effect transistor, wherein a gate electrode is formed on a silicon substrate via a gate insulating film, wherein the step of forming the gate insulating film comprises ALD (Atomic Layer Deposition). A method of manufacturing an insulated gate field effect transistor, characterized in that an aluminum oxynitride film is formed by repeatedly performing a step of forming an aluminum nitride layer and a step of forming an oxygen layer by using the method. 13. The step of forming a layer of aluminum nitride comprises the step of first containing aluminum and nitrogen in a reaction furnace.
The step of forming a layer of the aluminum nitride by chemically adsorbing the first reactant on a substrate housed in the reaction furnace by introducing a reactant, the step of forming the layer of oxygen, Introducing a second reactant containing oxygen into the reaction furnace and reacting with the adsorbed first reactant; forming a layer of the aluminum nitride; forming an oxygen layer; 13. The method of manufacturing an insulated gate field effect transistor according to claim 12, further comprising a step of introducing an inert gas into the reaction furnace to remove an unreacted material during the period. 14. The first reaction product contains dimethylamide aluminum [(CH ₃ ) ₂ AlNH ₂ ], diethyl azide aluminum [(C ₂ H ₅ ) ₂ AlN ₃ ], dimethyl monohydrido aluminum: dimethylethylamine [(CH ₃ ) ₂ AlH: N (CH ₃ ) ₂ C ₂ H ₅ ] and dimethylethylamine: trihydridoaluminum [AlH ₃ : N (CH ₃ ) ₂ C ₂ H ₅ ] and using the second reaction. Oxygen, ozone, H ₂
14. The method for manufacturing an insulated gate field effect transistor according to claim 13, wherein at least one of O, plasma-excited oxygen, and plasma-excited dinitrogen monoxide is used.