JP2003208360A - 一時記憶のための不揮発性メモリを含むライトワンスメモリデバイス - Google Patents

一時記憶のための不揮発性メモリを含むライトワンスメモリデバイス

Info

Publication number
JP2003208360A
JP2003208360A JP2002358992A JP2002358992A JP2003208360A JP 2003208360 A JP2003208360 A JP 2003208360A JP 2002358992 A JP2002358992 A JP 2002358992A JP 2002358992 A JP2002358992 A JP 2002358992A JP 2003208360 A JP2003208360 A JP 2003208360A
Authority
JP
Japan
Prior art keywords
memory
write
user data
data
once
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002358992A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003208360A5 (enExample
Inventor
Josh N Hogan
ジョシュ・エヌ・ホーガン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HP Inc
Original Assignee
Hewlett Packard Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hewlett Packard Co filed Critical Hewlett Packard Co
Publication of JP2003208360A publication Critical patent/JP2003208360A/ja
Publication of JP2003208360A5 publication Critical patent/JP2003208360A5/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B20/00—Signal processing not specific to the method of recording or reproducing; Circuits therefor
    • G11B20/02—Analogue recording or reproducing
    • G11B20/04—Direct recording or reproducing
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
    • G06F11/1068—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices in sector programmable memories, e.g. flash disk

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Quality & Reliability (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Signal Processing (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
JP2002358992A 2001-12-19 2002-12-11 一時記憶のための不揮発性メモリを含むライトワンスメモリデバイス Pending JP2003208360A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/025,306 US6904492B2 (en) 2001-12-19 2001-12-19 Write-once memory device including non-volatile memory for temporary storage
US10/025306 2001-12-19

Publications (2)

Publication Number Publication Date
JP2003208360A true JP2003208360A (ja) 2003-07-25
JP2003208360A5 JP2003208360A5 (enExample) 2006-02-02

Family

ID=21825248

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002358992A Pending JP2003208360A (ja) 2001-12-19 2002-12-11 一時記憶のための不揮発性メモリを含むライトワンスメモリデバイス

Country Status (6)

Country Link
US (1) US6904492B2 (enExample)
EP (1) EP1329813A3 (enExample)
JP (1) JP2003208360A (enExample)
KR (1) KR20030051393A (enExample)
CN (1) CN1427413A (enExample)
TW (1) TWI263224B (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008172817A (ja) * 2008-02-18 2008-07-24 Seiko Epson Corp 制御システム及びこのシステムに適合する被制御装置
JP2012234240A (ja) * 2011-04-28 2012-11-29 Buffalo Inc 記憶装置、コンピュータ装置、コンピュータの制御方法、およびコンピュータプログラム

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003151216A (ja) * 2001-11-12 2003-05-23 Hitachi Ltd 情報記録方法、及び情報記録装置
US7398348B2 (en) * 2004-08-24 2008-07-08 Sandisk 3D Llc Method and apparatus for using a one-time or few-time programmable memory with a host device designed for erasable/rewritable memory
JP4901334B2 (ja) * 2006-06-30 2012-03-21 株式会社東芝 メモリコントローラ
KR100842680B1 (ko) * 2007-01-08 2008-07-01 삼성전자주식회사 플래시 메모리 장치의 오류 정정 컨트롤러 및 그것을포함하는 메모리 시스템
US8055982B2 (en) * 2007-02-21 2011-11-08 Sigmatel, Inc. Error correction system and method
US8275927B2 (en) * 2007-12-31 2012-09-25 Sandisk 3D Llc Storage sub-system for a computer comprising write-once memory devices and write-many memory devices and related method
KR101401379B1 (ko) * 2010-10-13 2014-05-30 한국전자통신연구원 낸드 플래시 메모리의 데이터 입출력 방법과 그 방법을 이용한 임베디드 시스템
US9424126B2 (en) * 2013-09-03 2016-08-23 Kabushiki Kaisha Toshiba Memory controller
DE102020108101A1 (de) * 2020-03-24 2021-09-30 Pilz Gmbh & Co. Kg Vorrichtung zur Speicherung von Daten in einem nichtflüchtigen Speicher

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5379250A (en) * 1993-08-20 1995-01-03 Micron Semiconductor, Inc. Zener programmable read only memory
WO1999038170A1 (en) 1998-01-21 1999-07-29 Sony Corporation Encoding method and memory device
US6343341B1 (en) * 1999-08-20 2002-01-29 Microsoft Corporation Efficient access to variable-length data on a sequential access storage medium
WO2001020458A1 (en) * 1999-09-13 2001-03-22 Advanced Technology Materials, Inc. A single chip embedded microcontroller having multiple non-volatile erasable proms sharing a single high voltage generator
US6839504B1 (en) 1999-09-30 2005-01-04 Matsushita Electric Industrial Co., Ltd. Information recording medium and system controller
AU2001275040A1 (en) 2000-05-30 2001-12-11 Dataplay, Inc. Defect management system for write-once storage disk
JP2002073424A (ja) * 2000-08-31 2002-03-12 Mitsubishi Electric Corp 半導体装置、端末装置および通信方法
US6684289B1 (en) * 2000-11-22 2004-01-27 Sandisk Corporation Techniques for operating non-volatile memory systems with data sectors having different sizes than the sizes of the pages and/or blocks of the memory

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008172817A (ja) * 2008-02-18 2008-07-24 Seiko Epson Corp 制御システム及びこのシステムに適合する被制御装置
JP2012234240A (ja) * 2011-04-28 2012-11-29 Buffalo Inc 記憶装置、コンピュータ装置、コンピュータの制御方法、およびコンピュータプログラム

Also Published As

Publication number Publication date
CN1427413A (zh) 2003-07-02
US20030115404A1 (en) 2003-06-19
EP1329813A3 (en) 2004-06-23
TW200301486A (en) 2003-07-01
EP1329813A2 (en) 2003-07-23
TWI263224B (en) 2006-10-01
KR20030051393A (ko) 2003-06-25
US6904492B2 (en) 2005-06-07

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