JP2003197830A - Optical semiconductor sealing unsaturated polyester resin composition, and optical semiconductor device sealed therewith - Google Patents

Optical semiconductor sealing unsaturated polyester resin composition, and optical semiconductor device sealed therewith

Info

Publication number
JP2003197830A
JP2003197830A JP2001399115A JP2001399115A JP2003197830A JP 2003197830 A JP2003197830 A JP 2003197830A JP 2001399115 A JP2001399115 A JP 2001399115A JP 2001399115 A JP2001399115 A JP 2001399115A JP 2003197830 A JP2003197830 A JP 2003197830A
Authority
JP
Japan
Prior art keywords
polyester resin
unsaturated polyester
optical semiconductor
resin composition
acid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001399115A
Other languages
Japanese (ja)
Inventor
Masahito Akiyama
仁人 秋山
Maki Sugawara
麻紀 菅原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Bakelite Co Ltd
Original Assignee
Sumitomo Bakelite Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Bakelite Co Ltd filed Critical Sumitomo Bakelite Co Ltd
Priority to JP2001399115A priority Critical patent/JP2003197830A/en
Publication of JP2003197830A publication Critical patent/JP2003197830A/en
Pending legal-status Critical Current

Links

Abstract

<P>PROBLEM TO BE SOLVED: To provide an optical semiconductor sealing unsaturated polyester resin composition superior in transparency in low wavelength lights, an ultraviolet rays resistance deterioration, resistance solder properties; and to provide an optical semiconductor device sealed with the cure matter. <P>SOLUTION: In an optical semiconductor sealing unsaturated polyester resin composition and an optical semiconductor device sealed with the cure matter, an unsaturated polyester resin composition is obtained by polymerizing an unsaturated acid component (a) selected from a maleic acid, a fumaric acid, and an anhydride thereof; and a diol component (b) selected from an aliphatic or alicyclic dihydric alcohol, and includes an unsaturated polyester resin of 100 parts by weight which includes α,β-ethylene unsaturated radical derived from the (a) component of 1 mol or more per weight 1 kg; and an organic peroxide (B) of 0.1 to 10 parts by weight. A light transmissivity is 90% or more in an optical path length 1 mm in an area of wavelength 380 to 400 nm and a softening point is 55°C to 120°C. <P>COPYRIGHT: (C)2003,JPO

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明は、光半導体封止用不
飽和ポリエステル樹脂組成物、およびそれにより封止さ
れた光半導体装置に関する。
TECHNICAL FIELD The present invention relates to an unsaturated polyester resin composition for encapsulating an optical semiconductor and an optical semiconductor device encapsulated with the unsaturated polyester resin composition.

【0002】[0002]

【従来の技術】従来は、赤外線、赤、黄、緑色を主に開
発されてきた光半導体素子であるが、新しい発光素子の
開発により、効率の良い青色、白色などの、短波長の光
線を発光するLEDが実用化されている。これらのLE
Dの封止に用いる樹脂には、従来の可視光線透過率、即
ち見た目の透明性のみでなく、素子が副次的に発光する
近紫外光に対する透過性を有する必要がある。これは、
短波長の光線は、本来、目には見えず、透過性を必要と
されない波長域であるが、この波長の光線を樹脂が吸収
することにより、樹脂の光分解による物理的強度の劣化
や、着色による可視光の透明性低下を生じるためであ
る。
2. Description of the Related Art Conventionally, optical semiconductor elements have been developed mainly for infrared rays, red, yellow, and green, but by the development of new light emitting elements, efficient light rays of short wavelengths such as blue and white can be generated. LEDs that emit light have been put to practical use. These LE
The resin used for sealing D is required to have not only the conventional visible light transmittance, that is, the apparent transparency, but also the transmittance for the near-ultraviolet light secondary to the device. this is,
The light of short wavelength is originally invisible to the eyes and is in a wavelength range where transparency is not required, but the absorption of the light of this wavelength by the resin causes deterioration of physical strength due to photolysis of the resin, This is because the transparency of visible light is reduced due to coloring.

【0003】また、近年開発された、波長変換型の発光
素子の場合、短波長の光線を素子が発光し、その光線を
波長変換材料、具体的には蛍光材料等を用いて、目に見
える光波長に変換する。このような光半導体装置におい
ては、樹脂中に波長変換材料を分散させることがあり、
その場合、封止樹脂が短波長の光線を透過する必要があ
る。短波長光線の透過率を向上させるには、従来より分
子内に芳香族構造を含まない化合物を用いることがなさ
れており、芳香族構造は、環による紫外線吸収を有する
ことに加え、特に水酸基や不飽和基の置換基を有する、
共役系の延長した芳香環は、近紫外線領域から可視光領
域の光線を吸収する特性があり、短波長光線の透過率を
低減させる原因となっている。
Further, in the case of a wavelength conversion type light emitting element which has been developed in recent years, the element emits light of a short wavelength and the light is visible by using a wavelength conversion material, specifically, a fluorescent material or the like. Convert to light wavelength. In such an optical semiconductor device, the wavelength conversion material may be dispersed in the resin,
In that case, the sealing resin needs to transmit a light beam having a short wavelength. In order to improve the transmittance of short-wavelength light, it has been conventionally used to use a compound that does not contain an aromatic structure in the molecule, and the aromatic structure, in addition to having ultraviolet absorption by the ring, particularly hydroxyl group and Having a substituent of an unsaturated group,
The extended aromatic ring of the conjugated system has a characteristic of absorbing light in the near-ultraviolet region to the visible light region, which is a cause of reducing the transmittance of short-wavelength light.

【0004】また、近年、通信情報機器の小型化、集積
密度の向上、及び製造プロセスの簡略化を図るべく、半
導体産業において表面実装化の要求が急速に高まってき
ている。これはオプトエレクトロニクス分野においても
例外ではなく、光半導体封止用樹脂組成物では、表面実
装におけるIRリフロー等の実装方式を施しても、熱衝
撃によるパッケージのクラックや、素子・リードフレー
ムと樹脂間の剥離を起こさない、良好な耐半田性、およ
び透明性の両立が至上命題である。良好な耐半田性を得
るために耐熱性を向上する手法としては、多官能な化合
物や、剛直な構造を有する化合物を、共重合成分として
導入することが一般的である。特開平11−24092
3号公報では、脂環式骨格を有する不飽和ポリエステル
樹脂とフタル酸ジアリルを併用する技術が開示されてい
る。この組成物の硬化物は、非常に高い耐熱性と、可視
光の透過率を両立できるが、耐紫外線劣化性について
は、フタル酸ジアリルの芳香環のため、十分に向上され
なかった。このように、耐半田性と光透過率について
は、いくつかの技術が成果をあげているが、これに加
え、耐紫外線劣化性も良好なものは、未だ見出されてい
ない。
In recent years, in order to reduce the size of communication information equipment, improve the integration density, and simplify the manufacturing process, the demand for surface mounting is rapidly increasing in the semiconductor industry. This is no exception in the field of optoelectronics, and in the case of resin compositions for optical semiconductor encapsulation, even when mounting methods such as IR reflow in surface mounting are applied, package cracks due to thermal shock and between the element / lead frame and resin It is a top priority to achieve good solder resistance and transparency without peeling. As a method for improving heat resistance to obtain good solder resistance, it is common to introduce a polyfunctional compound or a compound having a rigid structure as a copolymerization component. Japanese Patent Laid-Open No. 11-24092
Japanese Patent Publication No. 3 discloses a technique in which an unsaturated polyester resin having an alicyclic skeleton and diallyl phthalate are used in combination. The cured product of this composition can have both extremely high heat resistance and visible light transmittance, but its resistance to ultraviolet light deterioration was not sufficiently improved due to the aromatic ring of diallyl phthalate. Thus, with respect to solder resistance and light transmittance, some techniques have been successful, but in addition to this, no one having good resistance to ultraviolet ray deterioration has yet been found.

【0005】[0005]

【発明が解決しようとする課題】本発明は、低波長光線
の透明性、耐紫外線劣化性、及び耐半田性に優れる光半
導体封止用不飽和ポリエステル樹脂組成物、およびその
硬化物にて封止された光半導体装置を提供することにあ
る。
DISCLOSURE OF THE INVENTION The present invention provides an unsaturated polyester resin composition for encapsulating an optical semiconductor, which is excellent in transparency of low-wavelength light, ultraviolet ray deterioration resistance, and solder resistance, and a cured product thereof. Another object is to provide a stopped optical semiconductor device.

【0006】[0006]

【課題を解決するための手段】本発明者らは、このよう
な状況に鑑み、鋭意検討の結果、特定範囲の軟化点、お
よび光線透過率を有する、特定構造の不飽和ポリエステ
ル樹脂を用いることにより、透明性と耐半田性を同時に
発現し、且つ半導体封止用樹脂として通常行なわれる固
体成形材料のトランスファー成形に適応可能であること
を見出して、本発明を完成するに至った。
DISCLOSURE OF THE INVENTION In view of such a situation, the inventors of the present invention have made earnest studies, and as a result, use an unsaturated polyester resin having a specific structure, which has a softening point and a light transmittance in a specific range. As a result, they have found that they simultaneously exhibit transparency and solder resistance and are applicable to transfer molding of a solid molding material which is usually carried out as a resin for semiconductor encapsulation, and have completed the present invention.

【0007】すなわち、本発明は、マレイン酸、フマル
酸及びそれらの無水物から選ばれる少なくとも1つ以上
の不飽和酸成分(a)と、脂肪族もしくは脂環式の二価
アルコールから選ばれる少なくとも1つ以上のジオール
成分(b)とを重合してなる不飽和ポリエステル樹脂
(A)100重量部、及び有機過酸化物(B)0.1〜
10重量部を含む不飽和ポリエステル樹脂組成物であっ
て、不飽和ポリエステル樹脂(A)が、重量1kgあた
り1モル以上の(a)成分由来のα,β−エチレン性不
飽和基を含み、波長380〜400nmの領域におい
て、光路長1mmで90%以上の光透過率を有し、55
℃以上120℃未満の軟化点を有する光半導体封止用不
飽和ポリエステル樹脂組成物、およびその硬化物で封止
された青色発光素子、白色発光素子、又は青色レーザー
用受光素子を具備してなる光半導体装置である。
That is, according to the present invention, at least one or more unsaturated acid component (a) selected from maleic acid, fumaric acid and their anhydrides, and at least an aliphatic or alicyclic dihydric alcohol. 100 parts by weight of an unsaturated polyester resin (A) obtained by polymerizing one or more diol components (b), and an organic peroxide (B) 0.1 to
An unsaturated polyester resin composition containing 10 parts by weight, wherein the unsaturated polyester resin (A) contains 1 mol or more of an α, β-ethylenically unsaturated group derived from the component (a) per 1 kg of weight, In the region of 380 to 400 nm, it has a light transmittance of 90% or more at an optical path length of 1 mm, 55
An unsaturated polyester resin composition for encapsulating an optical semiconductor, which has a softening point of ℃ or more and less than 120 ° C., and a blue light emitting element, a white light emitting element, or a light receiving element for a blue laser encapsulated with a cured product thereof. It is an optical semiconductor device.

【0008】前記不飽和ポリエステル樹脂(A)は、脂
肪族もしくは脂環式の飽和二塩基酸及び/又はその無水
物から選ばれる酸成分(c)を含んで重合されることが
好ましい。また、有機過酸化物(B)が、パーオキシケ
タール類であることが好ましい。前記不飽和ポリエステ
ル樹脂組成物は、成形温度における溶融最低粘度が、1
ポアズ以上、300ポアズ未満であることが好ましく、
また、樹脂組成物の硬化物が、365nmの波長で40
mW/cm2の照度の高圧水銀灯を2時間照射後に、波
長380〜400nmの領域において、光路長1mmで
80%以上の光透過率を有することが好ましい。
The unsaturated polyester resin (A) is preferably polymerized by containing an acid component (c) selected from an aliphatic or alicyclic saturated dibasic acid and / or an anhydride thereof. Further, the organic peroxide (B) is preferably a peroxyketal. The unsaturated polyester resin composition has a minimum melt viscosity at the molding temperature of 1
It is preferably poise or more and less than 300 poise,
In addition, when the cured product of the resin composition is 40 at a wavelength of 365 nm.
After irradiation with a high-pressure mercury lamp having an illuminance of mW / cm 2 for 2 hours, it is preferable to have a light transmittance of 80% or more at an optical path length of 1 mm in a wavelength region of 380 to 400 nm.

【0009】[0009]

【発明の実施の形態】本発明に用いる不飽和ポリエステ
ル樹脂(A)は、マレイン酸、フマル酸及びそれらの無
水物から選ばれる少なくとも1つ以上の不飽和酸成分
(a)、脂肪族もしくは脂環式の二価アルコールから選
ばれる少なくとも1つ以上のジオール成分(b)、及
び、必要に応じて脂肪族もしくは脂環式の飽和二塩基酸
及びそれらの無水物から選ばれる酸成分(c)を重合し
てなる不飽和ポリエステル樹脂である。
BEST MODE FOR CARRYING OUT THE INVENTION The unsaturated polyester resin (A) used in the present invention is at least one unsaturated acid component (a) selected from maleic acid, fumaric acid and their anhydrides, an aliphatic or a fatty acid. At least one or more diol components (b) selected from cyclic dihydric alcohols, and, if necessary, acid components (c) selected from aliphatic or alicyclic saturated dibasic acids and their anhydrides. It is an unsaturated polyester resin obtained by polymerizing.

【0010】本発明に用いる不飽和酸成分(a)は、マ
レイン酸、フマル酸、及びそれらの無水物から選ばれる
1種以上であり、2種以上を混合し用いることは何ら差
し支えない。本発明に用いるジオール成分(b)は、脂
肪族、又は脂環式の二価アルコールであり、具体的な例
としてはエチレングリコール、プロピレングリコール、
ジエチレングリコール、1,2−ブタンジオール、ペン
タンジオール、ネオペンチルグリコールなどの脂肪族グ
リコール、水添ビスフェノールA、水添ビスフェノール
Aのアルキレンオキサイド付加物、1,4−シクロヘキ
サンジメタノールなどの脂環式ジオールなどがあげら
れ、1種を用いても、2種以上を混合して用いても良
い。
The unsaturated acid component (a) used in the present invention is one or more selected from maleic acid, fumaric acid, and their anhydrides, and it is no problem to mix and use two or more kinds. The diol component (b) used in the present invention is an aliphatic or alicyclic dihydric alcohol, and specific examples include ethylene glycol, propylene glycol,
Aliphatic glycols such as diethylene glycol, 1,2-butanediol, pentanediol, neopentyl glycol, hydrogenated bisphenol A, alkylene oxide adducts of hydrogenated bisphenol A, and alicyclic diols such as 1,4-cyclohexanedimethanol. And one kind may be used, or two or more kinds may be mixed and used.

【0011】本発明に用いる飽和酸成分(c)について
は、必ずしも含まれていなくても良いが、軟化点や、不
飽和基濃度の調整などの目的で、併用することができ
る。(c)成分は、脂肪族もしくは脂環式の飽和二塩基
酸及びそれらの無水物から選ばれ、(a)成分に該当す
るものはこれに含まれない。具体的には、マロン酸、コ
ハク酸、アジピン酸、セバシン酸などの脂肪族二塩基
酸、ヘキサヒドロフタル酸、1,4−シクロヘキサンジ
カルボン酸、メチルヘキサヒドロフタル酸、テトラヒド
ロフタル酸、ナジック酸などの脂環式二塩基酸、および
それらの無水物が挙げられ、1種を用いても2種以上を
併用しても構わない。
The saturated acid component (c) used in the present invention may not necessarily be contained, but may be used together for the purpose of adjusting the softening point and the concentration of unsaturated groups. Component (c) is selected from aliphatic or alicyclic saturated dibasic acids and their anhydrides, and does not include those corresponding to component (a). Specifically, aliphatic dibasic acids such as malonic acid, succinic acid, adipic acid, sebacic acid, hexahydrophthalic acid, 1,4-cyclohexanedicarboxylic acid, methylhexahydrophthalic acid, tetrahydrophthalic acid, nadic acid, etc. The alicyclic dibasic acids and their anhydrides may be used, and one kind may be used or two or more kinds may be used in combination.

【0012】本発明に用いる不飽和ポリエステル樹脂
(A)の重合には、公知の手法を用いればよく、例え
ば、簡便には、(a)、及び(c)成分として二塩基酸
の無水物を、(b)成分としてジオールを用い、加熱重
合によってポリエステルを得ることができる。また、着
色性の低減や、得られるポリエステルの重合度を均一に
するなどの目的で、(a)、及び(c)成分の酸成分
を、低分子量アルコールやエステル化剤でエステルと
し、これと(b)成分のジオールと反応させ、脱離性分
を除去することでも得ることができる。また、特開平1
1−21439号公報、特開平11−240924号公
報で開示された方法で合成することも可能である。
A known method may be used to polymerize the unsaturated polyester resin (A) used in the present invention. For example, for convenience, dibasic acid anhydrides are used as the components (a) and (c). A polyester can be obtained by heat polymerization using a diol as the component (b). Further, for the purpose of reducing the colorability and making the polymerization degree of the obtained polyester uniform, the acid components of the components (a) and (c) are converted into an ester with a low molecular weight alcohol or an esterifying agent, and It can also be obtained by reacting with the diol which is the component (b) and removing the removable component. In addition, JP-A-1
It is also possible to synthesize by the method disclosed in JP-A 1-214439 and JP-A 11-240924.

【0013】このようにして得られた、不飽和ポリエス
テル樹脂(A)は、(a)成分由来のα,β−エチレン
性不飽和基を、該不飽和ポリエステル樹脂の重量1kg
あたり1モル以上含み、波長380〜400nmの領域
において、光路長1mmで90%以上の光透過率を有
し、軟化点が55℃以上120℃未満であることが必須
である。(a)成分由来のα、β−エチレン性不飽和基
が該濃度範囲において含まれる場合、不飽和ポリエステ
ル樹脂組成物の硬化物は、高い耐熱性を発揮できる。こ
れが樹脂1kg当たり1モル未満であるような場合、具
体的には、(c)成分の二塩基酸を多量に含む場合や、
(a)、及び(b)成分に分子量の大きな化合物を使用
した場合、樹脂の架橋密度の低下により、半田リフロー
に十分なレベルの耐熱性が得られない。
The unsaturated polyester resin (A) thus obtained contains the α, β-ethylenically unsaturated group derived from the component (a) in an amount of 1 kg of the unsaturated polyester resin.
1 mol or more per 1 mol, and in the wavelength range of 380 to 400 nm, it is essential that the optical path length is 1 mm, the light transmittance is 90% or more, and the softening point is 55 ° C. or more and less than 120 ° C. When the α, β-ethylenically unsaturated group derived from the component (a) is contained in the concentration range, the cured product of the unsaturated polyester resin composition can exhibit high heat resistance. When it is less than 1 mol per 1 kg of the resin, specifically, when a large amount of the dibasic acid of the component (c) is contained,
When a compound having a large molecular weight is used as the components (a) and (b), a sufficient level of heat resistance for solder reflow cannot be obtained due to a decrease in the crosslink density of the resin.

【0014】不飽和ポリエステル樹脂(A)の、波長3
80〜400nmの領域における光透過率が、光路長1
mmで90%未満である場合、具体的には、重合時に不
純物の存在などにより、着色した場合などが挙げられる
が、このような場合は光半導体封止に用いても、紫外線
の吸収や、必要な光線の遮断を起こし、光半導体装置が
十分な発光性能を得ることができない。光透過率の測定
は、不飽和ポリエステル樹脂を溶融させ、1mm厚のシ
リコンゴム等のスペーサーを挟んだガラス平行板間に流
し込み、冷却して製作した樹脂板の表面を平滑にして、
1mmの厚みで測定する。測定装置としては、島津自記
分光光度計UV−3100(積分球装置設置型)を用い
れば良い。
Unsaturated polyester resin (A) having a wavelength of 3
The light transmittance in the region of 80 to 400 nm is 1
When it is less than 90% in mm, specifically, it may be colored due to the presence of impurities at the time of polymerization. In such a case, even when it is used for encapsulating an optical semiconductor, it absorbs ultraviolet rays, The required light rays are blocked, and the optical semiconductor device cannot obtain sufficient light emitting performance. The light transmittance is measured by melting an unsaturated polyester resin, pouring it between glass parallel plates with a spacer such as a 1 mm thick silicone rubber sandwiched between them, and cooling the surface of the resin plate to make it smooth,
It is measured at a thickness of 1 mm. A Shimadzu spectrophotometer UV-3100 (integrating sphere device installed type) may be used as the measuring device.

【0015】また、軟化点が55℃未満の場合、常温で
固形の成形材料を得ることが難しく、ハンドリング性が
劣るため、好ましくない。軟化点が120℃を上回る場
合、(A)成分をその他添加剤と溶融混合する際に高温
が必要であり、(B)成分の有機過酸化物の分解が過剰
に進行する恐れがあるため、好ましくない。軟化点の測
定は、従来公知の手法で行なうことができる。具体的に
は、コフラーホットベンチの名称で知られる、温度傾斜
をもつ金属板上に樹脂粉末を散布し、樹脂が溶融し金属
板に固着する点での温度を測り取ることで測定できる。
If the softening point is less than 55 ° C., it is difficult to obtain a solid molding material at room temperature, and the handling property is poor, which is not preferable. If the softening point is higher than 120 ° C., high temperature is required when melt-mixing the component (A) with other additives, and the decomposition of the organic peroxide of the component (B) may proceed excessively. Not preferable. The softening point can be measured by a conventionally known method. Specifically, it can be measured by spraying a resin powder on a metal plate having a temperature gradient, known by the name of Kofler hot bench, and measuring the temperature at the point where the resin melts and sticks to the metal plate.

【0016】本発明に用いる有機過酸化物(B)は、
(A)成分の硬化反応を進めることができるものであれ
ば、その種類に制限はないが、本発明の樹脂組成物の製
造において、(A)成分の軟化点以上の温度で、加熱混
練する場合、混練中に反応が過度に促進し、ゲル化する
ことを防止するため、高温硬化型の過酸化物の利用が好
ましい。有機過酸化物としては、ジクミルパーオキサイ
ド、1,1−ビス(t−ブチルパーオキシ)−3,3,
5−トリメチルシクロヘキサン、ベンゾイルパーオキサ
イド、t−ブチルパーオキシイソプロピルモノカルボネ
ートなどが挙げられ、これらの1種を用いても2種以上
を混合して用いても良い。これらのうち、特にパーオキ
シケタール類を用いた場合、硬化物の着色が少なくなる
ため、好ましい。パーオキシケタール類の例としては、
1,1−ビス(t−ブチルパーオキシ)−3,3,5−
トリメチルシクロヘキサン、1,1−ビス(t−ヘキシ
ルパーオキシ)−3,3,5−トリメチルシクロヘキサ
ン、1,1−ビス(t−ヘキシルパーオキシ)シクロヘ
キサン等が挙げられる。
The organic peroxide (B) used in the present invention is
The type of the component (A) is not limited as long as it can accelerate the curing reaction, but in the production of the resin composition of the present invention, heat kneading is performed at a temperature equal to or higher than the softening point of the component (A). In this case, it is preferable to use a high temperature curable peroxide in order to prevent the reaction from being excessively promoted during kneading and gelation. As the organic peroxide, dicumyl peroxide, 1,1-bis (t-butylperoxy) -3,3,3
5-Trimethylcyclohexane, benzoyl peroxide, t-butyl peroxyisopropyl monocarbonate and the like can be mentioned, and these may be used alone or in combination of two or more. Of these, the use of peroxyketals is particularly preferable because the cured product is less colored. Examples of peroxyketals include:
1,1-bis (t-butylperoxy) -3,3,5-
Examples thereof include trimethylcyclohexane, 1,1-bis (t-hexylperoxy) -3,3,5-trimethylcyclohexane and 1,1-bis (t-hexylperoxy) cyclohexane.

【0017】本発明の光半導体封止用不飽和ポリエステ
ル樹脂組成物には、必要に応じて離型剤、滑剤、酸化防
止剤等、当業者にて公知の添加剤、副資材を組み合わせ
ることは何らさしつかえない。また、共重合性単量体に
ついても、その特性、とりわけ常温でのハンドリング性
と、耐紫外線劣化性を損なわない限り、併用することは
差し支えない。
If necessary, the unsaturated polyester resin composition for encapsulating an optical semiconductor of the present invention may be combined with additives and auxiliary materials known to those skilled in the art such as a release agent, a lubricant, an antioxidant and the like. It doesn't matter. Further, the copolymerizable monomer may be used in combination as long as it does not impair its properties, particularly the handling property at room temperature and the resistance to deterioration by ultraviolet light.

【0018】本発明の光半導体封止用不飽和ポリエステ
ル樹脂組成物において、(B)成分の添加量としては、
(A)成分100重量部に対し、0.1〜10重量部が
好ましい。この範囲を上回ると、硬化時の発熱が過剰と
なり、樹脂が変色しやすくなる。また、この範囲を下回
ると、短時間で十分な硬化性を得ることができない。
In the unsaturated polyester resin composition for optical semiconductor encapsulation of the present invention, the amount of the component (B) added is
0.1 to 10 parts by weight is preferable with respect to 100 parts by weight of the component (A). If it exceeds this range, the heat generated during curing becomes excessive, and the resin tends to discolor. If it is less than this range, sufficient curability cannot be obtained in a short time.

【0019】本発明の光半導体封止用不飽和ポリエステ
ル樹脂組成物の製造方法としては、(A)、(B)成
分、及びその他の成分を混合し、ニーダーや熱ロール、
単軸・二軸押し出し機等の設備により溶融加熱混練する
手法が一般的である。
The method for producing the unsaturated polyester resin composition for encapsulating an optical semiconductor of the present invention comprises mixing the components (A) and (B) and other components, and kneading, heating a roll,
The method of melting, heating, and kneading with equipment such as a single-screw or twin-screw extruder is generally used.

【0020】本発明の光半導体封止用不飽和ポリエステ
ル樹脂組成物は、成形温度における溶融最低粘度が、1
ポアズ以上、300ポアズ未満であることが好ましい。
このような粘度は、高化式フローテスターなどの装置を
用いることで、容易に測定することができる。粘度が1
ポアズ未満である場合、成形時に流動性が大きくなりす
ぎ、多量のバリが生じ、成形作業の効率が低化すること
がある。300ポアズを上回ると、流動性が著しく低く
なり、充填性の悪化やボイドを生じることがある。
The unsaturated polyester resin composition for encapsulating an optical semiconductor of the present invention has a minimum melt viscosity at the molding temperature of 1
It is preferably poise or more and less than 300 poise.
Such a viscosity can be easily measured by using a device such as a Koka type flow tester. Viscosity 1
When it is less than poise, the fluidity becomes too large at the time of molding, a large amount of burr is generated, and the efficiency of the molding operation may be lowered. When it exceeds 300 poises, the fluidity becomes remarkably low, which may cause deterioration of the filling property and voids.

【0021】本発明の光半導体封止用不飽和ポリエステ
ル樹脂組成物が、さらに好適な特性を発揮するために
は、硬化物が、365nmの波長で測定した照度が40
mW/cm2の高圧水銀灯を2時間照射後に、波長38
0〜400nmの領域における光透過率を、光路長1m
mで80%以上有することが好ましい。このような特性
を有する光半導体封止用不飽和ポリエステル樹脂組成物
は、特に低波長の光線を受発光する光半導体装置を封止
した際に、半導体素子が発する低波長光線による劣化が
少なく、長時間に渡り光半導体装置が透過性を維持でき
るために、出力の低下などの、信頼性に関する問題発生
を抑制できる。
In order for the unsaturated polyester resin composition for encapsulating an optical semiconductor of the present invention to exhibit more preferable characteristics, the cured product has an illuminance of 40 measured at a wavelength of 365 nm.
After irradiation with a high pressure mercury lamp of mW / cm 2 for 2 hours, a wavelength of 38
The light transmittance in the range of 0 to 400 nm is determined by the optical path length of 1 m.
It is preferable that m is 80% or more. Unsaturated polyester resin composition for optical semiconductor encapsulation having such characteristics, especially when encapsulating an optical semiconductor device that receives and emits light of a low wavelength, little deterioration due to low wavelength light emitted by the semiconductor element, Since the optical semiconductor device can maintain the transmissivity for a long time, it is possible to suppress the occurrence of reliability problems such as a decrease in output.

【0022】高圧水銀灯による光照射は、通常市販され
ている紫外線照射装置、および高圧水銀灯を用いること
で簡便に行なうことができ、具体的には、ウシオ電機社
製、マルチライトML−251A型紫外線照射装置、及
びUSH−250BY型高圧水銀ランプを用い、サンプ
ル表面での365nmの紫外線の強度が、40mW/c
2となるように紫外線照度測定器を用いて調整するこ
とで行なうことができる。
Light irradiation with a high-pressure mercury lamp can be easily carried out by using a commercially available ultraviolet irradiation device and a high-pressure mercury lamp. Specifically, multi-light ML-251A type ultraviolet light manufactured by Ushio Inc. Using an irradiation device and a USH-250BY type high-pressure mercury lamp, the intensity of ultraviolet light of 365 nm on the sample surface was 40 mW / c.
It can be performed by adjusting with an ultraviolet illuminance measuring device so as to be m 2 .

【0023】また、光透過率の測定は、樹脂単体での測
定と同様の装置で行なうことができる。試験片は、硬化
物を10×30×1mmの板状にし、表面を平滑にして
作成する。この試験片の光透過率が80%より低いと、
本発明の不飽和ポリエステル樹脂組成物であっても、樹
脂の劣化による発光素子の輝度の低下速度が増大する場
合がある。
The light transmittance can be measured by the same device as that used for measuring the resin alone. The test piece is prepared by making a cured product into a plate shape of 10 × 30 × 1 mm and smoothing the surface. When the light transmittance of this test piece is lower than 80%,
Even with the unsaturated polyester resin composition of the present invention, the deterioration rate of the luminance of the light emitting element may increase due to the deterioration of the resin.

【0024】本発明の不飽和ポリエステル樹脂組成物の
硬化物は、光半導体装置の封止に好適であるが、中でも
青色発光素子、白色発光素子、または青色レーザー用受
光素子に対して非常に好適であり、波長変換型の青色、
白色発光素子のような、短波長光線を発光する素子種を
封止した場合、きわめて優れた透明性、耐紫外線劣化
性、耐半田性を有する光半導体装置を提供することがで
きる。
The cured product of the unsaturated polyester resin composition of the present invention is suitable for encapsulating an optical semiconductor device, but is particularly suitable for a blue light emitting element, a white light emitting element, or a light receiving element for a blue laser. And the wavelength conversion type blue,
When an element type that emits short-wavelength light such as a white light emitting element is sealed, it is possible to provide an optical semiconductor device having extremely excellent transparency, resistance to ultraviolet ray deterioration, and resistance to soldering.

【0025】本発明の光半導体封止用不飽和ポリエステ
ル樹脂組成物を用いての封止は、一般的な方法で可能で
あるが、例えば、トランスファー成形法等により、12
0〜200℃の成形温度で、光半導体素子を封止して、
光半導体封止用不飽和ポリエステル樹脂組成物の硬化物
で封止された光半導体装置を得ることができる。
The encapsulation using the unsaturated polyester resin composition for encapsulating an optical semiconductor of the present invention can be carried out by a general method, for example, by a transfer molding method or the like.
At a molding temperature of 0 to 200 ° C., the optical semiconductor element is sealed,
An optical semiconductor device encapsulated with a cured product of an unsaturated polyester resin composition for optical semiconductor encapsulation can be obtained.

【0026】[0026]

【実施例】以下に、本発明について、さらに詳細に説明
するため実施例を示すが、これらに本発明が限定される
ものではない。
The present invention will now be described in more detail with reference to the following examples, which should not be construed as limiting the invention thereto.

【0027】[不飽和ポリエステル樹脂の合成]成分
(a)〜(c)、及び、その他の酸、その他のジオールに
相当する成分を、表1に示した配合割合で混合し、重合
触媒として亜燐酸を添加して、160〜240℃で加熱
反応させた。反応が進行し、所望の軟化点が得られたと
ころで、反応物を取り出し、冷却して不飽和ポリエステ
ル樹脂サンプル(A)〜(I)を、それぞれ得た。な
お、不飽和ポリエステル樹脂(E)の反応は、特開平1
1−240924号公報における不飽和ポリエステル樹
脂(A−2)の合成に記載の手法に従った。また、不飽
和ポリエステル樹脂(G)の反応においては、純度の低
い原料を用いたため、組成及び反応方法は、前記不飽和
ポリエステル樹脂(A)と同じであるが、得られた樹脂
は若干の黄色味がかったものであった。得られた不飽和
ポリエステル樹脂の特性は、軟化点、380〜400n
m光線透過率、及び二重結合含有量で評価した。
[Synthesis of Unsaturated Polyester Resin] Components (a) to (c) and components corresponding to other acids and other diols are mixed in the mixing ratio shown in Table 1 to prepare a sub-polymerization catalyst. Phosphoric acid was added and the mixture was heated and reacted at 160 to 240 ° C. When the reaction proceeded and a desired softening point was obtained, the reaction product was taken out and cooled to obtain unsaturated polyester resin samples (A) to (I), respectively. The reaction of the unsaturated polyester resin (E) is described in JP-A-1.
The method described in the synthesis of unsaturated polyester resin (A-2) in JP-A 1-240924 was followed. Further, in the reaction of the unsaturated polyester resin (G), a raw material having a low purity was used, and therefore the composition and the reaction method are the same as those of the unsaturated polyester resin (A), but the obtained resin is slightly yellow. It was tasty. The characteristics of the obtained unsaturated polyester resin have a softening point of 380 to 400 n.
It was evaluated by the m-ray transmittance and the double bond content.

【0028】[0028]

【表1】 表1中、注1:平均分子量236の、ビスフェノールA
エチレンオキシド付加物、注2:コフラーホットベンチ
法を用いて測定した、注3:1mm厚の注型樹脂板を作
成し、測定した、注4:ヨウ素法により測定した。
[Table 1] In Table 1, Note 1: Bisphenol A having an average molecular weight of 236
Ethylene oxide adduct, Note 2: Measured using the Kofler hot bench method, Note 3: Measured using a cast resin plate having a thickness of 1 mm, Note 4: Measured by the iodine method.

【0029】[実施例1〜5及び比較例1〜3]成分
(A)〜(C)、および重合性単量体に相当する成分を、
表2に示した配合割合で混合し、2本ロールを用いて、
70〜100℃で5分間混練し、得られた混練物シート
を、冷却後粉砕して樹脂組成物を得た。得られた樹脂組
成物を用いて評価を行った。評価方法は以下の通りであ
り、結果は表2にまとめて示す。
[Examples 1 to 5 and Comparative Examples 1 to 3] Components (A) to (C) and components corresponding to the polymerizable monomer were added.
Mix at the blending ratio shown in Table 2, use a two-roll,
The mixture was kneaded at 70 to 100 ° C. for 5 minutes, and the obtained kneaded material sheet was cooled and then pulverized to obtain a resin composition. Evaluation was performed using the obtained resin composition. The evaluation method is as follows, and the results are summarized in Table 2.

【0030】[光透過率の測定]上記で得られた樹脂組
成物のタブレットを、金型温度160℃、注入圧力6.
86MPa、硬化時間90秒の条件でトランスファー成
形をし、30×10×1mmの成形品を得た。この成形
品を、積分球を搭載した分光光度計(島津製作所製自記
分光光度計UV−3100)を用いて、波長380〜4
00nm、厚み1mmの平均光透過率を測定した。 [耐紫外線劣化性の評価]上記の透明性評価用1mm厚
試験片に、ウシオ電機社製、マルチライトML−251
A型紫外線照射装置、及びUSH−250BY型高圧水
銀ランプを用い、サンプル位置での365nmの紫外線
の強度が、40mW/cm2となるように紫外線照度測
定器を用いて調整した光線を、2時間照射した。照射後
に、積分球を搭載した分光光度計(島津製作所製自記分
光光度計UV−3100)を用いて、波長380〜40
0nmの平均光透過率を測定し、耐紫外線劣化性を評価
した。 [溶融粘度の測定]上記で得られた樹脂組成物のタブレ
ット(φ10mm、1.4g)を、島津製作所製高化式
フローテスターCFT−100Dを用いて、荷重30k
g、ノズル0.5mmφ×10mL、温度160℃の条
件で、最低溶融粘度を測定した。 [ガラス転移温度の測定]上記で得られた樹脂組成物の
タブレットを、金型温度160℃、注入圧力6.86M
Pa、硬化時間90秒の条件でトランスファー成形によ
り試験片を成形し、この試験片を、温度150℃の熱風
オーブンで2時間ポストキュアした後、熱膨張計(セイ
コー電子社製TMA120)を用い、5℃/分の昇温速
度で昇温して、試験片の伸び率が急激に変化する温度を
ガラス転移点として測定した。 [耐半田性の評価]上記で得られた樹脂組成物のタブレ
ットを、メラニン樹脂クリーニング材によりクリーニン
グ済みの表面実装用パッケージ(12ピンSOP、4×
5mm、厚み1.2mm、チップサイズは1.5mm×
2.0mm、リードフレームは42アロイ製)金型を用
いて、金型温度160℃、注入圧力6.86MPa、硬
化時間90秒の条件でトランスファー成形し、温度15
0℃の熱風オーブンで、2時間硬化させた。得られた光
半導体パッケージを、温度85℃、相対湿度60%の環
境下で、168時間放置し、その後240℃のIRリフ
ロー処理を行った。処理したパッケージを顕微鏡及び超
音波探傷装置で観察し、クラック、チップと樹脂との剥
離の有無を確認した。クラック及び剥離がある場合は不
良とした。 [耐通電劣化性の評価]上記で得られた樹脂組成物のタ
ブレットを、メラニン樹脂クリーニング材によりクリー
ニング済みのチップ型LEDパッケージ(2.0×1.
0mm、厚み1.6mm、チップは415nmに主発光
ピークを有する、InGaN半導体の青色発光素子)金
型を用いて、金型温度160℃、注入圧力6.86MP
a、硬化時間90秒の条件でトランスファー成形し、温
度150℃の熱風オーブンで、2時間硬化させた。得ら
れた光半導体パッケージを、60mA通電しながら10
00時間放置し、処理後の相対発光強度が、処理前に対
し60%以上を維持しているものを良好、60%に満た
ないものを不良として評価した。
[Measurement of Light Transmittance] A tablet of the resin composition obtained above was used at a mold temperature of 160 ° C. and an injection pressure of 6.
Transfer molding was performed under the conditions of 86 MPa and a curing time of 90 seconds to obtain a molded product of 30 × 10 × 1 mm. Using a spectrophotometer (manufactured by Shimadzu Corp., self-recording spectrophotometer UV-3100) equipped with an integrating sphere, this molded product was measured at wavelengths of 380 to 4
The average light transmittance of 00 nm and a thickness of 1 mm was measured. [Evaluation of resistance to ultraviolet ray deterioration] Multi-light ML-251 manufactured by USHIO INC. Was added to the above-mentioned 1 mm thick test piece for transparency evaluation.
Using an A-type ultraviolet irradiation device and a USH-250BY high-pressure mercury lamp, a light beam adjusted with an ultraviolet illuminance measuring device so that the intensity of the 365 nm ultraviolet light at the sample position is 40 mW / cm 2 is used for 2 hours. Irradiated. After irradiation, using a spectrophotometer (Shimadzu Corporation self-recording spectrophotometer UV-3100) equipped with an integrating sphere, a wavelength of 380 to 40
The average light transmittance of 0 nm was measured to evaluate the resistance to ultraviolet ray deterioration. [Measurement of Melt Viscosity] A tablet (φ10 mm, 1.4 g) of the resin composition obtained above was loaded with a Shimadzu high-performance flow tester CFT-100D at a load of 30 k.
The minimum melt viscosity was measured under the conditions of g, nozzle 0.5 mmφ × 10 mL, and temperature 160 ° C. [Measurement of glass transition temperature] A tablet of the resin composition obtained above was used at a mold temperature of 160 ° C and an injection pressure of 6.86M.
A test piece was formed by transfer molding under the conditions of Pa and a curing time of 90 seconds, and the test piece was post-cured in a hot air oven at a temperature of 150 ° C. for 2 hours, and then a thermal expansion meter (TMA120 manufactured by Seiko Instruments Inc.) was used. The temperature was raised at a heating rate of 5 ° C./min, and the temperature at which the elongation of the test piece suddenly changed was measured as the glass transition point. [Evaluation of Solder Resistance] Tablets of the resin composition obtained above are cleaned with a melanin resin cleaning material for surface mounting package (12-pin SOP, 4 ×
5 mm, thickness 1.2 mm, chip size 1.5 mm ×
2.0 mm, lead frame made of 42 alloy) Using a mold, transfer molding was performed under the conditions of a mold temperature of 160 ° C., an injection pressure of 6.86 MPa, and a curing time of 90 seconds, and a temperature of 15
Cured in a hot air oven at 0 ° C. for 2 hours. The obtained optical semiconductor package was left for 168 hours in an environment of a temperature of 85 ° C. and a relative humidity of 60%, and then subjected to an IR reflow treatment at 240 ° C. The treated package was observed with a microscope and an ultrasonic flaw detector to confirm the presence of cracks and peeling between the chip and the resin. If there was cracking or peeling, it was determined to be defective. [Evaluation of resistance to energization deterioration] A tablet of the resin composition obtained above is a chip type LED package (2.0 × 1.
0 mm, thickness 1.6 mm, chip has main emission peak at 415 nm, blue light emitting device of InGaN semiconductor) Using a mold, mold temperature 160 ° C., injection pressure 6.86 MP
a, transfer molding was performed under the conditions of a curing time of 90 seconds, and cured in a hot air oven at a temperature of 150 ° C. for 2 hours. Apply 10 mA to the obtained optical semiconductor package while applying a current of 60 mA.
The sample was allowed to stand for 00 hours and the relative emission intensity after the treatment was evaluated as good when it was maintained at 60% or more as compared with that before the treatment, and as poor when it was less than 60%.

【0031】[0031]

【表2】 表2中、注1:ダイソー製 重合性単量体(イソフタル
酸ジアリルエステル)、注2:ピーピージー・ジャパン
株式会社製 重合性単量体(ビスエチレングリコールジ
アリルカーボネート)、注3:共栄社化学製 重合性単
量体(ビスフェノールAエポキシのメタクリル酸ジエス
テル)、注4:日本油脂製有機過酸化物(ジクミルパー
オキサイド)、注5:日本油脂製有機過酸化物(1,1
−ビス(t−ブチルパーオキシ)−3,3,5−トリメ
チルシクロヘキサン)、注6:日本油脂製有機過酸化物
(1,1−ビス(t−ヘキシルパーオキシ)−3,3,
5−トリメチルシクロヘキサン)、注7:加熱混練にお
いて、硬化が過剰に進行し、材料化評価できなかった。
[Table 2] In Table 2, Note 1: Daiso's polymerizable monomer (isophthalic acid diallyl ester), Note 2: PPG Japan Co., Ltd. polymerizable monomer (bisethylene glycol diallyl carbonate), Note 3: Kyoeisha Chemical's polymerization Monomer (methacrylic acid diester of bisphenol A epoxy), Note 4: NOF's organic peroxide (dicumyl peroxide), Note 5: NOF's organic peroxide (1,1)
-Bis (t-butylperoxy) -3,3,5-trimethylcyclohexane), Note 6: Organic peroxide (1,1-bis (t-hexylperoxy) -3,3, manufactured by NOF CORPORATION
5-trimethylcyclohexane), Note 7: In heating and kneading, curing proceeded excessively, and materialization could not be evaluated.

【0032】表の結果から明らかなように、本発明の光
半導体封止用不飽和ポリエステル樹脂組成物は透明性、
耐紫外線劣化性、耐熱性に優れ、又、これを用いたパッ
ケージは耐半田性、および耐通電劣化性に優れているこ
とが分かる。
As is clear from the results in the table, the unsaturated polyester resin composition for encapsulating an optical semiconductor of the present invention has transparency,
It can be seen that the ultraviolet resistance and the heat resistance are excellent, and the package using the same is excellent in the solder resistance and the resistance to electrical deterioration.

【0033】[0033]

【発明の効果】本発明の光半導体封止用不飽和ポリエス
テル樹脂組成物は透明性、耐紫外線劣化性、耐熱性に優
れており、耐半田性、及び耐通電劣化性に優れる光半導
体装置を提供することができる。
Industrial Applicability The unsaturated polyester resin composition for optical semiconductor encapsulation of the present invention is excellent in transparency, ultraviolet ray deterioration resistance and heat resistance, and is excellent in solder resistance and resistance to energization deterioration. Can be provided.

Claims (6)

【特許請求の範囲】[Claims] 【請求項1】 マレイン酸、フマル酸及びそれらの無水
物から選ばれる少なくとも1つ以上の不飽和酸成分
(a)と、脂肪族もしくは脂環式の二価アルコールから
選ばれる少なくとも1つ以上のジオール成分(b)とを
重合してなる不飽和ポリエステル樹脂(A)100重量
部、及び有機過酸化物(B)0.1〜10重量部を含む
不飽和ポリエステル樹脂組成物であって、不飽和ポリエ
ステル樹脂(A)が、重量1kgあたり1モル以上の
(a)成分由来のα,β−エチレン性不飽和基を含み、
波長380〜400nmの領域において、光路長1mm
で90%以上の光透過率を有し、55℃以上120℃未
満の軟化点を有する光半導体封止用不飽和ポリエステル
樹脂組成物。
1. At least one unsaturated acid component (a) selected from maleic acid, fumaric acid and their anhydrides, and at least one selected from aliphatic or alicyclic dihydric alcohols. An unsaturated polyester resin composition comprising 100 parts by weight of an unsaturated polyester resin (A) obtained by polymerizing a diol component (b) and 0.1 to 10 parts by weight of an organic peroxide (B), The saturated polyester resin (A) contains 1 mol or more of the α, β-ethylenically unsaturated group derived from the component (a) per 1 kg of weight,
Optical path length of 1 mm in the wavelength range of 380 to 400 nm
At 90% or more, and an unsaturated polyester resin composition for optical semiconductor encapsulation having a softening point of 55 ° C or higher and lower than 120 ° C.
【請求項2】 不飽和ポリエステル樹脂(A)が、脂肪
族もしくは脂環式の飽和二塩基酸及びそれらの無水物か
ら選ばれる酸成分(c)を含んで重合される請求項1記
載の光半導体封止用不飽和ポリエステル樹脂組成物。
2. The light according to claim 1, wherein the unsaturated polyester resin (A) is polymerized to contain an acid component (c) selected from an aliphatic or alicyclic saturated dibasic acid and an anhydride thereof. Unsaturated polyester resin composition for semiconductor encapsulation.
【請求項3】 有機過酸化物が、パーオキシケタール類
である請求項1又は2記載の光半導体封止用不飽和ポリ
エステル樹脂組成物。
3. The unsaturated polyester resin composition for optical semiconductor encapsulation according to claim 1, wherein the organic peroxide is a peroxyketal.
【請求項4】 成形温度における溶融最低粘度が、1ポ
アズ以上、300ポアズ未満である、請求項1、2又は
3記載の光半導体封止用不飽和ポリエステル樹脂組成
物。
4. The unsaturated polyester resin composition for optical semiconductor encapsulation according to claim 1, 2 or 3, which has a minimum melt viscosity at a molding temperature of 1 poise or more and less than 300 poise.
【請求項5】 樹脂組成物の硬化物が、365nmの波
長で40mW/cm 2の照度の高圧水銀灯を2時間照射
後に、波長380〜400nmの領域において、光路長
1mmで80%以上の光透過率を有する請求項1〜4の
いずれかに記載の光半導体封止用不飽和ポリエステル樹
脂組成物。
5. The cured product of the resin composition has a wave of 365 nm.
40mW / cm long 2High-pressure mercury lamp with illuminance of 2 hours
Later, in the wavelength range of 380 to 400 nm, the optical path length
The light transmittance of 80% or more at 1 mm is obtained.
The unsaturated polyester resin for encapsulating an optical semiconductor according to any one of
Fat composition.
【請求項6】 請求項1〜5のいずれかに記載の光半導
体封止用不飽和ポリエステル樹脂組成物の硬化物にて封
止された、青色発光素子、白色発光素子、又は青色レー
ザー用受光素子を具備してなる光半導体装置。
6. A blue light emitting device, a white light emitting device, or a light receiving device for a blue laser, which is encapsulated with a cured product of the unsaturated polyester resin composition for encapsulating an optical semiconductor according to claim 1. An optical semiconductor device comprising an element.
JP2001399115A 2001-12-28 2001-12-28 Optical semiconductor sealing unsaturated polyester resin composition, and optical semiconductor device sealed therewith Pending JP2003197830A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001399115A JP2003197830A (en) 2001-12-28 2001-12-28 Optical semiconductor sealing unsaturated polyester resin composition, and optical semiconductor device sealed therewith

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001399115A JP2003197830A (en) 2001-12-28 2001-12-28 Optical semiconductor sealing unsaturated polyester resin composition, and optical semiconductor device sealed therewith

Publications (1)

Publication Number Publication Date
JP2003197830A true JP2003197830A (en) 2003-07-11

Family

ID=27604276

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001399115A Pending JP2003197830A (en) 2001-12-28 2001-12-28 Optical semiconductor sealing unsaturated polyester resin composition, and optical semiconductor device sealed therewith

Country Status (1)

Country Link
JP (1) JP2003197830A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011146523A (en) * 2010-01-14 2011-07-28 Panasonic Electric Works Co Ltd Light emitting device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011146523A (en) * 2010-01-14 2011-07-28 Panasonic Electric Works Co Ltd Light emitting device

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