JP2003197508A - Developing device and developing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a compact developing device and a developing method by which a developing time of thick-film resist can be reduced and a large object to be treated be developed. <P>SOLUTION: This developing device is designed to adjust the temperature of a developer supplied from a developer supply tank through a heat exchanger and to supply it to a developing tank. An object to be treated is vertically held in the developing tank for single sheet processing, and a temperature- adjusted developer is circulated in the developing device. <P>COPYRIGHT: (C)2003,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a developing treatment apparatus and a developing treatment method, and more particularly to developing treatment by supplying a developing solution kept at a constant temperature to the surface of a substrate to be treated coated with a thick film photoresist having a thickness of 10 μm or more. The present invention relates to a developing processing device and a developing method.

[0002]

2. Description of the Related Art Conventionally, a photoresist is applied to a substrate to be processed such as a semiconductor wafer, a circuit pattern is transferred to the photoresist by using a photolithography technique, and then a developing solution is supplied to the patterned surface to apply the applied resist. It is known to develop a latent image pattern on a film to form a circuit on the surface of a substrate to be processed.

However, in recent years, the line width of circuit patterns has become narrower as the degree of integration of electric circuits formed on a semiconductor substrate is increased. In line with this, the line width of the pattern formed by exposing and developing a resist film on a semiconductor substrate is also becoming narrower.

When developing the resist film with a developing solution, the temperature of the developing solution affects the line width of the pattern. In particular, temperature control during development is important for highly accurate pattern formation. For example, in Japanese Patent Laid-Open No. 6-163393, in an immersion type developing device, a semiconductor substrate on which a resist film is formed before development can be conveyed to the developing device while being kept at a set temperature of a developing solution. It is disclosed that the temperature of the developing tank in the apparatus and the atmosphere in which the developing tank is taken in are also adjusted.

Further, in the paddle type developing device, the method disclosed in Japanese Patent Laid-Open No.
In Japanese Patent Laid-Open No. 001-102292, a developing solution is placed on a substrate to be processed, and then the developing solution is heated. If the reaction proceeds immediately after supplying the developing solution, uneven development may occur due to a time lag. Therefore, the developing solution is kept at a low temperature (5
C.) and irradiated with far infrared rays as a heating means, and the developing solution reaches a processing temperature of 23.degree. After that, it is disclosed that the developing solution is raised to 60 ° C. to end the developing process.

[0006]

However, the above-mentioned developing device has a problem that the developing time becomes long and the developing processing speed decreases with respect to the thick film resist coated on the object to be processed by 10 μm or more. Further, there is a problem that the size of the entire apparatus must be increased as the size of the object to be processed increases. Further, when the developer is supplied by the shower method, the temperature can be maintained at a predetermined temperature until the moment when the developer is discharged, but after the discharge, the temperature and concentration of the liquid change due to evaporation, and the predetermined development is performed. It is difficult to maintain the liquid performance, and uneven development may occur.

The present invention has been made in view of the above problems, and provides a compact developing device and developing method capable of shortening the development time of a thick film resist and developing a large object to be processed. With the goal.

[0008]

In order to solve the above-mentioned problems, the developing device of the present invention is a developing device for supplying the developing solution supplied from a developing solution supply tank to a developing tank while controlling the temperature through a heat exchanger. Hold the object to be processed vertically in the developing tank to perform the single-wafer processing, and perform the developing processing while circulating the temperature-controlled developing solution in the developing device, and adjust the temperature of the developing solution. Adjust the temperature above 40 ° C and below 60 ° C.

By holding the object to be processed vertically in the developing tank, it is possible to develop a large object to be processed without increasing the size of the developing device. Further, by circulating the developing solution whose temperature is controlled to 40 ° C. or more and less than 60 ° C. in the developing device,
The developing time can be shortened to 1/2 to 1/3 of the conventional one. Furthermore, since the developing solution is not kept flowing as in the shower method, the amount of the developing solution used can be saved.

Further, the paddle type developing apparatus according to the present invention is a paddle for supplying a developing solution onto the object to be processed from a nozzle and rotating the chuck body after a lapse of a predetermined time to shake off the developing solution on the object to be processed. A mold developing apparatus, which is provided with a temperature controller, is provided with a circulation path of temperature-controlled water that is led out from the temperature controller and returns to the temperature controller again.
The nozzle and the pipe connected to the nozzle are temperature-controlled in a part of the circulation path, and the chuck body is temperature-controlled in another part of the circulation path.

By controlling the temperature of the developing solution up to the tip of the nozzle and supplying it to the object to be processed, it is possible to effectively prevent the occurrence of defective development rather than heating after supplying the developing solution. In addition, by controlling the temperature of the developer and the chuck body in the circulation path of the temperature-controlled water, the entire developing device can be made compact, and the temperature of the back surface of the wafer is adjusted to a predetermined temperature by the chuck. In addition, it is possible to prevent the liquid temperature from dropping after the developer is discharged, and to make the in-plane distribution of the developer after coating uniform.

Further, the developing device is provided with a blower for feeding the temperature-controlled air, and a heating device for heating the object to be processed to a predetermined temperature in advance before being carried into the developing device. It is possible.

With such a structure, the temperature in the developing device space is adjusted, and the object whose temperature has been adjusted is carried into the developing device to stabilize the atmosphere in the developing device. It is possible to prevent uneven development more effectively.

Further, the temperature control temperature of the chuck body, the temperature control temperature of the developing solution, the temperature control temperature of the heating device for heating the object to be processed, and the temperature control temperature of the blower are all 40 ° C.
It is preferable that the temperature is not lower than 60 ° C. When it is necessary to strictly control the temperature of the chuck body, it is preferable to separately prepare a temperature control device.

By shortening the developing time of the thick film resist by setting the temperature of the developing solution, the chuck body, the object to be treated and the sent air to 40 ° C. or more and less than 60 ° C.

Further, in the developing method using the above-mentioned immersion type developing apparatus and paddle type developing apparatus according to the present invention, the developing solution is supplied to the object to be processed while controlling the temperature to a predetermined temperature, and a thick film resist having a thickness of 10 μm or more. Is developed.

By directly supplying the developing solution whose temperature is controlled to a predetermined temperature (40 ° C. or more and less than 60 ° C.) to the object to be treated,
Development of a thick film resist of 0 μm or more can be processed in a short time.

[0018]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below. FIG. 1 is a configuration diagram of an immersion developing device according to the present invention. This developing device has a developer fixed amount holding unit 1 that temporarily stores and supplies the developer, and the developer fixed amount holding unit 1 is provided.
A temperature sensor 2 for detecting the temperature of the developing solution, a water level detecting sensor 3 for detecting the water level of the developing solution, and a developing solution introducing pipe 4 for introducing the developing solution are inserted therein.

Further, this developing device has a developing tank 5.
The developing tank 5 is formed so as to be connected to the developer fixed amount holding unit 1, and in the embodiment shown in FIG.
Is provided. The viewing window 6 may be made of a transparent material such as glass or plastic. In the other part of the developing tank 5, a lead-out pipe 8 for circulating the developer 7 is provided, and an overflow pipe 9 for discharging the developer 7 is provided. Further, the developer 7 is placed on the bottom of the developing tank 5.
A drain hole is provided to drain the drain inside.

In the developing tank 5, a water level detecting sensor 10 for detecting the water level of the developing solution 7 and a conductivity meter 11 for observing the state of the developing solution 7 are provided as in the case of the developing solution fixed amount holding section 1.
And are provided.

Further, a lid 12 is attached to the opening of the developing tank 5. This lid 12 is for preventing evaporation of the developing solution 7 and for preventing carbon dioxide in the air from being mixed.
Several holes are provided for hermetically inserting the water level detection sensors 3 and 10, the temperature sensor 2, the conductivity meter 11, and the developer introducing pipe 4 described above.

Further, the upper end of the partition plate 13 in the vertical direction is attached to a part of the inner surface of the lid 12. A holder 15 for holding a wafer or a glass substrate 14, which is an object to be processed, is fixed to the partition plate 13. The wafer 14 is moved in and out of the developing tank 5 by means of an access door 16 provided on the lid 12. The partition plate 13 is
It may be attached to the bottom of the developing tank 5.

FIG. 2 is an overall piping diagram of the immersion developing apparatus shown in FIG. As shown in FIG. 2, the circulation path for controlling and circulating the temperature of the developing solution is mainly composed of a pump, a filter, and a heat exchanger, and further, a waste solution tank for discharging the developing solution and a pipe connecting these are provided. It is installed.

FIG. 3 is an enlarged front view of the holder 15 for holding the wafer 14 shown in FIG. 4 and 5 show
Enlarged side view of holder 15 and holder 15, respectively
11 is a sectional view taken along line II ′ of FIG. In this embodiment, three holders 15 are attached to the partition plate 13. The two holders 15-a are installed at the same height position with respect to the developing tank 5, and the holder 15-b is installed below the holder 15-a so that the wafer 14 can be placed thereon. The three holders 15 are fixed to the partition plate 13 by fasteners 26, both of which are indicated by dotted lines, and the fixing positions can be adjusted depending on the size of the wafer 14.
The partition plate 13 is not always necessary, and the side wall of the developing tank 5 can be used instead. Further, the shape of the holder 15 may be changed and the holder 15 may be directly attached to the bottom of the developing tank 5.

In the immersion developing apparatus according to the embodiment of the present invention, first, a new developer 7 is supplied from the developer fixed amount holding section 1 to the developing tank 5. At this time, the drain hole of the developing tank 5 is closed, and the developer 7 is circulated by the pump through the developing tank 5, the heat exchanger and the piping. While the developer 7 is being circulated, a predetermined temperature (40 ° C or more and 60 ° C or more is passed through a heat exchanger.
Less than).

Next, at the introduction portion attached to the upstream side of the developing tank 5, the water level sensor 3 detects that the developer 7 has accumulated to the required water level, and the temperature sensor 2 keeps the developer 7 at a predetermined temperature. When the rise is detected, the loading / unloading door 16 of the developing tank 5 is opened, and the wafer 14 is loaded into the developing tank 5.

Then, the loaded wafer 14 is vertically locked by the holder 15 with respect to the developing tank 5, the loading / unloading door 16 is closed again, and the developing process is started. Since the liquid temperature is high in the open state, the concentration of the developer 7 may change due to evaporation, so the lid 12 is necessary.

Further, the developing process is monitored by time, and the wafer 14 is immersed in the developing tank 5 for a predetermined time, and the developing solution 7 is continuously circulated during the immersion, so that the wafer 14 is continuously circulated.
It promotes the dissolution of the resist applied to and prevents the development residue. After a lapse of a predetermined time, the loading / unloading door 16 opens and the wafer 14 is taken out. It should be noted that no new developing solution is supplied during the processing, and the above-mentioned developing processing is performed in a closed state.

While processing several wafers 14, the capacity of the developing solution 7 decreases. Then, the conductivity meter 11 detects that the developer 7 cannot maintain the alkali concentration necessary for development, and stops the loading of the wafer 14 and replaces the developer 7.

When all of the developing solution 7 is replaced, the heat exchanger is stopped, the drain hole is opened, and the developing solution in the developing tank and the pipe is completely discharged to the waste solution tank. After that, the drain hole is closed, the developer 7 is supplied from the developer fixed amount holding unit 1, and the process returns to and the developing process is repeated.

When part of the developing solution 7 is replaced,
The drain hole is opened for a certain period of time, a certain amount of the developing solution (drain) is discharged, and new developing solution is supplied until the value of the conductivity meter 11 recovers to a value capable of the developing process, and then the process returns to the developing process. repeat. In addition, as a means for partially replacing the developing solution, a constant (small amount) developing solution is supplied outside the developing processing time such as when the wafer 14 is carried in and out to maintain the developing solution in a processable state at all times. can do. By using these means, the processing can be continued without stopping the development processing as in the method described above. Furthermore, in order to restore the concentration of the developing solution when the developing performance deteriorates during the development process, the stock solution of the developing solution (generally, xylene which is an organic solvent for a negative resist is used). Butyl acetate is an organic alkaline aqueous solution for positive resist, TMAH
(Tetramethyl anmmonium hydroxide) etc. are considered. ), The amount of the developer used can be reduced.

Further, by loading and unloading the wafer in the vertical direction, the immersion time in the developing solution is slightly different between the immersion start point and the immersion end point of the wafer. However, since it is a thick film resist, a slight difference in development time does not cause adverse effects such as uneven development processing.

In the immersion type developing apparatus shown in the above embodiment,
By installing the wafer in the developing tank in the vertical direction, a large wafer can be processed without increasing the size of the developing device. Further, the temperature of the developing solution is adjusted and then supplied to the wafer, whereby the developing time can be greatly reduced. Table 1 shows the evaluation of the development state according to the temperature of the developing solution and the development time. In this example, PM, which is a positive photoresist manufactured by Tokyo Ohka Kogyo Co., Ltd., is formed on the wafer.
ER LA-900 was provided so as to have a film thickness of 20 μm, and a substrate irradiated with ultraviolet rays through a test mask pattern was used as a developing solution by Tokyo Ohka Kogyo Co., Ltd. PMER-
It was carried out using 7G.

[0034]

[Table 1]

Next, another embodiment of the present invention will be described. FIG. 6 is a block diagram of a paddle type developing device according to the present invention. This developing device is provided with a temperature controller 17,
A circulation path of temperature-controlled water from which the temperature-controlled water (hereinafter referred to as temperature-controlled water) is discharged from the temperature controller 17 through the pipe 18 in the direction indicated by the arrow and returns to the temperature controller 17 again. Are formed.

The piping 18 of the circulation path of this temperature control water is shown in FIG.
As shown in FIG. 5, it has a double structure with the pipe 19 for conveying the developing solution. Therefore, the temperature control water controls the temperature of the developer from the A origin to the B origin of the pipe 18 by heat exchange. Further, the nozzle 2 is provided on the head of the pipe 19 for discharging the developing solution.
No. 0 is attached, and this nozzle 20 is also temperature-controlled together with the pipe 19 by the temperature-controlled water.

Further, the temperature of the chuck 21 is controlled in another part of the circulation path of the temperature controlled water. As shown in FIG. 6, the chuck 21 has a structure for introducing temperature-controlled water into the inside thereof.

The wafer 22 fixed on the upper surface of the chuck 21 has a predetermined temperature (4
After the temperature is adjusted to 0 ° C or higher and lower than 60 ° C), the chuck 21
Be transported to.

The chuck 21 and the like described above are installed in the chamber 23. A lid 24 is attached to the upper portion of the chamber 23. An air outlet 25 having a filter shape is provided in a part of the lid 24, and the air whose temperature is adjusted to a predetermined temperature is sent into the chamber 23.

In the paddle type developing device shown in the above embodiment, the developing device itself can be made compact by controlling the temperature of the developing solution and the chuck at the same time by the circulation path of the temperature control water, and at the same time, the freshness is constantly maintained. It is possible to supply a different developing solution, and it is possible to prevent particles and the like from adhering to the wafer.

In addition, as shown in Tables 2 and 3, 4
By supplying the developing solution whose temperature is adjusted to 0 or more and less than 60 ° C., the dissolution of the resist coated on the wafer can be accelerated and the developing time can be significantly shortened. When the developing temperature is lower than 40 ° C., the developing time is not shortened so much. On the contrary, when the developing temperature is higher than 60 ° C., the surface of the resist film which should otherwise be left is adversely affected.

Table 2 shows the evaluation of the development state by the temperature of the developing solution and the developing time when developing a 20 μm thick film, and Table 3 shows the temperature of the developing solution when developing a 40 μm thick film. And the evaluation of the development state by the development time are shown. Here, in Table 2, PMERLA-900 manufactured by Tokyo Ohka Kogyo Co., Ltd. was used as a photoresist, and PMER-7G was used as a developing solution. In Table 3, the same PM
ER CA-3000 is used as a developing solution for the same PMER-7.
G was used.

[0043]

[Table 2]

[0044]

[Table 3]

[0045]

As described above, according to the present invention, by holding the object to be processed in the developing tank in the vertical direction, it is possible to develop a large object to be processed without enlarging the developing device. it can. Further, by circulating the developing solution whose temperature is adjusted to 40 ° C. or more and less than 60 ° C. in the developing device, the developing time can be shortened to 1/2 to 1/3 of the conventional time. Furthermore,
Since the developing solution is not kept flowing as in the shower method, the usage amount of the developing solution can be saved.

Further, if the temperature of the developer is adjusted to the tip of the nozzle and the developer is supplied to the object to be processed, it is possible to effectively prevent the development failure from being overheated after supplying the developer. Further, by controlling the temperature of the developing solution and the chuck main body in the circulation path of the temperature controlling water, it is possible to realize the downsizing of the entire developing device and also the temperature of the wafer is controlled to a predetermined temperature from the back surface by the chuck. Therefore, it is possible to prevent the liquid temperature from dropping after the developing liquid is discharged, and to perform the developing process at a uniform temperature.

Further, the temperature in the developing device space is adjusted by the temperature-controlled air, and the preliminarily temperature-controlled object is carried into the developing device, so that the atmosphere in the developing device is kept stable. Development unevenness can be prevented more effectively.

By setting the temperature of the developing solution, the chuck body, the object to be processed and the sent air to 40 ° C. or higher and less than 60 ° C., it is possible to shorten the development time of the thick film resist.

Furthermore, by directly supplying the developer whose temperature is controlled to a predetermined temperature (40 ° C. or more and less than 60 ° C.) to the object to be processed, the development of a thick film resist of 10 μm or more can be processed in a short time. can do.

[Brief description of drawings]

FIG. 1 is a configuration diagram of an immersion developing device according to the present invention.

FIG. 2 is an overall view of the piping of the immersion developing device shown in FIG.

FIG. 3 is a front view of the substrate holder shown in FIG.

4 is an enlarged side view of the substrate holder shown in FIG.

5 is a sectional view of the substrate holder shown in FIG. 4 taken along the line II ′.

FIG. 6 is a configuration diagram of a paddle type developing device according to the present invention.

FIG. 7 is an enlarged partial cross-sectional view showing piping from A to B in FIG.

[Explanation of Codes] 1 ... Developer constant amount holding unit, 2 ... Temperature sensor, 3, 1
0 ... Water level detection sensor, 4 ... Developer inlet pipe, 5 ... Developing tank, 6 ... Viewing window, 7 ... Developer, 8 ... Outlet pipe,
9, 18, 19 ... Piping, 11 ... Conductivity meter, 12, 2
4 ... Lid, 13 ... Partition plate, 14, 22 ... Wafer,
15 ... Holder, 16 ... Access door, 17 ... Temperature controller, 20 ... Nozzle, 21 ... Chuck, 23 ...
Chamber, 25 ... Blower.

Claims (7)

[Claims] 1. A photoresist developing device for supplying a developing solution supplied from a developing solution supply tank to a developing tank while controlling the temperature of the developing solution through a heat exchanger, wherein an object to be processed is held vertically in the developing tank. The immersion developing apparatus is characterized in that the single-wafer processing is performed, and the developing processing is performed while circulating the temperature-controlled developing solution in the developing apparatus. 2. The temperature control temperature of the developer is 40.degree.
The immersion developing device according to claim 1, wherein the temperature is adjusted to be less than 0 ° C. 3. A paddle-type photoresist developing device for supplying a developing solution onto a material to be processed from a nozzle and rotating a chuck body after a lapse of a predetermined time to shake off the developing solution on the material to be processed. The device is provided with a temperature controller, and a circulation path of temperature-controlled water that is led to the outside from the temperature controller and returns to the temperature controller is provided, and the nozzle and the nozzle are provided at a part of this circulation path. A paddle type developing device characterized by controlling the temperature of a continuous pipe. 4. The paddle type developing device according to claim 3, wherein the temperature of the chuck body is controlled in another part of the circulation path. 5. A blower for feeding temperature-controlled air into the developing device, and a heating device for heating the object to be processed to a predetermined temperature before being carried into the developing device. The paddle type developing device according to claim 3. 6. The temperature control temperature of the chuck body, the temperature control temperature of the developer, the temperature control temperature of a heating device for heating the object to be processed, and the temperature control temperature of the blower are all 40 ° C. or higher.
6. The paddle type developing device according to claim 3, wherein the temperature is lower than 0 ° C. 6. 7. A developing method using the developing device according to claim 1, wherein the developing solution is supplied to an object to be processed while being temperature-controlled to a predetermined temperature. A developing method comprising developing a thick film photoresist.