JP2003194478A - Heat treatment device - Google Patents

Heat treatment device

Info

Publication number
JP2003194478A
JP2003194478A JP2001394424A JP2001394424A JP2003194478A JP 2003194478 A JP2003194478 A JP 2003194478A JP 2001394424 A JP2001394424 A JP 2001394424A JP 2001394424 A JP2001394424 A JP 2001394424A JP 2003194478 A JP2003194478 A JP 2003194478A
Authority
JP
Japan
Prior art keywords
heating
thin film
pattern
film heater
heat treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001394424A
Other languages
Japanese (ja)
Inventor
Hiroshi Kitamura
寛 北村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JTEKT Thermo Systems Corp
Original Assignee
Koyo Thermo Systems Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koyo Thermo Systems Co Ltd filed Critical Koyo Thermo Systems Co Ltd
Priority to JP2001394424A priority Critical patent/JP2003194478A/en
Publication of JP2003194478A publication Critical patent/JP2003194478A/en
Pending legal-status Critical Current

Links

Abstract

<P>PROBLEM TO BE SOLVED: To provide a compact, low-cost heat treatment device capable of preventing a lowering of treating quality even in the case of heating a treated object of large dimensions or heating the treated object at a high temperature. <P>SOLUTION: A heating source 2 for heating the treated object W of plate shape is arranged in a heating chamber 1, and the heating source 2 is provided with a thin film heater 3 with a pattern 3a for heating the treated object W, prepared to uniformize the internal temperature distribution of the treated object W, and first and second glass (insulating members) 4, 5 for holding the thin film heater 3 in the state of covering the pattern 3a. <P>COPYRIGHT: (C)2003,JPO

Description

【発明の詳細な説明】 【0001】 【発明の属する技術分野】本発明は、フラットディスプ
レイパネルに用いられるガラス基板等の板状の被処理物
を加熱するための熱処理装置に関する。 【0002】 【従来の技術及び発明が解決しようとする課題】例えば
液晶パネルやプラズマディスプレイパネルに使用される
ガラス基板には、その用途に応じてアニール処理や被膜
処理などの加熱処理が適宜施されている。このような加
熱処理では、従来、シロッコファン等で加熱室内に循環
させた熱風によって基板を加熱する熱風循環方式の熱処
理装置やローラハース式等の搬送部材によりガラス基板
を搬送しつつヒータによって加熱する連続焼成炉が使用
されてきた。ところが、上記のような従来の熱処理装置
では、前者の場合においては、ガラス基板の寸法が大き
くなるに従って、またはその加熱温度が高くなるに従っ
て、基板の均一な加熱が難しくなり、焼ムラや熱歪みが
発生する場合があった。また、後者の場合においては、
上記のような搬送部材などが設けられていることから装
置構成が大型化し、設備コストやランニングコストが高
くなり、製造コストを下げるのが困難であった。 【0003】上記のような従来の問題点に鑑み、本発明
は、大きい寸法の被処理物や高温度で被処理物を加熱す
る場合でも、その処理品質が低下するのを防ぐことがで
き、かつコンパクトで安価な熱処理装置を提供すること
を目的とする。 【0004】 【課題を解決するための手段】本発明は、加熱室と、前
記加熱室内で板状の被処理物を加熱する加熱源とを備
え、前記加熱源が、前記被処理物の内部温度分布が均一
化されるよう当該被処理物を加熱するパターンが作成さ
れた薄膜ヒータと、前記薄膜ヒータのパターンを覆った
状態で当該ヒータを挟持する絶縁部材とを具備すること
を特徴とするものである(請求項1)。 【0005】上記のように構成された熱処理装置では、
上記パターンを有する薄膜ヒータによって被処理物を加
熱しているので、大きい寸法の被処理物や高温度で被処
理物を加熱する場合でも、被処理物の内部温度分布を均
一なものとして当該被処理物を加熱することができる。
また、加熱室内で上記薄膜ヒータによって被処理物を加
熱していることから、上記従来例と異なって搬送部材等
を不要として装置構成をコンパクト化することができ
る。さらに、上記パターンを絶縁部材により覆っている
ので、酸化スケールや金属スケール等の塵がパターンか
ら加熱室内に拡がるのを防ぐことができる。 【0006】 【発明の実施の形態】以下、本発明の熱処理装置の好ま
しい実施形態について、図面を参照しながら説明する。
図1は、本発明の一実施形態による熱処理装置の要部構
成を示す断面図である。図において、本実施形態の熱処
理装置は、密閉可能な加熱室1と、この加熱室1内に配
置され、ガラス基板や半導体ウェハ等の板状の被処理物
Wを加熱する加熱源2とを備えている。上記加熱室1
は、装置外皮を構成する金属板(図示せず)の内側に設
けられた断熱材1aにより断面矩形状に囲まれたもので
あり、被処理物Wを出し入れする開閉可能な扉1bが設
けられている。また、この加熱室1は、ガス導入口及び
排出口を気密に接続可能なものであり、当該室1内を所
望雰囲気として被処理物Wを熱処理できるようになって
いる。上記加熱源2は、図示しない電源に接続された薄
膜ヒータ3と絶縁部材としての第1及び第2ガラス4,
5とを備えたものであり、第1ガラス4上に置かれた被
処理物Wを薄膜ヒータ3の輻射熱で加熱する。 【0007】上記薄膜ヒータ3は、例えば厚さ50μm
程度のステンレス箔等の導電性材料により構成されたも
のであり、フォトエッチング加工により作成されたパタ
ーン3aを有している(図2も参照)。このパターン3
aは、被処理物Wの寸法及びそれに対する加熱温度等に
応じてパターニングされたものであり、被処理物Wの内
部温度分布が均一化されるよう当該被処理物Wを加熱す
る。また、このパターン3aの四隅には、第1及び第2
ガラス4,5の間で薄膜ヒータ3を固定するための固定
ピン6を挿通する孔3bが設けられている。また、この
パターン3aの両端に連続するヒータ3の一端部3c及
び他端部3dは、図示を省略した異形ガラススリーブ等
の絶縁部材内を挿通した状態で加熱室1内に配置され、
かつ断熱材1a中を通して加熱室1外部に引き出され、
上記電源に接続されている。 【0008】上記第1及び第2ガラス4,5は、非晶質
の石英ガラスやネオセラム(日本電気硝子社製)等のガ
ラスセラミック(結晶化ガラス)により構成されたもの
であり、上記パターン3aを覆った状態で薄膜ヒータ3
を挟持している。尚、第1ガラス4に設けられた穴部
(表面に非貫通)には、加熱時における上記パターン3
aの変形を抑えるための窒化アルミ(AlN)等からな
る複数のピン部材7が取付けられている。 【0009】以上のように構成された本実施形態の熱処
理装置では、上記パターン3aを有する薄膜ヒータ3に
よって被処理物Wを加熱することにより、大きい寸法の
被処理物Wや高温度で被処理物Wを加熱する場合でも、
被処理物Wの内部温度分布を均一なものとして当該被処
理物Wを加熱することができる。従って、大きい寸法の
被処理物Wや高温度で被処理物Wを加熱する場合でも、
焼ムラ及び熱歪みが発生するのを防いで均一に被処理部
Wを加熱することができ、処理品質が低下するのを防ぐ
ことができる。また、加熱室1内の上記薄膜ヒータ3を
含む加熱源2を用いた簡単な構成で均一に被処理物Wを
加熱することができることから、上記搬送部材やシロッ
コファン等を付属した上記従来例と異なり、装置構成の
コンパクト化を容易に行えるとともに、設置スペースが
小さく、さらには付属部材の設備電力が少ない、コスト
安価な装置も容易に構成することができる。さらに、上
記パターン3aを第1及び第2ガラス4,5により覆っ
ているので、酸化スケールや金属スケール等の塵がパタ
ーン3aから加熱室1内に拡がるのを防ぐことができ、
上記塵等で被処理物Wが汚染されるのを防止することが
できる。 【0010】尚、発明者の試験結果によれば、被処理物
Wとしてのガラス基板を薄膜ヒータ3により600℃で
加熱したときでも、その内部温度分布は600℃近辺で
ほぼ均一な値となり、焼ムラや熱歪みをガラス基板に生
じることなく均一に加熱できることが確認された。 【0011】尚、上記の説明では、第1ガラス4上に載
せた被処理物Wを加熱する構成について説明したが、本
発明はこれに限定されるものではなく、例えば図3に示
すように、第1ガラス4上に配置した支持部材8によ
り、被処理物Wを浮上させた状態で加熱する構成でもよ
い。また、同図に一点鎖線にて示すように、被処理物W
の上方にもう一つの加熱源2を設けて加熱する構成でも
よい。また、上記の説明では、第1及び第2ガラス4,
5を用いた構成について説明したが、本発明はこれに限
定されるものではなく、上記パターン3aを覆った状態
で薄膜ヒータ3を挟持することができる電気的な絶縁性
を有する絶縁部材であればよい。 【0012】 【発明の効果】以上のように構成された本発明は以下の
効果を奏する。請求項1の熱処理装置によれば、大きい
寸法の被処理物や高温度で被処理物を加熱する場合で
も、内部温度分布を均一なものとして被処理物を加熱す
ることができるので、当該被処理物に焼ムラ及び熱歪み
が発生するのを防ぐことができる。その結果、被処理物
を均一に加熱することができ、処理品質が低下するのを
防ぐことができる。また、加熱室内の上記薄膜ヒータを
含む加熱源を用いた簡単な構成で均一に被処理物を加熱
することができるので、設備コストやランニングコスト
を抑えたコンパクトな装置を容易に構成することができ
る。さらに、酸化スケールや金属スケール等の塵が加熱
室内に拡がるのを防ぐことができるので、上記塵等で被
処理物が汚染されるのを防止することができ、処理品質
の低下を防ぐことができる。
Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a heat treatment apparatus for heating a plate-like workpiece such as a glass substrate used for a flat display panel. 2. Description of the Related Art For example, a glass substrate used for a liquid crystal panel or a plasma display panel is appropriately subjected to a heat treatment such as an annealing treatment or a coating treatment according to its use. ing. In such a heating process, conventionally, a glass substrate is conveyed by a heating member of a hot air circulation system in which a substrate is heated by hot air circulated in a heating chamber by a sirocco fan or the like, or a heating member is conveyed by a heater such as a roller hearth type. Firing furnaces have been used. However, in the conventional heat treatment apparatus as described above, in the former case, as the size of the glass substrate increases, or as the heating temperature increases, uniform heating of the substrate becomes more difficult, resulting in uneven firing and thermal distortion. May occur. In the latter case,
The provision of the above-described transport members and the like increases the size of the apparatus, increases equipment costs and running costs, and makes it difficult to reduce manufacturing costs. In view of the above-mentioned conventional problems, the present invention can prevent the processing quality from deteriorating even when an object to be processed having a large size or an object to be heated is heated at a high temperature. Another object of the present invention is to provide a compact and inexpensive heat treatment apparatus. According to the present invention, there is provided a heating chamber, and a heating source for heating a plate-like workpiece in the heating chamber, wherein the heating source is provided inside the workpiece. The thin film heater includes a thin film heater in which a pattern for heating the processing object is formed so that the temperature distribution is uniform, and an insulating member that sandwiches the heater while covering the pattern of the thin film heater. (Claim 1). In the heat treatment apparatus configured as described above,
Since the object to be processed is heated by the thin film heater having the above-described pattern, even when the object to be processed having a large size or the object to be processed is heated at a high temperature, the internal temperature distribution of the object to be processed is made uniform and the object is heated. The processed material can be heated.
Further, since the object to be processed is heated in the heating chamber by the thin film heater, unlike the above-described conventional example, a transport member or the like is not required, and the apparatus configuration can be made compact. Furthermore, since the pattern is covered with the insulating member, it is possible to prevent dust such as an oxide scale and a metal scale from spreading from the pattern into the heating chamber. Preferred embodiments of the heat treatment apparatus of the present invention will be described below with reference to the drawings.
FIG. 1 is a cross-sectional view illustrating a main configuration of a heat treatment apparatus according to an embodiment of the present invention. In the figure, the heat treatment apparatus of the present embodiment includes a heating chamber 1 that can be hermetically sealed, and a heating source 2 that is disposed in the heating chamber 1 and that heats a plate-like workpiece W such as a glass substrate or a semiconductor wafer. Have. The heating chamber 1
Is rectangularly sectioned by a heat insulating material 1a provided inside a metal plate (not shown) constituting an outer cover of the apparatus, and is provided with an openable and closable door 1b for taking in and out the workpiece W. ing. The heating chamber 1 is capable of airtightly connecting a gas inlet and an outlet, so that the object W can be heat-treated by setting the inside of the chamber 1 to a desired atmosphere. The heating source 2 includes a thin film heater 3 connected to a power supply (not shown) and first and second glasses 4 as insulating members.
5, the object W placed on the first glass 4 is heated by the radiant heat of the thin film heater 3. The thin film heater 3 has a thickness of, for example, 50 μm.
It is made of a conductive material such as a stainless steel foil, and has a pattern 3a formed by photo-etching (see also FIG. 2). This pattern 3
“a” is patterned according to the dimensions of the workpiece W and the heating temperature for the workpiece W, and heats the workpiece W so that the internal temperature distribution of the workpiece W becomes uniform. The first and second corners of the pattern 3a are located at the four corners.
A hole 3b for inserting a fixing pin 6 for fixing the thin film heater 3 between the glasses 4 and 5 is provided. One end 3c and the other end 3d of the heater 3 continuous with both ends of the pattern 3a are arranged in the heating chamber 1 in a state where they are inserted through an insulating member such as a deformed glass sleeve (not shown).
And drawn out of the heating chamber 1 through the heat insulating material 1a,
It is connected to the power supply. The first and second glasses 4 and 5 are made of glass ceramic (crystallized glass) such as amorphous quartz glass or neoceram (manufactured by Nippon Electric Glass Co., Ltd.). With the thin film heater 3 covered
Is sandwiched. The holes (not penetrating the surface) provided in the first glass 4 are provided with the above-mentioned pattern 3 during heating.
A plurality of pin members 7 made of aluminum nitride (AlN) or the like for suppressing the deformation of a are attached. In the heat treatment apparatus of the present embodiment configured as described above, the workpiece W is heated by the thin film heater 3 having the pattern 3a, so that the workpiece W having a large size or the workpiece is processed at a high temperature. Even when heating thing W,
The workpiece W can be heated by making the internal temperature distribution of the workpiece W uniform. Therefore, even when the workpiece W having a large size or the workpiece W is heated at a high temperature,
It is possible to uniformly heat the processing target portion W while preventing the occurrence of baking unevenness and thermal distortion, and to prevent the processing quality from deteriorating. In addition, since the object to be processed W can be uniformly heated with a simple configuration using the heating source 2 including the thin film heater 3 in the heating chamber 1, the above-described conventional example provided with the transfer member, the sirocco fan, etc. Unlike this, it is possible to easily reduce the size of the device configuration, to reduce the installation space, and also to easily configure a low-cost device in which the equipment power of the attached members is small. Furthermore, since the pattern 3a is covered with the first and second glasses 4 and 5, dust such as an oxide scale or a metal scale can be prevented from spreading from the pattern 3a into the heating chamber 1,
It is possible to prevent the workpiece W from being contaminated by the dust or the like. According to the test results of the inventor, even when the glass substrate as the object to be processed W is heated at 600 ° C. by the thin film heater 3, the internal temperature distribution becomes almost uniform around 600 ° C. It was confirmed that uniform heating was possible without causing unevenness in baking and thermal distortion on the glass substrate. In the above description, the configuration for heating the workpiece W placed on the first glass 4 has been described. However, the present invention is not limited to this. For example, as shown in FIG. Alternatively, a configuration may be adopted in which the workpiece W is heated while being floated by the support member 8 disposed on the first glass 4. Further, as shown by a dashed line in FIG.
A configuration may be adopted in which another heating source 2 is provided above the heater for heating. In the above description, the first and second glasses 4
5 has been described, but the present invention is not limited to this, and any insulating member having an electrical insulating property capable of sandwiching the thin film heater 3 while covering the pattern 3a. Just fine. The present invention configured as described above has the following effects. According to the heat treatment apparatus of the first aspect, even when the object to be processed having a large size or the object to be heated at a high temperature is heated, the object to be processed can be heated with a uniform internal temperature distribution. It is possible to prevent baking unevenness and thermal distortion from occurring in the processed product. As a result, the object to be processed can be uniformly heated, and a decrease in processing quality can be prevented. In addition, since the object to be processed can be uniformly heated with a simple configuration using a heating source including the above-described thin film heater in the heating chamber, a compact apparatus with reduced equipment costs and running costs can be easily configured. it can. Furthermore, since dust such as an oxide scale or a metal scale can be prevented from spreading into the heating chamber, the object to be treated can be prevented from being contaminated with the dust and the like, and a reduction in treatment quality can be prevented. it can.

【図面の簡単な説明】 【図1】本発明の一実施形態による熱処理装置の要部構
成を示す断面図である。 【図2】(a)は図1に示した加熱源を示す斜視図であ
り、(b)は薄膜ヒータを示す斜視図である。 【図3】別の実施形態の熱処理装置の要部構成を示す断
面図である。 【符号の説明】 1 加熱室 2 加熱源 3 薄膜ヒータ 3a パターン 4,5 第1及び第2ガラス(絶縁部材)
BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a cross-sectional view illustrating a main configuration of a heat treatment apparatus according to an embodiment of the present invention. 2A is a perspective view showing a heating source shown in FIG. 1, and FIG. 2B is a perspective view showing a thin film heater. FIG. 3 is a cross-sectional view illustrating a main configuration of a heat treatment apparatus according to another embodiment. [Description of Signs] 1 Heating chamber 2 Heating source 3 Thin film heater 3a Patterns 4, 5 First and second glass (insulating member)

Claims (1)

【特許請求の範囲】 【請求項1】加熱室と、 前記加熱室内で板状の被処理物を加熱する加熱源とを備
え、 前記加熱源が、前記被処理物の内部温度分布が均一化さ
れるよう当該被処理物を加熱するパターンが作成された
薄膜ヒータと、前記薄膜ヒータのパターンを覆った状態
で当該ヒータを挟持する絶縁部材とを具備することを特
徴とする熱処理装置。
Claims: 1. A heating chamber, and a heating source for heating a plate-like workpiece in the heating chamber, wherein the heating source makes the internal temperature distribution of the workpiece uniform. A heat treatment apparatus comprising: a thin film heater in which a pattern for heating the object to be processed is formed, and an insulating member that sandwiches the heater while covering the pattern of the thin film heater.
JP2001394424A 2001-12-26 2001-12-26 Heat treatment device Pending JP2003194478A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001394424A JP2003194478A (en) 2001-12-26 2001-12-26 Heat treatment device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001394424A JP2003194478A (en) 2001-12-26 2001-12-26 Heat treatment device

Publications (1)

Publication Number Publication Date
JP2003194478A true JP2003194478A (en) 2003-07-09

Family

ID=27601161

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001394424A Pending JP2003194478A (en) 2001-12-26 2001-12-26 Heat treatment device

Country Status (1)

Country Link
JP (1) JP2003194478A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011528501A (en) * 2008-07-16 2011-11-17 株式会社テラセミコン Batch heat treatment apparatus and heater applied to the apparatus
WO2011161913A1 (en) * 2010-06-23 2011-12-29 シャープ株式会社 Heat treatment apparatus and heat treatment method
KR101462849B1 (en) * 2013-06-26 2014-11-19 에스엔유 프리시젼 주식회사 Rapid heat treatment apparatus

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011528501A (en) * 2008-07-16 2011-11-17 株式会社テラセミコン Batch heat treatment apparatus and heater applied to the apparatus
WO2011161913A1 (en) * 2010-06-23 2011-12-29 シャープ株式会社 Heat treatment apparatus and heat treatment method
KR101462849B1 (en) * 2013-06-26 2014-11-19 에스엔유 프리시젼 주식회사 Rapid heat treatment apparatus
WO2014208790A1 (en) * 2013-06-26 2014-12-31 에스엔유 프리시젼 주식회사 Rapid heat-treatment apparatus for thin film

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