JP2003192314A - Method of manufacturing boron nitride nanostructure - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method manufacturing for a boron nitride nanostructure such as a BN nanotube inexpensively, easily and at a high formation rate. <P>SOLUTION: The boron nitride nanostructure is manufactured by melting a boron containing material in the presence of nitrogen, which contains boron and one or more kinds of elements selected from the group consisting of yttrium, niobium, and zirconium. Melting of the boron containing material is conducted, for example, by arc melting. <P>COPYRIGHT: (C)2003,JPO

Description

Detailed Description of the Invention

[0001]

TECHNICAL FIELD The present invention relates to a novel method for producing boron nitride-based nanostructures such as boron nitride nanotubes and nanocones.

[0002]

2. Description of the Related Art Boron nitride nanotubes (hereinafter referred to as BN nanotubes) in which a nitrogen / boron 6-membered ring net has a cylindrical shape are superior in heat resistance, high in insulation property and high in comparison with carbon nanotubes. It is known to have high strength, and is expected to be used as, for example, a hydrogen storage material or a semiconductor material.

The BN nanotube was introduced by Chopra in 1995.
Was the first substance synthesized by the authors using the arc discharge method (NGChopra, RJLuyken, K. Cherrey, VHCresp
i, MLCohen, SGLouie and A. Zettl: Science 269, p
66- (1995)). More specifically, Chopra et al. Used a composite anode in which a tungsten tube was filled with h-BN (hexagonal BN) powder and used helium gas (pressure 650 Torr or about
Arc discharge (discharge voltage 30V, arc current 50A to 150A) is performed in 8.65 × 10 ⁴ Pa) to vaporize the BN powder, and BN nanotubes are obtained as soot deposited on the copper electrode serving as the cathode.

Similarly, Terrones et al. Succeeded in synthesizing BN nanotubes by performing arc discharge in nitrogen gas using a composite anode in which tantalum tube was filled with BN powder (boron nitride powder) (M .Terrones et al.:Che
m. Phys. Lett. 259, p68- (1996)). In addition, as a method for synthesizing BN nanotubes using the arc discharge method, HfB
₂ is formed into a rod-shaped electrode (anode) and HfB ₂ is vaporized by performing arc discharge in nitrogen gas (A.Lois
eau, F. Willaime, N. Demoncy, G. Hug, H. Pascard: Phys.
Rev. Lett.76, p4737- (1996)) and 2) A method of performing arc discharge using a rod-shaped electrode (anode) formed by molding ZrB ₂ (M. Terauchi, M. Tanaka, T. Matsumoto, Y. .Saito: Jou
rnal of Electron Microscopy 47, p319 (1998) has already been developed.

Further, as an example in which the growth of BN nanotubes was observed in addition to the arc discharge, a high pressure nitrogen gas atmosphere (5
Laser heating of c-BN (cubic BN) single crystal flat plate at ˜15 GPa) (DPYu, XSSun, CS
Lee, I. Bello, STLee, HDGu, KMLeung, GWZho
u, ZFDong, Z.Zhang: Appl.Phys.Lett.72, p16 (1998))
Alternatively, a method of heating amorphous boron put in an h-BN crucible under a nitrogen gas atmosphere (GWZhou, Z.Zhang, ZGBai,
DPYu: Solid State Commun. 109, p555 (1999)) and the like.

Furthermore, a method has also been developed in which carbon nanotubes and B ₂ O ₃ are heated in a nitrogen gas atmosphere to replace the carbon nanotubes with BN nanotubes (Japanese Patent Laid-Open No. 2000-109306).

[0007]

However, the method for producing BN nanotubes using the arc discharge method requires a complicated process of producing an anode uniformly containing a nitrogen compound or a boron compound (boride). Yes, it is time-consuming and costly. In addition, since the control of reaction conditions is complicated, an arc discharge device specialized for manufacturing BN nanotubes is required. Further, there is a problem that the production rate of BN nanotubes is relatively low.

Further, the method of heating a c-BN single crystal flat plate by laser and the method of heating amorphous boron in a nitrogen gas atmosphere also have problems such as a relatively low production rate of BN nanotubes.

On the other hand, B described in Japanese Patent Laid-Open No. 2000-109306
In the method for producing N nanotubes, the skeleton of carbon nanotubes is used, and the reaction of substituting its composition from C (carbon) to BN is used. Therefore, the production rate of BN nanotubes is significantly higher than that of the arc discharge method or the like. . However, an extra step of synthesizing the carbon nanotubes is required, which is time-consuming and costly.

The present invention has been made in view of the above conventional problems, and an object thereof is to provide a method capable of inexpensively and easily producing a boron nitride nanostructure such as a BN nanotube at a high production rate. To do.

[0011]

[Means for Solving the Problems] The inventors of the present invention have earnestly studied a novel method for producing a boron nitride nanostructure. As a result, it has been found that by dissolving a boron-containing material having an appropriate composition, a boron nitride-based nanostructure such as a BN nanotube can be manufactured at low cost, easily and with a high production rate, and the present invention is completed. I arrived.

That is, in order to solve the above problems, the method for producing a boron nitride nanostructure according to the present invention is
It is characterized in that it comprises a step of dissolving a boron-containing material containing boron and one or more elements selected from the group consisting of yttrium, niobium and zirconium in the presence of nitrogen.

In the method for producing a boron nitride-based nanostructure according to the present invention, it is more preferable that the above-mentioned boron-containing material is melted by arc melting. More preferably, the contained material is dissolved.

In the method for producing a boron nitride nanostructure according to the present invention, the boron-containing material is YB ₆ , Nb.
More preferably, it comprises one or more compounds selected from B ₂ and ZrB ₂ .

In the method for producing a boron nitride-based nanostructure according to the present invention, it is more preferable to dissolve the boron-containing material in the presence of one or more Group 8 transition metals.

[0016]

BEST MODE FOR CARRYING OUT THE INVENTION [First Embodiment] The following will describe one embodiment of the present invention with reference to the drawings. The scope of rights of the present invention is not particularly limited to the description of this embodiment.

A novel method for producing a boron nitride nanostructure according to the present invention is a method comprising a step of dissolving a boron-containing material described below in the presence of nitrogen. If this method is adopted, it becomes possible to inexpensively and easily produce a large amount of boron nitride nanostructures at an extremely high yield (see Examples). The reason for this is not entirely clear, but yttrium (Y), niobium (Nb), which are contained in the boron-containing material,
Alternatively, since the enthalpy of formation when forming a compound between zirconium (Zr) and boron is extremely small (that is, the reactivity of this compound is high), boron, Y, N
It is considered that the coexistence of b or Zr causes a specific catalytic activity. In addition, in the method of instantly vaporizing the boron-containing material like the normal arc discharge method,
The time from the heating of the boron-containing material to the cooling (reaction time) is considered to be several seconds or less, but in the production method according to the present invention, the reaction time is longer by dissolving the boron-containing material. . Therefore, it is considered that the yield of the boron nitride-based nanostructure is higher and the crystal grains can be grown larger. Further, a powdery material can be used as the boron-containing material. Hereinafter, the present invention will be described in more detail.

In the present invention, the term "boron nitride nanostructure" means a nanotube, a nanocone, a nanocage, a nanocapsule, a nanochaplet, or a fullerene, which has a network structure (net) formed by a bond between nitrogen and boron as a basic skeleton. Refers to nanoscale structures such as. These nanoscale structures may have a single-layer structure or a multi-layer structure. Further, a part of the basic skeleton may be substituted with an atom other than nitrogen or boron, for example, a carbon atom (C) or an oxygen atom (O), or other than nitrogen (N) or boron (B). It may include at least one of an atom (eg, yttrium, niobium, zirconium, or a Group 8 transition metal) or a compound containing the atom (eg, boride, nitride, etc.).

In the present invention, the above "boron-containing material" refers to a mixture or compound containing one or more elements selected from the group consisting of yttrium, niobium and zirconium (referred to as essential metal a) and boron. .

The boron-containing material as a compound is an essential gold
Especially limited if it is a boride of genus a (solid at room temperature and pressure)
Although not specified, specifically, for example, YB₆, NbB₂, Z
rB ₂Are exemplified as particularly preferable. Meanwhile, mixed
The boron-containing material as a substance is a simple substance of the essential metal a or
Any of the compounds, either elemental boron or boride
Especially limited as long as it is a mixture containing and (solid at room temperature and pressure)
Not determined. For example, increase the ratio of boron to essential metal a
In order to achieve this, the boride of the essential metal a and boron alone are mixed.
Combined mixtures are also included in the category of boron-containing materials above.
Be done. Needless to say, these boron-containing materials
May be used alone or in combination of two or more
May be.

The content ratio of the essential metal A and the boron in the boron-containing material is not particularly limited, but from the viewpoint that the production rate of the boron nitride nanostructure is particularly good, the atomic ratio (essential metal a: B) 10: 1 to 1:10
More preferably within the range of 0, 1: 1 to 1: 1
More preferably, it is within the range of 0.

The shape of the above-mentioned boron-containing material is not particularly limited, but in order to uniformly and easily dissolve the material, it should be in the form of powder having an average particle size of 0.001 to 1000 μm. Is more preferable, and 0.01
More preferably, it is in the form of powder in the range of μm to 10 μm. The powdery boron-containing material may be molded into a solid (pellet) form.

In the present invention, "nitrogen" is supplied to the above boron-containing material in the form of nitride or nitrogen alone. The type and state of "nitrogen" are not particularly limited, but from the viewpoint of easy supply, a nitrogen-based gas such as ammonia gas or nitrogen gas, particularly a neutral or reducing nitrogen-based gas is more preferable, and Nitrogen gas is particularly preferable from the viewpoint that it does not contain reaction unnecessary substances and is inexpensive and highly safe. When the boron-containing material contains molecular nitrogen or nitride, “nitrogen” may be supplied from the boron-containing material.

The supply amount of the above "nitrogen" is not particularly limited, but from the viewpoint that the production rate of the boron nitride nanostructures is particularly good, the atomic ratio to boron (nitrogen: boron) is set. The supply is more preferably 10: 1 or more, further preferably 1: 1 or more.

The boron nitride-based nanostructure according to the present invention is produced by a step (dissolution step) of dissolving the above-described boron-containing material in the presence of "nitrogen". The temperature at which the boron-containing material is dissolved is not particularly limited as long as it is a temperature at which the boron-containing material becomes liquid (liquid phase), that is, the melting point or higher. However, when the boron-containing material is YB ₆ , NbB ₂ , or ZrB ₂ , the lower limit of the temperature during the melting step is more preferably 3300 ° C. or higher for the reason of accelerating the reaction with nitrogen. It is more preferably 3500 degrees or more.

In the melting step, nickel (Ni), palladium (Pd), platinum (Pt), cobalt (Co), rhodium (Rh), iridium (Ir), iron (Fe), ruthenium (Ru), osmium ( More preferably, it is carried out in the presence of at least one Group 8 transition metal selected from the group consisting of Os). It is considered that these Group 8 transition metals function as good metal catalysts that accelerate the formation reaction of boron nitride nanostructures (mainly the reaction between boron and nitrogen gas). In addition, by adding these Group 8 transition metals,
Depending on the reaction conditions, different configurations of boron nitride nanostructures can be obtained.

When the above Group 8 transition metal is used, the amount used is not particularly limited, but the atomic ratio to boron contained in the boron-containing material (Group 8 transition metal: boron) is 10: It is more preferably within the range of 1 to 1: 100, and even more preferably within the range of 1: 1 to 1: 100. Further, the Group 8 transition metal used may be a simple substance or a compound, and the grain system and the like when the Group 8 transition metal is used in the form of powder are not particularly limited. Absent.

Subsequent to the melting step, a step of cooling the reaction system (cooling step) is performed to manufacture the boron nitride nanostructure according to the present invention. The cooling step does not have to be forced cooling using a cooling source, and the reaction system may be left after the dissolution step and wait until it naturally cools down to, for example, room temperature.

Whether or not a boron nitride nanostructure is formed and its composition are confirmed by, for example, analysis by X-ray spectroscopy (EDX) (composition analysis method) or a lattice image by high resolution electron microscope (HREM). It may be performed by a conventionally known method such as observation and electron diffraction analysis.

It is known that boron nitride-based nanostructures are chemically stable and mechanically tougher than carbon nanostructures having a similar structure. Therefore, the boron nitride-based nanostructure obtained in the present invention is, for example,
The carbon nanostructure is more preferably used as an emitter material, a heat resistant material, a high strength material, a gas storage material, and the like. Since hydrogen gas, a gas such as argon gas, the step of storing in the nanostructure is performed under pressure conditions,
When the nanostructure is used as a gas storage material, its mechanical toughness is important. Further, the boron nitride-based nanostructure as a semiconductor has a wider bandgap than the carbon nanostructure, is chemically stable, and has substantially no change in semiconductor characteristics regardless of the diameter size or the presence or absence of helicity.
Since the boron nitride-based nanostructure obtained in the present invention is used as a semiconductor material, it has a great advantage. In addition, the boron nitride-based nanostructure obtained in the present invention may be used as an insulating material such as a coating material for nanocable, or as a catalyst.

The above-described step of melting the boron-containing material is particularly preferably performed by the arc melting method. The arc melting method is a method of heating and melting the above boron-containing material by heat generated by an arc, and it is easy to prepare high temperature conditions necessary for the melting step, and the condition control is relatively easy, and the like. Have. The type of the arc melting method may be either a method using a direct current arc or a method using an alternating current arc. Generally, the method using a direct current arc is more suitably adopted because of the ease of control and the easy recovery of products. Further, the boron-containing material may be melted by directly applying an electric current with an arc (direct method), or the boron-containing material may be indirectly heated and melted using an arc generated between the electrodes (indirect method). ). From the viewpoint of simplifying the structure of the arc melting furnace without providing electrodes in pairs and in terms of power utilization efficiency, the direct formula is more preferably adopted.

The arc conditions such as arc voltage, arc current and arc time in the process of performing arc melting are not particularly limited as long as the above boron-containing material can be melted and the boron nitride-based nanostructure can be produced. However, for example, in the case of the direct type, the arc voltage is 50 V to 3 V.
More preferably, it is in the range of 00 V, the arc current is more preferably in the range of 50 A to 300 A, and the arc time is more preferably in the range of 1 second to 1000 seconds.

The atmospheric pressure condition in the step of performing arc melting is not particularly limited as long as arc generation is possible, but in general, it is more preferable to carry out under conditions close to vacuum. At the time of arc melting, a nitrogen gas as a raw material and an inert gas such as an argon gas, a helium gas or a neon gas, which is optionally accompanied, are generally used as a raw material gas. The total pressure of the raw material gas is not particularly limited, but is preferably 0.5 MPa or less, and more preferably 0.1 MPa or less in order to realize arc melting conditions close to vacuum. .

When the above-mentioned "nitrogen" is supplied as a nitrogen-based gas in arc melting, the ratio (volume%) of the nitrogen-based gas to the total gas is not particularly limited as long as the required reaction amount is supplied. Absent. However, from the viewpoint of improving the production rate of boron nitride nanostructures, the lower limit of the above ratio is more preferably 20% or more, further preferably 40% or more, and particularly preferably 45% or more. preferable. Further, from the viewpoint that the arc discharge voltage (synonymous with the arc voltage) is in an industrially suitable range and smooth discharge is facilitated, the upper limit value of the above ratio is more preferably 80% or less, and 60% or less. More preferably, it is particularly preferably 55% or less.

The main part of the arc melting furnace for performing the above-mentioned direct type arc melting is, as shown in the cross section in FIG. 1, an electrode 1 made of, for example, tungsten (W), and a pellet 2 containing a boron-containing material. Copper hearth (hearth) on which to place 3
And a vacuum chamber 4 including. The vacuum chamber 4 is further connected with a vacuum pump and a vacuum valve for adjusting the degree of vacuum inside, a gas introduction path for introducing a gas such as the above-mentioned nitrogen gas and inert gas, and an electric circuit system. However, these are not shown. An arc melting furnace having such a configuration is already known as, for example, an arc melting furnace for melting a metal, and detailed description thereof will be omitted.

[0036]

The present invention will be described in more detail below with reference to the drawings based on Examples 1 to 3 and Comparative Examples 1 and 2. The present invention is not particularly limited to the description of the following examples.

Example 1 YB ₆ which is a boron-containing material
Ultra-small vacuum arc melting furnace (product number: NEV-AD03) manufactured by Nisshin Giken Co., Ltd., for arc melting of 3 g of powder (purity 99.6%, particle size 3 to 6 μm, manufactured by Kojundo Chemical Laboratory)
Was performed in the following manner. The structure of the main part of the micro vacuum arc melting furnace is as shown in FIG.

First, the YB ₆ powder was placed on the copper hearth 3 provided in the arc melting furnace, and the inside of the vacuum chamber 4 was set to 10 ^-3 P.
The pressure was reduced to a. Then, argon gas (partial pressure 0.02
A mixed gas of 5 MPa) and nitrogen gas (partial pressure 0.025 MPa) was introduced into the vacuum chamber 4, and an arc voltage of 200
Arc melting was performed under the arc melting conditions of V, arc current of 125 A, and time of 10 seconds (arc melting step). Then, the interior of the vacuum chamber 4 was allowed to stand until it became equivalent to room temperature (cooling step), and 10 mg of white to off-white powder (boron nitride nanostructure) was obtained on the copper hearth 3.

The composition of the produced powder is R-TEM (ED
X-ray spectroscopic analysis (ED) (trade name of AX)
X), and the structural analysis of the powder is transparent high resolution.
Noh electron microscope (HREM) JEM-3000F
(Trade name, manufactured by Kako Co., Ltd.). In Figure 2, Eck
The results of the X-ray spectroscopic analysis are shown in FIGS.
The observation results of JEM-3000F are shown in (a) to (c).
You As shown in FIG. 2, the produced powder has nitrogen and hydrogen.
The main component is silicon, and yttrium (YB ₆Into powder
Origin), copper (copper hearth 3 or HREM sample mesh
Origin) and oxygen as sub-components. Well
In addition, the peaks of boron (B) and nitrogen (N) are both shear.
Atomic composition of the obtained boron nitride nanostructure
(B: N) was determined to be approximately 1: 1. further,
3 (a)-(c) and 4 (a)-(c).
As described above, the produced powder has a multi-walled nanotube structure (nitride foil).
It has been confirmed that they form a silicon-based nanostructure).

The production rate of the boron nitride-based nanostructure (production amount of boron nitride-based nanostructure (mg) / amount of powder collected (10 mg) × 100 (%)) was calculated to be extremely high at 90%. It was confirmed that

[Example 2] The same procedure as described above was performed except that 3 g of NbB ₂ powder (purity: 99%, particle size: about 5 μm, manufactured by Kojundo Chemical Laboratory Co., Ltd.), which is a boron-containing material, was used instead of 3 g of YB ₆ powder. The arc melting step and the cooling step were performed as described in Example 1 to obtain 10 mg of white to off-white powder (boron nitride nanostructure) on the copper hearth 3.

The structural analysis of the produced powder was performed by a transmission high resolution electron microscope (HREM) JEM-3000F (trade name of JEOL Ltd.). 5 (a) shows the observation results of JEM-3000F, and FIG. 5 (b) shows the results of FIG.
The observation result which expanded the circled part in (a) is shown. As shown in the figure, it was confirmed that the produced powder had a multi-layered nanotube structure (boron nitride nanostructure).

The production rate of boron nitride nanostructures (production amount of boron nitride nanostructures (mg) / amount of powder collected (10 mg) × 100 (%)) was calculated to be extremely high at 80%. It was confirmed that

Example 3 YB ₆ which is a boron-containing material
Powder (purity 99.6%, particle size 3-6 μm, manufactured by Kojundo Chemical Laboratory Co., Ltd.) and Ni powder (purity 99%, particle size 3-5 μm,
(Manufactured by Kojundo Chemical Laboratory Co., Ltd.) were uniformly mixed in a mortar to prepare 3 g of mixed powder. The atomic ratio of Y and Ni in the mixed powder was 1: 1. Then, instead of YB ₆ powder,
The arc melting step and cooling step were performed as described in Example 1 except that 3 g of the mixed powder was used, and white to off-white powder (boron nitride nanostructures) was formed on the copper hearth 3.
10 mg was obtained.

The structural analysis of the produced powder was carried out with a transmission high resolution electron microscope (HREM) JEM-3000F (trade name of JEOL Ltd.). The observation result of JEM-3000F is shown in FIG.
The observation result which expanded (a) is shown. As shown in the figure,
It was confirmed that the generated powder was composed of a plurality of nanotube structures (boron nitride nanostructures) assembled in a bundle. That is, the aggregate of the nanotube structures (boron nitride nanostructures) 12 obtained in this example is shown in FIG.
As schematically shown in (a) to (c), a plurality of nanotube constituents (boron nitride nanostructures) 11 are gathered in a bundle. 7A to 7C, black circles represent boron atoms and white circles represent nitrogen atoms.

The production rate of the boron nitride nanostructures (production amount of boron nitride nanostructures (mg) / amount of powder collected (10 mg) × 100 (%)) was calculated to be about 90%, which was extremely high. It was confirmed to be high.

Comparative Example 1 Instead of 3 g of YB ₆ powder, L
The arc melting step and cooling step were performed as described in Example 1 above, except that 3 g of aB ₆ powder (purity 99%, particle size about 1 μm, manufactured by Kojundo Chemical Laboratory Co., Ltd.) was used, and copper hearth 3
White to off-white powder (boron nitride nanostructure) on top 1
0 mg was obtained. The production rate of the boron nitride nanostructures (amount of boron nitride nanostructures produced (mg) / amount of powder collected (10 mg) × 100 (%)) was calculated to be about 10
It was confirmed to be extremely low as%.

Comparative Example 2 VB was used instead of 3 g of YB ₆ powder.
The arc melting step and cooling step were performed as described in Example 1 above, except that 3 g of B ₂ powder (purity 99%, particle size of about 100 μm, manufactured by Kojundo Chemical Laboratory Co., Ltd.) was used. However, almost no boron nitride-based nanostructures were formed on the copper hearth 3, except for a small amount of boron nitride nanocapsules.

[0049]

As described above, the method for producing a boron nitride-based nanostructure according to the present invention is a boron-containing material containing boron and one or more elements selected from the group consisting of yttrium, niobium and zirconium. Is dissolved in the presence of nitrogen.

According to the above-mentioned method, it is possible to provide a method capable of manufacturing a boron nitride nanostructure at a low cost, easily and with a high production rate.

In the method for producing a boron nitride nanostructure according to the present invention, in the above method, it is more preferable that the boron-containing material is melted by arc melting.

According to the above method, it is possible to easily prepare the high temperature conditions necessary for the step of dissolving the boron-containing material, and it is possible to control the reaction conditions relatively easily.

In the method for producing a boron nitride nanostructure according to the present invention, in the above method, the boron-containing material contains at least one compound selected from YB ₆ , NbB ₂ and ZrB _2. Is more preferable.

According to the above-mentioned method, there is an additional effect that a method capable of producing a boron nitride-based nanostructure with a particularly high production rate can be provided.

In the method for producing a boron nitride nanostructure according to the present invention, it is more preferable to dissolve the above boron-containing material in the presence of one or more Group 8 transition metals.

According to the above method, the production reaction of the boron nitride-based nanostructure is promoted and the boron nitride-based nanostructure having a different structure depending on the conditions can be obtained.

[Brief description of drawings]

FIG. 1 is a cross-sectional view showing a schematic configuration of a main part of an arc melting furnace used in a method for producing a boron nitride-based nanostructure according to the present invention.

FIG. 2 is a chart showing the results of X-ray spectroscopic analysis (EDX) of a boron nitride-based nanostructure obtained in one example of the present invention.

3 (a) to 3 (c) are drawings showing the results of structural analysis of a boron nitride nanostructure obtained in one example of the present invention using a transmission high resolution electron microscope.

4 (a) to (c) are drawings showing the results of structural analysis of a boron nitride-based nanostructure obtained in one example of the present invention with a transmission high-resolution electron microscope.

5 (a) is a drawing showing the results of structural analysis of a boron nitride-based nanostructure obtained in another example of the present invention with a transmission high-resolution electron microscope, FIG. Is
It is drawing which expands and shows the circled part in (a).

6 (a) and 6 (b) are drawings showing the results of structural analysis of a boron nitride-based nanostructure obtained in still another example of the present invention using a transmission high-resolution electron microscope. is there.

7 (a) to (c) are drawings schematically showing the three-dimensional structure of the boron nitride-based nanostructure shown in FIGS. 6 (a) and 6 (b).

[Explanation of symbols]

2 Pellet (boron-containing material) 11 Nanotube composition (boron nitride nanostructure) 12 Aggregate (boron nitride nanostructure)

Claims (4)

[Claims] 1. A nitriding step, which comprises dissolving a boron-containing material containing boron and one or more elements selected from the group consisting of yttrium, niobium and zirconium in the presence of nitrogen. Method for producing boron-based nanostructure. 2. The method for producing a boron nitride-based nanostructure according to claim 1, wherein the melting of the boron-containing material is performed by arc melting. 3. The boron-containing material is YB ₆ , NbB ₂ ,
The method for producing a boron nitride nanostructure according to claim 1 or 2, comprising one or more compounds selected from ZrB ₂ . 4. The boron nitride-based nanostructure according to claim 1, wherein the boron-containing material is dissolved in the presence of one or more Group 8 transition metals. Production method.