JP2003188147A - サファイア結合構造体の製造方法 - Google Patents
サファイア結合構造体の製造方法Info
- Publication number
- JP2003188147A JP2003188147A JP2002322565A JP2002322565A JP2003188147A JP 2003188147 A JP2003188147 A JP 2003188147A JP 2002322565 A JP2002322565 A JP 2002322565A JP 2002322565 A JP2002322565 A JP 2002322565A JP 2003188147 A JP2003188147 A JP 2003188147A
- Authority
- JP
- Japan
- Prior art keywords
- lattice
- component
- sapphire
- plane
- panel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052594 sapphire Inorganic materials 0.000 title claims abstract description 58
- 239000010980 sapphire Substances 0.000 title claims abstract description 58
- 238000000034 method Methods 0.000 title claims abstract description 38
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 17
- 239000013078 crystal Substances 0.000 claims abstract description 36
- 239000000463 material Substances 0.000 claims abstract description 30
- 238000012545 processing Methods 0.000 claims abstract description 8
- 238000010438 heat treatment Methods 0.000 claims abstract description 6
- 230000000737 periodic effect Effects 0.000 claims abstract description 5
- 238000013016 damping Methods 0.000 claims description 11
- 239000000470 constituent Substances 0.000 claims description 9
- 238000003754 machining Methods 0.000 claims description 7
- 230000005496 eutectics Effects 0.000 claims description 4
- 238000005259 measurement Methods 0.000 claims description 4
- 239000000155 melt Substances 0.000 claims description 3
- 238000005498 polishing Methods 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 8
- 229910052710 silicon Inorganic materials 0.000 abstract description 8
- 239000010703 silicon Substances 0.000 abstract description 8
- 235000012431 wafers Nutrition 0.000 abstract description 8
- 239000004065 semiconductor Substances 0.000 abstract description 5
- 238000011109 contamination Methods 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 description 6
- 238000002844 melting Methods 0.000 description 5
- 230000008018 melting Effects 0.000 description 5
- 239000013598 vector Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 239000011737 fluorine Substances 0.000 description 3
- 239000011230 binding agent Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229910052727 yttrium Inorganic materials 0.000 description 2
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 2
- 238000005162 X-ray Laue diffraction Methods 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000007767 bonding agent Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005388 cross polarization Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000011112 process operation Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000004936 stimulating effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/20—Aluminium oxides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/06—Joining of crystals
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/007606 | 2001-11-07 | ||
| US10/007,606 US6663736B1 (en) | 2001-11-07 | 2001-11-07 | Method for making a bonded sapphire structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2003188147A true JP2003188147A (ja) | 2003-07-04 |
| JP2003188147A5 JP2003188147A5 (OSRAM) | 2005-12-22 |
Family
ID=27608942
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002322565A Pending JP2003188147A (ja) | 2001-11-07 | 2002-11-06 | サファイア結合構造体の製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US6663736B1 (OSRAM) |
| JP (1) | JP2003188147A (OSRAM) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103864452B (zh) * | 2012-12-10 | 2015-10-21 | 富泰华精密电子（郑州）有限公司 | 面板及其制造方法 |
| US9915756B2 (en) | 2015-07-28 | 2018-03-13 | Raytheon Company | Large area format sapphire windows via transient liquid phase bonding |
| RU2630811C1 (ru) * | 2017-03-13 | 2017-09-13 | федеральное государственное бюджетное образовательное учреждение высшего образования "Национальный исследовательский университет "МЭИ" (ФГБОУ ВО "НИУ "МЭИ") | Способ формирования полых монокристаллических цилиндрических трубок |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02124800A (ja) * | 1988-07-04 | 1990-05-14 | Hiroaki Aoshima | 一体同化した合成コランダムの単結晶構造体の製造方法 |
| US4939101A (en) * | 1988-09-06 | 1990-07-03 | General Electric Company | Method of making direct bonded wafers having a void free interface |
| US4925608A (en) * | 1988-09-27 | 1990-05-15 | Norton Company | Joining of SiC parts by polishing and hipping |
| US5201977A (en) * | 1989-08-09 | 1993-04-13 | Hiroaki Aoshima | Process for producing structures from synthetic single-crystal pieces |
| US5423942A (en) | 1994-06-20 | 1995-06-13 | Texas Instruments Incorporated | Method and apparatus for reducing etching erosion in a plasma containment tube |
| US6284085B1 (en) * | 1997-04-03 | 2001-09-04 | The Board Of Trustees Of The Leland Stanford Junior University | Ultra precision and reliable bonding method |
| US6012303A (en) * | 1997-06-11 | 2000-01-11 | Saphikon, Inc. | Eutectic bonding of single crystal components |
-
2001
- 2001-11-07 US US10/007,606 patent/US6663736B1/en not_active Expired - Lifetime
-
2002
- 2002-11-06 JP JP2002322565A patent/JP2003188147A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| US6663736B1 (en) | 2003-12-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6201634B1 (en) | Optical element made from fluoride single crystal, method for manufacturing optical element, method for calculating birefringence of optical element and method for determining direction of minimum birefringence of optical element | |
| EP4108814A1 (en) | Method for preparing large-size single crystal | |
| KR20250016416A (ko) | 갈라짐 감소를 위한 격자 평면들의 최적 배향을 갖는 SiC 결정성 기재 및 그 제조 방법 | |
| EP0942297A2 (en) | Optical element made from fluoride single crystal and method of manufacturing the optical element | |
| EP0456060B1 (en) | Process for bonding synthetic singel crystals | |
| US20030177975A1 (en) | Rare earth-iron garnet single crystal material and method for preparation thereof and device using rare earth-iron garnet single crystal material | |
| JP2003188147A (ja) | サファイア結合構造体の製造方法 | |
| EP1533402B1 (en) | Epitaxial wafer and its manufacturing method | |
| Sarukura et al. | Czochralski growth of oxides and fluorides | |
| US9428843B2 (en) | Rare earth oxyorthosilicate scintillation crystals | |
| US20060281283A1 (en) | Silicon epitaxial wafer, and silicon epitaxial wafer manufacturing method | |
| EP3537188B1 (en) | Color wheel and method for manufacturing a color wheel | |
| US9682495B2 (en) | Method and apparatus for processing sapphire | |
| CN111037765A (zh) | 具有目标晶面表面的钛单晶及其制备方法 | |
| EP2390685A1 (en) | Method for manufacturing single crystal optical lens | |
| KR100607890B1 (ko) | 막두께 측정용 모니터 웨이퍼 | |
| US12487478B2 (en) | Optical isolator | |
| JP6512369B1 (ja) | 半絶縁性化合物半導体基板および半絶縁性化合物半導体単結晶 | |
| US4614428A (en) | High-temperature, high-pressure optical cell | |
| KR102886352B1 (ko) | 단일 결정 금속 옥사이드 플라즈마 챔버 컴포넌트 | |
| KR100288044B1 (ko) | 에칭방법에 의한 실리콘 단결정봉의 베이컨시 형태의 결함 영역 측정방법 | |
| JPH07183240A (ja) | 半導体製造用治具の製造方法 | |
| Shiroki | Influence of Thermal Conditions during the Course of Crystal Growth on the Qualities of a Ruby Single Crystal | |
| JP4539053B2 (ja) | 単結晶基板及びその製造方法 | |
| JPH0354184A (ja) | 結晶製造用るつぼ |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20051104 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20051104 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20081015 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20081028 |
|
| A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20090127 |
|
| A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20090130 |
|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20090714 |