JP2003179296A - Semiconductor laser module - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor laser module in which a high output of a semiconductor laser element 2 and use under a high temperature environment can be achieved readily. <P>SOLUTION: In the bottom wall 4a of a package 4, a heat pipe 20 is buried to extend from the abutting region of a Peltier module 5 to the outside along the bottom wall face. The heat pipe 20 led out to the outside of the package 4 is provided with heat radiation fins 21. Heat emitted from the heat generating side 5c of the Peltier module 5 is absorbed to the heat pipe 20 under a state of high heat density before being diffused, and the heat of the Peltier module 5 is transmitted by the heat pipe 20 to the outside and discharged. Since heat on the heat generating side 5c of the Peltier module 5 can be discharged efficiently to the outside, the temperature of the high output semiconductor laser element 2 can be kept at a constant level. <P>COPYRIGHT: (C)2003,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor laser module, and more particularly to a semiconductor laser module suitable for use in a high output and high temperature environment.

[0002]

BACKGROUND ART FIG. 6 is a schematic sectional view showing an example of the structure of a semiconductor laser module. The semiconductor laser module 1 is a module in which a semiconductor laser element 2 is arranged inside a package 4 in an optical coupling state with an optical fiber 3. In this semiconductor laser module 1, a Peltier module 5 for controlling the temperature of the semiconductor laser element 2 is provided inside the package 4 with a bottom wall 4a.
It is fixed to.

The Peltier module 5 includes two insulating substrates 5 in which P-type Peltier elements 5a which are P-type semiconductors and N-type Peltier elements 5a which are N-type semiconductors are alternately arranged.
It is arranged between b and 5c and is formed by connecting these P-type and N-type Peltier elements 5a in series. In this Peltier module 5, the insulating substrate 5b on one side is a cooling side substrate and the insulating substrate 5c on the other side is a heating side substrate. By supplying a direct current to the Peltier element 5a, the Peltier element 5a is connected. Thus, the cooling side substrate 5b is cooled.

Here, the Peltier module 5 is fixed inside the package 4 by abutting the heat generation side substrate 5c on the bottom wall 4a of the package 4, and the semiconductor laser device is provided above the cooling side substrate 5b via the base 6. 2 are arranged,
By controlling the amount of electricity supplied to the Peltier element 5a, the temperature of the semiconductor laser element 2 is controlled by adjusting the degree of cooling of the cooling-side substrate 5b by the Peltier element 5a.

When the semiconductor laser element 2 is driven, the temperature of the semiconductor laser element 2 rises due to heat generation of the semiconductor laser element 2 itself. This temperature rise causes a change in the oscillation wavelength of the emitted light of the semiconductor laser element 2 and the optical output. Therefore, the thermistor 7 is provided near the semiconductor laser element 2,
The temperature of the semiconductor laser device 2 is measured by the thermistor 7, and the amount of current supplied to the Peltier device 5a of the Peltier module 5 is adjusted based on the measured value to keep the temperature of the semiconductor laser device 2 constant. Temperature control. As a result, the semiconductor laser device 2
We are trying to stabilize the characteristics of.

Not only the semiconductor laser element 2 and the thermistor 7 are provided on the base 6 provided on the cooling side substrate 5b of the Peltier module 5, but also the light emission state of the semiconductor laser element 2 is monitored via the support portion 8. A photodiode 9 for doing so is arranged. Further, an aspherical lens 10 is provided on the base 6 via a lens holder (not shown).
Is also fixed.

A through hole 11 is formed in the side wall 4b of the package 4, and a ferrule 12 is fitted inside the through hole 11. The front end side of the optical fiber 3 is fixed to the ferrule 12. A condenser lens 13 is fixed inside the through hole 11. Further, inside the package 4, the semiconductor laser element 2 to the lens 1
An isolator 14 is provided on the path of light passing through 0 and 13 to the end face of the optical fiber 3. The isolator 14 is for removing return light. Furthermore, in order to prevent the semiconductor laser element 2 from being oxidized, the inside of the package 4 is hermetically sealed while being filled with a sealing gas such as nitrogen or argon.

Such a semiconductor laser module 1 is
For example, it is fixed on the heat sink 15 with screws 16, and the heat generated from the heat-generating side substrate 5c of the Peltier module 5 is transferred to the heat sink 15 through the package 4 and discharged to the outside.

In the semiconductor laser module 1 as described above, the light emitted from the semiconductor laser element 2 is condensed through the aspherical lens 10, the isolator 14 and the condenser lens 13 and is incident on the end face of the optical fiber 3. Then, the light incident on the optical fiber 3 propagates through the optical fiber 3 and is supplied to a desired place.

[0010]

The semiconductor laser module 1 as described above is required to have a high optical output and be usable in a high temperature environment. . When the output of the semiconductor laser element 2 is increased to meet this demand, the amount of heat generated by the semiconductor laser element 2 inevitably increases. For this reason, the heat generated by the semiconductor laser element 2 must be discharged more efficiently than before.

From this, it is conceivable to increase the size of the Peltier module 5. However, when using the large Peltier module 5, the following problems occur. For example, in the large Peltier module 5, the heat absorption amount of the cooling side substrate 5b increases and the heat generation side substrate 5b increases.
The calorific value of c will increase.

The heat of the heat generating side substrate 5c is transferred to the cooling side substrate 5
b, and the situation in which heat is transferred to the semiconductor laser element 2 through the base 6 also occurs, and it becomes difficult to keep the temperature of the semiconductor laser element 2 constant.

Further, the heat of the heat generating side substrate 5c diffuses from the bottom wall 4a of the package 4 to the side wall 4b, and the heat is radiated from the package 4, and the heat causes a recirculation of the sealing gas inside the package 4. As a result, the cooling efficiency of the Peltier module 5 is lowered, and the power consumption of the Peltier module 5 is increased.

Therefore, various means for solving such a problem have been proposed, but a satisfactory one has not been proposed yet.

An object of the present invention is to keep the temperature of the semiconductor laser element constant by efficiently driving the Peltier module with low power consumption even when the semiconductor laser element has a high output and is used in a high temperature environment. It is to provide a semiconductor laser module that can be kept at

[0016]

In order to achieve the above object, the present invention has the following constitution as means for solving the above problem. That is, the first invention is a semiconductor laser module in which a semiconductor laser device is arranged inside a package in an optical coupling state with an optical fiber, and has a Peltier module for controlling the temperature of the semiconductor laser device. , The cooling side is directed to the semiconductor laser element side, and the heat generating side is in contact with the bottom wall of the package, and is arranged inside the package. A heat pipe extending from the contact area of the Peltier module to the outside along the bottom wall surface is embedded, and the heat generated from the heat generating side of the Peltier module is exhausted to the outside through the heat pipe. I am trying.

A second invention comprises the structure of the first invention,
It is characterized in that heat radiation fins are attached to the heat pipe drawn out of the package.

A third aspect of the invention is a semiconductor laser module in which a semiconductor laser element is arranged inside a package in an optically coupled state with an optical fiber, and which has a Peltier module for controlling the temperature of the semiconductor laser element. Directs the cooling side to the semiconductor laser element side,
In addition, the heat generating side is disposed inside the package in a posture in which the heat generating side is in contact with the bottom wall of the package, and at least the contact area of the Peltier module is at least the other part of the package in the bottom wall of the package. It is characterized by being formed of a material having a higher thermal conductivity than that of the above.

A fourth invention comprises the structure of the third invention,
The material having a high thermal conductivity forming at least the contact region of the Peltier module on the bottom wall of the package is characterized by being a carbon composite material having a direction of heat conduction from the inside of the package to the bottom surface.

A fifth aspect of the present invention is a semiconductor laser module in which a semiconductor laser element is arranged inside a package in an optically coupled state with an optical fiber, and which has a Peltier module for controlling the temperature of the semiconductor laser element. Directs the cooling side to the semiconductor laser element side,
In addition, the heat generating side is disposed inside the package in a position in which the heat generating side is in contact with the bottom wall of the package, and the bottom wall of the package is made of a material having a higher thermal conductivity than other parts of the package. The bottom wall of this package has a heat-radiating extension that extends to the outside.The heat generated from the heat generating side of the Peltier module is transferred from the Peltier module contacting portion of the bottom wall of the package to the heat-radiating extension. It is characterized by having a structure in which heat is transferred and heat is exhausted to the outside.

A sixth invention comprises the configuration of the fifth invention,
A heat radiation fin is attached to the heat radiation expansion portion of the bottom wall of the package.

A seventh aspect of the invention has the structure of the fifth or sixth aspect of the invention, wherein the material forming the bottom wall of the package conducts heat in the direction from the Peltier module contact area of the package to the heat dissipation extension. It is characterized by being a carbon composite material with directionality.

An eighth aspect of the invention has the structure of any one of the first to seventh aspects of the invention, wherein a heat insulating member for preventing heat radiation from the bottom wall of the package to the inside of the package is on the bottom wall surface inside the package. It is characterized in that it is arranged avoiding the Peltier module contact area.

A ninth aspect of the invention has the structure of any one of the third to eighth aspects of the invention, wherein the heat extending from the contact area of the Peltier module to the outside along the bottom wall is provided inside the bottom wall of the package. The feature is that the pipe is buried.

A tenth aspect of the invention has the structure of the first, second or ninth aspect of the invention, and in place of the heat pipe, the direction of heat conduction in the direction of guiding the heat generated from the heat generating side of the Peltier module to the outside. It is characterized in that a member made of a carbon composite material having is embedded inside the bottom wall of the package.

[0026]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the drawings.

FIG. 1A is a schematic sectional view showing a structural example of the semiconductor laser module of the first embodiment. In the description of the first embodiment, the same components as those of the semiconductor laser module of FIG. 6 are designated by the same reference numerals, and the duplicate description of the common portions will be omitted.

In the first embodiment, the heat pipe 20 is embedded in the bottom wall 4a of the package 4. The heat pipe 20 extends inside the package bottom wall 4a from the contact region of the Peltier module 5 to the outside along the bottom wall surface, and guides the heat generated from the heat generating side substrate 5c of the Peltier module 5 to the outside. Have.
Here, the heat radiating fins 21 are provided in the heat pipe 20 portion drawn out from the package 4, and the heat generated from the heat generating side substrate 5c is transferred to the outside of the package 4 through the heat pipe 20. , Radiation fin 21
Is efficiently exhausted.

In the first embodiment, the radiation fin 21
The heat of the radiating fins 21 may be radiated by applying wind to the radiating fins, or the heat of the radiating fins 21 may be naturally radiated. Moreover, the radiation fin 2
The structure of No. 1 is not particularly limited, but in order to improve the heat dissipation efficiency of the heat dissipation fin 21, for example, the heat dissipation fin 2
It is preferable that 1 has a form in which the surface area is enlarged as shown in FIG.

According to the first embodiment, since the heat pipe 20 extending from the contact region of the Peltier module 5 to the outside along the bottom wall surface is embedded inside the package bottom wall 4a, the heat generating substrate 5c The heat generated is absorbed by the heat pipe 20 and exhausted to the outside before being diffused to the bottom wall 4a, the side wall 4b, and the cooling side substrate 5b of the package 4 in a high heat density state. This allows
Most of the heat of the heat generating side substrate 5c can be efficiently discharged to the outside of the package 4, and the problem caused by the diffusion of the heat of the heat generating side substrate 5c, that is, the heat of the heat generating side substrate 5c is reduced to the cooling side substrate 5b. The temperature of the semiconductor laser element 2 cannot be kept constant due to heat transfer to the side, and the heat of the heat generation side substrate 5c diffuses into the package 4 to cause recirculation of the sealing gas inside the package 4. It is possible to prevent the problem of reducing the cooling efficiency of the Peltier module 5.

Therefore, it becomes easy to achieve high output of the semiconductor laser device 2 and realization of use in a high temperature environment.

The second embodiment will be described below. In the description of the second embodiment, the same components as those of the first embodiment will be designated by the same reference numerals, and duplicate description of the common parts will be omitted.

The semiconductor laser module 1 of the second embodiment is premised on being placed on the heat sink 15.

In this second embodiment, as shown in FIG. 2, in the bottom wall 4a of the package 4, the contact area T of the Peltier module 5 has a higher thermal conductivity than other parts of the package 4. It is made of material. As a result, the heat generated from the heat generation side substrate 5c of the Peltier module 5 remains in a high heat density state while the package bottom wall 4
It passes through the portion T having high thermal conductivity of a, is hardly diffused to other portions of the package 4, and is transferred to the heat sink 15 and discharged.

The material having a high thermal conductivity which constitutes the contact area T of the Peltier module 5 of the package bottom wall 4a is not particularly limited, but the heat generating side substrate 5c of the Peltier module 5 and other parts of the package 4 are used. It is preferable that the coefficient of thermal expansion be substantially the same as that of the constituent material of the part. For example, when the package 4 is made of Fe-Ni-Co alloy, the contact area T of the Peltier module 5 on the package bottom wall 4a is
Cu-W alloys and Al
Examples include Si. Alternatively, a carbon composite material may be used. This carbon composite material has excellent thermal conductivity and has a direction of thermal conductivity. For example, by forming the contact region T of the Peltier module 5 of the package bottom wall 4a with the carbon composite material so as to have the direction of heat conduction from the inside of the package 4 to the heat sink 15, the heat generation side substrate 5c is formed. Since the heat is quickly transferred to the heat sink 15 without being diffused to a portion other than the Peltier module contact area T, the heat exhaust efficiency of the heat of the heat generating side substrate 5c can be dramatically improved.

The third embodiment will be described below. In the description of the third embodiment, the same components as those in the first and second embodiments will be designated by the same reference numerals, and duplicate description of the common parts will be omitted.

In the third embodiment, as shown in FIG. 3, the entire bottom wall 4a of the package 4 is made of a material having a higher thermal conductivity than other parts of the package 4. As a result, similarly to the second embodiment, the heat generated from the heat generation side substrate 5c of the Peltier module 5 passes through the package bottom wall 4a and remains on the side wall 4b of the package 4 and the like with a high heat density. The heat is not diffused but is transferred to the heat sink 15 and discharged.

In the third embodiment, the material forming the package bottom wall 4a is not particularly limited, but
In order to increase the efficiency of exhausting heat of the heat generating side substrate 5c, it is preferable to use the above-mentioned carbon composite material, for example. When this carbon composite material is used, the package bottom wall 4a is formed of the carbon composite material so as to have the direction of heat conduction from the inside of the package 4 toward the heat sink 15.

By the way, in the structure of the third embodiment, since the entire package bottom wall 4a is made of a material having a high thermal conductivity, the heat generated from the heat generating side substrate 5c of the Peltier module 5 is packaged. There is a risk that heat is transferred to the entire bottom wall 4a, and the heat is radiated to the inside of the package 4 from the bottom wall surface portion exposed inside the package 4. Therefore, in this third embodiment, in order to prevent the heat radiation from the package bottom wall 4a to the inside of the package, the abutting area of the Peltier module 5 is avoided on the surface of the bottom wall 4a inside the package 4 to perform heat insulation. A member 24 is provided.

The fourth embodiment will be described below. In the description of the fourth embodiment, the same components as those of the first to third embodiments will be designated by the same reference numerals, and duplicate description of the common parts will be omitted.

The semiconductor laser module 1 of the fourth embodiment has a structure that does not need to be mounted on the heat sink 15. That is, as shown in FIG. 4, the entire package bottom wall 4a is made of a material having a higher thermal conductivity than the other parts of the package 4, and the package bottom wall 4a has a heat dissipation portion that is projected to the outside. The expanded portion 25 is formed.

In the fourth embodiment, the heat generated from the heat generating side substrate 5c of the Peltier module 5 is absorbed by the package bottom wall 4a with almost no diffusion, and the package bottom wall 4a contacts the Peltier module 5. The heat is transferred from the region to the heat dissipation expansion part 25 and is exhausted to the outside from the heat dissipation expansion part 25.

The constituent material of the package bottom wall 4a is not particularly limited, and any suitable material may be used. To enhance the heat exhaust efficiency of the heat of the heat generating side substrate 5c, for example, It is preferable to use the above-mentioned carbon composite material. When the carbon composite material is used, the package bottom wall 4a is made of the carbon composite material so that the carbon composite material has a directivity of heat conduction in the direction from the contact area of the Peltier module 5 to the heat radiation expansion portion 25.

In the fourth embodiment, the heat radiation expansion portion 2 is used.
In order to enhance the heat radiation efficiency from the heat radiation 5, the heat radiation expansion portion 25 is provided with heat radiation fins 26.

Further, in the fourth embodiment, the entire package bottom wall 4a is made of a material having a high thermal conductivity. Therefore, as in the third embodiment, the heat generating substrate 5c of the Peltier module 5 is used. Is transferred to the entire package bottom wall 4a, and the heat may be radiated to the inside of the package 4 from the bottom wall surface portion exposed inside the package 4. Therefore, in the fourth embodiment, as in the third embodiment, the heat insulating member 24 is provided on the surface of the bottom wall 4a inside the package 4 while avoiding the contact area of the Peltier module 5. .

The semiconductor laser module 1 according to the fourth embodiment has a structure in which the heat of the heat generating side substrate 5c of the Peltier module 5 can be efficiently discharged to the outside without mounting it on the heat sink 15. Of course, the semiconductor laser module 1 according to the fourth embodiment has the heat sink 1
It may be placed on the No. 5.

The fifth embodiment will be described below. In the description of the fifth embodiment, the same components as those of the first to fourth embodiments will be designated by the same reference numerals, and duplicate description of the common parts will be omitted.

As shown in FIG. 5, this fifth embodiment has substantially the same structure as that of the first embodiment, but instead of the heat pipe 20, a member 28 made of a carbon composite material is used. It is provided. This member 28
Is made of a carbon composite material so as to have a heat conduction direction in which heat of the heat generation side substrate 5c of the Peltier module 5 is guided to the outside. Also in this fifth embodiment, the member 2 pulled out of the package 4
A heat radiation fin 29 is provided at the portion 8 to improve the heat radiation efficiency.

The present invention is not limited to the first to fifth embodiments, and various embodiments can be adopted. For example, in addition to the configurations of the first, second and fifth embodiments, as shown by the dotted lines in FIG. 1, FIG. 2 and FIG. 5, on the surface of the bottom wall 4a inside the package 4, Three
The heat insulating member 24 as shown in the fourth and fifth embodiments may be formed so as to avoid the contact region of the Peltier module 5.

Further, as shown in each of the second to fourth embodiments, at least the contact area of the Peltier module 5 of the package bottom wall 4a is made of a material having a higher thermal conductivity than other parts of the package 4. The structure to be formed may be combined with the heat pipe 20 as shown in the first and fifth embodiments, or a structure in which the member 28 made of a carbon composite material instead of the heat pipe 20 is embedded inside the package bottom wall 4a.

Further, although the radiation fins 21, 26, 29 are provided in each of the first, fourth, and fifth embodiments, for example, the package in the heat pipe 20, the radiation expansion portion 25, or the member 28 is used. In the case where the heat radiation efficiency is increased by taking measures such as increasing the surface area of the portion arranged outside the heat radiating section 4, the heat radiating fins 21, 26, 29 need not be provided.

Further, in the semiconductor laser module 1 of each of the first to fifth embodiments, the light emitted from the semiconductor laser element 2 is condensed through the lenses 10 and 13 and is incident on the end face of the optical fiber 3. Although it was a configuration, for example,
The present invention can be applied to a semiconductor laser module in which a lensed fiber having a lens formed at the tip of the optical fiber 3 is used and the lenses 10 and 13 are omitted. As described above, the present invention can be applied not only to the semiconductor laser module shown in FIG. 6 but also to various semiconductor laser modules having other forms.

[0053]

According to the present invention, a heat pipe is embedded inside the bottom wall of the package and the heat generated from the heat generating side of the Peltier module is guided to the outside by the heat pipe, or the bottom wall of the package is At least the Peltier module contact area is made of a material having a higher thermal conductivity than other parts of the package, or the bottom wall of the package is made of a material having a higher thermal conductivity than other parts of the package. By arranging the expansion part for heat dissipation on the bottom wall, the heat generated from the heat generation side of the Peltier module is hardly diffused and the heat pipe and the package bottom wall part with high heat conductivity remain in a high heat density state. The heat is absorbed by and is exhausted to the outside.

As a result, the heat generated from the heat generating side of the Peltier module can be efficiently discharged to the outside, and the problem caused by the diffusion of the heat on the heat generating side of the Peltier module, that is, the heat of the heat generating side. Is transferred to the cooling side of the Peltier module, making it difficult to keep the temperature of the semiconductor laser device constant, and the heat on the heating side of the Peltier module diffuses into the package wall and becomes a gas inside the package. It is possible to prevent the problem that the cooling efficiency of the Peltier module is lowered due to the circulation.

Therefore, by providing the characteristic configuration of the present invention, it is possible to provide a semiconductor laser module capable of realizing both high output of the semiconductor laser device and use in a high temperature environment.

In a heat pipe part drawn out of the package, a member made of a carbon composite material provided in place of the heat pipe, and a heat dissipation fin provided in the heat dissipation expansion part of the package bottom wall, The heat radiation fins can enhance the efficiency of exhausting heat on the heat generation side of the Peltier module.

In the case where the heat insulating member for preventing heat radiation from the bottom wall of the package to the inside of the package is arranged on the bottom wall surface inside the package while avoiding the Peltier module contact area, the heat generated by the Peltier module is generated. The heat insulating member can almost certainly prevent the heat on the side from being radiated into the package through the package bottom wall.
As a result, the heat on the heat generation side of the Peltier module can be more reliably transferred to the outside and discharged.

In the case where a carbon composite material is used as a material having a high thermal conductivity which constitutes the bottom wall of the package, the carbon composite material has a very high thermal conductivity, and the direction of the thermal conductivity is Since it has this, the heat on the heat generation side of the Peltier module can be more efficiently exhausted to the outside.

[Brief description of drawings]

FIG. 1 is a model diagram for explaining a first embodiment example of a semiconductor laser module according to the present invention.

FIG. 2 is a model diagram showing a schematic cross-sectional view of a second embodiment of a semiconductor laser module according to the present invention.

FIG. 3 is a model diagram showing a schematic sectional view of a third embodiment of a semiconductor laser module according to the present invention.

FIG. 4 is a model diagram showing a schematic cross-sectional view of a fourth embodiment of a semiconductor laser module according to the present invention.

FIG. 5 is a model diagram showing a schematic sectional view of a fifth embodiment of a semiconductor laser module according to the present invention.

FIG. 6 is a diagram for explaining a conventional example of a semiconductor laser module.

[Explanation of symbols]

1 Semiconductor laser module 2 Semiconductor laser device 3 optical fiber 4 packages 4a bottom wall 5 Peltier module 20 heat pipe 21,26,29 Radiating fin 24 Thermal insulation member 25 Heat dissipation extension

   ─────────────────────────────────────────────────── ─── Continued front page    (72) Inventor Yuji Tashiro             1-5-28 Fukami Nishi, Yamato City, Kanagawa Prefecture Oka             Noden Cable Co., Ltd. F term (reference) 2H037 AA01 BA03 DA03 DA36 DA38                 5F073 AB27 AB28 AB30 FA25 FA30

Claims (10)

[Claims] 1. A semiconductor laser module in which a semiconductor laser device is arranged inside a package in an optical coupling state with an optical fiber, has a Peltier module for controlling the temperature of the semiconductor laser device, and the Peltier module has a cooling side. Of the Peltier module inside the package with the heat generating side in contact with the bottom wall of the package. A heat pipe extending from the contact area to the outside along the bottom wall surface is buried, and heat generated from the heat generating side of the Peltier module is exhausted to the outside through the heat pipe. Laser module. 2. The semiconductor laser module according to claim 1, wherein a heat radiation fin is attached to the heat pipe drawn out of the package. 3. A semiconductor laser module in which a semiconductor laser device is arranged inside a package in a state of being optically coupled to an optical fiber, has a Peltier module for controlling the temperature of the semiconductor laser device, and the Peltier module has a cooling side. Are arranged inside the package in a posture in which the heat generation side is in contact with the bottom wall of the package, and the bottom wall of the package is at least the Peltier module. A semiconductor laser module, wherein the contact area is made of a material having a higher thermal conductivity than other parts of the package. 4. The material having a high thermal conductivity forming at least the contact region of the Peltier module on the bottom wall of the package is a carbon composite material having a direction of heat conduction from the inside of the package to the bottom surface. The semiconductor laser module according to claim 3, wherein 5. A semiconductor laser module in which a semiconductor laser device is arranged inside a package in an optical coupling state with an optical fiber, has a Peltier module for controlling the temperature of the semiconductor laser device, and the Peltier module has a cooling side. Is directed to the semiconductor laser device side, and the heat generation side is in contact with the bottom wall of the package, and the bottom wall of the package is the other part of the package. It is made of a material with a higher thermal conductivity than that of the Peltier module, and the bottom wall of this package has a heat dissipation expansion part that projects to the outside. A semiconductor laser module having a structure in which heat is transferred from a contact portion to a heat dissipation extension portion and is exhausted to the outside. 6. The semiconductor laser module according to claim 5, wherein a heat radiation fin is attached to the heat radiation expansion portion of the bottom wall of the package. 7. The material forming the bottom wall of the package is a carbon composite material having directivity of heat conduction in the direction from the Peltier module contact area of the package to the heat radiation expansion portion. 5 or claim 6
The described semiconductor laser module. 8. The heat insulating member for preventing heat radiation from the bottom wall of the package to the inside of the package is disposed on the bottom wall surface inside the package while avoiding the Peltier module contact area. The semiconductor laser module according to claim 7. 9. The heat pipe extending from the contact region of the Peltier module to the outside along the bottom wall surface is embedded inside the bottom wall of the package. The semiconductor laser module described in 1. 10. A member made of a carbon composite material having directivity of heat conduction in a direction of guiding the heat generated from the heat generation side of the Peltier module to the outside is embedded in the bottom wall of the package instead of the heat pipe. The semiconductor laser module according to claim 1, 2 or 9, wherein: