JP2003179281A - Thin-film piezoelectric element and its manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a thin-film piezoelectric element which has a small leak current between electrode metal films and its manufacturing method. <P>SOLUTION: The thin-film piezoelectric element has a thin-film piezoelectric body having 1st and 2nd surfaces facing each other and at least one unit laminated body composed of a 1st electrode metal film on its 1st surface and a 2nd electrode metal film on its 2nd surface, and is provided with an electrode separation surface formed of a thin-film piezoelectric body surface parallel to the 1st surface between the 1st and 2nd electrode metal films. <P>COPYRIGHT: (C)2003,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a piezoelectric element and a method for manufacturing the same, and more particularly to a thin film piezoelectric element used for an actuator for performing precise position control at a submicron level and a method for manufacturing the same.

[0002]

2. Description of the Related Art FIG. 23 (c) is a sectional view of a general thin film piezoelectric element 90. In the thin film piezoelectric element 90, both main surfaces of the thin film piezoelectric body 92 are electrode metal films 94 and 96, respectively.
It is covered and formed by. Electrode metal films 94 and 9
When a voltage is applied between 6 and 6, the thin-film piezoelectric material 92 expands and contracts in the in-plane direction. The thin film piezoelectric element 90 can be used as an actuator that performs position control by using such fluctuations caused by expansion and contraction.

Next, a general method of manufacturing the thin film piezoelectric element 90 will be described. First, as shown in FIG. 23A, the thin film piezoelectric substance 92 and the electrode metal film 9 are formed on the electrode metal film 96.
4 are laminated in this order. Next, as shown in FIG. 23B, a mask 98 is formed on the electrode metal film 94 and dry etching is performed. As a result, the electrode metal film 9 in the region not covered with the mask (indicated by the arrow in FIG. 23B) is formed.
4 and 96 and the thin-film piezoelectric material 92 are removed by etching, and the thin-film piezoelectric material element 90 having a desired shape shown in FIG.

[0004]

When the thin film piezoelectric element 90 is manufactured by dry etching, as shown in FIG.
As shown in, a thin film side wall deposit 88 is formed on the side surface of the thin film piezoelectric element 90. The components of the side wall deposits 88 include components of the thin-film piezoelectric material and chemicals of the etching gas, as well as components of the electrode metal film.

Further, as the etching depth increases,
A large amount of the above-mentioned etching products in the dry etching process is generated, and more sidewall deposits 88 are formed on the side surfaces of the thin film piezoelectric element 90. Therefore, even if the thin film piezoelectric element 92 has a large thickness, or even if the single layer thin film piezoelectric element 92 has a small thickness, the thin film piezoelectric element 90 has a multilayer thin film piezoelectric element 9
In the case of two, the etching depth needs to be made larger, so that the amount of the side wall deposits 88 formed on the side surface of the thin film piezoelectric element 90 increases.

Since the sidewall deposit 88 contains a conductive substance, the sidewall deposit 88 is attached to the side surface of the thin film piezoelectric element 90.
If adhered, the insulating property between the electrode metal films 94 and 96 deteriorates, the electrode metal films 94 and 96 are short-circuited, the electric field is not applied to the thin film piezoelectric body 92, and the thin film piezoelectric element 9
0 stops working. As a result, the yield of products in the manufacturing process could not be sufficiently improved. Further, although the multilayer structure of the thin-film piezoelectric material is indispensable depending on the purpose of use in order to increase the displacement amount of the actuator, it is possible to provide a piezoelectric material element having a multilayered piezoelectric material element with high reliability and However, it was difficult to manufacture with good yield.

The present invention has been made to solve the above problems, and provides a thin film piezoelectric element which can prevent deterioration of insulation between electrode metal films and has a small leak current, and a manufacturing method thereof. The purpose is to

[0008]

A thin film piezoelectric element of the present invention is a thin film piezoelectric body having a first surface and a second surface facing each other, and a first electrode metal film on the first surface. And a second electrode metal film on the second surface, and at least one unit laminate body comprising:
Between the first electrode metal film and the second electrode metal film,
Is provided with an electrode separation surface which is parallel to the surface of the thin film piezoelectric body. Since the first thin film piezoelectric element according to the present invention configured as described above has the electrode separation surface parallel to the first surface, that is, perpendicular to the etching direction in the manufacturing process, In the dry etching step of the manufacturing process, conductive side wall deposits attached to the walls parallel to the etching direction are electrically separated by the electrode separation surface. Accordingly, it is possible to prevent the first electrode metal film and the second electrode metal film from being short-circuited via the deposit on the side wall, and to insulate the first electrode metal film and the second electrode metal film from each other. Can be improved. Therefore, according to the first thin film piezoelectric element of the present invention, the leak current can be extremely reduced and the reliability can be improved. Here, the width of the electrode separation surface may be at least larger than the thickness of the side wall adhered matter that adheres to the side wall in the dry etching step, but preferably, the positional accuracy (alignment accuracy) when forming the mask used in the dry etching step. ) Is taken into consideration, the thickness is set to be equal to or more than the value obtained by adding the positional tolerance when the mask is formed to the thickness of the deposit on the sidewall.

Here, in the first thin film piezoelectric element,
The electrode separation surface is assumed to be parallel to the first surface, but the term “parallel” as used in this specification does not mean strict geometrical parallelism, and side wall deposits do not adhere in the dry etching process. Say a face. Further, the "dry etching" in the present specification performs etching by applying a high frequency voltage to an etching gas composed of a rare gas such as Ar and a reactive gas containing atoms such as O, F and Cl to discharge the etching gas. Reactive ion etching (RIE),
This includes ion beam etching or the like in which the ions of the etching gas are made into a beam shape and irradiated on the sample to perform etching.

In the first thin film piezoelectric element according to the present invention, the electrode separation surface may be provided on a side surface of the thin film piezoelectric body, or the electrode separation surface may be formed on the second electrode metal film. You may comprise by the outer peripheral part of the said 2nd surface located in the outer side. However, the thin film piezoelectric material located below this electrode separation surface may not only contribute to the expansion and contraction of the piezoelectric element, but may also interfere with the expansion and contraction operation of the thin film piezoelectric material. It is preferable that the thickness of the thin-film piezoelectric material located at is thin. Therefore, by providing the electrode separation surface on the side surface of the thin film piezoelectric body, the thickness of the thin film piezoelectric body located under the electrode separation surface can be reduced, so that the electrode separation surface is the side surface of the thin film piezoelectric body. Is preferably provided in the.

Further, the width of the electrode separation surface of the thin film piezoelectric material is 0.1 μm or more in order to more reliably insulate the first electrode metal film and the second electrode metal film from each other. In order to more reliably insulate the first electrode metal film and the second electrode metal film from each other, the thickness is more preferably 1 μm or more. Further, considering the processing accuracy in the manufacturing process, the set value of the width of the electrode separation surface is preferably 3 μm or more, more preferably about 5 μm. Further, since the peripheral region of the thin-film piezoelectric material (the region immediately below the electrode separation surface) is a portion that does not function as a piezoelectric material, it is not preferable to unnecessarily widen the width of the electrode separation surface. From this point of view, the upper limit of the width of the peripheral region of the thin film piezoelectric body is 10% of the square root of S, where S is the area of both sides of the thin film piezoelectric body that is in contact with the electrode metal film.
The following is preferable. If the width of the electrode separation surface exceeds 10% in the entire area of the electrode separation surface, the area of the portion of the thin film piezoelectric body that actually operates decreases to nearly half, and the performance as an actuator deteriorates. Is.

Further, the present invention is particularly effective for a thin film piezoelectric element in which two thin film piezoelectric elements are laminated. That is, the second thin-film piezoelectric material element according to the present invention includes a first thin-film piezoelectric material having a first surface and a second surface facing each other, and a first electrode metal film on the first surface. A first unit laminated body including a second electrode metal film on the second surface, a second thin film piezoelectric body having a third surface and a fourth surface facing each other, and the third surface A second unit laminate composed of an upper third electrode metal film and a fourth electrode metal film on the fourth surface, wherein the first unit laminate and the second unit laminate are provided. A thin film piezoelectric element comprising a body and a second electrode metal film and a third electrode metal film which are opposed to each other and bonded to each other, wherein the first electrode metal film and the second electrode metal film are provided. Between the first electrode surface and the third electrode metal film and the fourth electrode, the first electrode separation surface being parallel to the first surface and formed of the surface of the first thin-film piezoelectric material. During the genus film, and having a second electrode separation surface consisting of parallel said second thin film piezoelectric element surface to the third surface.

According to this second thin film piezoelectric element, the first
Since the side wall deposits attached to the side surface of the thin film piezoelectric body can be electrically separated by the electrode separation surface, and the side wall deposits attached to the side surface of the second thin film piezoelectric body can be electrically separated by the electrode separation surface. The insulating property between the metal films can also be improved. As a result, the leak current between the first electrode metal film and the second electrode metal film and the leak current between the third electrode metal film and the fourth electrode metal film can be reduced, and a thin film piezoelectric body having a multilayer structure can be obtained. The reliability of the device can be improved.

Also in such a multi-layered thin film piezoelectric element, for the same reason as above, the first thin film piezoelectric element in the peripheral region is formed.
It is preferable that the second thin-film piezoelectric material has a small thickness. Also,
The width of the electrode separation surface is preferably 0.1 μm or more.

Further, in the second thin film piezoelectric element according to the present invention, the second electrode metal film and the third electrode metal film may be joined together via an insulating adhesive layer. ,
In that case, for example, the second electrode metal film and the third electrode metal film can be connected to each other through a through hole formed in the adhesive layer.

In this case, the through hole is the third hole.
Is formed in the recess provided by removing the fourth electrode metal film and the second thin film piezoelectric body so as to reach the electrode metal film of the second thin film piezoelectric body. It is preferable that the side surface has an electrode separation surface parallel to the third surface. As a result, it is possible to electrically separate the side wall deposits attached to the inner peripheral side surface of the second thin film piezoelectric body.

Also, in the second thin film piezoelectric element according to the present invention, the fourth electrode metal film and the second thin film piezoelectric material are formed so that the through hole reaches the third electrode metal film. It can also be formed in the notch provided by removing, and in that case, the side surface of the second thin film piezoelectric body in the notch has an electrode separation surface parallel to the third surface. Is preferred. As a result, it is possible to electrically separate the side wall deposits attached to the side surfaces of the second thin film piezoelectric body in the cutout portions.

An actuator according to the present invention is an actuator including a pair of piezoelectric elements that expand and contract in directions parallel to each other, and the piezoelectric elements respectively have a first surface and a second surface facing each other. And a first unit laminated body including a first thin film piezoelectric body having the above, a first electrode metal film on the first surface and a second electrode metal film on the second surface are opposed to each other. A second thin-film piezoelectric body having a third surface and a fourth surface, a third electrode metal film on the third surface, and a fourth electrode metal film on the fourth surface. A second unit laminated body, wherein the first unit laminated body and the second unit laminated body are joined by making the second electrode metal film and the third electrode metal film face each other. The first electrode parallel to the first surface, the first electrode metal film being between the first electrode metal film and the second electrode metal film. The second thin-film piezoelectric element having a first electrode separation surface formed of the surface of the thin-film piezoelectric material and parallel to the third surface between the third electrode metal film and the fourth electrode metal film. It is characterized by having a second electrode separation surface composed of a body surface. The actuator according to the present invention configured as described above can reduce leakage current and increase reliability.

Further, in the actuator according to the present invention, in each of the piezoelectric body elements, the second electrode metal film and the third electrode metal film are joined via an insulating adhesive layer,
The second electrode metal film and the third electrode metal film may be connected to each other through a through hole formed in the adhesive layer.

Further, in the actuator according to the present invention, the through hole is provided by removing the fourth electrode metal film and the second thin film piezoelectric material so as to reach the third electrode metal film. Can be formed in the concave portion, in which case the concave portion is formed on the inner peripheral side surface of the second thin film piezoelectric body to electrically separate side wall deposits attached to the inner peripheral side surface. It is preferable to have an electrode separation surface parallel to the third surface.

Further, in the actuator according to the present invention, the through hole is provided by removing the fourth electrode metal film and the second thin film piezoelectric material so as to reach the third electrode metal film. May be formed in the cutout portion, in which case the second portion in the cutout portion is formed.
It is preferable that the side surface of the thin-film piezoelectric material has an electrode separation surface parallel to the third surface in order to electrically separate the side wall adhered matter adhered to the side surface.

Furthermore, in the actuator according to the present invention, the second electrode metal film and the third electrode metal film formed in the through hole of one piezoelectric element of the pair of piezoelectric elements. And the second electrode formed in the through hole of the other piezoelectric element.
The electrode metal film and the electrode metal film connecting the third electrode metal film may be connected to each other. This way,
It becomes possible to control the pair of piezoelectric elements in synchronization.

The first thin film piezoelectric element according to the present invention
The manufacturing method of, in a manufacturing method for manufacturing a thin film piezoelectric element, by processing a laminate formed by laminating a lower electrode metal film, a thin film piezoelectric body and an upper electrode metal film into a predetermined shape by dry etching, A first etching step of forming a first mask having a predetermined shape on the upper electrode metal film and performing dry etching until the thin film piezoelectric surface is exposed outside the first mask; and the first mask. After removing the second mask, a second mask is formed so as to extend and cover a part of the thin film piezoelectric material around the upper electrode metal film processed into the above-described predetermined shape. And a second etching step of removing the thin-film piezoelectric material and the lower electrode metal film located outside the second mask by dry etching. In the first manufacturing method according to the present invention configured as described above, the second mask is formed so as to cover the upper electrode metal film and a part of the thin film piezoelectric material around the upper electrode metal film. Is formed so as to cover the sidewall deposits attached to the sidewalls of the thin-film piezoelectric material in the first etching step.
Side wall deposits attached to the side walls in the etching process are electrically separated. Therefore, according to the first manufacturing method, it is possible to prevent a short circuit between the first electrode metal film and the second electrode metal film, and to prevent a short circuit between the first electrode metal film and the second electrode metal film. Since the insulating property can be improved, the thin film piezoelectric element can be manufactured with good yield.

The first thin film piezoelectric element according to the present invention
In the manufacturing method described above, in the first etching step, it is preferable that the thin-film piezoelectric material is removed by etching halfway in the thickness direction.

According to the manufacturing method of the present invention, a remarkable leak current reducing effect can be obtained when manufacturing an element having a plurality of piezoelectric thin films. That is, the second method for manufacturing a thin-film piezoelectric element according to the present invention includes two unit laminated bodies each including a first electrode metal film, a thin-film piezoelectric body, and a second electrode metal film laminated in one unit. The second electrode metal film of the laminated body and the first electrode metal film of the other unit laminated body are bonded to each other through the adhesive layer so as to face each other, and the laminated body is processed into a predetermined shape by dry etching to obtain a thin film. In a manufacturing method for manufacturing a piezoelectric element, a lower etching step of processing the first electrode metal film into a predetermined shape when processing each unit laminate is performed by forming the second electrode metal film into a predetermined shape. A mask for forming the first electrode metal film covers the second electrode metal film and a part of the thin film piezoelectric material exposed around the second electrode metal film in the lower etching process. Shaped like And, and removing the thin-film piezoelectric and first electrode metal film positioned outside of the mask. According to this second manufacturing method, since the thin film piezoelectric body having a plurality of piezoelectric thin films has a large total thickness (total thickness), more sidewall deposits are attached in the etching step. Even if there is a risk, the side wall deposits can be reliably electrically separated between the first electrode metal film and the second electrode metal film. Thereby, a short circuit between the first electrode metal film and the second electrode metal film can be prevented, and the insulation between the first electrode metal film and the second electrode metal film can be increased, so that the yield is good and the thin film piezoelectric element Can be manufactured.

In this second manufacturing method, the lower etching step for processing the first electrode metal film of the other unit laminated body and the upper etching step for processing the second electrode metal film of the one unit laminated body are performed. The continuous etching process using the same mask may be used.

In the first and second manufacturing methods according to the present invention, the thin film piezoelectric material is formed by a sputtering method such as magnetron sputtering, a CVD method, a sol-gel method, or a method such as evaporation of the thin film piezoelectric material by heating. Can be done.

[0028]

BEST MODE FOR CARRYING OUT THE INVENTION (Embodiment 1) FIG.
It is a sectional view showing one embodiment of a thin film piezoelectric element concerning the present invention. The thin film piezoelectric element 2 according to the present embodiment includes a first electrode metal film 6, a thin film piezoelectric body 4 formed on the first electrode metal film 6, and a thin film piezoelectric body 4 formed on the thin film piezoelectric body 4. The outer edge portion (shape) is formed by dry-etching the laminated body including the second electrode metal film 8. Such a thin film piezoelectric element 2 includes a first electrode metal film 6 and a second electrode metal film 6.
When a voltage is applied between the thin film piezoelectric body 4 and the electrode metal film 8, the thin film piezoelectric body 4 expands and contracts in the in-plane direction, and this movement is used for an actuator or the like.

In the thin film piezoelectric element 2, the thin film piezoelectric element 4
Has a lower surface 4a and an upper surface 4d facing the lower surface 4a. The first electrode metal film 6 is formed on the entire lower surface 4a of the thin film piezoelectric body 4, but the area of the second electrode metal film 8 on the upper surface 4d is smaller than that of the first electrode metal film 6. The second electrode metal film 8 is formed in the central region 4b of the upper surface 4d, but the second electrode metal film 8 is not formed in the peripheral region 4c surrounding the central region 4b. The thin-film piezoelectric material 4 is exposed. Further, in the thin-film piezoelectric material 4, a step is provided in the peripheral region 4c so that the thickness h1 in the peripheral region 4c is smaller than the thickness h2 in the central region 4b.

Thus, according to the thin film piezoelectric element 2,
The outer peripheral edge of the second electrode metal film 8 is inside the outer peripheral edge of the thin film piezoelectric body 4, and the thin film piezoelectric body is provided between the outer peripheral edge of the second electrode metal film 8 and the outer peripheral edge of the thin film piezoelectric body 4. A peripheral region 4c having an exposed surface of 4 is provided.

When a dry etching process is used to form the outer edge of the thin film piezoelectric element 2, thin film side wall deposits 12 are formed on the side surfaces of the thin film piezoelectric element 2. The sidewall deposit 12 is an etching product generated in a dry etching process, and is composed of a material of the electrode metal film removed by etching, a chemical substance of etching gas, or a compound of the etching gas and the electrode metal film. Contains conductive material.

According to the above-described thin film piezoelectric element 2 of the present embodiment, in the dry etching process, the side surface 7 of the first electrode metal film 6, the side surface 9 of the thin film piezoelectric body 4, and the second side
Although the side wall deposit 12 adheres to the side surface 11 of the electrode metal film 8 of FIG. 1, the side wall deposit 12 does not adhere to the peripheral region 4c. This is because the peripheral region 4c of the thin film piezoelectric body 4 is a surface substantially perpendicular to the direction of progress of dry etching, which will be described in detail later when the method of manufacturing the thin film piezoelectric body element 2 is described.

As described above, since the side wall deposits 12 of the thin film piezoelectric element are separated by the peripheral region 4c, the first electrode metal film 6 and the second electrode metal film 8 contain a conductive substance. It is not short-circuited via the side wall deposit 12. As a result, the insulation between the first electrode metal film 6 and the second electrode metal film 8 can be improved, and the reliability of the thin film piezoelectric element can be improved.

Next, a method of manufacturing the above-described thin film piezoelectric element 2 will be described with reference to FIGS.

First, as shown in FIG. 2A, the thin film piezoelectric material 4 and the second electrode metal film 8 are laminated in this order on the first electrode metal film 6. Various methods other than the powder sintering method can be used as the method for forming the thin film piezoelectric body 4. For example, a method such as a sputtering method, CVD, laser ablation, a sol-gel method, or evaporation of a thin film piezoelectric material by heating is used. The powder sintering method is excluded when the powder sintering method is used, after mechanically cutting the green sheet of the piezoelectric powder raw material or after sintering the powder. Since a method of forming the outer edge portion of the thin film piezoelectric element by mechanical cutting is possible, less expensive dry etching is used.

Next, as shown in FIG. 2B, a first etching mask 14 having a desired shape is formed on the second electrode metal film 8. The first etching mask 14 can be formed by photolithography using a resist, for example. The second electrode metal film 8 in the region not covered by the first etching mask 14 (arrow in FIG. 2B) is removed by etching by dry etching using an etching gas. A part of the thin film piezoelectric body 4 is removed by etching until the thickness becomes h1 (first etching step). After the etching is completed, the first etching mask 14 is removed.

By the first dry etching step, as shown in FIG. 2C, the upper surface 4d of the thin film piezoelectric body 4 is
A central region 4b covered with the second electrode metal film 8 and a peripheral region 4c surrounding the central region 4b and exposing the thin film piezoelectric body 4 are formed. Further, a step is provided in the peripheral region 4c so that the thickness h1 of the thin film piezoelectric body 4 in the peripheral region 4c becomes
It is smaller than the thickness h2 of the thin film piezoelectric body 4 in the central region 4b.

In the above-described first dry etching step, etching products such as the electrode metal film removed by etching, the etching gas chemically polymerized, or the compound of the etching gas and the electrode metal film are generated.
These adhere to the side surface 11 of the second electrode metal film 8 and the side surface 9 of the thin film piezoelectric body 4 to form a thin film side wall deposit 12. The peripheral region 4c of the thin film piezoelectric body 4 is a surface that is substantially perpendicular to the etching progress direction, and is a surface on which the ion particles generated from the etching gas collide.
The sidewall deposit 12 is not formed.

After the first dry etching process described above is completed, a dry etching process is further performed. First, FIG.
As shown in (d), the second etching mask 18 is formed on the second electrode metal film 8 which is covered with the mask and is not removed by etching. The second etching mask 18 used here has a larger area than the first etching mask 14 used in FIG. 2B, and the second etching mask 18 allows the second electrode metal film 8 and
A part of the peripheral region 4c of the thin film piezoelectric body 4 is covered.

Next, dry etching is performed in the same manner as in the first dry etching step described above, and in the region not covered with the second etching mask 18 (arrow in FIG. 2D), the thin film piezoelectric material having a thickness h1. 4 and the first electrode metal film 6
And are removed by etching (second dry etching step). After the completion of the second dry etching, the second etching mask 18 is removed to complete the thin film piezoelectric element 2 shown in FIG.

In the second dry etching step as well, etching products are generated in the same manner as in the first dry etching step, and as shown in FIG. 1A, the newly formed thin film piezoelectric material 4 is formed. Side surface 9 and first electrode metal film 6
Side wall deposits 12 are formed on the side surfaces 7 of the.

When the thin film piezoelectric element is manufactured by the method as described above, the peripheral region 4c where the side wall deposits are not formed is formed on the upper surface 4d of the thin film piezoelectric element 4 at the outer edge portion of the thin film piezoelectric element 2. it can. Therefore, the side wall deposit 12 formed on the side surface 7 of the first electrode metal film 6 and the side surface 9 of the thin film piezoelectric body 4 continuous with the side surface 11, the side surface 11 of the second electrode metal film 8 and the thin film continuous with the side surface 11 Since the side wall deposit 12 formed on the side surface 9 of the piezoelectric body 4 is separated by the peripheral region 4c, the first electrode metal film 6 and the second electrode metal film 8 are separated by the side wall deposit 12. Therefore, the insulation between the first electrode metal film 6 and the second electrode metal film 8 can be improved without being short-circuited. This allows
The reliability of the thin film piezoelectric element can be improved, and the product yield in the manufacturing process can be improved.

Although the substrate supporting the thin film piezoelectric element is not shown in FIGS. 1 and 2, the thin film piezoelectric element may be supported on any substrate if necessary.

The thin film piezoelectric element of this embodiment is shown in FIG.
As in the thin film piezoelectric element 2A of (b), the peripheral region 4c and the upper surface 4d are continuous so as to be located on one plane, in other words, between the peripheral region 4c and the upper surface 4a of the thin film piezoelectric member 4. It may be manufactured so as to expose the peripheral region 4c of the thin film piezoelectric body 4 without providing a step. Even with the thin film piezoelectric element 2A, as in the thin film piezoelectric element 2 of FIG. 1A, the peripheral region 4c in which the sidewall adhering substance 12 is not formed is formed.
Since the side wall deposit 12 of the thin film piezoelectric element is separated by the side wall deposit 12, the first electrode metal film 6 and the second electrode metal film 8 are not short-circuited, and the first electrode metal The insulation between the film 6 and the second electrode metal film 8 can be improved.

When manufacturing the thin film piezoelectric element 2A of FIG. 1B, the etching depth is set to the film thickness of the second electrode metal film 8 in the first etching step of FIG. 2B. The etching conditions may be set so that the thin film piezoelectric body 4 is not removed by etching. However, the region of the thin film piezoelectric body 4 that functions as a piezoelectric element is a region in which both surfaces of the thin film piezoelectric body 4 are covered with the electrode metal film, and the peripheral region 4c that is not covered with the electrode metal film serves as the piezoelectric device. It doesn't work. When the thickness of the peripheral region 4c that does not function as a piezoelectric element is large as described above, the expansion and contraction movement of the thin film piezoelectric body 4 may be hindered. Therefore, the thickness of the peripheral region 4c is preferably as thin as the thin film piezoelectric element 2 of FIG.

Further, the width W of the peripheral region 4c of the thin film piezoelectric material 4 is
Is preferably 0.1 μm or more in both the thin film piezoelectric element 2 of FIG. 1 (a) and the thin film piezoelectric element 2A of FIG. 1 (b). The metal film 6 and the second electrode metal film 8 can be insulated from each other. As described above, the peripheral region 4c is
Since it is a surface having a function of electrically separating the electrodes, it is also referred to as an electrode separation surface in the present specification, and is particularly referred to as a step portion when there is a step between the electrode and the upper surface of the thin film dielectric.

(Second Embodiment) The thin film piezoelectric element of the second embodiment is formed by laminating two thin film piezoelectric elements, which are, for example, a first thin film piezoelectric element and a second thin film piezoelectric element. As a result, it can be used as an actuator that can obtain a larger displacement amount as compared with the single-layer thin film piezoelectric element 2 as in the first embodiment. 3 and 4 are views showing the thin film piezoelectric element 30 of the second embodiment, FIG. 3 shows a plan view of the thin film piezoelectric element 30, and FIG. 4 shows 4A- of the thin film piezoelectric element 30 of FIG. FIG. 4B is a cross-sectional view taken along line 4A ′. In addition, in FIG. 3, since the area is extremely small, the side wall adhered matter 12 is omitted.

As will be described in detail later in the description of the manufacturing method, according to the thin film piezoelectric element 30, the first thin film piezoelectric element 32 is formed on the substrate 70 and the first unit laminated body. By dry-etching the laminated body formed on the first laminated body and including the second unit laminated body which constitutes the second thin film piezoelectric element 34,
An outer edge portion (shape) of the thin film piezoelectric element 30 and the through hole 36 are formed.

The thin film piezoelectric element 30 obtained by dry etching has a second thin film piezoelectric element 32 formed on the first thin film piezoelectric element 32 formed on the main surface of the substrate 70, as shown in FIG. The body element 34 is adhered and laminated by the adhesive layer 50, and the first thin film piezoelectric element 32 and the second thin film piezoelectric element 34 have the structure shown in FIG. 5, although not shown. The through holes 36 can be used for electrical connection. This will be described in detail later.

The first layer constituting the lower layer of the thin film piezoelectric element 30
The thin film piezoelectric element 32 is formed of a first thin film piezoelectric body 38, a first electrode metal film 40 formed on the lower surface 38 a of the thin film piezoelectric body 38, and an upper surface of the thin film piezoelectric body 38. The second electrode metal film 42 smaller than the area of the electrode metal film 40
Consists of. The upper surface of the first thin film piezoelectric body 38 includes a central region 38b covered with the second electrode metal film 42 and a peripheral region 38c surrounding the central region 38b and exposing the first thin film piezoelectric body 38. Become. Further, in the first thin film piezoelectric body 38, the thickness in the peripheral region 38c is
8b so that it is smaller than the thickness in 8b.
A step is provided at 8c. Further, the first electrode metal film 40 is partially extracted as shown in FIG. 3 for ease of wiring, and a partial surface 60 is exposed on the substrate 70.

The second thin film piezoelectric element 3 laminated on the first thin film piezoelectric element 32 via the adhesive layer 50.
Reference numeral 4 denotes a second thin film piezoelectric body 44, a third electrode metal film 46 formed on the lower surface 44 a of the thin film piezoelectric body 44, and an upper surface of the thin film piezoelectric body 44. The fourth electrode metal film 48 is smaller than the area. The second thin-film piezoelectric body 44 has an opening 44f that is a part of the through hole 36, and the upper surface of the second thin-film piezoelectric body 44 is a central region covered by the fourth electrode metal film 48. Four
4b and the outer peripheral portion of the central region 44b, and surrounds the peripheral region 44c where the second thin film piezoelectric body 44 is exposed and the opening 44f inside the central region 44b, and the second thin film piezoelectric body. 44 and an opening surrounding area 44e exposed. In addition, the second thin film piezoelectric body 44 has an opening surrounding area 44e and a surrounding area 44c such that the thicknesses of the opening surrounding area 44e and the surrounding area 44c are smaller than the thickness of the central area 44b. In addition, a step is provided.

FIG. 5 is a diagram schematically showing an example of a voltage application method for the thin film piezoelectric element 30. As shown in FIG. 5, according to the thin film piezoelectric element 30, the first electrode metal film 40 and the fourth electrode metal film 48 are short-circuited to form the first common electrode, and the second electrode metal film 42 is formed. The third electrode metal film 46 is short-circuited to form the second common electrode. By applying a voltage between the first common electrode and the second common electrode thus formed, the first thin film piezoelectric body 38 and the second thin film piezoelectric body 44 are expanded and contracted in the plane. It is possible,
The piezoelectric element 30 can act as an actuator. As for the actual wiring, desired electrical connection can be made by patterning an insulating film and a metal film on the upper surface of the piezoelectric element shown in FIGS. 3 and 4.
It is also possible to connect using wire leads.

According to the thin film piezoelectric element 30, as shown in FIGS. 3 and 4, the through hole 36 is formed from the fourth electrode metal film 48 to the second electrode metal film 42. Electrode metal film 46 and second electrode metal film 42 of
The upper surfaces of the through holes 36 are exposed inside. The entire surface of the fourth electrode metal film 48 is exposed on the upper surface of the thin film piezoelectric element 30, and the first electrode metal film 4 is formed.
As for 0, the surface 60 is partially exposed as described above. Therefore, it is possible to apply a necessary wiring to the exposed portion of each electrode metal film and apply a voltage to each electrode metal film.

The thin film piezoelectric element 30 of this embodiment described above.
According to the above, in the dry etching process, the side wall deposits 12 are formed on the side surface 52 of the first electrode metal film 40, the side surface 53 of the first thin film piezoelectric body 38, and the side surface 54 of the second electrode metal film 42. However, the side wall deposits 12 are not attached to the peripheral region 38c. Therefore, since the sidewall deposit 12 is separated by the peripheral region 38c, the first electrode metal film 40 and the second electrode metal film 42 are separated from each other by the sidewall deposit 12.
Will not be short circuited through.

Further, the side surface 56 of the third electrode metal film 46.
Then, the side wall deposit 12 adheres to the side surface 57 of the second thin film piezoelectric body 44 and the side surface 58 of the fourth electrode metal film 48, but the side wall deposit 12 does not adhere to the peripheral region 44c.
Further, in the through hole 36, the side surface 62 of the third electrode metal film 46 and the side surface 63 of the second thin film piezoelectric body 44.
And the side wall deposit 12 adheres to the side surface 64 of the fourth electrode metal film 48, but the side wall deposit 12 does not adhere to the opening surrounding region 44e. Therefore, the side wall deposits 12
Are separated by the peripheral region 44c and the opening peripheral region 44e, the third electrode metal film 46 and the fourth electrode metal film 48 are not short-circuited via the sidewall deposit 12.

Further, the second electrode metal film 42 and the third electrode metal film 46 are short-circuited via the side wall deposits 12 formed on the side walls 55 and 61 of the adhesive layer 50, as shown in FIG.
As described above with reference to, since the second electrode metal film 42 and the third electrode metal film 46 have the same potential, the side wall deposit 12 causes the second electrode metal film 42 and the third electrode metal film 42 to have the same potential. Even if the film 46 is short-circuited, the piezoelectric element is not affected.

As described above, according to the thin film piezoelectric element 30 of this embodiment, the insulating property between the first electrode metal film 40 and the second electrode metal film 42 can be improved, and , The third electrode metal film 46 and the fourth electrode metal film 4
It is possible to improve the insulation between the thin film piezoelectric element and the thin film piezoelectric element.

Next, a method of manufacturing the piezoelectric element 30 of this embodiment will be described with reference to FIGS. 6 to 21
4A-4A ′ of the piezoelectric element 30 shown in FIG.
A sectional view corresponding to a line is shown.

First, the first electrode metal film 40, the first thin film piezoelectric body 38, and the second electrode metal film 42 are laminated on the substrate 70 in this order from the side closer to the substrate 70. Further, on the other substrate 72, the fourth electrode metal film 48, the second thin film piezoelectric body 44, and the third electrode metal film 46 are laminated in this order from the side closer to the substrate 72. Next, as shown in FIG. 6, the above-mentioned two laminated bodies are made to face each other by the second electrode metal film 42 and the third electrode metal film 46, and are adhered by the adhesive layer 50. Note that the second electrode metal film 42 and the third electrode metal film 46 may be bonded by thermal welding using ultrasonic vibration without using an adhesive agent. If a conductive adhesive is used as the adhesive, the second electrode metal film 42 and the third electrode metal film 46 can be formed without providing the through hole 36 (see FIGS. 3 and 4) described above. It can be electrically connected.

Next, as shown in FIG. 7, the substrate 72 is removed by, for example, wet etching, and a first etching mask 74 is formed on the fourth electrode metal film 48 as shown in FIG. The first etching mask 74 can be formed by photolithography using a resist, for example. Note that a second etching mask 76, a third etching mask 78, a fourth etching mask 80, and a fifth etching mask 82 which will be described later are provided.
Can be formed in the same manner.

Next, as shown in FIG. 9, the fourth electrode metal film 48 in the region not covered with the mask 74 is removed by etching by dry etching, and the thickness of the second thin film piezoelectric body 44 is further increased. Until the h3 becomes h3, a part of the second thin film piezoelectric body 44 is removed by etching (first dry etching step). As a result, the central region 44b covered with the second electrode metal film 48 is formed on the upper surface of the second thin film piezoelectric body 44.
And surrounds the central region 44b, and the second thin film piezoelectric body 4
A peripheral region 44c in which 4 is exposed is formed. Further, a step is provided in the peripheral region 44c so that the thickness h3 of the second thin film piezoelectric body 44 in the peripheral region 44c is the central region 44b.
Is smaller than the thickness h4 of the thin-film piezoelectric material 44 in FIG.

After the completion of the first dry etching, as shown in FIG. 10, the first etching mask 74 is dipped in an appropriate organic solvent, and if necessary, ultrasonic irradiation, ultrasonic vibration, etc. are performed to perform the first etching. The etching mask 74 is removed. Note that the second etching mask 76, the third etching mask 78, the fourth etching mask 80, and the fifth etching mask 82, which will be described later, are removed in the same manner.

In the first dry etching step, the above-mentioned etching products are generated, and as shown in FIG.
Thin film-shaped side wall deposits 12 are formed on the side surfaces of the stacked body.
That is, the side surface of the fourth electrode metal film 48, the side surface of the second thin film piezoelectric body 44, the side surface of the third electrode metal film 46,
Sidewall deposits 12 are formed on the side surface of the adhesive layer 50, the side surface of the second electrode metal film 42, the side surface of the first thin film piezoelectric body 38, and the side surface of the first electrode metal film 40. The peripheral region 44c of the second thin film piezoelectric body 44 is a surface substantially perpendicular to the etching progress direction, and is a surface on which the ion particles generated from the etching gas collide.
2 is not formed.

Next, the fourth electrode metal film 48 remained without being removed by etching in the first dry etching step.
On top of the second etching mask 7 as shown in FIG.
6 is formed. The area of the second etching mask 76 is larger than that of the first etching mask 74 of FIG.
The second etching mask 76 is used as the fourth electrode metal film 48.
In addition to, a part of the peripheral region 44c of the second thin film piezoelectric body 44 is covered.

Next, dry etching is performed, and as shown in FIG. 12, etching is performed until the thickness of the first thin film piezoelectric body 38 becomes h5 in the region not covered with the second etching mask 76 ( Second dry etching step). After completion of the dry etching, the second etching mask is removed as shown in FIG. By the second dry etching process described above, the central region 38b covered with the second electrode metal film 42 is formed on the upper surface of the first thin film piezoelectric body 38.
And surrounds the central region 38b and also includes the first thin film piezoelectric body 3
A peripheral region 38c where 8 is exposed is formed. Further, since a step is provided in the peripheral region 38c, the thickness (h5) of the first thin film piezoelectric body 38 in the peripheral region 38c is the central region 3
It is smaller than the thickness (h6) of the thin film piezoelectric body 38 in 8b.

In the second dry etching step, etching products are generated, and the side surface of the newly formed laminated body, that is, the side surface of the second thin film piezoelectric body 44 and the third electrode metal film 46. The side surface and the side surface of the adhesive layer 50,
The side surface of the second electrode metal film 42 and the first thin film piezoelectric body 38
A thin film side wall deposit 12 is formed on the side surface of the first electrode metal film 40 and on the side surface of the first electrode metal film 40. Since the peripheral region 38c of the first thin film piezoelectric body 38 is a surface substantially perpendicular to the etching proceeding direction and is a surface on which the ion particles generated from the etching gas collide, the sidewall deposit 12 is not formed.

Next, on the fourth electrode metal film 48, as shown in FIG.
As shown in FIG. 4, a third etching mask 78 is formed. This third etching mask 78 corresponds to the second etching mask 78 of FIG.
Has a larger area than that of the etching mask 76 of FIG.
Cover part of c. In addition, the third etching mask 78
Has an opening 37 for forming a through hole 36 in the element.

Next, as shown in FIG. 15, third dry etching is performed. In the third dry etching shown in FIG. 15, the first thin film piezoelectric body 38 having the thickness h5 in the region not covered with the third etching mask 78 is removed by etching at the outer edge portion of the element. At the same time, the fourth electrode metal film 48 is removed in the opening 37 of the third etching mask 78, and the second thin film piezoelectric material 44 is formed until the thickness of the second thin film piezoelectric material 44 becomes h7. A part of the body 44 is removed by etching (third dry etching step). After the etching is completed, the third etching mask 78 is removed as shown in FIG.

By the above-described third dry etching step, the second thin film piezoelectric body 44 is exposed at the opening 37 (the surface 44e of the second thin film piezoelectric body 44). Further, the surface 60 of the first electrode metal film 40 is exposed at the outer edge of the element. In this third dry etching step also, etching products are generated, and the side surface of the newly formed laminated body, that is, the side surface of the first thin film piezoelectric body 38 having the thickness h5 and the fourth portion in the opening 37. To the side surface of the electrode metal film 48 and the side surface of the second thin film piezoelectric body 44 to form a thin film side wall deposit 12. The side wall deposits 12 are not formed on the opening peripheral region 44e of the second thin film piezoelectric body 44 and the surface of the first electrode metal film 40 for the same reason as above.

Next, on the fourth electrode metal film 48, as shown in FIG.
As shown in FIG. 7, a fourth etching mask 80 is formed. This fourth etching mask 80 corresponds to the third etching mask of FIG.
The area of the opening 37 is smaller than that of the etching mask 78 of FIG.
Part of the exposed surface 60 and part of the surface 44e of the second thin film piezoelectric body 44 are covered.

Next, as shown in FIG. 18, fourth dry etching is performed. In the fourth dry etching shown in FIG. 18, the first electrode metal film 40 is formed on the outer edge of the device.
Are removed by etching. At the same time, the opening 3
7, the second thin film piezoelectric body 44 having the thickness h7 is removed to expose the third electrode metal film 46. After the etching is completed, as shown in FIG. 19, a fourth etching mask 80 is formed.
To remove.

In this fourth dry etching step, etching products are also generated, and the side surface of the newly formed laminated body, that is, the side surface of the first electrode metal film 40 and the second thin film of the opening 37. A thin film-shaped side wall deposit 12 is formed by adhering to the side surface of the piezoelectric body 44.

After this, as shown in FIG. 20, a fifth etching mask 82 having a smaller opening 37 and a larger mask surface area than the fourth etching mask 80 is formed. Next, as shown in FIG. 21, after performing dry etching until the second electrode metal film 40 is exposed in the opening 37 (sixth dry etching step), the sixth etching mask 82 is removed, The thin film piezoelectric element 30 shown in FIG. 4 is obtained. In addition, in the thin film piezoelectric element 30 of FIG.
Side wall deposits formed on the side surfaces of the substrate 70 are omitted.

When the thin film piezoelectric element is manufactured by the method described above, the peripheral region 38c, which is the electrode separation surface where the side wall deposit is not formed, can be formed on the upper surface of the first thin film piezoelectric element 38. First electrode metal film 40 and second
The electrode metal film 42 is not short-circuited via the side wall deposits 12, and the insulation between the first electrode metal film 40 and the second electrode metal film 42 can be improved. Further, since the peripheral region 44c and the opening peripheral region 44e where the side wall deposits are not formed can be formed on the upper surface of the second thin film piezoelectric body 44, the third electrode metal film 46 and the fourth electrode metal film 46 and the fourth peripheral region 44e can be formed.
The electrode metal film 48 is not short-circuited via the side wall deposit 12, and the insulation between the third electrode metal film 46 and the fourth electrode metal film 48 can be improved. Thereby, the reliability of the thin film piezoelectric element can be improved, and the product yield in the manufacturing process can be improved. 3 and 4, the thin film piezoelectric element 3
Although 0 is drawn as it exists on the substrate 70, the substrate 70 can be removed and used in the subsequent steps. For removing the substrate, a method such as wet etching, dry etching or polishing is used.

The thin film piezoelectric element 30 of the present embodiment manufactured as described above can be used for the head support mechanism 100 as shown in FIG. 22, for example. The head support mechanism 100 is provided in the magnetic disk device, and the magnetic head 1 mounted on the slider 102 as shown in FIG.
Support 01. The head support mechanism 100 includes a slider 102 via actuators 108A and 108B.
Load beam 104 and load beam 10 connected to
Base plate 105 and proximal end 10 connected to
4A and. The thin film piezoelectric element 30 of the present embodiment can be used for the actuators 108A and 108B.

For example, as shown in FIG. 22, the actuator 108A is displaced in the direction of arrow A, and the actuator 1
By displacing 08B in the direction of arrow B, the head 101 can be displaced in the direction of arrow C. In this way, by controlling the displacement of the actuators 108A and 108B, the head 101 mounted on the slider 102 can be positioned at an arbitrary position on the magnetic disk with extremely high accuracy.

Embodiment 3. FIG. 24 is a plan view of the actuator A1 according to the third embodiment of the present invention.
5 is a sectional view taken along line XX of FIG. The actuator A1 according to the third embodiment includes a pair of piezoelectric elements V1 and V2 manufactured by applying the manufacturing method described in the first and second embodiments. It is used for highly accurate positioning at a predetermined track position on the disc. In the actuator A1 of the third embodiment, the two piezoelectric elements V1 and V2 have the same structure and are provided symmetrically. In addition, each of the piezoelectric elements V1 and V2 has two thin film piezoelectric elements V so that a larger displacement amount can be obtained.
11 (V21) and V12 (V22) are laminated.

Here, the thin film piezoelectric element V11 (V21)
Each of which is provided with a first thin film piezoelectric body 138 between a first electrode metal film 140 and a second electrode metal film 142, and an electrode separation surface is provided on the outer peripheral side surface of the first thin film piezoelectric body 138. A certain step portion 138c is formed. Further, the thin film piezoelectric element V12 (V22) is configured such that the second thin film piezoelectric body 144 is provided between the third electrode metal film 146 and the fourth electrode metal film 148, respectively. 1
The step portion 144, which is an electrode separation surface, is formed on the outer peripheral side surface of
c is formed. Thin film piezoelectric element V11 (V21)
The thin film piezoelectric element V12 (V22) and the second electrode metal film 142 and the third electrode metal film 146 are opposed to each other and are bonded by the adhesive layer 150. Furthermore, thin film piezoelectric element V
11 (V21) and the thin film piezoelectric element V12 (V22) between the second electrode metal film 142 and the third electrode metal film 14.
6 are electrically connected to each other, and the first electrode metal film 140 and the fourth electrode metal film 148 are electrically connected to each other.

The third embodiment will be described below with reference to the drawings.
A method of manufacturing the actuator A1 will be described.

In this manufacturing method, first, the thin film piezoelectric element V
The unit laminate body for forming 11, V21 and the unit laminate body for forming the thin film piezoelectric elements V12, V22 are formed on different substrates. Specifically, as shown in FIG. 26A, a first electrode metal film 140 made of, for example, Pt is formed on a substrate 70 made of, for example, 0.5 mm thick single crystal magnesium oxide, A first thin film piezoelectric body 138 made of, for example, PZT is grown thereon, and a second electrode metal film 142 made of, for example, Pt is further formed thereon. Similarly, on the single crystal magnesium oxide substrate 72, the fourth electrode metal film 148 and the second thin film piezoelectric body 14 are formed.
A unit laminated body including the fourth electrode metal film 146 and the third electrode metal film 146 is formed. In FIG. 26A, the reference numerals of the substrate 72, the fourth electrode metal film 148, the second thin film piezoelectric body 144, and the third electrode metal film 146 are shown in parentheses.

Next, the adhesive layer 150 is formed to a thickness of, for example, 1.5 μm on the second electrode metal film 142 formed on the uppermost layer of the one substrate 70 (FIG. 26B). Then, the third electrode metal film 146 on the substrate 72 is adhered to the adhesive layer 150 so as to face it, and the one substrate 70
The unit laminate of (1) and the unit laminate of 172 of the other substrate are adhered (FIG. 26C). After the bonding, the substrate 72 on one side is removed by etching (FIG. 26 (d)). As described above, the first electrode metal film 140 and the first electrode metal film 140 are formed on the substrate 70.
Of the thin film piezoelectric body 138, the second electrode metal film 142, the adhesive layer 150, the third electrode metal film 146, the second thin film piezoelectric body 144, and the fourth electrode metal film 148 are formed. .

Next, the laminated structure formed on the substrate 70 is subjected to the following predetermined processing to form a plurality of actuators A1 arranged in a matrix.
First, 1 for each actuator A1
A pair of masks M10 and M20 are formed on the laminated structure (FIG. 27). Here, the mask M10 is a mask for forming the piezoelectric element V1, and the mask M20 is a mask for forming the piezoelectric element V2. Next, the mask M
After removing the portion where 10 and M20 are not formed from the surface of the fourth electrode metal film 148 to the middle of the second thin film piezoelectric body 144 by etching (FIGS. 28A and 28B),
The masks M10 and M20 are peeled off (FIG. 29A).
(B)). Through the steps up to this point, each piezoelectric element V1, V2
A portion above the second step portion 144c is formed. 28 and the following FIGS. 29 to 35,
(B) is sectional drawing about the bb line of (a).

Next, in order to form a portion above the first step portion 138c in each of the piezoelectric elements V1 and V2,
A mask M1 that covers a portion above the second step portion 144c and its peripheral portion (a portion to be the second step portion 144c).
1 and M21 are formed, and the portions where the masks M11 and M21 are not formed are etched halfway through the first thin film piezoelectric layer 138 (FIGS. 30A and 30B), and then the mask M is formed.
11 and M21 are peeled off. By this step, a portion above the first step portion 138c is formed in each of the piezoelectric elements V1 and V2. When the masks M11 and M21 are formed, the width of the second step portion 144c is, for example, 5 μm.
The dimensions of the masks M11 and M21 are set so as to be m. Further, in each of the piezoelectric elements V1 and V2, a cutout portion 8k2 for forming a control electrode 170 connecting the first electrode metal film 140 and the fourth electrode metal film 148 is formed at one end portion on the outer side. To be done.

Next, in each of the piezoelectric elements V1 and V2,
A mask M1 that covers a portion above the first step portion 138c and its peripheral portion (a portion to be the first step portion 138c).
2, M22 is formed (FIGS. 31A and 31B). Each of the piezoelectric elements V1,
Opening M1 for forming the recess H23a in V2
2a and M22a are formed. And the mask M1
Etching is performed until the surface of the first electrode metal film 140 is exposed in a portion where 2, 2 and M22 are not formed (FIG. 31).
(A) (b)). Through this step, the mask M1
In each of the openings M12a and M22a of M2 and M22, the second thin-film piezoelectric material 144 is removed up to the middle thereof, and the recess H23 is formed.
a is formed (FIGS. 31A and 31B).

Next, masks M13 and M2 for separating the first electrode metal film 140 into piezoelectric elements V1 and V2.
3 is formed. The masks M13 and 23 have recesses H2
Openings M13a and M23a that open the central portion of the surface of the second thin-film piezoelectric material 144 exposed on the bottom surface of 3a are formed (FIGS. 32A and 32B). Then, the mask M13,
First electrode metal film 140 in a portion where 23 is not formed
Of the piezoelectric element V by removing the
1 and V2 are separated, and at the same time, openings M13a and M23 are formed.
By removing the second thin-film piezoelectric material 144 opened by a, a recess H23b is formed and the surface of the third electrode metal film 146 is exposed at the bottom surface thereof (FIG. 32 (a)).
(B)). The recess H23b is provided outside the recess H23b.
A step portion S23a which is an electrode separation surface (inner peripheral electrode separation surface) is formed so as to surround the. Next, the mask M1
After peeling 3, 23, a mask M40 for forming a through hole TH23 is formed in the third electrode metal film 146 exposed by the openings M13a, M23a, and a through hole penetrating the adhesive layer 150. TH23 is formed (FIGS. 33A and 33B).

Next, an opening portion (opening portion 16) for connecting the through hole TH23 portion penetrating the adhesive layer 150, the first electrode metal film 140 and the fourth electrode metal film 148.
0a, 160b) covering the entire device except for the insulating film 160
Are formed (FIGS. 34 (a) and 34 (b)). After forming the insulating layer 160, the control electrode 170 connecting the first electrode metal film 140 and the fourth electrode metal film 148 and the second electrode metal film 1
Common electrode 1 connecting 42 and the third electrode metal film 146
And 80 (FIGS. 35 (a) and 35 (b)).

In the actuator of the third embodiment configured as described above, the pair of piezoelectric elements V1 and V2 each have the step portion 138c on the outer peripheral side surface of the first thin film piezoelectric element 138, and A step portion 144c is provided on the outer peripheral side surface of the second thin film piezoelectric body 144. As a result, the side wall deposits that cause a leak current that adheres to the side wall during the manufacturing process can be electrically separated by the step part 138c and the step part 144c. In addition, the actuator of the third embodiment has the pair of piezoelectric elements V
Since each of 1 and V2 has the step portion S23a between the recess H23a and the recess H23b, the recess H23a
The side wall adhered matter attached to the side wall of the recess H23b and the side wall adhered matter attached to the side wall of the recess H23b can be electrically separated by the step S23a. Therefore, the actuator A1 according to the third embodiment has the first electrode metal film 140 and the second electrode metal film 1 in the pair of piezoelectric elements V1 and V2, respectively.
Between the third electrode metal film 146 and the fourth electrode
It is possible to suppress the leak current between the electrode metal film 148 of FIG. As a result, according to the actuator of the third embodiment, it is possible to provide an actuator in which the leak current of the entire element can be made extremely small.

FIG. 36 is a graph showing the leak current with respect to the voltage of the actuator of the third embodiment. In the actuator used for this measurement, the thickness of the first thin film piezoelectric body 138 and the second thin film piezoelectric body was 2.5 μm, and the widths of the step portion 138c and the step portion 144c were each 5 μm. Moreover, the area of the first to fourth electrode metal films is larger in the upper electrode, but is approximately 1.2 m.
It was set to be m ² . In this measurement, the measurement voltage was set to 1 V step from 1 to 10 V, and the current value at the time when each voltage was continuously applied for 20 seconds was measured. In addition, in FIG. 36, for comparison, the leak in the actuator of the comparative example in which the first thin film piezoelectric body 138 and the second thin film piezoelectric body 144 are shaped without forming the step portions 138c and 144c, respectively. The current is also shown. That is, in the actuator of this comparative example, etching from the fourth electrode metal film 148 to the exposure of the first electrode metal film 140 is performed by one continuous etching process using one mask.

As shown in FIG. 36, the actuator having the step portion 138c and the step portion 144c according to the third embodiment has the step portion 138c and the step portion 1c.
It is possible to reduce the leak current by about two digits compared with the actuator of the comparative example processed by etching once without forming 44c.

<Mounting> As shown in FIG. 37, the actuator element composed of the pair of piezoelectric elements V1 and V2 thus formed on the substrate 70 is temporarily fixed with adhesive 27.
6 and the temporary fixing substrate 27 is covered with the temporary fixing adhesive 276.
Bond 4 together. The temporary adhesive 276 is applied to the substrate 70.
It is required that the temporary fixing substrate 274 does not peel off in the removing step and the material is resistant to the chemical solution for etching and removing the substrate 70 or the reaction gas in the dry etching. As the temporary fixing adhesive 276, for example, tar wax, acrylic adhesive,
A thermoplastic resin, a photoresist or the like can be used.

Further, as the temporary fixing substrate 274, various materials such as glass, metal, ferrite, altic (mixed ceramics of alumina and titanium carbide), or ceramic material such as alumina can be used as they are. However, it is required to select a material that is not corroded by a chemical solution for removing the substrate 70, a gas, a gas containing active species at the time of dry etching, or a gas at least a part of which is ionized at the time of dry etching.

After the temporary fixing substrate 274 is bonded in this way, the substrate 70 is removed by etching with a chemical solution (FIG. 38).

Next, the plurality of actuators A1 arranged on the temporary fixing substrate 274 are separated from the temporary fixing substrate 74 while maintaining the positional relationship when being held by the temporary fixing substrate 274. Then, the temporary fixing substrate 274 to which the plurality of actuators A1 are temporarily fixed is placed in a container containing a solution for dissolving the temporary fixing adhesive 276, and the temporary fixing adhesive 276 is dissolved. In order to separate a plurality of actuator elements from the temporary fixing substrate 74 while maintaining the positional relationship when held on the temporary fixing substrate 274, for example, each actuator element arranged on the temporary fixing substrate 74 is used. It suffices to use a holding container in which a storage portion (recess) is formed corresponding to the above.

Specifically, the holding container is made of, for example, a mesh so that the liquid can freely enter and leave the housing, and the actuator A1 is separated from the temporary fixing substrate 74 as follows. . That is, the temporary fixing substrate 74 and the holding container are aligned so that the accommodating portions are opposed to the individual actuators arranged on the temporary fixing substrate 74, and the holding container is placed downward to hold the entire solution. Put it in the container. In this way, the temporary adhesive 2
When 76 is melted, the actuator element is separated from the temporary fixing substrate 74, and the pair of piezoelectric elements V1 and V2 are housed in the housing part of the holding container without being separated. Since liquid can freely enter the individual storage portions of this holding container, it can be washed as it is and further dried as it is. Further, since they are arranged in the holding container in a regular arrangement state that is almost the same as the arrangement state formed on the substrate 70, the mounting described later can be easily performed. As the solution, for example, xylene may be used when the tar wax is used as the temporary adhesive 276, and a dedicated solution may be used when the acrylic adhesive is used.

In this way, the actuator elements composed of the pair of piezoelectric elements V1 and V2 separated from the substrate 70 and arranged in the holding container are mounted on the flexure 330 using the mounting machine, Predetermined wiring is applied. As described above, the actuator including the pair of piezoelectric elements V1 and V2 is mounted on the flexure 330.

<Head Positioning Operation> In the magnetic disk recording / reproducing apparatus, the positioning operation using the actuator of the third embodiment will be described below. Figure 3
9 is a schematic diagram showing the outline of the configuration of the magnetic disk device. In FIG. 39, 370 is a magnetic disk, 301 is a spindle motor for rotating the magnetic disk 370 at high speed, and 302 is a head actuator. The head actuator 302 has an actuator arm 304, and a head support mechanism 300 including a slider support beam 320 and a slider 350 is provided at the tip of the actuator arm 304.

The head support mechanism 300 is shown in FIGS.
As shown in FIG.
20, a flexure 330, an actuator A1 including piezoelectric elements V1 and V2, a slider 350, and a magnetic head 360. Here, the base plate 310 is for attaching to the actuator arm 304, and the load beam 320 is fixed to the base plate 310. In addition, a projection 328 that serves as the center of rotation of the slider 350 is provided at the tip of the load beam 320. A slider support member 332 is rotatably supported on the protrusion 328, and a slider 350 having a head 360 mounted thereon is fixed to the slider support member 332. A tip portion of the flexure 330 is fixed between the slider 350 and the slider support member 332, and an actuator including a pair of piezoelectric elements V1 and V2 is provided on the flexure 330 immediately before the slider 350.

In the head support mechanism configured as described above, the actuator including the pair of piezoelectric elements V1 and V2 expands and contracts the piezoelectric elements V1 and V2 according to the control signal input from the head positioning control unit 308. Then, by rotating the slider 350 on which the head 360 is mounted (FIG. 40B), the head is positioned with high accuracy. The flexure 330 is provided with wiring for connecting to the head 360 and the piezoelectric elements V1 and V2.

Fourth Embodiment Embodiment 4 according to the present invention
The actuator of No. 3 has the same basic configuration as that of the actuator of Embodiment 3, but the connecting portion between the second electrode metal film 142 and the third electrode metal film 146 in each piezoelectric element is the same as that of Embodiment 3. Different from the actuator of. That is, the actuator of the fourth embodiment is an actuator used for positioning the head slider of the magnetic disk recording / reproducing apparatus at a predetermined track position on the disk with high accuracy, and includes (1) the first and second embodiments. The pair of piezoelectric elements V1 and V2 manufactured by applying the manufacturing method described in 1. is provided, and (2) the two piezoelectric elements V1 and V2 provided symmetrically each have a larger displacement. This is the same as the actuator of the third embodiment in that the two thin film piezoelectric elements V11 (V21) and V12 (V22) are laminated so that the amount can be obtained. Hereinafter, a method for manufacturing the actuator according to the fourth embodiment will be described.

In the method of manufacturing the actuator according to the fourth embodiment, steps up to the formation of the portion above the second step portion 144c of each piezoelectric element V1, V2 (FIG. 26).
29 to 29) are the same as the method of manufacturing the actuator of the third embodiment, the description thereof will be omitted. In the following description and drawings, the same components as those in the third embodiment are designated by the same reference numerals.

After forming the portions above the second step portion 144c of each of the piezoelectric elements V1 and V2, the second step portion 1 is formed.
Masks M11 and M21 that cover the portion above 44c and the second step portion 144c are formed, and the masks M11 and M2 are formed.
No. 1 is not formed on the second thin film piezoelectric layer 148
Is etched until the third electrode metal film 146 is exposed (FIGS. 42A and 42B). As a result, the second thin film piezoelectric layer 148 is processed into a predetermined shape. Here, in each piezoelectric element V1 and V2, the second thin film piezoelectric layer 14
8 includes a first electrode metal film 140 and a fourth electrode metal film 1
A notch 148k2 for forming the control electrode 170 connecting 48 and a notch 148k1 for forming the through hole TH23 connecting the second electrode metal film 142 and the third electrode metal film 146 are formed. To be done.

Next, after the masks M11 and M21 are peeled off, the mask M1 which covers the shape-processed second thin film piezoelectric layer 148 and its peripheral portion (for example, a peripheral portion having a width of 5 μm).
4, M24 are formed, and a portion where the masks M14 and M24 are not formed is etched halfway through the first thin film piezoelectric layer 138 (FIGS. 43A and 43B). By this etching, in the piezoelectric elements V1 and V2, the first
A portion above the step portion 138c is formed. At this time, the masks M14 and M24 are located near the second thin film piezoelectric layer 148 (for example, in the cutout portion 148k2).
Not more than 5 μm) and notch part 148k1
In, the cutout portion 148k1 is formed so as to cover the entire cutout portion 148k1. Thereby, in the cutout portion 148k1,
The second electrode metal film 146 exposed in a rectangular shape, the second
146d for forming a through hole TH23 connecting the electrode metal film 142 of FIG.
Is secured.

Then, after removing the masks M14 and M24, the first step portion 1 of each piezoelectric element V1 and V2 is removed.
Mask M1 for covering the portion above 38c and the vicinity of the peripheral portion
5, M25 is formed, and the portion of the first thin film piezoelectric layer 138 where the mask is not formed is etched until the surface of the first electrode metal film 140 is exposed. This mask M1
Also, M5 and M25 are formed so that the notch 148k2 of the second thin film piezoelectric layer 148 covers only the peripheral portion near the second thin film piezoelectric layer 148 (for example, ≦ 5 μm). Thereby, in the first thin film piezoelectric layer 138, the cutout portion 138 corresponding to the cutout portion 148k2.
k2 is formed. By this etching step, a portion of each piezoelectric element V1, V2 above the first electrode metal film 140 is formed. In addition, between the notch portion 148k2 and the notch portion 138k2, there is a step portion having a width of, for example, about 5 μm which is an electrode separation surface orthogonal to the dry etching direction.

Next, after removing the masks M15 and M25, a mask M41 for processing the shape of the first electrode metal film 140 in each of the piezoelectric elements V1 and V2 is formed, and the mask M41 is formed. The non-existing portion is etched until the substrate 70 is exposed. The mask M41 is formed so as to cover the entire cutout portion in the cutout portion 138k2, and an opening portion for forming a through hole TH23 in the region 146d before etching is formed in the mask M41. By forming the mask 41 in this manner, the outer shape of the first electrode metal film in each of the piezoelectric elements V1 and V2 is processed, and the region 146 is formed.
through hole TH2 penetrating the insulating layer 150 at d
3 in which the first electrode metal film 140 is exposed in a rectangular shape in the cutout portion 138k2.
0d is formed. This region 140d is provided with the control electrode 17
It is used as a part forming 0.

Next, an opening 161c for opening the through hole TH23 portion penetrating the adhesive layer 150, and an opening (opening 161a) for connecting the first electrode metal film 140 and the fourth electrode metal film 148. , 161b) to form an insulating film 161 covering the entire element (FIG. 46 (a)).
(B)). After forming the insulating layer 161, the control electrode 171, the second electrode metal film 142, and the third electrode metal film 1 that connect the first electrode metal film 140 and the fourth electrode metal film 148 are connected.
And a common electrode 181 connecting 46 is formed (FIG. 47).
(A) (b)).

In the actuator A2 of the fourth embodiment configured as described above, as in the third embodiment, the pair of piezoelectric elements V1 and V2 are provided on the outer peripheral side surface of the first thin film piezoelectric element 138, respectively. The step portion 138c is provided, and the step portion 144c is provided on the outer peripheral side surface of the second thin film piezoelectric body 144.
have. As a result, the side wall deposits that cause a leak current that adheres to the side wall during the manufacturing process can be electrically separated by the step part 138c and the step part 144c. In addition, the actuator A2 of the fourth embodiment
Since the pair of piezoelectric elements V1 and V2 each have a step portion, which is an electrode separation surface orthogonal to the dry etching direction, between the notch portion 148k2 and the notch portion 138k2. Side wall deposits attached to the side walls of the portion 148k2 and the cutout portion 138k2 can be electrically separated by the step portion. Therefore, the actuator A2 of the fourth embodiment has the pair of piezoelectric elements V1 and V2.
2 can suppress the leak current between the first electrode metal film 140 and the second electrode metal film 142 and the leak current between the third electrode metal film 146 and the fourth electrode metal film 148, respectively. it can. As a result, according to the actuator A2 of the fourth embodiment, it is possible to provide an actuator in which the leak current of the entire element can be made extremely small.

[0107]

As described above, according to the thin film piezoelectric element of the present invention, the thin film piezoelectric element is provided with the peripheral area on which the thin film piezoelectric element is exposed. The deposits on the sides of the are separated. Accordingly, the electrode metal films formed on both surfaces of the thin film piezoelectric body are not short-circuited with each other through the side wall deposits, and the insulation property between the electrode metal films can be improved. It is possible to improve the sex. Further, according to the present invention, it is possible to provide an actuator having a small leak current and high reliability.

[Brief description of drawings]

1A and 1B show a first embodiment of the present invention.
FIG. 3 is a cross-sectional view showing a thin film piezoelectric element according to the present invention.

2A to 2D are cross-sectional views illustrating a method of manufacturing the thin film piezoelectric element according to the first embodiment of the present invention.

FIG. 3 is a plan view showing a thin film piezoelectric element according to a second embodiment of the present invention.

FIG. 4 is a cross-sectional view of the thin film piezoelectric element of FIG. 3, taken along line 4A-4A ′.

FIG. 5 is a diagram schematically showing an example of a voltage applying method for a thin film piezoelectric element according to a second embodiment of the present invention.

FIG. 6 is a cross-sectional view illustrating the method of manufacturing the thin film piezoelectric element according to the second embodiment.

FIG. 7 is a cross-sectional view illustrating the method of manufacturing the thin film piezoelectric element according to the second embodiment.

FIG. 8 is a cross-sectional view illustrating the method of manufacturing the thin film piezoelectric element according to the second embodiment.

FIG. 9 is a cross-sectional view illustrating the method of manufacturing the thin film piezoelectric element according to the second embodiment.

FIG. 10 is a cross-sectional view illustrating the method of manufacturing the thin film piezoelectric element according to the second embodiment.

FIG. 11 is a cross-sectional view illustrating the method of manufacturing the thin film piezoelectric element according to the second embodiment.

FIG. 12 is a cross-sectional view illustrating the method of manufacturing the thin film piezoelectric element according to the second embodiment.

FIG. 13 is a cross-sectional view illustrating the method of manufacturing the thin film piezoelectric element according to the second embodiment.

FIG. 14 is a cross-sectional view illustrating the method of manufacturing the thin film piezoelectric element according to the second embodiment.

FIG. 15 is a cross-sectional view illustrating the method of manufacturing the thin film piezoelectric element according to the second embodiment.

FIG. 16 is a cross-sectional view illustrating the method of manufacturing the thin film piezoelectric element according to the second embodiment.

FIG. 17 is a cross-sectional view illustrating the method of manufacturing the thin film piezoelectric element according to the second embodiment.

FIG. 18 is a cross-sectional view illustrating the method of manufacturing the thin film piezoelectric element according to the second embodiment.

FIG. 19 is a cross-sectional view illustrating the method of manufacturing the thin film piezoelectric element according to the second embodiment.

FIG. 20 is a cross-sectional view illustrating the method of manufacturing the thin film piezoelectric element according to the second embodiment.

FIG. 21 is a cross-sectional view illustrating the method of manufacturing the thin film piezoelectric element according to the second embodiment.

FIG. 22 is a diagram showing a head support mechanism using the thin film piezoelectric element of the second embodiment.

23A to 23C are cross-sectional views showing a manufacturing process of a general thin film piezoelectric element.

FIG. 24 is a plan view showing an actuator A1 according to Embodiment 3 of the present invention.

25 is a cross-sectional view taken along the line XX of the actuator A1 of FIG.

FIG. 26 is a cross-sectional view illustrating a step of forming a laminated body on a substrate in the manufacturing method according to the third embodiment.

FIG. 27 is a plan view of the step of forming a mask on the substrate in the manufacturing method according to the third embodiment.

FIG. 28 is a plan view (a) and a cross-sectional view (b) illustrating a step of forming a portion of the piezoelectric elements V1 and V2 above the second step portion 144c in the manufacturing method according to the third embodiment.
Is.

FIG. 29 is a plan view (a) showing a state in which the masks M10 and M20 have been peeled off after forming portions of the piezoelectric elements V1 and V2 above the second step portion 144c in the manufacturing method according to the third embodiment; It is sectional drawing (b).

FIG. 30 is a plan view (a) and a cross-sectional view (b) illustrating a step of forming a portion of the piezoelectric elements V1 and V2 above the first step portion 138c in the manufacturing method according to the third embodiment.
Is.

FIG. 31 is a plan view (a) and a sectional view (b) showing a state where the processing of the first thin film dielectric of the piezoelectric elements V1 and V2 is completed in the manufacturing method according to the third embodiment.

FIG. 32 is a plan view (a) and a sectional view (b) showing a state in which the processing of the first electrode metal film of the piezoelectric elements V1 and V2 is completed in the manufacturing method according to the third embodiment.

FIG. 33 is a plan view (a) and a sectional view (b) showing a step of forming a through hole TH23 penetrating the adhesive layer 150 in the manufacturing method according to the third embodiment.

FIG. 34 is a plan view (a) and a sectional view (b) showing a step of forming an insulating film 160 covering the entire element in the manufacturing method according to the third embodiment.

FIG. 35 is a plan view (a) and a sectional view (b) showing a step of forming a control electrode 170 and a common electrode 180 in the manufacturing method of the third embodiment.

FIG. 36 is a graph showing leakage current with respect to voltage of the actuator according to the third embodiment.

FIG. 37 is a sectional view (1) showing a step of transferring the actuator element according to the third embodiment to the temporary fixing substrate.

FIG. 38 is a sectional view (2) showing a step of transferring the actuator element according to the third embodiment to the temporary fixing substrate.

FIG. 39 is a schematic diagram showing an outline of the configuration of a magnetic disk device.

FIG. 40 is a perspective view showing a configuration of a head support mechanism of the magnetic disk device.

FIG. 41 is an exploded perspective view showing the configuration of the head support mechanism of the magnetic disk device.

FIG. 42 is a plan view (a) and a cross-sectional view (b) illustrating a step of forming a portion of the piezoelectric elements V1 and V2 above the third electrode metal film in the method of manufacturing an actuator according to the fourth embodiment. Is.

FIG. 43 is a plan view (a) and a sectional view (b) showing a step of forming a portion of the piezoelectric elements V1 and V2 above the first step portion 138c in the manufacturing method according to the fourth embodiment.

FIG. 44 is a plan view (a) and a cross-sectional view (b) illustrating a step of forming a portion of the piezoelectric elements V1 and V2 above the first electrode metal film in the manufacturing method according to the fourth embodiment. .

FIG. 45 is a plan view (a) and a sectional view (b) showing a state in which the processing of the first electrode metal film of the piezoelectric elements V1 and V2 has been completed in the manufacturing method of the fourth embodiment.

FIG. 46 is a plan view (a) and a cross-sectional view (b) showing a step of forming an insulating film 160 covering the entire element in the manufacturing method according to the fourth embodiment.

FIG. 47 is a plan view (a) and a sectional view (b) showing a step of forming a control electrode 170 and a common electrode 180 in the manufacturing method according to the fourth embodiment.

[Explanation of symbols]

2: Thin-film piezoelectric material element, 2A: Thin-film piezoelectric material element, 4: Thin-film piezoelectric material, 4a: Lower surface of thin-film piezoelectric material, 4b: Central area of thin-film piezoelectric material, 4c: Surrounding area of thin-film piezoelectric material, 4d: Thin-film piezoelectric material The upper surface of the body, 6: the first electrode metal film, 7: the side surface of the first electrode metal film, 8: the second electrode metal film, 9: the side surface of the thin film piezoelectric body, 11: the second electrode metal film Side surface, 12: deposit on side wall, 14: first etching mask, 18: second etching mask, 30: thin film piezoelectric element, 32: first thin film piezoelectric element, 34: second thin film piezoelectric element , 36: through holes, 38: first thin film piezoelectric body, 40: first electrode metal film, 42: second electrode metal film, 44: second thin film piezoelectric body, 46: third electrode metal film , 48: fourth electrode metal film, 50: adhesive layer

─────────────────────────────────────────────────── ─── Continuation of front page (51) Int.Cl. ⁷ Identification code FI theme code (reference) H01L 41/18 H01L 41/08 J 41/187 41/22 Z 41/22 41/18 101D 101Z

Claims (17)

[Claims] 1. A thin-film piezoelectric material having a first surface and a second surface facing each other, a first electrode metal film on the first surface, and a second electrode on the second surface. In a thin film piezoelectric element including at least one unit laminate body including a metal film, between the first electrode metal film and the second electrode metal film,
A thin film piezoelectric element, wherein an electrode separation surface composed of the thin film piezoelectric surface parallel to the first surface is provided. 2. The thin film piezoelectric element according to claim 1, wherein the electrode separation surface is a step portion provided on a side surface of the thin film piezoelectric body. 3. The thin film piezoelectric element according to claim 1, wherein the electrode separation surface is an outer peripheral portion of the second surface located outside the second electrode metal film. 4. The thin film piezoelectric element according to claim 1, wherein the width of the electrode separation surface is 0.1 μm or more. 5. A first thin film piezoelectric body having a first surface and a second surface facing each other, a first electrode metal film on the first surface, and a second electrode metal film on the second surface. A first unit laminated body including an electrode metal film, a second thin film piezoelectric body having a third surface and a fourth surface facing each other, and a third electrode metal film on the third surface, A second unit laminate composed of a fourth electrode metal film on the fourth surface, the first unit laminate and the second unit laminate being the second electrode metal film. And a third electrode metal film facing each other and being bonded, wherein a thin film piezoelectric element is provided between the first electrode metal film and the second electrode metal film.
A first electrode separation surface composed of the surface of the first thin-film piezoelectric material parallel to the first surface, and between the third electrode metal film and the fourth electrode metal film, 3. A thin film piezoelectric element having a second electrode separation surface formed of the surface of the second thin film piezoelectric body parallel to the surface of No. 3. 6. The second electrode metal film and the third electrode metal film are bonded to each other via an insulating adhesive layer,
6. The thin film piezoelectric element according to claim 5, wherein said electrode metal film and said third electrode metal film are connected via a through hole formed in said adhesive layer. 7. The through hole is formed in a recess provided by removing the fourth electrode metal film and the second thin film piezoelectric material so as to reach the third electrode metal film, 7. The thin film piezoelectric element according to claim 6, wherein the recess has an electrode separation surface parallel to the third surface on an inner peripheral side surface of the second thin film piezoelectric body. 8. The through hole is formed in a cutout portion provided by removing the fourth electrode metal film and the second thin film piezoelectric body so as to reach the third electrode metal film. 7. The thin film piezoelectric element according to claim 6, wherein an electrode separation surface parallel to the third surface is provided on a side surface of the second thin film piezoelectric body in the cutout portion. 9. An actuator comprising a pair of piezoelectric elements that expand and contract in directions parallel to each other, wherein the piezoelectric elements each have a first surface and a second surface facing each other. The thin-film piezoelectric material, the first electrode metal film on the first surface, and the second electrode
A first unit laminate composed of the second electrode metal film on the surface of the first thin film, a second thin film piezoelectric body having a third surface and a fourth surface facing each other, and a first thin film on the third surface. A second unit laminated body including an electrode metal film of No. 3 and a fourth electrode metal film on the fourth surface, and the first unit laminated body and the second unit laminated body. The second electrode metal film and the third electrode metal film are opposed to each other and bonded to each other, and between the first electrode metal film and the second electrode metal film,
A first electrode separation surface composed of the surface of the first thin-film piezoelectric material parallel to the first surface, and between the third electrode metal film and the fourth electrode metal film, An actuator having a second electrode separation surface formed of the surface of the second thin-film piezoelectric material parallel to the surface No. 3. 10. The piezoelectric element is provided with the second element, respectively.
And the third electrode metal film are bonded to each other via an insulating adhesive layer, and the second electrode metal film and the third electrode metal film are bonded to each other.
10. The actuator according to claim 9, wherein said electrode metal film is connected via a through hole formed in said adhesive layer. 11. The through hole and the second electrode metal film and the second electrode metal film so as to reach the third electrode metal film.
11. The thin film piezoelectric body is formed in a recess provided by removing the thin film piezoelectric body, and the recess has an electrode separation surface parallel to the third surface on an inner peripheral side surface of the second thin film piezoelectric body. Actuator. 12. The through hole and the second electrode metal film and the second electrode metal film so as to reach the third electrode metal film.
11. The thin film piezoelectric material is formed in a cutout portion provided by removing the thin film piezoelectric material, and an electrode separation surface parallel to the third surface is formed on a side surface of the second thin film piezoelectric material in the cutout portion. Actuator described. 13. An electrode metal film for connecting the second electrode metal film and the third electrode metal film formed in the through hole of one piezoelectric element of the pair of piezoelectric elements, 11. The actuator according to claim 10, wherein an electrode metal film that connects the second electrode metal film and the third electrode metal film formed in the through hole of the other piezoelectric element is connected to each other. 14. A manufacturing method for manufacturing a thin film piezoelectric element by processing a laminated body formed by laminating a lower electrode metal film, a thin film piezoelectric body and an upper electrode metal film into a predetermined shape by dry etching, A first etching step of forming a first mask having a predetermined shape on the upper electrode metal film and performing dry etching until the thin film piezoelectric surface is exposed outside the first mask; After removing the second mask, a second mask is formed so as to extend and cover a part of the thin film piezoelectric material around the upper electrode metal film processed into the above-described predetermined shape. 2. A method for manufacturing a thin film piezoelectric element, comprising a second etching step of removing the thin film piezoelectric material and the lower electrode metal film located outside the mask of No. 2 by dry etching. 15. The method of manufacturing a thin film piezoelectric element according to claim 14, wherein, in the first etching step, the thin film piezoelectric element is removed by etching halfway in the thickness direction. 16. Two unit laminates, each of which is formed by laminating a first electrode metal film, a thin film piezoelectric body, and a second electrode metal film, wherein a second electrode metal film of one unit laminate and another unit laminate are formed. A manufacturing method for manufacturing a thin film piezoelectric element by processing a laminated body, which is bonded via an adhesive layer so as to face the first electrode metal film of the body, into a predetermined shape by dry etching. When processing the stacked body, a lower etching step of processing the first electrode metal film into a predetermined shape is provided separately from an upper etching step of processing the second electrode metal film into a predetermined shape. In the step, a mask for forming the first electrode metal film is formed so as to cover the second electrode metal film and a part of the thin film piezoelectric body exposed around the second electrode metal film,
A method of manufacturing a thin film piezoelectric element, characterized in that the thin film piezoelectric body and the first electrode metal film located outside the mask are removed. 17. The lower etching process for processing the first electrode metal film of the other unit laminated body and the upper etching process for processing the second electrode metal film of the one unit laminated body are continuously performed using the same mask. 17. The method of manufacturing a thin film piezoelectric element according to claim 16, which is the etching step.