JP2003179204A - Power module with cooling mechanism and method of cooling the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a power module which restrains a temperature distribution generated by heat generated by a power element, which cools the power element uniformly, which does not break down the power element and which is of high reliability. <P>SOLUTION: In the power module which is composed of a plurality of power elements 1, a heat dissipating base 6, an output terminal 5 and a control terminal 4, thermoelectric modules 7 in which thermoelectric semiconductor elements 7a for thermoelectric conversion are arranged on an insulating substrate so as to be divided into a plurality of regions are attached to positions coming into close contact with, or adjacent to, rear surfaces of the power elements 1, the plurality of regions are arranged individually at the respective power elements 1, and the mounting number of the elements and/or the arrangement interval of the elements are changed in the respective regions. <P>COPYRIGHT: (C)2003,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a cooling structure and a cooling method for a power module used in a servo amplifier or an inverter and constituting a power conversion circuit.

[0002]

2. Description of the Related Art In a conventional power module, a power semiconductor element is mounted on an insulating circuit board, and the power semiconductor element and output terminals and control terminals are connected by aluminum wires and pattern wiring on the insulating circuit board. It was mounted on the heat dissipation base. FIG. 13 shows a conventional device. 1 is a power semiconductor element, 2 is an insulating circuit board, 3 is an aluminum wire, 4 is a control terminal, 5 is an output terminal, and 6 is a heat dissipation base. In the above configuration, the power semiconductor element 1, the control terminal 4, and the output terminal 5 are mounted on the insulated circuit board 2 by soldering, and the power semiconductor element 1, the control terminal 4 and the output terminal 5 are electrically connected by the aluminum wire 3. This was solder-mounted on the heat dissipation base 6. In the configuration of the power module as described above, it becomes possible to operate the load device from the output terminal 5 by sending a control signal from the external device to the control terminal 6 to switch the power semiconductor element 1 to perform an inverter operation. There is. Further, the heat generated in the power semiconductor element 1 when the inverter operates is once transferred to the insulating circuit board 2 and radiated from the heat radiation base to the outside.

[0003]

However, in the above-mentioned conventional power module, the heat of the plurality of power semiconductor elements generated during the operation of the inverter is once transferred to the insulating circuit board and radiated to the outside from the heat dissipation base. There is. Therefore, when the power semiconductor element that is energized when the inverter operates and the heat generation position in the power module changes, the temperature distribution in the power module changes over time, so heat radiation becomes insufficient depending on the location. There is a problem that the power semiconductor element is thermally destroyed. Further, when the same amount of current is applied to a plurality of power semiconductor elements, the temperature rise of the power semiconductor element located at the center of the power module is relatively higher than the temperature rise of the power semiconductor element located at the end of the power module. There has been a problem that the power semiconductor element in the central portion becomes higher in temperature and is preferentially thermally destroyed. Therefore, an object of the present invention is to suppress the temperature distribution generated by heat generation of a plurality of power semiconductor elements and to uniformly cool the power semiconductor elements so that the power elements are not destroyed, and a highly reliable power module cooling structure and cooling method. Is to provide.

[0004]

In order to solve the above problems, the invention of a power module with a cooling mechanism according to claim 1 is a power module having a plurality of power semiconductor elements, a heat dissipation base, an output terminal and a control terminal. A thermoelectric module in which an insulating substrate is provided on a thermoelectric semiconductor element for thermoelectric conversion is arranged for each power semiconductor element at a position close to or close to the lower surface of the power semiconductor element. According to a second aspect of the present invention, in the power module according to the first aspect, thermoelectric modules having different numbers of mounted thermoelectric semiconductor elements are individually arranged in the power semiconductor elements. With the above configuration,
Since the plurality of power semiconductor elements can be individually cooled, the temperature distribution caused by the heat generation of the plurality of power semiconductor elements can be suppressed, and the thermal destruction of the power semiconductor elements can be prevented.

According to the invention of a power module with a cooling mechanism as defined in claim 3, in a power module comprising a plurality of power semiconductor elements, a heat radiation base, an output terminal and a control terminal, a thermoelectric semiconductor element for thermoelectric conversion is placed on an insulating substrate. The thermoelectric module divided into a plurality of regions is attached to the lower surface of the power semiconductor element in a close contact or close position. According to a fourth aspect of the invention, in the power module according to the third aspect, a plurality of regions in which the thermoelectric semiconductor elements are arranged are individually arranged for each of the power semiconductor elements. With the above configuration,
Since it is possible to energize and cool each region of the thermoelectric module in accordance with the heat generation of the power semiconductor element, the temperature rise of the power semiconductor element can be controlled individually or in each region.
According to a fifth aspect of the present invention, in the power module according to the third or fourth aspect, the number of mounted elements and / or the arrangement interval of the elements are changed for each of a plurality of regions in which the thermoelectric semiconductor elements are arranged. . In this way, since the number of thermoelectric semiconductor elements to be mounted and the element spacing are changed for each region, the cooling capacity can be changed for each region even if a plurality of regions are controlled under the same conditions. According to a sixth aspect of the present invention, there is provided a power module cooling method according to the first or second aspect, wherein the plurality of thermoelectric modules of the power semiconductor are individually conducted and cooled. According to a seventh aspect of the invention, in cooling the power module according to any one of the third to fifth aspects, a plurality of regions in which the thermoelectric semiconductor elements are arranged are connected by wiring, and each of the combined regions is individually connected. It is characterized by energizing and cooling. The invention according to claim 8 is characterized in that, in the cooling of the power module according to claim 4, electricity is supplied to each of a plurality of regions in which the thermoelectric semiconductor elements are arranged to individually cool the power semiconductor elements. With the above configuration, the plurality of power semiconductor elements can be cooled individually or in each region, so that the temperature distribution generated by the heat generation of the plurality of power semiconductor elements can be suppressed and the thermal destruction of the power semiconductor elements can be prevented. can do.

[0006]

BEST MODE FOR CARRYING OUT THE INVENTION A first embodiment of the present invention will be described with reference to FIGS. FIG. 1 is a side sectional view of a power module showing a first embodiment of the present invention. In the figure, 7 is a thermoelectric module, which comprises a thermoelectric semiconductor element 7a, an insulating substrate 7b, an insulating substrate 7c, and a terminal 7d. In the thermoelectric module 7, the N-type and P-type thermoelectric semiconductor elements 7a are arranged in order, and the insulating substrate 7b and the insulating substrate 7 are arranged.
It is sandwiched by c. Circuit wiring is provided on the lower surface of the insulating substrate 7b on the thermoelectric semiconductor element 7a side and the upper surface of the insulating substrate 7c so that the thermoelectric semiconductor elements 7a are connected in series, and the thermoelectric semiconductor element 7a and the insulating substrate 7b are connected. The insulating substrate 7c is fixed by solder or the like. Terminal 7d
Has one end on the thermoelectric semiconductor element 7a on the insulating substrate 7c.
Are connected to the start and end points of the connected circuit wiring.
Circuit wiring 8 is formed on the upper surface of the insulating substrate 7b so that a power source and a load are connected via the power semiconductor element 1 and the output terminal 5.
The power semiconductor element 1, the control terminal 4 and the output terminal 5 are fixed to each other. The insulating substrate 7c is fixed to the heat dissipation plate 1 by soldering or the like.

Next, cooling of a power module having six such thermoelectric modules 7 mounted on a heat dissipation base will be described with reference to FIG. In the figure, six thermoelectric modules 7 each having one IGBT power semiconductor element 1 mounted on a copper heat dissipation base 6 having a thickness of 4 mm are mounted by soldering to form an inverter circuit. Each of the six power semiconductor devices is a power semiconductor device 1U of the U-phase upper arm.
1. Power semiconductor element 1U2 of U-phase lower arm, power semiconductor element 1V1 of V-phase upper arm, power semiconductor element 1V2 of V-phase lower arm, power semiconductor element 1 of W-phase upper arm
The power semiconductor element 1W2 of the W1 and W phase lower arms is used. The thermoelectric modules 7 attached to these power semiconductor elements 1 are the thermoelectric modules 7 of the U-phase upper arm, respectively.
U1, U-phase lower arm thermoelectric module 7U2, V-phase upper arm thermoelectric module 7V1, V-phase lower arm thermoelectric module 7V2, W-phase upper arm thermoelectric module 7W1,
The thermoelectric module 7W2 of the W-phase lower arm is used. In the inverter circuit having such a configuration, the power semiconductor element was energized as follows. When operating at a frequency of 16.7 Hz, the power semiconductor elements that are turned on at the same time every 0.01 seconds are as follows: 1U1, 1V2, 1W1, 1U1, 1V2, 1W2, 1U1, 1V1, 1W
2, 1U2.1V1 1W2, 1U2.1V1.1
The state is sequentially switched to W1, 1U2, 1V2, 1W1. For this reason, in each state, the thermoelectric module that is energized has 7U1, 7V2, 7W1 every 0.01 seconds.
From the state of 7U1.7V2 / 7W2, 7U1.7V
1.7W2, 7U2, 7V1, 7W2, 7U2.7
It was set to V1 · 7W1 and 7U2 · 7V2 · 7W1. In this way, according to the switching of the power semiconductor device 1,
The thermoelectric module 7 was energized and cooled. As a result, the temperature rise of the power semiconductor element 1 can be suppressed to a low level, and the temperature of each element can be made uniform.
For this reason, it is possible to reduce variations in life due to thermal destruction of the power semiconductor element 1 which is affected by the element arrangement. The six thermoelectric modules 7 can be energized at the same time, or the six thermoelectric modules 7 can be energized and cooled by individually changing the current values. According to this embodiment, in a power module including a plurality of power semiconductor elements, a heat radiation base, an output terminal, and a control terminal, a thermoelectric semiconductor element for thermoelectric conversion is insulated at a position close to or close to the lower surface of the power semiconductor element. A thermoelectric module provided with a substrate is individually arranged on the power semiconductor element, and the thermoelectric module is individually conducted and cooled in accordance with a temperature rise due to energization of the semiconductor module, so that the power semiconductor elements of the power module generate heat. It is possible to provide a highly reliable power module in which the power element is not destroyed by suppressing the generated temperature distribution and cooling the power semiconductor element uniformly.

A second embodiment of the present invention will be described with reference to FIG. In the figure, 7x and 7y are thermoelectric modules, which are composed of a thermoelectric semiconductor element 7a, an insulating substrate 7b, an insulating substrate 7c, and a terminal 7d. Thermoelectric module 7x
In, the N-type and P-type thermoelectric semiconductor elements 7a are arranged in order and sandwiched by the insulating substrate 7b and the insulating substrate 7c. Circuit wiring is provided on the lower surface of the insulating substrate 7b on the thermoelectric semiconductor element 7a side and the upper surface of the insulating substrate 7c so that a total of 64 thermoelectric semiconductor elements 7a connected in series are connected in 8 rows. The thermoelectric semiconductor element 7a, the insulating substrate 7b, and the insulating substrate 7c are fixed by soldering or the like. Terminal 7d
Has one end on the thermoelectric semiconductor element 7a on the insulating substrate 7c.
Are connected to the start and end points of the connected circuit wiring.
On the other hand, in the thermoelectric module 7y, the N-type and P-type thermoelectric semiconductor elements 7a are arranged in order and the insulating substrate 7b and the insulating substrate 7 are arranged.
It is sandwiched by c. Circuit wiring is provided on the lower surface of the insulating substrate 7b on the thermoelectric semiconductor element 7a side and the upper surface of the insulating substrate 7c so that a total of 36 thermoelectric semiconductor elements 7a connected in series are connected in 6 rows. The thermoelectric semiconductor element 7a, the insulating substrate 7b, and the insulating substrate 7c are fixed by soldering or the like. One end of the terminal 7d is the insulating substrate 7
The thermoelectric semiconductor element 7a on c is connected to the start point and the end point of the connected circuit wiring. In the power module shown in the figure, the thermoelectric module 7x in which the number of thermoelectric semiconductor elements 7a mounted is different
1 and two thermoelectric modules 7y are mounted on the heat dissipation base 6 by soldering or the like.

Next, a method of cooling a power module in which one thermoelectric module 7x and two thermoelectric modules 7y are mounted together will be described. When the power semiconductor elements 1 at both ends of the figure are simultaneously turned on,
The power semiconductor elements 1 at both ends are simultaneously turned on
When FF is performed, the power semiconductor element 1 in the center is turned on. The conventional power semiconductor device 1, the control terminal 4, and the output terminal 5 are mounted on the insulated circuit board 2 by soldering, and the power semiconductor device 1, the control terminal 4, and the output terminal 5 are electrically connected by the aluminum wire 3. In the case of the power module solder-mounted on the heat dissipation base 6, the temperature of the center part of the heat dissipation base 6 is higher than that of both ends due to heat generation due to repeated switching of the power semiconductor elements 1 at both ends and the power semiconductor element 1 at the center. As a result, the temperature of the central power semiconductor element 1 at the time of ON becomes higher than the temperature of the power semiconductor elements 1 at both ends, and the central power semiconductor element is preferentially thermally destroyed. In the present invention, the power semiconductor element 1 at the center is attached to the thermoelectric module 7x having 64 thermoelectric semiconductor elements 7a mounted, and the power semiconductor element 1 at both ends is attached to the thermoelectric module 7y having 36 thermoelectric semiconductor elements 7a mounted. There is. Thermoelectric module 7x
And the thermoelectric module 7y with the same current constantly flowing,
When the power semiconductors are switched, the thermoelectric module 7x attached to the central power semiconductor element 1 has more thermoelectric semiconductor elements than the thermoelectric modules 7y attached to the power semiconductor elements 1 at both ends. Therefore, the thermoelectric module 7x is attached to the thermoelectric module 7x. It was possible to cool the power semiconductor element 1 so that the temperature of the power semiconductor element 1 was the same as that of the power semiconductor elements 1 located at both ends. It should be noted that a current value flowing through the thermoelectric module 7x located in the central portion may be larger than a current value flowing through the thermoelectric modules 7y located at both ends. In this case, the temperature of the power semiconductor element 1 in the central portion should be further lowered. You can also Moreover, you may change the electric current value sent to the thermoelectric module 7x and the thermoelectric module 7y individually.

According to this embodiment, in the thermoelectric module of the power module according to claim 1, by disposing thermoelectric modules having different numbers of mounted thermoelectric semiconductor elements individually in the power semiconductor element, the power module It is possible to provide a highly reliable power module which suppresses the temperature distribution caused by the heat generation of the plurality of power semiconductor elements and uniformly cools the power semiconductor elements without damaging the power elements.

A third embodiment of the present invention will be described with reference to FIGS. 4 and 5. FIG. 4 is a side sectional view of a power module showing a third embodiment of the present invention. Figure 4
In the figure, 7 is a thermoelectric module, which comprises a thermoelectric semiconductor element 7a, an insulating substrate 7b, an insulating substrate 7c, and a terminal 7d. In the thermoelectric module 7, N-type and P-type thermoelectric semiconductor elements 7a are arranged in order and sandwiched by an insulating substrate 7b and an insulating substrate 7c. Circuit wiring is provided on the lower surface of the insulating substrate 7b on the thermoelectric semiconductor element 7a side and the upper surface of the insulating substrate 7c so that the thermoelectric semiconductor elements 7a are connected in series, and the thermoelectric semiconductor element 7a and the insulating substrate 7b are connected. The insulating substrate 7c is fixed by solder or the like. One end of the terminal 7d is connected to the start point and the end point of the circuit wiring to which the thermoelectric semiconductor element 7a on the insulating substrate 7c is connected. Circuit wiring 8 is provided on the upper surface of the insulating substrate 7b so that a power source and a load are connected via the power semiconductor element 1 and the output terminal 5, and the power semiconductor element 1, the control terminal 4 and the output terminal 5 are fixed. Has been done. The insulating substrate 7c is fixed to the heat dissipation plate 1 by soldering or the like.

Next, the thermoelectric module 7 in which the element arrangement of the thermoelectric semiconductor element 7a is divided into regions will be described with reference to FIG. FIG. 5 shows that the thermoelectric semiconductor elements are arranged by dividing the inside of the thermoelectric module 7 when six power semiconductor elements 1 are mounted into six regions. In this thermoelectric module 7, the thermoelectric semiconductor elements 7a are arranged to have the same size and arrangement interval, and a total of 30 elements of 6 rows and 5 columns are arranged in the same manner as the region 7x in which 72 elements of 8 rows and 9 columns are arranged. Two types of regions 7y were prepared. 7y was wired and two of them were connected in series were arranged at both ends of the thermoelectric module 7, and two 7x were connected in series at the center. This thermoelectric module 7
Then, in synchronization with the switching of the power semiconductor element 1, the terminals 7d are individually energized in the coupled 7x and 7y regions to control the cooling. As a result, 7x and 7
The temperature rise of the power semiconductor element 1 in the y region can be individually suppressed low, and the temperature of each element can be made uniform. For this reason, it is possible to reduce variations in life due to thermal destruction of the power semiconductor element 1 which is affected by the element arrangement. It is also possible to change the energization value in the 7x and 7y regions for cooling. Further, as shown in FIG. 6, all the regions 7x and 7y can be connected by wiring to control the cooling by the two terminals 7d. In this case, the cooling capacity increases in proportion to the number of mounted 7x and 7y elements, so in the thermoelectric module 7, the temperature of the power semiconductor element in the central part of the module becomes high, so that 7x is set in the central region. I placed it. According to this embodiment, in a power module including a plurality of power semiconductor elements, a heat radiation base, an output terminal, and a control terminal, a thermoelectric semiconductor element for thermoelectric conversion is insulated at a position close to or close to the lower surface of the power semiconductor element. It is a cooling structure for a power module, characterized in that a thermoelectric module arranged in a plurality of regions is mounted on a substrate, wherein the thermoelectric module of the power module according to claim 1 has a plurality of thermoelectric semiconductor elements arranged therein. A cooling structure of a power module, wherein regions are individually arranged in the power semiconductor element. In addition, since the plurality of regions in which the thermoelectric semiconductor elements are arranged are coupled by wiring and each coupled region is individually cooled, the temperature distribution generated by the heat generation of the plurality of power semiconductor elements of the power module is suppressed, and the power semiconductor It is possible to provide a highly reliable power module that does not damage the power element by uniformly cooling the element.

A fourth embodiment of the present invention will be described with reference to FIGS. 7 and 8. In FIG. 7 and FIG. 8, the thermoelectric semiconductor element is arranged by dividing the inside of the thermoelectric module 7 when six power semiconductor elements 1 are mounted into six regions. In this thermoelectric module 7, the size of the thermoelectric semiconductor elements 7a and the arrangement interval are set to the same size, and a total of 7 rows and 9 columns.
Two types were prepared: a region 7x in which two elements are arranged and a region 7m in which a total of 30 elements in 6 rows and 5 columns are arranged with a gap twice as large as that of the thermoelectric semiconductor element 7a. The two 7m connected in series are arranged at both ends of the thermoelectric module 7,
In the center, two 7x are connected in series. In this thermoelectric module 7, in synchronization with the switching of the power semiconductor element 1, the terminals 7d were individually energized to the thermoelectric modules in the areas 7x and 7m, respectively, to control the cooling. As a result, the temperature rise of the power semiconductor element 1 can be suppressed low in each region, and the temperature of each element can be made uniform. For this reason, it is possible to reduce variations in life due to thermal destruction of the power semiconductor element 1 which is affected by the element arrangement. Also, 7x and 7m
It is also possible to control the cooling by changing the energization value in the area.

A fifth embodiment of the present invention will be described with reference to FIGS. 9 and 10. In FIG. 9 and FIG. 10, the thermoelectric semiconductor elements are arranged by dividing the inside of the thermoelectric module 7 when six power semiconductor elements 1 are mounted into six regions. The thermoelectric module 7 includes a thermoelectric semiconductor element 7
An area 7x in which 72 elements are arranged in 8 rows and 9 columns and a total of 3 rows in 6 rows and 5 columns are arranged with the same size of a and the arrangement interval.
Twelve thermoelectric semiconductor elements 7a having 0 elements at the center are arrayed with the same element size and arrangement interval, and the surrounding 18
A region 7n in which the distance between the thermoelectric semiconductor device 7a and the thermoelectric semiconductor device 7a is twice.
I created two types. Two 7n connected in series are arranged at both ends of the thermoelectric module 7, and 7n in the center.
A combination of two x's connected in series was arranged. In this thermoelectric module 7, in synchronization with the switching of the power semiconductor element 1, the thermoelectric modules in the areas 7x and 7n were individually energized to the terminals 7d to control the cooling. As a result, the temperature rise of the power semiconductor element 1 can be suppressed low in each region, and the temperature of each element can be made uniform. For this reason, it is possible to reduce variations in life due to thermal destruction of the power semiconductor element 1 which is affected by the element arrangement. Further, it is also possible to change the energization values in the 7x and 7n regions for cooling. According to this embodiment,
In a power module including a plurality of power semiconductor elements, a heat dissipation base, an output terminal and a control terminal, a thermoelectric semiconductor element for thermoelectric conversion is divided into a plurality of regions on an insulating substrate at a position in close contact with or close to the lower surface of the power semiconductor element. Is a cooling structure of a power module, characterized in that the thermoelectric modules arranged in a plurality are arranged, and the number of mounted elements and the arrangement interval of the elements are changed for each of a plurality of regions in which the thermoelectric semiconductor elements are arranged. It is a cooling structure of the power module. In addition, since the plurality of regions in which the thermoelectric semiconductor elements are arranged are coupled by wiring and each coupled region is individually cooled, the temperature distribution generated by the heat generation of the plurality of power semiconductor elements of the power module is suppressed, and the power semiconductor It is possible to provide a highly reliable power module that does not damage the power element by uniformly cooling the element.

FIG. 11 shows the sixth embodiment of the present invention.
Will be described with reference to FIG. 11 and 12, the thermoelectric semiconductor element is arranged by dividing the inside of the thermoelectric module 7 when six power semiconductor elements 1 are mounted into six regions. In this thermoelectric module 7, the thermoelectric semiconductor elements 7a are arranged in the same size and arrangement interval as 8 rows and 8 rows.
Two types of regions 7o were prepared in which a region 7o having a total of 64 elements arranged in a column and a total of 36 thermoelectric semiconductor devices 7a having a total of 6 rows and 6 columns were arranged with the same size and arrangement interval. Four 7p were arranged at both ends of the thermoelectric module 7 and terminals 7d were provided on each of them. Further, two 7o are arranged in the center and a terminal 7d is provided for each. This thermoelectric module 7
Then, in synchronization with the switching of the power semiconductor element 1, the terminals 7d of 4 regions of 7p and 2 regions of 7o are respectively formed.
Was individually energized to control cooling. As a result, the temperature rise of the power semiconductor element 1 can be suppressed low in all six elements and regions, and the temperature of each element can be made uniform. For this reason, it is possible to reduce variations in life due to thermal destruction of the power semiconductor element 1 which is affected by the element arrangement. It is also possible to change the energization value in the areas 7p and 7o for cooling. According to this embodiment, in a power module including a plurality of power semiconductor elements, a heat dissipation base, an output terminal, and a control terminal, at a position close to or close to the lower surface of the power semiconductor element,
2. A cooling structure for a power module, comprising: a thermoelectric module having a thermoelectric semiconductor element for thermoelectric conversion divided into a plurality of regions on an insulating substrate.
The thermoelectric module of the power module described above is a cooling structure for a power module, wherein a plurality of regions in which the thermoelectric semiconductor elements are arranged are individually arranged in the power semiconductor element. Further, the plurality of regions in which the thermoelectric semiconductor elements are arranged are energized to individually cool the power semiconductor elements, so that the temperature distribution caused by the heat generation of the plurality of power semiconductor elements of the power module is suppressed,
It is possible to provide a highly reliable power module that does not destroy the power element by uniformly cooling the power semiconductor element.

[0016]

As described above, according to the present invention, in a power module comprising a plurality of power semiconductor elements, a heat dissipation base, an output terminal and a control terminal, thermoelectric conversion is performed at a position close to or close to the lower surface of the power semiconductor element. A thermoelectric module having an insulating substrate provided on the thermoelectric semiconductor element is individually arranged on the power semiconductor element, and thermoelectric modules having different numbers of mounted thermoelectric semiconductor elements are individually arranged on the power semiconductor element. Are arranged in a plurality of regions on an insulating substrate, the plurality of regions are individually arranged for each of the power semiconductor elements, and the number of mounted elements and / or elements for each of the plurality of areas where thermoelectric semiconductor elements are arranged. By changing the arrangement interval of the power semiconductor elements, the temperature distribution caused by the heat generation of the plurality of power semiconductor elements is suppressed, and the power semiconductor elements are evenly distributed. Not destroy the power element by cooling to be a highly reliable power module. Further, since it is not necessary to energize the power semiconductor element that does not generate heat, it is possible to suppress power consumption.

[Brief description of drawings]

FIG. 1 is a side sectional view of a power module showing a first embodiment of the present invention.

FIG. 2 is a perspective view of the power module shown in FIG.

FIG. 3 is a side sectional view showing a power module according to a second embodiment of the present invention.

FIG. 4 is a side sectional view showing a power module according to a third embodiment of the present invention.

FIG. 5 is a wiring diagram of a thermoelectric semiconductor element according to a third embodiment of the present invention.

FIG. 6 is a wiring diagram of a thermoelectric semiconductor element according to a third embodiment of the present invention.

FIG. 7 is a side sectional view showing a power module according to a fourth embodiment of the present invention.

FIG. 8 is a wiring diagram of a thermoelectric semiconductor element according to a fourth embodiment of the present invention.

FIG. 9 is a side sectional view showing a power module according to a fifth embodiment of the present invention.

FIG. 10 is a wiring diagram of a thermoelectric semiconductor element according to a fifth embodiment of the present invention.

FIG. 11 is a side sectional view showing a power module according to a sixth embodiment of the present invention.

FIG. 12 is a wiring diagram of a thermoelectric semiconductor element according to a sixth embodiment of the present invention.

FIG. 13 is a side sectional view showing a conventional apparatus.

[Explanation of symbols]

1: Power semiconductor element 1U1 U-phase upper arm power semiconductor device 1U2 U phase lower arm power semiconductor device 1V1 V phase upper arm power semiconductor device 1V2 V phase lower arm power semiconductor device 1W1 W phase upper arm power semiconductor device 1W2 W phase lower arm power semiconductor device 2: Insulated circuit board 3: Aluminum wire 4: Control terminal 5: Output terminal 6: Heat dissipation base 7: Thermoelectric module 7a Thermoelectric semiconductor element 7b insulating substrate 7c insulating substrate 7d terminal Area of 7m thermoelectric element 7n Thermoelectric element area 7o Area of thermoelectric element Area of 7p thermoelectric element Area of 7x thermoelectric elements 7y Thermoelectric element area 7U1 U-phase upper arm thermoelectric module 7U2 U-phase lower arm thermoelectric module 7V1 V-phase upper arm thermoelectric module 7V2 V phase lower arm thermoelectric module 7W1 W phase upper arm thermoelectric module 7W2 W phase lower arm thermoelectric module

   ─────────────────────────────────────────────────── ─── Continued front page    (72) Inventor Yuji Ishida             2-1, Kurosaki Shiroishi, Hachiman Nishi-ku, Kitakyushu City, Fukuoka Prefecture               Yasukawa Electric Co., Ltd. F-term (reference) 5F036 AA01 BA33

Claims (8)

[Claims] 1. A power module having a plurality of power semiconductor elements, a heat radiation base, an output terminal and a control terminal, wherein a thermoelectric module in which an insulating substrate is provided on a thermoelectric semiconductor element for thermoelectric conversion is adhered to a lower surface of the power semiconductor element or A power module with a cooling mechanism, characterized in that the power semiconductor elements are arranged in close proximity to each other. 2. The power module with a cooling mechanism according to claim 1, wherein thermoelectric modules having different numbers of mounted thermoelectric semiconductor elements are individually arranged in the power semiconductor elements. 3. A power module comprising a plurality of power semiconductor elements, a heat dissipation base, an output terminal and a control terminal, wherein the thermoelectric module in which thermoelectric semiconductor elements for thermoelectric conversion are arranged in a plurality of regions on an insulating substrate. A power module with a cooling mechanism, characterized in that the power module is attached to the lower surface of the element or in a position close to the element. 4. The power module with a cooling mechanism according to claim 3, wherein a plurality of regions in which the thermoelectric semiconductor elements are arranged are individually arranged for each of the power semiconductor elements. 5. The power module according to claim 3, wherein the number of mounted elements and / or the arrangement intervals of the elements are changed for each of a plurality of regions in which the thermoelectric semiconductor elements are arranged. Power module. 6. The cooling method for a power module according to claim 1, wherein the plurality of thermoelectric modules of the power semiconductor are individually conducted and cooled. 7. The cooling of the power module according to claim 3, wherein a plurality of regions in which the thermoelectric semiconductor elements are arranged are connected by wiring, and each of the connected regions is individually energized. A method for cooling a power module, which comprises cooling. 8. The cooling method for a power module according to claim 4, wherein the plurality of regions in which the thermoelectric semiconductor elements are arranged are energized to individually cool the power semiconductor elements. .