JP2003179203A - Circuit for driving power semiconductor module and method of constituting the same - Google Patents

Circuit for driving power semiconductor module and method of constituting the same

Info

Publication number
JP2003179203A
JP2003179203A JP2001376960A JP2001376960A JP2003179203A JP 2003179203 A JP2003179203 A JP 2003179203A JP 2001376960 A JP2001376960 A JP 2001376960A JP 2001376960 A JP2001376960 A JP 2001376960A JP 2003179203 A JP2003179203 A JP 2003179203A
Authority
JP
Japan
Prior art keywords
circuit
power semiconductor
module
semiconductor element
drive circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001376960A
Other languages
Japanese (ja)
Inventor
Akitake Takizawa
聡毅 滝沢
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP2001376960A priority Critical patent/JP2003179203A/en
Publication of JP2003179203A publication Critical patent/JP2003179203A/en
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49175—Parallel arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/30107—Inductance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding

Landscapes

  • Power Conversion In General (AREA)
  • Inverter Devices (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To contrive the constitution of a drive circuit and a control circuit for a power semiconductor element such as an IGBT or the like, to make the circuits resistant to noise and to enhance reliabilities of the circuits. <P>SOLUTION: The power semiconductor element such as the IGBT or the like used for a power conversion circuit and a diode to be antiparallel-connected to the element are used as an arm unit, and the circuits formed on a printed board in order to drive and control the power semiconductor element are installed with reference to a molded one-phase-portion or multiphase-portion module. In conventional cases, the circuits are installed so as to be overlapped with (parallel to) the element module, a current route flowing in an interconnection or the like inside the element module and a current route flowing in interconnections of the drive circuit and the control circuit are made parallel to each other so as to be electromagnetically coupled, and an induced voltage is generated so as to become a noise source. The drive circuit 21 and the control circuit 22 are installed and constituted so as to be perpendicular to the element module, the element module is hard to electromagnetically couple, and the reliability of the element module is ensured. <P>COPYRIGHT: (C)2003,JPO

Description

【発明の詳細な説明】Detailed Description of the Invention

【０００１】[0001]

【発明の属する技術分野】この発明は、電力半導体素子
モジュールを駆動，制御するための駆動用回路とその構
成方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a driving circuit for driving and controlling a power semiconductor device module and a method of configuring the driving circuit.

【０００２】[0002]

【従来の技術】図２にインバータ回路例を示す。符号１
は直流電源（直流回路）、２はモータ等の負荷、３は電
力半導体素子からなるインバータを示す。このインバー
タは例えばＩＧＢＴ等の電力半導体素子４、これと逆並
列に接続されたダイオード５、およびＩＧＢＴ４を駆
動，制御するゲート駆動回路６から構成される。電力半
導体素子モジュールは通常、上下アーム２素子分を１組
とするか、または６素子分を１組としており、インバー
タ構成とするときは通常２素子構成のモジュールを３並
列接続するか、または６素子構成のものをそのまま用い
ている（図２は６素子構成のものを示す）。2. Description of the Related Art FIG. 2 shows an example of an inverter circuit. Code 1
Is a DC power supply (DC circuit), 2 is a load such as a motor, and 3 is an inverter composed of a power semiconductor element. This inverter is composed of, for example, a power semiconductor element 4 such as an IGBT, a diode 5 connected in antiparallel with the power semiconductor element 4, and a gate drive circuit 6 for driving and controlling the IGBT 4. The power semiconductor device module usually has two upper and lower arms for one set, or six sets for one set, and when an inverter configuration is used, normally two-element configuration modules are connected in parallel in three or six. The element structure is used as it is (FIG. 2 shows the 6 element structure).

【０００３】図３はモジュール外形図、図４はモジュー
ル内部配置図、図５は図４のモジュールの等価回路図で
ある。FIG. 3 is an external view of the module, FIG. 4 is an internal layout of the module, and FIG. 5 is an equivalent circuit diagram of the module of FIG.

【０００４】図３に示すように、正側（Ｐ）および負側
（Ｎ）の直流端子７，８がモジュールの一辺側（図の上
側）に、出力端子（Ｕ端子）９がその対辺側（図の下
側）に配置され、これによって直流電源または直流回路
との配線を容易、かつ低インダクタンスにて接続できる
ようにしている。なお、１０，１１は電力半導体素子の
ゲート端子を示す。As shown in FIG. 3, the positive side (P) and negative side (N) DC terminals 7 and 8 are on one side of the module (upper side in the figure), and the output terminal (U terminal) 9 is on the opposite side thereof. It is arranged (on the lower side of the drawing), so that the wiring with the DC power supply or the DC circuit can be easily connected with low inductance. In addition, 10 and 11 show the gate terminals of the power semiconductor device.

【０００５】また、図４，図５の符号１２は上アーム側
のＩＧＢＴチップ、１３は下アーム側のＩＧＢＴチッ
プ、１４は上アーム側のダイオードチップ、１５は下ア
ーム側のダイオードチップ、１６，１７，１８は各電極
とＩＧＢＴチップ間を接続する銅パターン配線である。
なお、図５の符号１９はＩＧＢＴチップと銅パターンを
結線するワイヤである。4 and 5, reference numeral 12 is an upper arm IGBT chip, 13 is a lower arm IGBT chip, 14 is an upper arm diode chip, 15 is a lower arm diode chip, 16, Reference numerals 17 and 18 denote copper pattern wirings that connect each electrode and the IGBT chip.
Reference numeral 19 in FIG. 5 is a wire connecting the IGBT chip and the copper pattern.

【０００６】図４に示すようなモジュールの内部に流れ
る電流は、ＰからＵ、ＵからＰ、ＮからＵ、ＵからＮの
４通りで流れるので、図４では概略上から下、または下
から上に向けて流れることになる。The current flowing inside the module as shown in FIG. 4 flows in four ways from P to U, U to P, N to U, and U to N. Therefore, in FIG. It will flow upwards.

【０００７】一方、装置の小型化を図るため、上記のよ
うなモジュールを用い、ＩＧＢＴのゲート駆動回路など
を搭載したプリント基板をその上に設置する場合、通常
は図６のように、プリント基板２０が電力半導体素子モ
ジュールに重なる（または平行となる）ように設置する
のが普通である。On the other hand, in order to miniaturize the device, when the above-mentioned module is used and a printed circuit board on which an IGBT gate drive circuit or the like is mounted is installed on the printed circuit board, normally, as shown in FIG. It is usual that 20 is installed so as to overlap (or be parallel to) the power semiconductor device module.

【０００８】[0008]

【発明が解決しようとする課題】ところが図６のように
すると、プリント基板２０内のパターンや部品類が、モ
ジュール内の銅パターンや半導体チップを流れる電流径
路と平行となるケースが発生する。そうすると、両配線
間の電磁結合によってモジュール内を流れる電流にて発
生する磁界により、プリント基板２０内のパターンに誘
起電圧が発生するが、この電圧がノイズ源となり、誤動
作の原因ともなる。However, in the case of FIG. 6, there are cases in which the patterns and components in the printed circuit board 20 are parallel to the copper patterns in the module and the current paths flowing through the semiconductor chips. Then, an induced voltage is generated in the pattern in the printed board 20 due to the magnetic field generated by the current flowing in the module due to the electromagnetic coupling between the two wirings, but this voltage becomes a noise source and causes a malfunction.

【０００９】従来、このような現象を防止するため、電
磁シールドを施したり、駆動回路等をモジュールから遠
ざけて設置するなどしているが、コストアップや装置の
大型化を招くと言う問題が発生する。Conventionally, in order to prevent such a phenomenon, an electromagnetic shield is provided and a drive circuit and the like are installed away from the module. However, there arises a problem that the cost is increased and the size of the device is increased. To do.

【００１０】したがって、この発明の課題は、コストア
ップや装置の大型化を招くことなく、モジュールと駆動
回路等との間の電磁結合にて生じる誘起電圧を抑制する
ことにある。Therefore, an object of the present invention is to suppress the induced voltage generated by the electromagnetic coupling between the module and the drive circuit and the like without increasing the cost and increasing the size of the device.

【００１１】[0011]

【課題を解決するための手段】このような課題を解決す
るため、請求項１の発明では、電力変換回路に用いる電
力半導体素子とこれに逆並列接続されるダイオードを１
アームとして直列に接続し、モールド成型して１相分ま
たは多相分の電力変換器主回路を形成し、その正側およ
び負側の端子をモールド成型体の一方側に配置し、モー
ルド成型体の他方側に出力端子を配置してなる主回路モ
ジュールと、前記電力半導体素子を駆動しプリント基板
化されて前記主回路モジュール上に直立するように設置
した駆動回路とからなることを特徴とする。In order to solve such a problem, in the invention of claim 1, a power semiconductor element used in a power conversion circuit and a diode connected in antiparallel to the power semiconductor element are provided.
Connected in series as an arm and molded to form a one-phase or multi-phase power converter main circuit, and arrange its positive and negative terminals on one side of the molded body to form a molded body. A main circuit module having an output terminal arranged on the other side thereof, and a drive circuit which drives the power semiconductor element and is formed into a printed circuit board so as to stand upright on the main circuit module. .

【００１２】この請求項１の発明においては、前記主回
路モジュール上に、前記プリント基板化された駆動回路
を固定するための固定部材を設けることができる（請求
項２の発明）。According to the invention of claim 1, a fixing member for fixing the drive circuit formed into the printed circuit board can be provided on the main circuit module (invention of claim 2).

【００１３】電力変換回路に用いる電力半導体素子とこ
れに逆並列接続されるダイオードを１アームとして直列
に接続し、モールド成型して１相分または多相分の電力
変換器主回路を形成し、その正側および負側の端子をモ
ールド成型体の一方側に配置し、モールド成型体の他方
側に出力端子を配置してなる主回路モジュールに対し、
前記電力半導体素子を駆動しプリント基板化された駆動
回路を、前記主回路モジュール上に直立するように設置
して構成したことを特徴とする。A power semiconductor element used in a power conversion circuit and a diode connected in antiparallel to the power semiconductor element are connected in series as one arm and molded to form a power converter main circuit for one phase or for multiple phases. For the main circuit module, in which the positive and negative terminals are arranged on one side of the molded body and the output terminals are arranged on the other side of the molded body,
A drive circuit that drives the power semiconductor element and is formed into a printed circuit board is installed so as to stand upright on the main circuit module.

【００１４】この請求項３の発明においては、前記主回
路モジュール上に、前記プリント基板化された駆動回路
を固定するための固定部材を設けることができる（請求
項４の発明）。In the invention of claim 3, a fixing member for fixing the drive circuit formed into a printed circuit board can be provided on the main circuit module (invention of claim 4).

【００１５】すなわち、通常、主電流による磁界の影響
を受け易いゲート駆動回路または制御回路を、主回路モ
ジュールに対し垂直となるように設置することにより、
ゲート駆動回路内の各回路等と主電流の配線等との電磁
結合を抑制し、もって装置の信頼性を高めようとするも
のである。That is, by installing a gate drive circuit or a control circuit which is usually susceptible to a magnetic field due to a main current so as to be perpendicular to the main circuit module,
It is intended to suppress the electromagnetic coupling between each circuit and the like in the gate drive circuit and the wiring of the main current, thereby improving the reliability of the device.

【００１６】[0016]

【発明の実施の形態】図１はこの発明の実施の形態を示
す外観図である。1 is an external view showing an embodiment of the present invention.

【００１７】図示のように、ゲート駆動のための駆動回
路または制御回路を搭載したプリント基板２１，２２
（上アームＩＧＢＴ駆動用，下アームＩＧＢＴ駆動用）
を、モジュールに対して重ねる（または平行となる）よ
うに設置（構成）するのではなく、垂直となるように設
置した点が特徴である。なお、２３，２４は駆動回路ま
たは制御回路を固定するためのコネクタ、または補助基
板を示す。こうすることで、モジュール内を流れる主電
流径路に対し、プリント基板内のパターンも全て垂直方
向となり、電磁結合の度合いを従来のものに比し著しく
低減することが可能となる。As shown in the drawing, the printed circuit boards 21 and 22 mounted with a drive circuit or a control circuit for driving a gate.
(For driving upper arm IGBT, for driving lower arm IGBT)
Is not installed (configured) so as to be overlapped (or parallel) with the module, but is installed vertically. Reference numerals 23 and 24 denote connectors for fixing the drive circuit or the control circuit, or auxiliary boards. By doing so, all the patterns in the printed circuit board are also perpendicular to the main current path flowing in the module, and it is possible to significantly reduce the degree of electromagnetic coupling as compared with the conventional one.

【００１８】[0018]

【発明の効果】この発明によれば、ゲート駆動のための
駆動回路または制御回路を搭載したプリント基板を、電
力半導体素子モジュールに対して垂直となるように設置
することで、モジュール内を流れる電流により発生する
磁界による誤動作現象がなくなり、信頼性を高められる
という利点が得られる。According to the present invention, a printed circuit board on which a drive circuit or a control circuit for driving a gate is mounted is installed so as to be perpendicular to a power semiconductor element module, so that the current flowing in the module is increased. There is an advantage that the malfunction phenomenon due to the magnetic field generated by is eliminated and the reliability is enhanced.

【図面の簡単な説明】[Brief description of drawings]

【図１】この発明の実施の形態を示す外観図である。FIG. 1 is an external view showing an embodiment of the present invention.

【図２】一般的なインバータ回路を示す回路図である。FIG. 2 is a circuit diagram showing a general inverter circuit.

【図３】モジュール外形図である。FIG. 3 is a module outline drawing.

【図４】モジュール内部配置図である。FIG. 4 is an internal layout diagram of a module.

【図５】図４の等価回路図である。FIG. 5 is an equivalent circuit diagram of FIG.

【図６】モジュール上面に駆動，制御回路を設置した従
来例を示す構成図である。FIG. 6 is a configuration diagram showing a conventional example in which a drive / control circuit is installed on the upper surface of a module.

【符号の説明】[Explanation of symbols]

１…直流電源（直流回路）、２…負荷（モータ）、３…
インバータ部、４…半導体素子（ＩＧＢＴ）、５…ダイ
オード、６…ゲート駆動回路、７…正極端子（Ｐ）、８
…負極端子（Ｎ）、９…出力端子（Ｕ）、１０，１１…
ゲート端子、１２，１３…ＩＧＢＴチップ、１４，１５
…ダイオードチップ、１６，１７，１８…銅パターン配
線、１９…ワイヤ、２０，２１，２２…プリント基板、
２３，２４…コネクタ（補助基板）。1 ... DC power supply (DC circuit), 2 ... load (motor), 3 ...
Inverter section, 4 ... Semiconductor element (IGBT), 5 ... Diode, 6 ... Gate drive circuit, 7 ... Positive electrode terminal (P), 8
... Negative electrode terminal (N), 9 ... Output terminal (U), 10, 11 ...
Gate terminal, 12, 13 ... IGBT chip, 14, 15
... Diode chips, 16, 17, 18 ... Copper pattern wiring, 19 ... Wires, 20, 21, 22 ... Printed circuit boards,
23, 24 ... Connector (auxiliary board).

Claims (4)

【特許請求の範囲】[Claims] 【請求項１】 電力変換回路に用いる電力半導体素子と
これに逆並列接続されるダイオードを１アームとして直
列に接続し、モールド成型して１相分または多相分の電
力変換器主回路を形成し、その正側および負側の端子を
モールド成型体の一方側に配置し、モールド成型体の他
方側に出力端子を配置してなる主回路モジュールと、前
記電力半導体素子を駆動しプリント基板化されて前記主
回路モジュール上に直立するように設置した駆動回路と
からなることを特徴とする電力半導体素子モジュール駆
動用回路。1. A power semiconductor device used in a power conversion circuit and a diode connected in antiparallel to the power semiconductor device are connected in series as one arm and molded to form a power converter main circuit for one phase or for multiple phases. Then, the positive and negative terminals are arranged on one side of the molded body and the output terminal is arranged on the other side of the molded body, and the power semiconductor element is driven to form a printed circuit board. And a drive circuit installed so as to stand upright on the main circuit module. 【請求項２】 前記主回路モジュール上に、前記プリン
ト基板化された駆動回路を固定するための固定部材を設
けたことを特徴とする請求項１に記載の電力半導体素子
モジュール駆動用回路。2. The circuit for driving a power semiconductor element module according to claim 1, wherein a fixing member for fixing the drive circuit formed into a printed circuit board is provided on the main circuit module. 【請求項３】 電力変換回路に用いる電力半導体素子と
これに逆並列接続されるダイオードを１アームとして直
列に接続し、モールド成型して１相分または多相分の電
力変換器主回路を形成し、その正側および負側の端子を
モールド成型体の一方側に配置し、モールド成型体の他
方側に出力端子を配置してなる主回路モジュールに対
し、前記電力半導体素子を駆動しプリント基板化された
駆動回路を、前記主回路モジュール上に直立するように
設置して構成することを特徴とする電力半導体素子モジ
ュール駆動用回路の構成方法。3. A power semiconductor device used in a power conversion circuit and a diode connected in antiparallel to the power semiconductor device are connected in series as one arm and molded to form a power converter main circuit for one phase or for multiple phases. The positive and negative terminals are arranged on one side of the molded body and the output terminals are arranged on the other side of the molded body, and the power semiconductor element is driven to the printed circuit board. A method for configuring a circuit for driving a power semiconductor element module, characterized in that the integrated drive circuit is installed so as to stand upright on the main circuit module. 【請求項４】 前記主回路モジュール上に、前記プリン
ト基板化された駆動回路を固定するための固定部材を設
けることを特徴とする請求項３に記載の電力半導体素子
モジュール駆動用回路の構成方法。4. The method for configuring a circuit for driving a power semiconductor element module according to claim 3, wherein a fixing member for fixing the drive circuit formed into a printed circuit board is provided on the main circuit module. .
JP2001376960A 2001-12-11 2001-12-11 Circuit for driving power semiconductor module and method of constituting the same Pending JP2003179203A (en)

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Publication number Priority date Publication date Assignee Title
JP2006100327A (en) * 2004-09-28 2006-04-13 Mitsubishi Electric Corp Semiconductor device and its manufacturing process
KR101233317B1 (en) 2005-01-26 2013-02-14 삼성에스디아이 주식회사 Method of manufacturing electrode for fuel cell, and membrane-electrode assembly and fuel cell system comprising the electrode manufactured by the method
KR101321282B1 (en) 2011-06-17 2013-10-28 삼성전기주식회사 Power module package and system module having the same
CN104521127A (en) * 2012-08-10 2015-04-15 三菱电机株式会社 Power module comprising two elements, and three-level power conversion device using same
US10211118B2 (en) 2017-03-29 2019-02-19 Kabushiki Kaisha Toshiba Semiconductor module

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006100327A (en) * 2004-09-28 2006-04-13 Mitsubishi Electric Corp Semiconductor device and its manufacturing process
JP4583122B2 (en) * 2004-09-28 2010-11-17 三菱電機株式会社 Semiconductor device and manufacturing method thereof
KR101233317B1 (en) 2005-01-26 2013-02-14 삼성에스디아이 주식회사 Method of manufacturing electrode for fuel cell, and membrane-electrode assembly and fuel cell system comprising the electrode manufactured by the method
KR101321282B1 (en) 2011-06-17 2013-10-28 삼성전기주식회사 Power module package and system module having the same
US8941220B2 (en) 2011-06-17 2015-01-27 Samsung Electro-Mechanics Co., Ltd. Power module package and system module having the same
CN104521127A (en) * 2012-08-10 2015-04-15 三菱电机株式会社 Power module comprising two elements, and three-level power conversion device using same
JP5813234B2 (en) * 2012-08-10 2015-11-17 三菱電機株式会社 Two-element power module and three-level power converter using the same
EP2884650A4 (en) * 2012-08-10 2017-01-18 Mitsubishi Electric Corporation Power module comprising two elements, and three-level power conversion device using same
US10211118B2 (en) 2017-03-29 2019-02-19 Kabushiki Kaisha Toshiba Semiconductor module

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