JP2003179020A - Polishing cloth texture transferring prevention method - Google Patents
Polishing cloth texture transferring prevention methodInfo
- Publication number
- JP2003179020A JP2003179020A JP2001379120A JP2001379120A JP2003179020A JP 2003179020 A JP2003179020 A JP 2003179020A JP 2001379120 A JP2001379120 A JP 2001379120A JP 2001379120 A JP2001379120 A JP 2001379120A JP 2003179020 A JP2003179020 A JP 2003179020A
- Authority
- JP
- Japan
- Prior art keywords
- polishing
- polishing cloth
- cloth
- texture
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Grinding-Machine Dressing And Accessory Apparatuses (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】この発明は研磨布テクスチャ
の転写防止方法、詳しくは半導体ウェーハの研磨面に対
する研磨布の繊維縞であるテクスチャの転写を防ぐ研磨
布テクスチャの転写防止方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for preventing transfer of a polishing cloth texture, and more particularly to a method for preventing transfer of a polishing cloth texture which prevents transfer of a texture, which is a fiber stripe of the polishing cloth, to a polishing surface of a semiconductor wafer.
【０００２】[0002]
【従来の技術】シリコンウェーハの研磨は、研磨装置に
より行われる。研磨装置は、上面に研磨布が展張された
研磨定盤と、この研磨定盤の上方に対向配置され、下面
にシリコンウェーハが展張される研磨ヘッドとを備えて
いる。研磨ヘッドの下面には、シリコンウェーハの直径
より若干大径な孔部を内側に有する環状のテンプレート
が固着され、この孔部内にバックパッドが収納される。
研磨時には、まずバックパッドの発泡層（ナップ部）と
シリコンウェーハの裏面とに純水を供給し、その純水の
表面張力によってシリコンウェーハをハンドリングす
る。その後、研磨布の中央部上にアルカリ性エッチング
液を含む研磨剤（スラリー）を供給しながら、シリコン
ウェーハを研磨布の表面（研磨面）に、所定の相対回転
速度および所定の研磨圧で摺接させ、シリコンウェーハ
の表面を研磨する。研磨されたシリコンウェーハには、
次に洗浄が施される。研磨後の洗浄の一種として、“水
研磨”と呼ばれる方法が知られている。これは、研磨剤
に代えて超純水を研磨布上に供給しながら、研磨装置を
運転してシリコンウェーハの研磨面を洗浄（リンス）
し、ウェーハ研磨面の表面粗さを整えるものである。こ
れにより、研磨時にシリコンウェーハの研磨面に付着し
た研磨剤中の研磨砥粒（遊離砥粒）が洗い流される。2. Description of the Related Art A silicon wafer is polished by a polishing apparatus. The polishing apparatus includes a polishing platen having a polishing cloth stretched on its upper surface, and a polishing head arranged above the polishing platen so as to face it and having a silicon wafer spread on its lower surface. An annular template having a hole portion having a diameter slightly larger than the diameter of the silicon wafer inside is fixed to the lower surface of the polishing head, and the back pad is housed in the hole portion.
At the time of polishing, first, pure water is supplied to the foamed layer (nap portion) of the back pad and the back surface of the silicon wafer, and the silicon wafer is handled by the surface tension of the pure water. After that, while supplying the polishing agent (slurry) containing the alkaline etching solution onto the central portion of the polishing cloth, the silicon wafer is brought into sliding contact with the surface (polishing surface) of the polishing cloth at a predetermined relative rotation speed and a predetermined polishing pressure. Then, the surface of the silicon wafer is polished. For polished silicon wafers,
Next, washing is performed. A method called "water polishing" is known as a type of cleaning after polishing. This is to clean the polishing surface of the silicon wafer by operating the polishing device while supplying ultrapure water on the polishing cloth instead of the polishing agent (rinsing).
However, the surface roughness of the polished surface of the wafer is adjusted. As a result, the polishing abrasive grains (free abrasive grains) in the polishing agent adhered to the polishing surface of the silicon wafer during polishing are washed away.
【０００３】ところで、従来、回転中の研磨布およびま
たはシリコンウェーハが停止して研磨が終了する際、研
磨布のテクスチャが、シリコンウェーハの研磨面にグリ
ッドパターンとして転写される場合があった。テクスチ
ャは、研磨が終了して研磨定盤の回転が停止したとき、
研磨布にしみ込んだ研磨剤中のアルカリ性エッチング液
が、ウェーハの研磨面をエッチングして発生すると考え
られる。このテクスチャにより、ウェーハの研磨面の平
坦度が低下するおそれがあった。そこで、これを解消す
る従来技術として、例えば(1) シリコンウェーハの研磨
面を洗浄する際、多量の超純水を研磨布に供給し、この
研磨布にしみ込んだアルカリ性エッチング液の濃度を低
下させる方法が知られている。そのほか、(2) 研磨装置
を運転しながらウェーハの研磨面を洗浄する際、超純水
中にクエン酸などの酸を高濃度（０．０１〜１０重量
％）で添加し、アルカリ性エッチング液を中和する方法
が知られている。By the way, conventionally, when the rotating polishing cloth and / or the silicon wafer is stopped and the polishing is completed, the texture of the polishing cloth may be transferred as a grid pattern to the polishing surface of the silicon wafer. As for the texture, when polishing is finished and the rotation of the polishing platen stops,
It is considered that the alkaline etching solution in the polishing agent that has penetrated into the polishing cloth etches the polishing surface of the wafer to generate it. This texture may reduce the flatness of the polished surface of the wafer. Therefore, as a conventional technique for solving this, for example, (1) when cleaning the polishing surface of a silicon wafer, a large amount of ultrapure water is supplied to the polishing cloth to reduce the concentration of the alkaline etching solution soaked in the polishing cloth. The method is known. In addition, (2) When cleaning the polished surface of the wafer while operating the polishing machine, add an acid such as citric acid to ultrapure water at a high concentration (0.01 to 10% by weight) to remove the alkaline etching solution. Methods of neutralization are known.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、これら
の従来の技術には、以下の欠点があった。すなわち、
(1) 多量の超純水を使ってシリコンウェーハの研磨面を
洗浄しても、例えば研磨布が厚い場合など、研磨布にし
み込んだアルカリ性エッチング液を十分に希釈すること
ができない場合があった。また、(2) 高濃度の酸性の洗
浄水でアルカリ性エッチング液を中和する方法では、研
磨布の表層のｐＨと、研磨布の内部のｐＨとに大きな差
が生じ、研磨布にしみ込んだ液体のｐＨが不安定になる
おそれがあった。しかも、研磨布に残った研磨砥粒が、
そのｐＨの急激な変化によって凝集することもあり、そ
のような場合にはウェーハの研磨面にキズがつくおそれ
があった。However, these conventional techniques have the following drawbacks. That is,
(1) Even if the polishing surface of a silicon wafer was washed with a large amount of ultrapure water, the alkaline etching solution that had soaked into the polishing cloth could not be sufficiently diluted, for example, when the polishing cloth was thick. . Further, (2) in the method of neutralizing the alkaline etching solution with high-concentration acidic washing water, a large difference occurs between the pH of the surface layer of the polishing cloth and the pH inside the polishing cloth, and the liquid soaked into the polishing cloth There was a risk that the pH of the product would become unstable. Moreover, the abrasive grains remaining on the polishing cloth
The abrupt change in pH may cause aggregation, and in such a case, the polished surface of the wafer may be scratched.
【０００５】そこで、発明者は、鋭意研究の結果、洗浄
後のシリコンウェーハの研磨面を、アルカリエッチによ
り浸食されやすいＳｉ面ではなく、アルカリエッチによ
り浸食されにくい面（例えばＳｉ酸化膜のＳｉＯ2 面な
ど）とすれば、シリコンウェーハの研磨面に対する研磨
布のテクスチャの転写を防ぐことを知見し、この発明を
完成させた。しかも、例えば研磨砥粒を含む研磨剤の場
合において、従来のような高濃度の酸性液を加えて研磨
布にしみ込んだ研磨剤を中和させる方法ではないので、
研磨布の全域でこの研磨布に含まれる液体のｐＨが安定
する。したがって、従来のように高濃度の酸化液の供給
によって研磨布に含まれる液体のｐＨが急激に変化し、
この研磨布に残った研磨砥粒が凝集してウェーハの研磨
面にキズがつくおそれが解消されることを知見し、この
発明を完成させた。Therefore, as a result of earnest research, the inventor has found that the polished surface of a silicon wafer after cleaning is not a Si surface that is easily eroded by alkali etching but a surface that is not easily eroded by alkali etching (for example, SiO 2 of a Si oxide film). Surface) and the like, it was found that the transfer of the texture of the polishing cloth to the polishing surface of the silicon wafer is prevented, and the present invention was completed. Moreover, for example, in the case of an abrasive containing abrasive grains, it is not a conventional method of neutralizing the abrasive soaked into the polishing cloth by adding a high-concentration acidic liquid,
The pH of the liquid contained in the polishing cloth is stabilized in the entire area of the polishing cloth. Therefore, the pH of the liquid contained in the polishing cloth changes rapidly due to the supply of the high-concentration oxidizing liquid as in the conventional case,
The inventors have found that the possibility that the polishing abrasive particles remaining on the polishing cloth aggregate to cause scratches on the polishing surface of the wafer is eliminated, and the present invention has been completed.
【０００６】[0006]
【発明の目的】この発明は、半導体ウェーハの研磨面へ
の研磨布のテクスチャの転写を防止することができる研
磨布テクスチャの転写防止方法を提供することを、その
目的としている。SUMMARY OF THE INVENTION An object of the present invention is to provide a method of preventing transfer of a polishing cloth texture to a polishing surface of a semiconductor wafer, which is capable of preventing transfer of the polishing cloth texture.
【０００７】[0007]
【課題を解決するための手段】請求項１に記載の発明
は、アルカリ性溶液を含む研磨剤を研磨布に供給しなが
ら、半導体ウェーハの研磨面を研磨布に押し付けて研磨
する工程と、研磨後、上記研磨剤に代えて、低濃度の過
酸化水素を含む洗浄水を研磨布上に供給しながら、半導
体ウェーハの研磨面を研磨布に押し付けて洗浄する工程
とを備えた研磨布テクスチャの転写防止方法である。半
導体ウェーハとしては、例えばシリコンウェーハ、ガリ
ウム砒素ウェーハなどが挙げられる。According to a first aspect of the present invention, there is provided a step of polishing a semiconductor wafer by pressing the polishing surface of the semiconductor wafer against the polishing cloth while supplying an abrasive containing an alkaline solution to the polishing cloth, and after polishing. A transfer of the polishing cloth texture, comprising a step of pressing the polishing surface of the semiconductor wafer against the polishing cloth while supplying cleaning water containing low-concentration hydrogen peroxide on the polishing cloth instead of the polishing agent. It is a prevention method. Examples of semiconductor wafers include silicon wafers and gallium arsenide wafers.
【０００８】半導体ウェーハは、少なくともデバイス形
成面となるウェーハの表面が研磨されていればよい。す
なわち、表裏両面を研磨したウェーハでもよい。表面だ
けが研磨された半導体ウェーハの製造時には、例えば片
面研磨装置が採用される。一方、両面研磨ウェーハの作
製時には、この片面研磨装置を採用してもよいし、遊星
歯車構造を有する両面研磨装置を採用してもよい。その
ほか、例えばキャリアプレートに形成された孔部内に半
導体ウェーハを挿入・保持し、研磨砥粒を含むスラリー
を半導体ウェーハに供給しながら、それぞれ研磨布が展
張され、かつ各回転軸を中心にして回転する上定盤およ
び下定盤の間で、キャリアプレートの表面と平行な面内
でこのキャリアプレートを運動させて、半導体ウェーハ
の表裏両面を同時に研磨するような両面研磨装置を用い
た半導体ウェーハの片面研磨でもよい。As for the semiconductor wafer, at least the surface of the wafer to be the device formation surface may be polished. That is, it may be a wafer having both front and back surfaces polished. When manufacturing a semiconductor wafer whose surface is polished, for example, a single-side polishing machine is adopted. On the other hand, when manufacturing a double-sided polished wafer, this single-sided polishing apparatus may be adopted, or a double-sided polishing apparatus having a planetary gear structure may be adopted. In addition, for example, while inserting and holding the semiconductor wafer in the hole formed in the carrier plate and supplying the slurry containing polishing abrasives to the semiconductor wafer, the polishing cloth is stretched and rotated about each rotation axis. One surface of a semiconductor wafer using a double-side polishing machine that simultaneously polishes the front and back surfaces of a semiconductor wafer by moving the carrier plate in a plane parallel to the surface of the carrier plate between the upper surface plate and the lower surface plate. It may be polished.
【０００９】この発明の研磨布テクスチャの転写防止方
法が適用されるのは、例えば半導体ウェーハの１次研磨
時でもよいし、仕上げ研磨時でもよい。研磨剤として
は、アルカリ性溶液に焼成シリカなどの研磨砥粒を添加
して混合したものを採用することができる。研磨布とし
ては、例えば不織布にウレタン樹脂を含浸・硬化させた
研磨布、そのほか不織布の基布の上にウレタン樹脂を発
泡させたスェードタイプの研磨布などが挙げられる。こ
こでいう低濃度の過酸化水素とは、０．０１〜５重量％
の過酸化水素をいう。０．０１重量％未満では、ウェー
ハ上にテクスチャの転写が生じるという不都合が生じ
る。また、５重量％を超えると、ウェーハの面荒れや研
磨布のライフが短くなるという不都合が生じる。研磨布
上への洗浄水の供給量は１〜１０リットル／分程度であ
る。洗浄液の温度は１０〜４０℃程度である。The method of preventing transfer of the polishing cloth texture of the present invention may be applied, for example, during primary polishing of a semiconductor wafer or during final polishing. As the polishing agent, it is possible to employ a mixture obtained by adding polishing abrasive grains such as calcined silica to an alkaline solution. Examples of the polishing cloth include a polishing cloth in which a nonwoven fabric is impregnated and cured with urethane resin, and a suede type polishing cloth in which a urethane resin is foamed on a nonwoven fabric base cloth. The low-concentration hydrogen peroxide referred to here is 0.01 to 5% by weight.
Of hydrogen peroxide. If it is less than 0.01% by weight, the disadvantage that the transfer of texture occurs on the wafer occurs. On the other hand, if it exceeds 5% by weight, the surface roughness of the wafer and the life of the polishing cloth are shortened. The amount of cleaning water supplied onto the polishing cloth is about 1 to 10 liters / minute. The temperature of the cleaning liquid is about 10 to 40 ° C.
【００１０】請求項２に記載の発明は、上記洗浄水中の
過酸化水素の濃度が、０．０１〜５重量％である請求項
１に記載の研磨布テクスチャの転写防止方法である。The invention according to claim 2 is the method for preventing transfer of a polishing cloth texture according to claim 1, wherein the concentration of hydrogen peroxide in the washing water is 0.01 to 5% by weight.
【００１１】請求項３に記載の発明は、アルカリ性溶液
を含む研磨剤を研磨布に供給しながら、半導体ウェーハ
の研磨面を研磨布に押し付けて研磨する工程と、研磨
後、上記研磨剤に代えて、高アルカリ度の洗浄水を研磨
布上に供給しながら、半導体ウェーハの研磨面を研磨布
に押し付けて洗浄する工程とを備えた研磨布テクスチャ
の転写防止方法である。アルカリ性を有する洗浄水とし
ては、有機アミン、ＮａＯＨ、ＫＯＨなどの水溶液が挙
げられる。アルカリ成分は、研磨剤中のアルカリ成分と
異なっていてもよいが、同じである方が好ましい。ここ
でいう高アルカリ度とは、ｐＨ８．５以上である。ｐＨ
８．５未満では、ウェーハ上にテクスチャが転写しやす
いという不都合が生じる。研磨布上へのアルカリ性の洗
浄水の供給量は０．１〜３０リットル／分、好ましくは
１〜２０リットル／分である。０．１リットル／分未満
では、洗浄液がウェーハ全面にゆきわたらずテクスチャ
が転写するという不都合が生じる。また、３０リットル
／分を超えると、排水量が多くなり不経済である。研磨
布上への洗浄水の供給量は１〜２０リットル／分程度で
ある。洗浄液の温度は１０〜４０℃程度である。According to a third aspect of the present invention, a step of pressing the polishing surface of the semiconductor wafer against the polishing cloth while polishing the polishing cloth while supplying the polishing agent containing the alkaline solution to the polishing cloth, and replacing the polishing agent after the polishing. And a method of pressing the polishing surface of the semiconductor wafer against the polishing cloth while supplying cleaning water having a high alkalinity onto the polishing cloth to clean the polishing cloth texture. Examples of the alkaline washing water include aqueous solutions of organic amine, NaOH, KOH and the like. The alkaline component may be different from the alkaline component in the polishing agent, but the same is preferable. The high alkalinity here means a pH of 8.5 or more. pH
If it is less than 8.5, there is a disadvantage that the texture is easily transferred onto the wafer. The amount of alkaline washing water supplied onto the polishing cloth is 0.1 to 30 liters / minute, preferably 1 to 20 liters / minute. If it is less than 0.1 liter / minute, the cleaning liquid does not spread over the entire surface of the wafer, and the texture is transferred. On the other hand, if it exceeds 30 liters / minute, the amount of drainage increases, which is uneconomical. The amount of washing water supplied to the polishing cloth is about 1 to 20 liters / minute. The temperature of the cleaning liquid is about 10 to 40 ° C.
【００１２】請求項４に記載の発明は、上記洗浄水のア
ルカリ度が、ｐＨ８．５〜ｐＨ１１．５である請求項３
に記載の研磨布テクスチャの転写防止方法である。好ま
しいアルカリ度は、ｐＨ９．５〜ｐＨ１１．５である。
ｐＨ１１．５を超えると、研磨布のライフが短くなると
いう不都合が生じる。In the invention according to claim 4, the alkalinity of the washing water is pH 8.5 to pH 11.5.
The method for preventing transfer of a polishing cloth texture according to 1. The preferred alkalinity is pH 9.5 to pH 11.5.
When the pH exceeds 11.5, the life of the polishing cloth becomes short, which is a disadvantage.
【００１３】[0013]
【作用】この発明によれば、研磨された半導体ウェーハ
は、その後、研磨剤に代えて低濃度の過酸化水素を含む
洗浄水を研磨布上に供給しながら、このウェーハの研磨
面を研磨布に押し付けた状態で洗浄される。このとき、
洗浄水中には濃度が低い過酸化水素が含まれている。そ
のため、過酸化水素によって半導体ウェーハの研磨面側
の浅い表層部分が酸化され、アルカリエッチでは浸食さ
れにくい酸化膜が形成される。その結果、洗浄後におい
て、半導体ウェーハの研磨面への研磨布のテクスチャの
転写を防止することができる。しかも、ここでは、従来
のように高濃度の酸性液を研磨布上に供給し、この研磨
布に含浸されたアルカリ性の研磨剤を中和するという方
法をとらないので、研磨布の表層に存在する液体のｐＨ
と、研磨布の内部に存在する液体のｐＨとの差が従来に
比べて小さくなる。これにより、研磨布の全域で、研磨
布に含まれる液体のｐＨが安定化する。しかも、研磨剤
に研磨砥粒を含むものを使用したとき、研磨布に残存し
た研磨砥粒が、高濃度の酸性液の供給によるｐＨの急激
な変化によって凝集し、このウェーハの研磨面をキズつ
けるというおそれも解消される。According to the present invention, the polished semiconductor wafer is processed by polishing the polishing surface of the wafer while supplying cleaning water containing low concentration hydrogen peroxide instead of the polishing agent onto the polishing cloth. It is washed while being pressed against. At this time,
Hydrogen peroxide having a low concentration is contained in the wash water. Therefore, the shallow surface layer portion on the polished surface side of the semiconductor wafer is oxidized by hydrogen peroxide, and an oxide film that is difficult to be eroded by alkali etching is formed. As a result, it is possible to prevent the texture of the polishing cloth from being transferred to the polishing surface of the semiconductor wafer after cleaning. Moreover, here, unlike the conventional method, a method of supplying a high-concentration acidic liquid onto the polishing cloth and neutralizing the alkaline abrasive impregnated in the polishing cloth is not used. Liquid pH
Then, the difference from the pH of the liquid existing inside the polishing cloth becomes smaller than in the conventional case. This stabilizes the pH of the liquid contained in the polishing cloth over the entire area of the polishing cloth. Moreover, when a polishing agent containing abrasive grains is used, the abrasive grains remaining on the polishing cloth aggregate due to a rapid change in pH due to the supply of a high-concentration acid solution, and the polished surface of this wafer is scratched. The fear of putting it on is also eliminated.
【００１４】特に、請求項３の発明によれば、研磨後、
研磨剤に代えて、高アルカリ度の洗浄水を研磨布に供給
しながら半導体ウェーハの研磨面を洗浄する。これによ
り、研磨剤に含まれるアルカリ成分によって溶解する半
導体ウェーハの表層部分は、例えば低いアルカリ度の洗
浄水に比べて厚くなる。ただし、このアルカリ成分によ
るウェーハの溶解反応は、所定の深さまで達するとそれ
以上はほどんど進行しない。こうして溶解反応が停止
し、ウェーハの研磨面には、アルカリエッチによって浸
食されにくい親水性の表面を有する水酸化膜が形成され
る。その結果、半導体ウェーハの研磨面への研磨布のテ
クスチャの転写を防止することができる。Particularly, according to the invention of claim 3, after polishing,
Instead of the polishing agent, the polishing surface of the semiconductor wafer is cleaned while supplying highly alkaline cleaning water to the polishing cloth. As a result, the surface layer portion of the semiconductor wafer that is dissolved by the alkaline component contained in the polishing agent becomes thicker than, for example, cleaning water having a low alkalinity. However, the dissolution reaction of the wafer due to the alkaline component hardly progresses further when it reaches a predetermined depth. In this way, the dissolution reaction is stopped, and a hydroxide film having a hydrophilic surface that is hardly corroded by alkali etching is formed on the polished surface of the wafer. As a result, it is possible to prevent the texture of the polishing cloth from being transferred to the polishing surface of the semiconductor wafer.
【００１５】[0015]
【発明の実施の形態】以下、この発明の実施例を図面を
参照して説明する。まず、第１の実施例を説明する。図
１（ａ）は、この発明の第１の実施例に係る研磨布テク
スチャの転写防止方法における研磨工程を示す断面図で
ある。図１（ｂ）は、この発明の第１の実施例に係る研
磨布テクスチャの転写防止方法における超純水リンス工
程を示す断面図である。図１（ｃ）は、この発明の第１
の実施例に係る研磨布テクスチャの転写防止方法におけ
る過酸化水素水リンス工程を示す断面図である。図２
（ａ）は、従来手段の研磨布テクスチャの転写防止方法
で得られた半導体ウェーハの平面図である。図２（ｂ）
は、この発明の研磨布テクスチャの転写防止方法で得ら
れた半導体ウェーハの平面図である。BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the drawings. First, the first embodiment will be described. FIG. 1A is a sectional view showing a polishing step in a method of preventing transfer of a polishing cloth texture according to a first embodiment of the present invention. FIG. 1B is a sectional view showing an ultrapure water rinsing step in the method of preventing transfer of the polishing cloth texture according to the first embodiment of the present invention. FIG. 1C shows the first embodiment of the present invention.
FIG. 6 is a cross-sectional view showing a hydrogen peroxide solution rinsing step in the method of preventing transfer of the polishing cloth texture according to the example of FIG. Figure 2
(A) is a plan view of a semiconductor wafer obtained by a conventional method of preventing transfer of a polishing cloth texture. Figure 2 (b)
FIG. 3 is a plan view of a semiconductor wafer obtained by the method of preventing transfer of a polishing cloth texture according to the present invention.
【００１６】ＣＺ法により引き上げられたシリコンイン
ゴットは、スライス工程で、厚さ８６０μｍ程度の８イ
ンチのシリコンウェーハにスライスされる。このスライ
スドウェーハは、続く１次面取り工程で、その外周部に
１次面取り砥石が押し付けられ、所定の形状に粗く面取
りされる。次のラッピング工程では、シリコンウェーハ
を互いに平行なラップ定盤間に配置し、ラップ液を流し
込みながら、シリコンウェーハの表裏両面を機械的にラ
ッピングする。このラップドウェーハの外周部は、仕上
げ面取り砥石により仕上げ面取りされる。次に、フッ酸
と硝酸とを混合した混酸液によって、シリコンウェーハ
がエッチングされる。それから、エッチドウェーハの外
周部がＰＣＲ加工され、このＰＣＲ加工後のシリコンウ
ェーハの表面に１次研磨が施される。The silicon ingot pulled up by the CZ method is sliced into 8-inch silicon wafers having a thickness of about 860 μm in a slicing process. In the subsequent primary chamfering step, the sliced wafer is roughly chamfered into a predetermined shape by pressing a primary chamfering grindstone on the outer peripheral portion thereof. In the next lapping step, the silicon wafers are arranged between parallel lapping plates, and the front and back surfaces of the silicon wafer are mechanically lapped while pouring a lapping liquid. The outer peripheral portion of this wrapped wafer is subjected to finish chamfering with a finish chamfering grindstone. Next, the silicon wafer is etched with a mixed acid solution in which hydrofluoric acid and nitric acid are mixed. Then, the outer peripheral portion of the etched wafer is subjected to PCR processing, and the surface of the silicon wafer after the PCR processing is subjected to primary polishing.
【００１７】１次研磨工程では、図１（ａ）に示すよう
な研磨装置１０が用いられる。研磨装置１０は、上面に
１次研磨用の研磨布１１が展張された研磨定盤１２と、
この研磨定盤１２の上方に対向配置され、下面にシリコ
ンウェーハＷが展張される研磨ヘッド１３とを備えてい
る。１次研磨用の研磨布１１としては、Ｓｕｂａ８００
が使用されている。研磨ヘッド１３の下面には、環状の
テンプレート１４が固着されている。テンプレート１４
の内側には、シリコンウェーハＷの直径より若干大径な
孔部１４ａが形成されている。この孔内に、バックパッ
ド（スエードパッドなど）１５が収納されている。この
バックパッド１５の発泡層（ナップ部）とシリコンウェ
ーハＷの裏面とに純水を供給し、その純水の表面張力に
よってシリコンウェーハＷがハンドリングされる。In the primary polishing step, a polishing apparatus 10 as shown in FIG. 1 (a) is used. The polishing apparatus 10 includes a polishing platen 12 having an upper surface coated with a polishing cloth 11 for primary polishing,
A polishing head 13 is provided above the polishing platen 12 so as to face it, and a polishing head 13 for spreading the silicon wafer W on the lower surface thereof. As the polishing cloth 11 for the primary polishing, Suba800
Is used. An annular template 14 is fixed to the lower surface of the polishing head 13. Template 14
A hole 14a having a diameter slightly larger than the diameter of the silicon wafer W is formed inside. A back pad (such as a suede pad) 15 is housed in this hole. Pure water is supplied to the foamed layer (nap portion) of the back pad 15 and the back surface of the silicon wafer W, and the silicon wafer W is handled by the surface tension of the pure water.
【００１８】研磨時には、スラリーノズル１６を介し
て、０．１重量％の有機アミンの溶液中に研磨砥粒を含
んだ１次研磨用の研磨剤（スラリー）を研磨布１１に供
給しながら、シリコンウェーハＷを研磨布１１の表面
（研磨作用面）に、所定の相対回転速度および所定の研
磨圧で摺接させ、シリコンウェーハＷの表面を粗研磨す
る。このように研磨砥粒を含む研磨剤で研磨する場合に
は、研磨剤中のアルカリ成分と、シリコンウェーハＷの
研磨面に露出したＳｉとが反応し、シリコンウェーハＷ
の表層部分が薄く溶解する。この溶けた表層部分が、研
磨剤中の研磨砥粒と研磨布１１とにより機械的に除去さ
れる。こうして得られたシリコンウェーハＷは、次に研
磨装置１０を利用して、研磨剤に代えた超純水を研磨布
１１上に供給しながら水研磨される（図１（ｂ））。超
純水の供給量は１０リットル／分、リンス時間は３分で
ある。この水研磨により、研磨時に付着した研磨砥粒
が、シリコンウェーハＷおよび研磨布１１から洗い流さ
れる。ただし、研磨剤が研磨砥粒を含まない場合には、
この研磨砥粒を洗浄する必要がないので、図１（ｂ）の
超純水だけを使用した洗浄は省略される。At the time of polishing, while supplying a polishing agent (slurry) for primary polishing containing abrasive grains in a 0.1 wt% organic amine solution to the polishing cloth 11 through the slurry nozzle 16, The silicon wafer W is brought into sliding contact with the surface (polishing surface) of the polishing cloth 11 at a predetermined relative rotation speed and a predetermined polishing pressure to roughly polish the surface of the silicon wafer W. When polishing with a polishing agent containing polishing abrasive grains in this way, the alkaline component in the polishing agent reacts with Si exposed on the polishing surface of the silicon wafer W, and the silicon wafer W
The surface layer of is thinly dissolved. The melted surface layer portion is mechanically removed by the polishing abrasive grains in the polishing agent and the polishing cloth 11. The silicon wafer W thus obtained is then water-polished by using the polishing apparatus 10 while supplying ultrapure water in place of the polishing agent onto the polishing cloth 11 (FIG. 1B). The amount of ultrapure water supplied was 10 liters / minute, and the rinse time was 3 minutes. By this water polishing, the polishing abrasive particles attached during polishing are washed away from the silicon wafer W and the polishing cloth 11. However, if the abrasive does not contain abrasive grains,
Since it is not necessary to clean the polishing abrasive grains, the cleaning using only ultrapure water in FIG. 1B is omitted.
【００１９】次いで、洗浄水を研磨布１１上に供給し
て、研磨布１１およびシリコンウェーハＷを洗浄する
（図１（ｃ））。このときの洗浄水は、低濃度（０．１
５重量％）の過酸化水素水である。洗浄水の供給量は１
０リットル／分、洗浄水の温度は２５℃、リンス時間は
３分である。洗浄水中に含まれる過酸化水素によって、
シリコンウェーハＷの研磨面が酸化される。これによ
り、アルカリエッチでは浸食されにくいＳｉ酸化膜によ
ってシリコンウェーハＷの表面が被覆される。その結
果、この洗浄工程が終了後、シリコンウェーハＷの研磨
面と研磨布１１とが、互いに接触した状態でしばらく放
置されても、このシリコンウェーハＷが耐アルカリ性の
Ｓｉ酸化膜によって被覆されているので、研磨布１１に
残った研磨剤のアルカリ成分によってシリコンウェーハ
Ｗの表層部分が溶けにくい。その結果、シリコンウェー
ハＷの研磨面に対する研磨布１１のテクスチャの転写の
おそれが低減される（図２（ａ），図２（ｂ）参照）。Next, cleaning water is supplied onto the polishing cloth 11 to clean the polishing cloth 11 and the silicon wafer W (FIG. 1 (c)). The wash water at this time has a low concentration (0.1
5% by weight) hydrogen peroxide solution. Wash water supply is 1
0 liter / minute, the temperature of the washing water is 25 ° C., and the rinse time is 3 minutes. By the hydrogen peroxide contained in the wash water,
The polished surface of the silicon wafer W is oxidized. As a result, the surface of the silicon wafer W is covered with the Si oxide film that is not easily eroded by the alkali etching. As a result, even after the polishing surface of the silicon wafer W and the polishing pad 11 are left in contact with each other for a while after the cleaning step, the silicon wafer W is covered with the alkali-resistant Si oxide film. Therefore, the surface layer portion of the silicon wafer W is less likely to melt due to the alkaline component of the polishing agent remaining on the polishing cloth 11. As a result, the risk of transferring the texture of the polishing pad 11 to the polishing surface of the silicon wafer W is reduced (see FIGS. 2A and 2B).
【００２０】しかも、ここでは、従来のように高濃度の
酸性液を研磨布１１上に供給し、この研磨布１１に含浸
されたアルカリ性の研磨剤を中和するという方法をとら
ないので、研磨布１１の表層に含まれた液体のｐＨと、
研磨布１１の内部に含まれた液体のｐＨとの差が従来よ
りも小さい。これにより、研磨布１１の全域において、
研磨布１１に含まれる液体のｐＨが安定する。しかも、
研磨砥粒を有する研磨剤を使った場合、研磨布１１に残
った研磨砥粒が、この高濃度の酸性液の供給によるｐＨ
の急激な変化によって凝集し、シリコンウェーハＷの研
磨面にキズを付けるというおそれも解消される。こうし
て洗浄されたシリコンウェーハＷは、乾燥、検査および
ウェーハケースへの梱包が施され、その後、発注先のデ
バイスメーカへ出荷される。Moreover, here, unlike the conventional method, a method of supplying a high-concentration acidic liquid onto the polishing cloth 11 to neutralize the alkaline polishing agent impregnated in the polishing cloth 11 is not used. The pH of the liquid contained in the surface layer of the cloth 11,
The difference from the pH of the liquid contained in the polishing pad 11 is smaller than before. Thereby, in the entire area of the polishing cloth 11,
The pH of the liquid contained in the polishing cloth 11 becomes stable. Moreover,
When an abrasive having abrasive grains is used, the abrasive grains remaining on the polishing cloth 11 have a pH due to the supply of this highly concentrated acidic liquid.
The abrupt change of agglomerates causes the risk of agglomeration and scratches on the polished surface of the silicon wafer W. The thus cleaned silicon wafer W is dried, inspected, packed in a wafer case, and then shipped to the device manufacturer of the ordering party.
【００２１】次に、図３に基づき、この発明の第２の実
施例に係る研磨布テクスチャの転写防止方法を説明す
る。図３（ａ）は、この発明の第２の実施例に係る研磨
布テクスチャの転写防止方法における研磨工程を示す断
面図である。図３（ｂ）は、この発明の第２の実施例に
係る研磨布テクスチャの転写防止方法における超純水リ
ンス工程を示す断面図である。図３（ｃ）は、この発明
の第２の実施例に係る研磨布テクスチャの転写防止方法
における高アルカリ水リンス工程を示す断面図である。Next, a method of preventing transfer of the polishing cloth texture according to the second embodiment of the present invention will be described with reference to FIG. FIG. 3A is a sectional view showing a polishing step in the method of preventing transfer of the polishing cloth texture according to the second embodiment of the present invention. FIG. 3B is a sectional view showing an ultrapure water rinsing step in the method of preventing transfer of the polishing cloth texture according to the second embodiment of the present invention. FIG. 3C is a sectional view showing a highly alkaline water rinsing step in the method of preventing transfer of the polishing cloth texture according to the second embodiment of the present invention.
【００２２】この第２の実施例の特長は、第１の実施例
の過酸化水素水によるシリコンウェーハＷの洗浄工程
（図１（ｃ））に代えて、高アルカリ度の洗浄水を研磨
布１１に供給しながらシリコンウェーハＷの研磨面を洗
浄する工程（図３（ｃ））を配置した点である。ここで
使用される高アルカリ度の洗浄液とは、研磨剤の場合と
同じ有機アミンを含む超純水である。有機アミンの濃度
は０．１重量％、ｐＨは１１．０、洗浄水の温度は２５
℃である。洗浄液の供給量は１０リットル／分である。
研磨剤に含まれる有機アミンによって溶解するシリコン
ウェーハＷの表層部分は、例えばｐＨ１０．５程度の低
いアルカリ度の洗浄水による洗浄時に比べて厚くなる。
ただし、この有機アミンによるシリコンウェーハＷの溶
解反応は、所定の深さまで達するとそれ以上はほどんど
進行しない。こうして溶解反応が停止し、シリコンウェ
ーハＷの研磨面には、アルカリエッチによって浸食され
にくい親水性の表面を有する水酸化膜（Ｓｉ（ＯＨ）
4 ）が形成される。その結果、シリコンウェーハＷの研
磨面への研磨布１１のテクスチャの転写を防止すること
ができる（図２（ａ），図２（ｂ）参照）。その他の構
成、作用、効果は、第１の実施例と略同じであるので、
説明を省略する。The feature of this second embodiment is that, instead of the step of cleaning the silicon wafer W with the hydrogen peroxide solution of the first embodiment (FIG. 1 (c)), cleaning water of high alkalinity is used as a polishing cloth. This is the point where the step of cleaning the polished surface of the silicon wafer W (FIG. 3C) while supplying 11 is arranged. The high alkalinity cleaning liquid used here is ultrapure water containing the same organic amine as in the case of the abrasive. Concentration of organic amine is 0.1% by weight, pH is 11.0, temperature of washing water is 25
℃. The supply amount of the cleaning liquid is 10 liters / minute.
The surface layer portion of the silicon wafer W, which is dissolved by the organic amine contained in the polishing agent, becomes thicker than when washed with washing water having a low alkalinity of about pH 10.5, for example.
However, the dissolution reaction of the silicon wafer W by the organic amine hardly progresses further when it reaches a predetermined depth. In this way, the dissolution reaction is stopped, and the polishing surface of the silicon wafer W has a hydroxide film (Si (OH) 2) having a hydrophilic surface that is hardly corroded by alkali etching.
4 ) is formed. As a result, the transfer of the texture of the polishing pad 11 to the polishing surface of the silicon wafer W can be prevented (see FIGS. 2A and 2B). Other configurations, operations, and effects are substantially the same as those in the first embodiment,
The description is omitted.
【００２３】[0023]
【発明の効果】この発明によれば、研磨剤に代えて、低
濃度の過酸化水素を含む洗浄水を研磨布上に供給しなが
ら、半導体ウェーハの研磨面を研磨布に押し付けて洗浄
するので、半導体ウェーハの研磨面に耐アルカリ性を有
する酸化膜が形成され、これにより研磨面への研磨布の
テクスチャの転写を防止することができる。しかも、従
来のような研磨布に高濃度の酸性液を加えて研磨布に含
浸された研磨剤を中和させる方法ではないので、研磨布
の全域において、この研磨布に含まれる液体のｐＨが安
定する一方、例えば研磨剤として研磨砥粒を有するもの
を使用した場合、研磨布に残存した研磨砥粒が、従来の
ように酸性液の供給によるｐＨの急激な変化で凝集し、
この半導体ウェーハの研磨面にキズを付けるというおそ
れも解消される。According to the present invention, the polishing surface of a semiconductor wafer is pressed against the polishing cloth for cleaning while supplying cleaning water containing low concentration hydrogen peroxide instead of the polishing agent onto the polishing cloth. An oxide film having alkali resistance is formed on the polishing surface of the semiconductor wafer, which prevents transfer of the texture of the polishing cloth to the polishing surface. Moreover, since it is not the conventional method of neutralizing the polishing agent impregnated in the polishing cloth by adding a high-concentration acidic liquid to the polishing cloth, the pH of the liquid contained in the polishing cloth is kept in the entire area of the polishing cloth. While stable, for example, when using one having abrasive grains as the polishing agent, the polishing grains remaining on the polishing cloth aggregate due to a sharp change in pH due to the supply of an acidic solution as in the conventional case,
The risk of scratches on the polished surface of the semiconductor wafer is also eliminated.
【００２４】特に、請求項３の発明によれば、研磨後、
研磨剤に代えて、高アルカリ度の洗浄水を研磨布に供給
しながら半導体ウェーハの研磨面を洗浄するので、ウェ
ーハの研磨面に水酸化膜が形成され、これにより半導体
ウェーハの研磨面への研磨布のテクスチャの転写を防止
することができる。In particular, according to the invention of claim 3, after polishing,
Instead of the polishing agent, the polishing surface of the semiconductor wafer is washed while supplying a highly alkaline cleaning water to the polishing cloth, so that a hydroxide film is formed on the polishing surface of the wafer, and thus the polishing surface of the semiconductor wafer It is possible to prevent the transfer of the texture of the polishing cloth.
【図１】（ａ）は、この発明の第１の実施例に係る研磨
布テクスチャの転写防止方法における研磨工程を示す断
面図である。（ｂ）は、この発明の第１の実施例に係る
研磨布テクスチャの転写防止方法における超純水リンス
工程を示す断面図である。（ｃ）は、この発明の第１の
実施例に係る研磨布テクスチャの転写防止方法における
過酸化水素水リンス工程を示す断面図である。FIG. 1A is a sectional view showing a polishing step in a method of preventing transfer of a polishing cloth texture according to a first embodiment of the present invention. FIG. 3B is a sectional view showing an ultrapure water rinsing step in the method of preventing transfer of the polishing cloth texture according to the first embodiment of the present invention. FIG. 3C is a sectional view showing a hydrogen peroxide solution rinsing step in the method of preventing transfer of the polishing cloth texture according to the first embodiment of the present invention.
【図２】（ａ）は、従来手段の研磨布テクスチャの転写
防止方法で得られた半導体ウェーハの平面図である。
（ｂ）は、この発明の研磨布テクスチャの転写防止方法
で得られた半導体ウェーハの平面図である。FIG. 2A is a plan view of a semiconductor wafer obtained by a conventional method of preventing transfer of a polishing cloth texture.
FIG. 3B is a plan view of a semiconductor wafer obtained by the method of preventing transfer of the polishing cloth texture of the present invention.
【図３】（ａ）は、この発明の第２の実施例に係る研磨
布テクスチャの転写防止方法における研磨工程を示す断
面図である。（ｂ）は、この発明の第２の実施例に係る
研磨布テクスチャの転写防止方法における超純水リンス
工程を示す断面図である。（ｃ）は、この発明の第２の
実施例に係る研磨布テクスチャの転写防止方法における
高アルカリ水リンス工程を示す断面図である。FIG. 3A is a sectional view showing a polishing step in a method of preventing transfer of a polishing cloth texture according to a second embodiment of the present invention. FIG. 6B is a sectional view showing an ultrapure water rinsing step in the method for preventing transfer of the polishing cloth texture according to the second embodiment of the present invention. (C) is a sectional view showing a highly alkaline water rinsing step in the method of preventing transfer of the polishing cloth texture according to the second embodiment of the present invention.
１１ 研磨布、 Ｗ シリコンウェーハ（半導体ウェーハ）。 11 polishing cloth, W Silicon wafer (semiconductor wafer).
フロントページの続き (72)発明者 伝田 正 東京都千代田区大手町１丁目５番１号 三 菱マテリアルシリコン株式会社内 Ｆターム(参考） 3C047 FF08 FF19 GG20 3C058 AA07 CA01 CB02 DA02 Continued front page (72) Inventor Tadashi Denda 3-5-1 Otemachi, Chiyoda-ku, Tokyo Ryo Material Silicon Co., Ltd. F-term (reference) 3C047 FF08 FF19 GG20 3C058 AA07 CA01 CB02 DA02
Claims (4)
供給しながら、半導体ウェーハの研磨面を研磨布に押し
付けて研磨する工程と、 研磨後、上記研磨剤に代えて、低濃度の過酸化水素を含
む洗浄水を研磨布上に供給しながら、半導体ウェーハの
研磨面を研磨布に押し付けて洗浄する工程とを備えた研
磨布テクスチャの転写防止方法。1. A step of polishing a semiconductor wafer by pressing the polishing surface of the semiconductor wafer against the polishing cloth while supplying the polishing solution containing an alkaline solution to the polishing cloth, and after polishing, replacing the abrasive with a low-concentration peroxide. A method of preventing transfer of a polishing cloth texture, comprising the step of pressing the polishing surface of a semiconductor wafer against the polishing cloth while supplying cleaning water containing hydrogen onto the polishing cloth.
０．０１〜５重量％である請求項１に記載の研磨布テク
スチャの転写防止方法。2. The concentration of hydrogen peroxide in the wash water is
The method for preventing transfer of a polishing cloth texture according to claim 1, wherein the content is 0.01 to 5% by weight.
供給しながら、半導体ウェーハの研磨面を研磨布に押し
付けて研磨する工程と、 研磨後、上記研磨剤に代えて、高アルカリ度の洗浄水を
研磨布上に供給しながら、半導体ウェーハの研磨面を研
磨布に押し付けて洗浄する工程とを備えた研磨布テクス
チャの転写防止方法。3. A step of pressing a polishing surface of a semiconductor wafer against a polishing cloth to polish while supplying an abrasive containing an alkaline solution to the polishing cloth, and after polishing, instead of the above-mentioned polishing agent, cleaning with high alkalinity A method of preventing transfer of a polishing cloth texture, comprising the step of pressing the polishing surface of a semiconductor wafer against the polishing cloth while supplying water onto the polishing cloth to clean the same.
〜ｐＨ１１．５である請求項３に記載の研磨布テクスチ
ャの転写防止方法。4. The alkalinity of the washing water has a pH of 8.5.
The method for preventing transfer of a polishing cloth texture according to claim 3, wherein the method has a pH of 11.5.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001379120A JP2003179020A (en) | 2001-12-12 | 2001-12-12 | Polishing cloth texture transferring prevention method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001379120A JP2003179020A (en) | 2001-12-12 | 2001-12-12 | Polishing cloth texture transferring prevention method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2003179020A true JP2003179020A (en) | 2003-06-27 |
Family
ID=19186625
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001379120A Pending JP2003179020A (en) | 2001-12-12 | 2001-12-12 | Polishing cloth texture transferring prevention method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2003179020A (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006032694A (en) * | 2004-07-16 | 2006-02-02 | Toshiba Corp | Method of manufacturing semiconductor device |
| JP2006135072A (en) * | 2004-11-05 | 2006-05-25 | Fujimi Inc | Polishing method |
| JP2007110066A (en) * | 2005-09-15 | 2007-04-26 | Fujitsu Ltd | Method of manufacturing semiconductor device, polishing device, and polishing system |
| JP2008091383A (en) * | 2006-09-29 | 2008-04-17 | Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 | Method of roughly grinding semiconductor wafer, and apparatus of grinding the semiconductor wafer |
| JP2011249837A (en) * | 2005-09-15 | 2011-12-08 | Fujitsu Semiconductor Ltd | Method of manufacturing semiconductor device, polishing device, and polishing system |
| JP2011258789A (en) * | 2010-06-10 | 2011-12-22 | Lapis Semiconductor Co Ltd | Grinding method and grinder |
| CN103029026A (en) * | 2012-12-13 | 2013-04-10 | 天津中环领先材料技术有限公司 | Monocrystalline silicon wafer cleaning method with ultrahigh cleaning capacity |
| JP2016000444A (en) * | 2014-06-12 | 2016-01-07 | 信越半導体株式会社 | Method of washing polishing pad, and method of polishing wafer |
| JP2016049612A (en) * | 2014-09-01 | 2016-04-11 | 株式会社荏原製作所 | Polishing method, and polishing device |
-
2001
- 2001-12-12 JP JP2001379120A patent/JP2003179020A/en active Pending
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006032694A (en) * | 2004-07-16 | 2006-02-02 | Toshiba Corp | Method of manufacturing semiconductor device |
| US7825028B2 (en) | 2004-07-16 | 2010-11-02 | Kabushiki Kaisha Toshiba | Method of manufacturing semiconductor device |
| JP2006135072A (en) * | 2004-11-05 | 2006-05-25 | Fujimi Inc | Polishing method |
| JP2007110066A (en) * | 2005-09-15 | 2007-04-26 | Fujitsu Ltd | Method of manufacturing semiconductor device, polishing device, and polishing system |
| JP2011249837A (en) * | 2005-09-15 | 2011-12-08 | Fujitsu Semiconductor Ltd | Method of manufacturing semiconductor device, polishing device, and polishing system |
| JP2008091383A (en) * | 2006-09-29 | 2008-04-17 | Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 | Method of roughly grinding semiconductor wafer, and apparatus of grinding the semiconductor wafer |
| JP2011258789A (en) * | 2010-06-10 | 2011-12-22 | Lapis Semiconductor Co Ltd | Grinding method and grinder |
| CN103029026A (en) * | 2012-12-13 | 2013-04-10 | 天津中环领先材料技术有限公司 | Monocrystalline silicon wafer cleaning method with ultrahigh cleaning capacity |
| JP2016000444A (en) * | 2014-06-12 | 2016-01-07 | 信越半導体株式会社 | Method of washing polishing pad, and method of polishing wafer |
| JP2016049612A (en) * | 2014-09-01 | 2016-04-11 | 株式会社荏原製作所 | Polishing method, and polishing device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7402520B2 (en) | Edge removal of silicon-on-insulator transfer wafer | |
| JP3004891B2 (en) | Rough polishing method for semiconductor wafers to reduce surface roughness | |
| KR20000017512A (en) | Method for reclaiming wafer substrate and polishing solution composition for reclaiming wafer substrate | |
| JP6244962B2 (en) | Manufacturing method of semiconductor wafer | |
| JP5557506B2 (en) | Polishing both sides of a semiconductor wafer | |
| KR101139054B1 (en) | Method of the double sided polishing of a semiconductor wafer | |
| WO2013187441A1 (en) | Semiconductor wafer manufacturing method | |
| JPH09270400A (en) | Method of manufacturing semiconductor wafer | |
| JP2002222780A (en) | Surface polishing method of silicon wafer | |
| US6361407B1 (en) | Method of polishing a semiconductor wafer | |
| WO2012002525A1 (en) | Method for polishing silicon wafer | |
| WO2006028017A1 (en) | Method for producing silicon wafer | |
| JP4085356B2 (en) | Cleaning and drying method for semiconductor wafer | |
| KR20020017910A (en) | Method for converting a reclaim wafer into a semiconductor wafer | |
| JP2002231669A (en) | Polishing cloth for semiconductor wafer, and polishing method of semiconductor wafer using the polishing cloth | |
| JP2003179020A (en) | Polishing cloth texture transferring prevention method | |
| JP3668647B2 (en) | Semiconductor wafer substrate regeneration method and semiconductor wafer substrate regeneration polishing liquid | |
| JP2004214398A (en) | Method of manufacturing semiconductor wafer | |
| JP2003142434A (en) | Method of manufacturing mirror-surface wafer | |
| JP4467241B2 (en) | Manufacturing method of semiconductor wafer | |
| JP2005277130A (en) | Method of manufacturing semiconductor device | |
| JP2002025950A (en) | Manufacturing method for semiconductor wafer | |
| JP2004087522A (en) | Process for producing semiconductor wafer | |
| JP2002059356A (en) | Polishing method of semiconductor wafer | |
| JP2002299290A (en) | Manufacturing method for semiconductor wafer |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A625 | Written request for application examination (by other person) |
Free format text: JAPANESE INTERMEDIATE CODE: A625 Effective date: 20041201 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20071017 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20071019 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20071217 |
|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20080212 |