JP2003178436A - Roll-up type sputtering system of film substrate for disk type storage medium, and production method of film substrate for disk type storage medium using the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a roll-up type sputtering system of a film substrate for a disk type storage medium which carries out the low-temperature film deposition of the film substrate and to provide a production method of the film substrate for disk type storage medium using the same. <P>SOLUTION: The roll-up type sputtering system of the film substrate 13 for the disk type storage medium has at least one main roller which is disposed between a carrier shaft 2 and a winding shaft 6 in a vacuum chamber 1 and where the film substrate 13 runs along the surface. Cathode assemblies 9 are arranged opposite to the circumferential surface of each main roller, each main roller is cooled with a refrigerant, thereby the low-temperature film deposition of the film substrate 13 is carried out. The roll-up type sputtering system of the film substrate 13 is used in the production method of the film substrate 13, and each main roller is cooled with the refrigerant, then the low-temperature film deposition of a film having a different material is sequentially carried out on the film substrate. <P>COPYRIGHT: (C)2003,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a film substrate winding type sputtering apparatus for a disk such as a phase change or magneto-optical disk or a phase change or a magnetic recording medium, and a disk type using this apparatus. The present invention relates to a method for manufacturing a film substrate for a storage medium.

[0002]

2. Description of the Related Art Conventional rewritable or phase change optical disks and magneto-optical disks have a thickness of 1.2 mm to 0.6 m.
The substrates of m are sputtered one by one by a single-wafer type sputtering apparatus shown in FIGS. 7 and 8 of the accompanying drawings, or a plurality of substrates are simultaneously sputtered by a batch type sputtering apparatus shown in FIGS. 9 and 10. I've been filming.

The sputtering apparatus shown in FIGS. 7 and 8 is
A plurality of sputtering chambers B are provided surrounding the transfer chamber A. In each sputter chamber B, as shown in an enlarged view in FIG. 8, a substrate holder C and a cathode electrode D are arranged to face each other, a substrate E to be processed is mounted on the substrate holder C, and a mask F is placed thereon. Is installed. On the other hand, the cathode electrode D is connected to the power source G, the magnetic circuit H is mounted on the back side of the cathode electrode D, and the target I is mounted on the front side of the cathode electrode D. In addition, J is an earth shield.

In the conventional apparatus shown in FIG. 9, a circular auto-revolution type sputtering apparatus tray K is used, and a plurality of substrate holders L are provided on the tray K. See also FIG.
In the conventional apparatus shown in FIG. 0, a rectangular passage type sputtering apparatus tray M is used, and a plurality of substrate holders N are provided on the tray M. Further, in the conventional apparatus shown in FIGS. 7 to 10, sputtering is performed by intermittent discharge, and after film formation, it is periodically carried out within a time of several seconds to several minutes. Therefore, the product can be evaluated quickly, and the evaluation result can be fed back to the sputtering device.

[0005]

With the recent increase in the density of disk media, it has been proposed to make the disk substrate thinner due to the problem of coma. However, in the case of a polycarbonate or plastic substrate, which is a substrate, a thin substrate having a thickness of 0.3 mm or less has a small heat capacity of the substrate itself, and thus two to ten layers are stacked, and a structure such as an optical disk or a magnetic disk is sputtered in a short time. When the film is formed, there is a problem that the substrate itself is melted.

[0006] Therefore, it is considered that the winding-type sputtering capable of simultaneously performing film formation and cooling is effective for film formation of a plastic film substrate having a thickness of 0.3 mm or less, but there is no case, and a laminated disk structure is used. In the case of manufacturing, since the winding type sputtering device prepares the substrates in batches for several hundreds of meters for several kilometers, it is necessary to confirm the characteristics after film formation on all substrates, or to control the film thickness monitor etc. during film formation. ing. However, in a laminated structure of thin films such as an optical disk, it is difficult to control the thin films with a film thickness monitor such as a conventional crystal oscillator type. Further, according to the measurement principle such as the crystal oscillator, it is necessary to perform the measurement in the vicinity of the cathode such as sputtering, and the structure is complicated.

Therefore, the present invention is directed to a film type substrate for a disk type storage medium, which is capable of performing low temperature film formation of a film type substrate which cannot be handled by the prior art, and a film type substrate for a disk type storage medium using this apparatus. It is intended to provide a manufacturing method.

[0008]

In order to achieve the above object, a film type film substrate winding type sputtering apparatus for a disk type storage medium according to the first aspect of the present invention comprises a transfer shaft and a winding shaft in a vacuum chamber. It has at least one main roller which is disposed between the shaft and runs along the surface of the film substrate to be treated having a thickness of 0.3 mm or less, and is spaced apart from the peripheral surface of each main roller. It is characterized in that a cathode assembly is provided and each main roller is cooled by a refrigerant to form a film substrate at a low temperature.

In one embodiment of the present invention, each cathode assembly may include a target made of a different material and a deposition shield configured to prevent plasma interference of sputtering to the outside.

Preferably, an optical monitor may be further provided for controlling the film thickness of the deposited film in the deposition area defined by each cathode assembly. In one embodiment of the present invention, each optical monitor may be provided between adjacent cathode assemblies and configured to detect a change in the amount of light reflected from the film substrate to control the film thickness. In this case, the optical sensor provided between the adjacent cathode assemblies may include a probe that is plasma shielded by a deposition preventive plate in the cathode assembly and shielded by a metal cylinder and a tubular mesh.

Alternatively, each optical monitor may be located remotely from the cathode assembly.

According to a second aspect of the present invention, there is provided a method for manufacturing a film substrate for a disk type storage medium, which is arranged between a transfer shaft and a winding shaft in a vacuum chamber and has a thickness of 0. A roll-up type film substrate sputtering apparatus having at least one main roller on which a film substrate to be processed having a size of 3 mm or less to travel and a cathode assembly facing the peripheral surface of each main roller and spaced apart from each other is used. It is characterized in that the main roller is cooled by a refrigerant and films of different materials are sequentially formed at low temperature on the film substrate.

The refrigerant may be temperature controlled, preferably in the range of 15 ° C to -15 ° C.

In the method for manufacturing a film substrate for a disk type storage medium of the present invention, each main roller is cooled by a refrigerant to form films of different materials on the film substrate at a low temperature in sequence, and each film is optically formed. A sensor may be used to detect a change in the amount of reflected light from the film substrate, and the film thickness may be controlled by the difference in the amount of reflected light due to optical interference.

[0015]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to FIGS. In Figure 1,
1 schematically shows an overall configuration of a film-type recording medium roll-up type sputtering apparatus according to an embodiment of the present invention. In FIG. 1, reference numeral 1 denotes a vacuum chamber, which is provided with an exhaust port 1a connected to a vacuum pump (not shown) and a plasma generating gas inlet port 1b. Inside the vacuum chamber 1, a transport shaft 2, a first main roller 3, an intermediate roller 4, a second main roller 5, and a winding shaft 6 are arranged as shown. Refrigerant such as cooling water is circulated in the first main roller 3 and the second main roller 5 as indicated by dotted arrows 7 and 8. The temperature of the refrigerant used can be controlled in the range of 15 ° C to -15 ° C.

Further, three cathode assemblies 9 are provided so as to face the peripheral surfaces of the first main roller 3 and the second main roller 5 at intervals, and the cathode bodies of these cathode assemblies 9 are It is connected to the power supply device 10. In FIG. 1, 11 is an optical monitor, which is connected to a computer 12, respectively. The computer 12 is connected to the power supply device 10 so that the operation of the cathode assembly 9 can be controlled. Again 13
Is a film substrate that is wound around the winding shaft 6 from the transport shaft 2 through the first main roller 3, the intermediate roller 4, and the second main roller 5.

FIG. 2 exemplifies a related structure of the main roller 3 (5), the cathode assembly 9 and the optical monitor 11 in the sputtering apparatus of FIG. The cathode assembly 9 includes a cathode body 14 connected to the power supply 10.
And a magnetic circuit 15 received also on the back side of the cathode body 14, a target 16 mounted on the surface of the cathode body 14, and an earth shield 17 surrounding the target 16 and the cathode. Assembly 9
An anti-adhesion plate 18 that extends toward the surface of the main roller 3 (5) and defines a sputter film formation area is provided around the.

The optical monitor 11 is arranged perpendicular to the surface of the main roller 3 (5) in the gap defined between the deposition shields 18 in the adjacent cathode assemblies 9 and so that the plasma does not interfere. It is completely partitioned by the deposition preventive plate 18.

FIG. 3 is an enlarged view of the structure of the optical monitor 11, in which a probe 21 covered with a mesh member 20 is provided in a metal cylinder 19 oriented perpendicular to the surface of the main roller 3 (5). The probe 21 is arranged and connected to the computer 12. As described above, each optical monitor 11 is installed between the adjacent cathode assemblies 9, and shields the plasma by the adhesion prevention plate in the adjacent cathode assemblies 9 so as to prevent the plasma interference of the sputtering, and the metal cylinder 19 and the mesh. It is shielded by the member 20. Probe 2 of each optical monitor 11
1 is configured so that one or more laser wavelengths can be measured.

A case of forming a constituent film of an optical disk medium on a film substrate by using the illustrated sputtering apparatus having the above structure will be described with reference to FIG. The film substrate 13 having a thickness of 0.3 mm or less to be processed is run from the transport shaft 2 to the winding shaft 6 through the first main roller 3, the intermediate roller 4 and the second main roller 5. The film substrate 13 is pretreated or cleaned as it passes through the first cathode assembly 9 provided opposite the peripheral surface of the first main roller 3 and is sputtered as defined by the second cathode assembly 9. Enter the membrane area. A reflection film 22 is formed in this film formation area, and the film thickness thereof is the second cathode assembly 9 and the third cathode assembly 9.
Is monitored by the first optical monitor 11 located between
The data is sent to the computer 12, and the computer 12 controls the operation of the second cathode assembly 9 so as to obtain the desired film thickness. The film substrate 13 thus formed with the reflective film 22 enters the sputtering film formation area defined by the third cathode assembly 9. A dielectric film 23 is formed in this deposition area, and its thickness is monitored by a second optical monitor 11 located between the third cathode assembly 9 and the intermediate roller 4.

After that, the film substrate 13 passes through the intermediate roller 4 and the fourth cathode assembly 9 provided so as to face the peripheral surface of the second main roller 5. A recording film 24 is formed on the dielectric film 23 of the film substrate 13 when passing through the fourth cathode assembly 9. The film thickness of the recording film 24 is monitored by the third optical monitor 11 located between the fourth cathode assembly 9 and the fifth cathode assembly 9, and is monitored by the computer 12 as described above. The film thickness is controlled. After that, the film substrate 1
3 enters the film formation area defined by the fifth cathode assembly 9, and the dielectric film 25 is formed on the recording film 24. In this case as well, the film thickness of the dielectric film 25 is similarly monitored by the fourth optical monitor 11 in the subsequent stage and controlled to a desired film thickness via the computer 12. After that, the protective film 26 is formed on the dielectric film 25 in the film formation area defined by the final cathode assembly 9, and the film thickness thereof is the fifth optical monitor 11.
The film thickness is monitored by the computer 12 and controlled to a desired film thickness via the computer 12. The film substrate 13 on which the respective films are sequentially formed is wound on the winding shaft 6 to obtain a film substrate having a film structure as shown in FIG.

The film thickness control will be described below with reference to FIGS. In FIG. 5, 27 is a polycarbonate substrate, 28 is ZnS formed by magnetron sputtering.
The —SiO ₂ film, 29 is an Al alloy film formed in the same manner. For a film substrate having such a film structure, a wavelength of 7
The test was performed by injecting the 80 nm laser 30 from the substrate surface.

FIG. 6 shows the measurement result. The horizontal axis is Zn
The film thickness of the S-SiO ₂ film 28 is shown, and the vertical axis shows the amount of reflected light. It can be seen that the amount of reflected light changes depending on the film thickness of the ZnS-SiO ₂ film 28. From this, it is recognized that the film thickness can be detected by the amount of reflected light.

By the way, in the illustrated embodiment, each optical monitor is provided between the adjacent cathode assemblies, but instead, it may be provided at a position apart from the cathode assembly. Further, the numbers of the main roller, the cathode assembly, and the optical monitor can be appropriately set according to the number of layers to be formed. Furthermore, the present invention can be applied to a phase change medium, a magnetic medium, and a magneto-optical disc medium having a laminated structure of a metal film and a dielectric and two or more layers other than the optical disc device.

[0025]

As described above, the first aspect of the present invention
In the film-type film substrate winding type sputtering apparatus according to the present invention, the film substrate should be disposed between the transfer shaft and the winding shaft in the vacuum chamber and have a thickness of 0.3 mm or less along the surface. It has at least one main roller on which the film substrate runs, and a cathode assembly is provided at an interval facing the peripheral surface of each main roller, and each main roller is cooled by a refrigerant to form a film at a low temperature. With this configuration, it is possible to form a thin film substrate for a disk-type storage medium having a small heat capacity of 0.3 mm or less by winding-type sputtering without melting the substrate itself.

Further, an optical monitor for controlling the film thickness of the film formed in the film formation area defined by each cathode assembly is provided, and the film thickness is controlled by detecting the change in the amount of light reflected from the film substrate. Optical recording, if configured to
Like magneto-optical recording, it is composed of a thin metal and a transparent dielectric film, which makes it possible to control the film thickness of the medium that uses optical interference. Also, unlike a control method that uses a spectroscope, it is easy to use a laser with one or more wavelengths. The film thickness can be controlled.

Further, in the method for manufacturing a film substrate for a disk type storage medium according to the second aspect of the present invention, the film substrate is arranged in the vacuum chamber between the transport shaft and the winding shaft and has a thickness of 0. A roll-up type film substrate sputtering apparatus having at least one main roller on which a film substrate to be processed having a size of 3 mm or less to travel and a cathode assembly facing the peripheral surface of each main roller and spaced apart from each other is used. The heat capacity of the substrate itself is small by 0.3 mm because the main roller is cooled by the refrigerant and the films of different materials are sequentially formed at low temperature on the film substrate.
The following film substrate for disk type storage medium can be formed into a film by winding type sputtering.

Further, since the temperature of the cooling medium can be controlled in the range of 15 ° C. to −15 ° C., film substrates of various materials can be formed by the winding type sputtering.

Further, when the change of the reflected light amount from the film substrate is detected by using an optical monitor at the time of forming each film and the film thickness is controlled by the difference of the reflected light amount due to the optical interference, the optical interference It is possible to easily control the film thickness of the medium using the.

[Brief description of drawings]

FIG. 1 is a schematic diagram showing an overall configuration of a winding type sputtering apparatus for a film substrate for a disk type storage medium according to an embodiment of the present invention.

FIG. 2 is an enlarged schematic partial view showing a related configuration of a main roller, a cathode assembly and an optical monitor in the sputtering apparatus of FIG.

3 is a schematic enlarged view showing a configuration of an optical monitor in the sputtering apparatus of FIG.

FIG. 4 is a schematic enlarged side view showing constituent films of an optical disc medium formed on a film substrate by using the sputtering apparatus of FIG.

FIG. 5 is a schematic enlarged side view showing a film configuration of a film substrate used for a film thickness control experiment.

6 is a graph showing the relationship between the film thickness measured on the film substrate of FIG. 5 and the amount of reflected light.

FIG. 7 is a schematic diagram showing a conventional single-wafer sputtering apparatus.

8 is a schematic enlarged diagram showing the structure of a sputtering chamber in the sputtering apparatus of FIG.

FIG. 9 is a schematic diagram showing a circular auto-revolution sputtering apparatus tray in a conventional apparatus.

FIG. 10 is a schematic diagram showing a rectangular pass-through sputtering device tray in a conventional device.

[Explanation of symbols]

1: Vacuum chamber 1a: exhaust port 1b: Inlet for gas for plasma generation 2: Transport axis 3: First main roller 4: Intermediate roller 5: Second main roller 6: Winding shaft 7: Dotted arrow indicating circulation of refrigerant 8: Dotted arrow indicating circulation of refrigerant 9: Cathode assembly 10: Power supply device 11: Optical monitor 12: Computer 13: Film substrate 14: cathode body 15: Magnetic circuit 16: Target 17: Earth shield 18: Protective plate 19: Metal cylinder 20: Mesh member 21: Probe

Continued front page    (72) Inventor Noriaki Tani             523 Yokota, Sanmu-cho, Sanmu-gun, Chiba Prefecture             Lubac Chiba Institute for Materials Research (72) Inventor Ken Momono             523 Yokota, Sanmu-cho, Sanmu-gun, Chiba Prefecture             Lubac Chiba Institute for Materials Research (72) Inventor Hiroaki Kawamura             523 Yokota, Sanmu-cho, Sanmu-gun, Chiba Prefecture             Lubac Chiba Institute for Materials Research (72) Inventor Akira Ishibashi             523 Yokota, Sanmu-cho, Sanmu-gun, Chiba Prefecture             Lubac Chiba Institute for Materials Research F-term (reference) 4K029 AA11 AA25 BA23 BA46 BA51                       BB02 BD11 BD12 CA05 DA10                       EA01 EA08 JA10 KA01                 5D112 AA02 AA22 BA01 FA04 FB21                       FB24 FB25

Claims (9)

[Claims] 1. At least one main roller, which is disposed between a transfer shaft and a winding shaft in a vacuum chamber and runs along a surface of a film substrate to be processed having a thickness of 0.3 mm or less, For a disk type storage medium, characterized in that a cathode assembly is provided facing each other around the peripheral surface of each main roller, and each main roller is cooled by a refrigerant to form a film substrate at a low temperature. Film substrate winding type sputtering device. 2. The disk type memory according to claim 1, wherein each cathode assembly is provided with a target made of a different material and a deposition preventive plate configured to prevent plasma interference of sputtering to the outside. Winding type sputtering device for film substrate for media. 3. A vacuum chamber, comprising at least one main roller, which is arranged between a transport shaft and a winding shaft and runs along a surface of a film substrate to be processed having a thickness of 0.3 mm or less. A cathode assembly is provided so as to face the peripheral surface of each main roller at intervals, and each main roller is cooled by a refrigerant to form a film substrate at a low temperature, and is further defined by each cathode assembly. A roll-up type sputtering apparatus for a film substrate for a disk-type storage medium, comprising an optical monitor for controlling the film thickness of the film formed in the formed film formation area. 4. The optical monitor is provided between adjacent cathode assemblies, and is configured to detect a change in the amount of light reflected from the film substrate to control the film thickness. The film-type sputtering device for a disk-type storage medium according to item 3, which is a roll-up type sputtering device. 5. An optical sensor provided between adjacent cathode assemblies includes a probe shielded by a deposition preventive plate in the cathode assembly and shielded by a metal cylinder and a tubular mesh. Claim 3
The film-type sputtering device for a film substrate for a disk-type storage medium according to 1. 6. The roll-up type sputtering apparatus for a film substrate for a disk type storage medium according to claim 3, wherein each optical monitor is provided at a position apart from the cathode assembly. 7. A main roller, which is disposed between a transport shaft and a winding shaft in a vacuum chamber and runs along a surface of a film substrate to be processed having a thickness of 0.3 mm or less, and each main roller. Using a film substrate roll-up type sputtering device having a cathode assembly facing the peripheral surface of the roller and spaced apart from each other, each main roller is cooled by a cooling medium to sequentially form low temperature films of different materials on the film substrate. A method of manufacturing a film substrate for a disk-type storage medium, which comprises forming a film. 8. The method of manufacturing a film substrate for a disk type storage medium according to claim 5, wherein the temperature of the cooling medium is controlled in the range of 15 ° C. to −15 ° C. 9. A main roller, which is disposed between a transfer shaft and a winding shaft in a vacuum chamber and runs along a surface of a film substrate to be processed having a thickness of 0.3 mm or less, and each main roller. Using a film substrate roll-up type sputtering device having a cathode assembly facing the peripheral surface of the roller and spaced apart from each other, each main roller is cooled by a cooling medium to sequentially form low temperature films of different materials on the film substrate. A film for a disk-type storage medium, which is characterized by detecting a change in the amount of light reflected from the film substrate by using an optical monitor when forming each film and controlling the film thickness by the difference in the amount of light reflected by optical interference. Substrate manufacturing method.